CN103376484A - Method for producing grating by employing Lift-Off principle - Google Patents
Method for producing grating by employing Lift-Off principle Download PDFInfo
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- CN103376484A CN103376484A CN2012101059465A CN201210105946A CN103376484A CN 103376484 A CN103376484 A CN 103376484A CN 2012101059465 A CN2012101059465 A CN 2012101059465A CN 201210105946 A CN201210105946 A CN 201210105946A CN 103376484 A CN103376484 A CN 103376484A
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Abstract
The invention relates to the technical field of grating production and discloses a method for producing grating by employing a Lift-Off principle. To begin with, producing a photoresist holographic grating on a grating substrate; then, coating a dielectric film layer on the grating surface of the photoresist holographic grating by employing a coating deposition technique; and at last, washing a photoresist layer out and leaving the dielectric film layer deposited on the grating substrate so that a dielectric film grating is formed. During the coating deposition process, dielectric film materials are vertically deposited on the grating surface of the photoresist holographic grating and the thickness of the dielectric film layer is less than the photoresist groove depth of the photoresist holographic grating. The Lift-Off principle (lift-off technique) is employed to produce the dielectric film grating, so that etching of hard film materials is prevented, and meanwhile the production of the dielectric film grating with relatively-deep grooves is achieved; the grating production method is applicable to the replication of the holographic grating, helps in the design of increasing film layer structures and control the grating diffraction efficiency, and grating production efficiency is improved.
Description
Technical field
The present invention relates to the preparing grating technical field, relate in particular to the method that a kind of Lift-Off of employing principle is made grating.
Background technology
Grating is as a kind of good dispersion element, and at optical communication field, the spectral analysis field has obtained using widely.In recent years, the particularly appearance of photoetching process holographic grating technique and perfect has improved make efficiency and the grating quality of grating greatly.Make grating be able to playing a role in the field widely.
Photoetching process is made holographic grating technique and is obtained energetically development in recent years, and photoetching process and grating duplication technology be all constantly perfect, but still has certain limitation at present.---exposure---development---etching that the roughly technological process of adopting photoetching process to make holographic grating is: gluing.In order to improve diffraction efficiency of grating, reduce simultaneously the etching difficulty, usually can plate multilayer dielectric film in substrate, afterwards in gluing, exposure, development and etching.Adopt the photoetching process of etching behind this first plated film, still have at least two class problems: a class is that the photoetching degree of depth is not enough, adopt at present the lithographic technique etched diffraction gratings such as ion beam, only have the only a few material can etch into depth desired, and for most of materials, want to etch into the desirable degree of depth, technical difficulty is all larger; Another kind of is that some coating materials adopts the lithographic method such as beam-plasma to carry out etching, and etch rate is very low, the etching difficulty.
Patent " the Blazed holographic grating of United States Patent Office (USPO) bulletin, method for producing the same and replica grating " (" Production of blazed holographic grating, and the method for replica grating ", the patent No.: US 7455957 B2) a kind of method of replica grating is disclosed, its reproduction process is: first at master grating surface spraying last layer release agent, and then plate layer of metal film at release layer; Adopt afterwards a kind of thermoplastic adhesive that replica grating substrate and metallic diaphragm are bonded together; On releasing agent layer, master grating and replica grating are separated the grating that obtains copying at last.The method of this replica grating mainly is used in copying on the blazed grating, remain in some technical matterss and need to capture for copying of holographic grating, improve problem such as master grating groove etching depth, and after the depth of groove raising, the problems such as master grating and replica grating crowding phenomenon.
Summary of the invention
The present invention proposes the method that a kind of Lift-Off of employing principle is made grating, is applicable to copying of holographic grating, is conducive to increase design and the control diffraction efficiency of grating of film layer structure.
For achieving the above object, technical scheme proposed by the invention is: a kind of method that adopts the Lift-Off principle to make grating comprises the steps: a) to make the photoresist holographic grating at a grating substrate; B) adopt the coated film deposition technology to plate media coating at the grating face of photoresist holographic grating; C) eccysis photoresist layer stays and is deposited on the on-chip media coating of grating, consists of dielectric gratings; It is characterized in that: in the coated film deposition process, medium coating materials vertical deposition is on the grating face of photoresist holographic grating, and media coating thickness is lower than the photoresist groove depth of photoresist holographic grating.
Further, described coated film deposition technology is thermal evaporation plated film coupled ion bundle assistant depositing technology.
Further, described media coating is the single or multiple lift membrane structure, and coating materials is metal film or oxidation film.
Further, described metal film is Cr, Ni, Ti, Al, Au or Cu etc.; Described oxidation film is Si
3N
4, TiO
2Or Ta
2O
5Deng.
Further, the photoresist groove depth of described photoresist holographic grating is greater than 100 nanometers, and dutycycle is 0.1 ~ 0.8.
Further, in the manufacturing process, described coating materials and grating substrate temperature all are lower than the deformation temperature of photoresist.
Further, in the step c), adopt organic solvent or plasma that photoresist layer is cleaned removal; Described removing method is infusion method, spraying process or supercritical ultrasonics technology.
Further, described organic solvent is Tetramethylammonium hydroxide, NaOH, potassium hydroxide or acetone; Described plasma is oxygen plasma.
Further, described grating substrate adopts low-expansion optical polish plain film, such as optical materials such as fused quartzs.
Further, prepared dielectric gratings is transmission grating or reflection grating.
Beneficial effect of the present invention: the present invention adopts Lift-Off principle (lift-off technology) to make dielectric gratings, avoided the etching of some hard films based materials, can realize simultaneously the making of the dielectric gratings of darker depth of groove, be applicable to copying of holographic grating, be conducive to increase design and the control diffraction efficiency of grating of film layer structure, improved preparing grating efficient.
Description of drawings
Fig. 1-3 is the embodiment of the invention one synoptic diagram;
Fig. 4-5 is the embodiment of the invention two structural representations.
Description of symbols: 1, grating substrate; 2, photoresist; 3, coating materials, 3a, single-layer medium rete; 3b, multilayered medium rete.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
The present invention adopts the Lift-Off principle to make the method for grating, comprises the steps: a) to make the photoresist holographic grating at a grating substrate; B) adopt the coated film deposition technology to plate media coating at the grating face of photoresist holographic grating; C) eccysis photoresist layer stays and is deposited on the on-chip media coating of grating, consists of dielectric gratings; In the coated film deposition process, medium coating materials vertical deposition is on the grating face of photoresist holographic grating, and media coating thickness is lower than the photoresist groove depth of photoresist holographic grating; And in manufacturing process, coating materials and grating substrate temperature all are lower than the deformation temperature of photoresist.
Be embodiment one such as Fig. 1-3, concrete steps are: 1) make the photoresist holographic grating, be coated with last layer greater than the photoresist 2 of 100 nanometer thickness at grating substrate 1, optimum thickness is 1.5 ~ 3.0 micrometer ranges, the grating substrate 1 that coats photoresist 2 carried out holographic exposure and develop obtaining as shown in Figure 1 photoresist holographic grating, its dutycycle is 0.1 ~ 0.8; Wherein, grating substrate 1 is low-expansion optical polish plain films such as fused quartz, and the developer temperature is controlled in the 15-60 ℃ of scope, take 50 ℃ as best.2) be coated with deielectric-coating, adopt thermal evaporation plated film coupled ion bundle assistant depositing technology to plate single-layer medium rete 3a at the grating face of above-mentioned photoresist holographic grating, as shown in Figure 1, arrow represents the coating materials 3 of vertical direction, in the coated film deposition process, medium coating materials 3 vertical depositions are on the grating face of photoresist holographic grating, and single-layer medium rete 3a thickness is lower than the photoresist groove depth of photoresist holographic grating; In manufacturing process, coating materials 3 and grating substrate 1 temperature all are lower than the deformation temperature of photoresist 2.3) eccysis photoresist, the photoresist holographic grating that has plated rete is put into acetone solvent, and place the Ultrasonic Cleaning pond to carry out Ultrasonic Cleaning, after photoresist is removed totally, oven dry, finally obtain being deposited on the single-layer medium rete 3a on the grating substrate 1, consist of dielectric gratings with grating substrate 1.
Wherein, medium coating materials 3 can be the metal films such as Cr, Ni, Ti, Al, Au or Cu, also can be SiO
2, Ta
2O
5Or Al
2O
3Deng oxide film.The solvent of removing photoresist also can adopt the organic solvents such as Tetramethylammonium hydroxide, NaOH, potassium hydroxide, or oxygen plasma etc., and then cleans removal with modes such as infusion method, spraying process or supercritical ultrasonics technologies.
Be depicted as the embodiment of the invention two such as Figure 4 and 5, its method for making is similar to embodiment one, and different is in coating process, has adopted the rete of three kinds of different materials, has formed the structure of three layer dielectric layer 3b.During plated film, the gross thickness of three layer dielectric layer 3b will be lower than the photoresist groove depth of photoresist holographic grating.
The method can be used for making transmission-type grating or reflective gratings.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but the those skilled in the art should be understood that; within not breaking away from the spirit and scope of the present invention that appended claims limits; the various variations of in the form and details the present invention being made are protection scope of the present invention.
Claims (10)
1. a method that adopts the Lift-Off principle to make grating comprises the steps: a) to make the photoresist holographic grating at a grating substrate; B) adopt the coated film deposition technology to plate media coating at the grating face of photoresist holographic grating; C) eccysis photoresist layer stays and is deposited on the on-chip media coating of grating, consists of dielectric gratings; It is characterized in that: in the coated film deposition process, medium coating materials vertical deposition is on the grating face of photoresist holographic grating, and media coating thickness is lower than the photoresist groove depth of photoresist holographic grating.
2. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1, it is characterized in that: described coated film deposition technology is thermal evaporation plated film coupled ion bundle assistant depositing technology.
3. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1, it is characterized in that: described media coating is the single or multiple lift membrane structure, coating materials is metal film or oxidation film.
4. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 3, it is characterized in that: described metal film is Cr, Ni, Ti, Al, Au or Cu; Described oxidation film is SiO
2, Ta
2O
5Or Al
2O
3
5. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1, it is characterized in that: the photoresist groove depth of described photoresist holographic grating is greater than 100 nanometers, and dutycycle is 0.1 ~ 0.8.
6. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1, it is characterized in that: in the manufacturing process, described coating materials and grating substrate temperature all are lower than the deformation temperature of photoresist.
7. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1 is characterized in that: in the step c), adopt organic solvent or plasma that photoresist layer is cleaned removal; Described removing method is infusion method, spraying process or supercritical ultrasonics technology.
8. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 7, it is characterized in that: described organic solvent is Tetramethylammonium hydroxide, NaOH, potassium hydroxide or acetone; Described plasma is oxygen plasma.
9. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1, it is characterized in that: described grating substrate adopts low-expansion optical polish plain film.
10. a kind of method that adopts the Lift-Off principle to make grating as claimed in claim 1, it is characterized in that: prepared dielectric gratings is transmission grating or reflection grating.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105296942A (en) * | 2015-12-04 | 2016-02-03 | 北极光电(深圳)有限公司 | Method adopting photoetching mask lifting method for achieving optical coating |
Citations (6)
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|---|---|---|---|---|
| US20050130072A1 (en) * | 2003-11-27 | 2005-06-16 | Shimadzu Corporation | Blazed holographic grating, method for producing the same and replica grating |
| CN101101344A (en) * | 2006-07-07 | 2008-01-09 | 中国科学院长春光学精密机械与物理研究所 | IV type concave holographic grating production process |
| CN101738662A (en) * | 2008-11-12 | 2010-06-16 | 中国科学院半导体研究所 | Method for preparing hundred nano grade narrow line width holographic grating photoresist pattern with various features |
| CN102053509A (en) * | 2010-12-09 | 2011-05-11 | 西安交通大学 | Method for manufacturing raised grating alignment mark in imprinting lithography |
| CN102323634A (en) * | 2011-10-19 | 2012-01-18 | 苏州大学 | Manufacturing method for holographic dual-blazed grating |
| CN102360093A (en) * | 2011-10-19 | 2012-02-22 | 苏州大学 | Holographic blazed grating manufacturing method |
-
2012
- 2012-04-12 CN CN2012101059465A patent/CN103376484A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050130072A1 (en) * | 2003-11-27 | 2005-06-16 | Shimadzu Corporation | Blazed holographic grating, method for producing the same and replica grating |
| CN101101344A (en) * | 2006-07-07 | 2008-01-09 | 中国科学院长春光学精密机械与物理研究所 | IV type concave holographic grating production process |
| CN101738662A (en) * | 2008-11-12 | 2010-06-16 | 中国科学院半导体研究所 | Method for preparing hundred nano grade narrow line width holographic grating photoresist pattern with various features |
| CN102053509A (en) * | 2010-12-09 | 2011-05-11 | 西安交通大学 | Method for manufacturing raised grating alignment mark in imprinting lithography |
| CN102323634A (en) * | 2011-10-19 | 2012-01-18 | 苏州大学 | Manufacturing method for holographic dual-blazed grating |
| CN102360093A (en) * | 2011-10-19 | 2012-02-22 | 苏州大学 | Holographic blazed grating manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 吴娜等: "基于精密刻划及薄膜沉积技术的光盘分束光栅研制", 《光学精密工程》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105296942A (en) * | 2015-12-04 | 2016-02-03 | 北极光电(深圳)有限公司 | Method adopting photoetching mask lifting method for achieving optical coating |
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Application publication date: 20131030 |