CN103408302B - 一种高介高温度稳定陶瓷电容器介质及其制备方法 - Google Patents
一种高介高温度稳定陶瓷电容器介质及其制备方法 Download PDFInfo
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- CN103408302B CN103408302B CN201310304829.6A CN201310304829A CN103408302B CN 103408302 B CN103408302 B CN 103408302B CN 201310304829 A CN201310304829 A CN 201310304829A CN 103408302 B CN103408302 B CN 103408302B
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CN105084892B (zh) * | 2015-08-11 | 2017-09-01 | 电子科技大学 | 高介单层微型陶瓷电容器基片材料及其制备方法 |
CN105636275A (zh) * | 2016-02-12 | 2016-06-01 | 慈溪锐恩电子科技有限公司 | 一种压电感应遥控led灯的方法以及压电感应遥控led灯和开关 |
CN106587988B (zh) * | 2016-11-14 | 2019-10-01 | 江苏大学 | 一种高温度稳定陶瓷电容器介质 |
CN108249915B (zh) * | 2016-12-28 | 2021-04-16 | Tdk株式会社 | 电介质组合物及电子部件 |
CN106854077B (zh) * | 2016-12-29 | 2019-06-14 | 汕头市瑞升电子有限公司 | 一种安规陶瓷电容器介质材料及其制备方法 |
CN107188562A (zh) * | 2017-06-23 | 2017-09-22 | 汕头市瑞升电子有限公司 | 一种高介电常数低损耗高温度稳定陶瓷电容器介质及其制备方法 |
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US6734127B2 (en) * | 2001-10-09 | 2004-05-11 | Dong-Hau Kuo | Ceramic materials for capacitors with a high dielectric constant and a low capacitance change with temperature |
CN100573757C (zh) * | 2007-09-26 | 2009-12-23 | 江苏大学 | 一种高压陶瓷电容器介质 |
CN101386534B (zh) * | 2008-10-24 | 2012-07-04 | 江苏大学 | 一种中低温烧结高压陶瓷电容器介质 |
CN102531572A (zh) * | 2010-12-13 | 2012-07-04 | 王强 | 一种温度补偿高频微波电容器介质材料 |
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Effective date of registration: 20160803 Address after: 515041 Guangdong province Shantou Jinping District Yuehua Industrial Zone Lvhang Chaoshan road building first, fourth Patentee after: Shantou Rui Sheng Electronics Co., Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: Jiangsu University |
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Effective date of registration: 20210428 Address after: 363500 green land Industrial Park, Zhao'an Industrial Park, Zhangzhou City, Fujian Province Patentee after: Fujian Ruisheng Electronic Technology Co.,Ltd. Address before: 515041 Guangdong province Shantou Jinping District Yuehua Industrial Zone Lvhang Chaoshan road building first, fourth Patentee before: SHANTOU RUISHENG ELECTRON Co.,Ltd. |
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