CN103436729B - A kind of thermoelectric material and preparation method thereof - Google Patents
A kind of thermoelectric material and preparation method thereof Download PDFInfo
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- CN103436729B CN103436729B CN201310393941.1A CN201310393941A CN103436729B CN 103436729 B CN103436729 B CN 103436729B CN 201310393941 A CN201310393941 A CN 201310393941A CN 103436729 B CN103436729 B CN 103436729B
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Abstract
The invention provides a kind of thermoelectric material, comprise Sm and Te element, the atomic ratio of Sm element and Te element is 1:1 ~ 1:4, and this material has laminate structure.This thermoelectric material has that grain orientation is good, thermal conductivity is lower, density is high, the good feature of thermoelectricity capability.When doped with trace elements or compound second-phase wherein, its thermo-electric conversion effect can be improved further.Experiment confirms, this thermoelectric material preparation technology is simple, and thermoelectricity capability is good, therefore has a good application prospect.
Description
Technical field
The invention belongs to thermoelectric material field, be specifically related to a kind of Sm-Te base thermoelectricity material with good thermoelectricity capability and preparation method thereof.
Background technology
Thermoelectric generation technology is Seebeck effect (Seebeck) and the paltie effect (Peltier) that a class utilizes the inner carrier moving of semi-conductor, realizes the technology that heat energy and electric energy are directly changed mutually.Thermoelectric generation technology is not because it is containing huge transmission rig, have that volume is little, noiselessness, reliability are high, manufacturing process is simple, job costs are cheap, recycle energy and the plurality of advantages such as the life-span is permanent, thus cause giving more sustained attention of numerous country of the world as the new green power technology that one has a wide application prospect (comprise and utilize solar heat, factory's heat release, vehicle exhaust heat release and family's waste heat etc.).
The height of conversion efficiency of thermoelectric depends primarily on the size of zero dimension thermoelectric figure of merit ZT, and high efficiency of conversion needs large ZT value.Thermoelectric figure of merit ZT=α
2σ T/ κ, wherein α is Seebeck coefficient, and σ is specific conductivity, and κ is thermal conductivity, and T is absolute temperature, and as can be seen here, high Seebeck coefficient, high conductivityσ and low thermal conductivity κ are the keys improving ZT.
The bismuth telluride-base thermoelectric material of traditional near room temperature, and the In found recently
4se
2.35semiconductor compound thermoelectric material (Nature, 2009,459,965-968) all have layered crystal structure, on the direction being parallel to layer, crystalline structure distorts, lattice order is destroyed, cause phonon to be scattered appreciably, thermal conductivity is lower, therefore has larger thermoelectric figure of merit in the direction in which.Therefore in preparation process, need the grain orientation considering material.
Summary of the invention
The invention provides a kind of Novel hot electric material, this thermoelectric material comprises Sm and Te element, and the atomic ratio of Sm element and Te element is 1:1 ~ 1:4, and this material has laminate structure.
As preferably, described Sm element and the atomic ratio of Te element are 1:3.
As preferably, also trace element is comprised in described thermoelectric material, form Sm-Te base thermoelectricity material, the molar weight of this trace element accounts for 0.01% ~ 20% of this Sm-Te base thermoelectricity material integral molar quantity, more preferably 0.05% ~ 10%, this trace element preferably can substitute the simple substance of telluride samarium lattice, such as Bi, Se, Nd etc., or can the overall compound replacing telluride samarium lattice, such as Bi
2te
3, Sb
2te
3, NdTe
3, UTe
3deng.
As preferably, also Second Phase Particle is comprised in described thermoelectric material, form Sm-Te base thermoelectricity material, the molar weight of this Second Phase Particle accounts for 0.01% ~ 20% of this Sm-Te base thermoelectricity material integral molar quantity, more preferably 0.5% ~ 10%, this Second Phase Particle is preferably the higher nanometer of resistivity or non-nano material, i.e. poor conductor material, such as BN, AZO etc.
Present invention also offers a kind of method preparing above-mentioned thermoelectric material, this preparation method specifically comprises the steps:
Step 1, to take each element simple substance or compound according to the mol ratio of element each in thermoelectric material as starting material, and by this starting material Vacuum Package in silica tube;
Step 2, silica tube is placed in rocking furnace cavity, melting original material, then waves silica tube, starting material are mixed, then closes body of heater heating source, take out after silica tube is naturally cooled to room temperature with stove, or take out silica tube quenching in frozen water, obtain Sm-Te compound;
Step 3, silica tube is fixed in zone melting furnace, makes Sm-Te compound growing by zone melting from bottom silica tube, obtain Sm-Te base thermoelectricity material.
In described step 2, as preferably, the starting material melt temperature of setting is 450 ~ 1300 DEG C.
In described step 2, as preferably, the time of waving is more than or equal to 1 hour.
In described step 3, as preferably, the zone-melting temperature scope of setting 450 ~ 1400 DEG C, most preferably is 1150 DEG C ~ 1250 DEG C by more preferably 1100 DEG C ~ 1300 DEG C; Melting zone width is 10 ~ 40mm, and thermograde is 15 ~ 50 DEG C/cm, and the speed of growth is 5 ~ 30mm/H.
In described step 1, starting material comprise Sm element and Te element, as a kind of optimal way, also comprise trace element, the molar weight of this trace element accounts for 0.01% ~ 20% of this Sm-Te base thermoelectricity material integral molar quantity, and this trace element is easy to the alternative simple substance of lattice, such as Bi, Se, Nd etc., or be easy to the compound of overall lattice replacement, such as Bi
2te
3, Sb
2te
3, NdTe
3, UTe
3deng.
In described step 1, starting material comprise Sm element and Te element, as another kind of optimal way, also comprise second-phase material, the molar weight of this second-phase material accounts for 0.01% ~ 20% of this Sm-Te base thermoelectricity material integral molar quantity, this second-phase material is preferably the higher nanometer of resistivity or non-nano material, such as BN, AZO etc.
In order to improve the thermoelectricity capability of this thermoelectric material further, carrying out step 4 after step 3 and processing, obtaining Sm-Te base block thermoelectric material:
Step 4, the Sm-Te compound-material after growing by zone melting is placed in glove box, powder is ground to form in agate mortar, this powder is inserted in mould, then loads in discharge plasma agglomerating plant (SPS) and carry out pressure sintering, obtain Sm-Te base block thermoelectric material.
In described step 4, as preferably, the material powder particle size range after grinding is 5 ~ 500 μm.
In described step 4, as preferably, SPS sintering process keeps vacuum tightness to be less than 10Pa, and sintering temperature is 300 ~ 900 DEG C, and heat-up rate is 40 ~ 120 DEG C/min, and the sintering densification time is more than or equal to 1min.
In described step 4, described pressure process can take the mode of stepped pressure, or in the mode of the disposable pressurization of initial stage of sintering.
In described step 4, as preferably, applied pressure is more than or equal to 10MPa.
In sum, the invention provides a kind of novel thermoelectric material system, i.e. Sm-Te base thermoelectricity material.This Sm-Te base thermoelectricity material is laminate structure, has that grain orientation is good, thermal conductivity is lower, density is high, the good feature of thermoelectricity capability.In order to improve its thermo-electric conversion effect further, preferably doped with trace elements and compound second-phase in this Sm-Te base thermoelectricity material.Experiment confirms, this thermoelectric material preparation technology is simple, and thermoelectricity capability is good, therefore has a good application prospect.
Accompanying drawing explanation
Fig. 1 is SmTe obtained in embodiment 1
3thermoelectric material is along the electron scanning micrograph of the direction of growth;
Fig. 2 is SmTe obtained in embodiment 1
3thermoelectric material is along SmTe obtained in embodiment 1
3thermoelectric material along perpendicular to the direction of growth (A face) and be parallel to the direction of growth (B face) XRD figure spectrum different directions XRD figure compose;
Fig. 3 is SmTe obtained in embodiment 1,2
3the specific conductivity variation with temperature relation of base thermoelectricity material;
Fig. 4 is SmTe obtained in embodiment 1,2
3the Seebeck coefficient variation with temperature relation of base thermoelectricity material;
Fig. 5 is SmTe obtained in embodiment 1,2
3the thermal conductivity variation with temperature relation of base thermoelectricity material;
Fig. 6 is SmTe obtained in embodiment 1,2
3the ZT value variation with temperature relation of base thermoelectricity material;
Fig. 7 is SmTe obtained in embodiment 2,3,4,5
3the specific conductivity variation with temperature relation of base thermoelectricity material;
Fig. 8 is SmTe obtained in embodiment 2,3,4,5
3the Seebeck coefficient variation with temperature relation of base thermoelectricity material;
Fig. 9 is SmTe obtained in embodiment 2,3,4,5
3the thermal conductivity variation with temperature relation of base thermoelectricity material;
Figure 10 is SmTe obtained in embodiment 2,3,4,5
3the ZT value variation with temperature relation of base thermoelectricity material.
Embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail, it is pointed out that the following stated embodiment is intended to be convenient to the understanding of the present invention, and any restriction effect is not play to it.
Embodiment 1:
In the present embodiment, thermoelectric material is elementary composition by Sm and Te, and the atomic ratio of Sm element and Te element is 1:3, and this thermoelectric material has laminate structure, and the preparation method of this thermoelectric material is as follows:
(1) block samarium and block tellurium are weighed according to the mol ratio of 1:3, then put into the silica tube through cleaning, then this silica tube is vacuumized (to 10
-3below torr) and use acetylene flame to be encapsulated by silica tube;
(2) silica tube through Vacuum Package is placed in high temperature and waves smelting furnace, wave after 950 DEG C of melting half an hour, the time of waving is 6 hours, is then taken out in melt temperature by silica tube and is placed in air ambient naturally cooling, obtaining Sm-Te compound;
(3) be placed in zone melting furnace grow being cooled to the silica tube after room temperature, zone-melting temperature is 1150 DEG C, and the speed of growth adopted is 10mm/H, and melting zone width 15mm can obtain Sm-Te base thermoelectricity material after end of processing is melted in district.
Above-mentioned obtained thermoelectric material along the direction of growth microstructure as shown in Figure 1, can find out that this thermoelectric material is laminate structure.As shown in Figure 2, in Fig. 2, A face refers to the face of melting direction perpendicular to district to the XRD figure of this thermoelectric material, and B face refers to and is parallel to the face that direction is melted in district.The thermoelectricity capability parameter of this material is as shown in Fig. 3 ~ Fig. 6, and wherein " ∥ " symbol refers to the thermoelectricity capability being parallel to A face, and " ⊥ " symbol refers to the thermoelectricity capability perpendicular to A face.As can be seen from the above data, this Sm-Te base thermoelectricity material presents obvious anisotropy.
Thermoelectric property characterization is carried out to above-mentioned obtained thermoelectric material, in 300K ~ 720K temperature range, its thermoelectricity capability parameter such as mark in Fig. 3 ~ Fig. 6 contains shown in the curve of " SmTe-1150 ", wherein SmTe3-1150-∥ is the curve being parallel to A face in embodiment 1, and SmTe3-1150-⊥ is the curve perpendicular to A face in embodiment 1.Result shows that its ZT value continues to increase in institute's Range of measuring temp, and in the temperature range of 600K to 720K, ZT value suddenly increases.We can predict that in one section of temperature range after 720K, the raising along with measuring tempeature also improves by its ZT value further.
Embodiment 2:
In the present embodiment, the composition structure of thermoelectric material is identical with embodiment 1.Its preparation method is substantially identical with embodiment 1, and difference is that in step (3), zone-melting temperature is 1250 DEG C, and this step is specially:
(3) be placed in zone melting furnace grow being cooled to the silica tube after room temperature, zone-melting temperature is 1250 DEG C, and the speed of growth adopted is 10mm/H, melting zone width 15mm.
Thermoelectricity capability parameter such as the mark in Fig. 3 ~ Fig. 6 of this material contains shown in the curve of " SmTe3-1250 ", the thermoelectricity capability of above-mentioned obtained thermoelectric material and embodiment 1 are compared, can find out that the ZT value impact of different zone-melting temperature on Sm-Te base thermoelectricity material is larger, at high-temperature area, the ZT value with this system of rising of zone-melting temperature has obvious lifting.
Embodiment 3:
In the present embodiment, the composition structure of thermoelectric material is identical with embodiment 1.Its preparation method is substantially identical with embodiment 1, and difference carries out following steps (4) process after being step (3).
(4) silica tube top is knocked continuously gently with metal blunt after end of processing is melted in district, sample is taken out in silica tube fragmentation, and the agate mortar Sm-Te material of synthesis being placed in glove box grinds to form the particle of granularity 80 ~ 120 μm, particle after grinding is loaded in graphite jig, is placed in SPS sintering oven with the pressure precompressed of 30MPa.The temperature rise rate of SPS sintering is 60 DEG C/min, and after reaching 700 DEG C, pressure is increased to 60MPa, after insulation 2min, closes heating source Temperature fall to room temperature, obtains block thermoelectric material.
The microstructure of above-mentioned obtained block thermoelectric material and XRD figure spectrum present obvious anisotropy equally.
Thermoelectric property characterization is carried out, as shown in Fig. 7 ~ Figure 10 to above-mentioned obtained block thermoelectric material.Compare with embodiment 2, can find out that different process is larger on the impact of the specific conductivity of Sm-Te base thermoelectricity material, thermal conductivity and ZT value.After carrying out pressure sintering block to the thermoelectric material after growing by zone melting, the thermoelectric figure of merit of thermoelectric material is further enhanced.
Embodiment 4:
In the present embodiment, thermoelectric material is by Sm element, Te element, and trace selenium Se is elementary composition, wherein the atomic ratio of Sm element and Te element is 1:3, the molar weight of this selenium Se element accounts for 0.05% of this Sm-Te base thermoelectricity material integral molar quantity, this thermoelectric material has laminate structure, and the preparation method of this thermoelectric material is as follows:
(1) block samarium and block tellurium are weighed according to the mol ratio of 1:3, and take the trace selenium (Se) accounting for Sm-Te body material molar percentage 0.05%, above-mentioned raw materials and Se are loaded in the silica tube after cleaning, then this silica tube is vacuumized (to 10
-3below torr) and utilize acetylene flame to be encapsulated by silica tube;
(2) silica tube through Vacuum Package is placed in high temperature and waves smelting furnace, wave after 950 DEG C of melting half an hour, the time of waving is 6 hours, is then taken out in melt temperature by silica tube and is placed in air ambient naturally cooling, obtaining Sm-Te compound;
(3) be placed in zone melting furnace grow being cooled to the silica tube after room temperature, zone-melting temperature is 1250 DEG C, and the speed of growth adopted is 10mm/H, melting zone width 15mm; (4) silica tube top is knocked continuously gently with metal blunt after end of processing is melted in district, sample is taken out in silica tube fragmentation, and the agate mortar Sm-Te material of synthesis being placed in glove box grinds to form the particle of granularity 80 ~ 120 μm, particle after grinding is loaded in graphite jig, be placed in SPS sintering oven with the pressure precompressed of 30MPa, the temperature rise rate of SPS sintering is 60 DEG C/min, after reaching 700 DEG C, pressure is increased to 60MPa, after insulation 2min, close heating source Temperature fall to room temperature, obtain Sm-Te base thermoelectric block body material.
The microstructure of above-mentioned obtained block thermoelectric material and XRD figure spectrum present obvious anisotropy equally.
Thermoelectric property characterization is carried out to above-mentioned obtained block thermoelectric material, as shown in Fig. 7 ~ Figure 10, the wherein corresponding embodiment 3 of the corresponding embodiment 2, SmTe3-SPS of SmTe3-ZM, the corresponding embodiment 5 of the corresponding embodiment 4, SmTe3+0.5%BN-SPS of SmTe3-0.05%Se-SPS.Compare with embodiment 3, under same process condition can be found out, after the micro-Se simple substance that adulterates in the base, significantly can reduce the thermal conductivity of Sm-Te base block thermoelectric material, improve the ZT value of this block thermoelectric material.
Embodiment 5:
In the present embodiment, thermoelectric material is by Sm element, Te element, and second-phase BN nano particle composition, wherein the atomic ratio of Sm element and Te element is 1:3, the molar weight of this second-phase BN nano particle accounts for 0.5% of this Sm-Te base thermoelectricity material integral molar quantity, this thermoelectric material has laminate structure, and the preparation method of this thermoelectric material is as follows:
(1) block samarium and block tellurium are weighed according to the mol ratio of 1:3, and take account for Sm-Te body material molar percentage 0.5% BN nano particle as second-phase, above-mentioned raw materials and second-phase are loaded in the silica tube after cleaning, then this silica tube is vacuumized (to 10
-3below torr) and utilize acetylene flame to be encapsulated by silica tube;
(2) silica tube through Vacuum Package is placed in high temperature and waves smelting furnace, wave after 950 DEG C of melting half an hour, the time of waving is 6 hours, is finally taken out in melt temperature by silica tube and is placed in air ambient naturally cooling, obtaining Sm-Te compound thus;
(3) be placed in zone melting furnace grow being cooled to the silica tube after room temperature, zone-melting temperature is 1250 DEG C, and the speed of growth adopted is 10mm/H, melting zone width 15mm;
(4) silica tube top is knocked continuously gently with metal blunt after end of processing is melted in district, sample is taken out in silica tube fragmentation, and the agate mortar Sm-Te material of synthesis being placed in glove box grinds to form the particle of granularity 80 ~ 120 μm, particle after grinding is loaded in graphite jig, is placed in SPS sintering oven with the pressure precompressed of 30MPa.The temperature rise rate of SPS sintering is 60 DEG C/min, and after reaching 700 DEG C, pressure is increased to 60MPa, after insulation 2min, closes heating source Temperature fall to room temperature, obtains Sm-Te base thermoelectric block body material.
The microstructure of above-mentioned obtained block thermoelectric material and XRD figure spectrum present obvious anisotropy equally.
Thermoelectric property characterization is carried out, as shown in Fig. 7 ~ Figure 10 to above-mentioned obtained block thermoelectric material.Compare with embodiment 3, under same process condition can be found out, in the base after composite Nano second-phase, effectively can improve the ZT value of Sm-Te base block thermoelectric material.
Above-described embodiment has been described in detail technical scheme of the present invention; be understood that and the foregoing is only specific embodiments of the invention; be not limited to the present invention; all make in spirit of the present invention any amendment, supplement or similar fashion substitute etc., all should be included within protection scope of the present invention.
Claims (24)
1. a thermoelectric material, is characterized in that: this thermoelectric material by Sm element and Te elementary composition, the atomic ratio of Sm element and Te element is 1:1 ~ 1:4, and this material has laminate structure.
2. thermoelectric material as claimed in claim 1, is characterized in that: described Sm element and the atomic ratio of Te element are 1:3.
3. the preparation method of thermoelectric material as claimed in claim 1 or 2, is characterized in that: comprise the steps:
Step 1, to take each element simple substance or compound according to the mol ratio of element each in thermoelectric material as starting material, and by this starting material Vacuum Package in silica tube;
Step 2, silica tube is placed in rocking furnace cavity, melting original material, then waves silica tube, starting material are mixed, then closes body of heater heating source, take out after silica tube is naturally cooled to room temperature with stove, or take out silica tube quenching in frozen water, obtain Sm-Te compound;
Step 3, silica tube is fixed in zone melting furnace, makes Sm-Te compound growing by zone melting from bottom silica tube, obtain Sm-Te base thermoelectricity material.
4. the preparation method of thermoelectric material as claimed in claim 3, it is characterized in that: in described step 3, zone-melting temperature scope is 450 ~ 1400 DEG C.
5. the preparation method of thermoelectric material as claimed in claim 4, is characterized in that: described zone-melting temperature scope is 1100 DEG C ~ 1300 DEG C.
6. the preparation method of thermoelectric material as claimed in claim 5, is characterized in that: described zone-melting temperature scope is 1150 DEG C ~ 1250 DEG C.
7. the preparation method of thermoelectric material as claimed in claim 3, it is characterized in that: carry out step 4 after step 3 and process: the Sm-Te compound-material after growing by zone melting is placed in glove box, powder is ground to form in agate mortar, this powder is inserted in mould, then load in discharge plasma agglomerating plant and carry out pressure sintering, obtain Sm-Te base block thermoelectric material.
8. the preparation method of thermoelectric material as claimed in claim 7, it is characterized in that: in described step 4, sintering process keeps vacuum tightness to be less than 10Pa, and sintering temperature is 300 ~ 900 DEG C, heat-up rate is 40 ~ 120 DEG C/min, and the sintering densification time is more than or equal to 1min.
9. a thermoelectric material, is characterized in that: this thermoelectric material is made up of Sm element, Te element and trace element, and the atomic ratio of Sm element and Te element is 1:1 ~ 1:4, and this material has laminate structure; The molar weight of described trace element accounts for 0.01% ~ 20% of this thermoelectric material integral molar quantity, and described trace element is the simple substance that can substitute telluride samarium lattice, or can the overall compound replacing telluride samarium lattice.
10. thermoelectric material as claimed in claim 9, is characterized in that: the molar weight of described trace element accounts for 0.05% ~ 10% of this thermoelectric material integral molar quantity.
The preparation method of 11. thermoelectric materials as described in claim 9 or 10, is characterized in that: comprise the steps:
Step 1, to take each element simple substance or compound according to the mol ratio of element each in thermoelectric material as starting material, and by this starting material Vacuum Package in silica tube;
Step 2, silica tube is placed in rocking furnace cavity, melting original material, then waves silica tube, starting material are mixed, then closes body of heater heating source, take out after silica tube is naturally cooled to room temperature with stove, or take out silica tube quenching in frozen water, obtain Sm-Te compound;
Step 3, silica tube is fixed in zone melting furnace, makes Sm-Te compound growing by zone melting from bottom silica tube, obtain Sm-Te base thermoelectricity material.
The preparation method of 12. thermoelectric materials as claimed in claim 11, it is characterized in that: in described step 3, zone-melting temperature scope is 450 ~ 1400 DEG C.
The preparation method of 13. thermoelectric materials as claimed in claim 12, is characterized in that: described zone-melting temperature scope is 1100 DEG C ~ 1300 DEG C.
The preparation method of 14. thermoelectric materials as claimed in claim 13, is characterized in that: described zone-melting temperature scope is 1150 DEG C ~ 1250 DEG C.
The preparation method of 15. thermoelectric materials as claimed in claim 11, it is characterized in that: carry out step 4 after step 3 and process: the Sm-Te compound-material after growing by zone melting is placed in glove box, powder is ground to form in agate mortar, this powder is inserted in mould, then load in discharge plasma agglomerating plant and carry out pressure sintering, obtain Sm-Te base block thermoelectric material.
The preparation method of 16. thermoelectric materials as claimed in claim 15, it is characterized in that: in described step 4, sintering process keeps vacuum tightness to be less than 10Pa, and sintering temperature is 300 ~ 900 DEG C, heat-up rate is 40 ~ 120 DEG C/min, and the sintering densification time is more than or equal to 1min.
17. 1 kinds of thermoelectric materials, is characterized in that: this thermoelectric material is made up of Sm element, Te element and Second Phase Particle, and the atomic ratio of Sm element and Te element is 1:1 ~ 1:4, and this material has laminate structure; The molar weight of described Second Phase Particle accounts for 0.01% ~ 20% of this thermoelectric material integral molar quantity, and described Second Phase Particle is bad conducting material.
18. thermoelectric materials as claimed in claim 17, is characterized in that: the molar weight of described Second Phase Particle accounts for 0.5% ~ 10% of this thermoelectric material integral molar quantity.
The preparation method of 19. thermoelectric materials as described in claim 17 or 18, is characterized in that: comprise the steps:
Step 1, to take each element simple substance or compound according to the mol ratio of element each in thermoelectric material as starting material, and by this starting material Vacuum Package in silica tube;
Step 2, silica tube is placed in rocking furnace cavity, melting original material, then waves silica tube, starting material are mixed, then closes body of heater heating source, take out after silica tube is naturally cooled to room temperature with stove, or take out silica tube quenching in frozen water, obtain Sm-Te compound;
Step 3, silica tube is fixed in zone melting furnace, makes Sm-Te compound growing by zone melting from bottom silica tube, obtain Sm-Te base thermoelectricity material.
The preparation method of 20. thermoelectric materials as claimed in claim 19, it is characterized in that: in described step 3, zone-melting temperature scope is 450 ~ 1400 DEG C.
The preparation method of 21. thermoelectric materials as claimed in claim 20, is characterized in that: described zone-melting temperature scope is 1100 DEG C ~ 1300 DEG C.
The preparation method of 22. thermoelectric materials as claimed in claim 21, is characterized in that: described zone-melting temperature scope is 1150 DEG C ~ 1250 DEG C.
The preparation method of 23. thermoelectric materials as claimed in claim 19, it is characterized in that: carry out step 4 after step 3 and process: the Sm-Te compound-material after growing by zone melting is placed in glove box, powder is ground to form in agate mortar, this powder is inserted in mould, then load in discharge plasma agglomerating plant and carry out pressure sintering, obtain Sm-Te base block thermoelectric material.
The preparation method of 24. thermoelectric materials as claimed in claim 23, it is characterized in that: in described step 4, sintering process keeps vacuum tightness to be less than 10Pa, and sintering temperature is 300 ~ 900 DEG C, heat-up rate is 40 ~ 120 DEG C/min, and the sintering densification time is more than or equal to 1min.
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| CN104410328A (en) * | 2014-10-28 | 2015-03-11 | 上海翌先信息科技有限公司 | Novel low-temperature-difference generating heat dissipation technology |
| CN106449957B (en) * | 2016-11-14 | 2021-12-10 | 苏州科技大学 | Bismuth telluride-based P-type thermoelectric material and preparation method thereof |
| CN110760933B (en) * | 2019-11-28 | 2021-06-15 | 中国科学院上海硅酸盐研究所 | Preparation method of rare earth telluride based high-temperature thermoelectric material |
| CN113004045A (en) * | 2019-12-18 | 2021-06-22 | 中国科学院上海硅酸盐研究所 | High-content heavy element doped beta-FeSi2Base thermoelectric material and preparation method thereof |
| CN114481290B (en) * | 2022-02-15 | 2023-05-23 | 深圳热电新能源科技有限公司 | Vertical zone melting furnace and preparation method for preparing magnesium bismuth sulfide-based thermoelectric crystal by using vertical zone melting furnace |
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| Title |
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| Thermoelectric Properties of the Hot-Pressed Bi2(Te0.85Se0.15)3 Alloy with Addition of BN Powders;Sun Kyung Lee et al.;《METALS AND MATERIALS》;20001231;第6卷(第6期);571~575 * |
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| CN103436729A (en) | 2013-12-11 |
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