CN103407996A - High conductivity graphene preparation method - Google Patents
High conductivity graphene preparation method Download PDFInfo
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- CN103407996A CN103407996A CN2013102994411A CN201310299441A CN103407996A CN 103407996 A CN103407996 A CN 103407996A CN 2013102994411 A CN2013102994411 A CN 2013102994411A CN 201310299441 A CN201310299441 A CN 201310299441A CN 103407996 A CN103407996 A CN 103407996A
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Abstract
The invention relates to a high conductivity graphene preparation method, which comprises the following steps: adopting an iron-nickel alloy as a substrate material, alternately washing the iron-nickel alloy 5 times with ethanol and water, and carrying out nature air drying on the substrate; placing the iron-nickel alloy substrate in a quartz furnace, wherein a heating rate of the quartz furnace is 15 DEG C/min, and the final heating temperature achieves 1020-1040 DEG C; introducing nitrogen, wherein a nitrogen flow rate is 30 sccm; after a temperature of the quartz furnace is stable, uniformly injecting ethylbenzene; cooling the quartz furnace to a room temperature, and taking the sample; and carrying out ultrasonic separation on the sample to obtain the graphene, wherein an ultrasonic separation power is 600 w, and a time is 100-120 min. The prepared graphene has good conductivity.
Description
Technical field
The present invention relates to a kind of method for preparing Graphene, particularly relate to a kind of preparation method of high conductivity Graphene.
Background technology
The certain physical characteristics that Graphene has has very wide prospect at present, as good thermal conductivity, electroconductibility, carrier mobility, larger specific surface area etc.In the preparation method of Graphene, chemical reduction method is to use a kind of more method, but chemical reduction method pollutes greatly, use organic reagent too much, has limited its development.Than chemical reduction method, chemical Vapor deposition process has larger use range, simultaneously also can be on a large scale for the preparation of Graphene.
Summary of the invention
The technical problem solved: the lower problem of graphene conductive rate that the conventional chemical vapour deposition process prepares.
Technical scheme: the invention discloses a kind of preparation method of high conductivity Graphene, comprise the following steps: (1) substrate material is iron-nickel alloy, and iron-nickel alloy is alternately cleaned with the second alcohol and water, and wash number is 5 times, relief substrate natural air drying; (2) the iron-nickel alloy substrate is put into to quartzy stove, quartzy stove temperature rise rate is 15 ℃/min, final Heating temperature to 1020 ℃～1040 ℃, and logical nitrogen, nitrogen flow rate is 30sccm; (3) after quartzy furnace temperature is stablized, evenly inject ethylbenzene; (4) quartzy stove is cooled to room temperature, take out sample; (5) sample is carried out to ultrasonic separation, ultrasonic separation power is 600w, and the time is 100～120min, obtains Graphene.
Beneficial effect: the Graphene prepared has good electroconductibility.
Embodiment
Embodiment 1
Substrate material is iron-nickel alloy, and iron-nickel alloy is alternately cleaned with the second alcohol and water, and wash number is 5 times, relief substrate natural air drying; The iron-nickel alloy substrate is put into to quartzy stove, and quartzy stove temperature rise rate is 15 ℃/min, final Heating temperature to 1020 ℃, and logical nitrogen, nitrogen flow rate is 30sccm; After quartzy furnace temperature is stable, evenly inject purity and be 99.99% ethylbenzene; Quartzy stove is cooled to room temperature, take out sample; Sample is carried out to ultrasonic separation, and ultrasonic separation power is 600w, and the time is 100min, obtains Graphene.
Embodiment 2
Substrate material is iron-nickel alloy, and iron-nickel alloy is alternately cleaned with the second alcohol and water, and wash number is 5 times, relief substrate natural air drying; The iron-nickel alloy substrate is put into to quartzy stove, and quartzy stove temperature rise rate is 15 ℃/min, final Heating temperature to 1030 ℃, and logical nitrogen, nitrogen flow rate is 30sccm; After quartzy furnace temperature is stable, evenly inject ethylbenzene; Quartzy stove is cooled to room temperature, take out sample; Sample is carried out to ultrasonic separation, and ultrasonic separation power is 600w, and the time is 120min, obtains Graphene.
Embodiment 3
Substrate material is iron-nickel alloy, and iron-nickel alloy is alternately cleaned with the second alcohol and water, and wash number is 5 times, relief substrate natural air drying; The iron-nickel alloy substrate is put into to quartzy stove, and quartzy stove temperature rise rate is 15 ℃/min, final Heating temperature to 1040 ℃, and logical nitrogen, nitrogen flow rate is 30sccm; After quartzy furnace temperature is stable, evenly inject ethylbenzene; Quartzy stove is cooled to room temperature, take out sample; Sample is carried out to ultrasonic separation, and ultrasonic separation power is 600w, and the time is 110min, obtains Graphene.
The Graphene sample of embodiment 1, embodiment 2, embodiment 3 is carried out to conducting performance test, and the specific conductivity of embodiment 1 is 2121s/m.The specific conductivity of embodiment 2 is 2157s/m, and the specific conductivity of embodiment 3 is 2235s/m.The Graphene prepared by the present invention has all possessed good electroconductibility.
Claims (4)
1. the preparation method of a high conductivity Graphene is characterized in that comprising the following steps:
(1) substrate material is iron-nickel alloy, and iron-nickel alloy is alternately cleaned with the second alcohol and water, and wash number is 5 times, relief substrate natural air drying;
(2) the iron-nickel alloy substrate is put into to quartzy stove, quartzy stove temperature rise rate is 15 ℃/min, final Heating temperature to 1020 ℃～1040 ℃, and logical nitrogen, nitrogen flow rate is 30sccm;
(3) after quartzy furnace temperature is stablized, evenly inject ethylbenzene;
(4) quartzy stove is cooled to room temperature, take out sample;
(5) sample is carried out to ultrasonic separation, ultrasonic separation power is 600w, and the time is 100～120min, obtains Graphene.
2. the preparation method of a kind of high conductivity Graphene according to claim 1, is characterized in that final Heating temperature is 1030 ℃.
3. the preparation method of a kind of high conductivity Graphene according to claim 1, is characterized in that ethylbenzene purity is more than 99.9%.
4. the preparation method of a kind of high conductivity Graphene according to claim 1, is characterized in that the ultrasonic separation time is 110min.
Priority Applications (1)
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| CN2013102994411A CN103407996A (en) | 2013-07-17 | 2013-07-17 | High conductivity graphene preparation method |
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| CN2013102994411A CN103407996A (en) | 2013-07-17 | 2013-07-17 | High conductivity graphene preparation method |
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| CN103407996A true CN103407996A (en) | 2013-11-27 |
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Citations (5)
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| CN101474898A (en) * | 2009-01-16 | 2009-07-08 | 南开大学 | Conductive carbon film based on graphene as well as preparation method and application |
| CN101993060A (en) * | 2009-08-19 | 2011-03-30 | 中国科学院金属研究所 | Method for massively preparing graphene with excellent electrical conductivity and thermal stability |
| CN102092710A (en) * | 2010-12-17 | 2011-06-15 | 中国科学院化学研究所 | Regular graphene and preparation method thereof |
| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN103086360A (en) * | 2011-11-01 | 2013-05-08 | 海洋王照明科技股份有限公司 | Method for continuously preparing graphene |
-
2013
- 2013-07-17 CN CN2013102994411A patent/CN103407996A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101474898A (en) * | 2009-01-16 | 2009-07-08 | 南开大学 | Conductive carbon film based on graphene as well as preparation method and application |
| CN101993060A (en) * | 2009-08-19 | 2011-03-30 | 中国科学院金属研究所 | Method for massively preparing graphene with excellent electrical conductivity and thermal stability |
| CN102092710A (en) * | 2010-12-17 | 2011-06-15 | 中国科学院化学研究所 | Regular graphene and preparation method thereof |
| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN103086360A (en) * | 2011-11-01 | 2013-05-08 | 海洋王照明科技股份有限公司 | Method for continuously preparing graphene |
Non-Patent Citations (4)
| Title |
|---|
| HAIQUN CHEN: "Mechanically Strong, Electrically Conductive, and Biocompatible Graphene Paper", 《ADVANCED MATERIALS》 * |
| SASHA STANKOVICH: "Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide", 《CARBON》 * |
| 张伟娜等: "石墨烯的制备方法及其应用特性", 《化工新型材料》 * |
| 朱宏伟等: "《石墨烯——结构、制备方法与性能表征》", 30 November 2011 * |
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Application publication date: 20131127 |