CN103367149B - Ldmos晶体管的场氧化层隔离结构及制备方法 - Google Patents
Ldmos晶体管的场氧化层隔离结构及制备方法 Download PDFInfo
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CN108511346B (zh) * | 2018-03-05 | 2021-01-22 | 上海华虹宏力半导体制造有限公司 | Ldmos器件的制造方法 |
CN114551224B (zh) * | 2022-04-28 | 2022-08-02 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
CN116525660B (zh) * | 2023-07-03 | 2023-09-12 | 北京智芯微电子科技有限公司 | 纵向栅氧结构的ldmosfet器件及制造方法 |
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CN101702409A (zh) * | 2009-11-09 | 2010-05-05 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型双扩散金属氧化物半导体管 |
US8067293B2 (en) * | 2008-12-12 | 2011-11-29 | Dongbu Hitek Co., Ltd. | Power semiconductor device and method of manufacturing the same |
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US8067293B2 (en) * | 2008-12-12 | 2011-11-29 | Dongbu Hitek Co., Ltd. | Power semiconductor device and method of manufacturing the same |
CN101702409A (zh) * | 2009-11-09 | 2010-05-05 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型双扩散金属氧化物半导体管 |
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