CN103380327A - 具有远置光致发光转换层的led白光源 - Google Patents
具有远置光致发光转换层的led白光源 Download PDFInfo
- Publication number
- CN103380327A CN103380327A CN2012800091616A CN201280009161A CN103380327A CN 103380327 A CN103380327 A CN 103380327A CN 2012800091616 A CN2012800091616 A CN 2012800091616A CN 201280009161 A CN201280009161 A CN 201280009161A CN 103380327 A CN103380327 A CN 103380327A
- Authority
- CN
- China
- Prior art keywords
- light
- mentioned
- material layer
- lighting device
- transition material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 86
- 230000005855 radiation Effects 0.000 claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 claims description 75
- 238000001816 cooling Methods 0.000 claims description 26
- 230000007704 transition Effects 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 21
- 239000012780 transparent material Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 80
- 238000000576 coating method Methods 0.000 description 18
- -1 beryllium aluminate Chemical class 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 241001025261 Neoraja caerulea Species 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000002223 garnet Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 229910052747 lanthanoid Inorganic materials 0.000 description 5
- 150000002602 lanthanoids Chemical class 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- VDRSDNINOSAWIV-UHFFFAOYSA-N [F].[Si] Chemical compound [F].[Si] VDRSDNINOSAWIV-UHFFFAOYSA-N 0.000 description 2
- ZOLPSCMPTIXCMK-UHFFFAOYSA-N [Gd].[Y].[Ce] Chemical compound [Gd].[Y].[Ce] ZOLPSCMPTIXCMK-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- DVMSVWIURPPRBC-UHFFFAOYSA-N 2,3,3-trifluoroprop-2-enoic acid Chemical class OC(=O)C(F)=C(F)F DVMSVWIURPPRBC-UHFFFAOYSA-N 0.000 description 1
- LDSKOSCPBKZJCO-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-n-[n'-[(4-methylphenyl)methyl]carbamimidoyl]acetamide Chemical compound C1=C(OC)C(OC)=CC=C1CC(=O)NC(N)=NCC1=CC=C(C)C=C1 LDSKOSCPBKZJCO-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 241001662443 Phemeranthus parviflorus Species 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000004830 Super Glue Substances 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000004110 Zinc silicate Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UZQSJWBBQOJUOT-UHFFFAOYSA-N alumane;lanthanum Chemical compound [AlH3].[La] UZQSJWBBQOJUOT-UHFFFAOYSA-N 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000002314 autoradiolysis reaction Methods 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical group OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910001602 chrysoberyl Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007739 conversion coating Methods 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005370 electroosmosis Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000012053 enzymatic serum creatinine assay Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- FGBJXOREULPLGL-UHFFFAOYSA-N ethyl cyanoacrylate Chemical compound CCOC(=O)C(=C)C#N FGBJXOREULPLGL-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- ZYMKZMDQUPCXRP-UHFFFAOYSA-N fluoro prop-2-enoate Chemical compound FOC(=O)C=C ZYMKZMDQUPCXRP-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002604 lanthanum compounds Chemical class 0.000 description 1
- LQFNMFDUAPEJRY-UHFFFAOYSA-K lanthanum(3+);phosphate Chemical compound [La+3].[O-]P([O-])([O-])=O LQFNMFDUAPEJRY-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 210000000498 stratum granulosum Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
- 235000019352 zinc silicate Nutrition 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K2/00—Non-electric light sources using luminescence; Light sources using electrochemiluminescence
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
- F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/0066—Reflectors for light sources specially adapted to cooperate with point like light sources; specially adapted to cooperate with light sources the shape of which is unspecified
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
- F21V29/505—Cooling arrangements characterised by the adaptation for cooling of specific components of reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/0025—Combination of two or more reflectors for a single light source
- F21V7/0033—Combination of two or more reflectors for a single light source with successive reflections from one reflector to the next or following
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
- F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
本发明涉及白光源,基于具有远置荧光粉转换层的半导体发光二极管。本发明的课题:一种包括散热基座和发光二极管的灯具,散热基座有辐射光出射孔,发光二极管固定于该孔的边缘,辐射光转换层(以一层凹面的荧光粉材料的形式)设置在远离所述的发光二极管的位置,荧光粉材料层的空腔朝向发光二极管和该出射孔。当发光二极管发射的初级辐射光入射在该转换层的表面上时,反射的初级辐射光和荧光粉材料的二级辐射光混合从而形成白光,从散热基座上的出射孔射出,与此同时,穿透转换层的初级辐射光和荧光粉材料的二级辐射光混合从而形成白光,从荧光粉材料层射出。该转换层的凹面可以是被截短的回转椭面,尤其是球面或者抛物面,其主轴垂直于散热基座上的出射孔的平面,其凹面也可以是被该出射孔平面截短的圆柱面。
Description
技术领域
本发明涉及电气电子设备,尤其是涉及基于半导体发光二极管(LED)的光源,具体涉及基于采用光致发光荧光粉转换的发光二极管(LED)的白光源。
背景技术
固态照明技术正开始占领白光照明市场,这得益于高效LED开发的最新进展,尤其是氮化物(InGaN)及业内所有已知的白光源可实现最高的照明效率。LED解决方案在照明设备中得到广泛应用,例如线性照明装置和街道照明装置,其照明装置相对较大,高热的LED灯可分散分布,实现高效散热。鉴于LED替代灯在解决节能问题上的广阔前景,开发具有小形状因子和高光通量的LED替代灯来取代标准白炽灯和卤素灯是目前最关键的科学技术课题之一。然而,由于此类灯具安装控制电子器件(驱动器)的空间有限且用于LED散热的表面面积相对较小,这导致LED解决方案大大受到制约。通常,白光LED包括一个涂覆有YAG:Ce荧光粉的蓝光LED。大功率(1瓦以上)蓝光LED效率约为30-45%,每瓦输入功率中约有550-700毫瓦用于元件加热。此外,业内认为白光LED内的荧光粉将蓝光转换成黄光时,约有20%的入射光能消耗在荧光粉加热上。技术参数表明温度在25-125℃时蓝光LED的辐射功率损耗约为7%,而同一温度下白光LED的功率损耗约为20%。因此,大功率白光LED对热量和光通量有诸多限制。
发明内容
本发明旨在提供具有小形状因子的LED灯来取代标准灯,其中,已知技术解决方案的难题已经攻克。
对于取代标准白光灯的任何一种LED灯,其结构均基于LED芯片。将LED芯片发出的辐射光和不同的光色(例如蓝光、绿光和红光或者蓝光和橙色光等等)混合可以得到白光。
然而,近年来具有光致发光荧光粉转换层的LED白光源已经成为最广泛的光源,荧光粉转换层发出黄光或者橙色(红色)光,同时吸收LED芯片的蓝光或紫外线。图1中的示意图阐述了这类白光源的工作原理。
此装置包括一个LED芯片和光致发光荧光粉转换介质,LED芯片发出波长相对较短的初级辐射光,此介质受上述波长相对较短的初级辐射光照射,经特定的波长相对较短的辐射光照射之后,此介质受到激发并发出波长相对较长的二级辐射光。在具体的实施例中,将LED芯片放置于聚合物基体内的有机荧光粉和/或无机荧光粉(光致发光荧光粉)中,可将LED芯片发出的单色蓝光或紫外线转换为白光。
图2显示了一种已知的具有光致发光荧光粉转换的LED白光源,详见美国第US6351069号专利。
白光源(110)包括一个氮化物LED芯片(112),受到激发时,芯片发出初级辐射蓝光。LED芯片(112)置于反光杯(114)的导电支架上,与导体(116和118)电连接。导体(116和118)为LED芯片(112)提供电力。LED芯片(112)上覆盖有透明树脂层(120),树脂层内含转换材料(122),转换材料可转换LED辐射光的波长。可根据转换材料(122)产生的二级辐射光所需的光谱分布选择用以形成树脂层(120)的转换材料类型。LED芯片(112)和荧光层(120)由一片透镜(124)罩住。透镜(124)通常由透明环氧树脂或硅胶制成。使用白光源时,向LED芯片(112)施加电压,其中,该芯片上表面发出初级辐射光。LED芯片发出的初级辐射光部分被树脂层(120)内的转换材料(122)吸收。之后,转换材料(122)在吸收初级辐射光后作出响应,发出二级辐射光,即具有更长峰值波长的转换光。剩余的未吸收的初级辐射光与二级辐射光混合,从转换层透射而出。透镜(124)将未吸收的初级辐射光与二级辐射光引导向按箭头(126)指示的大体方向,即为LED出射光。因此,LED出射光是一种复合光,由LED芯片(112)发出的初级辐射光和转换层(120)发出的二级辐射光组成。也可以对转换材料进行配置,因此可以实现只有一小部分初级辐射光或全部初级辐射光留在装置内,例如发出初级紫外光的LED芯片与发出二级可见光的一种或多种转换材料结合时即是如此。
前文提及的本领域中已知的装置(其中,在LED表面形成一层光致发光荧光粉层)存在几个不足。因为根据辐射光透射光致发光荧光粉层的传播角的不同,光程长显著变化,所以光致发光荧光粉与LED表面直接机械、光学和热接触时很难实现颜色均匀度。此外,高热LED的高温会改变光致发光荧光粉的色坐标,也可能导致荧光粉劣化。
为了消除上述缺点,我们提出在远离LED的位置设置一个波长转换层的白光源,其工作原理如图3所示。
根据此原理制成的照明装置以及例如在美国第6600175(B1)号专利中描述的照明装置,如图4所示。
此白光源包括一个外壳(207),此外壳由透明介质(211)成型而成,具有一个内部空间。该透明介质(211)可由任何可以透射光线的适当材料成型而成,例如透明聚合物或玻璃。透明介质(211)的内部空间包含一个置于基座(214)上的发光二极管(LED)(213)芯片。第一电触头(216)和第二电触头(217)分别与LED(213)芯片的发射端(218)和背侧(219)相连接,且通过导线(212)与第一电触头(216)旁边的LED的发射端(218)相连接。透光介质(211)与荧光和/或磷光元件或二者混合物(即光致发光荧光介质)结合在一起,光致发光荧光介质将LED(213)的发射端(218)发出的辐射光转换成白光。光致发光荧光粉散布在透明介质(211)的外壳(207)内和/或以薄膜涂层(209)的形式布置在外壳(207)的内壁表面上。另外,光致发光荧光粉可以是组装(未显示)外壳外壁层上的一层涂层,前提是此外壳专门用于此环境中,而且这种外涂层可以得到理想的维护(例如外涂层不会遭受磨蚀或劣化)。例如,可以将光致发光荧光粉散布在聚合物或玻璃熔体内,外壳由聚合物或玻璃熔体成型而成,可实现外壳成分均匀并确保外壳整个表面的光输出。
具有远置圆柱形转换层的细长型白光LED照明装置在业内众所周知,如美国第US7618157B1号专利所述。其装置示意图如图5所示。此照明装置(310)包括一个线性散热座(312)、多个LED(314)和发光圆顶罩(316),LED(314)沿着散热座长度方向安装在散热座(312)上,发光圆顶罩(316)安装在散热座(312)上,与LED灯组(314)平行,其中,发光圆顶罩(316)的半圆部分(318)位于与LED灯组(314)相对的位置,其包括一层光致发光荧光粉(320),LED灯组发出的光线会激发光致发光荧光粉(320)。散热座(312)由导热材料制成,例如铝。发光圆顶罩(316)由透明材料制成,例如玻璃或塑料。光致发光荧光粉(320)可以用作涂层,涂覆在圆顶罩的内侧或者添加在涂层材料中。平面部分(326)不含光致发光荧光粉,在LED灯组两侧与散热座相连,其具有内部反光面(328),例如,反光面可以是铝涂层,用以将LED灯组(314)发出的光线反射至圆顶部分(318)。
转换层可包含光致发光荧光粉材料、量子点材料或这类材料的组合物,而且还可包含基质透明材料,其中的荧光粉材料和/或量子点材料分散分布。
众所周知,包含光致发光荧光粉材料的涂层可以传导、吸收、反射和分散发射过来的入射光。此涂层在分散入射光的同时,也可以传导、吸收和反射一些散射光。
基于这个原因,上述已知的发明所共有的一个缺点是在LED辐射的影响下光致发光荧光粉颗粒受激发出的辐射光和反射的LED辐射光将不可避免部分被光致发光荧光粉层以及该装置内部元件吸收,这样就降低了白光源的效率。
波长约为470纳米的蓝光辐射可激发YAG:Ce光致发光荧光粉,转换成白光成黄色波长范围的辐射光。Yamada[1]和Narendran[2]确定了YAG:Ce光致发光荧光粉转换层反射光和透射光的比值。Narendran试验证明在这种情况下转换层发射和反射的光中超过60%回射至激发源,并且这种光中很大一部分在LED组件内部损失掉了[2]。在[3]中,据证明,即使以光折射率为1.8的YAG:Ce光致发光荧光粉为例,它是将光折射率为1.8的YAG:Ce光致发光荧光粉混合在光折射率为1.6的环氧树脂中,其光致发光荧光粉的密度为8毫克/平方厘米,使其能够创造由蓝光和黄光组合而成的平衡的白光,其反射光和透射光的比例分别是53%和47%,而对于只含黄光的情况来说,其反射光和透射光的比例分别是55和45%。
一旦光致发光荧光粉受到LED辐射光的照射,其表面就产生辐射光,因此,在同等条件下,通过将光致发光荧光粉表面产生的辐射光引导至LED光源的出射孔,直至远置转换层,可以显著地提高LED转换白光源的光通量和最大可能的效率。
第US7293908B2号专利中提出了类似的技术解决方案,它是在具有侧光辐射耦合的照明***的多个申请保护的实施例其中之一中提出,其根据本专利完成,其中包括一层设置在远离LED位置的转换层,该转换层位于反光镜上方。
此装置与根据本发明制造的装置最为相似,因此将其选为原型。
具有侧光辐射耦合的白光源是按照本专利实施的,其工作原理如图6所示。图6显示了所申请保护的具有侧光辐射耦合的照明***多个实施例其中之一的横截面。
具有侧光辐射耦合的照明***包括一个LED(402)、第一反光镜(404)、第二反光镜(406)、出射孔(412)、转换层(602)、附加透明覆盖层(408)及辅助构件,辅助构件支承并分隔第一反光镜(404)和第二反光镜(406)。辅助构件包括平面透明元件(502)、侧支架(504)和基座(506)。侧支架(504)最好为透明或反光材料。第一反光镜(404)固定在基座(506)上。第二反光镜(406)固定在平面透明元件(502)上。转换层(602)位于第二反光镜(406)表面上,它至少将LED(402)有源区发射的部分初级辐射光转换成具有波长不同于初级辐射光波长的辐射光。
为便于说明,我们可以考虑光束414、415、416,这些光束阐释了具有侧光辐射耦合的照明***的工作原理。LED(402)有源区发射的第一颜色光束414被导向LED(402)的输出表面。第一颜色光束414穿透LED(402)的输出表面,随后被导向透明覆盖层(408)。接着第一颜色光束414穿透透明覆盖层(408)并被导向转换层(602),转换层将第一颜色光束414转换成不同颜色的第二颜色光束415。第二颜色光可以从波长转换点朝任何方向发射。第二颜色光束415穿透透明覆盖层(408),接着穿过出射孔(412)被导向第一反光镜(404)。第二颜色光束416经第一反光镜(404)反射,然后被导向平面透明元件(502)上。第二颜色光束416穿透平面透明元件(502),即形成具有侧光辐射耦合的照明***。
此***的缺点是孔径损失大且在辅助构件的边界和反光镜上的光损失较多。
本发明试图克服另一种已知的探照灯型白光源(参见美国第US7810956B2号专利中所描述)的这些缺点。
图7是一种探照灯的横截面示意图,阐释了该装置的结构布置和工作原理,此探照灯根据美国第US7810956B2号专利中所申请保护的该发明的多个实施例之一。光源(730)置于紧固件(734)和附加散热座(736)之上。可为散热座(736)加装散热片,如图7所示。光源(730)发出的光以及环绕光源(730)的反光镜(732)反射的光辐射至光学板(738)内。波长转换层(742)与光源(730)分隔放置,因此可以接收光源(730)发出的光。附加散热座(744)可以冷却波长转换层(742)。聚光元件(740)使光线准直。作为光源(730),LED产生可被利用的短波光线,例如蓝光或紫外光。光源(730)可置于附加紧固件(734)之上并固定在附加散热座(736)上。光学板(738)可成型加工而成,使其能够将光线引导至聚光元件(740)。例如,光学板侧面(748)可加工成倾斜面或弯曲面,形成全内反射,将光线引导至聚光元件(740)。
该***的缺点是孔径损失大且在光学板以及光源、反光镜和转换层的边界上的光损失较多,大大降低了该***的效率。此外,从准直光学***射出的光束相当纤细,因此使用此照明装置取代具有小形状因子的标准灯是不可接受的,由于标准灯具有足够大的发射光束孔径角,即使是采用卤素灯。
本发明根本目标在于提供具有远置转换层的最大效率LED白光源,其具有高颜色均匀度和显色性,光束的孔径角宽且照明装置的形状因子小。
本发明提出的照明装置包括具有一个或多个LED的初级辐射源、具有平面周缘部(前述LED固定其上)的散热基座、具有反光面的反光镜(面向LED)以及转换层,转换层设置在远离LED的位置,将初级辐射光转换成二级辐射光。指定的问题得到解决,因此用于光辐射耦合的散热基座具有出射孔(其边缘与置于散热基座上的LED非常靠近)、转换层(受LED照射)的特定表面以及具有凹形的反光面,其凹面面向初级辐射源和出射孔。
图8为所述照明装置的横截面示意图,图中阐释了本发明的公开。
此照明装置包括初级辐射源、散热基座(2)及转换层(5),初级辐射源有一个或多个LED(1),散热基座(2)上有出射孔(3)和周缘部(4),前述LED(1)固定在周缘部(4)上,其中,转换层(5)将初始辐射光(6)转换成二级辐射光(7),转换层(5)有面向LED(1)的凸面(8)和第二凸面(9),且在远离LED(1)的位置设置转换层(5)。
此照明装置功能如下:LED(1)的初始辐射光(6)到达转换层(5)的凸面表面(8),然后部分从凸面表面(8)反射,透过散热基座(2)的出射孔(3)射出,部分从光致发光荧光粉颗粒层的表面反射,在转换层(5)中被分散,初始辐射光(6)部分被转换层(5)材料所吸收,转换成二级辐射光(7),与此同时,一部分初始辐射光(6)已经到达第二凸面表面(9),与转换层(5)产生的一部分二级辐射光(7)一同向外部射出,二者混合形成白光。在这种情况下,一部分初始辐射光(6)透过此照明装置的出射孔(3)从转换层(5)射出,然后与二级辐射光(7)混合,形成白光。白光的光谱分布由转换层材料的属性决定,主要由其成分、光致发光荧光粉色散特性以及转换层的厚度决定。转换层的厚度调节范围在5up到500μm之间,使得穿过出射孔的白光和从转换层(9)的外表面射出的白光的色坐标彼此更加接近成为可能。
光致发光荧光粉通常是掺杂离子态稀土元素(镧系元素)的无机光学材料,或者也可以是掺杂例如铬、钛、钒、钴或钕等元素离子的无机光学材料。镧系元素为镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱和镥。无机光学材料包括(但不限于):蓝宝石(氧化铝),砷化镓(GaAs),金绿宝石(铝酸铍),氟化镁(二氟化镁),磷化铟(InP),磷化镓(GaP)、钇铝石榴石(YAG或Y3Al5O12),含铽石榴石,钇铝氧化镧化合物,钇化合物,镧铝氧化镓,氧化钇(Y2O3),卤磷酸钙、卤磷酸锶或卤磷酸钡(Ca,Sr,Ba)5(PO4)3(Cl,F),铝酸铈锰复合物,磷酸镧(LaPO4),硼酸盐镧系材料((lanthanide)(Mg,Zn)B5O10),铝酸镁钡(BaMgAl10O17)复合物,硫化镓酸锶(SrGa2S4)复合物,(Sr,Мg,Ca,Ba)(Ga,Аl,In)2S4化合物,硫化锶(SrS)复合物,硫化锌(ZnS)复合物和氮化硅。
有几种典型的光致发光荧光粉可受到波长为250纳米左右的紫外线激发。一种典型的红色光致发光荧光粉是Y2O3:Eu+3。一种典型的黄色光致发光荧光粉YAG:Ce+3。典型的绿色光致发光荧光粉包括:CeMgAl11O19:Tb<3+>,(镧系元素)PO4:Ce+3,Tb+3和GdMgB5O10:Ce+3,Tb+3。典型的蓝色光致发光荧光粉是BaMgAl10O17:Eu+2和(Sr,Ba,Ca)5(PO4)3Cl:Eu+2。对于具有较长波长的激发LED,波长范围为400–450纳米或接近于此范围,典型光学无机材料包括钇铝石榴石(YAG或Y3Al5O12),含铽石榴石,氧化钇(Y2O3),钒酸钇(YVO4),硫化镓酸锶(SrGa2S4),(Sr,Мg,Ca,Ba)(Ga,Аl,In)2S4,硫化锶(SrS)和氮化硅。适用于波长范围为400-450纳米的激发LED的典型光致发光荧光粉包括:YAG:Ce+3,YAG:Ho+3,YAG:Pr+3,SrGa2S4:Eu+2,SrGa2S4:Ce+3,SrS:Eu+2和掺铕(Eu+2)氮化硅。
量子点材料为粒径小于30纳米的无机半导体微粒。典型的量子点材料包括(但不限于):硫化镉(CdS)、硒化镉(CdSe)、硒化锌(ZnSe)、砷化铟(InAs)、砷化镓(GaAs)和氮化镓(GaN)的微粒。量子点材料可吸收一个波长的光线,然后重新发射不同波长的光线,波长取决于粒子大小、粒子表面特性和无机半导体材料。
转换层既可以是一种光致发光荧光粉材料或量子点材料,也可以是光致发光荧光粉材料和量子点材料的混合物。如需发射的白光(高显色性)具有宽光谱范围,宜使用多于一种这类材料的混合物。获得具有高显色指数的暖白光的典型方法之一是将氮化铟镓(InGaN)LED的辐射光与黄、红色光致发光转换荧光粉混合物的辐射光相混合。转换层可以包括几种光致发光荧光粉,能够吸收LED的发射光并发出具有更长波长的光。例如,对于蓝光LED来说,其转换层可包括发射黄光的单一光致发光荧光粉,或者发射红、绿光的几种光致发光荧光粉。对于紫外LED来说,其转换层可包括发射蓝、黄光的多种光致发光荧光粉,或者发射蓝、绿、红光的多种光致发光荧光粉。为了控制该照明装置的混合出射光的色坐标和显色性,可加入辐射附加颜色光的光致发光荧光粉。
基质透明材料可包括:聚合物和无机材料。聚合物材料包括(但不限于):丙烯酸酯(acrylates)、聚碳酸酯(polycarbonate)、氟化丙烯酸(fluoroacrylate)、全氟丙烯酸酯(perfluoroacrylates)、氟代亚磷酸盐(fluorophosphinate)聚合物、氟硅聚合物(fluorosilicones)、含氟聚酰亚胺(fluoropolyimides)、聚四氟乙烯、氟硅聚合物(fluorosilicones)、溶胶凝胶(Sol-gel)、环氧树脂、热塑性塑料、热收缩塑料及硅树脂。含氟聚合物对于波长小于400纳米的紫外光和波长大于700纳米的红外光十分有用,这是因为含氟聚合物在这些波长范围内光吸收率低。典型的无机材料包括(但不限于):二氧化硅、光学玻璃和硫属化合物玻璃。
为了实现远置转换层的必要的机械耐久性,可将转换层光致发光荧光粉用作保形涂层,涂覆在一个辅助透明承载元件的内表面上,例如,可以通过采用粉磨、粘合、沉积的方法或用光致发光荧光粉悬浮液进行电内渗的方法。为含有光致发光荧光粉的反光面涂覆涂层的问题之一是为承载元件涂覆一层均匀可再生的涂层,尤其是当承载元件存在非平面表面时,例如圆柱面或半球面。采用粉磨、粘合、沉积的方法时,液体悬浮液用于将光致发光荧光粉微粒涂敷到LED基片上。涂层的均匀性很大程度上取决于悬浮液的粘度、悬浮液的颗粒浓度以及环境因子,例如环境温湿度。由于悬浮液干燥前的流动以及涂层厚度的日常变化,涂层缺陷被归类为一般性问题。
承载元件可由挤压成型的玻璃、透明陶瓷或透明塑料制造而成,例如聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(PET)、聚丙烯(polypropylene)、聚乙烯(polyethylene)、丙烯酸(acrylic)等。
为了获得更好的照明均匀性,承载元件可由毛面材料或具有粗糙面的透明材料制成。
在某些情况下,承载元件材料(例如挤压成型的透明塑料,比如聚碳酸酯、聚对苯二甲酸乙二酯、聚丙烯、聚乙烯、丙烯酸等)内的光致发光荧光粉均匀分散更为重要。在这种情况下,可将转换层预加工成片材,然后再热成型成所需的形状。
保形预成型的转换层可粘合到承载元件的内表面上,例如,借助位于转换层和承载元件内表面之间的有机硅粘合剂进行粘合。在这种情况下,粘结层可能很薄,例如,比转换层更薄,而不能维持抵抗转换层散热的大热阻。
在该照明装置的具体实施例之一中,采用了一种预成型片材,将片材粘合到玻璃或聚碳酸酯圆柱状承载元件上。采用一种有机溶剂制备光致发光荧光粉、表面活化剂(表面活性剂)和聚合物的悬浮液。然后可通过挤压成型或型模铸造将悬浮液制成板材,或者可将其浇注在平面基片上,例如玻璃基片上,然后待其干燥。可从临时基片上分离出制成的片材,然后使用一种溶剂或氰基丙烯酸盐粘合剂将其粘合到承载元件上。
在一个具体实例中,如图9所示,通过挤压成型将一种基于钇钆铈铝石榴石的试验性光致发光荧光粉微粒悬浮液制成不同厚度的片材,其中钇钆铈铝石榴石溶解于亚甲基氯的聚碳酸酯溶液中。转换层必须具备足够的厚度,使得从照明装置出射孔出射的混合白光具有必要的色坐标值。根据所使用的光致发光荧光粉内的光散射过程确定其有效厚度,举例来说,其范围在5微米至500微米之间,通常在100微米至250微米之间。
使用异丙醇润湿承载元件的内面,然后使用所需形状的凸模向片材施加压力,将此片材固定在圆柱状承载元件上。该溶剂软化片材,可以从片材下方挤出气泡,确保片材与承载元件充分粘结。可以为玻璃承载元件涂覆一种含有透明硅胶粘合剂的光致发光荧光粉混合物。然后对混合物进行退火处理。在这种情况下,退火过程不会去除硅胶粘合剂。必须牢记,在空气中加热至480度之后,转换橙红色荧光粉中的蓝光的光致发光荧光粉会降解直至完全无效。在这种情况下,必须采用更低烧成温度的其他聚合物。在某些情况下,烧成温度范围在260摄氏度至540摄氏度之间。
可在转换层表面另外涂覆一层透明保护层,可阻止湿气和/或氧气进入转换层,因为一些类型的光致发光荧光粉(例如硫化物荧光粉)容易遭受潮湿损害。该保护层可由能够阻止湿气和/或氧气进入转换层的任何透明材料制成,例如,可由无机材料(比如二氧化硅、氮化硅或氧化铝)和有机聚合物或聚合物和无机层的结合物制成。保护层的首选材料是二氧化硅和氮化硅。
保护层也可使光致发光荧光粉颗粒在空气中具有清晰的光学边界,可减少此边界上LED初级辐射光和光致发光荧光粉的二级辐射光的反射,减少在光致发光荧光粉颗粒内的光致发光荧光粉自辐射的吸收损失,从而提高照明装置的效率。
此外,保护层也可应用于对光致发光荧光粉颗粒的最终表面处理,促使在光致发光荧光粉颗粒表面形成一层纳米级50-100纳米的硅酸锌薄膜,使得光致发光荧光粉颗粒的边界清晰。
必要时,可采用光学透明窗对出射孔进行额外密封保护,可保护转化层免受湿气和/或氧气入侵,同时,可在照明装置内部空间填充惰性气体或将其抽成真空。惰性气体和真空应是光学透明的,便于透射所使用LED和光致发光荧光粉的辐射光。
上述保护窗可由毛面材料或具有粗糙面的透明材料制成,便于获得更好的照明均匀性。
可使转换层(5)表面(8)和承载元件(10)表面(11)形成轴对称外形(球形、椭圆形、抛物形或者其它形状),散热基座(2)的一个平面将其截短。在这种情况下,LED(1)位于上述转换层(5)表面(8)与上述散热基座(2)表面的相交线方向附近。
表面(8)转换层(5)也可以形成多个平坦面或分部。
基于它们的辐射方向性图,将转换层厚度和表面(8)形状以及LED的位置最佳化,可以提高颜色均匀度和从该照明装置中射出的辐射光的角分布,这是由于LED辐射光以不同的角度入射转换层表面(8)且转换层(5)空腔内的反射辐射光从出射孔射出之前再分布。
根据相关技术参数,例如,对于强蓝光LED SL-V-B45AC2旭明(SemiLEDs)芯片或CREE制造的EZBright1000系列芯片来说,LED芯片辐射方向性图可以呈朗伯型分布(与LED芯片表面成90度倾斜角的光锥)或被限制于一个倾斜角α<90°的更小光锥,例如,利用LED芯片表面形成的量子大小的晶格结构将辐射光耦合时即是如此。
在这种情况下,LED可位于散热基座上,其中,LED辐射方向性图的轴与反光镜的对称轴相交成β度(β≥90°-α/2)。
然而,相对较小的一部分LED初级辐射光直接从照明装置出射孔传播出去,为避免用户可能与LED灯光直接目光接触,散热基座(2)可包括一个凸起(12),此凸起遮蔽直接射出照明装置的初级辐射光,绕过转换层(5)表面(8),如图10所示。为确保更充分利用LED初级辐射光,上述散热基座(2)的凸起(12)包括一个附加反光镜---平面镜(13),此反光镜将投射其上的初级辐射光引导向转换层(5)的表面(8)。
除了图8中所示的那些元件(编号与图8中编号一样)之外,本实施例中的照明装置还包括一个光学透明承载元件(10)和一个凸起部分(12),承载元件内侧(11)紧贴转换层(5)的表面(9),凸起部分具有反射涂层(13)。
图11中详示了该照明装置的另一个带有附加反光镜的具体实施例。图中显示了该照明装置散热基座(2)区域的放大的截面图,其中包括固定的LED(1),相应组件编号与图8中相同(不按比例)。
该附加反光镜为一个斜面(15)(例如,就轴对称形状的转换层来说,该斜面为一个倒置的截锥面),位于LED芯片(1)和转换层(5)之间,反光镜斜面(15)上的反射将投射在反光镜上的LED芯片(1)辐射光几乎全部重新导向转换层(5)的相对面,使该照明装置的出射光均匀。
在该照明装置的本实施例中,LED芯片(1)位于散热基座(2)上,所以LED芯片(1)的表面法线与转换层(5)的对称轴线平行(或成小角度),转换层(5)为一层薄膜,通过前面提到的方法之一将其涂覆在半球形玻璃盖帽(17)的内表面上,使用一种弹性耐热化合物(18)将半球形玻璃盖帽(17)与半球形铝接触元件(19)粘合,半球形铝接触元件(19)与弹性耐热导电化合物(20)粘合,弹性耐热导电化合物(20)与散热肋片(21)的内侧粘合。散热肋片(21)位于窗之间,窗用于输出转换层(5)外侧(9)射来的光线,散热肋片设置在散热罩上,用于此照明装置散热。窗用于输出转换层(5)外侧(9)射来的光线,在接触元件(19)中也设置有窗,窗位于散热罩的散热肋片之间,散热罩的散热肋片一起形成LED芯片(1)的第二公共电极,LED芯片(1)通过导体(14)和聚酰亚胺条板(16)与公共电极相连,且与其平行,聚酰亚胺条板(16)上涂覆有金属涂层(15)。
如图12所示,接触元件(19)以及散热罩中设置有窗,用于输出光线,其位于散热罩的散热肋片(21)之间。
为提高光反射率,聚酰亚胺条板(16)上的金属涂层(15)涂覆有一层薄铝层,除了作为电接点之外,金属涂层(15)还用作额外的反光镜。凭借LED的这一布置,LED发射的初级辐射光不会直接进入观察者的眼睛里。
第一电极是散热基座(2),LED芯片(1)焊接在散热基座(2)上,散热罩的散热肋片与散热基座(2)电接触和热接触。通过中心圆柱输出(图11中未显示)将电功率供给到接触元件(19)上,中心圆柱输出焊接(或锡焊)在接触元件(19)的顶上,与转换层(5)的对称轴轴向对齐,并通过散热罩内表面里的电绝缘孔与位于散热罩体(未显示)上部相应空腔里的电驱动相连。电流进一步从接触原件(19)上流过,并通过聚酰亚胺条板(16)上的金属涂层(15)被施加到LED芯片(1)上与导线触点(14)连接。
可利用LED组件制造中应用的已知技术,使用光学化合物(22)将LED芯片(1)和导线触点(14)密封。
半球形盖帽(17)也可由导热陶瓷或光学透明塑料(比如聚碳酸酯、聚对苯二甲酸乙二酯(PET)、聚丙烯、聚乙烯、丙烯酸或其他类似材料)制成。
接触元件(19)也可由不锈钢、铜、黄铜、科瓦铁镍钴合金(Kovar)或任何类似材料制成。
散热罩可由任何适当材料制成,例如铜或铝。例如,可以为散热罩添加散热肋片,增加热传导表面,如图12所示。
若使用旭明(SemiLEDs)制造的SL-V-B35AK型LED芯片,片材(如图9所示)用于制造半圆柱形线性白光照明装置的样品,实现了160-200流明/瓦的发光效率,发光效率大小取决于片材的厚度。
参考文献
1,Yamada,K.,Imai,Y.与Ishii K.,“由蓝光LED和钇铝石榴石荧光粉组成的光源装置的光学仿真”,J.Light&Vis.Env.27(2),70-74(2003)。
2,Narendran,N.,Gu.Y.,Freyssinier,J.,Zhu,Y.,,“提取散布荧光粉光子以提高白光LED效率”,Phys.Stat.Sol.(a)202(6),R60-R62(2005)。3,Zhu Y.,N.Narendran,和Y.Gu,“YAG:Ce荧光粉的光学特性研究。”第六届固态照明国际会议。国际光学工程学会(SPIE)会刊。6337,63370S(2006)。
Claims (13)
1.一种照明装置,包括初级辐射源、散热基座和辐射光转换层(设计为一个转换材料层),初级辐射源由一个或多个发光二极管组成。上述的发光二极管固定于散热基座的一个表面上。转换材料层将投射在其表面上的发光二极管的初级辐射光转换成二级辐射光,转换材料层位于远离初级光源的位置。其中,散热基座有一个输出辐射光的孔,转换材料层的上述表面受到发光二极管照射,该表面有个凹形,其凹面面向上述的孔和发光二极管,而发光二极管位于该孔的边缘附近。
2.根据权利要求1所述的照明装置,其中,转换材料层的上述表面制成了回转椭面,尤其是球面或者抛物面,其主轴垂直于散热基座内孔的平面,该表面被平行于散热基座内孔平面的平面截断。
3.根据权利要求1所述的照明装置,其中,转换材料层的上述表面制成了圆柱面,该表面被平行于散热基座内孔平面的平面截断。
4.根据权利要求1所述的照明装置,其中,散热基座包括一个凸起部分,用于遮蔽直接射至上述孔的初级辐射光。
5.根据权利要求2所述的照明装置,其中,上述转换材料层表面由多个平面或区段组成。
6.根据权利要求1所述的照明装置,其中,上述转换材料层置于承载元件的内凹面上,承载元件由光学透明材料制成,该转换材料层的凸面与其凹面相对,其凹面受到初级辐射光照射,该转换材料层的凸面与上述承载元件的凹面直接接触。
7.根据权利要求6所述的照明装置,其中,一种光学透明介质将上述转换材料层的凸面与上述承载元件的上述凹面隔开。
8.根据权利要求6所述的照明装置,其中,上述承载元件由毛面材料或具有粗糙面的透明材料制成。
9.根据权利要求4所述的照明装置,其中,上述凸起部分进一步包括一个平面镜部分,将入射其上的初级辐射光引导至上述转换材料层表面,转换材料层表面与上述平面镜部分相对。
10.根据权利要求7所述的照明装置,其中,多个发光二极管固定于散热基座上,因此每个发光二极管辐射方向性图的轴与转换材料层的对称轴相交而成的角度等于或小于90°与每个上述发光二极管辐射方向性图的半宽度之间的差值。
11.根据权利要求3所述的照明装置,其中,多个发光二极管固定于散热基座上,因此每个发光二极管辐射方向性图的轴与转换材料层的对称轴平行或成锐角。位于转换材料层表面和发光二极管之间的散热基座包括一个倾斜的反光镜部分,将投射其上的初级辐射光引导至转换材料层的另一边。
12.根据权利要求1所述的照明装置,其中,使用由光学透明或毛面材料或者具有粗糙面的透明材料制成的窗密封上述孔。
13.根据权利要求1所述的照明装置,其中,转换材料层厚度范围在5微米至500微米之间。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2011105809 | 2011-02-17 | ||
RU2011105809/07A RU2457393C1 (ru) | 2011-02-17 | 2011-02-17 | Светодиодный источник белого света с удаленным фотолюминесцентным конвертером |
PCT/RU2012/000025 WO2012112073A1 (ru) | 2011-02-17 | 2012-01-23 | Светодиодный источник белого света с удаленным фотолюминесцентным конвертером |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103380327A true CN103380327A (zh) | 2013-10-30 |
CN103380327B CN103380327B (zh) | 2016-03-02 |
Family
ID=46672815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280009161.6A Expired - Fee Related CN103380327B (zh) | 2011-02-17 | 2012-01-23 | 具有远置光致发光转换层的led白光源 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9347622B2 (zh) |
EP (1) | EP2677233B1 (zh) |
JP (1) | JP5946228B2 (zh) |
KR (1) | KR20140073462A (zh) |
CN (1) | CN103380327B (zh) |
CA (1) | CA2827469A1 (zh) |
RU (1) | RU2457393C1 (zh) |
WO (1) | WO2012112073A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2569312C2 (ru) * | 2013-04-05 | 2015-11-20 | Сергей Александрович Панин | Светодиодный источник света (варианты) |
RU2549093C2 (ru) * | 2013-08-07 | 2015-04-20 | Общество с ограниченной ответственностью "Научно-производственная фирма "Плазмаинформ" | Герметизирующая оболочка драйвера светодиодного светильника |
US9764686B2 (en) | 2013-11-21 | 2017-09-19 | Ford Global Technologies, Llc | Light-producing assembly for a vehicle |
JP6173562B2 (ja) * | 2014-03-18 | 2017-08-02 | フィリップス ライティング ホールディング ビー ヴィ | リング状透光エレメントを有する照明装置 |
JP6038398B2 (ja) * | 2014-07-08 | 2016-12-07 | フィリップス ライティング ホールディング ビー ヴィ | 冷却向上用の発光装置 |
US20170352789A1 (en) | 2014-12-26 | 2017-12-07 | Ns Materials Inc. | Wavelength converting member and method of producing the same |
US10797209B2 (en) * | 2016-02-05 | 2020-10-06 | Maven Optronics Co., Ltd. | Light emitting device with beam shaping structure and manufacturing method of the same |
WO2018081182A1 (en) * | 2016-10-24 | 2018-05-03 | Ameritech Llc | Luminaire including light emitting diodes and having improved energy-efficiency |
US10244599B1 (en) | 2016-11-10 | 2019-03-26 | Kichler Lighting Llc | Warm dim circuit for use with LED lighting fixtures |
EP3336417B1 (en) | 2016-12-15 | 2020-04-08 | Signify Holding B.V. | Visible and uv lighting system |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1868071A (zh) * | 2003-10-15 | 2006-11-22 | 日亚化学工业株式会社 | 发光装置 |
JP2007243055A (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works Ltd | 発光装置 |
CN101375420A (zh) * | 2006-01-24 | 2009-02-25 | 皇家飞利浦电子股份有限公司 | 发光器件 |
CN101449100A (zh) * | 2006-05-05 | 2009-06-03 | 科锐Led照明科技公司 | 照明装置 |
DE102008027339A1 (de) * | 2008-04-30 | 2009-11-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Effizienter Wellenlängenkonverter und Leuchtvorrichtung mit einem effizienten Wellenlängenkonverter |
CN101839411A (zh) * | 2010-05-13 | 2010-09-22 | 刘昌贵 | 一种led组合光源 |
US20100277907A1 (en) * | 2009-05-01 | 2010-11-04 | Michael Phipps | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
CN101889356A (zh) * | 2007-12-07 | 2010-11-17 | 松下电工株式会社 | 发光装置 |
CN201680320U (zh) * | 2010-03-18 | 2010-12-22 | 深圳市航嘉驰源电气股份有限公司 | Led球泡灯 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6600175B1 (en) | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
US6149283A (en) * | 1998-12-09 | 2000-11-21 | Rensselaer Polytechnic Institute (Rpi) | LED lamp with reflector and multicolor adjuster |
US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
JP2001156338A (ja) * | 1999-11-24 | 2001-06-08 | Koha Co Ltd | 可視光線発光装置 |
JP2003224304A (ja) * | 2002-01-28 | 2003-08-08 | Kasei Optonix Co Ltd | 発光装置 |
JP4289027B2 (ja) * | 2002-07-25 | 2009-07-01 | 豊田合成株式会社 | 発光装置 |
US7800121B2 (en) * | 2002-08-30 | 2010-09-21 | Lumination Llc | Light emitting diode component |
ES2335878T3 (es) * | 2002-08-30 | 2010-04-06 | Lumination, Llc | Led recubierto con eficacia mejorada. |
DE10307282A1 (de) * | 2003-02-20 | 2004-09-02 | Osram Opto Semiconductors Gmbh | Beschichteter Leuchtstoff, lichtemittierende Vorrichtung mit derartigem Leuchtstoff und Verfahren zu seiner Herstellung |
JP4804429B2 (ja) * | 2003-12-05 | 2011-11-02 | 三菱電機株式会社 | 発光装置及びこれを用いた照明器具 |
TWI267211B (en) * | 2004-06-28 | 2006-11-21 | Kyocera Corp | Light-emitting apparatus and illuminating apparatus |
JP2006059625A (ja) * | 2004-08-19 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Led照明装置、ペンダント照明器具および街路灯 |
SG161205A1 (en) * | 2004-12-22 | 2010-05-27 | Seoul Semiconductor Co Ltd | Light emitting device |
US7293908B2 (en) * | 2005-10-18 | 2007-11-13 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
RU2301475C1 (ru) * | 2005-12-09 | 2007-06-20 | Общество с ограниченной ответственностью Научно-производственное предприятие "Экосвет" | Светоизлучающий узел, способ создания свечения светоизлучающего узла и устройство для осуществления способа создания свечения светоизлучающего узла |
JP2007240858A (ja) * | 2006-03-08 | 2007-09-20 | Mitsubishi Electric Corp | 照明装置、映像表示装置、および映像信号制御方法 |
DE102006015606A1 (de) * | 2006-04-04 | 2007-10-18 | Noctron Holding S.A. | Halbleiter-Leuchtmittel und Leuchtpaneel mit solchen |
WO2008142638A1 (en) * | 2007-05-24 | 2008-11-27 | Koninklijke Philips Electronics N.V. | Color-tunable illumination system |
JP5379128B2 (ja) * | 2007-06-04 | 2013-12-25 | コーニンクレッカ フィリップス エヌ ヴェ | 色調整可能な照明システム、ランプ及び照明器具 |
US8042971B2 (en) * | 2007-06-27 | 2011-10-25 | Cree, Inc. | Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods |
RU2360180C2 (ru) * | 2007-08-09 | 2009-06-27 | Открытое акционерное общество "Особое конструкторское бюро "МЭЛЗ" | Устройство для создания светоизлучающей поверхности (варианты) |
US7810956B2 (en) * | 2007-08-23 | 2010-10-12 | Koninklijke Philips Electronics N.V. | Light source including reflective wavelength-converting layer |
EP2235434A4 (en) * | 2007-12-24 | 2011-04-20 | Moore Benjamin & Co | SYSTEM FOR THE PRESENTATION OF COLORS WITH AN INTEGRATED LIGHT CAPSULE |
US8021008B2 (en) * | 2008-05-27 | 2011-09-20 | Abl Ip Holding Llc | Solid state lighting using quantum dots in a liquid |
US8028537B2 (en) * | 2009-05-01 | 2011-10-04 | Abl Ip Holding Llc | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
US7618157B1 (en) * | 2008-06-25 | 2009-11-17 | Osram Sylvania Inc. | Tubular blue LED lamp with remote phosphor |
US8283190B2 (en) * | 2008-06-26 | 2012-10-09 | Osram Sylvania Inc. | LED lamp with remote phosphor coating and method of making the lamp |
KR101266226B1 (ko) * | 2008-07-09 | 2013-05-21 | 우시오덴키 가부시키가이샤 | 발광 장치 및 발광 장치의 제조 방법 |
EP2381495B1 (en) * | 2008-12-19 | 2017-04-26 | Samsung Electronics Co., Ltd. | Light emitting device package |
EP2213233A1 (en) | 2009-01-29 | 2010-08-04 | Vivi S.r.L. | X-ray apparatus comprising an improved control unit |
US7956546B2 (en) * | 2009-05-15 | 2011-06-07 | Bridgelux, Inc. | Modular LED light bulb |
WO2010141235A1 (en) * | 2009-06-01 | 2010-12-09 | Nitto Denko Corporation | Light-emitting divice comprising a dome-shaped ceramic phosphor |
US8217406B2 (en) * | 2009-12-02 | 2012-07-10 | Abl Ip Holding Llc | Solid state light emitter with pumped nanophosphors for producing high CRI white light |
KR20100071957A (ko) * | 2010-06-09 | 2010-06-29 | 김윤호 | 선별물품을 터치방식으로 배출시키는 중량선별기 |
-
2011
- 2011-02-17 RU RU2011105809/07A patent/RU2457393C1/ru not_active IP Right Cessation
-
2012
- 2012-01-23 WO PCT/RU2012/000025 patent/WO2012112073A1/ru active Application Filing
- 2012-01-23 US US13/985,951 patent/US9347622B2/en not_active Expired - Fee Related
- 2012-01-23 JP JP2013554416A patent/JP5946228B2/ja not_active Expired - Fee Related
- 2012-01-23 CN CN201280009161.6A patent/CN103380327B/zh not_active Expired - Fee Related
- 2012-01-23 KR KR1020137024808A patent/KR20140073462A/ko not_active Application Discontinuation
- 2012-01-23 CA CA2827469A patent/CA2827469A1/en not_active Abandoned
- 2012-01-23 EP EP12747039.1A patent/EP2677233B1/en not_active Not-in-force
-
2016
- 2016-04-08 US US15/093,779 patent/US20160290574A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1868071A (zh) * | 2003-10-15 | 2006-11-22 | 日亚化学工业株式会社 | 发光装置 |
CN101375420A (zh) * | 2006-01-24 | 2009-02-25 | 皇家飞利浦电子股份有限公司 | 发光器件 |
JP2007243055A (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works Ltd | 発光装置 |
CN101449100A (zh) * | 2006-05-05 | 2009-06-03 | 科锐Led照明科技公司 | 照明装置 |
CN101889356A (zh) * | 2007-12-07 | 2010-11-17 | 松下电工株式会社 | 发光装置 |
DE102008027339A1 (de) * | 2008-04-30 | 2009-11-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Effizienter Wellenlängenkonverter und Leuchtvorrichtung mit einem effizienten Wellenlängenkonverter |
US20100277907A1 (en) * | 2009-05-01 | 2010-11-04 | Michael Phipps | Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity |
CN201680320U (zh) * | 2010-03-18 | 2010-12-22 | 深圳市航嘉驰源电气股份有限公司 | Led球泡灯 |
CN101839411A (zh) * | 2010-05-13 | 2010-09-22 | 刘昌贵 | 一种led组合光源 |
Also Published As
Publication number | Publication date |
---|---|
JP5946228B2 (ja) | 2016-07-05 |
US20160290574A1 (en) | 2016-10-06 |
JP2014507807A (ja) | 2014-03-27 |
KR20140073462A (ko) | 2014-06-16 |
EP2677233A4 (en) | 2015-04-29 |
US20130320834A1 (en) | 2013-12-05 |
EP2677233B1 (en) | 2017-01-18 |
US9347622B2 (en) | 2016-05-24 |
RU2457393C1 (ru) | 2012-07-27 |
EP2677233A1 (en) | 2013-12-25 |
CN103380327B (zh) | 2016-03-02 |
WO2012112073A1 (ru) | 2012-08-23 |
CA2827469A1 (en) | 2012-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103380327B (zh) | 具有远置光致发光转换层的led白光源 | |
CN104272014B (zh) | 具有组合的远置光致发光转换层的led白光源 | |
RU2452059C1 (ru) | Светодиодный источник белого света с удаленным фотолюминесцентным отражающим конвертером | |
RU2508616C2 (ru) | Осветительное устройство с сид и одним или более пропускающими окнами | |
TWI614452B (zh) | 用於固態發光裝置和燈的光致發光波長轉換構件 | |
KR101202309B1 (ko) | 내화 인광층을 갖는 발광 소자 | |
US20140198480A1 (en) | Diffuser component having scattering particles | |
CN102859259A (zh) | 基于 led 的基座型照明结构 | |
KR100925527B1 (ko) | 엘이디 조명등용 히트 스프레더 피스와 이를 결합한 엘이디 조명등용 히트 스프레더 및 이를 구비한 튜브 타입 엘이디 조명등 | |
RU2475887C1 (ru) | Светодиодный источник белого света с удаленным отражательным многослойным фотолюминесцентным конвертером | |
JP2014505982A5 (zh) | ||
CN101513120A (zh) | 包含发光磷光体的发光二极管照明布置 | |
TW201144699A (en) | High efficacy LED lamp with remote phosphor and diffuser configuration |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160302 Termination date: 20180123 |
|
CF01 | Termination of patent right due to non-payment of annual fee |