CN103374701A - Reaction gas sputtering device - Google Patents
Reaction gas sputtering device Download PDFInfo
- Publication number
- CN103374701A CN103374701A CN2012101153912A CN201210115391A CN103374701A CN 103374701 A CN103374701 A CN 103374701A CN 2012101153912 A CN2012101153912 A CN 2012101153912A CN 201210115391 A CN201210115391 A CN 201210115391A CN 103374701 A CN103374701 A CN 103374701A
- Authority
- CN
- China
- Prior art keywords
- sputtering apparatus
- reactant gases
- ion source
- sputter cavity
- gas ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a reaction gas sputtering device. A reaction sputtering cavity is internally provided with at least one auxiliary anode gas ion source, when a sputtering manufacture procedure is carried out, residual metal atoms which are not deposited onto a base plate are sputtered to the inner wall or a shield plate of the reaction sputtering cavity, the metal atom residue can give rise to the following danger caused by the non-oxidation, so that the residual metal atoms are oxidized into the safe metallic oxide due to the auxiliary anode gas ion sources.
Description
Technical field
The present invention relates to a kind of reactant gases sputtering apparatus, relating in particular to provides a kind of anodic gas ionogenic project organization, its installation position from the conventional ion source is different, and ionogenic Way out and general opposite direction, even can move, make not to be deposited on substrate, and splash to the residual metal atom of the inwall that reacts the sputter cavity or masking shield is able to oxidized sputtering apparatus.
Background technology
In electronic industry or the semiconductor applications, sputter process is inseparable with above-mentioned field already, optical field particularly, so-called sputter process is utilized electric field to make between two electrodes and is produced electronics, these accelerate electrons and rare gas element, such as argon gas, collision, and make the electronics positively charged, the ion of these positively chargeds can be subjected to magnetic control cathode assembly (magnetron Magnetron)) in negative electrode attract and the bump metal targets, metal targets is subject to the extruding of intert-gas atoms bump, and atomic collision is gone out, the atoms metal that these are gone out by collision is deposited on substrate at last, to form a metallic film, this metallic film passes through the ionogenic chemical reaction of anodic gas again, and anode oxygen ion source also can be the nitrogen ion source, becomes at last metal oxide, but at cavity wall and the metal residues particle above the masking shield, then not oxidized by splash.
Though above-mentioned sputter process is the applied optics field widely, if but use MAGNESIUM METAL as target in the sputter process, just essential extreme care, because if one presents chunk form or slab form such as the thick target of 6mm, still belong to safety, if but the magnesium metal becomes filminess or detail mode even is the state of a pile powder, just be very easy to burning, and this burning is to be difficult to put out, if making water puts out a fire, when then magnesium contacted with water, magnesium can produce violent chemical reaction and produce hydrogen, burning more violent.In sputter; remaining magnesium atom can form the magnesium paper tinsel gradually in the inwall of reaction sputter cavity; or form gradually the magnesium of slice wire in the inwall crevice place of cavity; although but the inside of the cooling system cavity temperature that still can raise is gradually arranged in sputter; do not wait from 60 ℃～120 ℃; especially in the blow-on door, contact a large amount of oxygen; often can be difficult for putting out by catching fire; if contact with the water of cooling system; violent chemical reaction occurs and produces a large amount of hydrogen in moment, may jeopardize the staff of cleaning reaction sputter cavity, and the factory building of reaction sputter cavity perhaps is set; cause public danger, have to be prudent in dealing with.
When yet magnesium becomes magnesium oxide MgO after peroxidation, magnesium oxide contacts with water, then can not produce other bad chemical reactions, because magnesium oxide is the compound of a quite stable, so how to make the remaining magnesium atom that is not deposited on substrate be oxidized to magnesium oxide space open to discussion just be arranged.
Summary of the invention
Because above-mentioned shortcoming, the object of the present invention is to provide a kind of can be with the reactant gases sputtering apparatus of residual metal atom oxidation, it has a general reaction sputter cavity, one rotating drum body is arranged within its cavity, at least one magnetron cathode sputtering apparatus (magnetron), at least one anodic gas ion source is towards this rotating drum body, inert gas source and the diffuser etc. of bleeding, way of the present invention is within its reaction sputter cavity, further being provided with at least one can be with the so-called supplementary anode gas ion source of residual metal atom oxidation, it is located on this drum body, and this ionogenic outlet is the inwall towards the sputter cavity, with originally general anodic gas ion source towards direction by chance opposite, and with this drum body interlock, or this supplementary anode gas ion source, it is located between the inwall of this drum body and this reaction sputter cavity rotationally, and its ionogenic outlet is towards the sputter cavity inner wall, or its ionogenic outlet is towards cavity inner wall and simultaneously towards towards this drum body, with cavity inner wall and drum body by splash the atoms metal of many remnants, be oxidized into oxide compound, so even can replace originally general anodic gas ion source, atoms metal on not only can oxidase substrate, become the optical thin film layer of metal oxide, simultaneously can be with the atoms metal of cavity inner wall remnants, be oxidized into oxide compound, kill two birds with one stone, or setting can be born cathode oxidation plate or the cathode oxidation wall of the splash of metal residues particle in addition, the cathode oxidation plate is arranged on the reaction sputter cavity, lower inwall and inwall all around, to install in the mode of electric insulation, same function can extend to the matte that blocks magnetron cathode sputtering apparatus (magnetron) splash, or the ionogenic auxiliary cathode oxidation of anodic gas plate and then, and the cathode oxidation wall is the inwall of reaction sputter cavity, with respect to the anode of supplementary anode gas ion source and its inwall is set to negative electrode, or the cathode oxidation plate is set to separately independently negative electrode, cathode oxidation plate or cathode oxidation wall have been assembled many residual metal atoms, at least one supplementary anode gas ion source provides gaseous ion, such as oxonium ion, this gaseous ion is anode, these splashes of forced oxidation are in the residual metal atom of cathode oxidation plate or cathode oxidation wall by this, and make the residual metal atom form metal oxide, if this metal oxide contacts with air or water in the future, then can not produce any chemical reaction, so can guarantee to clear up the staff of reaction sputter cavity, the safety of the factory building of reaction sputter cavity perhaps is set.
To achieve the above object, technique means of the present invention be to provide a kind of can be with the residual metal atom, give the reactant gases sputtering apparatus of oxidation, it mainly contains drum body and the supplementary anode gas ion source that is arranged on the drum body, and above-mentioned reaction sputtering apparatus includes at least:
One reaction sputter cavity;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is to be located at rotationally in this reaction sputter cavity; And
At least one supplementary anode gas ion source, it is located at this drum body, and with this drum body interlock.
To achieve the above object, technique means of the present invention is to provide a kind of can will react residual metal atom in the sputter cavity, give the reactant gases sputtering apparatus of oxidation, it mainly contains the drum body, is arranged at supplementary anode gas ion source and cathode oxidation plate on the drum body, and above-mentioned reactant gases sputtering apparatus includes at least:
One reaction sputter cavity;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is to be located at rotationally in this reaction sputter cavity; And
At least one supplementary anode gas ion source, it is located at this drum body, and with this drum body interlock; And
Need oxidized object to include: its polarity of inwall of a reaction sputter cavity is negative electrode, or the inwall place of this cavity cathode oxidation plate that to be provided with a plurality of its polarity be negative electrode, or the inwall place of this cavity cathode oxidation matte that to be provided with a plurality of its polarity be negative electrode, above-described negative electrode is the anode with respect to the supplementary anode gas ion source, and becomes a loop with it.
The present invention provides again a kind of can will react residual metal atom in the sputter cavity, give the reactant gases sputtering apparatus of oxidation, its mainly contain the drum body and be arranged at this drum body and the inwall of this reaction sputter cavity between the supplementary anode gas ion source, above-mentioned reactant gases sputtering apparatus includes at least:
One reaction sputter cavity;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is to be located at rotationally in this reaction sputter cavity; And
At least one supplementary anode gas ion source, it is located between the inwall of this drum body and this reaction sputter cavity rotationally.
The present invention provides again a kind of can will react residual metal atom in the sputter cavity, give the reactant gases sputtering apparatus of oxidation, it mainly contains the drum body, be arranged at supplementary anode gas ion source and cathode oxidation plate between the inwall of this drum body and this reaction sputter cavity, and above-mentioned reactant gases sputtering apparatus includes at least:
One reaction sputter cavity; And
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is rotatably to be located in this reaction sputter cavity; And
At least one supplementary anode gas ion source, it is located between the inwall of this drum body and this reaction sputter cavity; And
Need oxidized object to include: its polarity of inwall of a reaction sputter cavity is negative electrode, or the inwall place of this cavity cathode oxidation plate that to be provided with a plurality of its polarity be negative electrode, or the inwall place of this cavity cathode oxidation matte that to be provided with a plurality of its polarity be negative electrode, or this cavity in the drum body its polarity of wall be negative electrode, above-described negative electrode is the anode with respect to the supplementary anode gas ion source, and becomes a loop with it.
The present invention provides again a kind of can will react residual metal atom in the sputter cavity, give the reactant gases sputtering apparatus of oxidation, it mainly contains the drum body, is located at supplementary anode gas ion source and the cathode oxidation plate of the inwall of this reaction sputter cavity, and above-mentioned reactant gases sputtering apparatus includes at least:
One reaction sputter cavity; And
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is rotatably to be located in this reaction sputter cavity; And
At least one supplementary anode gas ion source, it is located at the inwall of this reaction sputter cavity; And
Need oxidized object to include: the cathode oxidation plate that it is negative electrode that the inwall place of this cavity is provided with a plurality of its polarity, or the inwall place of this cavity cathode oxidation matte that to be provided with a plurality of its polarity be negative electrode, above-described negative electrode is the anode with respect to the supplementary anode gas ion source of being located at inwall, and becomes a loop with it.
The present invention provides again a kind of can will react residual metal atom in the sputter cavity, give the reactant gases sputtering apparatus of oxidation, it mainly contains roller, is located at supplementary anode gas ion source and cathode oxidation plate in this reaction sputter cavity, and above-mentioned reactant gases sputtering apparatus includes at least:
One reaction sputter cavity;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
A plurality of rollers, it is located at the bottom of this reaction sputter cavity;
At least one supplementary anode gas ion source, it is located in this reaction sputter cavity; And
A plurality of its polarity of cathode oxidation plate are negative electrode, and it is located at the inwall place of this reaction sputter cavity, and described negative electrode is the anode with respect to the supplementary anode gas ion source, and becomes a loop with it.
Comprehensively above-mentioned, reactant gases sputtering apparatus of the present invention, it provides cathode oxidation plate or the cathode oxidation wall of at least one residual metal atom splash for not being deposited on substrate, and make the residual metal atoms in cathode oxidation plate or cathode oxidation wall, for example, this atoms metal can be magnesium ion, the supplementary anode gas ion source provides gaseous ion, such as oxonium ion, gaseous ion is combined with this residual metal atom, and makes this residual metal atom oxidation form metal oxide, such as magnesium oxide (Magnesium Oxide, MgO), if this metal oxide contacts with air or water, or in the environment of high temperature, can not produce bad chemical reaction, so the staff of cleaning sputter cavity reaction sputter cavity, the security that the factory building of sputter cavity reaction sputter cavity perhaps is set is just guaranteed.
Description of drawings
Fig. 1 is the top cross-sectional view of the first embodiment of a kind of reactant gases sputtering apparatus of the present invention;
Fig. 2 is the side-looking diagrammatic cross-section of the first embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 3 is the top cross-sectional view of the second embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 4 is the side-looking diagrammatic cross-section of the 3rd embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 5 is the side-looking diagrammatic cross-section of the 3rd embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 6 is the top cross-sectional view of the 4th embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 7 is the side-looking diagrammatic cross-section of the 4th embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 8 is the top cross-sectional view of the 5th embodiment of reactant gases sputtering apparatus of the present invention;
Fig. 9 is the side-looking diagrammatic cross-section of the 5th embodiment of reactant gases sputtering apparatus of the present invention;
Figure 10 is the side-looking diagrammatic cross-section of the 6th embodiment of reactant gases sputtering apparatus of the present invention;
Figure 11 is the side-looking diagrammatic cross-section of the 6th embodiment of reactant gases sputtering apparatus of the present invention;
Figure 12 is the side-looking diagrammatic cross-section of the 7th embodiment of reactant gases sputtering apparatus of the present invention.
Description of reference numerals: 10-reaction sputter cavity; 10A-reaction sputter cavity; 100A-cathode oxidation wall; 11-anodic gas ion source; The 12-inert gas source; 13-cathode oxidation plate; 130-auxiliary cathode oxidation plate; The 14-insulation support body; The 15-matte; The 16-target; 17-magnetron cathode sputtering apparatus; 18-drum body; The 180-substrate; The 19-off-gas pump; 20-supplementary anode gas ion source; 20A-supplementary anode gas ion source; 20B-supplementary anode gas ion source; The 21A-counterweight; 30-reaction sputter cavity; The 31-roller; The 32-target; 33-is controlled sputtering apparatus; 34-anodic gas ion source; 35-supplementary anode gas ion source; 36-cathode oxidation plate; The 37-insulation support body; The 38-substrate; The 39-off-gas pump.
Embodiment
Please cooperate with reference to figure 1 with shown in Figure 2, the present invention is a kind of the first embodiment of reactant gases sputtering apparatus, and it has a reaction sputter cavity 10, at least one anodic gas ion source 11, at least one inert gas source 12, a plurality of cathode oxidation plate 13, a plurality of insulation support body 14, a plurality of matte 15, at least one selectivity target 16, at least one magnetron cathode sputtering apparatus 17, a drum body 18, a plurality of substrate 180, at least one off-gas pump 19, a supplementary anode gas ion source 20 and at least one counterweight 21.
The inwall place of reaction sputter cavity 10 is located in anodic gas ion source 11 and rare gas element q source 12, and under the situation that reality is used, and the two can share anodic gas ion source 11 and inert gas source 12, and the gas of anodic gas ion source 11 can be oxygen.
Two insulation support bodies 14 are located between the inwall of each cathode oxidation plate 13 and reaction sputter cavity 10, so that cathode oxidation plate 13 is located at the inwall place of reaction sputter cavity 10, the purpose of a plurality of cathode oxidation plates 13 is to implement the oxygenizement in the zone of a plurality of settings, so as not to be subject to the far and near impact of distance so that some regional oxygenizement always too a little less than, and cause metallics therefore remaining.
At least two mattes 15 are located in the reaction sputter cavity 10, and adjacent to cathode oxidation plate 13, wherein insulation support body 14 is the negative electrode that makes each matte 15, a plurality of matte 15 and a plurality of cathode oxidation plates 13, is located at the inwall place of reaction sputter cavity 10 in the mode of electric insulation.
Magnetron cathode sputtering apparatus 17 is located between two mattes 15.
Off-gas pump 19 is located at the bottom of reaction sputter cavity 10, the gas in the off-gas pump 19 abstraction reaction sputter cavitys 10 as shown in Figure 2.
Supplementary anode gas ion source 20 is located in the drum body 18, in present embodiment, supplementary anode gas ion source 20 is located at a side of drum body 18, so that supplementary anode gas ion source 20 and drum body 18 interlocks, the pipeline of supplementary anode gas ion source 20 extends to drum body 18 centers, and extend to again the bottom of drum body 18, or its oxygen bottle and control air valve be located among the drum body 18, and supplementary anode gas ion source 20 is in the face of the inwall of reaction sputter cavity 10, therefore the Way out of supplementary anode gas ion source 20 is that Way out with anodic gas ion source 11 is for facing one another.In addition, the oxygen bottle of being located in the drum body 18 can be along with 18 rotations of drum body with the control air valve.
As shown in Figures 1 and 2, substrate 180 is located at drum body 18 sidewalls, inert gas source 12 provides rare gas element, such as argon gas, indifferent gas is known from experience and is accelerated electronics and mutually collide, and formation positive electricity electronics, the negative electrode that the positive electricity electronics is subject to magnetron cathode sputtering apparatus 17 attracts and bump target 16, this atoms metal of atoms metal that the target 16 that is clashed into forms splash passes through the attraction of electric field again, be deposited on substrate 180, for example, this atoms metal can be deposited on substrate 180 for the magnesium atoms metal, to form a magnesium metallic film.
The residual metal atom that is not deposited on substrate 180 then may splash be got back to cathode oxidation plate 13, so this residual metal atoms is in cathode oxidation plate 13, this residual metal atom is aforesaid magnesium atom, 11 in good time evolved gas ions of supplementary anode gas ion source, such as oxonium ion, gaseous ion is anode, and make this residual metal atom oxidation, to form metal oxide, for example, this metal oxide can be magnesium oxide, and as mentioned above, inert gas source 12 also can change to the anodic gas ion source in good time, and discharge the carrier of oxygen ion, with the magnesium atoms metal oxidation of splash to the substrate 180, to form layer of metal oxide compound magnesium oxide optical thin film, so repeatedly operate and finish multilayer optical film eyeglass etc.
Supplementary anode gas ion source 20 is the rotation shape, it is the position that supplementary anode gas ion source 20 goes to, supplementary anode gas ion source 20 is just for this position evolved gas ion, and make the residual metal atom oxidation of the cathode oxidation plate 13 of this position, promote by this residual metal atom oxidation effectiveness, in addition, anodic gas ion source 11 is a variable more inert gas source also, wanting ben at this is, all supplementary anode gas ion sources can be the ion sources for many group apertures herein, but can also use the linear anodic gas ion source of at least one group leader's bar shaped to form.
Please cooperate with reference to shown in Figure 3, the present invention is the second embodiment of reactant gases sputtering apparatus, present embodiment is the further extension of the first embodiment, so the setting position of reaction sputter cavity 10, inert gas source 12, cathode oxidation plate 13, insulation support body 14, matte 15, target 16, magnetron cathode sputtering apparatus 17, drum body 18, substrate 180, off-gas pump 19 and counterweight 21 is such as the first embodiment.
In present embodiment, supplementary anode gas ion source 20A is located at a side of drum body 18, and the two ends of supplementary anode gas ion source 20A extend to respectively top and the bottom of drum body 18.
Please cooperate with reference to figure 4 with shown in Figure 5, the present invention is the 3rd embodiment of reactant gases sputtering apparatus, present embodiment is the further extension of the first embodiment, so the setting position of reaction sputter cavity 10, anodic gas ion source 11, inert gas source 12, cathode oxidation plate 13, insulation support body 14, matte 15, target 16, magnetron cathode sputtering apparatus 17, drum body 18, substrate 180, off-gas pump 19 and counterweight 21 is such as the first embodiment.
In present embodiment, supplementary anode gas ion source 20B is located between the inwall of drum body 18 and reaction sputter cavity 10, and supplementary anode gas ion source 20B can rotate with respect to the inwall of reaction sputter cavity 10, extend towards the top of drum body 18 and bottom direction respectively at the two ends of supplementary anode gas ion source 20B, and contact drum wheel body 18 not.
Please cooperate with reference to figure 6 with shown in Figure 7, the present invention is the 4th embodiment of reactant gases sputtering apparatus, in present embodiment, part adopts the first embodiment, so component symbol adopts the first embodiment, the setting position of anodic gas ion source 11, inert gas source 12, insulation support body 14, matte 15, target 16, magnetron cathode sputtering apparatus 17, drum body 18, substrate 180 and off-gas pump 19 is such as the first embodiment, and the setting of supplementary anode gas ion source 20B is such as the 3rd embodiment.
In present embodiment, the inwall of reaction sputter cavity 10A is cathode oxidation wall 100A, and counterweight 21A is located at adjacent to the top of drum body 18 and bottom.
Each embodiment as the aforementioned, the residual metal atoms is in the cathode oxidation wall, matte 15, below the top and drum body 18 of drum body 18, anodic gas ion source 11 evolved gas ions, so that the atoms metal oxidation on the substrate 180, and the further evolved gas ion of the supplementary anode gas ion source 20B that is rotation, be gathered in the residual metal atom of cathode oxidation wall with oxidation, and oxidation its be gathered in matte 15, above the drum body 18, and the following residual metal atom that is gathered in drum body 18, and then the security of lifting oxidation residual metal atom.
Please cooperate with reference to figure 8 with shown in Figure 9, the present invention is the 5th embodiment of reactant gases sputtering apparatus, in present embodiment, part adopts the first embodiment, so component symbol adopts the first embodiment, the setting position of anodic gas ion source 11, inert gas source 12, insulation support body 14, matte 15, target 16, magnetron cathode sputtering apparatus 17, drum body 18, substrate 180 and off-gas pump 19 is such as the first embodiment, and the setting of supplementary anode gas ion source 20A is reacted sputter cavity 10A and cathode oxidation wall 100A such as the 4th embodiment such as the second embodiment.
To shown in Figure 9, supplementary anode gas ion source 20A, 20B extend to top and the bottom of drum body 18 such as Fig. 3, and it strengthens the effect of supplementary anode gas ion source 20A, 20B evolved gas ion, and then increase the effect of residual metal atom oxidation.In addition, device is at the anodic gas ion source 11 of reaction sputter cavity 10A, and one of them group can also extend to the inwall upper and lower surface of reaction sputter cavity 10A, and the top of drum body 18 and the atoms metal on the bottom are oxidized into oxide compound.
Particularly point out such as Fig. 1 to shown in Figure 9 at this, or the first embodiment to the five embodiment in, its insulation support body, matte, cathode oxidation wall, cathode oxidation plate and auxiliary cathode oxidation plate etc. all can make up mutually, do not limit, also visual demand and add cathode oxidation plate and auxiliary cathode oxidation plate etc. when adopting the cathode oxidation wall, neither add as for insulation support body, because the earth namely has the electric loop of stray capacity, for high-voltage electric field, near the close region of high-voltage electric field, the object of low insulation still can electrification.
Please cooperate with reference to Figure 10 and shown in Figure 11, the present invention is the 5th embodiment of reactant gases sputtering apparatus, and it includes a reaction sputter cavity 30, a plurality of roller 31, at least one selectivity target 32, at least one magnetron cathode sputtering apparatus 33, at least one anodic gas ion source 34, at least one supplementary anode gas ion source 35, a plurality of cathode oxidation plate 36, a plurality of insulation support body 37, at least one substrate 38 and an off-gas pump 39.
Magnetron cathode sputtering apparatus 33 is located in the reaction sputter cavity 30, and target 32 is located at magnetron cathode sputtering apparatus 33, and as the first embodiment, target 32 is the magnesium plate.
Anodic gas ion source 34 is located at respectively in the reaction sputter cavity 30 with supplementary anode gas ion source 35, and anodic gas ion source 34 can further be combined with an inert gas source, in addition, for real use state, the two can replace anodic gas ion source 34 and supplementary anode gas ion source 35 mutually, and namely anodic gas ion source 34 can replace with supplementary anode gas ion source 35 or supplementary anode gas ion source 35 can replace with anodic gas ion source 34.
Two insulation support bodies 37 are located between the inwall of each cathode oxidation plate 36 and reaction sputter cavity 30, so that cathode oxidation plate 36 is located at the inwall place of reaction sputter cavity 30.
Off-gas pump 39 is located at a side of reaction sputter cavity 30.
As previously mentioned, the target 32 that is clashed into produces atoms metal, atoms metal is deposited on the substrate 38 of being carried by roller 31, and be not deposited on the residual metal atom of substrate 38, then splash is in cathode oxidation plate 36, so this residual metal atoms is in cathode oxidation plate 36, anodic gas ion source 34 and 35 in good time evolved gas ions of supplementary anode gas ion source, such as oxonium ion, being one by one with the cathode oxidation plate of in turn start, electric loop cooperates, and make this residual metal atom oxidation, to form metal oxide.
Please cooperate with reference to shown in Figure 12, the present invention is the 6th embodiment of reactant gases sputtering apparatus, in present embodiment, reaction sputter cavity 30, roller 31, target 32, magnetron cathode sputtering apparatus 33, cathode oxidation plate 36, insulation support body 37, substrate 38 and off-gas pump 39 as the 5th embodiment, its discrepancy is, in present embodiment, reaction sputter cavity 30 is provided with at least one supplementary anode gas ion source 35, and the anodic gas ion source then with by supplementary anode gas ion source 35 substitutes.
Comprehensively above-mentioned, the cathode oxidation plate attracts not to be deposited on the residual metal atom of substrate, and this residual metal atom splash is in the cathode oxidation plate, so this residual metal atoms is in the cathode oxidation plate, the supplementary anode gas ion source is in good time evolved gas ion then, such as oxonium ion, and make this residual metal atom oxidation, to form metal oxide, metal oxide is comparatively stable, if when contacting with air or water, then can not produce any chemical reaction, so the staff of cleaning reaction sputter cavity, the security that the factory building of reaction sputter cavity perhaps is set is just guaranteed.
More than these embodiment only be exemplary, scope of the present invention is not consisted of any restriction.It will be understood by those skilled in the art that lower without departing from the spirit and scope of the present invention and can make amendment or replace the details of technical solution of the present invention and form, but these modifications and replacing all fall within the scope of protection of the present invention.
Claims (40)
1. reactant gases sputtering apparatus, it includes:
One reaction sputter cavity;
A plurality of cathode oxidation plates, it is located at the inwall place of this reaction sputter cavity;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is rotatably to be located in this reaction sputter cavity; And
One supplementary anode gas ion source, it is located at this drum body, and with this drum body interlock.
2. reactant gases sputtering apparatus as claimed in claim 1 is characterized in that, this supplementary anode gas ion source is in the face of the inwall of this reaction sputter cavity.
3. reactant gases sputtering apparatus as claimed in claim 1, it is characterized in that, further have a plurality of mattes, it is located in this reaction sputter cavity, and adjacent to this cathode oxidation plate, and this magnetron cathode sputtering apparatus is between two mattes, and wherein this matte can change to a cathode oxidation plate.
4. reactant gases sputtering apparatus as claimed in claim 1, it is characterized in that, further have a plurality of insulation support bodies, this insulation support body is located between the inwall of this cathode oxidation plate and this reaction sputter cavity, and between the inwall of this matte and this reaction sputter cavity.
5. reactant gases sputtering apparatus as claimed in claim 1 is characterized in that, this magnetron cathode sputtering apparatus further is provided with a target.
6. reactant gases sputtering apparatus as claimed in claim 5 is characterized in that, this target is the magnesium plate.
7. reactant gases sputtering apparatus as claimed in claim 1 is characterized in that, this cathode oxidation plate be each other storehouse and not the contact or mutually press close to and not the contact.
8. reactant gases sputtering apparatus as claimed in claim 1 is characterized in that, extend towards top and the bottom direction of this drum body respectively at the two ends of this supplementary anode gas ion source.
9. reactant gases sputtering apparatus as claimed in claim 1 is characterized in that, the gas of this supplementary anode gas ion source is oxygen.
10. reactant gases sputtering apparatus, it includes:
One reaction sputter cavity;
A plurality of cathode oxidation plates, it is located at the inwall place of this reaction sputter cavity;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is rotatably to be located in this reaction sputter cavity; And
One supplementary anode gas ion source, it is located between the inwall of this drum body and this reaction sputter cavity rotationally.
11. reactant gases sputtering apparatus as claimed in claim 10 is characterized in that, this supplementary anode gas ion source is respectively in the face of the inwall of this reaction sputter cavity and the sidewall of this drum body.
12. reactant gases sputtering apparatus as claimed in claim 10, it is characterized in that, further have a plurality of mattes, it is located in this reaction sputter cavity, and adjacent to this cathode oxidation plate, and this magnetron cathode sputtering apparatus is between two mattes, and wherein this matte can change to a cathode oxidation plate.
13. reactant gases sputtering apparatus as claimed in claim 10, it is characterized in that, further have a plurality of insulation support bodies, this insulation support body is located between the inwall of this cathode oxidation plate and this reaction sputter cavity, and between the inwall of this matte and this reaction sputter cavity.
14. reactant gases sputtering apparatus as claimed in claim 10 is characterized in that, this magnetron cathode sputtering apparatus further is provided with a target.
15. reactant gases sputtering apparatus as claimed in claim 14 is characterized in that, this target is the magnesium plate.
16. reactant gases sputtering apparatus as claimed in claim 10 is characterized in that, this cathode oxidation plate be each other storehouse and not the contact or mutually press close to and not the contact.
17. reactant gases sputtering apparatus as claimed in claim 10 is characterized in that, extend towards top and the bottom direction of this drum body respectively at the two ends of this supplementary anode gas ion source.
18. reactant gases sputtering apparatus as claimed in claim 10 is characterized in that, this supplementary anode gas ion source and the ionogenic gas of this anodic gas are oxygen.
19. a reactant gases sputtering apparatus, it includes:
One reaction sputter cavity, its inwall is a cathode oxidation wall;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is rotatably to be located in this reaction sputter cavity; And
One supplementary anode gas ion source, it is located at this drum body, and this supplementary anode gas ion source and this drum body interlock.
20. reactant gases sputtering apparatus as claimed in claim 19 is characterized in that, this supplementary anode gas ion source is in the face of this cathode oxidation wall.
21. reactant gases sputtering apparatus as claimed in claim 19, it is characterized in that further having a plurality of mattes, it is located in this reaction sputter cavity, and this magnetron cathode sputtering apparatus is between two mattes, and wherein this matte can change to a cathode oxidation plate.
22. reactant gases sputtering apparatus as claimed in claim 19 is characterized in that, further has a plurality of insulation support bodies, this insulation support body is located between the inwall of this matte and this reaction sputter cavity.
23. reactant gases sputtering apparatus as claimed in claim 19 is characterized in that, this magnetron cathode sputtering apparatus further is provided with a target.
24. reactant gases sputtering apparatus as claimed in claim 23 is characterized in that, this target is the magnesium plate.
25. reactant gases sputtering apparatus as claimed in claim 19 is characterized in that, the gas of this supplementary anode gas ion source is oxygen.
26. a reactant gases sputtering apparatus, it includes:
One reaction sputter cavity, its inwall is a cathode oxidation wall;
At least one magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity; And
At least one anodic gas ion source, it is located at this reaction sputter cavity inner wall; And
One drum body, it is rotatably to be located in this reaction sputter cavity; And
One supplementary anode gas ion source, it is located between this drum body and this cathode oxidation wall.
27. reactant gases sputtering apparatus as claimed in claim 26 is characterized in that, this supplementary anode gas ion source is faced respectively the sidewall of this cathode oxidation wall and this drum body.
28. reactant gases sputtering apparatus as claimed in claim 26, it is characterized in that further having a plurality of mattes, it is located in this reaction sputter cavity, and this magnetron cathode sputtering apparatus is between two mattes, and wherein this matte can change to a cathode oxidation plate.
29. reactant gases sputtering apparatus as claimed in claim 26 is characterized in that, further has a plurality of insulation support bodies, this insulation support body is located between the inwall of this matte and this reaction sputter cavity.
30. reactant gases sputtering apparatus as claimed in claim 26 is characterized in that, this magnetron cathode sputtering apparatus further is provided with a target.
31. reactant gases sputtering apparatus as claimed in claim 30 is characterized in that, this target is the magnesium plate.
32. reactant gases sputtering apparatus as claimed in claim 26 is characterized in that, the gas of this supplementary anode gas ion source is oxygen.
33. a reactant gases sputtering apparatus, it includes:
One reaction sputter cavity;
A plurality of rollers, it is located at the bottom of this reaction sputter cavity;
One magnetron cathode sputtering apparatus, it is located in this reaction sputter cavity;
At least one supplementary anode gas ion source, it is located in this reaction sputter cavity; And
A plurality of cathode oxidation plates, it is located at the inwall place of this reaction sputter cavity.
34. reactant gases sputtering apparatus as claimed in claim 33 is characterized in that, this magnetron cathode sputtering apparatus further is provided with a target.
35. reactant gases sputtering apparatus as claimed in claim 33 is characterized in that, this target is the magnesium plate.
36. reactant gases sputtering apparatus as claimed in claim 33 is characterized in that, this cathode oxidation plate is storehouse and not contact each other.
37. reactant gases sputtering apparatus as claimed in claim 33 is characterized in that, further has a plurality of insulation support bodies, this insulation support body is located between the inwall of this cathode oxidation plate and this reaction sputter cavity.
38. reactant gases sputtering apparatus as claimed in claim 33 is characterized in that, the gas of this supplementary anode gas ion source is oxygen.
39. reactant gases sputtering apparatus as claimed in claim 33 is characterized in that, further has at least one anodic gas ion source, it is located in this reaction sputter cavity.
40. reactant gases sputtering apparatus as claimed in claim 39 is characterized in that, this anodic gas ion source can replace with this supplementary anode gas ion source, and perhaps this supplementary anode gas ion source can replace with this anodic gas ion source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101153912A CN103374701A (en) | 2012-04-18 | 2012-04-18 | Reaction gas sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101153912A CN103374701A (en) | 2012-04-18 | 2012-04-18 | Reaction gas sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103374701A true CN103374701A (en) | 2013-10-30 |
Family
ID=49460527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101153912A Pending CN103374701A (en) | 2012-04-18 | 2012-04-18 | Reaction gas sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103374701A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0410627A1 (en) * | 1989-07-27 | 1991-01-30 | Kabushiki Kaisha Toshiba | Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium |
| EP0655515A1 (en) * | 1988-02-08 | 1995-05-31 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
| CN1192483A (en) * | 1997-01-14 | 1998-09-09 | 住友重机械工业株式会社 | Film growth method and film growth apparatus capable of forming magnesium oxide film with increased film growth speed |
| US20010015319A1 (en) * | 1999-02-09 | 2001-08-23 | Choe Yong Sahm | Process for producing thin film gas sensors with dual ion beam sputtering |
| TWM264281U (en) * | 2004-09-07 | 2005-05-11 | Feng-Shan Deng | A type of sputtering coater with rotary device |
| TW201042066A (en) * | 2009-05-27 | 2010-12-01 | Hon Hai Prec Ind Co Ltd | Sputter-coating apparatus |
-
2012
- 2012-04-18 CN CN2012101153912A patent/CN103374701A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0655515A1 (en) * | 1988-02-08 | 1995-05-31 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
| EP0410627A1 (en) * | 1989-07-27 | 1991-01-30 | Kabushiki Kaisha Toshiba | Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium |
| CN1192483A (en) * | 1997-01-14 | 1998-09-09 | 住友重机械工业株式会社 | Film growth method and film growth apparatus capable of forming magnesium oxide film with increased film growth speed |
| US20010015319A1 (en) * | 1999-02-09 | 2001-08-23 | Choe Yong Sahm | Process for producing thin film gas sensors with dual ion beam sputtering |
| TWM264281U (en) * | 2004-09-07 | 2005-05-11 | Feng-Shan Deng | A type of sputtering coater with rotary device |
| TW201042066A (en) * | 2009-05-27 | 2010-12-01 | Hon Hai Prec Ind Co Ltd | Sputter-coating apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101641765B (en) | Transition type deposition system and deposition method and device | |
| US4620913A (en) | Electric arc vapor deposition method and apparatus | |
| KR20100094474A (en) | Method and apparatus for sputtering deposition using direct current | |
| TW200947471A (en) | Method and apparatus for deposition of transparent conductive film | |
| Corbella et al. | Revising secondary electron yields of ion-sputtered metal oxides | |
| Osorio-Vargas et al. | Antimicrobial Cu-functionalized surfaces prepared by bipolar asymmetric DC-pulsed magnetron sputtering (DCP) | |
| WO2011152481A1 (en) | Sputter film forming device | |
| CN103374701A (en) | Reaction gas sputtering device | |
| JP6189406B2 (en) | Integrated anode and activated reactive gas source for use in magnetron sputtering devices | |
| JP2009114497A (en) | Film forming apparatus | |
| Chikada et al. | Basic study on self-healing of Er2O3 coating for vanadium–lithium blanket system | |
| JP2008240110A (en) | Film deposition method of mixed film of metal and titanium oxide and film deposition apparatus of the mixed film | |
| JP2012138228A (en) | Transparent conductive thin film and method for manufacturing the same | |
| JP2004332030A (en) | Method of producing transparent electroconductive film | |
| RU2620845C1 (en) | Device for synthesis and coating deposition | |
| JP4999602B2 (en) | Deposition equipment | |
| CN104718598A (en) | Plasma source | |
| JP2013147711A (en) | Vapor deposition apparatus | |
| JP2011256457A (en) | Sputtering method, sputter target, sputtering device and method for manufacturing target | |
| KR20130087244A (en) | Physical vapor deposition plating apparatus of guide roll and plating method | |
| KR20140074687A (en) | sputtering apparatus | |
| CN104120388B (en) | The method of nanocrystalline forming method and manufacture organic light-emitting display device | |
| CN103276357B (en) | Production technology capable of improving copper surface work function | |
| US9502222B2 (en) | Integrated anode and activated reactive gas source for use in magnetron sputtering device | |
| JP6337369B2 (en) | Method for producing low oligomeric polyester film, low oligomeric polyester film and release film using the low oligomeric polyester film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131030 |