CN103413746A - Germanium implanting method for improving service cycle of ion implanter - Google Patents
Germanium implanting method for improving service cycle of ion implanter Download PDFInfo
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- CN103413746A CN103413746A CN2013102568170A CN201310256817A CN103413746A CN 103413746 A CN103413746 A CN 103413746A CN 2013102568170 A CN2013102568170 A CN 2013102568170A CN 201310256817 A CN201310256817 A CN 201310256817A CN 103413746 A CN103413746 A CN 103413746A
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Abstract
The invention discloses a germanium implanting method for improving a service cycle of an ion implanter. The germanium implanting method comprises the steps that: a wafer is put in an ion implanting chamber, and the chamber is vacuumized; GeF4 and SiH4 gases are introduced into the ion implanting chamber; the GeF4 and SiH4 gases are subjected to decomposition, and decomposed Si +, free F and free H are discharged out of the chamber; decomposed Ge+ in the chamber is implanted into the wafer; the free F and the free H react to produce an HF gas, and the HF gas is extracted out of the chamber; and the decomposed Si + and Ge+ enter a magnetic field of a leading-out pole, the Si + is excluded since the Si+ cannot pass the magnetic field of the leading-out pole, and the Ge+ is implanted into the wafer after being deflected by the magnetic field. The method of the invention improves the traditional germanium implanting method, avoids flocks formed when ions are implanted into the chamber, reduces the corrosion of the chamber, reduces the process hazardous, and improves the service cycle of the ion implanter after the germanium is implanted into the process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of germanium method for implanting that improves the ion implantor life cycle.
Background technology
Along with the development of semiconductor fabrication, more and more higher to each technological requirement in semiconductor technology.Injection technology is one of important process in semiconductor technology, and the quality height of injection technology directly has influence on the performance of semiconductor device.In injection technology, the germanium injection technology is common ion implantation technology, and such as the germanium to super shallow junction injects, the quality that germanium injects directly has influence on the quality of the performance of super shallow junction.
Refer to Fig. 1, Fig. 1 is the schematic flow sheet of conventional germanium injection technology method, usually, carries out the method for germanium injection technology, comprising:
Step S11: wafer is put into to the Implantation chamber, chamber is vacuumized;
Step S12: pass into the germanium source in the Implantation chamber;
Step S13: in the Ge+ implantation wafer decomposed in chamber.
In above-mentioned germanium injection technology, the germanium source is generally GeF
4, in the essential element due to the Implantation cavity, contain tungsten (W), in injection technology, GeF
4Decompose and produce the F ion, these F ions easily react with W and generate WF
6Gas, W(s)+6F (g)=WF
6And WF (g),
6The gas decomposes becomes W, WF
6(g)+Heat=>W(s)+3F
2(g), these W stick on cavity, form irregular soft flocks thing, thereby affect the homogeneity of line, could normally use after causing the ion injection machine table shutdown to be cleaned and being maintained.
At present, the method that overcomes the problems referred to above is at GeF
4In add H
2, in the Implantation chamber, GeF
4Decomposite Ge ion and F ion, F ion and H
2Reaction generates HF gas, thereby has avoided reacting of F ion and W, W(s)+F (g)+H (g)=W(s)+3HF (g), then by vacuum pump by HF gas extraction Implantation chamber.Yet, well-known, H
2Flammable explosive gas, and the electronics decomposed abrim in whole chamber, be easy to like this cause blast, whole technique has been brought to great danger.
Summary of the invention
In order to overcome the problems referred to above, purpose of the present invention is intended to improve the method that traditional germanium injects, and avoids on the Implantation cavity, forming the soft flocks thing, reduces simultaneously technique danger, the life cycle of ion implantor after raising germanium injection technology.
The invention provides a kind of germanium method for implanting that improves the ion implantor life cycle, comprising:
Step S01: wafer is put into to described Implantation chamber, described chamber is vacuumized;
Step S02: pass into GeF in described Implantation chamber
4And SiH
4Gas;
Step S03: the described GeF of electron-beam excitation in described chamber
4And SiH
4Gas decomposes, the Si of decomposition
+, free F and free H be discharged from described chamber;
Step S04: the Ge decomposed in described chamber
+Be injected in described wafer;
Wherein,
Described free F and free H reaction generate HF gas, are drawn out of described chamber;
The Si decomposed in described chamber
+And Ge
+Enter the magnetic field of described extraction pole, after accelerating, described Si
+Can not be excluded by described magnetic field described Ge
+After deflecting, described magnetic field injects in described wafer.
Preferably, SiH
4With GeF
4Flow proportional be more than or equal to 1:1.
Preferably, SiH
4Flow be greater than zero, and be less than or equal to 3sccm.
Preferably, described GeF
4Flow for being greater than zero, and be less than or equal to 3sccm.
Preferably, described extraction pole magnetic field is 90 degree magnetic fields.
Preferably, described Ge
+90 degree deflections vertical the injection in described wafer occur through described extraction pole magnetic field.
Preferably, in described step S02, adopt vacuum pump to extract described free F and free H and HF gas out described chamber.
Preferably, the voltage that described ion implantor adopts is 1KV-60KV, and vacuum degree is 10
-7Pa-10
-6Pa.
The germanium method for implanting of raising ion implantor life cycle of the present invention, by improving traditional germanium method for implanting, utilize SiH
4Replace H
2, by SiH
4And GeF
4Mix, due to SiH
4And GeF
4Collision decomposites Ge in the Implantation chamber
+And Si
+, and F and the H of free state, F and H reaction generate HF gas, can avoid the F ion to react with W, W(s)+F (g)+H (g)=W(s)+3HF (g); Like this, avoided on the Implantation cavity, forming the homogeneity that the soft flocks thing affects line, reduced the corrosion to cavity, but also greatly reduced the technique degree of danger; In addition, Ge
+And Si
+After accelerate in extraction pole magnetic field, deflect, the molecular weight that is 40, Ge due to the molecular weight of Si is 72, and both differ larger, after accelerate in extraction pole magnetic field, and Si
+Acceleration and deflection angle can not be discharged to outside chamber by extraction pole it, and Ge
+Acceleration and deflection angle make it enter wafer by extraction pole, thereby guaranteed the element purity that follow-up germanium injects.
The accompanying drawing explanation
Fig. 1 is the schematic flow sheet of conventional germanium injection technology method
Fig. 2 is the structural representation of the Implantation chamber of a preferred embodiment of the present invention
Fig. 3 is the schematic flow sheet of germanium method for implanting of the raising ion implantor life cycle of a preferred embodiment of the present invention
Fig. 4 is that schematic diagram is accelerated in the extraction pole magnetic field of above-described embodiment of the present invention
Embodiment
The embodiment that embodies feature & benefits of the present invention will describe in detail in the explanation of back segment.Be understood that the present invention can have various variations on different examples, its neither departing from the scope of the present invention, and explanation wherein and be shown in the use that ought explain in essence, but not in order to limit the present invention.
Below in conjunction with accompanying drawing 2 and 3, by specific embodiment, the germanium method for implanting that the present invention improves the ion implantor life cycle is described in further detail.It should be noted that, accompanying drawing all adopts form, the non-ratio accurately of use of simplifying very much, and only in order to purpose convenient, that reach lucidly the aid illustration embodiment of the present invention.
Refer to Fig. 2, Fig. 2 is the structural representation of the Implantation chamber of a preferred embodiment of the present invention.
The Implantation chamber 100 of the present embodiment comprises:
Be positioned at the workbench 101 of chamber 100 bottoms, for placing wafer;
Be positioned at the extraction pole 102 of workbench 101 tops, for generation of magnetic field, ion accelerated and deflection;
Be positioned at the outlet 103 on the cavity of extraction pole 102 tops, connect vacuum pump, extract out for the free element by chamber and impurity;
Be positioned at the gas access 104 of chamber roof, be used to inputting gas.
Above-mentioned ion unit is only be used to explaining the present invention, and Implantation chamber of the present invention can be can carry out the chamber of Implantation arbitrarily, and the present invention is not restricted the structure of Implantation chamber.
In the germanium method for implanting of raising ion implantor life cycle of the present invention, refer to Fig. 3, Fig. 3 is the schematic flow sheet of germanium method for implanting of the raising ion implantor life cycle of a preferred embodiment of the present invention.
The germanium method for implanting of raising ion implantor life cycle of the present invention comprises:
Step S01: wafer is put into to the Implantation chamber, this chamber is vacuumized;
In the present embodiment, chamber institute suction can be 10
-7Pa-10
-6Pa is preferably 10
-6Pa, the voltage that ion implantor adopts is 1KV-60KV, is preferably 30KV.
Step S02: pass into GeF in the Implantation chamber
4And SiH
4Gas;
Concrete, in the present embodiment, SiH can be installed on ion injection machine table
4Gas negative pressure steel cylinder and GeF
4The gas negative pressure steel cylinder, SiH
4Gas and GeF
4Gas is input in the Implantation chamber by gas piping 1 and 2 respectively.Wherein, adopting the negative pressure steel cylinder is to leak for fear of gas.
Step S03: the electron-beam excitation GeF in chamber
4And SiH
4Gas decomposes, the Si of decomposition
+, free F and free H be discharged from chamber;
Step S04: the Ge decomposed in chamber
+Be injected in wafer;
Wherein,
Free F and free H reaction generate HF gas, are drawn out of chamber;
The Si decomposed in chamber
+And Ge
+Enter the magnetic field of extraction pole, after accelerating, Si
+Can not be excluded by extraction pole Ge
+After magnetic field deflects, inject in wafer;
Concrete, in the present embodiment, in the Implantation chamber, under vacuum condition, can first by electron gun, produce electron beam, then electron-beam excitation enters the GeF in chamber
4And SiH
4Gas decomposes it, SiH
4Gas decomposites Si
+With free H, GeF
4Gas decomposites Ge
+With free F, wherein, free H and free F are easy to react and generate HF gas, as formula W (s)+F (g)+H (g)=W(s)+3HF (g), so just do not have unnecessary free F to react with the W of cavity, thereby avoided the corrosion to cavity W; And, in the present embodiment, the HF gas, remaining free H and the free F that generate can utilize vacuum pump to be drawn out of chamber, thereby got rid of the pollution that germanium is injected, this is due to HF gas, remaining free H and free F neutral, can not enter extraction pole magnetic field, and three's molecular mass is very little, is easy to be extracted out chamber by vacuum pump.
In addition, in the present embodiment, can adopt extraction pole is applied to 90 degree magnetic fields, refer to Fig. 4, Fig. 4 is that schematic diagram is accelerated in the extraction pole magnetic field of above-described embodiment of the present invention, for the Si in the Implantation chamber
+And Ge
+, under the magnetic fields of extraction pole 405, accelerated, produce 90 degree deflections, because the molecular weight of Si and Ge is respectively 40 and 72, both differ larger, after accelerate in extraction pole magnetic field, Si+ acceleration and deflection angle can not be excluded by extraction pole 405 it, and Ge
+Acceleration and deflection angle it can be entered in wafer by extraction pole 405, can easily Si be excluded like this, and retain Ge, guaranteed the purity of the injection element that germanium injects; Simultaneously, in the present embodiment, owing to having adopted 90 degree magnetic fields, Ge
+90 degree deflections occur behind described extraction pole 405 magnetic fields and vertically be injected in wafer 404.As shown in Figure 4,401 is ion source, and 402 is Si
+Movement locus under magnetic fields, 403 is Ge
+Movement locus under magnetic fields, under magnetic fields, Si
+After under magnetic fields, deflecting, can not pass through extraction pole 405, and Ge
+90 degree deflections occurring by extraction pole 405 under magnetic fields and vertically is injected in wafer 404.
Here it should be noted that, arranging of each parameter in extraction pole magnetic field need meet Ge
+Can pass through extraction pole magnetic field, and other ion all can not pass through the requirement in extraction pole magnetic field, according to Ge
+Molecular weight, acceleration and deflection angle and the relation of magnetic field intensity, magnetic direction, thereby obtain the parameter such as the needed accelerating voltage in extraction pole magnetic field, such as, according to injecting degree of depth difference, accelerating voltage can be from several KeV to hundreds of KeV, even several MeV.
In the present embodiment, SiH
4Gas and GeF
4The flow proportional of gas is more than or equal to 1:1, preferably, and SiH
4Gas and GeF
4The flow proportional of gas is 1:1, can guarantee that like this H and the F that dissociate just react, and not have unnecessary F to react with the W of cavity, if SiH
4Gas and GeF
4The ratio of gas is greater than 1:1, that is to say SiH
4Gas compares GeF
4The content of gas is many, and so, H can consume F, and remaining H and Si ion can accelerate to discharge chamber by extraction pole.In the present embodiment, SiH
4The flow of gas is greater than zero, and is less than or equal to 3sccm; GeF
4The flow of gas is greater than zero, and is less than or equal to 3sccm; Preferably, SiH
4The flow of gas is 3sccm, GeF
4The flow of gas is 3sccm.
It should be noted that, in above-mentioned whole technique, pressure and voltage that ion injection machine table adopts all do not change, and for example pressure remains on 10
-6Pa, voltage remains 30KV.
The germanium method for implanting of raising ion implantor life cycle of the present invention, by improving traditional germanium method for implanting, utilize SiH
4Replace H
2, by SiH
4And GeF
4Mix, due to SiH
4And GeF
4Collision decomposites Ge in the Implantation chamber
+And Si
+, and F and the H of free state, F and H reaction generate HF gas, can avoid the F ion to react with W, W(s)+F (g)+H (g)=W(s)+3HF (g); Like this, avoided on the Implantation cavity, forming the homogeneity that the soft flocks thing affects line, reduced the corrosion to cavity, but also greatly reduced the technique degree of danger; In addition, Ge
+And Si
+After accelerate in extraction pole magnetic field, deflect, the molecular weight that is 40, Ge due to the molecular weight of Si is 72, and both differ larger, after accelerate in extraction pole magnetic field, and Si
+Acceleration and deflection angle can not be excluded by extraction pole it, and Ge
+Acceleration and deflection angle make it enter wafer by extraction pole, thereby guaranteed the element purity that follow-up germanium injects.
Above-described is only embodiments of the invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure done of every utilization specification of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. a germanium method for implanting that improves the ion implantor life cycle, is characterized in that, comprising:
Step S01: wafer is put into to the Implantation chamber, described chamber is vacuumized;
Step S02: pass into GeF in described Implantation chamber
4And SiH
4Gas;
Step S03: the described GeF of electron-beam excitation in described chamber
4And SiH
4Gas decomposes, the Si of decomposition
+, free F and free H be discharged from described chamber;
Step S04: the Ge decomposed in described chamber
+Be injected in described wafer;
Wherein,
Described free F and free H reaction generate HF gas, are drawn out of described chamber;
The Si decomposed in described chamber
+And Ge
+Enter the magnetic field of the extraction pole in described chamber, after accelerating, described Si
+Can not be excluded by described magnetic field described Ge
+After deflecting, described magnetic field injects in described wafer.
2. method according to claim 1, is characterized in that, SiH
4With GeF
4Flow proportional be more than or equal to 1:1.
3. method according to claim 1, is characterized in that, SiH
4Flow be greater than zero, and be less than or equal to 3sccm.
4. method according to claim 1, is characterized in that, the flow of described GeF4 is zero for being greater than, and is less than or equal to 3sccm.
5. method according to claim 1, is characterized in that, described extraction pole magnetic field is 90 degree magnetic fields.
6. method according to claim 1, is characterized in that, described Ge
+90 degree deflections vertical the injection in described wafer occur through described extraction pole magnetic field.
7. method according to claim 1, is characterized in that, in described step S02, adopts vacuum pump to extract described free F and free H and HF gas out described chamber.
8. method according to claim 1, is characterized in that, the voltage that described ion implantor adopts is 1KV-60KV, and vacuum degree is 10
-7Pa-10
-6Pa.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465292A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
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| WO2011106750A2 (en) * | 2010-02-26 | 2011-09-01 | Advanced Technology Materials, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| CN102779714A (en) * | 2012-08-20 | 2012-11-14 | 杭州士兰集成电路有限公司 | Bivalent boron ion implantation technology in bipolar circuit |
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Patent Citations (6)
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| JPH0799035A (en) * | 1993-08-05 | 1995-04-11 | Canon Inc | Ion implanting device and ion implanting method |
| CN1438500A (en) * | 2003-03-04 | 2003-08-27 | 山东大学 | Method for preparing ridge-shape light-wave-guide of optical crystal by ion injection method |
| CN101681782A (en) * | 2007-03-29 | 2010-03-24 | 瓦里安半导体设备公司 | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| CN101899645A (en) * | 2009-06-01 | 2010-12-01 | 无锡华润上华半导体有限公司 | Ion implantation method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465292A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
| CN104465292B (en) * | 2014-11-28 | 2017-05-03 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
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Application publication date: 20131127 |