CN103400765B - The manufacture method of oxide thin film transistor - Google Patents
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- CN103400765B CN103400765B CN201310282038.8A CN201310282038A CN103400765B CN 103400765 B CN103400765 B CN 103400765B CN 201310282038 A CN201310282038 A CN 201310282038A CN 103400765 B CN103400765 B CN 103400765B
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Abstract
The manufacture method of a kind of oxide thin film transistor, comprises the following steps: in aerobic atmosphere, is placed in annealing furnace by described oxide thin film transistor and carries out annealing for the first time, and wherein, when annealing for the first time, temperature T1 in annealing furnace is in the range of 200 DEG C 400 DEG C；And after having annealed for the first time, described oxide thin film transistor is placed in annealing furnace and carries out annealing for the second time, wherein, during second time annealing, temperature T2 in annealing furnace is in the range of 150 DEG C 250 DEG C, and temperature T1 in annealing furnace when temperature T2 in annealing furnace was annealed less than described first time during the annealing of described second time.The manufacture method of the oxide thin film transistor of the present invention, by using two-part annealing process, not only improves oxygen atom and diffuses into active layer, be conducive to again improving the characteristic of all film layers of oxide thin film transistor.
Description
Technical field
The present invention relates to the manufacture field of semiconductor device, and particularly to the manufacturer of a kind of oxide thin film transistor
Method.
Background technology
Oxide thin film transistor is the one of field-effect transistor, and it includes grid, drain electrode, source electrode, active layer, protection
The film layers such as layer.Oxide thin film transistor has power saving, low cost, the technique advantage such as flexibly because of it, and by as driving element
It is widely used in display device.
In the manufacture process of oxide thin film transistor, in order to improve the performance of oxide thin film transistor, generally need
Oxide thin film transistor is made annealing treatment.The purpose making annealing treatment oxide thin film transistor has two:
(1) make the oxygen atom in anneal environment diffuse into active layer, and then neutralize a large amount of Lacking oxygen because producing during protective layer film forming
(main source of carrier)；(2) stress and the defect state of all film layers (containing interface) of oxide thin film transistor are reduced.?
When making annealing treatment oxide thin film transistor, higher annealing temperature beneficially oxygen atom diffuses into active layer, but
It is unfavorable for the improvement of film bed boundary characteristic；Otherwise, although relatively low annealing temperature advantageously reduces answering in the characteristic of film bed boundary
Power and defect state, but oxygen atom cannot diffuse into active layer through protective layer fully because energy is relatively low.But, existing
Oxide thin film transistor is carried out annealing treatment only with single temperature by the annealing process of the oxide thin film transistor in technology
Reason, thus cause the manufacture method of existing oxide thin film transistor can not take into account above-mentioned both sides effect.
Summary of the invention
It is an object of the invention to, it is provided that the manufacture method of a kind of oxide thin film transistor, it both can be conducive to oxygen
Atoms permeating enters active layer, can improve again the film layer characteristic of oxide thin film transistor.
The manufacture method of a kind of oxide thin film transistor, comprises the following steps: in aerobic atmosphere, by described oxide
Thin film transistor (TFT) is placed in annealing furnace and carries out annealing for the first time, wherein, and the scope of temperature T1 in annealing furnace during annealing for the first time
It it is 200 DEG C-400 DEG C；And after having annealed for the first time, described oxide thin film transistor is placed in annealing furnace and carries out the
Double annealing, wherein, during second time annealing, temperature T2 in annealing furnace is in the range of 150 DEG C-250 DEG C, and described second time
Temperature T1 in annealing furnace when temperature T2 in annealing furnace was annealed less than described first time during annealing.
In one embodiment of the invention, the oxygen content by volume ratio in described aerobic atmosphere is calculated as
21%-100%。
In one embodiment of the invention, in the lehr described oxide thin film transistor is carried out described
For the first time during annealing, the time of annealing described first time is at least 40 minutes.
In one embodiment of the invention, the time of described second time annealing is at least 60 minutes.
In one embodiment of the invention, described aerobic atmosphere is air or purity oxygen or oxygen and nitrogen
The mixed gas of gas.
In one embodiment of the invention, the annealing of described second time is to carry out in anaerobic atmosphere.
In one embodiment of the invention, before carrying out oxide thin film transistor annealing for the first time also
Comprise the following steps: a substrate is provided；Form grid on the substrate；Form the grid covering described grid on the substrate
Pole insulating barrier, wherein said gate insulator has first area, second area and the 3rd region, wherein said second area
Being positioned at the surface of described grid, described first area and described 3rd region lay respectively at the both sides of described second area；?
The first area of described gate insulator and the 3rd region form drain electrode and source electrode respectively；The secondth district at described gate insulator
Active layer it is formed with on territory；And on described drain electrode, described active layer and described source electrode, form their protective layer of covering.
In one embodiment of the invention, described drain electrode, described active layer and described source electrode are formed and protects
Between the step that the step of sheath and carry out oxide thin film transistor is annealed for the first time further comprising the steps of: described guarantor
The overlying regions being positioned at described drain electrode side of sheath forms pixel electrode.
In one embodiment of the invention, described protective layer is just formed with contact to the region of described drain electrode
Hole, described pixel electrode is connected with described drain electrode by described contact hole.
In one embodiment of the invention, described drain electrode and described source electrode are connected with described active layer.
Present invention have the advantages that, the manufacture method of the oxide thin film transistor of the present invention is annealed by using two-part
Technique, i.e. carries out oxide thin film transistor annealing, to oxidation in low temperature environment for the first time in the oxygen containing environment of high temperature
Thin film transistor (TFT) carries out second time and anneals, so that oxide thin film transistor is made annealing treatment, so that the oxidation of the present invention
The manufacture method of thing thin film transistor (TFT) not only improves oxygen atom and diffuses into active layer, is conducive to again improving sull crystal
The characteristic of all film layers of pipe.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of description, and in order to allow the above and other objects, features and advantages of the present invention can
Become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, describe in detail as follows.
Accompanying drawing explanation
Fig. 1 is the structural representation of the oxide thin film transistor of one embodiment of the invention.
Fig. 2 is the flow chart of the manufacture method of the oxide thin film transistor of one embodiment of the invention.
Fig. 3 is the transfer characteristic curve figure after oxide thin film transistor A anneals under single hot conditions.
Fig. 4 is the transfer characteristic curve figure after oxide thin film transistor B anneals under single cryogenic conditions.
Fig. 5 is the transfer characteristic curve figure after oxide thin film transistor C uses two-part annealing process.
Fig. 6 is the sull crystal obtained by the transfer characteristic curve of the oxide thin film transistor in Fig. 3-Fig. 5
The characterisitic parameter table of pipe.
Concrete the present embodiment
By further illustrating the technological means and effect that the present invention taked by reaching predetermined goal of the invention, below in conjunction with
Accompanying drawing and preferred embodiment, specific embodiment, structure, feature and the effect thereof to the present invention, after describing in detail such as.
Fig. 1 is the structural representation of the oxide thin film transistor of one embodiment of the invention.Refer to Fig. 1, the present invention's
Oxide thin film transistor is used as the driving element of such as liquid crystal display, and it includes substrate 11, grid 12, gate insulator
13, drain electrode 14, source electrode 15, active layer 17, protective layer 18 and pixel electrode 19.
Substrate 11 is transparency carrier, and it can be made up of glass, quartz or transparent polymer material etc..
Grid 12 is arranged on the substrate 11.In the present embodiment, grid 12 is by using magnetron sputtering method at substrate 11
Upper formation the first conducting film, patterns this first conducting film by photoetching process the most again and is formed.First conducting film is i.e.
As long as the material electric conductivity of grid 12 is well, can select as required, such as, can be Ti(titanium), Al(aluminum), Pt(platinum),
Au(gold) etc. metal simple-substance or the alloy comprising at least one of which or comprise the metal-oxide of at least one of which.
Gate insulator 13 is for setting of being insulated by grid 12, is formed on the substrate 11 in the way of covering grid 12.
In the present embodiment, gate insulator 13 is by using plasma chemical vapour deposition technique
(PlasmaEnhancedChemicalVaporDeposition, PECVD) is formed on the substrate 11 and covers the first exhausted of grid 12
Velum and formed.As long as the material of the first dielectric film i.e. material insulating properties of gate insulator 13 is remarkably, the first insulation
Film can use such as silicon oxide layer (SiO2), silicon nitride film (SiN), pellumina (Al2O3) etc..Gate insulator 13 includes
First area 131, second area 132 and the 3rd region 133.Wherein, second area 132 is positioned at the surface of grid 12, and first
Region 131 and the 3rd region 133 lay respectively at the both sides of second area 132.
Drain electrode 14 is arranged on the surface of the first area 131 of gate insulator 13.
Source electrode 15 is arranged on the surface in the 3rd region 133 of gate insulator 13.In the present embodiment, drain electrode 14 and source
Pole 15 is by using magnetron sputtering method to form the second conducting film on gate insulator 13, carrying out figure by photoetching process the most again
This second conducting film of caseization and formed, and make the drain electrode 14 formed and source electrode 15 lay respectively at the firstth district of gate insulator 13
Territory 131 and the top in the 3rd region 133.As long as the second conducting film i.e. drain 14 and source electrode 15 material electric conductivity well,
Can select as required, for example, for Ti(titanium), Al(aluminum), Pt(platinum), Au(gold) etc. metal simple-substance or comprise at least a part of which one
The alloy planted or the metal-oxide comprising at least one of which.
Active layer 17 is to be arranged on the oxide semiconductor layer above the second area 132 of gate insulator 13, its across
Gate insulator 13 is oppositely arranged with grid 12, and active layer 17 is connected with drain electrode 14 and source electrode 15.It should be noted that
In the present embodiment, active layer 17 is by using magnetron sputtering method to form oxide semiconductor film on gate insulator 13, so
After pattern this oxide semiconductor film by photoetching process again and formed.The oxide semiconductor film i.e. material of active layer 17
For example, contain In(indium), Ga(gallium), Zn(zinc) amorphous metal-oxide semiconductor (MOS).
Protective layer 18 is formed at drain electrode 14, source electrode 15, active layer in the way of covering drain electrode 14, source electrode 15 and active layer 17
17 and gate insulator 13 on.In the present embodiment, protective layer 18 is by using magnetron sputtering method to form covering drain electrode
14, source electrode 15 and the second dielectric film of active layer 17, pattern this second dielectric film by photoetching process the most again, make this
Two dielectric films are just being formed with contact hole 181 to the region of drain electrode 14, thus form protective layer 18.In other embodiments, exist
In the preparation process of protective layer 18, it is also possible to using plasma chemical vapour deposition technique formed cover drain electrode 14, source electrode 15 and
Second dielectric film of active layer 17.As long as the second dielectric film i.e. material insulating properties of protective layer 18 is remarkably, the second dielectric film
Such as silicon oxide layer (SiO can be used2), silicon nitride film (SiN), pellumina (Al2O3) etc..
Pixel electrode 19 is formed at the overlying regions being positioned at drain electrode 14 sides of protective layer 18.In the present embodiment, pixel
Electrode 19 is by using magnetron sputtering method to form the 3rd conducting film at the overlying regions being positioned at drain electrode 14 sides of protective layer 18,
Pattern the 3rd conducting film by photoetching process the most again and formed.Pixel electrode 19 is by the contact hole on protective layer 18
181 are connected with drain electrode 14.It should be noted that pixel electrode 19 is transparency electrode, such as, can be made by tin indium oxide (ITO)
Become.
Refer to Fig. 2, the manufacture method of the oxide thin film transistor of the present invention comprises the following steps:
Step S1 a: substrate 11 is provided.
Step S2: form grid 12 on the substrate 11.Concrete, the is formed on the substrate 11 initially with magnetron sputtering method
One conducting film, then patterns this first conducting film by photoetching process, thus forms grid 12.
Step S3: form the gate insulator 13 covering grid 12 on the substrate 11.Concrete, using plasma chemistry
Vapour deposition process forms the first dielectric film covering grid 12 on the substrate 11, and forms gate insulator 13.Need explanation
It is that gate insulator 13 has first area 131, second area 132 and the 3rd region 133, and second area 132 is positioned at grid
The surface of pole 12, first area 131 and the 3rd region 133 lay respectively at the both sides of second area 132.
Step S4: form drain electrode 14 and source electrode 15 on gate insulator 13.Concrete, exist initially with magnetron sputtering method
Form the second conducting film on gate insulator 13, then pattern this second conducting film by photoetching process, and exhausted at grid
Drain electrode 14 and source electrode 15 is formed on the first area 131 of edge layer 13 and the 3rd region.
Step S5: be formed with active layer 17 on gate insulator 13.Concrete, exhausted at grid initially with magnetron sputtering method
The second area 132 of edge layer 13 forms oxide semiconductor film, then patterns this oxide semiconductor by photoetching process
Film, thus it is formed with active layer 17.It should be noted that active layer 17 is connected with drain electrode 14 and source electrode 15 respectively.
Step S6: form the protective layer 18 covering them on drain electrode 14, active layer 17 and source electrode 15.Concrete, at this
In embodiment, formed initially with magnetically controlled sputter method and cover drain electrode 14, active layer 17 and the second dielectric film of source electrode 15, so
Pattern this second dielectric film by photoetching process afterwards, make this second dielectric film just the region of drain electrode 14 are formed with contact hole
181, thus form covering drain electrode 14, active layer 17 and the protective layer 18 of source electrode 15.In other embodiments, it is also possible to pass through
Plasma chemical vapor deposition is formed and covers drain electrode 14, active layer 17 and the second dielectric film of source electrode 15.
Step S7: form pixel electrode 19 on protective layer 18.Concrete, initially with magnetron sputtering method at protective layer 18
Be positioned at drain electrode 14 sides overlying regions formed the 3rd conducting film, then pattern the 3rd conduction by photoetching process
Film, forms pixel electrode 19, thus obtains oxide thin film transistor.It should be noted that pixel electrode 19 passes through protective layer
Contact hole 181 on 18 is connected with drain electrode 14.
Step S8: in aerobic atmosphere, carries out oxide thin film transistor annealing for the first time.At sull crystal
In the manufacture process of pipe, when forming protective layer 18, owing to plasma discharge can cause the concentration of Lacking oxygen on active layer 17
Dramatically increase, i.e. cause the concentration of carrier to dramatically increase, affect the operating characteristic of oxide thin film transistor, such as, can reduce
The switch current ratio of oxide thin film transistor and threshold voltage etc..Therefore, in aerobic atmosphere, to oxide thin film transistor
Carry out annealing for the first time, the oxygen atom in oxygen atmosphere can be made to diffuse into active layer 17, and then neutralize because of protective layer 18 film forming
Time a large amount of Lacking oxygen of producing, thus improve switch current ratio and the threshold voltage of oxide thin film transistor.Concrete, first
Oxide thin film transistor is placed in annealing furnace, in annealing furnace, is then passed through the gas containing oxygen and then forms aerobic atmosphere
Enclosing, and carry out oxide thin film transistor annealing for the first time at a temperature of T1, the time of annealing is t1 for the first time.Need explanation
, during annealing, temperature T1 in annealing furnace need to ensure that the oxygen atom in oxygen-containing atmosphere has enough mobilities and wears for the first time
The protective layer 18 of oxygen flow compound thin film transistor (TFT) enters inside oxide thin film transistor, it is to be understood that annealing for the first time
Time annealing furnace in the highest oxygen-containing atmosphere of temperature T1 in the mobility of oxygen atom the strongest, but too high annealing temperature is the most unfavorable
It is easy to cause thermal stress, the present invention in device film layer in film tunic matter and the improvement of interfacial characteristics, particularly high annealing
Embodiment in, for the first time during annealing temperature T1 in annealing furnace between 200 DEG C-400 DEG C；The oxygen-containing atmosphere of the first annealing
In oxygen content calculate for example, 21%-100% according to volume basis, the gas for example, air that is passed through during the first annealing, pure oxygen
The mixed gas etc. of gas or oxygen and nitrogen, it is to be understood that the oxygen content in oxygen-containing atmosphere is the highest, annealing for the first time
Effect is the most obvious；Temperature T1 in annealing furnace and the oxygen of annealing for the first time when the time t1 of annealing and annealing for the first time for the first time
Content has relation, and during annealing, temperature T1 in annealing furnace is the highest i.e. for the first time, and the oxygen content of annealing is the highest, for the first time for the first time
The time t1 of annealing is the fewest, however, to ensure that when for the first time annealing, the oxygen atom in oxygen-containing atmosphere can be well into
Inside oxide thin film transistor, even if making oxide thin film transistor reach annealing effect Lacking oxygen for the first time reach specific
Percent neutralization, the time t1 that oxide thin film transistor carries out the first annealing in the lehr is at least 40 minutes.
It is understood that annealing is not limited to carry out in the lehr for the first time, in other embodiments, move back for the first time
Fire can also use the transient high temperature heater meanses such as short annealing (RTP), laser annealing, so can reduce for the first time annealing time
Between t1.
Step S9: oxide thin film transistor is carried out second time and anneals.Active layer due to oxide thin film transistor
The stress (containing interface) of all film layers of the defect states such as point defect, dislocation and planar defect in 17 and oxide thin film transistor
Existence, the operating characteristics of oxide thin film transistor can be reduced, such as, can reduce the switching current of oxide thin film transistor
Ratio, threshold voltage, field-effect mobility and subthreshold swing.Therefore, oxide thin film transistor is carried out second time and anneals,
Stress and the defect state of active layer 17 of oxide thin film transistor all films layer (containing interface) can be reduced, such that it is able to improve
The switch current ratio of oxide thin film transistor, threshold voltage, field-effect mobility and subthreshold swing.Concrete, the
After once annealing terminates, oxide thin film transistor carrying out at a temperature of T2 second time and anneals, the time of annealing is for the second time
T2, and temperature T1 in annealing furnace when temperature T2 in annealing furnace was annealed less than first time during second time annealing.More specifically,
In order to ensure that the oxygen atom in oxide thin film transistor effectively spreads and stress and defect state in each film layer can effectively reduce,
Temperature T2 for example, 150 DEG C-250 DEG C in annealing furnace during second time annealing, and the temperature in annealing furnace during second time annealing
T2 is at least 60 minutes less than temperature T1 in annealing furnace during annealing for the first time, the time t2 of second time annealing.Separately, second time is moved back
When the time t2 of fire and second time annealing, temperature T2 in annealing furnace has relation, and during second time annealing, temperature T2 in annealing furnace is more
Height, the time t2 of second time annealing is the fewest, but in order to make oxide thin film transistor reach second time annealing effect the most fully
Eliminating all stresss in thin film and defect state, the time t2 of second time annealing is at least 60 minutes.Need it is further noted that
When carrying out oxide thin film transistor annealing for the second time, first oxide thin film transistor can be taken out in annealing furnace cooling
After, then oxide thin film transistor is put into annealing furnace carries out second time anneal, it is also possible to after for the first time annealing, pause cold
But i.e. at once carry out second time to anneal, and without after the first annealing by annealing furnace in take out oxide thin film transistor.Also need
It is noted that when oxide thin film transistor being carried out second time and annealing, preferably anneals in stability atmosphere, example
As carried out in the atmosphere such as anaerobic atmosphere such as nitrogen atmosphere, it is to be understood that second time annealing can also be oxygen-containing
The atmosphere such as atmosphere such as air atmosphere, oxygen atmosphere are carried out.When second time annealing is carried out in oxygen-containing atmosphere, due to second
During secondary annealing, the temperature in annealing furnace is relatively low, and therefore, the oxygen atom in oxygen-containing atmosphere is difficult to enter into active through protective layer 18
Having influence on the content of the Lacking oxygen (source of carrier) in active layer in layer 17, therefore, oxygen-containing atmosphere does not interferes with current-carrying
The concentration of son.
With specific embodiment, the superiority that the present invention uses two-part to anneal is described below.Fig. 3 is sull
Transistor A anneal under single hot conditions after transfer characteristic curve figure.Fig. 4 is that oxide thin film transistor B is single
Cryogenic conditions under annealing after transfer characteristic curve figure.Fig. 5 is after oxide thin film transistor C uses two-part annealing process
Transfer characteristic curve figure.Concrete, Fig. 3 is that oxide thin film transistor A is in annealing furnace, in air atmosphere, the temperature of 260 DEG C
The transfer characteristic curve that the lower annealing of degree was formed after 2 hours.Fig. 4 is that oxide thin film transistor B is in annealing furnace, air atmosphere
In, anneal 2 hours at a temperature of 170 DEG C after the transfer characteristic curve that formed.Fig. 5 is that oxide thin film transistor C is at annealing furnace
In, anneal 1 hour in air atmosphere, at a temperature of 260 DEG C, then in annealing furnace, in air atmosphere, at a temperature of 170 DEG C
The transfer characteristic curve formed after annealing 1 hour.Fig. 6 is bent by the transfer characteristic of the oxide thin film transistor in Fig. 3-Fig. 5
The characterisitic parameter table of the oxide thin film transistor that line obtains.Refer to Fig. 3-Fig. 6, from experimental result it will be seen that annealing
Oxide thin film transistor A after annealing 2 hours in stove, in air atmosphere, at a temperature of 260 DEG C has preferable field effect and moves
Shifting rate and subthreshold swing, but the switching current of oxide thin film transistor A is less, and the negative value degree of threshold voltage is too
Greatly；Oxide thin film transistor B after annealing 2 hours in annealing furnace, in air atmosphere, at a temperature of 170 DEG C has preferably
Threshold voltage, but other characteristic index is the most poor；Comparatively speaking, in annealing furnace, in air atmosphere, the temperature of 260 DEG C
Lower annealing 1 hour, then in annealing furnace, anneal 1 hour in air atmosphere, at a temperature of 170 DEG C after sull brilliant
Body pipe C has best overall characteristic, and it has the highest switch current ratio and preferably field-effect mobility, subthreshold value is put
Width and threshold voltage.This results show uses suitable second stage annealing condition can effectively improve sull crystal
The device property of pipe.
In sum, the manufacture method of the oxide thin film transistor of the present invention is by using two-part annealing process, i.e.
Oxide thin film transistor is carried out by the oxygen containing environment of high temperature anneal, to oxide film crystal in low temperature environment for the first time
Pipe carries out second time and anneals, to make annealing treatment oxide thin film transistor, so that the sull of the present invention is brilliant
The manufacture method of body pipe not only improves oxygen atom and diffuses into active layer, is conducive to again improving all of oxide thin film transistor
The characteristic of film layer.
The above, be only presently preferred embodiments of the present invention, and the present invention not makees any pro forma restriction, though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any technology people being familiar with this specialty
Member, in the range of without departing from technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or modification
For the Equivalent embodiments of equivalent variations, as long as being without departing from technical solution of the present invention content, according to the technical spirit pair of the present invention
Any simple modification, equivalent variations and the modification that above example is made, all still falls within the range of technical solution of the present invention.
Claims (10)
1. the manufacture method of an oxide thin film transistor, it is characterised in that comprise the following steps:
One substrate is provided；
Form grid on the substrate；
On the substrate formed cover described grid gate insulator, wherein said gate insulator have first area,
Second area and the 3rd region, wherein said second area is positioned at the surface of described grid, and described first area is with described
3rd region lays respectively at the both sides of described second area；
Drain electrode and source electrode is formed respectively in the first area of described gate insulator and the 3rd region；
The second area of described gate insulator is formed with active layer；
Described drain electrode, described active layer and described source electrode are formed protective layer；
In aerobic atmosphere, described oxide thin film transistor is placed in annealing furnace and carries out annealing, wherein, for the first time for the first time
During annealing, temperature T1 in annealing furnace is in the range of 200 DEG C-400 DEG C；And
After having annealed for the first time, described oxide thin film transistor is placed in annealing furnace and carries out annealing for the second time, wherein,
During second time annealing, temperature T2 in annealing furnace is in the range of 150 DEG C-250 DEG C, and during the annealing of described second time in annealing furnace
Temperature T2 less than described first time anneal time annealing furnace in temperature T1.
2. the manufacture method of oxide thin film transistor as claimed in claim 1, it is characterised in that in described aerobic atmosphere
Oxygen content by volume ratio is calculated as 21%-100%.
3. the manufacture method of oxide thin film transistor as claimed in claim 2, it is characterised in that in the lehr to described
When oxide thin film transistor carries out the annealing of described first time, the time of annealing described first time is at least 40 minutes.
4. the manufacture method of oxide thin film transistor as claimed in claim 3, it is characterised in that the annealing of described second time
Time is at least 60 minutes.
5. the manufacture method of oxide thin film transistor as claimed in claim 2, it is characterised in that described aerobic atmosphere is empty
The mixed gas of gas or purity oxygen or oxygen and nitrogen.
6. the manufacture method of oxide thin film transistor as claimed in claim 1, it is characterised in that the annealing of described second time is
Carry out in anaerobic atmosphere.
7. the manufacture method of oxide thin film transistor as claimed in claim 1, it is characterised in that in described drain electrode, described
Form the step of protective layer on active layer and described source electrode with oxide thin film transistor is carried out the step annealed for the first time it
Between further comprising the steps of:
Pixel electrode is formed above the region being positioned at described drain electrode side of described protective layer.
8. the manufacture method of oxide thin film transistor as claimed in claim 7, it is characterised in that described protective layer is just to institute
The region stating drain electrode is formed with contact hole, and described pixel electrode is connected with described drain electrode by described contact hole.
9. the manufacture method of oxide thin film transistor as claimed in claim 1, it is characterised in that described drain electrode and described source
Pole is connected with described active layer.
10. the manufacture method of oxide thin film transistor as claimed in claim 1, it is characterised in that described active layer is oxygen
Compound semiconductor layer.
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| CN105870057B (en) * | 2016-04-28 | 2019-06-07 | 京东方科技集团股份有限公司 | A kind of array substrate, its production method and display device |
| CN107579077B (en) * | 2017-08-11 | 2020-01-07 | 上海天马有机发光显示技术有限公司 | Display panel, manufacturing method thereof and display device |
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