CN103456859A - 倒装led芯片的反射层结构及倒装led芯片 - Google Patents
倒装led芯片的反射层结构及倒装led芯片 Download PDFInfo
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109524514A (zh) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | 一种带有Ag反射层结构的倒装LED芯片及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286445A (ja) * | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US20070138487A1 (en) * | 2005-12-01 | 2007-06-21 | Yoshiake Watanabe | Semiconductor light emitting device and method of manufacturing the same |
CN102439741A (zh) * | 2009-11-06 | 2012-05-02 | 旭明光电股份有限公司 | 发光二极管装置 |
CN102723415A (zh) * | 2012-06-25 | 2012-10-10 | 钟伟荣 | 一种倒装型高压交/直流发光二极管及其制作方法 |
CN203521456U (zh) * | 2013-09-05 | 2014-04-02 | 深圳市智讯达光电科技有限公司 | 倒装led芯片的反射层结构及倒装led芯片 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286445A (ja) * | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US20070138487A1 (en) * | 2005-12-01 | 2007-06-21 | Yoshiake Watanabe | Semiconductor light emitting device and method of manufacturing the same |
CN102439741A (zh) * | 2009-11-06 | 2012-05-02 | 旭明光电股份有限公司 | 发光二极管装置 |
CN102723415A (zh) * | 2012-06-25 | 2012-10-10 | 钟伟荣 | 一种倒装型高压交/直流发光二极管及其制作方法 |
CN203521456U (zh) * | 2013-09-05 | 2014-04-02 | 深圳市智讯达光电科技有限公司 | 倒装led芯片的反射层结构及倒装led芯片 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109524514A (zh) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | 一种带有Ag反射层结构的倒装LED芯片及其制作方法 |
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Application publication date: 20131218 |