CN103433491B - Silicon carbide IGBT (Insulated Gate Bipolar Transistor) substrate framework vacuum pressure aluminizing device and double-sided aluminum coating method - Google Patents
Silicon carbide IGBT (Insulated Gate Bipolar Transistor) substrate framework vacuum pressure aluminizing device and double-sided aluminum coating method Download PDFInfo
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Abstract
The invention discloses a silicon carbide IGBT (Insulated Gate Bipolar Transistor) substrate framework vacuum pressure aluminizing device and a double-sided aluminum coating method, the device comprises a ceramic crucible arranged in a vacuum pressure infiltration furnace, a holed graphite plate arranged at the bottom of the ceramic crucible, and a plurality of silicon carbide IGBT substrate frameworks and a plurality of stainless steel and ceramic composite plates arranged in the ceramic crucible, wherein one of the stainless steel and ceramic composite plates, which is parallel to the silicon carbide IGBT substrate frameworks, is arranged between every two adjacent silicon carbide IGBT substrate frameworks; the side wall of the ceramic crucible is provided with clamping slots for fixing the silicon carbide IGBT substrate frameworks or stainless steel and ceramic composite plates; and the ceramic crucible is internally provided with cast aluminum alloy with the silicon mass percentage of larger than 13%. The technical problem for uniformly coating aluminum alloy on both sides of a silicon carbide IGBT substrate is solved by using the silicon carbide IGBT substrate framework vacuum pressure aluminizing device, the ceramic crucible can be repeatedly used, and the device is low in cost, high in yield, good in quality and suitable for mass production.
Description
Technical field
The present invention relates to a kind of silicon carbide IGBT substrate framework vacuum pressure aluminising device and the two-sided process covering aluminium alloy of aluminium silicon carbide IGBT substrate.
Background technology
To have thermal conductivity high because of it for aluminium silicon carbide IGBT substrate, and the features such as thermal coefficient of expansion is low, have been widely used in the heat radiation of high-power integrated circuit, Phased Array Radar Antenna, bullet train current-variable controller.
Aluminium silicon carbide IGBT substrate needs installing hole and screw, require that solder side is plane, another side needs sphere.It is very difficult that aluminium silicon carbide IGBT substrate is carried out machining.Chinese patent CN201110340918.7 openly know clearly aluminum silicon carbide composite material IGBT substrate preparation and inlay the method for aluminium alloy, avoid punching or tapping on aluminum silicon carbide composite material substrate, but the aluminium alloy inlayed at aluminum silicon carbide composite material substrate carries out punching or tapping, improve production efficiency.In order to the another side realizing aluminium silicon carbide IGBT substrate is sphere, if carry out machining in aluminium silicon carbide IGBT substrate, than punching or tapping also difficult.Certainly, if can realize two-sidedly in aluminium silicon carbide IGBT substrate being covered with aluminium alloy, then on aluminium alloy, carry out sphere processing, then can avoid the difficulty in machining.But, in vacuum pressure aluminising process, adopt the aluminising frock that stainless steel makes, distortion is easy to after silicon carbide IGBT substrate framework aluminising, cause that aluminium silicon carbide IGBT substrate is two-sided covers the in uneven thickness of aluminium alloy, add man-hour carrying out sphere, aluminium silicon carbide material is easy to expose, and does not reach the two-sided object covering aluminium alloy.Chinese patent CN200780014043.3 discloses " heat radiation part of aluminum/silicon carbide complex and this complex of use ", this patent upper aluminium oxide is first padded on the two sides of silicon carbide IGBT substrate framework or silica is the fiber cloth of main component, demoulding steel plate is pressed from both sides again in the outside of this fiber cloth, cross layered, clamp at outermost layer two blocks of steel plates and tighten with screw rod.The key of this patent is that aluminium oxide or silica are that the fiber cloth of main component is clipped in silicon carbide IGBT substrate framework, by adjusting the number of plies of fiber cloth, reaches the object of the thickness of aluminum alloy in adjustment aluminium silicon carbide IGBT substrate.The present inventor verifies this patent, alumina fibre is adopted to be clipped in silicon carbide IGBT substrate framework, clamp with the corrosion resistant plate brushing releasing agent again, tighten with screw rod, adopt the method for vacuum pressure aluminising, can realize that aluminium silicon carbide IGBT substrate is two-sided covers aluminium alloy, but, this aluminium alloy layer has a large amount of minute apertures, after chemical plating nickel-phosphorus alloy, still visible minute aperture, does not reach application requirement.
Summary of the invention
In order to overcome that existing silicon carbide IGBT substrate framework covers that aluminium exists to cover aluminium uneven, aluminium alloy layer exists pore affects the deficiencies such as quality, the present invention aims to provide a kind of silicon carbide IGBT substrate framework vacuum pressure aluminising device and two-sidedly covers aluminium method, this aluminising device and two-sided to cover aluminium method technique simple, cost is low, and quality is good, applied widely.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of silicon carbide IGBT substrate framework vacuum pressure aluminising device; Its design feature is, comprises the ceramic crucible be placed in vacuum pressure infiltration stove, is arranged on the graphite cake with holes bottom ceramic crucible; Be contained in the polylith silicon carbide IGBT substrate framework in ceramic crucible and polylith stainless ceramic compoboard; One block of described stainless ceramic compoboard be arranged in parallel with it is provided with between adjacent two pieces of silicon carbide IGBT substrate framework; The sidewall of described ceramic crucible has the draw-in groove for fixing described silicon carbide IGBT substrate framework or stainless ceramic compoboard; Described ceramic crucible is greater than the Birmasil of 13% built with siliceous mass fraction.
Be below the technical scheme of further improvement of the present invention:
The volume fraction of described silicon carbide IGBT substrate framework is 65% ~ 75%.
As a kind of concrete version, described stainless ceramic compoboard comprises ceramic wafer, is positioned at the corrosion resistant plate of ceramic wafer both sides; Wherein ceramic wafer thickness is 3mm ~ 3.2mm, and the corrosion resistant plate thickness of both sides is 0.5mm ~ 1mm.
The conveniently demoulding, described ceramic crucible inner surface and stainless ceramic compoboard outer surface are equipped with releasing agent layer.The releasing agent formula of described releasing agent layer is zinc oxide 150g/L ~ 200g/L, waterglass 150mL/L ~ 200mL/L, and remaining is deionized water.
In order to ensure the uniformity covering aluminium, the distance between adjacent two draw-in grooves is 1mm ~ 2.5mm.
The conveniently demoulding, described draw-in groove has gradient from its root to teeth portion.
Further, present invention also offers and a kind ofly utilize above-mentioned silicon carbide IGBT substrate framework vacuum pressure aluminising device to carry out the two-sided method covering aluminium to silicon carbide IGBT substrate framework, this two-sided aluminium method of covering comprises the steps:
1) bottom ceramic crucible, place graphite cake with holes, and silicon carbide IGBT substrate framework and stainless ceramic compoboard are inserted in the respective card slot of ceramic crucible;
2) ceramic crucible put into by the Birmasil siliceous mass fraction being greater than 13%;
3) close vacuum pressure infiltration stove and vacuumize, until vacuum is below 20Pa;
4) heating, vacuum Pressure Infiltration stove is to 750 DEG C ~ 850 DEG C, insulation 80min ~ 100min; Now, the aluminium alloy liquid level of fusing exceeds at least 20mm than silicon carbide IGBT substrate framework;
5) in vacuum pressure infiltration stove, being filled with protective gas to furnace pressure is 7MPa ~ 8MPa, pressurize 15min ~ 25min;
6) discharge the protective gas in stove, after cooling, take out aluminium silicon carbide IGBT substrate framework blank.
Above structure, a kind of carborundum IGBT skeleton vacuum pressure aluminising device, comprises the ceramic crucible with draw-in groove; Be contained in the graphite cake with holes of the bottom of ceramic crucible; Volume fraction is the carborundum IGBT skeleton of 65%; Corrosion resistant plate/ceramic wafer/corrosion resistant plate combination; Aluminium alloy is the Birmasil that silicon content is greater than 13%.Thus, 1 piece of porose graphite cake is put in the bottom with the ceramic crucible of draw-in groove, silicon carbide IGBT substrate framework and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination is intersected in the draw-in groove loading ceramic crucible respectively, composition silicon carbide IGBT substrate framework aluminising device.
Ceramic crucible sinters and forms after isostatic compaction, and its material is the mixture of aluminium oxide or aluminium oxide and silica.
Ceramic crucible appearance and size length × wide × height is (160 ~ 210) mm × 100mm × (200 ~ 300) mm, and wall thickness is 10mm, and bottom is thick is 20mm.
Draw-in groove in ceramic crucible: the length of draw-in groove × wide is (3mm ~ 5mm) × (5.0mm ~ 5.2mm), interval 2 mm.
Ceramic crucible inner brush zinc oxide and waterglass releasing agent, wherein releasing agent formula is zinc oxide 150g/L ~ 200g/L, waterglass 150mL/L ~ 200mL/L, and remaining is deionized water.
Corrosion resistant plate/ceramic wafer/corrosion resistant plate combination: stainless steel thickness of slab 1mm, surface brush zinc oxide and waterglass releasing agent, wherein releasing agent formula is zinc oxide 150g/L ~ 200g/L, waterglass 150mL/L ~ 200mL/L, and remaining is deionized water.Pottery thickness of slab 3.0mm ~ 3.2mm, its material is the mixture of aluminium oxide or aluminium oxide and silica.1 draw-in groove of ceramic crucible is put in 1 corrosion resistant plate/ceramic wafer/corrosion resistant plate combination.
In ceramic crucible, first 1 carborundum IGBT skeleton is loaded the 1st draw-in groove, again by 1 corrosion resistant plate/ceramic wafer/corrosion resistant plate combination loading the 2nd draw-in groove, again 1 carborundum IGBT skeleton is loaded the 3rd draw-in groove, by this cross method dress carborundum IGBT skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination.The Birmasil appropriate siliceous mass fraction being greater than 13% is placed in silicon carbide IGBT substrate framework vacuum pressure aluminising device, again silicon carbide IGBT substrate framework vacuum pressure aluminising device is put into vacuum pressure infiltration stove, close vacuum drying oven top plug, start to vacuumize, when vacuum is below 20Pa, start heating, when temperature reaches 750 DEG C ~ 850 DEG C, insulation 80min ~ 100 min, now, aluminium alloy liquid level exceeds 20mm than silicon carbide IGBT substrate framework top; Then in vacuum pressure impregnation stove, add nitrogen, its pressure is 7MPa ~ 8MPa, pressurize 15min ~ 25min; After pressurize terminates, when bleeding off nitrogen and naturally cool to below 50 DEG C, take out carborundum IGBT skeleton aluminising device, more every part aluminium silicon carbide IGBT substrate blank is taken out.
Compared with prior art, the invention has the beneficial effects as follows: present invention process is simple, and ceramic crucible is reusable, and cost is lower than graphite crucible, applied widely, can realize the suitability for industrialized production of aluminium silicon carbide IGBT substrate.
The aluminium alloy thickness that aluminium silicon carbide IGBT substrate obtains is 1mm ~ 2mm, the deflection of aluminum silicon carbide composite material is less than 0.11mm, aluminium alloy layer adopts the method for machining easily realize welding plane and there is aluminium alloy, be easily processed into sphere at another side.There is the features such as smooth, even, fine and close, by observation by light microscope, without the phenomenon such as fine holes and crackle at the two-sided aluminium alloy covered of aluminium silicon carbide IGBT substrate; Do thermal shock test to this product: from 200 DEG C of insulations 1 hour, take out and put into the running water of room temperature, after reciprocal 10 times, by observation by light microscope, aluminium silicon carbide IGBT substrate and aluminium alloy layer are without peeling off and the phenomenon such as crackle; In aluminium silicon carbide IGBT substrate, sampling detects: when 20 DEG C ~ 25 DEG C, thermal conductivity is 185W/mK; When 25 DEG C → 150 DEG C, thermal coefficient of expansion is 7.1 × 10
-6/ K; When 20 DEG C ~ 25 DEG C, bending strength 423MPa.
The invention solves the technical barrier that aluminium silicon carbide IGBT substrate double-faced uniform covers aluminium alloy, ceramic crucible is reusable, and cost is low, and output is high, and quality is good, is suitable for batch production.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Accompanying drawing explanation
Fig. 1 is the sphere contour mapping datagram (central point: Z value 0.3936mm, eccentric X value 49.57%, eccentric Y value 54.24%) of aluminium silicon carbide IGBT substrate framework of the present invention processing;
Fig. 2 is ceramic crucible structural representation of the present invention;
Fig. 3 is the combination schematic diagram of corrosion resistant plate/ceramic wafer/corrosion resistant plate of the present invention.
In the drawings
1-ceramic crucible; 2,3,4,5-draw-in groove; 6,8-corrosion resistant plate; 7-ceramic wafer.
Detailed description of the invention
embodiment 1
Four unit aluminium silicon carbide IGBT substrate appearance and sizes are 127mm × 137mm × 5mm, two-sidedly cover aluminium alloy, and welding plane thickness of aluminum alloy 0.03mm, another side is sphere, and thickness of aluminum alloy is minimum is 0.03mm, and peak is 0.390mm.Its step is as follows:
1, ceramic crucible design
(1) as shown in Figure 2, ceramic crucible 1 sinters and forms after isostatic compaction, and its material is the mixture of aluminium oxide or aluminium oxide and silica.
(2) ceramic crucible appearance and size length × wide × height is 160mm × 100mm × 200mm, and wall thickness is 10mm, and bottom is thick is 20mm.
(3) draw-in groove in ceramic crucible, as shown in Figure 2, draw-in groove 2 is long × wide is 5mm × 5.2mm, and interval 2 mm, this draw-in groove has certain gradient from its root to teeth portion, be convenient to the demoulding.
2, brush releasing agent
(1) ceramic crucible is heated to 200 DEG C, takes out after insulation 30min, brush zinc oxide and waterglass releasing agent therein;
(2) this crucible is heated 200 DEG C again, take out again after insulation 30min, then brush zinc oxide and waterglass releasing agent therein;
(3) this crucible is heated 200 DEG C again, after insulation 30min, naturally cool.
Wherein releasing agent formula is zinc oxide 150g/L, waterglass 150mL/L, and remaining is deionized water.
3, corrosion resistant plate/ceramic wafer/corrosion resistant plate combination
(1) corrosion resistant plate 131mm × 141mm × 1mm, wherein stainless steel thickness of slab is 1mm, and as stated above at corrosion resistant plate surface brush zinc oxide and waterglass releasing agent, wherein releasing agent formula is zinc oxide 150g/L, waterglass 150mL/L, and remaining is deionized water.
(2) ceramic wafer 131mm × 141mm × 1mm, wherein ceramic thickness of slab 3.0mm, its material is the mixture of aluminium oxide or aluminium oxide and silica.
(3) 1 corrosion resistant plate/ceramic wafer/corrosion resistant plate combinations as shown in Figure 3.
4, grinding carborundum IGBT skeleton plane
Select volume fraction be 65% carborundum IGBT skeleton, its appearance and size is 131mm × 141mm × 5.5mm, and wearing into appearance and size is 131mm × 141mm × 4.8mm, cleans up, then heats 200 DEG C, insulation 30min after naturally cooling.
5, carborundum IGBT skeleton vacuum pressure aluminising device is formed
As shown in Figure 2, in ceramic crucible 1, by porose have graphite cake keep flat bottom crucible 1 with draw-in groove tight fit; Draw-in groove 2(the 1st draw-in groove by the 1st carborundum IGBT skeleton load map 2), again by draw-in groove 3(the 2nd draw-in groove in the 1st corrosion resistant plate/ceramic wafer/corrosion resistant plate combination load map 2), again the 2nd carborundum IGBT skeleton is loaded the 3rd draw-in groove, by this cross method dress carborundum IGBT skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination, until the draw-in groove 4 in the 5th corrosion resistant plate/ceramic wafer/corrosion resistant plate combination load map 2, by draw-in groove 5 in the 6th carborundum IGBT skeleton load map 2.This device has 6 carborundum IGBT skeletons and 5 corrosion resistant plate/ceramic wafer/corrosion resistant plate combinations.
6, by appropriate silicon content be 13% Birmasil be placed in silicon carbide IGBT substrate framework vacuum pressure aluminising device, again silicon carbide IGBT substrate framework vacuum pressure aluminising device is put into vacuum pressure infiltration stove, close vacuum drying oven top plug, start to vacuumize, when vacuum is 19Pa, start heating, when temperature reaches 750 DEG C, insulation 80min, now, aluminium alloy liquid level exceeds 20mm than silicon carbide IGBT substrate framework top; Then in vacuum pressure impregnation stove, add nitrogen, its pressure is 7.5MPa, pressurize 15min; After pressurize terminates, when bleeding off nitrogen and naturally cool to below 50 DEG C, take out carborundum IGBT skeleton aluminising device, more every part aluminium silicon carbide IGBT substrate blank is taken out.
7, with milling machine, the irregular aluminium alloy of single-piece aluminium silicon carbide IGBT substrate blank surface is processed smooth.
8,127mm × 137mm is become with the blank Linear cut that appearance and size is 131mm × 141mm by wire cutting machine.
9, adopt surface grinding machine by the blank mill welding plane through 8 process, until aluminium alloy layer is 0.03mm.
10, adopt numerically controlled lathe by the blank forming sphere through 9 process, aluminium alloy layer minimum point is 0.03mm, and peak is 0.390mm.
The sphere contour mapping data that the aluminium alloy layer of aluminium silicon carbide IGBT substrate is processed are (central point: Z value 0.3936mm, eccentric X value 49.57%, eccentric Y value 54.24%) as shown in Figure 1.
The aluminium alloy layer effective thickness that the present embodiment obtains in aluminium silicon carbide IGBT substrate is 1.5mm, the deflection of aluminum silicon carbide composite material is less than 0.11mm, aluminium alloy layer adopts the method for machining achieve and weld the aluminium alloy layer that plane has 0.03mm, sphere has been processed at another side, global minima has the aluminium alloy layer of 0.03mm, peak 0.390mm.There is the features such as smooth, even, fine and close, by observation by light microscope, without the phenomenon such as fine holes and crackle at the two-sided aluminium alloy layer covered of aluminium silicon carbide IGBT substrate; Do thermal shock test to this product: from 200 DEG C of insulations 1 hour, take out and put into the running water of room temperature, after reciprocal 10 times, by observation by light microscope, aluminium silicon carbide IGBT substrate and aluminium alloy layer are without peeling off and the phenomenon such as crackle; In aluminium silicon carbide IGBT substrate, sampling detects: when 20 DEG C ~ 25 DEG C, thermal conductivity is 185W/mK; When 25 DEG C → 150 DEG C, thermal coefficient of expansion is 7.1 × 10
-6/ K; When 20 DEG C ~ 25 DEG C, bending strength 423MPa.The sphere contour mapping data that the aluminium alloy layer of aluminium silicon carbide IGBT substrate is processed are (central point: Z value 0.3936mm, eccentric X value 49.57%, eccentric Y value 54.24%) as shown in Figure 1.
embodiment 2
Six unit aluminium silicon carbide IGBT substrate appearance and sizes are 187mm × 137mm × 5mm, two-sidedly cover aluminium alloy, and welding plane thickness of aluminum alloy 0.03mm, another side is sphere, and thickness of aluminum alloy is minimum is 0.03mm, and peak is 0.390mm.Its step is as follows:
1, ceramic crucible design
(1) as shown in Figure 2, ceramic crucible 1 sinters and forms after isostatic compaction, and its material is the mixture of aluminium oxide or aluminium oxide and silica.
(2) ceramic crucible appearance and size length × wide × height is 210mm × 100mm × 300mm, and wall thickness is 10mm, and bottom is thick is 20mm.
(3) draw-in groove in ceramic crucible, as shown in Figure 2, draw-in groove 2 is long × wide is 5mm × 5.2mm, and interval 2 mm, this draw-in groove has certain gradient from root to teeth portion, is convenient to the demoulding.
2, brush releasing agent
(1) ceramic crucible is heated to 200 DEG C, takes out after insulation 30min, brush zinc oxide and waterglass releasing agent therein;
(2) this crucible is heated 200 DEG C again, take out again after insulation 30min, then brush zinc oxide and waterglass releasing agent therein;
(3) this crucible is heated 200 DEG C again, after insulation 30min, naturally cool.
Wherein releasing agent formula is zinc oxide 200g/L, waterglass 200mL/L, and remaining is deionized water.
3, corrosion resistant plate/ceramic wafer/corrosion resistant plate combination
(1) corrosion resistant plate 191mm × 141mm × 1mm, wherein stainless steel thickness of slab is 1mm, and as stated above at corrosion resistant plate surface brush zinc oxide and waterglass releasing agent, wherein releasing agent formula is zinc oxide 200g/L, waterglass 200mL/L, and remaining is deionized water.
(2) ceramic wafer 191mm × 141mm × 1mm, wherein ceramic thickness of slab 3.2mm, its material is the mixture of aluminium oxide or aluminium oxide and silica.
(3) 1 corrosion resistant plate/ceramic wafer/corrosion resistant plate combinations as shown in Figure 3.
4, grinding carborundum IGBT skeleton plane
Select volume fraction be 75% carborundum IGBT skeleton, its appearance and size is 191mm × 141mm × 5.5mm, and wearing into appearance and size is 191mm × 141mm × 4.8mm, cleans up, then heats 200 DEG C, insulation 30min after naturally cooling.
5, carborundum IGBT skeleton vacuum pressure aluminising device is formed
As shown in Figure 2, in ceramic crucible 1, by porose have graphite cake keep flat bottom crucible 1 with draw-in groove tight fit; Draw-in groove 2(the 1st draw-in groove by the 1st carborundum IGBT skeleton load map 2), again by draw-in groove 3(the 2nd draw-in groove in the 1st corrosion resistant plate/ceramic wafer/corrosion resistant plate combination load map 2), again the 2nd carborundum IGBT skeleton is loaded the 3rd draw-in groove, by this cross method dress carborundum IGBT skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination, until the draw-in groove 4 in the 5th corrosion resistant plate/ceramic wafer/corrosion resistant plate combination load map 2, by the draw-in groove 5 in the 6th carborundum IGBT skeleton load map 2.This device has 6 carborundum IGBT skeletons and 5 corrosion resistant plate/ceramic wafer/corrosion resistant plate combinations.
6, the Birmasil being 13.5% by appropriate siliceous mass fraction is placed in silicon carbide IGBT substrate framework vacuum pressure aluminising device, again silicon carbide IGBT substrate framework vacuum pressure aluminising device is put into vacuum pressure infiltration stove, close vacuum drying oven top plug, start to vacuumize, when vacuum is 17Pa, start heating, when temperature reaches 850 DEG C, insulation 100min, now, aluminium alloy liquid level exceeds 20mm than silicon carbide IGBT substrate framework top; Then in vacuum pressure impregnation stove, add nitrogen, its pressure is 8.0MPa, pressurize 25min; After pressurize terminates, when bleeding off nitrogen and naturally cool to below 50 DEG C, take out carborundum IGBT skeleton aluminising device, more every part aluminium silicon carbide IGBT substrate blank is taken out.
7, with milling machine, the irregular aluminium alloy of single-piece aluminium silicon carbide IGBT substrate blank surface is processed smooth.
8,187mm × 137mm is become with the blank Linear cut that appearance and size is 191mm × 141mm by wire cutting machine.
9, adopt surface grinding machine by the blank mill welding plane through 8 process, until aluminium alloy layer is 0.03mm.
10, adopt numerically controlled lathe by the blank forming sphere through 9 process, aluminium alloy layer minimum point is 0.03mm, and peak is 0.390mm.
The aluminium alloy layer effective thickness that the present embodiment obtains in aluminium silicon carbide IGBT substrate is 1.6mm, the deflection of aluminum silicon carbide composite material is less than 0.13mm, aluminium alloy layer adopts the method for machining achieve and weld the aluminium alloy layer that plane has 0.03mm, sphere has been processed at another side, global minima has the aluminium alloy layer of 0.03mm, peak 0.390mm.There is the features such as smooth, even, fine and close, by observation by light microscope, without the phenomenon such as fine holes and crackle at the two-sided aluminium alloy layer covered of aluminium silicon carbide IGBT substrate; Do thermal shock test to this product: from 200 DEG C of insulations 1 hour, take out and put into the running water of room temperature, after reciprocal 10 times, by observation by light microscope, aluminium silicon carbide IGBT substrate and aluminium alloy layer are without peeling off and the phenomenon such as crackle; In aluminium silicon carbide IGBT substrate, sampling detects: when 20 DEG C ~ 25 DEG C, thermal conductivity is 180W/mK; When 25 DEG C → 150 DEG C, thermal coefficient of expansion is 7.0 × 10
-6/ K; When 20 DEG C ~ 25 DEG C, bending strength 395MPa.
The content that above-described embodiment is illustrated should be understood to these embodiments only for being illustrated more clearly in the present invention, and be not used in and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Claims (8)
1. a silicon carbide IGBT substrate framework vacuum pressure aluminising device; It is characterized in that, comprise the ceramic crucible (1) be placed in vacuum pressure infiltration stove, be arranged on the graphite cake with holes of ceramic crucible (1) bottom; Be contained in the polylith silicon carbide IGBT substrate framework in ceramic crucible (1) and polylith stainless ceramic compoboard; One block of described stainless ceramic compoboard be arranged in parallel with it is provided with between adjacent two pieces of silicon carbide IGBT substrate framework; The sidewall of described ceramic crucible (1) has the draw-in groove (2,3,4,5) for fixing described silicon carbide IGBT substrate framework or stainless ceramic compoboard; Described ceramic crucible (1) is greater than the Birmasil of 13% built with siliceous mass fraction.
2. silicon carbide IGBT substrate framework vacuum pressure aluminising device according to claim 1, is characterized in that, the volume fraction of described silicon carbide IGBT substrate framework is 65% ~ 75%.
3. silicon carbide IGBT substrate framework vacuum pressure aluminising device according to claim 1, it is characterized in that, described stainless ceramic compoboard comprises ceramic wafer (7), is positioned at the corrosion resistant plate (6,8) of ceramic wafer (7) both sides; Wherein ceramic wafer (7) thickness is 3mm ~ 3.2mm, and corrosion resistant plate (6, the 8) thickness of both sides is 0.5mm ~ 1mm.
4. silicon carbide IGBT substrate framework vacuum pressure aluminising device according to claim 1, is characterized in that, described ceramic crucible (1) inner surface and stainless ceramic compoboard outer surface are equipped with releasing agent layer.
5. silicon carbide IGBT substrate framework vacuum pressure aluminising device according to claim 1, is characterized in that, the distance between adjacent two draw-in grooves (2,3,4,5) is 1mm ~ 2.5mm.
6. silicon carbide IGBT substrate framework vacuum pressure aluminising device according to claim 4, is characterized in that, the releasing agent formula of described releasing agent layer is zinc oxide 150g/L ~ 200g/L, waterglass 150mL/L ~ 200mL/L, and all the other are deionized water.
7. according to the silicon carbide IGBT substrate framework vacuum pressure aluminising device one of claim 1-6 Suo Shu, it is characterized in that, described (2,3,4,5) draw-in groove has gradient from its root to teeth portion.
8. utilize the described silicon carbide IGBT substrate framework vacuum pressure aluminising device of one of claim 1 ~ 7 to carry out the two-sided method covering aluminium to silicon carbide IGBT substrate framework, it is characterized in that, comprise the steps:
1) place graphite cake with holes in ceramic crucible (1) bottom, and silicon carbide IGBT substrate framework and stainless ceramic compoboard are inserted in the respective card slot (2,3,4,5) of ceramic crucible;
2) ceramic crucible (1) put into by the Birmasil siliceous mass fraction being greater than 13%;
3) close vacuum pressure infiltration stove and vacuumize, until vacuum is below 20Pa;
4) heating, vacuum Pressure Infiltration stove is to 750 DEG C ~ 850 DEG C, insulation 80min ~ 100min, and now, the aluminium alloy liquid level of fusing exceeds at least 20mm than silicon carbide IGBT substrate framework;
5) in vacuum pressure infiltration stove, being filled with protective gas to furnace pressure is 7MPa ~ 8MPa, pressurize 15min ~ 25min;
6) discharge the protective gas in stove, after cooling, take out aluminium silicon carbide IGBT substrate framework blank.
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| CN104741652B (en) * | 2015-03-23 | 2017-09-12 | 合肥圣达电子科技实业公司 | A kind of hole processing method on high-volume fractional aluminum silicon carbide composite material |
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| JP3468358B2 (en) * | 1998-11-12 | 2003-11-17 | 電気化学工業株式会社 | Silicon carbide composite, method for producing the same, and heat radiation component using the same |
| JP4761157B2 (en) * | 2004-09-14 | 2011-08-31 | 電気化学工業株式会社 | Aluminum-silicon carbide composite |
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