CN103441181A - InSb/GaSb quantum dot structure apparatus and growing method - Google Patents
InSb/GaSb quantum dot structure apparatus and growing method Download PDFInfo
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Abstract
The invention discloses an InSb/GaSb quantum dot structure apparatus. The InSb/GaSb quantum dot structure apparatus comprises a GaSb substrate (101) which is used for supporting a whole two-point material structure. An extension structure which grows on the GaSb substrate sequentially comprises a GaSb lower buffer layer (102), a lattice-matched AlGaInAsSb lower barrier layer (103), a GaSb upper buffer layer (104), an InSb quantum dot layer (105), a GaSb protective layer (106), a lattice-matched AlGaInAsSb upper barrier layer (107), and a GaSb covering layer (108). The invention further discloses an MBE growing method of the quantum dot structure apparatus. According to the InSb/GaSb quantum dot structure apparatus and the growing method, InSb quantum dots can be prepared on the GaSb substrate, and the InSb/GaSb quantum dot structure apparatus and the growing method are applied to the design and the extension growing of an active region structure of a semiconductor photoelectric device which emits single photons in a mid-infrared wave section.
Description
Technical field
The present invention relates to the optical semiconductor electro-technical field, relate in particular to a kind of InSb/GaSb quantum dot material structure device and growing method thereof.
Background technology
2～5 mu m wavebands are extremely important atmospheric transmission windows, at this wave band, are expected to realize the free space communication; There are strong absworption peak in asymmetric double atom and polyatomic molecule gas under 2～5 mu m wavebands simultaneously, especially a large amount of pollution gas molecule (NH
3(2.1 μ m), HF (2.5 μ m), CH
4(2.35 μ m and 3.3 μ m), HCHO (3.5 μ m), HCl (3.5 μ m), CO (2.3 μ m)), thereby excitation wavelength has important purposes in the GaSb of this wave band base mid and far infrared laser device in communication and gas molecule spectrum direction.At this wave band, the emission of the light of antimonide has shown huge advantage with sensitive detection parts; Yet the current technology of light emitting devices of 3～4 μ m room temperature continuous-wave lasings is still not overripened.The InSb quanta point material is the potential feasibility material of this wave band; It has the electronic structure of low-dimensional nano structure material uniqueness simultaneously, and than quantum-well laser, InSb quantum dot light ballistic device possesses higher gain, lower threshold current, higher a series of advantages such as quantum effect.
For InAs/GaSb quantum dot system, concern and research and comparison that the InSb quantum dot obtains are few, and most of research group more focuses on research and adopts MBE or MOVCD method at GaAs, InP, InAs Grown InSb quantum dot.InSb quantum dot by traditional SK growing method growth can only produce the luminescence generated by light phenomenon at low temperatures, within 2006, the loffe laboratory proposes by the Sb source the GaSb surface modification, the method of the large line growth of low temperature InSb quantum dot, realized the growth of even high density InSb quantum dot, by adopting AlGaAsSb as barrier material, realized the luminescence generated by light under the room temperature of InSb quantum dot.
The present invention proposes a kind of InAs/GaSb quantum-dot structure device and growing method, by the Sb source to the GaSb surface modification, low temperature tuftlet stream growth InSb quantum dot, and adopt the structural design of five yuan of materials of AlGaInAsSb as barrier material, contribute to the InSb/GaSb quantum dot to be applied to design and the epitaxial growth of the semiconductor photoelectric device active area structure of middle-infrared band.
Summary of the invention
The object of the invention is to propose a kind of InAs/GaSb Quantum Dots Growth method, by the Sb source, to the GaSb surface modification, low temperature tuftlet stream growth InSb quantum dot, realize growing high density on GaSb, uniformly the InSb quantum dot.
Another object of the present invention is to propose a kind of InAs/GaSb quantum-dot structure device, adopt the structural design of five yuan of materials of AlGaInAsSb as barrier material, contribute to the InSb/GaSb quantum dot to be applied to design and the epitaxial growth of the semiconductor photoelectric device active area structure of middle-infrared band.
To achieve these goals, the present invention adopts following technical scheme:
The invention provides a kind of InAs/GaSb quantum-dot structure device, described quantum-dot structure device comprises:
N-shaped GaSb substrate 101: adopt the GaSb substrate of (001) crystal orientation N-shaped doping, doping content is: 5 * 10
17/ cm
3;
GaSb bottom breaker 102: at Grown N-shaped GaSb material, thickness is 300nm, for the upwards growth of defect that stops substrate, improves the crystal mass of extension.
River GaInAsSb lower barrierlayer 103: this barrier layer be grown on resilient coating is grown on the GaSb resilient coating, AlGaInAsSb lower barrierlayer and GaSb substrate lattice coupling;
The upper resilient coating 104 of GaSb: be grown in the bottom breaker on lower barrierlayer, thickness is 200nm, adopts the GaSb material;
InSb quantum dot layer 105: active area is grown on bottom breaker, and the deposition thickness of every layer of InSb quantum dot is 1～2.6ML;
The upper protective layer 106 of GaSb: be grown in the upper protective layer of InSb quantum layer, thickness is 200nm, adopts the GaSb material, in order to protect the quantum dot pattern;
The upper barrier layer 107 of AlGaInAsSb: this barrier layer be grown on resilient coating is grown on the GaSb resilient coating, AlGaInAsSb lower barrierlayer and GaSb substrate lattice coupling;
GaSb cap rock 108, this cap rock is grown in above the upper barrier layer of AlGaInAsSb, for integrally-built protective effect.
In order to reach above purpose, the present invention also provides a kind of molecular beam epitaxy accretion method of InSb quantum dot, comprises the following steps:
Step 201: at N-shaped GaSb Grown GaSb resilient coating, stop the upwards growth of defect in substrate, improve the crystal mass of extension, thickness is 300nm, deposition temperature is 550 ℃, deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources (ratio of five or three in molecular beam epitaxial growth) is 8～10;
Step 202: at the barrier layer of five yuan of materials of GaSb Grown AlGaInAsSb, the thickness of five yuan of material barrier materials of low Al component AlGaInAsSb of non-doping is 100nm, 400 ℃ of growth temperatures, deposition rate 1 atomic layer/second, the flow-rate ratio of five family's three clan sources is 15～20;
Step 203: growth GaSb resilient coating on five yuan of barrier materials, thickness is 100nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10;
Step 204: reduce growth temperature, at GaSb padded surface deposit Sb, antimony presses 1.56 * 10
-8torr, deposition temperature is 320～350 ℃, deposition time 60s realizes the surface modification of GaSb bottom breaker;
Step 205: deposit InSb quantum dot on the GaSb resilient coating, the deposition thickness of every layer of InSb quantum dot is 1～2.6ML, deposition rate 0.01～0.02ML/s, 300 ℃ of deposition temperatures;
Step 206: rising underlayer temperature to 350 ℃, deposit InSb quantum dot is carried out to annealing in process, make surface modifier Sb desorption.
Step 207: growth GaSb layer on the InSb quantum dot, thickness is 100nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10, and quantum dot is protected;
Step 208: the barrier layer of five yuan of materials of growth AlGaInAsSb on the GaSb layer, the thickness of five yuan of material barrier materials of low Al component AlGaInAsSb of non-doping is 100nm, 400 ℃ of growth temperatures, deposition rate 1 atomic layer/second, the flow-rate ratio of five family's three clan sources is 15～20;
Step 209: growth GaSb cap rock, thickness is 20nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10, and quantum dot is protected; Complete the growth of whole InSb/GaSb quantum-dot structure device.
The accompanying drawing explanation
The epitaxial structure device schematic diagram that Fig. 1 is the InSb/GaSb quantum dot;
Fig. 2 is the flow chart according to the growing method of InSb quantum-dot structure device of the present invention;
The afm image that Fig. 3 is the InSb/GaSb quantum point sample crystalline substance that obtains of one embodiment of the present of invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and, with reference to accompanying drawing, the present invention is described in further detail.
Core concept of the present invention is: to the GaSb surface modification, reduce the diffusion length of In atom at rich Sb material surface by the Sb source, thereby low temperature tuftlet stream growth InSb quantum dot is realized growing high density, uniform InSb quantum dot on GaSb; Adopt the structural design of five yuan of materials of AlGaInAsSb as InSb quantum dot barrier material, contribute to the InSb/GaSb quantum dot to be applied to design and the epitaxial growth of the semiconductor photoelectric device active area structure of middle-infrared band.
(1) InSb/GaSb quantum dot material structure device as shown in Figure 1.
N-shaped substrate 101: adopt the GaSb substrate of (001) crystal orientation N-shaped doping, doping content is 10
17/ cm
3;
Bottom breaker 102: at Grown N-shaped GaSb material, thickness is 300nm, for the upwards growth of defect that stops substrate, improves the crystal mass of extension.
Lower barrierlayer 103: this barrier layer be grown on resilient coating is grown on the GaSb resilient coating, AlGaInAsSb lower barrierlayer and GaSb substrate lattice coupling;
Upper resilient coating 104: be grown in the bottom breaker on lower barrierlayer, thickness is 200nm, adopts the GaSb material;
InSb quantum dot layer 105: active area is grown on bottom breaker, and the deposition thickness of every layer of InSb quantum dot is 1～2.6ML;
Upper protective layer 106: be grown in the upper protective layer of InSb quantum layer, thickness is 200nm, adopts the GaSb material, in order to protect the quantum dot pattern;
Upper barrier layer 107: this barrier layer be grown on resilient coating is grown on the GaSb resilient coating, AlGaInAsSb lower barrierlayer and GaSb substrate lattice coupling;
GaSb cap rock 108, this cap rock is grown in above the upper barrier layer of AlGaInAsSb, for integrally-built protective effect.
(2) the present invention takes following steps in epitaxial process, flow process as shown in Figure 2:
Step 201: by the molecular beam epitaxial method GaSb resilient coating of growing, stop the upwards growth of defect in substrate on N-shaped GaSb substrate, improve the crystal mass of extension, thickness is 300nm, deposition temperature is 550 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10;
Step 202: on the GaSb resilient coating by the grow barrier layer of five yuan of materials of AlGaInAsSb of molecular beam epitaxial method, the thickness of five yuan of material barrier materials of low Al component AlGaInAsSb of non-doping is 100nm, 400 ℃ of growth temperatures, deposition rate 1 atomic layer/second, the flow-rate ratio of five family's three clan sources is 15～20;
Step 203: on five yuan of barrier materials, by the molecular beam epitaxial method GaSb resilient coating of growing, thickness is 100nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10;
Step 204: reduce growth temperature, at GaSb padded surface deposit Sb, antimony presses 1.56 * 10
-8torr, deposition temperature is 320～350 ℃, deposition time 60s realizes the surface modification of GaSb bottom breaker;
Step 205: deposit InSb quantum dot on surface modification GaSb resilient coating, the deposition thickness of every layer of InSb quantum dot is 1～2.6ML, deposition rate 0.01～0.02ML/s, 300 ℃ of deposition temperatures;
Step 206: rising underlayer temperature to 350 ℃, deposit InSb quantum dot is carried out to annealing in process, make surface modifier Sb desorption.
Step 207: on the InSb quantum dot, by the molecular beam epitaxial method GaSb layer of growing, thickness is 100nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10, and quantum dot is protected;
Step 208: on the GaSb layer by the grow barrier layer of five yuan of materials of AlGaInAsSb of molecular beam epitaxial method, the thickness of five yuan of material barrier materials of low Al component AlGaInAsSb of non-doping is 100nm, 400 ℃ of growth temperatures, deposition rate 1 atomic layer/second, the flow-rate ratio of five family's three clan sources is 15～20;
Step 209: by the molecular beam epitaxial method GaSb cap rock of growing, thickness is: 20nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10, and quantum dot is protected; Complete the growth of whole InSb/GaSb quantum-dot structure device.
Based on above-mentioned Fig. 1,2 described InSb/GaSb quantum dot material structure devices, growing method, below in conjunction with concrete case study on implementation, quantum dot material structure device growth method provided by the invention is described in further detail.
Embodiment:
On the GaSb substrate of (001) crystal orientation N-shaped doping, temperature is 550 ℃, by the molecular beam epitaxial method GaSb bottom breaker of growing.Then underlayer temperature is reduced to 400 ℃, five yuan of material lower barrierlayers of low Al component AlGaInAsSb of the non-doping of growing, for example Al commonly used
0.3ga
0.4in
0.3five yuan of material lower barrierlayers of AsSb, afterwards thereon by the molecular beam epitaxial method upper resilient coating of GaSb of growing.Underlayer temperature is down to 330 ℃, and one deck Sb that condenses on GaSb, for material surface modifying, then is reduced to 300 ℃ to underlayer temperature, deposit 2.5MLInSb quantum dot layer, and rising underlayer temperature to 400 ℃ carries out the thermal annealing of 1 minute to the InSb quantum dot.Barrier layer on five yuan of materials of low Al component AlGaInAsSb of the GaSb quantum dot protective layer of deposit 100nm, then deposit 100nm subsequently, the GaSb cap rock of last deposit 20nm is protected whole InSb quantum-dot structure device.Above-mentioned material is all from known commercially available material.The afm image of the InSb quantum dot in the sample crystalline substance as shown in Figure 3.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an InSb/GaSb quantum-dot structure device, is characterized in that, comprising:
GaSb substrate (100);
The GaSb resilient coating, this buffer growth is on GaSb substrate (100);
The AlGaInAsSb lower barrierlayer, this barrier layer is grown on the GaSb resilient coating, AlGaInAsSb lower barrierlayer and GaSb substrate lattice coupling;
The InSb quantum dot layer, the InSb quantum dot layer is grown on the AlGaInAsSb lower barrierlayer;
The upper barrier layer of AlGaInAsSb, this barrier layer is grown on the InSb quantum dot layer, the upper barrier layer of AlGaInAsSb and GaSb substrate lattice coupling;
The GaSb cap rock, this cap rock is grown in above the upper barrier layer of AlGaInAsSb, for integrally-built protective effect, obtains the InSb quanta point material.
2. InSb/GaSb quantum-dot structure device according to claim 1, is characterized by and form the InSb quantum dot on the GaSb substrate, and the diameter of InSb quantum dot is between 80～100nm.
3. InSb/GaSb quantum-dot structure device according to claim 1, it is characterized in that, adopt the barrier material of five yuan of materials of low Al component AlGaInAsSb of non-doping as the InSb quantum dot, under mating with the GaSb substrate lattice, these five yuan of materials can provide certain valence band restriction for the InSb quantum dot, improve the luminous efficiency of quantum dot.
4. the growing method of an InSb/GaSb quantum-dot structure device as claimed in claim 1 comprises the following steps:
Step 1: get GaSb substrate (100);
Step 2: at GaSb Grown GaSb bottom breaker, stop the upwards growth of defect in substrate;
Step 3: at the upper barrier layer of five yuan of materials of GaSb Grown AlGaInAsSb;
Step 4: resilient coating on growth GaSb on five yuan of barrier materials, for the InSb quantum dot of growing;
Step 5: reduce growth temperature, at GaSb padded surface deposit Sb, realize the surface modification of GaSb resilient coating;
Step 6: deposit InSb quantum dot on the GaSb resilient coating, this quantum dot has polar character;
Step 7: the rising growth temperature, deposit InSb quantum dot is carried out to annealing in process, make surface modifier Sb desorption;
Step 8: growth GaSb layer, quantum dot is protected;
Step 9: rising growth temperature, the barrier layer of five yuan of materials of growth AlGaInAsSb on the GaSb layer;
Step 10: growth GaSb cap rock completes the growth of whole InSb/GaSb quantum-dot structure device.
5. the growing method of InSb/GaSb quantum-dot structure device according to claim 4, it is characterized in that, adopt surface cohesion Sb to realize modification to the GaSb surface, can reduce the diffusion length of In atom, prevent that it is too fast in diffusion into the surface, help the formation of InSb quantum dot.
6. the growing method of InSb/GaSb quantum-dot structure device according to claim 4, is characterized in that, the thickness of GaSb bottom breaker is 300nm, and deposition temperature is 550 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10.
7. the growing method of InSb/GaSb quantum-dot structure device according to claim 4, its feature is at son, the thickness of five yuan of material barrier materials of low Al component AlGaInAsSb of non-doping is 100nm, 400 ℃ of growth temperatures, and the flow-rate ratio of five family's three clan sources is 15～20.
8. the growing method of InSb/GaSb quantum-dot structure device according to claim 4, is characterized in that, the thickness of GaSb bottom breaker is 300nm, and deposition temperature is 400 ℃, and deposition rate is 0.5 atomic layer/second, and the flow-rate ratio of five family's three clan sources is 8～10.
9. the growing method of InSb/GaSb quantum-dot structure device according to claim 4, is characterized in that, the deposition rate of InSb quantum dot is 0.01～0.02 atomic layer/second, and deposition thickness is 1～2 atomic layer, 300～350 ℃ of deposition temperatures.
10. the growing method of InSb/GaSb quantum-dot structure device according to claim 4, is characterized in that, in InSb Quantum Dots Growth process, needs to adopt annealing process.
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Cited By (5)
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| CN108847385A (en) * | 2018-06-11 | 2018-11-20 | 中国电子科技集团公司第四十四研究所 | A kind of GaAs base InAs quanta point material growth method |
| CN109217109A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院半导体研究所 | Quantum well structure, epitaxial structure based on digital alloy potential barrier and preparation method thereof |
| CN111244761A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院上海微***与信息技术研究所 | GaSb-based InSb quantum dot and preparation method thereof |
| WO2020134243A1 (en) * | 2018-12-28 | 2020-07-02 | Tcl科技集团股份有限公司 | Quantum well structure preparation method and quantum well structure |
| CN114197055A (en) * | 2022-02-18 | 2022-03-18 | 武汉高芯科技有限公司 | InAs/InSb strain superlattice material and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847385A (en) * | 2018-06-11 | 2018-11-20 | 中国电子科技集团公司第四十四研究所 | A kind of GaAs base InAs quanta point material growth method |
| CN108847385B (en) * | 2018-06-11 | 2020-11-06 | 中国电子科技集团公司第四十四研究所 | GaAs-based InAs quantum dot material growth method |
| CN109217109A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院半导体研究所 | Quantum well structure, epitaxial structure based on digital alloy potential barrier and preparation method thereof |
| WO2020134243A1 (en) * | 2018-12-28 | 2020-07-02 | Tcl科技集团股份有限公司 | Quantum well structure preparation method and quantum well structure |
| CN111384214A (en) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | Preparation method of quantum well structure and quantum well structure |
| CN111384214B (en) * | 2018-12-28 | 2021-07-23 | Tcl科技集团股份有限公司 | Preparation method of quantum well structure and quantum well structure |
| CN111244761A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院上海微***与信息技术研究所 | GaSb-based InSb quantum dot and preparation method thereof |
| CN114197055A (en) * | 2022-02-18 | 2022-03-18 | 武汉高芯科技有限公司 | InAs/InSb strain superlattice material and preparation method thereof |
| CN114197055B (en) * | 2022-02-18 | 2022-07-22 | 武汉高芯科技有限公司 | InAs/InSb strain superlattice material and preparation method thereof |
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Application publication date: 20131211 |