CN103466950B - A kind of high heat conductance crystallite glass substrate material - Google Patents
A kind of high heat conductance crystallite glass substrate material Download PDFInfo
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- CN103466950B CN103466950B CN201210230179.0A CN201210230179A CN103466950B CN 103466950 B CN103466950 B CN 103466950B CN 201210230179 A CN201210230179 A CN 201210230179A CN 103466950 B CN103466950 B CN 103466950B
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- glass substrate
- high heat
- heat conductance
- crystallite glass
- substrate material
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Abstract
The present invention relates to a kind of high heat conductance crystallite glass substrate material, it by with the silicate glass of the components such as boron silicon-dioxide, boron trioxide, zinc oxide, sodium oxide for main raw forms, process with addition of components such as industrial aluminium nitride, aluminium sesquioxides.This high heat conductance crystallite glass substrate formulation weight percentage composition is: silicon-dioxide: 60-70%, aluminium nitride: 20-30%, boron trioxide: 5-10%, zinc oxide 1-4%, aluminium sesquioxide: 1-4%, sodium oxide: 1.5-3%.Through preparation, melting, shrend, prepare again, namely shaping, crystallization process can be made into high heat conductance crystallite glass substrate, print thick-film resistor circuit on the substrate and namely can be made into direct heating heater.
Description
Art
The present invention relates to a kind of glass plastics on new materials, particularly relate to the controlled electric heating of thick film circuit (resistance) element high heat conductance crystallite glass substrate material.
Background technology
At present, all kinds of an electric heating element has PTC Heating element, heating alloy, quartz heating tube, the utensil of these conventional heating element assembling is because of the defect of well heater itself, market and application are restricted gradually, as European Union carried out in an all-round way ROHS Environmental Protection Plan from 2006, forbid buying PTC heating unit.And now on inorganic material substrate directly the well heater of printing thick-film circuit resistor paste large with its vertical heat transfer, Heating temperature uniform, controllable, fast response time, power, without magnetic leakage, green, environmental protection, energy-conservation, safe and reliable and receive market concern, but there is various defect in the substrate that they use now, as aluminium nitride ceramics material substrate, one is that its thermal conductivity is low, general at about 13-15W/mk, the heat energy that resistance slurry produces can not be conducted rapidly to heated object.Two is that its thermal shock resistance is poor, because its thermal expansivity is 7.5 × 10
-6/ DEG C about, aluminum nitride ceramic substrate material through several times circulation will damage, although and aluminium nitride and niberlox thermal conductivity high, its cost is also high, there is certain environmental issue simultaneously and can not widely use in daily life.
Summary of the invention
In order to overcome the defect that existing thick film circuit heating unit loading material thermal conductivity is low, thermal shock resistance is poor, the invention provides a kind of high heat conductance crystallite glass substrate material, this crystallite glass substrate material has that thermal conductivity is high, thermal expansivity is little, thermal-shock resistance is good, price is low, is more conducive to making thick film circuit heater substrate.
The technical scheme that the present invention solves its technical problem is: with the silicate glass of the components such as boron silicon-dioxide, boron trioxide, zinc oxide, sodium oxide for main raw forms, and processes with addition of components such as industrial aluminium nitride, aluminium sesquioxides.
This high heat conductance crystallite glass substrate formulation weight percentage composition is:
Silicon-dioxide: 60-70%, aluminium nitride: 20-30%, boron trioxide: 5-10%, zinc oxide 1-4%, aluminium sesquioxide: 1-4%, sodium oxide: 1.5-3%.
The making step of this high heat conductance crystallite glass substrate material is as follows:
1, first the raw materials such as silicon-dioxide, boron trioxide, zinc oxide, aluminium sesquioxide, sodium oxide are mixed loading crucible.
2, crucible is sent in kiln, melting at 1600-1700 DEG C of temperature.
3, take out crucible, melten glass is wherein poured into rapidly in cold water and carries out Water Quenching.
4, add ultra-fine aluminum nitride powder in the glass frit after Water Quenching and carry out ball milling, granulation.
5, dry-pressing formed.
6, crystallization process.
Crystallite glass substrate after crystallization process can for the manufacture of the substrate of thick film circuit well heater after cold working.
Adding aluminium sesquioxide is nucleator, and adding aluminium nitride is the thermal conductivity increasing this baseplate material.
The invention has the beneficial effects as follows, owing to adding aluminium nitride in devitrified glass, this devitrified glass thermal expansivity itself is low, intensity is high, also substantially increases the thermal conductivity of this material simultaneously, thus makes this crystallite glass substrate thermal-shock resistance better, intensity is higher, and thermal conductivity is high.
Embodiment
First raw material is taken by following raw material weight percentage composition, that is: silicon-dioxide: 65%, aluminium nitride: 23%, boron trioxide: 6%, zinc oxide: 1.5%, aluminium sesquioxide: 3%, sodium oxide: 1.5%.
After batching, technical process is as follows:
1, first the raw materials such as silicon-dioxide, boron trioxide, zinc oxide, aluminium sesquioxide, sodium oxide are mixed loading crucible.
2, crucible is sent in kiln, melting at 1600-1700 DEG C of temperature.
3, take out crucible, melten glass is wherein taken out to pour into rapidly in cold water and carries out Water Quenching.
4, add ultra-fine aluminum nitride powder in the glass frit after Water Quenching and carry out ball milling, granulation.
5, dry-pressing formed.
6, crystallization process.
Crystallite glass substrate after crystallization process can for the manufacture of the substrate of thick film circuit well heater after cold working.
The salient features of the baseplate material of the high heat conductance devitrified glass after processing treatment is: density: 3.1g/cm
3, thermal expansivity (0-1200 DEG C): 4.5 × 10
-7/ DEG C, thermal conductivity: 50-60w/m.k, volume resistance: 4 × 10
-11Ω cm.
Claims (1)
1. a high heat conductance crystallite glass substrate material, is characterized in that:
This high heat conductance crystallite glass substrate formulation weight percentage composition is: silicon-dioxide: 60-70%, aluminium nitride: 20-30%, boron trioxide: 5-10%, zinc oxide 1-4%, aluminium sesquioxide: 1-4%, sodium oxide: 1.5-3%;
The making step of this high heat conductance crystallite glass substrate material is as follows:
1) first silicon-dioxide, boron trioxide, zinc oxide, aluminium sesquioxide, sodium oxide raw material are mixed loading crucible;
2) crucible is sent in kiln, melting at 1600-1700 DEG C of temperature;
3) take out crucible, melten glass is wherein poured into rapidly in cold water and carries out Water Quenching;
4) add ultra-fine aluminum nitride powder in the glass frit after Water Quenching and carry out ball milling, granulation;
5) dry-pressing formed;
6) crystallization process;
Crystallite glass substrate after crystallization process is the baseplate material for the manufacture of thick film circuit well heater after cold working;
The salient features of the high heat conductance crystallite glass substrate material after above-mentioned processing treatment is: density: 3.lg/cm
3, thermal expansivity (0-1200 DEG C): 4.5 × 10
-7/ DEG C, thermal conductivity: 50-60w/m.k, volume resistance: 4 × 10
-11Ω .cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210230179.0A CN103466950B (en) | 2012-06-30 | 2012-06-30 | A kind of high heat conductance crystallite glass substrate material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210230179.0A CN103466950B (en) | 2012-06-30 | 2012-06-30 | A kind of high heat conductance crystallite glass substrate material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103466950A CN103466950A (en) | 2013-12-25 |
| CN103466950B true CN103466950B (en) | 2016-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210230179.0A Active CN103466950B (en) | 2012-06-30 | 2012-06-30 | A kind of high heat conductance crystallite glass substrate material |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109130362A (en) * | 2018-09-12 | 2019-01-04 | 张家港市沐和新材料技术开发有限公司 | A kind of high strength micro-crystalline glass-metallic composite |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101100367A (en) * | 2007-07-06 | 2008-01-09 | 清华大学 | Aluminum nitride/borosilicate glass low-temperature co-fired ceramic substrate material and preparation method thereof |
| CN101161605A (en) * | 2006-10-09 | 2008-04-16 | 九豪精密陶瓷股份有限公司 | Low-temperature sintered ceramic material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6630417B2 (en) * | 2000-05-30 | 2003-10-07 | Kyocera Corporation | Porcelain composition, porcelain and method of producing the same, and wiring board and method of producing the same |
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2012
- 2012-06-30 CN CN201210230179.0A patent/CN103466950B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101161605A (en) * | 2006-10-09 | 2008-04-16 | 九豪精密陶瓷股份有限公司 | Low-temperature sintered ceramic material |
| CN101100367A (en) * | 2007-07-06 | 2008-01-09 | 清华大学 | Aluminum nitride/borosilicate glass low-temperature co-fired ceramic substrate material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 组成对AlN/MAS微晶玻璃材料热导率的影响;李宏等;《武汉理工大学学报》;武汉理工大学学报;20101130;第32卷(第22期);第25-27、35页 * |
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Effective date of registration: 20190327 Address after: 417600 Peimaling Community, Shangmei Town, Xinhua County, Loudi City, Hunan Province Patentee after: Xinhua Zheng Ning Fine Ceramics Co., Ltd. Address before: 417600 Yuanzhuling, Shangmei Town, Xinhua County, Hunan Province Patentee before: Xinhua Weixin Electronic Co., Ltd. |