CN103436387A - Rough polishing cleaning fluid used before etching of monocrystal silicon chip - Google Patents
Rough polishing cleaning fluid used before etching of monocrystal silicon chip Download PDFInfo
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- CN103436387A CN103436387A CN2013103651705A CN201310365170A CN103436387A CN 103436387 A CN103436387 A CN 103436387A CN 2013103651705 A CN2013103651705 A CN 2013103651705A CN 201310365170 A CN201310365170 A CN 201310365170A CN 103436387 A CN103436387 A CN 103436387A
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Abstract
The invention discloses cleaning fluid rough polishing cleaning fluid used before etching of a monocrystal silicon chip. The cleaning fluid is mainly composed of inorganic base, oxidant, and the balance of water, wherein the mass ratio of the inorganic base and the water is 0.8-5%, and the mass ratio of the oxidant and the water is 1.5-5.6%. The invention also discloses a preparation method and a using method for the rough polishing cleaning fluid used before the etching of the monocrystal silicon chip. Through the adoption of the fluid and the using method, compared with a conventional rough polishing technology not being subjected to cleaning by the cleaning fluid, the appearing probability of particles, metal spots, organic matter spots, and natural oxidation films (such as fingerprints and white spotting pieces) on the surface of the silicon chip can be effectively lowered, the etching effect is improved, the yield of the silicon chip is promoted, and the production efficiency of an enterprise is improved.
Description
Technical field
The present invention relates to a kind of for rough polishing scavenging solution and using method thereof before fine-hair maring using monocrystalline silicon slice.
Background technology
Can cause affected layer in various degree on the surface of silicon chip in the line cutting process; The residual cut-washing liquid of silicon chip surface, the wrapping paper that contacts with silicon chip pollute in addition, and the particle of silicon chip surface, metal are stained, organism is stained, natural oxide film etc. all can have a strong impact on the making herbs into wool effect of silicon chip and electrical property, the yield rate of cell piece.
Current most of company adopts is that inorganic alkali lye or the mixture that uses mineral alkali and the Organic Alcohol silicon chip before to making herbs into wool carries out rough polishing or cleaning, although this scheme can be removed the affected layer of silicon chip surface effectively, but stain with removal effects such as organic contaminations not good to the metal of silicon chip surface, while making silicon wafer wool making, because surface contamination causes surface, speed of reaction is inconsistent everywhere, thereby has affected the electrical property of homogeneity, cell piece of matte and yield rate etc.; Also has part company in order to reach the purpose of effectively removing impurities on surface of silicon chip and pollution, increased separately the pre-washing operation before the making herbs into wool rough polishing, this scheme needs independent cleaning equipment, the processing of fixed capital, human cost and waste water and the input of discharge costs have not only been increased, and the selection of clean-out system, the stability of cleaning scheme proportioning, the impact that also can cause the electrical property of making herbs into wool effect and later stage finished product cell piece.
Summary of the invention
Goal of the invention: the object of the invention is for the deficiencies in the prior art, provide a kind of for rough polishing scavenging solution and using method before fine-hair maring using monocrystalline silicon slice, effectively rough polishing and pre-washing are fused together, on the basis of dropping at Cost reduction, can reach excellent making herbs into wool effect, the probability that particle, the metal that can effectively reduce silicon chip surface stained, organism is stained, natural oxide film (as finger-marks, hickie sheet) produces.
Technical scheme: of the present invention a kind of for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice: as mainly to be formed by mineral alkali, oxygenant and water; The mass ratio of described mineral alkali and water is 0.8-5%; The mass ratio of described oxygenant and water is 1.5-5.6%.
Described water is deionized water.
The mass ratio of described mineral alkali and water is preferably 1.8-2.5%; Described mineral alkali is preferably one or both of sodium hydroxide or potassium hydroxide.
The mass ratio of described oxygenant and water is preferably 3-4.5%; Described oxygenant is preferably hypochlorite.
Described hypochlorite is preferably clorox.
The described compound method for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice comprises following preparation process:
(1) according to the long-pending size of monocrystalline wool-weaving machine rough polishing cell body, filled with water in cell body;
(2) mineral alkali is dissolved in the deionized water of step (1), obtains basic solution;
(3) oxygenant added in the basic solution of step (2) and mix.
Described water is deionized water.
The mass ratio of described mineral alkali and water is preferably 1.8-2.5%; Described mineral alkali is preferably one or both of sodium hydroxide or potassium hydroxide.
The mass ratio of described oxygenant and water is preferably 3-4.5%; Described oxygenant is preferably hypochlorite.
Described hypochlorite is preferably clorox.
Rough polishing purging method before described fine-hair maring using monocrystalline silicon slice, be immersed in silicon single crystal in the rough polishing scavenging solution and carry out the rough polishing cleaning, and during cleaning, temperature is 50-70 ℃, and scavenging period is 80-300s.
Compared with prior art, its beneficial effect is in the present invention: 1, product of the present invention perfectly is fused together pre-washing before making herbs into wool and rough polishing, has reduced input and the chemical cost of fixed capital, human cost.2, the configuration of product of the present invention and operation are simple, good with existing technology and equipment amalgamation, do not have equipment cost to increase, technology stability and reproducible.3, making herbs into wool rough polishing liquid nontoxicity of the present invention, without burning and explosion hazard, to human body and environment without harm.4, after adopting solution of the present invention and using method, with do not compare through original rough polishing technique, the probability that particle, the metal that can effectively reduce silicon chip surface stained, organism is stained, natural oxide film (as finger-marks, hickie sheet) occurs, improve the making herbs into wool effect, promote the silicon chip yield rate, improve the production efficiency of enterprise.The mass ratio of the mineral alkali 5, adopted and mass ratio, oxygenant and the water of water, to contact the silicon chip polluted with wrapping paper, and the silicon chip of the pollution such as silicon chip surface has metal to stain, organism is stained to improve effect more obvious.6, adopt the mass ratio of the mass ratio of preferred mineral alkali and water, preferred oxygenant and water, can reduce the rough polishing scavenging period, and can not exert an influence to fine-hair maring using monocrystalline silicon slice because of mineral alkali and oxygenant high density.7, adopt preferred mineral alkali and preferred oxygenant, rapider with pollutant reaction, can further reduce the pollutions such as metal is stained, organism is stained, reduce the rough polishing scavenging period.8, the present invention also is applicable to because pollution causes the making herbs into wool of bad, do over again in the manufacture of solar cells process, and the good effect of doing over again is arranged.
The accompanying drawing explanation
Fig. 1 is the flying-spot microscope orthographic plan that does not pass through the silicon chip surface matte of rough polishing cleaning and texturing.
Fig. 2 is the flying-spot microscope orthographic plan of the silicon chip surface matte of making herbs into wool after rough polishing is cleaned.
Embodiment
Below technical solution of the present invention is elaborated, but protection scope of the present invention is not limited to described embodiment.
embodiment 1:of the present invention for rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice, its preparation process is as follows
(1) according to the long-pending size of monocrystalline wool-weaving machine rough polishing cell body, filling 50L deionized water in cell body;
(2) the 0.4kg mineral alkali is dissolved in the deionized water of step (1), obtains basic solution;
(3) the 2.5L oxygenant added in the basic solution of step (2) and mix.
Silicon single crystal is immersed in the rough polishing scavenging solution and carries out the rough polishing cleaning, and temperature is 50 ℃, time 80s.By the solar silicon wafers after cleaning, the technique of the making herbs into wool general according to photovoltaic industry is carried out making herbs into wool, obtains the making herbs into wool silicon chip, contrast matte effect.
Fig. 2 has provided the microscope orthographic plan of making herbs into wool silicon chip surface matte after rough polishing is cleaned, and with the matte figure without the rough polishing cleaning and texturing in Fig. 1, compares, and the pyramid size of the formation after Wafer Cleaning is more even, and the surface cleaning effect is better, and cashmere output rate is higher.
embodiment 2:of the present invention for rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice, its preparation process is as follows
(1) according to the long-pending size of monocrystalline wool-weaving machine rough polishing cell body, filling 50L deionized water in cell body;
(2) the 2.5kg mineral alkali is dissolved in the deionized water of step (1), obtains basic solution;
(3) the 9.35L oxygenant added in the basic solution of step (2) and mix.
Silicon single crystal is immersed in the rough polishing scavenging solution and carries out the rough polishing cleaning, and temperature is 70 ℃, time 300s.By the solar silicon wafers after cleaning, the technique of the making herbs into wool general according to photovoltaic industry is carried out making herbs into wool, obtains the making herbs into wool silicon chip.
As mentioned above, although meaned and explained the present invention with reference to specific embodiment, it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite that does not break away from the claims definition, can make in the form and details various variations to it.
Claims (10)
1. one kind for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice, it is characterized in that: mainly mineral alkali, oxygenant and water, consist of; The mass ratio of described mineral alkali and water is 0.8-5%; The mass ratio of described oxygenant and water is 1.5-5.6%.
2. described for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice according to claim 1, it is characterized in that: described water is deionized water.
3. described for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice according to claim 1, it is characterized in that: the mass ratio of described mineral alkali and water is 1.8-2.5%; Described mineral alkali is one or both of sodium hydroxide or potassium hydroxide.
4. described for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice according to claim 1, it is characterized in that: the mass ratio of described oxygenant and water is 3-4.5%; Described oxygenant is hypochlorite.
5. described for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice according to claim 4, it is characterized in that: described hypochlorite is clorox.
6. according to the described compound method for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice of claim 1, it is characterized in that comprising following preparation process:
(1) according to the long-pending size of monocrystalline wool-weaving machine rough polishing cell body, filled with water in cell body;
(2) mineral alkali is dissolved in the deionized water of step (1), obtains basic solution;
(3) oxygenant added in the basic solution of step (2) and mix.
7. according to claim 6 for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice, it is characterized in that: described water is deionized water.
8. according to claim 6 for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice, it is characterized in that: the mass ratio of described mineral alkali and water is 1.8-2.5%; Described mineral alkali is one or both of sodium hydroxide or potassium hydroxide.
9. according to claim 6 for the rough polishing scavenging solution before fine-hair maring using monocrystalline silicon slice, it is characterized in that: the mass ratio of described oxygenant and water is 3-4.5%; Described oxygenant is clorox.
According to 1 described rough polishing scavenging solution to fine-hair maring using monocrystalline silicon slice before the rough polishing purging method, it is characterized in that silicon single crystal is immersed in the rough polishing scavenging solution and carries out the rough polishing cleaning, during cleaning, temperature is 50-70 ℃, scavenging period is 80-300s.
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| CN2013103651705A CN103436387A (en) | 2013-08-20 | 2013-08-20 | Rough polishing cleaning fluid used before etching of monocrystal silicon chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404627A (en) * | 2014-10-24 | 2015-03-11 | 苏州阿特斯阳光电力科技有限公司 | Surface pretreatment process before crystalline silicon RIE fleece making |
| CN113380923A (en) * | 2021-05-27 | 2021-09-10 | 广东爱旭科技有限公司 | Method for manufacturing single crystal PERC battery capable of reducing metal impurities and battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101654810A (en) * | 2009-09-18 | 2010-02-24 | 华东师范大学 | Method for preparing reflection-resisting layer on silicon slice |
| CN102005504A (en) * | 2010-10-15 | 2011-04-06 | 锦州华昌光伏科技有限公司 | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency |
| CN102234597A (en) * | 2010-04-26 | 2011-11-09 | 东友Fine-Chem股份有限公司 | Cleaning composition |
-
2013
- 2013-08-20 CN CN2013103651705A patent/CN103436387A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101654810A (en) * | 2009-09-18 | 2010-02-24 | 华东师范大学 | Method for preparing reflection-resisting layer on silicon slice |
| CN102234597A (en) * | 2010-04-26 | 2011-11-09 | 东友Fine-Chem股份有限公司 | Cleaning composition |
| CN102005504A (en) * | 2010-10-15 | 2011-04-06 | 锦州华昌光伏科技有限公司 | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404627A (en) * | 2014-10-24 | 2015-03-11 | 苏州阿特斯阳光电力科技有限公司 | Surface pretreatment process before crystalline silicon RIE fleece making |
| CN104404627B (en) * | 2014-10-24 | 2017-07-25 | 苏州阿特斯阳光电力科技有限公司 | A kind of surface pre-treating process before crystalline silicon RIE making herbs into wool |
| CN113380923A (en) * | 2021-05-27 | 2021-09-10 | 广东爱旭科技有限公司 | Method for manufacturing single crystal PERC battery capable of reducing metal impurities and battery |
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Application publication date: 20131211 |