CN103367190A - Method for detecting integrating degree of photoresist and silicon nitride thin films by applying vacuum environments - Google Patents
Method for detecting integrating degree of photoresist and silicon nitride thin films by applying vacuum environments Download PDFInfo
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- CN103367190A CN103367190A CN2013102647488A CN201310264748A CN103367190A CN 103367190 A CN103367190 A CN 103367190A CN 2013102647488 A CN2013102647488 A CN 2013102647488A CN 201310264748 A CN201310264748 A CN 201310264748A CN 103367190 A CN103367190 A CN 103367190A
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Abstract
The invention provides a method for detecting the integrating degree of a photoresist and silicon nitride thin films by applying vacuum environments, which comprises the following steps of taping out wafers onto silicon chips to form silicon nitride thin films; respectively placing a plurality of wafers of which the surface are provided with the silicon nitride thin films in a plurality of vacuum environments with different vacuum degrees for preset time; respectively dividing atmospheric pressures of the different vacuum degrees by the standard atmospheric pressure so as to obtain a plurality of different ratios serving as vacuum degree coefficients of the different vacuum degrees; aiming at the wafers, adopting a photoresist raw material which needs to be detected to carry out a photoetching process, checking defects of photoresist development after photoetching, and identifying non-defect wafers and defected wafers in the wafers; and determining the integrating degree between the photoresist and the silicon nitride thin films into the range of more than or equal to the maximum vacuum degree coefficient in the vacuum environments where the non-defect wafers are positioned and less than the minimum vacuum degree coefficient in the vacuum environments where the defected wafers are positioned.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method that vacuum environment detects photoresistance and silicon nitride film compatible degree of using.
Background technology
Along with the development of integrated circuit technology, relevant semiconductor manufactured materials kind is more and more, makes the most frequently used photoresistance (PR, photo resist) in the photoetching process such as semiconductor.Simultaneously, photoetching process has very important status in the semiconductor manufacturing, and this is because the most figure of device is all leading by photoetching.
Simultaneously, it also is to contact the most closely that photoetching process and thin-film technique have the most direct usually, and photoresistance directly directly contacts with silicon oxide film or silicon nitride (SIN) film usually.
Different photoresistance types often has different compatible degrees from silicon nitride film.If photoresistance and silicon nitride film are lower than certain compatible degree, tend to produce potential baneful influence in various degree, be depicted as the not enough underdevelop defective of photoresistance that produces of compatible degree between certain photoresistance and the silicon nitride film such as Fig. 1 and Fig. 2 (representing respectively photoresistance residual defects and the SIN residual defects that is caused by the photoresistance residual defects).If can not in time find and get rid of this kind impact in the semiconductor device development stage, when large-scale production, will produce serious loss.
But only rest on rear critical size and the defective etc. of checking of exposure for the method that detects the compatible degree between photoresistance and the silicon nitride film, this method can not detect the problem that just can occur usually when the generations such as large-scale production or online production processing procedure are offset.
Therefore, hope can provide the method for the compatible degree between a kind of more effective detection photoresistance and the silicon nitride film.
Summary of the invention
Technical problem to be solved by this invention is for having defects in the prior art, the method for the compatible degree between a kind of more effective detection photoresistance and the silicon nitride film being provided.
According to a first aspect of the invention, provide a kind of method that vacuum environment detects photoresistance and silicon nitride film compatible degree of using, it comprises:
First step: the step that the wafer flow has extremely been formed silicon nitride film at silicon chip;
Second step: the surface is formed with the vacuum environment scheduled time that a plurality of wafers of silicon nitride film place respectively a plurality of different vacuum degrees.
Third step: standard atmospheric pressure respectively divided by the air pressure of described a plurality of different vacuum degrees, is obtained a plurality of different ratios as the tenuity factor of described a plurality of different vacuum degrees;
The 4th step: for described a plurality of wafers, adopting needs the photoresistance raw material of detection to carry out photoetching process, and checks the underdevelop defective of photoresistance after photoetching, identifies not have defective zero defect wafer and defective defective wafer in described a plurality of wafer;
The 5th step: the compatible degree between photoresistance and the silicon nitride film is defined as: more than or equal to the tenuity factor of the maximum in the residing vacuum environment of zero defect wafer, and less than the tenuity factor of the minimum in the residing vacuum environment of defective wafer.
Preferably, described first step forms step with wafer flow to blocking layer of metal silicide.
Preferably, the described scheduled time is between one hour to two hours.
Preferably, the described scheduled time is one hour.
Preferably, the described scheduled time is two hours.
According to a second aspect of the invention, provide a kind of photoetching method that has adopted above-mentioned application vacuum environment to detect the method for photoresistance and silicon nitride film compatible degree.
The present invention is advantageously with the standard of tenuity factor as the compatible degree between photoresistance and the silicon nitride film, by silicon nitride film being placed the standard time as the necessary condition of measuring compatible degree in specific vacuum degree environment; And the situation of photoresistance residual defects determines that the compatible degree of photoresistance and silicon nitride film provides the method for the compatible degree between a kind of more effective detection photoresistance and the silicon nitride film thus after the detection photoetching process.
Description of drawings
By reference to the accompanying drawings, and by with reference to following detailed description, will more easily to the present invention more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Fig. 1 and Fig. 2 schematically show the underdevelop defective of photoresistance.
Fig. 3 schematically shows and uses according to the preferred embodiment of the invention the flow chart that vacuum environment detects the method for photoresistance and silicon nitride film compatible degree.
Need to prove that accompanying drawing is used for explanation the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure may not be to draw in proportion.And in the accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings content of the present invention is described in detail.
Know-why of the present invention is, because silicon nitride film contains NH
3Micel, and be NH with the low principal element that causes photoresistance to be poisoned of photoresistance compatible degree
3Chemical composition in micel and the photoresistance reacts, and causes the photoetching process removal of can not developing fully.Silicon nitride film after vacuum environment is processed, the enrichment of N H that the surface will be in various degree
3Micel, enrichment degree increases with the enhancing of vacuum degree.Utilize this characteristic to introduce the method for the compatible degree of following detection photoresistance and silicon nitride film.
Fig. 3 schematically shows and uses according to the preferred embodiment of the invention the flow chart that vacuum environment detects the method for photoresistance and silicon nitride film compatible degree.
Specifically, as shown in Figure 3, the method for using according to the preferred embodiment of the invention vacuum environment detection photoresistance and silicon nitride film compatible degree comprises:
First step S1: the wafer flow to the step (that is, having formed silicon nitride film at silicon chip) that needs to detect, is formed step such as blocking layer of metal silicide.
Second step S2: the surface is formed with the vacuum environment scheduled time that a plurality of wafers of silicon nitride film place respectively a plurality of different vacuum degrees.
For example, can get and be the scheduled time of standard in one hour, certainly can select At All Other Times section as the scheduled time, for example two hours; Preferably, the scheduled time is between one hour to two hours.
Third step S3: standard atmospheric pressure respectively divided by the air pressure of described a plurality of different vacuum degrees, is obtained a plurality of different ratios as the tenuity factor of described a plurality of different vacuum degrees.That is:
Tenuity factor=standard pressure/vacuum degree air pressure
The 4th step S4: for described a plurality of wafers, adopt the photoresistance raw material that need to detect to carry out photoetching process according to conventional operation, and after photoetching, check the underdevelop defective of photoresistance, and identify and do not have defective zero defect wafer and defective defective wafer in described a plurality of wafer;
The 5th step S5: the compatible degree between photoresistance and the silicon nitride film is defined as: more than or equal to the tenuity factor of the maximum in the residing vacuum environment of zero defect wafer, and less than the tenuity factor of the minimum in the residing vacuum environment of defective wafer.
That is to say, when silicon nitride film has in a certain specific tenuity factor environment scheduled time of placement and when not having the photoresistance residual defects, judging that then the compatible degree of photoresistance and silicon nitride film is more than or equal to described specific tenuity factor ring.When silicon nitride film has in a certain specific tenuity factor environment scheduled time of placement and when the photoresistance residual defects is arranged, judging that then the compatible degree of photoresistance and silicon nitride film is less than described specific tenuity factor ring.
This shows, can obtain the numerical approximation of photoresistance and silicon nitride film by described method.
More particularly, for instance, for a plurality of tenuity factor K1 that increase successively, K2, K3 ... Kn, if defective does not appear in the wafer under tenuity factor K1, the K2 after above-mentioned processing, and tenuity factor K3 ... wafer under the Kn defective occurs after above-mentioned processing, then the compatible degree of photoresistance and silicon nitride film more than or equal to K2 less than K3.And the compatible degree numerical value of photoresistance and silicon nitride film is higher, illustrates that then two kinds of materials are subjected to the influences of fluctuations such as external environment less.
When practical semiconductor is produced, the compatible degree that can adopting said method detects different photoresistance raw material and silicon nitride film, select photoresist in conjunction with the tenuity factor that may run in the production process (taking pictures such as electron microscope), the compatible degree of selected photoresist and specific silicon nitride film is greater than the tenuity factor of online common vacuum environment, this will reduce greatly by the low impact that manufacturing process is caused of two kinds of compatible degrees, make with Yield lmproved for semiconductor is online to provide safeguard.
The present invention is advantageously with the standard of tenuity factor as the compatible degree between photoresistance and the silicon nitride film, by silicon nitride film being placed the standard time as the necessary condition of measuring compatible degree in specific vacuum degree environment; And the situation of photoresistance residual defects determines that the compatible degree of photoresistance and silicon nitride film provides the method for the compatible degree between a kind of more effective detection photoresistance and the silicon nitride film thus after the detection photoetching process.
According to another preferred embodiment of the invention, the present invention also provides a kind of photoetching method that has adopted above-mentioned application vacuum environment to detect the method for photoresistance and silicon nitride film compatible degree.
Be understandable that although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not to limit the present invention.For any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (6)
1. use the method that vacuum environment detects photoresistance and silicon nitride film compatible degree for one kind, it is characterized in that comprising:
First step: the step that the wafer flow has extremely been formed silicon nitride film at silicon chip;
Second step: the surface is formed with the vacuum environment scheduled time that a plurality of wafers of silicon nitride film place respectively a plurality of different vacuum degrees;
Third step: standard atmospheric pressure respectively divided by the air pressure of described a plurality of different vacuum degrees, is obtained a plurality of different ratios as the tenuity factor of described a plurality of different vacuum degrees;
The 4th step: for described a plurality of wafers, adopting needs the photoresistance raw material of detection to carry out photoetching process, and checks the underdevelop defective of photoresistance after photoetching, identifies not have defective zero defect wafer and defective defective wafer in described a plurality of wafer;
The 5th step: the compatible degree between photoresistance and the silicon nitride film is defined as: more than or equal to the tenuity factor of the maximum in the residing vacuum environment of zero defect wafer, and less than the tenuity factor of the minimum in the residing vacuum environment of defective wafer.
2. application vacuum environment according to claim 1 detects the method for photoresistance and silicon nitride film compatible degree, it is characterized in that described first step forms step with wafer flow to blocking layer of metal silicide.
3. application vacuum environment according to claim 1 and 2 detects the method for photoresistance and silicon nitride film compatible degree, it is characterized in that the described scheduled time is between one hour to two hours.
4. application vacuum environment according to claim 1 and 2 detects the method for photoresistance and silicon nitride film compatible degree, it is characterized in that the described scheduled time is one hour.
5. application vacuum environment according to claim 1 and 2 detects the method for photoresistance and silicon nitride film compatible degree, it is characterized in that the described scheduled time is two hours.
6. a photoetching method is characterized in that adopting application vacuum environment according to claim 1 and 2 to detect the method for photoresistance and silicon nitride film compatible degree.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221981A (en) * | 1997-12-30 | 1999-07-07 | 国际商业机器公司 | Method and sysetm for semiconductor waper fabrication process real-time in-situ supervision |
| CN1455439A (en) * | 2002-01-24 | 2003-11-12 | 株式会社日立制作所 | Mask making method and method for making semiconductor integrated circuit device |
| US20040052973A1 (en) * | 2002-09-10 | 2004-03-18 | Doo-Whan Choi | Method for removing photoresist |
| CN101273443A (en) * | 2005-09-26 | 2008-09-24 | 应用材料公司 | Hydrogen treatment to improve photoresist adhesion and rework consistency |
| KR101170759B1 (en) * | 2010-05-11 | 2012-08-03 | 세메스 주식회사 | Method for treating substrate |
-
2013
- 2013-06-27 CN CN201310264748.8A patent/CN103367190B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221981A (en) * | 1997-12-30 | 1999-07-07 | 国际商业机器公司 | Method and sysetm for semiconductor waper fabrication process real-time in-situ supervision |
| CN1455439A (en) * | 2002-01-24 | 2003-11-12 | 株式会社日立制作所 | Mask making method and method for making semiconductor integrated circuit device |
| US20040052973A1 (en) * | 2002-09-10 | 2004-03-18 | Doo-Whan Choi | Method for removing photoresist |
| CN101273443A (en) * | 2005-09-26 | 2008-09-24 | 应用材料公司 | Hydrogen treatment to improve photoresist adhesion and rework consistency |
| KR101170759B1 (en) * | 2010-05-11 | 2012-08-03 | 세메스 주식회사 | Method for treating substrate |
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