CN103441106A - Chip flip-mounting BGA encapsulating structure - Google Patents

Chip flip-mounting BGA encapsulating structure Download PDF

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Publication number
CN103441106A
CN103441106A CN201310380708XA CN201310380708A CN103441106A CN 103441106 A CN103441106 A CN 103441106A CN 201310380708X A CN201310380708X A CN 201310380708XA CN 201310380708 A CN201310380708 A CN 201310380708A CN 103441106 A CN103441106 A CN 103441106A
Authority
CN
China
Prior art keywords
metal
chip
substrate
plastic packaging
metal coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310380708XA
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Chinese (zh)
Inventor
李宗怿
顾骁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN201310380708XA priority Critical patent/CN103441106A/en
Publication of CN103441106A publication Critical patent/CN103441106A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to a chip flip-mounting BGA encapsulating structure which comprises a substrate (1). A chip (2) is mounted on the front face of the substrate (1) in a flip chip mode, a plurality of second metal lugs (5) are arranged on the front face of the chip (2), a plurality of first metal lugs (4) are arranged on the front face of the substrate (1) on the periphery of the chip (2), plastic packaging materials (6) encapsulate the peripheral area of the chip (2), the first metal lugs (4) and the second metal lugs (5), the plastic packaging materials (6) is flush with the top portions of the first metal lugs (4) and the top portions of the second metal lugs (5), a metal layer (7) is electroplated on the front face of the plastic packaging materials (6), and a plurality of metal balls (8) are arranged on the back face of the substrate (1). The chip flip-mounting BGA encapsulating structure has the advantages that under the condition that BGA encapsulating thickness is not increased, an integral metal cooling device is formed through an encapsulation technology, the cooling device is integrated on the BGA plastic package body, and overall cooling effects are improved.

Description

A kind of flip-chip bga structure
Technical field
The present invention relates to a kind of flip-chip bga structure, belong to the semiconductor packaging field.
Background technology
Now, the semiconductor packages industry is in order to meet the requirement of various high power consumption chip, it places fin (as shown in Figure 1) on the BGA surface mostly, although fin has increased the radiating effect of encapsulation TOP face, but also therefore increased the whole height of BGA product, being difficult to be applied to the encapsulation to BGA requires thinner product as mobile phone, the handheld devices such as notebook, and the chips such as AP are owing to considering multinuclear computing etc., its power requirement is also more and more higher, requirement to heat radiation is also more and more higher, finless form is difficult to competent requirement, but increase fin and be difficult to again meet the requirement of product applied environment to thickness.And flange-cooled BGA production method, normally after the BGA production and processing is complete, then use sizing material pressing fin, so fin directly not contacting with the thermal source of substrate or chip surface, its radiating effect is bad.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, a kind of flip-chip bga structure is provided, it is not in the situation that increase the BGA package thickness, by packaging technology, metal coupling is integrated on the BGA plastic-sealed body, the projection bottom surface contacts with substrate surface or chip surface, the projection end face makes itself and plastic packaging material electroplating surface metal layer form the heat abstractor of an integral body by electroplating technology, because metal coupling directly is connected with substrate surface or chip surface, heat can be directly conducted to the electroplated metal layer surface, and by the convection current radiation effects of electroplated metal layer surface and air, improved the integral heat sink effect.
The object of the present invention is achieved like this: a kind of flip-chip bga structure, it comprises substrate, described substrate front side has chip by the underfill upside-down mounting, described chip front side is provided with a plurality of the second metal couplings, substrate front side around described chip arranges a plurality of the first metal couplings, described chip, the zone of the first metal coupling and the second metal coupling periphery is encapsulated with plastic packaging material, described plastic packaging material flushes with the first metal coupling and the second metal coupling top, described plastic packaging material front is electroplate with metal level, described metal level is connected with the second metal coupling top with the first metal coupling, described substrate back is provided with a plurality of Metal Ball.
Further, a plurality of the first metal couplings are exposed in described plastic packaging material side.
Further, the shape of cross section of described the first metal coupling and the second metal coupling is square, circular, hexagon or octangle.
Compared with prior art, the present invention has following beneficial effect:
A kind of flip-chip bga structure of the present invention, it is not in the situation that increase the BGA package thickness, by packaging technology, metal coupling is integrated on the BGA plastic-sealed body, the projection bottom surface contacts with substrate surface or chip surface, the projection end face makes itself and plastic packaging material electroplating surface metal layer form an integral heat dissipation means by electroplating technology, because metal coupling directly is connected with substrate surface or chip surface, heat can be directly conducted to the electroplated metal layer surface, and, by the convection current radiation effects of electroplated metal layer surface and air, improved the integral heat sink effect; Metal coupling can adopt some fixed dimension specifications, convenient batch production, and can carry out flexible arrangement according to the needs of inner structure, inner hotspot location and the moulding of mould stream with link position, the contact area of substrate, chip surface, be conducive to produce in enormous quantities, also overcome and adopted monoblock heat radiating metal piece to need special phenomenon because die size is different, package dimension varies in size.
The accompanying drawing explanation
The structural representation that Fig. 1 is in the past common radiation type BGA.
Each operation schematic diagram that Fig. 2 ~ Fig. 8 is a kind of flip-chip bga structure of the present invention manufacture method.
The schematic diagram that Fig. 9 is a kind of flip-chip bga structure of the present invention.
The schematic diagram that Figure 10 is another embodiment of a kind of flip-chip bga structure of the present invention.
Wherein:
Substrate 1
Chip 2
Underfill 3
The first metal coupling 4
The second metal coupling 5
Plastic packaging material 6
Metal level 7
Metal Ball 8.
Embodiment
Referring to Fig. 9, a kind of flip-chip bga structure of the present invention, it comprises substrate 1, there is chip 2 in described substrate 1 front by underfill 3 upside-down mountings, described chip 2 fronts are provided with a plurality of the second metal couplings 5 by heat-conducting glue, substrate 1 front around described chip 2 arranges a plurality of the first metal couplings 4 by heat-conducting glue, described the first metal coupling 4 flushes with the second metal coupling 5 tops, described chip 2, the zone of the first metal coupling 4 and the second metal coupling 5 peripheries is encapsulated with plastic packaging material 6, described plastic packaging material 6 flushes with the first metal coupling 4 and the second metal coupling 5 tops, described plastic packaging material 6 fronts are electroplate with metal level 7, described metal level 7 is connected with the second metal coupling 5 tops with the first metal coupling 4, described substrate 1 back side is provided with a plurality of Metal Ball 8.
The shape of cross section of described the first metal coupling 4 and the second metal coupling 5 can be square, circular, hexagon, octangle etc., and metal coupling can be installed in SMT operation or load operation.
Its manufacture method is as follows:
Step 1, get a plate base
Referring to Fig. 2, get a plate base, contain printed circuit on substrate, the selection of substrate thickness can be selected according to product performance;
Step 2, load
Referring to Fig. 3, in the front of substrate, pass through chip in the underfill upside-down mounting;
Step 3, installation metal coupling
Referring to Fig. 4, the chip substrate front side on every side that completes load in step 2 is installed a plurality of the first metal derbies by heat-conducting glue, in chip front side, by heat-conducting glue, installs a plurality of the second metal derbies;
Step 4, plastic packaging
Participate in Fig. 5, the substrate front side that completes the metal coupling installation in step 3 is carried out the protection of epoxy resin plastic packaging, and epoxide resin material can be selected filler be arranged or do not have Packed kind according to product performance;
Step 5, grinding
Referring to Fig. 6, after completing the epoxy resin plastic packaging, step 4 carries out surface grinding, and make the first metal coupling and the second metal coupling top expose the plastic packaging material surface;
Step 6, electroplated metal layer
Referring to Fig. 7, the plastic packaging material electroplating surface last layer metal level after step 5 completes grinding;
Step 7, plant ball
Referring to Fig. 8, the substrate back after step 6 completes electroplated metal layer is planted a plurality of Metal Ball.
Another of a kind of flip-chip bga structure of the present invention implemented as shown in figure 10, it is by the unnecessary plastic packaging material in corner is cut after the electroplated metal layer operation, make the plastic packaging material side expose a plurality of the first metal couplings, thereby increase the contacting metal area of itself and air, promote the radiating efficiency with the cross-ventilation radiation.

Claims (3)

1. a flip-chip bga structure, it is characterized in that: it comprises substrate (1), described substrate (1) is positive has chip (2) by underfill (3) upside-down mounting, described chip (2) front is provided with a plurality of the second metal couplings (5), described chip (2) substrate (1) front on every side arranges a plurality of the first metal couplings (4), described chip (2), the peripheral zone of the first metal coupling (4) and the second metal coupling (5) is encapsulated with plastic packaging material (6), described plastic packaging material (6) flushes with the first metal coupling (4) and the second metal coupling (5) top, described plastic packaging material (6) front is electroplate with metal level (7), described metal level (7) is connected to form an integral heat dissipation means with the first metal coupling (4) and the second metal coupling (5) top by plating, described substrate (1) back side is provided with a plurality of Metal Ball (8).
2. a kind of flip-chip bga structure according to claim 1, it is characterized in that: a plurality of the first metal couplings (4) are exposed in described plastic packaging material (6) side.
3. a kind of flip-chip bga structure according to claim 1 and 2 is characterized in that: the shape of cross section of described the first metal coupling (4) and the second metal coupling (5) is square, circular, hexagon or octangle.
CN201310380708XA 2013-08-28 2013-08-28 Chip flip-mounting BGA encapsulating structure Pending CN103441106A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310380708XA CN103441106A (en) 2013-08-28 2013-08-28 Chip flip-mounting BGA encapsulating structure

Publications (1)

Publication Number Publication Date
CN103441106A true CN103441106A (en) 2013-12-11

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107369662A (en) * 2017-06-19 2017-11-21 北京嘉楠捷思信息技术有限公司 Heat radiator
CN110416166A (en) * 2018-04-27 2019-11-05 江苏长电科技股份有限公司 Semiconductor package and preparation method thereof
CN112151469A (en) * 2020-09-21 2020-12-29 青岛歌尔微电子研究院有限公司 Heat dissipation packaging structure, preparation method thereof and electronic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000307038A (en) * 1999-04-23 2000-11-02 Sony Corp Chip size package(csp) and manufacture thereof
JP2005327771A (en) * 2004-05-12 2005-11-24 Nec Electronics Corp Ball grid type semiconductor device
CN1909216A (en) * 2005-08-01 2007-02-07 恩益禧电子股份有限公司 Semiconductor package featuring metal lid member
CN101127334A (en) * 2006-06-20 2008-02-20 美国博通公司 Integrated circuit packages and its manufacture method
CN100401222C (en) * 2002-04-22 2008-07-09 株式会社东芝 Electronic apparatus
CN103021972A (en) * 2011-09-22 2013-04-03 国碁电子(中山)有限公司 Chip encapsulation structure and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000307038A (en) * 1999-04-23 2000-11-02 Sony Corp Chip size package(csp) and manufacture thereof
CN100401222C (en) * 2002-04-22 2008-07-09 株式会社东芝 Electronic apparatus
JP2005327771A (en) * 2004-05-12 2005-11-24 Nec Electronics Corp Ball grid type semiconductor device
CN1909216A (en) * 2005-08-01 2007-02-07 恩益禧电子股份有限公司 Semiconductor package featuring metal lid member
CN101127334A (en) * 2006-06-20 2008-02-20 美国博通公司 Integrated circuit packages and its manufacture method
CN103021972A (en) * 2011-09-22 2013-04-03 国碁电子(中山)有限公司 Chip encapsulation structure and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107369662A (en) * 2017-06-19 2017-11-21 北京嘉楠捷思信息技术有限公司 Heat radiator
CN107369662B (en) * 2017-06-19 2020-11-24 北京嘉楠捷思信息技术有限公司 Heat radiator
CN110416166A (en) * 2018-04-27 2019-11-05 江苏长电科技股份有限公司 Semiconductor package and preparation method thereof
CN110416166B (en) * 2018-04-27 2021-06-29 江苏长电科技股份有限公司 Semiconductor packaging structure and manufacturing method thereof
CN113380782A (en) * 2018-04-27 2021-09-10 江苏长电科技股份有限公司 Semiconductor packaging structure and manufacturing method thereof
CN113380782B (en) * 2018-04-27 2023-11-07 江苏长电科技股份有限公司 Semiconductor packaging structure
CN112151469A (en) * 2020-09-21 2020-12-29 青岛歌尔微电子研究院有限公司 Heat dissipation packaging structure, preparation method thereof and electronic device

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Application publication date: 20131211