CN103434203B - Anti-fingerprint film and preparation method thereof - Google Patents
Anti-fingerprint film and preparation method thereof Download PDFInfo
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- CN103434203B CN103434203B CN201310300953.5A CN201310300953A CN103434203B CN 103434203 B CN103434203 B CN 103434203B CN 201310300953 A CN201310300953 A CN 201310300953A CN 103434203 B CN103434203 B CN 103434203B
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Abstract
The invention discloses a kind of anti-fingerprint film and preparation method thereof, anti-fingerprint film comprises base material, and substrate surface deposits silicon oxide layer, the fluoride layer that thickness is 15-35nm successively.First choose processed product as base material, substrate surface cleaned, dedusting; Then magnetron sputtering coater is utilized to carry out Ion Cleaning successively, be coated with silicon oxide layer, dedusting; Utilize the depositing fluorinated nitride layer of vacuum evaporating coating machine afterwards.Product appearance can be made to keep clean, make the dirty very easily wiped clean such as fingerprint, strengthen product surface hardness.
Description
Technical field
The present invention relates to a kind of filth-resisting thin film, particularly relate to a kind of anti-fingerprint film and preparation method thereof.
Background technology
Current electronic product extensive use, particularly camera lens, precison optical component, panel computer, LCD TV, mobile phone, touch screen etc. product, these products are dirty with being easy to be stained with fingerprint, sweat, grease etc. in the frequent contact process of human skin, and this dirty very difficult wiping, thus have impact on performance and the appearance of product.
In prior art, Chinese patent (application number is 201010205501.5) a kind of anti-fingerprint film and preparation method thereof, at the thick PFPE of plastic rubber substrate surface deposition 50-30nm or organosilicon polymer film.Although there is certain anti-fingerprint, effect is still undesirable, and product surface hardness is lower.
Summary of the invention
The object of this invention is to provide a kind ofly make product appearance keep clean, make the dirty very easily wiped clean such as fingerprint, anti-fingerprint film strengthening product surface hardness and preparation method thereof.
The object of the invention is to be achieved through the following technical solutions:
Anti-fingerprint film of the present invention, comprises base material, and described substrate surface is silicon oxide layer deposited, fluoride layer successively, and the gross thickness of described silicon oxide layer and fluoride layer is 15-35nm.
The preparation method of above-mentioned anti-fingerprint film of the present invention, comprises the steps:
First, choose processed product as base material, substrate surface cleaned, dedusting;
Then, magnetron sputtering coater is utilized to carry out Ion Cleaning successively, be coated with silicon oxide layer, dedusting;
Afterwards, the depositing fluorinated nitride layer of vacuum evaporating coating machine is utilized.
As seen from the above technical solution provided by the invention, anti-fingerprint film that the embodiment of the present invention provides and preparation method thereof, owing to being 15-35nm silicon oxide layer, fluoride layer by magnetron sputtering coater and vacuum evaporating coating machine at substrate surface successively deposit thickness, product appearance can being made to keep clean, make the dirty very easily wiped clean such as fingerprint, strengthen product surface hardness.
Detailed description of the invention
To be described in further detail the embodiment of the present invention below.
Anti-fingerprint film of the present invention, its preferably detailed description of the invention be:
Comprise base material, described substrate surface deposits silicon oxide layer, fluoride layer successively, and the gross thickness of described silicon oxide layer and fluoride layer is 15-35nm.
The general formula of described silica is Si
xo
y, described fluoride is the mixture of multiple fluoro-based polymers;
Described base material be following any one: PC plastic plate, PMMA plastic plate, PET plastic plate, PS plastic plate, PA plastic plate, ABS plastic plate, corrosion resistant plate, metallic plate.
Described substrate surface can be spray, plating or print surface, silicon oxide layer deposited, fluoride layer successively on described spray, plating or print surface.
The preparation method of above-mentioned anti-fingerprint film of the present invention, its preferably detailed description of the invention be:
Comprise the steps:
First, choose processed product as base material, substrate surface cleaned, dedusting;
Then, magnetron sputtering coater is utilized to carry out Ion Cleaning successively, be coated with silicon oxide layer, dedusting;
Afterwards, the depositing fluorinated nitride layer of vacuum evaporating coating machine is utilized.
Described cleaning comprises:
With alcohol, non-dust cloth, substrate surface is cleaned.
Described dedusting comprises:
Carry out dedusting with electrostatic precipitation rifle, the voltage of the electrostatic generator that described electrostatic precipitation rifle is used is 7KV.
Described Ion Cleaning, be coated with silicon oxide layer and comprise:
In magnetron sputtering coater, vacuum is evacuated to 7 × 10
-3more than Pa, open grid bias power supply, be filled with argon gas and form plasma, Ion Cleaning is carried out to base material, bias mains voltage setting 500V-700V, grid bias power supply dutycycle setting 60%-70%, argon flow amount is set as 450Sccm-550Sccm, scavenging period is set as 5min-10min, and vacuum is down to 7 × 10
-1pa;
Close grid bias power supply after Ion Cleaning, stop being filled with argon gas, vacuum is extracted into 6.5 × 10
-3more than Pa, be filled with argon gas and oxygen, open the intermediate frequency power supply of silicon target, carry out silicon oxide film to be coated with, intermediate frequency power supply current settings 10A-12A, argon flow amount is set as 150Sccm-180Sccm, and oxygen flow is set as 10Sccm-12Sccm, the plated film time is set as 2min-3min, and vacuum is down to 2.3 × 10
-1pa;
Described Ion Cleaning, be coated with in silicon oxide layer process, the speed setting of product pivoted frame is 3.1rpm.
Described depositing fluorinated nitride layer comprises:
In vacuum evaporating coating machine, vacuum is evacuated to 3.5 × 10
-3more than Pa, starts at the depositing fluorinated thing of substrate surface, controls source temperature 300 DEG C, vaporization voltage setting 1.5V, evaporation time setting 300S, the speed setting 50rpm of product pivoted frame.
The described silicon target be coated with in silicon oxide layer process adopts twin polycrystalline silicon target, the basket source of tungsten filament that the evaporation source in described depositing fluorinated nitride layer process adopts.
The pumping high vacuum equipment of described vacuum evaporating coating machine and magnetron sputtering coater all adopts oily diffusion vacuum pump and cryogenic trapping pump.
Anti-fingerprint film of the present invention and preparation method thereof, can make product appearance keep clean, makes the dirty very easily wiped clean such as fingerprint, strengthen product surface hardness.
Specific embodiment:
First deposit one deck silica at substrate surface, then deposit one deck fluoride, film thickness is 15-35nm.
Wherein, described silica is Si
xo
y, fluoride is the mixture of three kinds of fluoro-based polymers.Base material can be the various plastic plate such as PC, PMMA, PET, PS, PA, ABS, also can be various corrosion resistant plate, metallic plate etc., and base material can be the product that spray, plating, printing etc. process.
The preparation method of anti-fingerprint film, comprises the steps:
A), choose processed product as base material, with alcohol, non-dust cloth, substrate surface is cleaned.
B), by product group on Special tooling clamp, then hang on frock bar.
C), by the frock bar overworking base material be placed on and move on work car, move in dust removal cabinet, carry out dedusting with special electrostatic precipitation rifle.
D), frock bar complete for dedusting is hung on the chassis of magnetron sputtering coater, first insert lower opening, then hang up hole.
E), rotate chassis, confirm that frock bar can not drop or scratch target surface, shuts coating machine gate, and locked.
F), according to magnetron sputtering coater operational procedure open various vavuum pump successively, vacuumize.
G), 7 × 10 are evacuated in vacuum
-3grating valve is closed during more than Pa, open chassis pivoted frame switch, open grid bias power supply, be filled with argon gas and form plasma, Ion Cleaning is carried out to base material, speed setting 3.1rpm, bias mains voltage setting 700V, grid bias power supply dutycycle setting 70%, argon flow amount is set as 450Sccm, scavenging period is set as 10min, and vacuum is down to 7 × 10
-1pa.
H), close grid bias power supply after Ion Cleaning, stop being filled with argon gas, open grating valve, treat that vacuum is extracted into 6.5 × 10
-3during more than Pa, close grating valve, open chassis pivoted frame switch, be filled with argon gas and oxygen, open the intermediate frequency power supply of silicon target, silicon oxide film is coated with to base material, speed setting 3.1rpm, intermediate frequency power supply current settings 12A, argon flow amount is set as 150Sccm, oxygen flow is set as 12Sccm, and the plated film time is set as 3min, and vacuum is down to 2.3 × 10
- 1pa.
I), various pump valve is closed successively according to magnetron sputtering coater operational procedure, venting enabling taking-up product after plated film.
J), by the base material having plated silica be suspended on vacuum evaporating coating machine chassis, carry out dedusting with special electrostatic precipitation rifle.
K), rotate chassis, confirm that frock bar can not drop, shut coating machine gate, start semi-automatic program, coating machine starts automatic vacuum.
L), 3.5 × 10 are evacuated in vacuum
-3during more than Pa, point drives semi-automatic plated film button, starts plated film, and setting evaporation conditions, controls source temperature 300 DEG C, at the depositing fluorinated thing of substrate surface, and wherein vaporization voltage setting 1.5V, evaporation time setting 300S, speed setting 50.
M), after plated film, coating machine cuts out various pump valve, venting enabling automatically successively.
Wherein, step h) in silicon target adopt twin polycrystalline silicon target.
Wherein, step l) in evaporation source adopt be the basket source of tungsten filament.
Wherein, step c) and step j) in electrostatic precipitation rifle electrostatic generator voltage used be 7KV.
Wherein, vacuum evaporating coating machine and magnetron sputtering coater pumping high vacuum equipment all adopt oily diffusion vacuum pump and cryogenic trapping pump.
Wherein, the thickness of every layer film is all regulate the plated film time to control.
The excellent characteristic of the film that the present invention produces is:
1., thicknesses of layers at tens ran, color is completely transparent, has good optical property, transparent at visible ray, infrared region, does not affect the penetrating of light completely; 2., at glass, metal, plastic cement, coating, coating surface good firmness and wearability is had, can scratch-resistant, the corrosion of the various washing agent of ability, organic solvent, highly basic, weak acid, sweat, prevents film surface variable color because of pollution; 3., rete has low-friction coefficient, is greater than 110 degree, makes surface have extremely strong hydrophobic, hydrophobic, waterproof effect, have significant lotus leaf effect with the contact angle of water.Foreign material are not easily bonded at subordinate list face, increase waterproof, antifog, dust-proof, anti-fingerprint, the function such as grease proofing, anti-pollution; 4., do not affect the work of capacitance plate completely, can not interference effect be produced; 5., coating containing heavy metal silver, lead, cadmium, mercury, arsenic composition, does not outwardly discharge noxious material, totally nontoxic.
The excellent characteristic of production method of the present invention is:
Being coated with for fluoride films, most of producer all adopts electron gun to add the evaporation equipment of crucible, and this equipment has the shortcoming that output is little, rete is uneven, my company adopts electric resistor heating type evaporation coating machine to be coated with the shortcoming that fluoride films exactly compensate for electron gun device, this equipment yield is large, and speed is fast, and evaporation source is many, can be complementary up and down, uniformity is good, and technique is simple, easy to operate, whole stove product thicknesses of layers is coated with very even, is applicable to producing in enormous quantities.
Product appearance and performance:
Unchanged before and after product colour plated film.
It is 0 grade with the adhesive force of cross-cut tester test products.
By the wearability of paper tape Friction tester test products, 3000 the product retes that rub do not fall film, non-variable color.
Product is rubber friction and the equal OK of alcohol friction testing.
Product does high temperature, high humidity tries equal OK.
Product cold-hot impact test OK.
Product resistance to sweat test OK.
Product oil resistant test OK.
Product is hardness test OK.
Wherein, rubber friction test is: by the power of 9.8N, rubber is pressed in product surface, stroke 30mm, rubs 2000 times with the speed of 30 times per minute, it is OK that product does not fall film.
Wherein, alcohol friction test is: by the power of 4.8N, cloth moistening for absolute alcohol is pressed in product surface, and rub 100 times, it is OK that product does not fall film.
Wherein, hot test is: lower 48 hours of environment product being placed on temperature 80 DEG C, humidity 10%, product appearance is unchanged is OK.
Wherein, high wet test is: lower 48 hours of environment product being placed on temperature 60 C, humidity 90%, product appearance is unchanged is OK.
Wherein, cold-hot impact test is: lower 0.5 hour of environment product being placed on temperature-40 DEG C, more lower 0.5 hour of environment product being placed on temperature 70 C, and do 10 circulations altogether, product appearance is unchanged is OK.
Wherein, the test of resistance to sweat is: lower 0.5 hour of the environment product coating synthetic perspiration being placed on temperature 50 C, humidity 90%, then product is placed on lower 0.5 hour of the environment of temperature 35 DEG C, humidity 90%, and do 100 circulations altogether, product appearance is unchanged is OK.
Wherein, oil resistant test is: lower 12 hours of the environment product coating edible oil being placed on temperature 70 C, humidity 90%, and then do hundred lattice tests, not falling film is OK.
Wherein, hardness measuring method is: be that miter angle draws 1cm length by the 2H pencil of Mitsubishi with the power of 9.8N and product surface, and draw 5 times, 2 no markings are OK.
Preparation method of the present invention realizes low-temperature and high-speed deposition by novel PVD technology and evaporation coating technique at product surface, obtains anti-fingerprint film.Compared with other technology, this technology is widely used, and applicability is strong, and base material can be plastic cement, also can be glass, stainless steel, pottery, other metal or nonmetal plate.This technology is without the need to heating, and can carry out under normal temperature, be real low-temperature and high-speed.The uniformity of film and homogeney excellence, completely transparent, do not affect product background color, and this technical matters process is simple, easily operates, with low cost, nuisanceless, pure environmental protection.
The above; be only the present invention's preferably detailed description of the invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (7)
1. a preparation method for anti-fingerprint film, is characterized in that:
Described anti-fingerprint film comprises base material, and described substrate surface deposits silicon oxide layer, fluoride layer successively, and the gross thickness of described silicon oxide layer and fluoride layer is 15-35nm;
The general formula of described silica is Si
xo
y, described fluoride is the mixture of multiple fluoro-based polymers;
Described base material be following any one: PC plastic plate, PMMA plastic plate, PET plastic plate, PS plastic plate, PA plastic plate, ABS plastic plate, metallic plate;
Described substrate surface is provided with spray, plating or print surface, silicon oxide layer deposited, fluoride layer successively on described spray, plating or print surface;
Preparation method comprises the steps:
First, choose processed product as base material, substrate surface cleaned, dedusting;
Then, magnetron sputtering coater is utilized to carry out Ion Cleaning successively, be coated with silicon oxide layer, dedusting;
Afterwards, the depositing fluorinated nitride layer of vacuum evaporating coating machine is utilized;
Described Ion Cleaning, be coated with silicon oxide layer and comprise:
In magnetron sputtering coater, vacuum is evacuated to 7 × 10
-3more than Pa, open grid bias power supply, be filled with argon gas and form plasma, Ion Cleaning is carried out to base material, bias mains voltage setting 500V-700V, grid bias power supply dutycycle setting 60%-70%, argon flow amount is set as 450Sccm-550Sccm, scavenging period is set as 5min-10min, and vacuum is down to 7 × 10
-1pa;
Close grid bias power supply after Ion Cleaning, stop being filled with argon gas, vacuum is extracted into 6.5 × 10
-3more than Pa, be filled with argon gas and oxygen, open the intermediate frequency power supply of silicon target, carry out silicon oxide film to be coated with, intermediate frequency power supply current settings 10A-12A, argon flow amount is set as 150Sccm-180Sccm, and oxygen flow is set as 10Sccm-12Sccm, the plated film time is set as 2min-3min, and vacuum is down to 2.3 × 10
-1pa;
Described Ion Cleaning, be coated with in silicon oxide layer process, the speed setting of product pivoted frame is 3.1rpm.
2. the preparation method of anti-fingerprint film according to claim 1, is characterized in that, described metallic plate is corrosion resistant plate.
3. the preparation method of anti-fingerprint film according to claim 1, is characterized in that, described cleaning comprises:
With alcohol, non-dust cloth, substrate surface is cleaned.
4. the preparation method of anti-fingerprint film according to claim 1, is characterized in that, described dedusting comprises:
Carry out dedusting with electrostatic precipitation rifle, the voltage of the electrostatic generator that described electrostatic precipitation rifle is used is 7KV.
5. the preparation method of anti-fingerprint film according to claim 1, is characterized in that, described depositing fluorinated nitride layer comprises:
In vacuum evaporating coating machine, vacuum is evacuated to 3.5 × 10
-3more than Pa, starts at the depositing fluorinated thing of substrate surface, controls source temperature 300 DEG C, vaporization voltage setting 1.5V, evaporation time setting 300S, the speed setting 50rpm of product pivoted frame.
6. the preparation method of anti-fingerprint film according to claim 5, is characterized in that, described in the silicon target be coated with in silicon oxide layer process adopt twin polycrystalline silicon target, evaporation source in described depositing fluorinated nitride layer process adopts the basket source of tungsten filament.
7. the preparation method of anti-fingerprint film according to claim 6, is characterized in that, the pumping high vacuum equipment of described vacuum evaporating coating machine and magnetron sputtering coater all adopts oily diffusion vacuum pump and cryogenic trapping pump.
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