CN103390698A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN103390698A CN103390698A CN2012101405839A CN201210140583A CN103390698A CN 103390698 A CN103390698 A CN 103390698A CN 2012101405839 A CN2012101405839 A CN 2012101405839A CN 201210140583 A CN201210140583 A CN 201210140583A CN 103390698 A CN103390698 A CN 103390698A
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Abstract
The invention provides a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a patterned substrate, at least one buffer layer, a defect blocking layer and a light-emitting assembly, wherein the patterned substrate is provided with multiple protruding parts, and a flat area is formed between every two adjacent protruding parts; the buffer layer is formed on the patterned substrate and at least fills in the gaps of the protruding parts of the patterned substrate; the defect blocking layer is formed on the buffer layer; the light-emitting assembly is formed on the defect blocking layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of light-emitting diode of tool fabricating low-defect-density and manufacture method thereof.
Background technology
Brilliant gallium nitride layer of heap of stone is the conventional process technology of making light-emitting diode (LED) on sapphire substrate.Yet, gallium nitride epitaxial layer and sapphire substrate lattice constant and thermal coefficient of expansion (CTE) between the two has very big difference, therefore, can produce highdensity line dislocation defects (threading dislocation) in the gallium nitride epitaxial layer, its density can be up to 10
9~ 10
11/ square centimeter.This kind high-density lines dislocation defects can limit the luminous efficiency of light-emitting diode greatly.In addition, the semiconductor material that light-emitting diode uses has high index of refraction, and the light that light-emitting diode is produced is subject to limitation (trapped).Therefore, the most of light from active region is launched, will be limited to semiconductor inside, and these likely can be absorbed by thicker substrate by the light of limitation.
, in order to address the above problem, usually first carry out the etched pattern of sapphire substrate before crystalline substance of heap of stone, to form patterning sapphire substrate (patterned sapphire substrate, PSS).The patterning sapphire substrate can reduce the density that misplaces in the gallium nitride lattice by crystals growth (epitaxial lateral overgrown) laterally of heap of stone, reaches the increase width and penetrates combination, promotes internal quantum.In addition,, by the variation of substrate surface geometry, can change the scattering mechanism of light-emitting diode, most of light that active region produces can be penetrated, thereby increase light extraction efficiency (light extraction efficiency).
Yet, although it is very low to be positioned at the defect concentration of flat surfaces top of patterning sapphire substrate, but, the defect concentration of giving prominence to the shape top that is positioned at the patterning sapphire substrate is but quite high, and this defect can be propagated and diffuse in light-emitting diode component, therefore, need the light emitting diode construction and the manufacture method thereof that propose a kind of novelty badly, in order to the defect concentration above the outstanding shape of further reduction patterning sapphire substrate.
Summary of the invention
The embodiment of the present invention proposes a kind of light-emitting diode and manufacture method thereof, and particularly a kind of iii-nitride light emitting devices, in order to reduce defect concentration, to improve the luminous efficiency of light-emitting diode.
According to the embodiment of the present invention, described method for manufacturing light-emitting comprises:
One patterned substrate is provided, and this patterned substrate has a plurality of ledges, and has flat site between adjacent described ledge;
Form at least one resilient coating on described patterned substrate, wherein this resilient coating fills up the space between the ledge of described patterned substrate at least;
Form a defect barrier layer on described resilient coating; And
Form a luminescence component on described defect barrier layer.
Wherein said patterned substrate comprises the patterning sapphire substrate.
The step that provides of wherein said patterned substrate comprises:
One basic unit is provided; And
Formation has a patterned layer of described a plurality of ledges in described basic unit.
Wherein, the manufacture method of described light-emitting diode also comprises:
Form a nucleating layer between described patterned substrate and described resilient coating.
The formation step of wherein said defect barrier layer comprises:
Replace at least one the first sublayer of storehouse and at least one the second sublayer.
The compound mode of wherein said the first sublayer and described the second sublayer is selected from one of following combination: AlGaN/InGaN, AlGaN/GaN, GaN/InGaN.
The formation step of wherein said luminescence component comprises:
Form a N-shaped doped layer on described defect barrier layer;
Form an active layers on described this N-shaped doped layer; And
Form a p-type doped layer on described active layers.
According to the embodiment of the present invention, light-emitting diode comprises patterned substrate, at least one resilient coating, defect obstruct (dislocation blocking) layer and luminescence component.Wherein, patterned substrate has a plurality of ledges, and has flat site between adjacent ledge.Resilient coating is formed on patterned substrate, and wherein resilient coating fills up the space between the ledge of patterned substrate at least.The defect barrier layer is formed on resilient coating.Luminescence component is formed on the defect barrier layer.
Wherein said patterned substrate comprises the patterning sapphire substrate.
Wherein said patterned substrate comprises:
One basic unit; And
One patterned layer, be formed in described basic unit, and wherein this patterned layer has described a plurality of ledge.
The material of wherein said basic unit comprises: GaAs, germanium surface form SiGe, silicon face forms carborundum, aluminium surface formation aluminium oxide, gallium nitride, indium nitride, aluminium nitride, sapphire, glass, quartz or above-mentioned combination.
The material of wherein said patterned layer comprises: silicon dioxide, carborundum, silicon nitride or above-mentioned combination.
Wherein said resilient coating highly is equal to or greater than 5 nanometers higher than what described protuberance divided.
Wherein said resilient coating highly is equal to or less than 100 nanometers higher than what described protuberance divided.
Wherein said resilient coating comprises undoped gallium nitride, N-shaped gallium nitride, aluminium nitride, aluminium gallium nitride alloy, magnesium nitride, silicon nitride or its combination in any.
Wherein, described light-emitting diode also comprises:
One nucleating layer, be formed between described patterned substrate and described resilient coating.
Wherein said defect barrier layer comprises:
Replace at least one the first sublayer and at least one second sublayer of storehouse.
Wherein the thickness of each described the first sublayer or each described the second sublayer is less than or equal to 20 nanometers.
The thickness of wherein said defect barrier layer is less than or equal to 100 nanometers.
The compound mode of wherein said the first sublayer and described the second sublayer is selected from one of following combination: AlGaN/InGaN, AlGaN/GaN, GaN/InGaN.
Wherein said luminescence component comprises:
One N-shaped doped layer, be positioned on described defect barrier layer;
One active layers, be positioned on described N-shaped doped layer; And
One p-type doped layer, be positioned on described active layers.
Description of drawings
Each processing step of the light-emitting diode (LED) of the formation fabricating low-defect-density of the profile demonstration embodiment of the present invention of Figure 1A to Fig. 1 F.
The reference marker inventory
100 light-emitting diodes
11 patterned substrates
111 ledges
112 flat sites
11A basic unit
The 11B patterned layer
12 resilient coatings
13 nucleating layers
14 defect barrier layers
141 first sublayers
142 second sublayers
15 luminescence components
151n type doped layer
152 active layers
153p type doped layer
Embodiment
Each processing step of the light-emitting diode (LED) 100 of the formation fabricating low-defect-density of the profile demonstration embodiment of the present invention of Figure 1A to Fig. 1 F, the graphic only demonstration level relevant to embodiment.
As shown in Figure 1A, at first provide a patterned substrate (patterned substrate) 11, it has a plurality of ledges 111, cone for example, and it can be pyramid (pyramid) or cone (cone).The top of ledge 111 can be sharp-pointed (as shown in the figure), can be also smooth.Has flat site 112 between adjacent ledge 111.In the present embodiment, patterned substrate 11 be sapphire via the formed patterning sapphire substrate of etching (patterned sapphire substrate, PSS), but be not limited to this.
Figure 1B shows another kind of patterned substrate 11, and it lies in the upper patterned layer 11B with a plurality of ledges 111 that forms of the 11A of basic unit.Wherein, the ledge 111 of patterned layer 11B can be connected to each other, also can be for separating.The 11A of basic unit can be identical with the material of patterned layer 11B, also can be for different.In general, the material of the 11A of basic unit can form SiGe (SiGe) for GaAs (GaAs), germanium (Ge) surface, silicon (Si) surface forms carborundum (SiC), the surperficial aluminium oxide (Al that forms of aluminium (Al)
2O
3), gallium nitride (GaN), indium nitride (InN), aluminium nitride (AlN), sapphire (sapphire), glass, quartz or its combination, but be not limited to this.The material of patterned layer 11B can be silicon dioxide (SiO
2), carborundum (SiC), silicon nitride (SiN
x) or its combination, but not as limit.
Next, as shown in Figure 1 C, form at least one resilient coating 12 on patterned substrate 11, wherein resilient coating 12 fills up the space of 111 of the ledges of patterned substrate 11 at least.In other words, the end face of resilient coating 12 is equal to or higher than the top of the ledge 111 of patterned substrate 11, thereby forms the resilient coating 12 of tool flat top.In one embodiment, resilient coating 12 highly is equal to or greater than 5 nanometers higher than ledge 111, is preferably and is equal to or greater than 10 nanometers.In another embodiment, resilient coating 12 highly is equal to or less than 100 nanometers higher than ledge 111, is preferably and is equal to or less than 50 nanometers.In the present embodiment, the formation of resilient coating 12 lies in building crystal to grow at the temperature of about 1080 ℃.Resilient coating comprises undoped gallium nitride, N-shaped gallium nitride, aluminium nitride, aluminium gallium nitride alloy, magnesium nitride, silicon nitride or its combination in any.For the structure shown in Fig. 1 C, resilient coating 12 is positioned at the defect (dislocations) that ledge 111 tops have and comes manyly far beyond the defect of flat site 112 tops.
Fig. 1 D shows the another kind of execution mode of Fig. 1 C, that is, before forming resilient coating 12, more additionally form a nucleation (nucleation) layer 13 on patterned substrate 11, for example be formed at the surface of the ledge 111 of patterned substrate 11.In the part example, nucleating layer 13 also can be formed at the surface of the flat site 112 of patterned substrate 11.In the present embodiment, at the temperature of about 500 ℃, building crystal to grow thickness is approximately the nucleating layer 13 of 40 ~ 90 nanometers (nm) on patterned substrate 11.Then, at the temperature of about 1050 ℃, nucleating layer 13 is carried out recrystallization (recrystallization) technique.
Then, as shown in Fig. 1 E, form defect and intercept (dislocation blocking) layer 14 on resilient coating 12, in order to the aforementioned defect that causes because of ledge 111 of further reduction.In the present embodiment, defect barrier layer 14 is to replace storehouse by at least one the first sublayer 141 with at least one the second sublayer 142 to form.Wherein, the thickness of each the first sublayer 141 or each the second sublayer 142 is less than or equal to 20 nanometers.The thickness of the defect barrier layer 14 of the present embodiment is less than or equal to 100 nanometers.In one embodiment, defect barrier layer 14 comprises superlattice structure, it is mainly to replace storehouse by the first/the second different sublayer 141/142 of two materials to form, for example by gallium nitride (GaN) and InGaN (InGaN), replacing storehouse forms, perhaps by gallium nitride (GaN) and aluminium gallium nitride alloy (AlGaN), replace storehouse and form, perhaps by InGaN (GaN) and aluminium gallium nitride alloy (AlGaN), replace storehouse and form.In another embodiment, superlattice structure system by two materials are identical but the first/the second sublayer 141/142 that composition is different (for example: formation temperature is different) alternately storehouse form., because the strain field that has in superlattice structure (strain field) can give complications (bend) with the above-mentioned defect that causes because of ledge 111, make it can not propagate the level that diffuses to follow-up growth, thereby further reduced defect.
As shown in Fig. 1 F, form luminescence component 15 on defect barrier layer 14.In the present embodiment, at the temperature of about 1080 ℃, at first form N-shaped doped layer 151 on defect barrier layer 14, then form active layers 152 on N-shaped doped layer 151, then form p-type doped layer 153 on active layers 152.The material of N-shaped doped layer 151, active layers 152 and p-type doped layer 153 can be the III group-III nitride, but is not limited to this.As previously mentioned, because defect barrier layer 14 can effectively intercept because of the propagation of ledge 111 defect that causes diffusion, thereby the N-shaped doped layer 151(that is reduced the present embodiment in large quantities and formed and follow-up active layers 152 and p-type doped layer 153) defect concentration, for example make the defect concentration of N-shaped doped layer 151 be less than or equal to 5 * 10
5/ square centimeter.
The foregoing is only the present invention's preferred embodiment, not in order to limit the present invention's claim; All other do not break away from lower the equivalence of completing change of spirit or the modification that invention is disclosed, and all should comprise within the scope of the present invention.
Claims (21)
1. the manufacture method of a light-emitting diode comprises:
One patterned substrate is provided, and this patterned substrate has a plurality of ledges, and has flat site between adjacent described ledge;
Form at least one resilient coating on described patterned substrate, wherein this resilient coating fills up the space between the ledge of described patterned substrate at least;
Form a defect barrier layer on described resilient coating; And
Form a luminescence component on described defect barrier layer.
2. the manufacture method of light-emitting diode according to claim 1, wherein said patterned substrate comprises the patterning sapphire substrate.
3. the manufacture method of light-emitting diode according to claim 1, the step that provides of wherein said patterned substrate comprises:
One basic unit is provided; And
Formation has a patterned layer of described a plurality of ledges in described basic unit.
4. the manufacture method of light-emitting diode according to claim 1 also comprises:
Form a nucleating layer between described patterned substrate and described resilient coating.
5. the manufacture method of light-emitting diode according to claim 1, the formation step of wherein said defect barrier layer comprises:
Replace at least one the first sublayer of storehouse and at least one the second sublayer.
6. the manufacture method of light-emitting diode according to claim 5, the compound mode of wherein said the first sublayer and described the second sublayer is selected from one of following combination: AlGaN/InGaN, AlGaN/GaN, GaN/InGaN.
7. the manufacture method of light-emitting diode according to claim 1, the formation step of wherein said luminescence component comprises:
Form a N-shaped doped layer on described defect barrier layer;
Form an active layers on described N-shaped doped layer; And
Form a p-type doped layer on described active layers.
8. light-emitting diode comprises:
One patterned substrate, this patterned substrate has a plurality of ledges, and has flat site between adjacent described ledge;
At least one resilient coating, be formed on described patterned substrate, and wherein this resilient coating fills up the space between the ledge of described patterned substrate at least;
One defect barrier layer, be formed on described resilient coating; And
One luminescence component, be formed on described defect barrier layer.
9. according to claim 8 light-emitting diode, wherein said patterned substrate comprises the patterning sapphire substrate.
10. according to claim 8 light-emitting diode, wherein said patterned substrate comprises:
One basic unit; And
One patterned layer, be formed in described basic unit, and wherein this patterned layer has described a plurality of ledge.
11. light-emitting diode according to claim 9, the material of wherein said basic unit comprises: GaAs, germanium surface form SiGe, silicon face forms carborundum, aluminium surface formation aluminium oxide, gallium nitride, indium nitride, aluminium nitride, sapphire, glass, quartz or above-mentioned combination.
12. light-emitting diode according to claim 10, the material of wherein said patterned layer comprises: silicon dioxide, carborundum, silicon nitride or above-mentioned combination.
13. light-emitting diode according to claim 8, wherein said resilient coating highly are equal to or greater than 5 nanometers higher than what described protuberance divided.
14. light-emitting diode according to claim 8, wherein said resilient coating highly are equal to or less than 100 nanometers higher than what described protuberance divided.
15. light-emitting diode according to claim 8, wherein said resilient coating comprise undoped gallium nitride, N-shaped gallium nitride, aluminium nitride, aluminium gallium nitride alloy, magnesium nitride, silicon nitride or its combination in any.
16. light-emitting diode according to claim 8 also comprises:
One nucleating layer, be formed between described patterned substrate and described resilient coating.
17. light-emitting diode according to claim 8, wherein said defect barrier layer comprises:
Replace at least one the first sublayer and at least one second sublayer of storehouse.
18. described light-emitting diode according to claim 17, wherein the thickness of each described the first sublayer or each described the second sublayer is less than or equal to 20 nanometers.
19. light-emitting diode according to claim 8, the thickness of wherein said defect barrier layer is less than or equal to 100 nanometers.
20. described light-emitting diode according to claim 17, the compound mode of wherein said the first sublayer and described the second sublayer is selected from one of following combination: AlGaN/InGaN, AlGaN/GaN, GaN/InGaN.
21. light-emitting diode according to claim 8, wherein said luminescence component comprises:
One N-shaped doped layer, be positioned on described defect barrier layer;
One active layers, be positioned on described N-shaped doped layer; And
One p-type doped layer, be positioned on described active layers.
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| CN2012101405839A CN103390698A (en) | 2012-05-08 | 2012-05-08 | Light-emitting diode and manufacturing method thereof |
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| CN104091868A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| CN105264674A (en) * | 2013-12-20 | 2016-01-20 | 华为技术有限公司 | Semiconductor device and method for manufacturing same |
| CN104167475B (en) * | 2014-07-16 | 2017-04-26 | 华灿光电股份有限公司 | Light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN108346725A (en) * | 2017-12-29 | 2018-07-31 | 华灿光电(苏州）有限公司 | A kind of gallium nitride based LED epitaxial slice and its manufacturing method |
| CN110491973A (en) * | 2019-07-15 | 2019-11-22 | 西安电子科技大学 | C surface GaN film and preparation method thereof based on SiC graph substrate |
| CN111180564A (en) * | 2020-02-14 | 2020-05-19 | 福建兆元光电有限公司 | High-luminous-efficiency green light LED epitaxial wafer and manufacturing method thereof |
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| CN103915533A (en) * | 2014-04-10 | 2014-07-09 | 杭州士兰明芯科技有限公司 | Graphical substrate and inverted LED chip and manufacturing method thereof |
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Application publication date: 20131113 |