CN103368448B - Self-driven acoustic wave transducer - Google Patents
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- CN103368448B CN103368448B CN201310016145.6A CN201310016145A CN103368448B CN 103368448 B CN103368448 B CN 103368448B CN 201310016145 A CN201310016145 A CN 201310016145A CN 103368448 B CN103368448 B CN 103368448B
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Abstract
The invention discloses a self-driven acoustic wave transducer, which is constructed by utilizing the frictional electricity property of a material and using a high-elasticity fastener. When acoustic wave is transferred to a first thin film layer of the transducer, the thin film layer makes corresponding mechanical vibration and outputs an electric signal through periodic contact with and separation from a second thin film layer. The electric signal is related to the frequency and the intensity of the acoustic wave, so that the acoustic wave transducer also has the function of a microphone. According to the acoustic wave transducer, the conversion from sound to the electric signal can be realized without supplying power through a power supply or charging previously; the acoustic wave transducer is a self-driven transducer; the self-driven acoustic wave transducer has extremely high sensitivity by using a high-elasticity thin film or a fine wire type fastener; and meanwhile, small, exquisite and concise structural design is adopted, so that the self-driven acoustic wave transducer is light and portable integrally and convenient to use, and has broad application prospect in production and life.
Description
Technical field
The present invention relates to a kind of acoustic wave transducer, particularly a kind of Self-driven acoustic wave transducer based on triboelectricity.
Background technology
Acoustic wave transducer is a kind of sound-electric conversion equipment, and major function collects voice signal and be converted into the signal of telecommunication to use for analysis or transmission, and one of them the most typical application is microphone.From the update of microphone, the development in acoustic wave transducer field just can be understood.At present, the microphone being seen in report has three kinds of different working mechanisms: be dynamic microphones, Electret Condencer Microphone and electret condenser microphone respectively.Wherein, the essential structure of dynamic microphones comprises coil, vibrating membrane and permanent magnet three part, and when sound wave enters microphone, vibrating membrane is subject to the pressure of sound wave and vibrates, thus coil is moved in magnetic field, and then produces induced current.The sensitivity of this microphone is very low, and height frequency response is very poor, and containing coil and magnet, not light.The working mechanism of Electret Condencer Microphone is the change producing electricity by the distance change between electric capacity two panels dividing plate.But such microphone needs additional power supply to work.Electret condenser microphone employs the electret material can possessing permanent charge, does not thus need to power to capacitor.But general electret microphone element internal has electronic circuit to amplify signal, therefore, still need with low voltage power supply.
Visible, existing three kinds of acoustic wave transducer devices all respectively have deficiency in the process used: low with the transducer sensitivity of moving-coil type mechanism work, height frequency difference in response, volume are large, condenser type and electret transducer, under the condition not having external power source, cannot work.
Summary of the invention
In order to overcome the defect of above-mentioned prior art, the object of the present invention is to provide a kind of structure simple, light and handy, portable, without the need to the sound wave transducer of external power source.
The invention provides a kind of acoustic wave transducer, it is characterized in that comprising elastomeric element, insulated substrate harmony electrical switching device, wherein said acoustic-electric conversion equipment comprise successively from top to bottom the first electrode layer, the first film layer, with the first film interlayer every the second thin layer placed and the second electrode lay, described first electrode layer is connected with external circuit by wire with described the second electrode lay, and described elastomeric element and described insulated substrate are used for fixed sound electrical switching device; Described elastomeric element is under the effect of sound wave, can vibrate, thus drive moving back and forth of coupled described first electrode layer and described the first film layer generating period, make being contacting and separating of described the first film layer and described second thin layer generating period, produce the signal of telecommunication and export;
Preferably, described elastomeric element is elastic film or elastic yarn;
Preferably, described elastic film and elastic yarn are made up of elastic material;
Preferably, described elastomeric element is made up of rubber or polyurethane material;
Preferably, described rubber is selected from natural rubber, butadiene-styrene rubber, butadiene rubber, isoprene rubber or ethylene-propylene rubber, and described polyurethane material is polyurethane fiber and/or polyurethane elastomer;
Preferably, the thickness of described elastic film is 10 μm-800 μm;
Preferably, the thickness of described elastic film is 40 μm-500 μm;
Preferably, the thickness of described elastic film is 80 μm-200 μm;
Preferably, described elastic yarn is made up of polyester fiber.
Preferably, described the first film layer and the second thin layer are made up of the high molecular polymer with differentiated friction electrical characteristics,
orin described the first film layer and the second thin layer, only one is made up of high molecular polymer;
Preferably, described the first film layer or the second thin layer are made up of metal material;
Preferably, described high molecular polymer is selected from polyimides, polyvinyl chloride, polytetrafluoroethylene, dimethyl silicone polymer, polypropylene, polyethylene, polystyrene, polyvinylidene chloride, CPPG, polymethyl methacrylate, polyvinyl alcohol, polyester, polyisobutene, elastic polyurethane sponge, PETG, polyvinyl butyral resin, polychlorobutadiene, natural rubber, polyacrylonitrile and poly-biphenol carbonic ester;
Preferably, described metal material is selected from gold, copper, silver, palladium and platinum;
Preferably, described the first film aspect has nanostructure to the surface of the second thin layer and/or the second thin layer towards the surface of the first film layer;
Preferably, described nanostructure comprises nano wire, nano particle, nanometer rods, nanotube or nano flower;
Preferably, described nanostructure comprises the nano-array be made up of nano wire, nanotube or nanometer rods;
Preferably, the thickness of described the first film layer and/or the second thin layer is 100nm-1mm;
Preferably, the thickness of described the first film layer and/or the second thin layer is 1 μm-800 μm;
Preferably, the thickness of described the first film layer and/or the second thin layer is 10 μm-600 μm;
Preferably, described first electrode layer and/or described the second electrode lay are made up of conductive film;
Preferably, described conductive film is selected from metallic film or indium and tin oxide film;
Preferably, the thickness of described first electrode layer and/or described the second electrode lay is 10nm-1 μm;
Preferably, the thickness of described first electrode layer and/or described the second electrode lay is 20nm-800nm;
Preferably, the thickness of described first electrode layer and/or described the second electrode lay is 50nm-500nm;
Preferably, described acoustic wave transducer also comprises shell, and described first electrode layer and described the first film layer are fixed in described shell by described elastomeric element.
The present invention also comprises a kind of preparation method of above-mentioned acoustic wave transducer, comprise the steps: prepare the first electrode layer at the upper surface of described the first film layer and wire is connected with the first electrode layer, again described first electrode layer and described elastomeric element are connected and fixed, then the second electrode lay upper surface being attached with described second thin layer is placed on described insulated substrate, described the first film layer and described second thin layer relative spacing are placed, finally described first electrode layer and described the second electrode lay are wired on external circuit, adjust the spacing of described the first film layer and described second thin layer, make described transducer being contacting and separating of described the first film layer and described second thin layer generating period under the effect of sound wave.
Preferably, described first electrode layer and/or the second electrode lay are attached to the surface of described the first film layer and described second thin film layer respectively by the method depositing or sputter.
Compared with prior art, acoustic wave transducer of the present invention has following advantages:
1, self-driven property.Self-driven acoustic wave transducer provided by the present invention, utilize the energy drives diaphragm generation mechanical oscillation of sound wave itself and export the signal of telecommunication relevant to frequency of sound wave and intensity, thus voice signal is changed into electrical signal, achieve the self-driven property of the transfer process of sound wave-signal of telecommunication.
2, high sensitivity.Self-driven acoustic wave transducer provided by the present invention breach the elastic properties of materials with triboelectric characteristics less, cannot sensitive detection low-frequency vibration application restriction, utilize the characteristic of elastomeric material dexterously, make small acoustic vibration also can cause the output of the signal of telecommunication, there is higher sensitivity.
3, structure is simple, light and handy, portable.What Self-driven acoustic wave transducer provided by the present invention adopted is the film with nanostructure, and does not have additional power source, so overall structure is small and exquisite, simple, can be widely used in the various fields such as transaudient, sound-detection, sound wave can store.
Accompanying drawing explanation
Shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawing indicates identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on demonstrating purport of the present invention.
Fig. 1 is a kind of typical acoustic wave transducer structural representation of the present invention;
Fig. 2 is the operation principle schematic diagram of acoustic wave transducer of the present invention;
Fig. 3 is a kind of typical acoustic wave transducer structural representation with surface nano-structure of the present invention;
Fig. 4 is the typical acoustic wave transducer structural representation of a kind of designs simplification of the present invention;
Fig. 5 is a kind of typical acoustic wave transducer structural representation adopting elastic yarn of the present invention;
Fig. 6 is the schematic top plan view of acoustic wave transducer shown in Fig. 5.
101-first electrode layer, 102-the first film layer, 103-second thin layer, 104-the second electrode lay, 105-insulated substrate, 106-elastic film layer, 107-the first film layer surface nano-structure, 108-shell, 109-wire, 110-voltmeter, 111-elastic yarn.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
" friction electrode sequence " described in the present invention, refer to the sequence carried out according to the attraction degree of material to electric charge, the moment that bi-material is contacting with each other, negative electrical charge is transferred to from the material surface of friction electrode sequence Semi-polarity calibration the material surface that friction electrode sequence Semi-polarity comparatively bears on the contact surface.Up to now, also do not have the mechanism of the explanation Charger transfer that a kind of unified theory can be complete, it is generally acknowledged, this Charger transfer is relevant with the surface work function of material, realizes Charger transfer by the transfer on the contact surface of electronics or ion.It should be noted that, friction electrode sequence is a kind of statistics based on experience, namely bi-material differs far away in the sequence, the probability that the positive negativity that after contact, institute produces electric charge and this sequence are consistent is larger, and the result of reality is subject to the impact of many factors, such as material surface roughness, ambient humidity and whether have Relative friction etc.Needing to further illustrate is that the transfer of electric charge does not need the Relative friction between bi-material, contacts with each other as long as exist.
" contact electric charge " described in the present invention, refer to the material that there are differences two kinds of friction electrode sequence polarity contact and is separated afterwards its surperficial with electric charge, it is generally acknowledged, this electric charge is only distributed in the surface of material, and distribution depth capacity is only about 10 nanometers.It should be noted that, the symbol of contact electric charge is the symbol of net charge, namely may there is the aggregation zone of negative electrical charge in the some areas with the material surface just contacting electric charge, but the symbol of whole net surface charge is just.
Fig. 1 is the typical acoustic wave transducer structural representation of one provided by the invention.Acoustic wave transducer shown in this embodiment comprises the acoustic-electric conversion equipment of shell 108, elastic film layer 106, insulated substrate 105 and inside, wherein acoustic-electric conversion equipment comprises the first electrode layer 101, the first film layer 102, and the second thin layer 103 of placing of the first film layer 102 interval and the second electrode lay 104 from top to bottom successively, first electrode layer 101 is connected with voltmeter 110 by wire 109 with the second electrode lay 104, and the edge of elastic film layer 106 and the edge of insulated substrate 105 are all fixed on the inwall of shell 108; Elastic film layer 106 is under the effect of sound wave, can vibrate, thus drive is attached to the first electrode layer 101 of its lower surface and moving back and forth up and down of the first film layer 102 generating period, make being contacting and separating of the first film layer 102 and the second thin layer 103 generating period, produce the signal of telecommunication and export.
The first film layer 102 and the second thin layer 103 are made up of the material with differentiated friction electrical characteristics respectively, described differentiated friction electrical characteristics mean that the two is in different positions in friction electrode sequence, thus make can produce contact electric charge on surface the two moment in contact.Conventional high molecular polymer all has triboelectric characteristics, all can as the material preparing the first film layer 102 of the present invention and the second thin layer 103, enumerate the macromolecule polymer material that some are conventional herein, and arrange according to the order obtaining electronic capability enhancing: polymethyl methacrylate, polyvinyl alcohol, polyester, polyisobutene, elastic polyurethane sponge, PETG, polyvinyl butyral resin, polychlorobutadiene, natural rubber, polyacrylonitrile, poly-biphenol carbonic ester, CPPG, polyvinylidene chloride, polystyrene, polyethylene, polypropylene, polyimides, polyvinyl chloride, dimethyl silicone polymer, polytetrafluoroethylene.Reason as space is limited; can not carry out exhaustive to all possible material; only list several concrete polymeric material herein from people's reference; but obviously these concrete materials can not become the restrictive factor of scope; because under the enlightenment of invention, those skilled in the art is easy to the material selecting other similar according to the triboelectric characteristics that these materials have.
Metal has the triboelectric characteristics easily losing electronics, in the list of friction electrode sequence, be often positioned at end place.Therefore, metal also can as the raw material preparing the first film layer 102 or the second thin layer 103.Conventional metal comprises aluminium, gold, copper, silver, palladium, platinum etc.Certainly, other materials with conductive characteristic can also be used to serve as the thin layer easily losing electronics, such as indium tin oxide ITO.When thin layer is by preparation of metals, itself just has conductive capability, and the electrode layer therefore contacted with it can omit, with simplified structure.If certainly need electrode layer to use different materials, the structure so adopting thin film layer as shown in Figure 1 to add one deck electrode layer is also completely passable.
Found through experiments, when the first film layer 102 and the second thin layer 103 material electronic capability difference larger (namely far away in the difference of the position in electrode sequence that rubs) time, the signal of telecommunication of acoustic wave transducer output is stronger.So, can according to actual needs, select suitable material to prepare the first film layer 102 and the second thin layer 103, to obtain better output effect.
The thickness of the first film layer 102 and the second thin layer 103 gets over Bao Yuehao in machinable scope, can within the scope of 100nm-1mm, preferably 1 μm-800 μm, more preferably 10 μm-600 μm.Length and width can be selected according to actual needs, do not have a significant effect to the performance of acoustic wave transducer.
If the Material selec-tion high molecular polymer of thin layer, by method preparations such as spin coatings, if select metal material, can be prepared by the method for magnetron sputtering.
As long as the first electrode layer 101 and the second electrode lay 104 possess the characteristic that can conduct electricity, metallic film or indium and tin oxide film can be selected from, more preferably metallic film, such as aluminium film, golden film, copper film; Electrode layer should with corresponding thin layer close contact, and to ensure the efficiency of transmission of electric charge, good mode electric conducting material is passed through the surface filming of mode at respective films layer of deposition; Concrete deposition process can be magnetron sputtering or evaporation.In order to ensure the sensitivity of acoustic wave transducer, the thickness of the first electrode layer 101 and the second electrode lay 104 gets over Bao Yuehao, is generally 10nm-1 μm, is preferably 20nm-800nm, is more preferably 50nm-500nm, especially 80nm-200nm.
There is no the precedent utilizing the triboelectric characteristics of material to make acoustic wave transducer at present, reason is the elasticity of the material generally with triboelectric characteristics is not fine, cannot restore to the original state after there is deformation under the effect of external force.In order to ensure that the first film layer 102 can to come in contact with the second thin layer 103 and to be separated under the effect of external periodic force, and maintain suitable spacing between, general way installs rigid substrate additional respectively on the first electrode layer 101 with below the second electrode lay 104, electrode layer and thin layer are supported, multiple elastic space holder is set between two substrates simultaneously, such as spring, effect like this by spring can make the first film layer and the second thin layer contact with each other when there being external force to apply, and can be separated after external force is cancelled and keep suitable spacing.But this structure needs the effective output being ensured the signal of telecommunication by multiple spring, complex structure, the vibration of the induction sound wave that the rigid substrate of use can not be sensitive, therefore effectively cannot be converted into the signal of telecommunication by sound wave at all.
In order to break through this restriction, present inventor has performed a large amount of experiments, final discovery can effectively be addressed this problem by the use of elastic film layer 106.Elastic film layer 106 is by elastomeric material, particularly elastic material is formed, there is very high elasticity, deformation can be there is and can resilience rapidly under the effect of external force, thus drive moving back and forth up and down of the first electrode layer 101 attached to it and the first film layer 102 generating period, the first film layer 102 and the second thin layer 103 are formed periodically be contacting and separating, produce the corresponding signal of telecommunication and export; And the structure of film makes it can both respond small vibration, thus there is the sensitivity of height.Acoustic wave transducer of the present invention solves the restriction that triboelectricity device cannot be used for acoustic sounding, greatly extends the range of application of triboelectricity device, and smart structural design, is easy to preparation, is beneficial to very much large-scale production.
Elastic film layer 106 can be made with the insulating material that elasticity is higher, comprise rubber and polyurethanes elastic material, such as: natural rubber, butadiene-styrene rubber, butadiene rubber, isoprene rubber, ethylene-propylene rubber, polyurethane fiber and/or polyurethane elastomer, by the film technique of routine, such as technology for compressing and forming, be prepared into the film of thickness about 10 μm-800 μm, preferred thickness is 40 μm-500 μm, more preferably 80 μm-200 μm.
Elastic film layer 106 can be connected with outer casing inner wall 108 by conventional mode, such as, on inwall 108, arrange securing member, or is connected by the mode of bonding.Certainly, those skilled in the art can predict, if this acoustic wave transducer is combined with other devices, without the need to stand-alone shell, so elastic film layer 106 can be connected and fixed be combined device by conventional mode completely, and therefore shell 108 is not the necessary parts of acoustic wave transducer of the present invention.
The effect of insulated substrate 105 is fixed the second electrode lay 104 and supports, and therefore do not have particular/special requirement to material, as long as insulation easily shaping and install.Do not require that insulated substrate 105 must be rigid, but because acoustic vibration can drive the first film layer 102 to the second thin layer 103 near and contact, in order to keep the stable output of the signal of telecommunication, insulated substrate 105 preferably can support the second electrode lay 104 and the second thin layer 103, make the first film layer 102 to the second thin layer 103 near with in the process contacted, the second thin layer 103 can keep stablizing motionless.
To the shape of insulated substrate 105, thickness and and the way of contact of the second electrode lay 104 be all not particularly limited, as long as the above-mentioned requirement of the present invention can be met.And the fixed form of insulated substrate 105 also can adopt the mode of this area routine, such as, in chlamydate situation, be fixed on outer casing inner wall by support, securing member etc.When being combined with other devices, be fixed in be combined device according to actual requirement.
In the present embodiment, the first electrode layer 101 and the second electrode lay 104 are wired on voltmeter 110, the voltage signal produced during to be determined at acoustical vibration, but people can select suitable detection means according to actual needs in actual applications, are not limited to use voltmeter.
Composition graphs 2 is set forth acoustic wave transducer operation principle of the present invention.In Fig. 2, the first film layer 102 and the second thin layer 103 are 2 kinds of materials that there is friction electrode sequence difference, under the initial condition not having external force, due to the existence of elastic film layer 106, between the first film layer 102 and the second thin layer 103, there is certain interval (see step A in Fig. 2).When there being External Force Acting, the first film layer 102 and the second thin layer 103 contact with each other, so there is surface charge transfer in the moment of contact, form layer of surface contact electric charge (see step B in Fig. 2).Because the first film layer 102 is different with the position of material in friction electrode sequence of the second thin layer 103, second thin layer 103 surface produces negative electrical charge, and the first film layer 102 surface produces positive charge, the electricity size of two kinds of electric charges is identical, therefore between the first electrode layer 101 and the second electrode lay 104, do not have electrical potential difference, just there is no flow of charge yet.When external force is withdrawn gradually, under the effect of elastic film layer 106, the first film layer 102 starts to be separated with the second thin layer 103, the entirety be now made up of the first electrode layer 101 and the first film layer 102 has clean surplus positive charge, and the entirety that the second electrode lay 104 and the second thin layer 103 are formed has clean surplus negative electrical charge, therefore between the first electrode layer 101 and the second electrode lay 104, create electrical potential difference.For balancing this electrical potential difference, electronics flows into the first electrode layer 101 by external wire by the second electrode lay 104, thus produce by the transient current (see Fig. 2 in step C) of the first electrode layer to the second electrode lay at external circuit, when the first film layer 102 gets back to initial position, spacing between it and the second thin layer 103 reaches maximum, the electric charge of the two all reaches balance, between the first electrode layer 101 and the second electrode lay 104, there is no electrical potential difference, just do not have electric current to produce (in see Fig. 2 D step) at external circuit yet.When periodic external force applies once again, due to the pitch smaller of the first electrode layer 101 and the second thin layer 103, the negative electrical charge on the second thin layer 103 surface strengthens the repulsive interaction of negative electrical charge in the first electrode layer 101, the positive charge on the first film layer 102 surface also strengthens the sucking action of negative electrical charge in the second electrode lay 104 simultaneously, causes the electrical potential difference between the first electrode layer 101 and the second electrode lay 104 to reduce thus.For balancing this electrical potential difference further, electronics flows into the second electrode lay 104 by external circuit by the first electrode layer 101, thus produces the transient current (see Fig. 2 in step e) contrary with first time direction at external circuit.After external force continuation applying makes the first film layer 102 and the second thin layer 103 come in contact, just repeat again the situation of B-E step above.As can be seen here, when sound wave effect is in elastic film layer 106, elastic film layer 106 can be impelled to drive the first film layer 102 that reciprocal mechanical oscillation occur, and being constantly contacting and separating by the first film layer 102 and the second thin layer 103, form the signal of telecommunication and constantly export.And sound intensity of wave and frequency can affect intensity and frequency that the first film layer 102 vibrates, and the Vibration Condition of the first film layer 102 directly affects the contact condition of itself and the second thin layer 103, and then affects the output of the signal of telecommunication.Therefore, acoustic wave transducer of the present invention can not only convert sound wave to the signal of telecommunication, and the signal of telecommunication that can also be different with rate-adaptive pacemaker according to sound intensity of wave, has possessed the function of microphone.
Fig. 3 is a kind of typical acoustic wave transducer with surface nano-structure of the present invention.The primary structure of the present embodiment is identical with the embodiment shown in Fig. 1, is only described the difference of the two herein.Embodiment shown in Fig. 3 have employed the first film layer 102 that surface has nanostructure 107, and described nanostructure can be nano particle, nano wire, nanometer rods, nano flower and the nano-array that is made up of nano wire and/or nanometer rods.This nanostructure 107 makes the surface of the first film layer 102 more coarse on microcosmic, when this thin layer is when coming in contact with the second thin layer 103, can form more obvious friction effect, and produce and more contact electric charge, the signal of telecommunication of output is stronger.
Described nanostructure 107 can select the conventional method in this area to be prepared, such as: template transfer method: liquid material is poured into the template that has micro/nano structure, then material is dried post-tensioning from template, namely can obtain the friction electric material that surface has micro/nano structure.
Those skilled in the art can expect, also similar effect can be produced in the surface structure nanostructure of the second thin layer 103, construct nanostructure on the surface of the first film layer 102 and the second thin layer 103, the performance of acoustic-electric conversion can be better even simultaneously simultaneously.Therefore, these situations also belong within protection scope of the present invention.
Fig. 4 is the typical acoustic wave transducer of another kind of designs simplification of the present invention, and the primary structure of the present embodiment is identical with the embodiment shown in Fig. 3, is only described the difference of the two herein.The second electrode lay and the second thin layer unite two into one by the embodiment shown in Fig. 4, and the second thin layer 103 prepared with conductive material replaces.This design make use of the conductivity of metallic film cleverly and in friction, easily loses the characteristic of electronics, effectively simplifies the structure, is more conducive to industrialized production and application.
Second thin layer 103 can be prepared by the method for sputtering or chemical deposition.
Fig. 5 is a kind of typical acoustic wave transducer adopting elastic yarn of the present invention, and the primary structure of the present embodiment is identical with the embodiment shown in Fig. 1, is only described the difference of the two herein.Embodiment shown in Fig. 5 uses elastic yarn 111 to replace elastic film layer 106 to be fixed on outer casing inner wall 108 by first electrode layer 101.Fig. 6 is the vertical view of the present embodiment, can find out that employing 3 elastic yarns in the present embodiment fixes.Certain those skilled in the art can increase or reduce quantity and its distribution mode of elastic yarn 111 according to actual needs; these change be all on basis of the present invention by the experiment of logical reasoning and limited number of time and confirmable, be therefore all within protection scope of the present invention.
Elastic yarn can select better, the durable material of elasticity to prepare, and such as polyurethane fiber can obtain required filament by the mode of spinning.
Below by way of a specific embodiment, the preparation method of acoustic wave transducer of the present invention is described: adopt vapour deposition method evenly to plate one deck gold Au film at the upper surface of polyimide film, after cooling, one end of a wire is fixed by welding in the outside of golden Au film, realizes the connection of golden Au thin layer and wire; Bond a synthetic rubber film at this golden Au film surface, thus polyimide film and Au film are attached to the lower surface of synthetic rubber film.Using polyethylene terephthalate thin film as betatopic thin layer, plate Al metal membrane at its back side by the method for magnetron sputtering, one end of a wire is fixed by welding in the outside of metal A l film, realize the connection of wire and Al metal membrane; Be placed on insulated substrate by the lower surface of Al film by bonding, this insulated substrate is fixed in container by the strutting piece of shell of tank inwall and screw.Then, the synthetic rubber film being attached with polyimide film and Au film is fixed in container by the removable clip securing member of outer casing inner wall, the wire be connected outside Al metal membrane and Au film is linked on external circuit.Finally be placed near acoustic wave source by this acoustic wave transducer, external circuit shows the signal of telecommunication and exports, and the spacing of adjustment polyimide film lower surface and polyethylene terephthalate thin film upper surface, makes the signal of telecommunication of output meet the demands.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (27)
1. an acoustic wave transducer, it is characterized in that comprising elastomeric element, insulated substrate harmony electrical switching device, wherein said acoustic-electric conversion equipment comprise successively from top to bottom the first electrode layer, the first film layer, with the first film interlayer every the second thin layer placed and the second electrode lay, described first electrode layer is connected with external circuit by wire with described the second electrode lay, and described elastomeric element and described insulated substrate are used for fixed sound electrical switching device; Described elastomeric element is under the effect of sound wave, can vibrate, thus drive moving back and forth of coupled described first electrode layer and described the first film layer generating period, make being contacting and separating of described the first film layer and described second thin layer generating period, the generation signal of telecommunication exports, and the constituent material of wherein said the first film layer and described second thin layer has different triboelectric characteristics.
2. acoustic wave transducer as claimed in claim 1, is characterized in that described elastomeric element is elastic film or elastic yarn.
3. acoustic wave transducer as claimed in claim 2, is characterized in that described elastic film and elastic yarn are made up of elastic material.
4. the acoustic wave transducer as described in any one of claim 1-3, is characterized in that described elastomeric element is made up of rubber or polyurethane material.
5. acoustic wave transducer as claimed in claim 4, it is characterized in that described rubber is selected from natural rubber, butadiene-styrene rubber, butadiene rubber, isoprene rubber or ethylene-propylene rubber, described polyurethane material is polyurethane fiber and/or polyurethane elastomer.
6. acoustic wave transducer as claimed in claim 2 or claim 3, is characterized in that the thickness of described elastic film is 10 μm-800 μm.
7. acoustic wave transducer as claimed in claim 6, is characterized in that the thickness of described elastic film is 40 μm-500 μm.
8. acoustic wave transducer as claimed in claim 7, is characterized in that the thickness of described elastic film is 80 μm-200 μm.
9. acoustic wave transducer as claimed in claim 3, is characterized in that described elastic yarn is made up of polyester fiber.
10. as claim 1-3,5 and 7-9 according to any one of acoustic wave transducer, it is characterized in that described the first film layer and the second thin layer are made up of the high molecular polymer with differentiated friction electrical characteristics, or in described the first film layer and the second thin layer only one be made up of high molecular polymer.
11. as claim 1-3,5 and 7-9 according to any one of acoustic wave transducer, it is characterized in that described the first film layer or the second thin layer are made up of metal material.
12. acoustic wave transducers as claimed in claim 10, is characterized in that described high molecular polymer is selected from polyimides, polyvinyl chloride, polytetrafluoroethylene, dimethyl silicone polymer, polypropylene, polyethylene, polystyrene, polyvinylidene chloride, CPPG, polymethyl methacrylate, polyvinyl alcohol, polyisobutene, elastic polyurethane sponge, PETG, polyvinyl butyral resin, polychlorobutadiene, natural rubber, polyacrylonitrile and poly-biphenol carbonic ester.
13. acoustic wave transducers as claimed in claim 11, is characterized in that described metal material is selected from gold, copper, silver, palladium and platinum.
14. as claim 1-3,5, acoustic wave transducer according to any one of 7-9 and 12-13, it is characterized in that described the first film aspect has nanostructure to the surface of the second thin layer and/or the second thin layer towards the surface of the first film layer.
15. acoustic wave transducers as claimed in claim 14, is characterized in that described nanostructure comprises nano wire, nano particle, nanometer rods, nanotube or nano flower.
16. acoustic wave transducers as claimed in claim 14, is characterized in that described nanostructure comprises the nano-array be made up of nano wire, nanotube or nanometer rods.
17. as claim 1-3,5, acoustic wave transducer according to any one of 7-9,12-13 and 15-16, it is characterized in that the thickness of described the first film layer and/or the second thin layer is 100nm-1mm.
18. acoustic wave transducers as claimed in claim 17, is characterized in that the thickness of described the first film layer and/or the second thin layer is 1 μm-800 μm.
19. acoustic wave transducers as claimed in claim 17, is characterized in that the thickness of described the first film layer and/or the second thin layer is 10 μm-600 μm.
20. as claim 1-3,5, acoustic wave transducer according to any one of 7-9,12-13,15-16 and 18-19, it is characterized in that described first electrode layer and/or described the second electrode lay are made up of conductive film.
21. acoustic wave transducers as claimed in claim 20, is characterized in that described conductive film is selected from metallic film or indium and tin oxide film.
22. as claim 1-3,5, acoustic wave transducer according to any one of 7-9,12-13,15-16,18-19 and 21, it is characterized in that the thickness of described first electrode layer and/or described the second electrode lay is 10nm-1 μm.
23. acoustic wave transducers as claimed in claim 22, is characterized in that the thickness of described first electrode layer and/or described the second electrode lay is 20nm-800nm.
24. acoustic wave transducers as claimed in claim 23, is characterized in that the thickness of described first electrode layer and/or described the second electrode lay is 50nm-500nm.
25. as claim 1-3,5,7-9,12-13,15-16,18-19,21 and 23-24 according to any one of acoustic wave transducer, characterized by further comprising shell, and described first electrode layer and described the first film layer are fixed in described shell by described elastomeric element.
26. 1 kinds of claim 1-3, 5, 7-9, 12-13, 15-16, 18-19, 21 and the preparation method of acoustic wave transducer according to any one of 23-24, it is characterized in that comprising the steps: prepare the first electrode layer at the upper surface of described the first film layer and wire is connected with the first electrode layer, again described first electrode layer and described elastomeric element are fixedly connected, then the second electrode lay upper surface being attached with described second thin layer is placed on described insulated substrate, described the first film layer and described second thin layer relative spacing are placed, finally described first electrode layer and described the second electrode lay are wired on external circuit, adjust the spacing of described the first film layer and described second thin layer, make described transducer being contacting and separating of described the first film layer and described second thin layer generating period under the effect of sound wave.
27. preparation methods as claimed in claim 26, is characterized in that described first electrode layer and/or the second electrode lay are attached to the surface of described the first film layer and described second thin film layer respectively by the method depositing or sputter.
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| CN104748769B (en) * | 2013-12-25 | 2017-08-04 | 北京纳米能源与***研究所 | A kind of sensor and method for sensing based on electrostatic induction |
| CN104836473B (en) * | 2014-02-07 | 2018-11-02 | 北京纳米能源与***研究所 | Acquire the generator and sound transducer of acoustic energy |
| CN104836472B (en) * | 2014-02-07 | 2017-11-03 | 北京纳米能源与***研究所 | Utilize the generator and sound transducer of acoustic energy |
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| CN105333943A (en) * | 2014-08-14 | 2016-02-17 | 北京纳米能源与***研究所 | Sound sensor and sound detection method by using sound sensor |
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| CN105991064B (en) * | 2016-05-06 | 2018-04-20 | 纳智源科技（唐山）有限责任公司 | Touch sensor and tactile sensing device of robot's sensory perceptual system based on friction generator |
| CN106368917B (en) * | 2016-11-14 | 2019-05-17 | 中国科学院理化技术研究所 | A kind of friction nanometer generating system driven by thermoacoustic engine |
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| CN107086811A (en) * | 2017-05-18 | 2017-08-22 | 中国科学院理化技术研究所 | The friction nanometer generating device and method of driving is flowed when a kind of |
| CN110164693B (en) * | 2018-02-12 | 2022-02-11 | 北京纳米能源与***研究所 | Electret electrode, preparation method thereof and electret device |
| CN109889009B (en) * | 2019-03-21 | 2021-08-10 | 中山大学 | Electromagnetism-friction combined type generator based on magnetism needle-like structure |
| CN113394941B (en) * | 2021-06-16 | 2022-11-11 | 西北工业大学 | Electromagnetism-piezoelectricity hybrid double-effect quasi-zero-stiffness vibration energy harvesting device |
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