CN103387389A - Five-membered ZnO voltage-sensitive ceramic material having low leak current and sintering method thereof - Google Patents
Five-membered ZnO voltage-sensitive ceramic material having low leak current and sintering method thereof Download PDFInfo
- Publication number
- CN103387389A CN103387389A CN2013103066612A CN201310306661A CN103387389A CN 103387389 A CN103387389 A CN 103387389A CN 2013103066612 A CN2013103066612 A CN 2013103066612A CN 201310306661 A CN201310306661 A CN 201310306661A CN 103387389 A CN103387389 A CN 103387389A
- Authority
- CN
- China
- Prior art keywords
- zno
- pressure
- preparation
- sensitive ceramic
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a five-membered ZnO voltage-sensitive ceramic material having a low leak current. A formula of the material comprises ZnO, Bi2O3, Co2O3, SnO2 and B2O3 in a molar ratio of (100-y-z-m-n)% : y% : z% : m% :n%, wherein y = 0-2, z = 0-1, m = 0-2 and n = 0-2. A ZnO-Bi2O3 series voltage-sensitive resistance material prepared by the invention has a voltage-sensitive field intensity of 163 V/mm-565 V/mm. When the field intensity is greater than 300 V/mm, the nonlinear coefficient is greater than 50, and the leakage current is less than 0.1 [mu]A. When the field intensity is less than 300 V/mm, the nonlinear coefficient alpha is greater than 30, and the leakage current IL is less than 0.1 [mu]A. The material has low sintering temperature and good comprehensive performances. In addition, the preparation method has advantages of simple technology, small energy consumption, environmental protection, and the like, and has a wide application prospect.
Description
Technical field
The invention belongs to the zinc oxide bismuth is pressure sensitive and low-temperature sintering field thereof, and specifically relating to five yuan of a kind of low-leakage currents is ZnO pressure-sensitive ceramic material and low-temperature sintering method thereof.
Background technology
It is good that Zinc-oxide piezoresistor has a non-linear to voltage, anti-surge amount is large, the characteristics such as fast response time, occupied principal market (Leach, the C. of voltage dependent resistor, Grain boundary structures in zinc oxide varisrors, J.Acta, Materialia, 2005,53 (2), 237 ~ 141; Zhang Nanfa, seize the opportunity and make China become world piezoresistor big producing country [J], electronic component and material, February calendar year 2001,20 (1): 31 ~ 34).Wherein leakage current is the important parameter in the ZnO varistor application, power loss when it is determining to apply the stable state external voltage, leakage current is less, less (the Sun Danfeng of the power loss of voltage dependent resistor in circuit, Ji Youzhang, " voltage dependent resistor leakage current ", sensor and sensor, 2009,0908:113-118.).
Piezoresistor relies on its distinctive non-linear character to be widely used in the overvoltage protection of electronic circuit and power system, and there is different requirements different application scenarios to the pressure sensitive voltage of piezoresistor.As in household electrical appliances power lightning protection protection, the pressure sensitive voltage that requires piezoresistor is 220V, and pressure-sensitive field intensity is that the block resistor that the zinc oxide pressure-sensitive ceramic resistance of 300V/mm left and right is made individual layer can meet service requirements in this case.And along with the development of modern integrated circuits and surface mounting technique; operating voltage to the piezoresistor for circuit protection has proposed lower requirement; impel Zinc-oxide piezoresistor to miniaturization, low pressure future development; therefore produced the lamination sheet type Zinc-oxide piezoresistor (to bravely; Xie Daohua, chip multilayer element new technology outline [J], electronic component and material; 1999,18 (4): 34 ~ 42).The interior electrode of lamination sheet type Zinc-oxide piezoresistor generally adopts silver palladium alloy or pure palladium, involves great expense.In order to reduce its cost, require zinc oxide pressure-sensitive ceramic when having good electric property, must reduce the sintering temperature of zinc oxide pressure-sensitive ceramic, realize using fine silver to burn altogether as interior electrode and zinc oxide pressure-sensitive ceramic.At present, the processing method that reduces ceramic sintering temperature has: microwave sintering, hot pressed sintering and traditional liquid phase sintering etc.Wherein the technique of liquid phase sintering is relatively simple, and cost is lower, and being used widely, (Ye Zuxun, Lv Wen is medium, the progress [J] of ZnO voltage-sensitive ceramic liquid phase low-temperature sintering technology, computer and digital engineering, 2006,34 (4): 101 ~ 104).
But the ZnO voltage-sensitive ceramic by lqiuid phase sintering method prepares,, because crystal grain is less, cause its pressure sensitive voltage higher, limited its further application in the low pressure direction.
Summary of the invention
The object of the present invention is to provide a kind of low pressure bismuth is zinc oxide pressure-sensitive ceramic resistive material and low-temperature sintering method thereof.Adding appropriate B
2O
3After, not only make ZnO-Bi
2O
3The sintering temperature that is pressure sensitive reduces, and its comprehensive electrical performance also can be improved.Pressure-sensitive field intensity can be adjusted by changing component and sintering process in 163V/mm ~ 565V/mm scope: powerful during in 300V/mm then and there, nonlinear factor is greater than 50, and leakage current is all less than 0.1 μ A; When field intensity during less than 300V/mm, nonlinear factor α〉30, leakage current I
L＜1 μ A.The present invention not only provides effective means for the low-temperature sintering piezoresistive material, also for using fine silver to create condition as inner electrode in the preparation of multilayer chip varistor spare.
Technical scheme of the present invention is such: five yuan of a kind of low-leakage currents are the ZnO pressure-sensitive ceramic material, and material prescription is: mol ratio is ZnO, the Bi of (100-y-z-m-n) %:y%: z%: m%: n%
2O
3, Co
2O
3, SnO
2, B
2O
3, y=0 ~ 2 wherein, z=0 ~ 1, m=0 ~ 2, n=0 ~ 2.
It is the preparation method of ZnO pressure-sensitive ceramic material that the present invention also provides five yuan of low-leakage currents, is solid-phase synthesis, and step is as follows: A, according to the stoichiometric ratio of general formula, prepare burden; B, ball milling mix, drying; C, granulation; D, moulding, plastic removal; E, 850-950 ℃ sintering, insulation 2-5h.
Foregoing preparation method, preferably scheme is, step B ball milling 4-8 hour.
Foregoing preparation method, preferred scheme is that the described drying of step B is for putting into baking oven 80-120 ℃ of oven dry.
Foregoing preparation method, preferred scheme are that step C granulation refers to directly add polyvinyl alcohol (PVA) binding agent in the raw material of oven dry, is pressed into thin discs.
Foregoing preparation method, preferred scheme is that the add-on of polyvinyl alcohol (PVA) binding agent is the 2-6% of raw material total mass.
Foregoing preparation method, preferred scheme are that the plastic removal of step D refers to the thin discs after moulding at 650 ℃ of insulation 1-3 hour, the PVA binding agent of draining.
It is the pressure-active element of ZnO pressure-sensitive ceramic material preparation that the present invention also provides five yuan of low-leakage currents.
The present invention relates to a kind of low-leakage current ZnO-Bi
2O
3Series pressure-sensitive ceramic material and low-temperature sintering method thereof are comprised of following steps: (1) chooses zinc oxide (ZnO), bismuthous oxide bismuth trioxide (Bi
2O
3), cobalt sesquioxide (Co
2O
3), tindioxide (SnO
2), boron trioxide (B
2O
3) be starting material; (2) take respectively ZnO, Bi for (100-y-z-m-n) %:y%: z%: m%: n% in molar ratio
2O
3, Co
2O
3, SnO
2, B
2O
3Starting material, y=0 ~ 2 wherein, z=0 ~ 1, m=0 ~ 2, n=0 ~ 2; 3) starting material that (2) taken are put into respectively different ball grinders, ball milling 4-8 hour; (4) after ball milling, slurry is put into baking oven 80-120 ℃ of oven dry; (5) directly add polyvinyl alcohol (PVA) binding agent (add-on of PVA is the 4-6% of raw material total mass) in the raw material of oven dry, granulation, being pressed into diameter under 80-120MPa pressure is 12mm, thickness is the thin discs of 0.8-1.5mm; The thin discs that (6) will suppress is at 650 ℃ of insulation 1-3 hour, the PVA binding agent of draining; (7) with the ZnO-Bi after process (6)
2O
3Be that sample is at 2-5 hour sintering of 850-950 ℃ of insulation; (8) with the ZnO-Bi after (7) sintering
2O
3Series pressure-sensitive ceramic sample upper and lower surface stamps silver electrode; (9) with the ZnO-Bi after process (8)
2O
3The series pressure-sensitive ceramic sample carries out Properties Testing.
Aforementioned ZnO-Bi
2O
3The preparation method of series pressure-sensitive ceramic material, the ball mill that described " ball milling " uses can be planetary ball mill, sand mill or industrial ceramic powder blending device, as the KEQ type frequency conversion omnidirectional planetary ball mill that uses Qidong City grand Hong Yiqishebeichang in Jiangsu Province's to produce, the RT001 type horizontal sand mill that scholar special mechanical ﹠ electronic equipment corporation, Ltd in Shanghai produces, the ZSH mixer that Shanghai Kairi Electromechanic Device Manufacturing Co., Ltd. produces etc. all can reach requirement.
The characteristic of the pressure-sensitive ceramic resistor by the preparation of above-mentioned technique is:
1., without powder pre-synthesis process, only need relatively low calcining temperature (850 ℃) can prepare the ZnO-Bi of better performances
2O
3The series pressure-sensitive ceramic material, greatly reduce energy expenditure;
2. such ZnO-Bi
2O
3The series pressure-sensitive ceramic material has relatively large potential gradient scope, E
1mA=163V/mm ~ 565V/mm;
3. such ZnO-Bi
2O
3The series pressure-sensitive ceramic material can obtain relatively high nonlinear factor, α＞50;
4. such ZnO-Bi
2O
3Series pressure-sensitive ceramic material major part has relatively low leakage current, I
L＜0.1 μ A;
5. such ZnO-Bi
2O
3In the series pressure-sensitive ceramic material, B
2O
3Mix and reduced pressure-sensitive field intensity and nonlinear factor, reduced sintering temperature.
6. such ZnO-Bi
2O
3In the series pressure-sensitive ceramic material, SnO
2Mix and increased pressure-sensitive field intensity, greatly reduce leakage current.
7. such ZnO-Bi
2O
3In the series pressure-sensitive ceramic material, with the rising of sintering temperature, potential gradient reduces, and in order to guarantee it, has higher nonlinear factor and lower leakage current, SnO
2The mol ratio that accounts in raw material increases.
8. making ZnO-Bi that present method can be relatively large
2O
3The series pressure-sensitive ceramic material, suitable industrial production.
In a word, the present invention explores a kind of low-temperature sintering preferably and prepares different potentials gradient ZnO-Bi
2O
3The material of series pressure-sensitive ceramic and technique; For preparing low cost, high-performance, low electric potential gradient ZnO-Bi
2O
3The series pressure-sensitive ceramic material has been created condition; Exist application prospect widely in industrial production.
Description of drawings
Fig. 1 is technical solution of the present invention embodiment process flow diagram.
Fig. 2 is the XRD analysis collection of illustrative plates of voltage-sensitive ceramic of the present invention.
Embodiment
Further illustrate characteristics of the present invention below by embodiment and accompanying drawing, apparent, embodiment only, for the explanation goal of the invention, limits absolutely not the present invention.
Embodiment 1:
With ZnO, Bi
2O
3, Co
2O
3, SnO
2And B
2O
3For raw material, according to mol ratio (98-
x) %ZnO, 0.7%Bi
2O
3, 0.8%Co
2O
3, 0.5%B
2O
3,
xMol%SnO
2(
x=0.1,0.2,0.3).Routinely solid-phase synthesis prepare burden, ball milling mixing 8h, drying, add 3wt%PVA binding agent, moulding, plastic removal (650 ℃, 1h), sintering temperature is 850 ℃, insulation 2h, form voltage-sensitive ceramic, after the ceramic plate two ends of burning till are made silver electrode, test result such as following table one.
Table one: embodiment 1 sample electric property
| SnO 2Addition | Pressure-sensitive field intensity E/mm | Leakage current μ A | Nonlinear factor α |
| 0.1mol% | 543 | <0.1 | 59.86 |
| 0.2mol% | 535 | <0.1 | 59.59 |
| 0.3mol% | 565 | <0.1 | 56.10 |
Embodiment 2:
With ZnO, Bi
2O
3, Co
2O
3, SnO
2And B
2O
3For raw material, according to mol ratio (98-
x) %ZnO, 0.7%Bi
2O
3, 0.8%Co
2O
3, 0.5%B
2O
3,
xMol%SnO
2(
x=0.2,0.3).Routinely solid-phase synthesis prepare burden, ball milling mixing 8h, drying, add 3wt%PVA binding agent, moulding, plastic removal (650 ℃, 1h), sintering temperature is 900 ℃, insulation 4h, form voltage-sensitive ceramic, after the ceramic plate two ends of burning till are made silver electrode, test result such as following table two.
Table two: embodiment 2 sample electric properties
| SnO 2Addition | Pressure-sensitive field intensity E/mm | Leakage current μ A | Nonlinear factor α |
| 0.2mol% | 339 | <0.1 | 50.41 |
| 0.3mol% | 409 | <0.1 | 52.01 |
Fig. 2 is that (component is 97.7mol%ZnO, 0.7mol%Bi for the XRD analysis collection of illustrative plates of voltage-sensitive ceramic of the present invention
2O
3, 0.8mol%Co
2O
3, 0.5mol%B
2O
3, 0.3mol%SnO
2).
Can be found out by Fig. 2 and table two: burn till rear pottery except principal crystalline phase ZnO, also have a small amount of Bi
2Sn
2O
7The Jiao Lvshi phase, Bi
2Sn
2O
7The existence of Jiao Lvshi phase has not only increased pressure-sensitive field intensity but also has reduced leakage current.
Embodiment 3:
With ZnO, Bi
2O
3, Co
2O
3, SnO
2And B
2O
3For raw material, according to mol ratio (97.5-
x) %ZnO, 0.7%Bi
2O
3, 0.8%Co
2O
3, 1.0%SnO
2,
xMol%B
2O
3, (
x=0.5,1.0. 1.5).Solid-phase synthesis is prepared burden routinely, ball milling mixing 8h, drying, (650 ℃, 1h), sintering temperature is 950 to add 3wt%PVA binding agent, moulding, plastic removal
℃, insulation 5h, form voltage-sensitive ceramic, after the ceramic plate two ends of burning till are made silver electrode, and test result such as following table three.
The electric property of table three: embodiment 3 samples
| B 2O 3Addition | Pressure-sensitive field intensity E/mm | Leakage current μ A | Nonlinear factor α |
| 0.5mol% | 232 | 0.1 | 40.94 |
| 1.0mol% | 163 | 0.2 | 37.21 |
| 1.5mol% | 298 | 0.6 | 34.65 |
A class different potentials gradient ZnO-Bi provided by the invention
2O
3The series pressure-sensitive ceramic material, burn till rear pottery except principal crystalline phase ZnO, also has a small amount of Bi
2Sn
2O
7The Jiao Lvshi phase.B
2O
3Mix and reduced pressure-sensitive field intensity and nonlinear factor, reduced sintering temperature.In body series, SnO
2Mix and increased pressure-sensitive field intensity, greatly reduce leakage current,, by in material claimed in claim 1, add SnO
2With do not contain SnO
2Component is compared, and field intensity has increased 20 ~ 100%, and the leakage current scope obviously is reduced to less than 0.1 μ A by 0.1 ~ 1.0 μ A.
Disclosed by the invention is a kind of potential gradient adjustable ZnO-Bi between 163V/mm ~ 565V/mm
2O
3Be piezoresistive material and low-temperature sintering method thereof.Material is comprised of zinc oxide, bismuthous oxide bismuth trioxide and other additive, and wherein the content of zinc oxide is 92 ~ 98.5mol%, and the content of bismuthous oxide bismuth trioxide is 0.3% ~ 2mol%Bi
2O
3, residual content is the additives such as Co, Sn, B element., according to formula, after taking corresponding starting material, utilize solid sintering technology to obtain corresponding pressure-sensitive ceramic material 850 ~ 950 ℃ of insulations after 2-5 hour.The ZnO-Bi that the present invention obtains
2O
3The pressure-sensitive field intensity that is piezoresistive material is 163V/mm ~ 565V/mm, and is powerful when 300V/mm then and there, and nonlinear factor is greater than 50, and leakage current is all less than 0.1 μ A; When field intensity during less than 300V/mm, nonlinear factor α〉30, leakage current I
L＜1 μ A.And sintering temperature is low, and over-all properties is good; In addition, it is simple that preparation method of the present invention has technique, and energy consumption is little, and the advantages such as environmental protection are with a wide range of applications.
The present invention obtains the subsidy of national " 863 " plan (2013AA030501), Shandong Province's Natural Science Fund In The Light (ZR2012EMM004), Shandong Province doctor fund (No. BS2010CL010).
Claims (8)
1. five yuan of low-leakage currents are the ZnO pressure-sensitive ceramic material, it is characterized in that, material prescription is: mol ratio is ZnO, the Bi of (100-y-z-m-n) %:y%: z%: m%: n%
2O
3, Co
2O
3, SnO
2, B
2O
3, y=0 ~ 2 wherein, z=0 ~ 1, m=0 ~ 2, n=0 ~ 2.
2. five yuan of low-leakage currents claimed in claim 1 are the preparation method of ZnO pressure-sensitive ceramic material, it is characterized in that, be solid-phase synthesis, step is as follows:
A, according to the stoichiometric ratio of general formula, prepare burden;
B, ball milling mix, drying;
C, granulation;
D, moulding, plastic removal;
E, 850-950 ℃ sintering, insulation 2-5h.
3. preparation method claimed in claim 2, is characterized in that, step B ball milling 4-8 hour.
4. preparation method claimed in claim 2, is characterized in that, the described drying of step B is for putting into baking oven 80-120 ℃ of oven dry.
5. preparation method claimed in claim 2, is characterized in that, step C granulation refers to directly add polyvinyl alcohol (PVA) binding agent in the raw material of oven dry, is pressed into thin discs.
6. preparation method claimed in claim 5, is characterized in that, the add-on of polyvinyl alcohol (PVA) binding agent is the 2-6% of raw material total mass.
7. preparation method claimed in claim 2, is characterized in that, the plastic removal of step D refers to the thin discs after moulding at 650 ℃ of insulation 1-3 hour, the PVA binding agent of draining.
8. be the pressure-active element of ZnO pressure-sensitive ceramic material preparation by five yuan of low-leakage currents claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103066612A CN103387389A (en) | 2013-07-22 | 2013-07-22 | Five-membered ZnO voltage-sensitive ceramic material having low leak current and sintering method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103066612A CN103387389A (en) | 2013-07-22 | 2013-07-22 | Five-membered ZnO voltage-sensitive ceramic material having low leak current and sintering method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103387389A true CN103387389A (en) | 2013-11-13 |
Family
ID=49531823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013103066612A Pending CN103387389A (en) | 2013-07-22 | 2013-07-22 | Five-membered ZnO voltage-sensitive ceramic material having low leak current and sintering method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103387389A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298121A (en) * | 2016-08-18 | 2017-01-04 | 陆川县华鑫电子厂 | A kind of zinc oxide varistor and preparation method thereof |
| CN109065307A (en) * | 2018-06-28 | 2018-12-21 | 南京先正电子股份有限公司 | It is a kind of to minimize big discharge capacity piezoresistor and preparation method thereof |
| CN110615677A (en) * | 2019-09-30 | 2019-12-27 | 厦门松元电子有限公司 | Low-temperature sintered zinc oxide varistor ceramic material, preparation method thereof and preparation method of resistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103073302A (en) * | 2013-01-21 | 2013-05-01 | 聊城大学 | Low-temperature sintering method of high potential gradient voltage-sensitive ceramic material |
-
2013
- 2013-07-22 CN CN2013103066612A patent/CN103387389A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103073302A (en) * | 2013-01-21 | 2013-05-01 | 聊城大学 | Low-temperature sintering method of high potential gradient voltage-sensitive ceramic material |
Non-Patent Citations (1)
| Title |
|---|
| 周东祥等: "低温烧结非线性Zn-Bi/Sn系压敏瓷料的研究", 《电子元件与材料》, vol. 21, no. 3, 31 March 2002 (2002-03-31), pages 18 - 19 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298121A (en) * | 2016-08-18 | 2017-01-04 | 陆川县华鑫电子厂 | A kind of zinc oxide varistor and preparation method thereof |
| CN109065307A (en) * | 2018-06-28 | 2018-12-21 | 南京先正电子股份有限公司 | It is a kind of to minimize big discharge capacity piezoresistor and preparation method thereof |
| CN110615677A (en) * | 2019-09-30 | 2019-12-27 | 厦门松元电子有限公司 | Low-temperature sintered zinc oxide varistor ceramic material, preparation method thereof and preparation method of resistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104671771B (en) | A kind of high-voltage gradient zinc oxide base voltage sensitive resistor material and preparation method thereof | |
| CN103073302A (en) | Low-temperature sintering method of high potential gradient voltage-sensitive ceramic material | |
| CN101239819B (en) | Method for preparing sheet type multilayer zinc oxide pressure-sensitive electric resistance ceramic powder | |
| CN100583317C (en) | Low electric resistivity high B values negative temperature coefficient thermistor chip and manufacturing method therefor | |
| CN103693953B (en) | Middle and low voltage zinc oxide varistor and preparation method thereof | |
| CN101702358B (en) | High voltage varistor and preparation method thereof | |
| CN104944935A (en) | ZnO varister ceramic and preparation method thereof | |
| CN104003709A (en) | Zinc oxide-based pressure-sensitive ceramic material for lightning arrester as well as preparation method and application of material | |
| CN104478428A (en) | Zinc oxide piezoresistor material with high electric potential gradient | |
| CN102617126B (en) | Low-temperature sintered zinc oxide voltage dependent resistance material and preparation method thereof | |
| CN103387389A (en) | Five-membered ZnO voltage-sensitive ceramic material having low leak current and sintering method thereof | |
| CN102964119B (en) | Low-temperature-sintered BiFeO3-based high-performance negative-temperature-coefficient thermosensitive ceramic material and preparation method thereof | |
| CN101284730A (en) | Non-bismuth additive ZnO Low-voltage Varistor Ceramics and method for making same | |
| CN101759431B (en) | Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof | |
| CN103073267B (en) | NTC (negative temperature coefficient) thermal-sensitive material with low resistivity and high B-value and preparation method thereof | |
| CN101246770B (en) | Preparation of high-potential gradient ZnO thick film piezoresistor | |
| CN103011774B (en) | High-sensitivity piezoelectric ceramic material, and preparation method and application thereof | |
| CN110423110A (en) | A kind of ultra-high non-linear ZnO-Bi2O3Base voltage-sensitive ceramic and preparation method thereof | |
| CN104347202A (en) | Preparation method of thick film negative temperature coefficient resistance paste | |
| CN103910524B (en) | Tin ash piezoresistive material of a kind of rare-earth oxide modified and preparation method thereof | |
| CN103724009A (en) | Low-temperature sintering chip type zinc oxide varistor and preparation method thereof | |
| CN101286393B (en) | Stratified structure low-voltage ZnO piezoresistor preparation method | |
| CN102030522A (en) | Low-equilibrium temperature ZnO-Bi2O3 series voltage-sensitive ceramic dielectric | |
| CN100595849C (en) | A low voltage/high non-linear index slice voltage sensitive resistor and its making method | |
| CN102173778A (en) | High-performance Pr series ZnO voltage sensitive ceramic material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131113 |