CN103368059A - Graphene-based reflective type saturable absorber and preparation method - Google Patents
Graphene-based reflective type saturable absorber and preparation method Download PDFInfo
- Publication number
- CN103368059A CN103368059A CN2013103125165A CN201310312516A CN103368059A CN 103368059 A CN103368059 A CN 103368059A CN 2013103125165 A CN2013103125165 A CN 2013103125165A CN 201310312516 A CN201310312516 A CN 201310312516A CN 103368059 A CN103368059 A CN 103368059A
- Authority
- CN
- China
- Prior art keywords
- graphene
- saturable absorber
- reflectance coating
- reflection
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
The invention discloses a graphene-based brand-new reflective type saturable absorber and a preparation method. The obtained saturable absorber comprises a saturable absorption layer, a reflective film layer and a substrate layer. The preparation method comprises the steps as follows: plating a gold film on a graphene thin film growing on a copper foil, reversing the gold film to face downward, binding with a silicon substrate the upper surface of which is plated with the gold film, contacting a smooth optical fiber end surface and graphene smoothly, and fixing and packaging the optical fiber and the absorber together. As the saturable absorber, the graphene has the advantages of being low in saturation strength, ultrafast in recovery time, adjustable in modulation depth, unrelated with wavelength, low in cost and the like, and by combining the specific structure advantage of the reflective type saturable absorber, the novel saturable absorber which is practical, simple and high-efficiency, stable in working property, high in optical damage and convenient for large-scale production can be realized.
Description
Technical field
The present invention relates to the laser optics device, relate in particular to a kind of reflection-type saturable absorber and preparation method.
Background technology
Ultrashort pulse has important application in fields such as optical fiber communication, ultrafast optics, Fibre Optical Sensor, industrial processes, optical information processing, laser guidance, medical treatment, inertial confinement fast ignitions, causes in recent years people's broad research.Saturable absorber is that laser with active-passive lock mould is used for one of common method that realizes ultrashort pulse.Saturable absorber is realized the fundamental mechanism of locked mode: when this absorber was passed through in light pulse, the loss of its limit alar part was greater than the loss of middle body, and its intensity is enough to make absorber saturated, and as a result light pulse is narrowed in passing through the process of absorber.
Present saturable absorber mainly contains: dyestuff, colour centre crystal, semiconductor saturable absorbing mirror (SESAM), and Single Walled Carbon Nanotube (SWCNT) etc., but separately defective is arranged separately.Dyestuff and colour centre crystal are usually used in the solid state laser, are difficult to use in optical fiber mode locked laser.Semiconductor saturable absorbing mirror is to obtain at Bragg mirror growth layer of semiconductor saturated absorbing body.Although this saturable absorber is at present the most frequently used, but the growth conditions of its operation wavelength, modulation depth, saturation intensity and semi-conducting material and material, thickness etc. have relation, complex manufacturing technology, operating wavelength range is narrow, and modulation depth is difficult to adjust.Single Walled Carbon Nanotube absorbs optical wavelength and is determined by caliber and chirality, comprises metal type pipe and semi-conductor type pipe, and is difficult for disperseing, and is unfavorable for preparing saturable absorber.
The discovery of Graphene in 2004, for people have brought the new material as saturable absorber, not only have absorption intensity low, supper-fast recovery time, modulation depth is adjustable, and because distinctive zero band gap characteristics, saturated absorption characteristic and Wavelength-independent, these good characteristics have remedied the deficiency of above-mentioned several saturable absorber materials.
Yet, now existing saturable absorption body structure based on Graphene mainly contain be attached to fiber end face, be attached to the side cut open polishing fine, be attached to tapered fiber cone district three kinds.
Find by literature search Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers, Q.Bao, H.Zhang, Y.Wang, Z.Ni, Y.Yan, Z.X.Shen, K.P.Loh, and D.Y.Tang, Adv.Funct.Mater.19,3077 (2009) .(single-layer graphenes are realized ultrashort pulse as saturable absorber, Q.Bao, H.Zhang, Y.Wang, Z.Ni, Y.Yan, Z.X.Shen, K.P.Loh, and D.Y.Tang, the advanced function material, the 19th volume, 19 phases, the 3077th page, 2009) literary composition introduced first single-layer graphene has been attached to fiber end face is realized communication band 756fs as saturable absorber mode locking pulse.Graphene mode-lockers for fiber lasers functioned with evanescentfield interaction, Y.W.Song, S.Y.Jang, W.S.Han, and M.K.Bae, Appl.Phys.Lett.96,051122 (2010) (mode-locked laser of Graphene and evanescent field effect, Y.W.Song, S.Y.Jang, W.S.Han, and M.K.Bae, the Applied Physics wall bulletin, the 96th volume, the 5th phase, Chapter 11, the 22nd piece, 2010) literary composition introduced a kind of graphene suspension and has been spin-coated on the side and cuts open in the polishing fibre and realize locked mode as the laser with active-passive lock mould saturable absorber.Evanescent-Light Deposition of Graphene Onto Tapered Fibers for Passive Q-Switch and Mode-Locker, J.Wang, Z.Luo, M.Zhou, C.Ye, H.Fu, Z.Cai, H.Cheng, H.Xu, and W.Qi, IEEE Photon.J.4 (5), (tapered fiber evanescent field light deposition Graphene is used for passive Q-switch and locked mode, J.Wang, Z.Luo to 1295 – 1305 (2012), M.Zhou, C.Ye, H.Fu, Z.Cai, H.Cheng, H.Xu, and W.Qi, photonic propulsion magazine, the 5th phase of the 4th volume, the 1295-1305 page or leaf, 2012) introduced and utilized Graphene polymer drop that Graphene is attached to tapered fiber cone district as saturable absorber, and realized locked mode.
But these three kinds shortcomings that also all have separately: be attached to the fiber end face type, graphene film is often removed the PMMA(polymethyl methacrylate) difficulty, the existence of PMMA has just limited the intensity of light field, because high distribution of light intensity easily damages and is attached with the PMMA graphene film, in addition, this structure have also that easy breakage, graphene film easily come off and can not large-scale production etc. significant shortcoming.Be attached to the side cut open polishing fine be difficult to equally remove PMMA, can affect the saturable absorption of its Graphene.The Graphene that is attached to tapered fiber cone district is attached to the cone district confusedly, and lack of homogeneity can strengthen scattering of light, and power easily causes energy accumulating a bit to burn out optical fiber at certain when larger.
Therefore, those skilled in the art is devoted to develop a kind of PMMA and Graphene saturable absorber simple in structure, stable performance of not containing.
Summary of the invention
Because the defects of prior art, technical problem to be solved by this invention provides a kind of PMMA and Graphene saturable absorber simple in structure, stable performance of not containing.
For achieving the above object, the invention provides a kind of reflection-type saturable absorber based on Graphene, concrete technical scheme is:
Reflection-type saturable absorber based on Graphene comprises saturable absorption layer, reflective coating, basalis;
Described saturable absorption layer, described reflective coating, described basalis three laminating integrators, described reflective coating is between described saturable absorption layer and described basalis.
Preferably, described saturable absorption layer is a kind of among Graphene, graphene oxide or the functionalized Graphene.The saturable absorption layer is based on the topmost part of reflection-type saturable absorber of Graphene, and laser beam is narrowed in passing through the process of saturable absorption layer.
Preferably, described reflective coating is a kind of among golden film, silverskin, copper film or the aluminium film, also can adopt other light to be had the material of highly reflective.Gold film, silverskin, copper film, aluminium film or other to the effect that light has the material of highly reflective are, make the laser reflection of incident on it, make laser again by Graphene, have strengthened the saturable absorption effect of Graphene to laser.
Preferably, described basalis is a kind of among silicon or the silicon dioxide, can adopt also that other forms are fixed, the bulk material of stable chemical nature, plays the effect of carrying reflective coating and saturable absorption layer.
The present invention also provides the preparation method based on the reflection-type saturable absorber of Graphene, it is characterized in that, comprises the steps:
(1) growing graphene on Copper Foil;
(2) at described Graphene plated surface the first reflectance coating, obtain plating the Graphene of the first reflectance coating;
(3) plate the second reflectance coating at upper surface of substrate, obtain plating the substrate of the second reflectance coating;
(4) will be described in the step (2) Graphene of plating the first reflectance coating be inverted, make described the first reflectance coating down and combine with suprabasil described second reflectance coating of the second reflectance coating of plating described in the step (3);
(5) described Copper Foil is eroded, expose described Graphene.
Preferably, described the first reflectance coating is identical with described the second reflective film material, is selected from a kind of among golden film, silverskin, copper film, the aluminium film.
Preferably, described substrate is selected from a kind of among silicon or the silicon dioxide.
Preferably, plate described the first reflectance coating and described the second reflectance coating with evaporation coating method.Evaporated device is simple, technical maturity, can obtain uniform reflective coating.
Preferably, the above first reflectance coating of described Graphene is combined with optical cement or ultraviolet glue with the above second reflectance coating of described substrate, and the first reflectance coating and the second reflectance coating are closely fit together, and becomes reflective coating.
Preferably, utilize ferric chloride solution to etch away described Copper Foil, Graphene is revealed fully.
In better embodiment of the present invention, select golden film as reflectance coating, silicon has made the reflection-type saturable absorber based on Graphene as substrate.
In another better embodiment of the present invention, select silverskin as reflectance coating, silicon dioxide has made the reflection-type saturable absorber based on Graphene as substrate.
Compared with prior art, the invention has the beneficial effects as follows:
(1) based on reflection type structure, can be applicable to the linear cavity mode-locked laser;
(2) do not have the problem of removing PMMA, Graphene can keep complete chemical constitution;
(3) do not contain the impurity light injury thresholds such as PMMA high;
(4) single-layer graphene uniform fold, stable performance, simple efficient;
(5) mode by plated film with Graphene stable be adsorbed on the reflectance coating difficult drop-off;
(6) be convenient to large-scale production.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand fully purpose of the present invention, feature and effect.
Description of drawings
Fig. 1 is the schematic diagram of the reflection-type saturable absorber of a preferred embodiment of the present invention;
Fig. 2 is the preparation flow figure of the reflection-type saturable absorber of a preferred embodiment of the present invention.
Embodiment
Embodiment one
Below in conjunction with detailed reflection-type saturable absorber and the preparation method who introduces based on Graphene of Fig. 2.Comprise among Fig. 2: the contact-making surface 7 of Copper Foil 1, Graphene 2, the first gold medal film 3, silicon base 4, the second gold medal film 5, optical fiber 6, optical fiber and Graphene.
Reflection-type saturable absorption preparation based on Graphene may further comprise the steps:
Adopt chemical vapor deposition (CVD) method growing graphene 2 on Copper Foil 1.At first Copper Foil 1 is put into quartz ampoule, temperature rises to 800～1100 ℃, pass into afterwards the hydrogen annealing 5～30 minutes of 10～200sccm, then pass into one or both gases in methane, the acetylene, gas flow 10～300sccm, Graphene 2 growths were closed carbon-source gas fast cooling under atmosphere of hydrogen after 5～60 minutes.At the first gold medal film 3 about thickness 200nm on the Graphene 2 upper surface evaporations that growth is finished.Be that millimetre-sized silicon base 4 plates the second gold medal film 5 close with the first gold medal film 3 thickness at thickness.Make Copper Foil 1 up, the first gold medal film 3 is placed down, and the first gold medal film 3 and the second gold medal film 5 are bonded together by the method for optical cement, makes the first gold medal film 3 and the second gold medal film 5 become integral body, i.e. so-called reflective coating.Utilize the ferric chloride solution of 0.5mol/L to erode Copper Foil 1, and in deionized water rinsing Graphene 2 outer surfaces, remove as far as possible impurity.Reflection-type saturable absorber preparation based on Graphene is finished.
The silicon base shape is fixed, stable chemical performance, can carry well and fix golden film; The gold film has very strong albedo to optical fiber, and laser beam sees through Graphene and is mapped on the golden film, and golden film sees through Graphene after laser beam is reflected again; Graphene has played the effect of twice saturated absorption, and laser beam is further narrowed.
The reflection-type saturable absorber based on Graphene with the preparation of this kind method is compared with common saturable absorber, has the following advantages: do not contain the impurity such as PMMA; Mode by plated film with Graphene stable be adsorbed on difficult drop-off on the reflectance coating, graphene uniform covers, stable performance; Be provided with dexterously reflective coating, to reflection of light, strengthened the effect of Graphene saturable absorption by reflectance coating.
The end face of drawing the optical fiber 6 of tail optical fiber polishes flat, and evenness is in the nm magnitude, and with the flat end face and Graphene 2 face-to-face smooth contacts of optical fiber 6, clearance control below 1um, the coupling efficiency when increasing golden film reverberation as far as possible and entering fibre.At last the position of tail optical fiber and saturable absorber is fixed, and be packaged together.The saturable absorber of the present embodiment preparation can be applicable to the linear cavity mode-locked laser based on reflection type structure.
Embodiment two
Adopt chemical vapor deposition (CVD) method growing graphene on Copper Foil.At first Copper Foil is put into quartz ampoule, temperature rises to 800～1100 ℃, pass into afterwards the hydrogen annealing 5～30 minutes of 10～200sccm, then pass into one or both gases in methane, the acetylene, gas flow 10～300sccm, the Graphene growth was closed carbon-source gas fast cooling under atmosphere of hydrogen after 5～60 minutes.Plate the first silverskin about thickness 200nm at the Graphene upper surface that growth is finished.Be that millimetre-sized silicon dioxide substrate plates second silverskin close with the first silver film thickness at thickness.Make Copper Foil up, the first silverskin is placed down, and the first silverskin and the second silverskin are bonded together by the method for ultraviolet glue, makes the first silverskin and the second silverskin become integral body, i.e. so-called reflective coating.Utilize the ferric chloride solution of 0.5mol/L to erode Copper Foil, and in deionized water rinsing Graphene outer surface, remove as far as possible impurity.Reflection-type saturable absorber preparation based on Graphene is finished.
More than describe preferred embodiment of the present invention in detail.The ordinary skill that should be appreciated that this area need not creative work and just can design according to the present invention make many modifications and variations.Therefore, all in the art technical staff all should be in the determined protection range by claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (10)
1. based on the reflection-type saturable absorber of Graphene, it is characterized in that,
Comprise saturable absorption layer, reflective coating, basalis;
Described saturable absorption layer, described reflective coating, described basalis three laminating integrators, described reflective coating is between described saturable absorption layer and described basalis.
2. the reflection-type saturable absorber based on Graphene as claimed in claim 1 is characterized in that, described saturable absorption layer is a kind of among Graphene, graphene oxide or the functionalized Graphene.
3. the reflection-type saturable absorber based on Graphene as claimed in claim 1 is characterized in that, described reflective coating is a kind of among golden film, silverskin, copper film or the aluminium film.
4. the reflection-type saturable absorber based on Graphene as claimed in claim 1 is characterized in that, described basalis is a kind of among silicon or the silicon dioxide.
5. based on the preparation method of the reflection-type saturable absorber of Graphene, it is characterized in that, comprise the steps:
(1) growing graphene on Copper Foil;
(2) at described Graphene plated surface the first reflectance coating, obtain plating the Graphene of the first reflectance coating;
(3) plate the second reflectance coating at upper surface of substrate, obtain plating the substrate of the second reflectance coating;
(4) will be described in the step (2) Graphene of plating the first reflectance coating be inverted, make described the first reflectance coating down and combine with suprabasil described second reflectance coating of the second reflectance coating of plating described in the step (3);
(5) described Copper Foil is eroded, expose described Graphene.
6. the preparation method of the reflection-type saturable absorber based on Graphene as claimed in claim 5 is characterized in that, described the first reflectance coating is identical with described the second reflective film material, is selected from a kind of among golden film, silverskin, copper film, the aluminium film.
7. the preparation method of the reflection-type saturable absorber based on Graphene as claimed in claim 5 is characterized in that, described substrate is selected from a kind of among silicon or the silicon dioxide.
8. the preparation method of the reflection-type saturable absorber based on Graphene as claimed in claim 5 is characterized in that, plates described the first reflectance coating and described the second reflectance coating with evaporation coating method.
9. the preparation method of the reflection-type saturable absorber based on Graphene as claimed in claim 5 is characterized in that, the above first reflectance coating of described Graphene is combined with optical cement or ultraviolet glue with the above second reflectance coating of described substrate.
10. the preparation method of the reflection-type saturable absorber based on Graphene as claimed in claim 5 is characterized in that, utilizes ferric chloride solution to etch away described Copper Foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310312516.5A CN103368059B (en) | 2013-07-23 | 2013-07-23 | Based on reflection-type saturable absorber and the preparation method of Graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310312516.5A CN103368059B (en) | 2013-07-23 | 2013-07-23 | Based on reflection-type saturable absorber and the preparation method of Graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103368059A true CN103368059A (en) | 2013-10-23 |
| CN103368059B CN103368059B (en) | 2016-04-06 |
Family
ID=49368862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310312516.5A Expired - Fee Related CN103368059B (en) | 2013-07-23 | 2013-07-23 | Based on reflection-type saturable absorber and the preparation method of Graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103368059B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904544A (en) * | 2013-11-15 | 2014-07-02 | 南通蓝诺光电科技有限公司 | Two-dimensional stratified material saturable absorber device and manufacturing method thereof |
| CN105337153A (en) * | 2015-11-27 | 2016-02-17 | 中国科学院西安光学精密机械研究所 | Method for manufacturing saturable absorber device based on evanescent wave mode locking |
| CN106226970A (en) * | 2016-08-09 | 2016-12-14 | 深圳大学 | A kind of full photo threshold device based on two-dimensional material wavelength convert function and its preparation method and application |
| CN110911958A (en) * | 2019-11-25 | 2020-03-24 | 上海交通大学 | Silicon-based passive mode-locked external cavity laser based on two-dimensional material saturable absorber |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| US20120247545A1 (en) * | 2011-03-29 | 2012-10-04 | California Institute Of Technology | Graphene-based multi-junctions flexible solar cell |
-
2013
- 2013-07-23 CN CN201310312516.5A patent/CN103368059B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120247545A1 (en) * | 2011-03-29 | 2012-10-04 | California Institute Of Technology | Graphene-based multi-junctions flexible solar cell |
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904544A (en) * | 2013-11-15 | 2014-07-02 | 南通蓝诺光电科技有限公司 | Two-dimensional stratified material saturable absorber device and manufacturing method thereof |
| CN105337153A (en) * | 2015-11-27 | 2016-02-17 | 中国科学院西安光学精密机械研究所 | Method for manufacturing saturable absorber device based on evanescent wave mode locking |
| CN106226970A (en) * | 2016-08-09 | 2016-12-14 | 深圳大学 | A kind of full photo threshold device based on two-dimensional material wavelength convert function and its preparation method and application |
| CN106226970B (en) * | 2016-08-09 | 2019-04-16 | 深圳大学 | A kind of full photo threshold device and its preparation method and application based on two-dimensional material wavelength convert function |
| CN110911958A (en) * | 2019-11-25 | 2020-03-24 | 上海交通大学 | Silicon-based passive mode-locked external cavity laser based on two-dimensional material saturable absorber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103368059B (en) | 2016-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jiang et al. | Broadband nonlinear photonics in few‐layer MXene Ti3C2Tx (T= F, O, or OH) | |
| Liu et al. | CVD-grown MoSe2 with high modulation depth for ultrafast mode-locked erbium-doped fiber laser | |
| Chen et al. | Preparation of carbon nanoparticles with strong optical limiting properties by laser ablation in water | |
| Zheng et al. | Laser trimming of graphene oxide for functional photonic applications | |
| Wang et al. | Advances of Nonlinear Photonics in Low‐Dimensional Halide Perovskites | |
| Tian et al. | Ultrafast saturable absorption in TiS 2 induced by non-equilibrium electrons and the generation of a femtosecond mode-locked laser | |
| Lu et al. | Charge transfer in graphene/WS2 enhancing the saturable absorption in mixed heterostructure films | |
| Li et al. | Switching the nonlinear optical absorption of titanium carbide MXene by modulation of the surface terminations | |
| Fu et al. | Resonantly enhanced optical nonlinearity in hybrid semiconductor quantum dot–metal nanoparticle structures | |
| CN103368059B (en) | Based on reflection-type saturable absorber and the preparation method of Graphene | |
| Liu et al. | Nonlinear optical properties of anisotropic two-dimensional layered materials for ultrafast photonics | |
| Wang et al. | Saturable absorption in graphene-on-waveguide devices | |
| CN103368058B (en) | A kind of saturable absorbing mirror based on Graphene and manufacture method | |
| Li et al. | Q-switched all-fiber laser with short pulse duration based on tungsten diselenide | |
| Yang et al. | Excimer laser deposited CuO and Cu 2 O films with third-order optical nonlinearities by femtosecond z-scan measurement | |
| Liu et al. | Passively Q-switched dual-wavelength Yb: LSO laser based on tungsten disulphide saturable absorber | |
| Zhang et al. | Atomic-layer molybdenum sulfide passively modulated green laser pulses | |
| Konov | Carbon photonics | |
| Zhang et al. | Fiber-based all-optical modulation based on two-dimensional materials | |
| Yu et al. | Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain | |
| Adnan et al. | Real-time dynamic evolution monitoring of laser-induced exciton phase flips in 2D hybrid semiconductor (C12H25NH3) 2PbI4 | |
| Lin et al. | Bilayer structure of ZnO nanorod/nanodiamond film based ultraviolet photodetectors | |
| Li et al. | Fully Discrete VO2 Particulate Film with Ultra‐High Transmittance and Excellent Thermochromic Performance | |
| CN104242053A (en) | Implementation and enhancement method for ZnO single-mode ultraviolet lasers | |
| Bodiou et al. | Guided photoluminescence from integrated carbon-nanotube-based optical waveguides |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160406 Termination date: 20210723 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |