CN103377972A - Substrate processing apparatus and method of supplying processing solution - Google Patents

Substrate processing apparatus and method of supplying processing solution Download PDF

Info

Publication number
CN103377972A
CN103377972A CN2013101570050A CN201310157005A CN103377972A CN 103377972 A CN103377972 A CN 103377972A CN 2013101570050 A CN2013101570050 A CN 2013101570050A CN 201310157005 A CN201310157005 A CN 201310157005A CN 103377972 A CN103377972 A CN 103377972A
Authority
CN
China
Prior art keywords
treatment solution
temperature
heater
treatment
preliminary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013101570050A
Other languages
Chinese (zh)
Other versions
CN103377972B (en
Inventor
姜丙喆
金奉主
姜秉万
秋永浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semes Co Ltd
Original Assignee
Semes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120117204A external-priority patent/KR101430750B1/en
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of CN103377972A publication Critical patent/CN103377972A/en
Application granted granted Critical
Publication of CN103377972B publication Critical patent/CN103377972B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1042—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material provided with means for heating or cooling the liquid or other fluent material in the supplying means upstream of the applying apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0324—With control of flow by a condition or characteristic of a fluid
    • Y10T137/0329—Mixing of plural fluids of diverse characteristics or conditions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention relates to a substrate processing apparatus and a method of supplying processing solution. Provided is a substrate processing apparatus. The apparatus includes a processing chamber containing a substrate and processing the substrate by using a processing solution and a supplying unit supplying the processing solution to the processing chamber. The supplying unit includes a supply line through which the processing solution is supplied, a preliminary heater installed on the supply line and preliminary heating the processing solution, a main heater installed on the supply line at a lower stream of the preliminary heater and secondarily heating the processing solution, a first detour line connected to the supply line to detour to the preliminary heater and comprising a first valve, a second detour line connected to the supply line to detour the preliminary heater and the main heater or the main heater and comprising a second valve, and a controller controlling the first valve and the second valve.

Description

The method of substrate board treatment and supply Treatment Solution
Technical field
The present invention relates to a kind of substrate board treatment, and relate more specifically to a kind ofly can mix multi-chemical, and substrate board treatment and a kind of method of supplying with solution of the temperature of control by mixing the solution that to obtain for the treatment of the chemicals of substrate.
Background technology
Normally, carry out the manufacture process of semiconductor device, flat-panel monitor device or solar cell by the processing of film gas phase accumulation, etch processes and clean.In these manufacture processes, in etch processes and clean, use multi-chemical.For example, multiple Treatment Solution can be etching solution, developing solution and cleaning solution.
For etch processes or clean, use the Treatment Solution that obtains by mixing by a certain percentage multi-chemical.Treatment Solution is supplied to chamber or process chamber by the chemicals feedway.The chemicals feedway is controlled at two Treatment Solution and the concentration of chemicals and temperature and supply with this Treatment Solution and chemicals in the vessel according to corresponding treatment conditions.
Because chemicals feedway commonly used prepares concentration and the temperature of the Treatment Solution that will use in advance in two vessel, and supplies with chamber with described Treatment Solution, so this needs preparation time.In addition, also need preparation time in case change the temperature of Treatment Solution when having determined temperature and preparation.Also need preparation time in case change the concentration of Treatment Solution when having determined ratio and preparation.
As mentioned above, owing to will supply to all chambers with identical condition by the previously prepared Treatment Solution of chemicals feedway, therefore can not change the condition of the Treatment Solution that is used for each chamber.Simultaneously, according to usage level, useful life also has restriction.
Summary of the invention
The invention provides a kind of substrate board treatment and a kind of method of supplying with this Treatment Solution that can obtain by the temperature that also increases subsequently the chemicals that is in normal temperature to be supplied with the real-time mixed chemical product of required ratio Treatment Solution.
The present invention also provides a kind of substrate board treatment and a kind of method of supplying with this Treatment Solution that Treatment Solution with different condition can be supplied with corresponding chambers.
The present invention also provide a kind of can the real time altering Treatment Solution temperature and substrate board treatment and a kind of method of supplying with this Treatment Solution of flow.
The present invention also provides a kind of substrate board treatment and a kind of method of supplying with Treatment Solution in this device that can prevent the temperature swing (temperature hunting) that moment occurs.
The present invention also provides a kind of substrate board treatment and a kind of method of supplying with Treatment Solution, although Treatment Solution does not spray, the temperature that described substrate board treatment still can be kept nozzle segment is consistent.
Aspect of the present invention is not limited to this, and by following description, those skilled in the art will clearly understand above NM other side.
Embodiments of the invention provide substrate board treatment, and described substrate board treatment comprises: treatment chamber, and it holds substrate and utilizes Treatment Solution to process this substrate; And feed unit, it supplies to treatment chamber with Treatment Solution.Feed unit comprises: feeding pipe, supply with Treatment Solution by this feeding pipe; Preliminary heater, it is installed in the feeding pipe and preliminary heat treated solution; Primary heater, it is installed on the feeding pipe of downstream part of preliminary heater and the post bake Treatment Solution; First pipeline that detours, it is connected to feeding pipe detouring to preliminary heater, and comprises the first valve; And controller, it controls the first valve.
In certain embodiments, this device can further comprise second pipeline that detours, this second pipeline that detours is connected to feeding pipe detouring to preliminary heater and primary heater or to detour to primary heater, and second pipeline that detours comprises the second valve by controller control.
In other embodiments, this device can further comprise return line, and this return line is connected to feeding pipe, is back to the upstream of preliminary heater from the downstream of primary heater to allow Treatment Solution.
In other embodiment still, primary heater can be that water-bath heater is with the temperature of accurate control Treatment Solution.
In addition other embodiment in, this device can further comprise the rate controller that is installed on the feeding pipe, it receives from one or more chemicals of one or more chemicals feeder and to preliminary heater fed mixing processing solution.
In other embodiment, the flow controller of control chemicals flow can be installed on the pipeline of connection speed controller and chemicals feeder.
In other embodiments of the invention, the method for supply Treatment Solution comprises: reception and mixing are from the chemicals of one or more chemicals feeder; When mixing processing solution passed through preliminary heater, tentatively the temperature with mixing processing solution increased to definite temperature number of degrees; And by primary heater the temperature secondary of Treatment Solution is increased to definite temperature number of degrees.When in the preliminary heater during occurrence temperature overshoot, flowing through detours to the detour a part of Treatment Solution that is in normal temperature of pipeline of first of preliminary heater can mix with the Treatment Solution that its temperature is tentatively increased.
In certain embodiments, when the temperature of real-time reduction Treatment Solution (its temperature is increased to definite number of degrees when secondary increases temperature), flowing through detours to the detour a part of Treatment Solution that is in normal temperature of pipeline of second of preliminary heater and primary heater can be mixed by the Treatment Solution that secondary increases with its temperature.
In other embodiments, for accurately increasing the temperature of Treatment Solution, when increasing temperature, secondary can use water-bath heater.
Description of drawings
Comprise accompanying drawing so that further understanding of the invention to be provided, it is merged in this specification and consists of the part of this specification.Accompanying drawing shows exemplary embodiment of the present invention, and is used for explaining principle of the present invention together with the description.In the accompanying drawings:
Fig. 1 is the vertical view that schematically shows base plate processing system;
Fig. 2 is the cross-sectional view strength that substrate board treatment is shown;
Fig. 3 is the structure chart that is depicted as the Treatment Solution feed unit of corresponding substrate board treatment setting; With
Fig. 4 is the structure chart that the Treatment Solution feed unit is shown.
Embodiment
The preferred embodiments of the present invention are described below with reference to accompanying drawings in further detail.Yet the present invention can with multi-form embodiment, should not be configured to be limited to the embodiment that set forth in this place.But these embodiment provide so that open more comprehensively with complete, and scope of the present invention has fully been conveyed to those skilled in the art.
Fig. 1 is the vertical view that schematically shows base plate processing system 1000.
With reference to Fig. 1, base plate processing system 1000 can comprise protractor (index) part 10 and processing section 20.Protractor part 10 and processing section 20 are arranged to delegation.Hereinafter, the direction of arranging protractor part 10 and processing section 20 is designated as first direction 1, direction perpendicular to first direction 1 in vertical view is designated as second direction 2, and is designated as third direction 3 perpendicular to the direction on the plane that comprises first direction 1 and second direction 2.
Protractor part 10 is arranged in the front portion of base plate processing system 1000 at first direction 1.Protractor part 10 comprises load port 12 and shifts framework 14.
The carrier 11 that holds substrate W is positioned on the load port 12.Load port 12 is provided with a plurality of and is arranged to row along second direction 2.The quantity of described load port 12 can increase or reduce according to treatment effeciency and surf zone (footprint) situation of base plate processing system 1000.Front open type wafer box (FOUP) can be used as carrier 11.Be used for holding level and be formed at carrier 11 in a plurality of slits of the substrate of ground surface.
Shift framework 14 and close on load port 12 settings at first direction.Shifting framework 14 is arranged between the buffer cell 30 of load port 12 and processing section 20.Shift framework 14 and comprise protractor track 15 and protractor manipulator 17.Protractor manipulator 17 is positioned on the protractor guide rail 15.Protractor manipulator 17 is transfer base substrate W between buffer cell 30 and carrier 11.Protractor manipulator 17 is mobile or around third direction 3 rotations as the crow flies along protractor track 15 on second direction 2.
Processing section 20 is arranged on the rear portion of base plate processing system 1000 at first direction 1, closes on protractor part 10.Processing section 20 comprises buffer cell 30, transfer path 40, main transfer robot arm 50 and substrate board treatment 60.
Buffer cell 30 is arranged on the front portion of processing section at first direction 1.Buffer cell 30 is the places of the interim storage of this substrate W and (on standby) for subsequent use before transfer base substrate W between substrate board treatment 60 and the carrier 11.Buffer 30 is provided with the slit (not shown), and substrate W is arranged on the slit, and wherein, slit is provided with a plurality of, and it is disconnected from each other on third direction 3.
Corresponding to buffer cell 30 transfer path 40 is set.Transfer path 40 is arranged to make its longitudinal direction to be parallel to first direction 1.Transfer path 40 is provided with the path of moving via its main transfer robot arm 50.In the both sides of transfer path 40, substrate board treatment 60 is in the first direction setting that faces with each other.Transfer orbit is installed on the transfer path 40, and is mobile at first direction 1 to allow main transfer robot arm 50, and rising or descending between the top of substrate board treatment 60 and the bottom and between the top of buffer cell 30 and bottom.
Main transfer robot arm 50 is installed on the transfer path 40, and at transfer base substrate W between substrate board treatment 60 and the buffer cell 30 or between corresponding substrate board treatment 60.Main transfer robot arm 50 is mobile as the crow flies along transfer path 40 on second direction 2, perhaps around third direction 3 rotations.
Substrate board treatment 60 is provided with a plurality of and is arranged on the both sides of transfer path 40 in second direction 2.Some substrate board treatments 60 are along the longitudinal direction setting of transfer path 40.In addition, some substrate board treatments 60 also are set to stacking each other.That is to say that substrate board treatment 60 can be arranged as A * B in a side of transfer path 40.In this case, A is the quantity of being arranged to the substrate board treatment 60 of delegation at first direction 1, and B is the quantity of being arranged to the substrate board treatment 60 of delegation in second direction 2.When on the side that 4 or 6 substrate board treatments 60 is arranged on transfer path 40, substrate board treatment 60 can be arranged to one of 2 * 2 or 3 * 2.The quantity of substrate board treatment 60 can increase or reduce.Different from foregoing is that substrate board treatment 60 can only be arranged on a side of transfer path 40.In addition differently, substrate board treatment 60 can also be arranged to individual layer in a side or the both sides of transfer path 40.
Substrate board treatment 60 can be carried out the processing of cleaning base plate W.Substrate board treatment 60 can have according to the kind of performed clean different structures.Differently, each substrate board treatment 60 can have identical structure.Selectively, substrate board treatment 60 is divided into a plurality of groups, and wherein, the substrate board treatment 60 in being included in mutually on the same group can have identical structure, and the substrate board treatment 60 in being included in not on the same group can have different structures each other.For example, when substrate board treatment 60 was divided into two groups, first group substrate board treatment 60 can be arranged on a side of transfer path 40, and second group substrate board treatment 60 can be arranged on transfer path 40 opposite sides.Alternatively, first group substrate board treatment 60 can be arranged on the low layer of transfer path 40 both sides, and second group substrate board treatment 60 can be arranged on the upper strata of transfer path 40 both sides.First group substrate board treatment 60 and second group substrate board treatment 60 can be classified according to the kind of employed chemicals or the kind of its cleaning method.Differently, the substrate board treatment 60 of first group substrate board treatment 60 and second group can be set to carry out continuously on substrate W and process.
Fig. 2 is the cross-sectional view strength that substrate board treatment 60 is shown, and Fig. 3 is the structure chart that is depicted as the Treatment Solution feed unit 800 of corresponding substrate board treatment 60 settings.
In the present embodiment, for example, will describe by come the device of cleaning base plate with Treatment Solution.Yet technical scope of the present invention is not limited to this, can also be applied to carry out when providing Treatment Solution to substrate the multiple device such as the processing of etch processes.
And, in the present embodiment, although semiconductor substrate is described as the substrate processed by substrate board treatment, the invention is not restricted to this, can also be applied to the multiple substrate such as glass substrate.
With reference to Fig. 2 and Fig. 3, substrate board treatment 60 comprises treatment chamber 700, container handling 100, base plate supports element 200, injection component 300 and Treatment Solution feed unit 800.
Treatment chamber 700 provides enclosure space, and fan filtering unit 710 is installed in the top for the treatment of chamber 700.Fan filtering unit 710 is in the treatment chamber 700 inner qi collapses (air pocket) that generate.
Fan filtering unit 710 is the modules that formed by filter and air supply fan, and is to filter fresh air and fresh air is supplied to device in the treatment chamber 700.Fresh air is by fan filtering unit 710 and supply to treatment chamber 700, therefore forms qi collapse.Qi collapse provides uniform air-flow above substrate, and be disposed to together expulsion element 400 and they are removed such as the dusty gas of flue gas and air via what the collection container of container handling 100 will produce by Treatment Solution treatment substrate surface the time, therefore, the cleaning that has kept container handling 100 inside.
By horizontal division treatment chamber 700 is divided into processing region 716 and keeps zone 718.An although part shown in the accompanying drawing, keeping the zone 718 is such spaces: wherein except collecting pipeline 141 and 145 and the Treatment Solution feed unit 800 residing spaces that are connected to the nozzle that is connected to injection component 300 340 inferior gas exhaust piping 410 of container handling 100, keeping regional 718 can be separated with the processing region 716 for the treatment of substrate W.
The shape of container handling 100 is have the open type top cylindrical, and container handling 100 is processed the space for treatment substrate W provides.The open type top of container handling 100 is set to transmit the path of substrate W.Base plate supports element 200 is arranged in processes the space.Container handling 100 is provided with to be connected to and is positioned at the discharge duct 190 of processing the expulsion element 400 below the space.Discharge duct 190 is provided with the discharge pipe line 192 that is positioned on the bottom surface.
Container handling 100 comprises collection vessel 121, the 122 and 123 and first ascending member 130.
Collection vessel 121,122 and 123 is arranged to multistage and is dispersed in rotary plate W and airborne chemicals with absorption.Each collection vessel 121,122 and 123 can collect for the treatment of different Treatment Solution.
The 3rd collection vessel 123 forms around the annular shape of base plate supports element 200, and the second collection vessel 122 forms the annular shape around the 3rd collection vessel 123, and the first collection vessel 121 forms the annular shape around the second collection vessel 122.The inner space 123a of the 3rd collection vessel 123 is set to import, and chemicals and air are inhaled in the 3rd collection vessel 123 by this import.Spatial placement between the 3rd collection vessel 123 and the second collection vessel 122 is import, and chemicals and air suck in the second collection vessel 122 by this import.In addition, the spatial placement between the second collection vessel 122 and the first collection vessel 121 is import, and chemicals and air suck in the first collection vessel 121 by this import.
In the present embodiment, container handling 100 has three collection vessel as shown, but is not limited to this, and it can comprise two collection vessel or three above collection vessel.
During treatment substrate W, expulsion element 400 provides exhaust pressure for container handling 100 inside.Expulsion element 400 comprises inferior gas exhaust piping 410 and the air-lock 420 that is connected to discharge duct 190.Inferior gas exhaust piping 410 receives and comes from the exhaust pressure of exhaust pump (not shown) and be connected to the primary exhaust conduit that is embedded in the semiconductor production line bottom space.
When carrying out processing, base plate supports element 200 supports and rotary plate W.Base plate supports element 200 comprises swivel head 210, back shaft 220 and rotating driver 230.Swivel head comprises fulcrum post 212 and chuck pin 214.From vertical view, swivel head 210 has and forms basically round-shaped end face.Rotatable back shaft 220 fixes and is attached to the bottom surface of swivel head 210 by rotating driver 230.
Injection component 300 receives and comes from the Treatment Solution of Treatment Solution feed unit 800, and Treatment Solution is injected into the treated surface of the substrate W on the swivel head 210 that is placed on base plate supports element 200.Injection component 300 comprises back shaft 320, driver 310, nozzle support bar 330 and nozzle 340.In the situation of back shaft 320, it vertically is set to third direction 3, and its bottom and driver 310 combinations.Driver 310 allows back shaft 320 rotations and mobile as the crow flies.Nozzle support bar 330 and back shaft 320 combinations, and when inject process solution, nozzle support bar 330 shifts nozzle 340 or allows nozzle 340 mobile above substrate W towards substrate W top.
Nozzle 340 is installed on the bottom surface of nozzle support bar 330 ends.By driver 310 nozzle 340 is transferred to processing position and spare space.Process the position and refer to that nozzle 340 is vertically installed in the position at container handling 100 tops, the spare space refers to that nozzle 340 is perpendicular to the position beyond container handling 100 tops.The Treatment Solution that nozzle 340 inject process solution feed units 800 are supplied with.In addition, nozzle 340 can also directly receive and spray the other Treatment Solution except the Treatment Solution of Treatment Solution feed unit 800 supplies.
Fig. 4 is the structure chart that Treatment Solution feed unit 800 is shown.
With reference to Fig. 4, Treatment Solution feed unit 800 comprises rate controller 810, feeding pipe 820, preliminary heater 830, primary heater 840, flow controller 850, first detour pipeline 862, second detour pipeline 864, return line 866 and controller 890.
The chemicals that rate controller 810 receives from one or more chemicals feeder.For example, rate controller 810 can receive mixed chemicals from the first chemicals feeder 802a and the second chemicals feeder 802b.The flow controller 808 of control chemicals flow can be installed in and make on the first chemicals feeder 802a and the second chemicals feeder 802b one of them and rate controller 810 pipelines 804 connected to one another.Flow controller 808 can comprise liquid flow controller LFC.That is to say the chemicals of the chemicals total amount that the first chemicals feeder 802a and the second chemicals feeder 802b pressure feed in can preset range is determined by flow controller 808.
In other words, multi-chemical is by flow controller 808 its total amount of control and mixing, again mixes during (inline) rate controller 810 on by line subsequently.Correspondingly, Treatment Solution feed unit 800 does not need to comprise the mixing channel for the mixed chemical product.
On the other hand, although only show the first chemicals feeder 802a and the second chemicals feeder 802b among Fig. 4, the chemicals feeder can be three or more, and one of them can be distilled water (DIW) feeder 802c.Control is with the temperature of the chemicals of distilled water can the temperature that reach needs is tentatively carried out and come the execution of secondary ground by utilizing primary heater 840 accurately to control by hot distilled water and cold distilled water are suitably mixed.
The mixed chemical product (being called hereinafter Treatment Solution) that mix on through-rate controller 810 lines are fed into Treatment Solution use the unit.For example, it can be treatment chamber or injection component that the mixed chemical product use the unit, and Treatment Solution can be passed through nozzle 340 supplying substrate W.
On the other hand, the Treatment Solution of through-rate controller 810 mixing can be measured its concentration by the densimeter (not shown) that is connected to rate controller 810.In other words, the concentration of Treatment Solution can directly be measured by the densimeter that is connected to rate controller 810.
The Treatment Solution that through-rate controller 810 mixes is supplied with injection component 340 by feeding pipe 820.
In feeding pipe 820, preliminary heater 830, primary heater 840 and flow controller 850 are that order is installed.
Preliminary heater 830 is installed on the feeding pipe 820 between rate controller 810 and the primary heater 840.The temperature of Treatment Solution tentatively increases to the number of degrees that close on preferred temperature most, and it is Treatment Solution determined temperature during by preliminary heater 830.For example, preliminary heater can be heating lamp.
Primary heater 840 is installed on the feeding pipe 820 between preliminary heater 830 and the flow controller 850.The temperature of Treatment Solution accurately increases to the number of degrees of expectation, and it is Treatment Solution determined number of degrees when passing through primary heater 840.For example, primary heater 840 can be the water-bath heater of the temperature of fine adjustment Treatment Solution.Water-bath heater can comprise: water bed, and it has been full of the liquid that is used for water-bath; Heater, it will be heated to uniform temperature for the water of water-bath; And heat exchanger tube, Treatment Solution to be heated is passed through heat exchanger tube.By in the heat exchanger tube of water-bath heater, the temperature of Treatment Solution accurately increases to definite number of degrees in Treatment Solution.In water-bath heater, when definite number of degrees of the temperature of Treatment Solution are 100 degree or when lower, use thermostatted water, when definite number of degrees of the temperature of Treatment Solution are 100 degree or when higher, use silicone oil.
First pipeline 862 that detours is connected to feeding pipe 820 to detour to preliminary heater 830.The first valve 863 is installed in first and detours on the pipeline 862.When Treatment Solution detours pipeline 862 when detouring to preliminary heater 830 via first, section processes solution can flow.For example, when in the preliminary heater 830 during occurrence temperature overshoot, be anti-here overshoot, allow Treatment Solution that part is in normal temperature to detour by first that pipeline 862 detours and mixes by the Treatment Solution that preliminary heater 830 is heated with its temperature, thus the temperature of the Treatment Solution of control inflow primary heater 840.
Second pipeline 864 that detours is connected to feeding pipe 820 to detour to preliminary heater 820 and primary heater 840.The second valve 865 is installed in second and detours on the pipeline 864.Section processes solution can detour to preliminary heater 820 and primary heater 840 by second pipeline 864 that detours, and then can add feeding pipe 820.For example, when reducing when its temperature being increased in real time the temperature of Treatment Solution of definite number of degrees by primary heater 840, this temperature of processing solution can be controlled through the second Treatment Solution that is in normal temperature that detours pipeline 864 in real time by mixed flow.In the present embodiment, second pipeline 864 that detours detours to preliminary heater 830 and primary heater 840.Yet as another example, second pipeline 864 that detours can be connected to feeding pipe 820 to detour to primary heater 840.
Return line 866 is connected to feeding pipe 820 to allow Treatment Solution to be back to the upstream of preliminary heater 830 from the downstream of primary heater 840.The 3rd valve 867 and circulating pump 868 can be installed on the return line 866.When stopping to supply with Treatment Solution, the drop in temperature of the chemicals in the feeding pipe 820.For anti-here situation, after stopping to supply with Treatment Solution, the Treatment Solution of feeding pipe 820 inside is by return line 866 circulations, thereby kept the consistency of temperature of the Treatment Solution of feeding pipe 820 inside.
Controller 890 controls the first valve 863, the second valve 865, the 3rd valve 867 and circulating pump 868.Controller 890 can be controlled the first valve 863 and the second valve 865, crosses first pipeline 862 and second pipeline 864 that detours that detours to allow the section processes flow of solution.In addition, controller 890 can also be controlled the 3rd valve 867 and circulating pump 868, to allow Treatment Solution by return line 866 circulations.
According to exemplary embodiment, by after real-time mixed chemical product obtain Treatment Solution with required ratio, supply with the chemicals that is in normal temperature when can increase in the temperature with Treatment Solution the required number of degrees.
In addition, according to exemplary embodiment, can supply with the Treatment Solution with different condition to each chamber.
In addition, according to exemplary embodiment, temperature and flow that can the real time altering Treatment Solution.
In addition, according to exemplary embodiment, can prevent the temperature swing that moment occurs.
In addition, according to exemplary embodiment, although Treatment Solution does not spray, the temperature that also can keep nozzle segment is consistent.
Think that above disclosed theme is illustrative, and nonrestrictive, additional claims are intended to cover whole modification, improvement and other embodiment that falls in the spirit and scope of the invention.Therefore, in the maximum protection scope that law allows, protection scope of the present invention is determined by maximum admissible explanation and its equivalent of following claim, and should do not limited or limit by aforementioned detailed description.

Claims (9)

1. substrate board treatment, it comprises:
Treatment chamber, it holds substrate and utilizes Treatment Solution to process described substrate; And
Feed unit, it supplies with described Treatment Solution to described treatment chamber,
Wherein, described feed unit comprises:
Feeding pipe, described Treatment Solution is supplied with by described feeding pipe;
Preliminary heater, it is installed in the described feeding pipe and the described Treatment Solution of preliminary heating;
Primary heater, it is installed on the described feeding pipe of described preliminary heater downstream part and the described Treatment Solution of post bake;
First pipeline that detours, it is connected to described feeding pipe detouring to described preliminary heater, and comprises the first valve; And
Controller, it controls described the first valve.
2. device according to claim 1, further comprise second pipeline that detours, described second pipeline that detours is connected to described feeding pipe detouring to described preliminary heater and described primary heater or to detour to described primary heater, and described second pipeline that detours comprises the second valve by described controller control.
According to claim 1 with 2 in each described device, it further comprises return line, described return line is connected to described feeding pipe to allow described Treatment Solution to be back to the upstream of described preliminary heater from the downstream of described primary heater.
4. device according to claim 3, wherein said primary heater is that water-bath heater is with the temperature of accurate control Treatment Solution.
According to claim 1 with 2 in each described device, it further comprises the rate controller that is installed on the described feeding pipe, it receives one or more chemicals from one or more chemicals feeder, and to described preliminary heater fed mixing processing solution.
6. device according to claim 5, the flow controller of wherein controlling the chemicals flow is installed on the pipeline that connects described rate controller and described chemicals feeder.
7. method of supplying with Treatment Solution, the method comprises:
Reception and mixing are from the chemicals of one or more chemicals feeder;
When mixing processing solution passed through preliminary heater, tentatively the temperature with described mixing processing solution increased to definite temperature number of degrees; With
By primary heater the temperature secondary of described Treatment Solution is increased to definite temperature number of degrees,
Wherein, when described preliminary heater generation overshoot, flowing through detours to the detour a part of Treatment Solution that is in normal temperature of pipeline of first of described preliminary heater can mix with the Treatment Solution that its temperature is tentatively increased.
8. method according to claim 7, wherein, in the time will reducing in real time the temperature of described Treatment Solution, the temperature of described Treatment Solution increases to definite number of degrees when secondary increases temperature, flowing through detours to the detour described a part of Treatment Solution that is in normal temperature of pipeline of second of described preliminary heater and described primary heater is mixed by the Treatment Solution that secondary increases with its temperature.
According to claim 7 with 8 in each described method, wherein when secondary increases temperature, use water-bath heater in order to accurately increase the temperature of described Treatment Solution.
CN201310157005.0A 2012-04-30 2013-04-28 The method that substrate board treatment and supply process solution Active CN103377972B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2012-0045738 2012-04-30
KR20120045738 2012-04-30
KR1020120117204A KR101430750B1 (en) 2012-04-30 2012-10-22 Apparatus for Processing Substrate and method for supplying fluid of the same
KR10-2012-0117204 2012-10-22

Publications (2)

Publication Number Publication Date
CN103377972A true CN103377972A (en) 2013-10-30
CN103377972B CN103377972B (en) 2016-12-28

Family

ID=49462910

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310157005.0A Active CN103377972B (en) 2012-04-30 2013-04-28 The method that substrate board treatment and supply process solution

Country Status (3)

Country Link
US (1) US20130284367A1 (en)
JP (1) JP5841096B2 (en)
CN (1) CN103377972B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347452A (en) * 2013-08-01 2015-02-11 Psk有限公司 Reflow treating unit & substrate treating apparatus
WO2017088466A1 (en) * 2015-11-23 2017-06-01 宇宙电路板设备(深圳)有限公司 Wet chemical treating device for printed circuit board and wet chemical treating method for printed circuit board
CN107305854A (en) * 2016-04-22 2017-10-31 盛美半导体设备（上海）有限公司 A kind of ic substrate cleaning equipment
CN111834260A (en) * 2014-05-29 2020-10-27 细美事有限公司 Apparatus for processing substrate

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10403517B2 (en) 2015-02-18 2019-09-03 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6489475B2 (en) * 2015-03-03 2019-03-27 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
JP7323674B1 (en) 2022-04-27 2023-08-08 セメス株式会社 Chemical liquid heating device and substrate processing system provided with same
CN115662937B (en) * 2022-12-29 2023-03-17 四川晶辉半导体有限公司 Chip mounting equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001110702A (en) * 1999-10-06 2001-04-20 Komatsu Electronics Inc Fluid heating equipment
CN101105361A (en) * 2006-07-14 2008-01-16 三星电子株式会社 Method of drying an object and apparatus for performing the same
CN101385128A (en) * 2006-02-13 2009-03-11 东京毅力科创株式会社 Substrate processing apparatus, substrate processing method and recording medium
KR20090074451A (en) * 2008-01-02 2009-07-07 세메스 주식회사 Chemicals supplying system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11253773A (en) * 1998-03-12 1999-09-21 Tokico Ltd Chemical liquid blending device
US20070070803A1 (en) * 1998-04-16 2007-03-29 Urquhart Karl J Point-of-use process control blender systems and corresponding methods
JP3756735B2 (en) * 2000-07-21 2006-03-15 東京エレクトロン株式会社 Process liquid temperature control method and apparatus
JP2004078348A (en) * 2002-08-12 2004-03-11 Advance Denki Kogyo Kk Method for controlling temperature by mixing of fluid
JP2006066727A (en) * 2004-08-27 2006-03-09 Toshiba Corp Semiconductor manufacturing device and chemical exchanging method
JP2006253447A (en) * 2005-03-11 2006-09-21 Toshiba Corp Method and device for manufacturing semiconductor
JP4758846B2 (en) * 2005-11-18 2011-08-31 東京エレクトロン株式会社 Drying apparatus, drying method, and drying program, and substrate processing apparatus, substrate processing method, and substrate processing program having the same
JP5173500B2 (en) * 2008-03-11 2013-04-03 大日本スクリーン製造株式会社 Processing liquid supply apparatus and substrate processing apparatus including the same
US8783040B2 (en) * 2010-02-25 2014-07-22 General Electric Company Methods and systems relating to fuel delivery in combustion turbine engines
JP5761521B2 (en) * 2010-06-07 2015-08-12 栗田工業株式会社 Cleaning system and cleaning method
JP5714449B2 (en) * 2011-08-25 2015-05-07 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
US20130283829A1 (en) * 2012-04-25 2013-10-31 Basf Se Method for providing a refrigerant medium in a secondary cycle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001110702A (en) * 1999-10-06 2001-04-20 Komatsu Electronics Inc Fluid heating equipment
CN101385128A (en) * 2006-02-13 2009-03-11 东京毅力科创株式会社 Substrate processing apparatus, substrate processing method and recording medium
CN101105361A (en) * 2006-07-14 2008-01-16 三星电子株式会社 Method of drying an object and apparatus for performing the same
KR20090074451A (en) * 2008-01-02 2009-07-07 세메스 주식회사 Chemicals supplying system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347452A (en) * 2013-08-01 2015-02-11 Psk有限公司 Reflow treating unit & substrate treating apparatus
CN104347452B (en) * 2013-08-01 2017-10-24 Psk有限公司 Reflow treatment unit and substrate board treatment
CN111834260A (en) * 2014-05-29 2020-10-27 细美事有限公司 Apparatus for processing substrate
WO2017088466A1 (en) * 2015-11-23 2017-06-01 宇宙电路板设备(深圳)有限公司 Wet chemical treating device for printed circuit board and wet chemical treating method for printed circuit board
CN107305854A (en) * 2016-04-22 2017-10-31 盛美半导体设备（上海）有限公司 A kind of ic substrate cleaning equipment
CN107305854B (en) * 2016-04-22 2021-05-14 盛美半导体设备(上海)股份有限公司 Integrated circuit substrate cleaning equipment

Also Published As

Publication number Publication date
US20130284367A1 (en) 2013-10-31
CN103377972B (en) 2016-12-28
JP2013232649A (en) 2013-11-14
JP5841096B2 (en) 2016-01-13

Similar Documents

Publication Publication Date Title
CN103377972A (en) Substrate processing apparatus and method of supplying processing solution
CN1996567B (en) Substrate carrying device, substrate carrying method
TWI483306B (en) Methods and apparatus for calibrating flow controllers in substrate processing systems
CN101107186B (en) Stage apparatus and application processing apparatus
US6569696B2 (en) Device and method for manufacturing semiconductor
KR102228490B1 (en) Substrate processing apparatus and liquid supply apparatus
CN107112226B (en) Substrate liquid processing apparatus
JP6211584B2 (en) Shared gas panels in plasma processing systems
JP6190278B2 (en) Heat exchange system and substrate processing apparatus having the same heat exchange system
KR20070077793A (en) Substrate cooling device, substrate cooling method, control program and computer readable storage medium
TW201405689A (en) Apparatus and method for liquid treatment of wafer-shaped articles
CN102024693A (en) Liquid processing apparatus for substrate, and method for generating processing liquid
JP2010087116A (en) Substrate processing apparatus
US11056357B2 (en) Substrate processing apparatus and substrate processing apparatus assembling method
CN202830169U (en) Chemical vapor deposition device for metal organic matters
KR101430750B1 (en) Apparatus for Processing Substrate and method for supplying fluid of the same
JP3535439B2 (en) Substrate processing equipment
CN209000886U (en) Baffle auto cleaning system in oxidation furnaces
CN108292597B (en) Liquid processing apparatus
KR101739807B1 (en) Fluid heating device
JP7303850B2 (en) Treatment liquid supply device and treatment liquid supply method
KR102022954B1 (en) Substrate treating facility and chemical supply apparatus
JP6346447B2 (en) Substrate processing equipment
WO2016098776A1 (en) Substrate liquid processing device
JP2003130992A (en) Iodine filter performance evaluation device and its operation method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant