CN103361721A - Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace - Google Patents
Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace Download PDFInfo
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- CN103361721A CN103361721A CN2013102958434A CN201310295843A CN103361721A CN 103361721 A CN103361721 A CN 103361721A CN 2013102958434 A CN2013102958434 A CN 2013102958434A CN 201310295843 A CN201310295843 A CN 201310295843A CN 103361721 A CN103361721 A CN 103361721A
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Abstract
The invention relates to a melting height control method of an ingot casting crystal seed. The melting height control method comprises the following steps of: controlling a heat field, and gradually melting the crystal seed laid in a crucible and polycrystalline silicon raw material above the crystal seed; utilizing a thermocouple to obtain a temperature sudden change signal on the side wall of the crucible; and judging the melting height of the crystal seed according to the obtained signal, and controlling the heat field to jump from a melting stage to a crystal growth stage when the crystal seed is melted to the set height. In the melting height control method of the ingot casting crystal seed, the temperature sudden change signal on the side wall of the crucible is detected through the thermocouple, and the melting height of a silicon solution can be judged, so that the heat field can be controlled to jump from the melting stage to the crystal growth stage when the crystal seed is melted to the set height, and then the remaining height of the crystal seed can be controlled; and the method has the characteristics of high precision and low cost. Additionally, the invention further provides a polycrystalline silicon ingot casting furnace which can implement the method.
Description
Technical field
The present invention relates to the photovoltaic silicon wafer production technical field, be specifically related to a kind of ingot casting crystal seed fusing height control method and polycrystalline silicon ingot or purifying furnace.
Background technology
Solar energy power generating is one of form of sustainable energy utilization, has all obtained rapidly development in each state in recent years.At present, use most often crystal silicon solar energy battery, crystal silicon solar energy battery is mainly made by pulling of crystals silicon chip (CZ) or ingot casting polysilicon chip (DSS).The pulling of silicon single crystal photoelectric transformation efficiency is higher, but production capacity is low, production cost is high; The ingot casting polysilicon chip is high with production capacity, the low dominant position that occupies solar cell of cost, but relative pulling of silicon single crystal, ingot casting polysilicon efficient is lower.
Recently in order to improve the efficient of ingot casting polysilicon chip, the industry technology personnel combine the separately advantage of above two kinds of technology, propose to have the ingot casting growing technology of crystal seed, spread the efficient polycrystalline technology of broken silicon material or broken silicon wafers such as the accurate single crystal technology of ingot casting, the crucible bottom of crucible bottom shop single crystal seed.Their common ground is: when filling with substance all is covered with crystal seed in crucible bottom, must guarantee that in the fusing later stage crystal seed is not completely melted, then directly at the crystal seed gem-quality crystal of growing, the method can with the mode of production of ingot casting, be produced the high efficiency products that efficient is similar to the CZ monocrystalline.
Because the part crystal seed is expensive, the last reservation thickness of crystal seed directly affects the final yield of crystal in addition.So the accurate control of the melting residual height of seed crystals of crystal seed directly affects the final production cost of this kind production technology.The main quartz pushrod manual measurement that adopts is controlled the seed crystal residual altitude in the industry at present, but the method needs operator ceaselessly to maintain sharp vigilance, take multiple measurements, be easy to occur larger error and personnel and forget that thereby the situation of measurement causes producing the variety of issues such as unstable, that production cost can fall, the high purity quartz rod is expensive in addition, for easily consuming product, will bring larger production cost to increase.In addition, recently also there is the veteran technician of minority to propose to judge by the slight rate of change of fusing later stage crucible bottom temperature the residual altitude of crystal seed, but the method needs professional's experience very abundant, and there is very large risk in the method.
Summary of the invention
Based on this, be necessary to provide the ingot casting crystal seed fusing that a kind of precision is high, cost is low height control method.In addition, also provide a kind of polycrystalline silicon ingot or purifying furnace that can implement aforesaid method.
A kind of ingot casting crystal seed fusing height control method may further comprise the steps: the control thermal field makes the crystal seed and the from top to bottom progressively fusing of the polycrystalline silicon raw material above the crystal seed that are laid in the crucible; Utilize thermopair to obtain temperature jump signal on the crucible wall; Judge the height of crystal seed fusing according to the signal that gets access to, be melted to the setting height time control at crystal seed and heat and enter the long brilliant stage by the fusion stage leapfrog.
Therein among embodiment, the described utilization in the step that thermopair obtains the temperature jump signal on the crucible wall, the point for measuring temperature of described thermopair is 0～60mm apart from the horizontal throw of crucible wall, is 0～150mm apart from the vertical range of crucible bottom.
Therein among embodiment, describedly be melted to before the setting height time control heats a step that is entered the long brilliant stage by the fusion stage at crystal seed, judge when crystal seed is melted to default warning height and report to the police.
Among embodiment, described default warning is provided with one highly at least therein.
Therein among embodiment, described control thermal field, the polycrystalline silicon raw material that makes the crystal seed that is laid in the crucible and crystal seed top are from top to bottom progressively before the step of fusing, and be further comprising the steps of: lay crystal seed in crucible; Above crystal seed, lay polycrystalline silicon raw material.
A kind of polycrystalline silicon ingot or purifying furnace, comprise heat-insulation cage, place the interior heat exchange platform of described heat-insulation cage, be placed on the crucible on the described heat exchange platform, described polycrystalline silicon ingot or purifying furnace also comprises the thermopair that is arranged on the crucible outside, and the point for measuring temperature of described thermopair contacts with crucible wall or the interval arranges.
Among embodiment, be furnished with successively one or more described thermopairs along described crucible short transverse therein.
Among embodiment, the point for measuring temperature of described thermopair is 0～60mm apart from the horizontal throw of crucible wall therein, is 0～150mm apart from the vertical range of crucible bottom.
Among embodiment, also be provided with the graphite backplate between described crucible and the heat-insulation cage therein, the point for measuring temperature of described thermopair is apart from the horizontal throw of the crucible wall thickness greater than described graphite backplate; Or corresponding described thermopair is provided with the galvanic couple dead slot on the described graphite backplate, and described thermopair extend in the described galvanic couple dead slot.
Among embodiment, described thermopair is fixed on the body of heater or described heat-insulation cage of described ingot furnace therein.
In the above-mentioned ingot casting crystal seed fusing height control method, by the temperature jump signal on the thermopair detection crucible wall, can judge silicon liquid fusing height, thereby can be melted to the setting height time control at crystal seed heats from the fusion stage leapfrog and enters the long brilliant stage, thereby the crystal seed melting residual height of seed crystals is controlled, and the method has precision height, characteristics that cost is low.
Above-mentioned polycrystalline silicon ingot or purifying furnace utilizes the feedback of the thermopair at crucible wall place can accurately control crystal seed fusing leapfrog height, thus the crystal seed melting residual height of seed crystals controlled, and have precision height, characteristics that cost is low.
Description of drawings
Fig. 1 is the schema of ingot casting crystal seed fusing height control method;
Fig. 2 is the structural representation of the polycrystalline silicon ingot or purifying furnace of an embodiment;
Fig. 3 is the position relationship synoptic diagram of crucible and thermopair;
Fig. 4 is the floor map of graphite backplate.
Embodiment
Please refer to Fig. 1, disclosed a kind of polycrystalline silicon ingot or purifying furnace ingot casting crystal seed melting residual height of seed crystals control method, may further comprise the steps:
S110, control thermal field make the crystal seed and the from top to bottom progressively fusing of the polycrystalline silicon raw material above the crystal seed that are laid in the crucible.
At first, in crucible, lay crystal seed, and above crystal seed, lay polycrystalline silicon raw material.Lay the certain thickness crystal seed of one deck in crucible bottom, then normally load polycrystalline silicon raw material.Crystal seed can be single crystal seed piece, specific polysilicon cycle stock, broken silicon wafers, fine particle material, silica flour material etc.Then, the thermal field of control ingot furnace enters the fusion stage, makes the from top to bottom progressively fusing of crystal seed and polycrystalline silicon raw material.
S120, utilize thermopair to obtain temperature jump signal on the crucible wall.In this step, whether occurrence temperature is suddenlyd change to utilize thermopair to detect crucible wall.Thermopair can be any one temperature-sensitive device, can be that contact thermocouple can also be contactless thermopair.Thermopair places the crucible outside, and its point for measuring temperature is 0～60mm apart from the horizontal throw of crucible wall, is 0～150mm apart from the vertical range of crucible bottom.
S130, judge the height of crystal seed fusing according to the signal that gets access to, be melted to the setting height time control at crystal seed and heat and enter the long brilliant stage by the fusion stage leapfrog.The principle of judging is: because solid silicon and liquid silicon thermal conductivity obvious difference, in silicon material melting process from top to bottom, top the temperature of melt portions silicon material apparently higher than the lower part temperature of melted silicon material not, thereby be higher than the temperature of lower characteristics in the easy formation temperature sudden change of crucible sidepiece and upper temp, the sudden change that therefore utilizes thermopair to detect crucible lateral region temperature is easy to judge whether the silicon material has been melted to this height.Therefore, when crystal seed is melted to setting height, thermopair is with the temperature jump signal feedback of the crucible wall corresponding zone industrial computer to polycrystalline silicon ingot or purifying furnace, next, can control thermal field by industrial computer and enter the long crystals growth stage by the fusion stage leapfrog, also can send warning, manually control leapfrog by operator and enter the long crystals growth stage.Like this, the residue crystal seed just no longer continues fusing, and the crystal seed residual altitude is controlled, and this mode does not need manpower to judge by rule of thumb, and the detected result precision is high, and cost is low, can realize the automatic production of crystal seed ingot casting in conjunction with automation control system.
In this step, a thermopair can only be set, direct leapfrog enters the long crystals growth stage when judging that crystal seed is melted to setting height.A plurality of thermopairs can also be set, and at first to report to the police when judging that crystal seed is melted to different default warning height, then leapfrog enters the long crystals growth stage when judging that crystal seed is melted to setting height.Report to the police and be provided with highly at least one.Warning can watchful operator, make its working condition of paying close attention in advance polycrystalline silicon ingot or purifying furnace, guarantee that the long brilliant stage carries out smoothly, can take measures to enter in advance the long brilliant stage according to practical situation such as operator.
Please refer to Fig. 2 to Fig. 4, a kind of polycrystalline silicon ingot or purifying furnace 100 that is used for implementing aforesaid method also is provided, and it comprises body of heater 110, place heat-insulation cage 120 in the body of heater 110, place heat exchange platform 130 in the heat-insulation cage 120, be placed on crucible 140 on the heat exchange platform 130, be fixed on the graphite backplate 150 between crucible 140 and the heat-insulation cage 120.Polycrystalline silicon ingot or purifying furnace 100 further comprises the first thermopair 160 and the second thermopair 170 that is arranged on crucible 140 outsides.Need point out that the quantity of thermopair also can be one, can also be more than two, and this quantity of sentencing thermopair is two and describes for example.Body of heater 110 bottoms also arrange the graphite pillar 180 of supporting hot board 130.Be provided with in the heat-insulation cage 120 and use the well heater 190 that crucible 140 is heated from top and sidepiece.
Please refer to Fig. 2 and Fig. 3, the first thermopair 160 and the second thermopair 170 pass body of heater 110, heat-insulation cage 120, graphite backplate 150 successively, and the point for measuring temperature that makes two thermopairs is near crucible 140 sidewalls, also can be directly and crucible 140 sidewall contacts.The first thermopair 160 and the second thermopair 170 are fixed on the body of heater 110, also can be fixed on the sidewall of heat-insulation cage 120.Please refer to Fig. 4, graphite backplate 150 corresponding the first thermopairs 160 and the second thermopair 170 are provided with the first galvanic couple dead slot 152 and the second galvanic couple dead slot 154.In other words, the first galvanic couple dead slot 152 is consistent respectively with the height of corresponding the first thermopair 160 and the second thermopair 170 with the second galvanic couple dead slot 154, with convenient the first thermopair 160 and the second thermopair 170 installed.
The first thermopair 160 and the second thermopair 170 tie up to crucible 140 short transverses and arrange successively, and in Fig. 2 and Fig. 3, the first thermopair 160 is positioned at the second thermopair 170 tops, to obtain the temperature jump signal at crucible 140 sidewall different heights places.When thermopair quantity was one, the height of the point for measuring temperature of thermopair was consistent with the crystal seed residual altitude that needs or a little more than the crystal seed residual altitude.When thermopair quantity was two or more, the height of the point for measuring temperature of one of them thermopair was consistent with the crystal seed residual altitude that needs or a little more than the crystal seed residual altitude; All the other thermopairs then are arranged in aforementioned hot galvanic couple top, are used for corresponding different warning height, give the alarm highly the time to be melted to this warnings at crystal seed.In Fig. 2 and Fig. 3, the signal feedback of the first thermopair 160 will be carried out 1 grade of warning to the industrial computer of polycrystalline silicon ingot or purifying furnace 100 when industrial computer is received the jump signal of the first thermopair 160, and operator learn that namely crystal seed is about to be melted to residual altitude.The signal feedback of the second thermopair 170 will be carried out 2 grades of warnings to the industrial computer of polycrystalline silicon ingot or purifying furnace 100 when industrial computer is received the jump signal of the second thermopair 170, illustrate that crystal seed has been melted to residual altitude this moment, and in good time leapfrog enters the long crystals growth stage.
The first thermopair 160 and the second thermopair 170 can be any one temperature-sensitive devices, can be that contact thermocouple can also be contactless thermopair.Preamble is chatted, and in the present embodiment, the point for measuring temperature of the first thermopair 160 and the second thermopair 170 and crucible 140 sidewall spacers settings can certainly contact.Take the first thermopair 160 as example, the horizontal throw of the first thermopair 160 and crucible 140 sidewalls is usually less than the thickness of graphite backplate 150, the point for measuring temperature of the first thermopair 160 extend in the first galvanic couple dead slot 152 and was 0～60mm apart from the horizontal throw of crucible 140 sidewalls this moment, was 0～150mm apart from the vertical range of crucible 140 bottoms.It is pointed out that the first thermopair 160 and the horizontal throw of crucible 140 sidewalls also can be greater than the thickness of graphite backplate 150, this moment, the first thermopair 160 was positioned at graphite backplate 150 outsides, so also the first galvanic couple dead slot 152 can be set on the graphite backplate 150.
Below in conjunction with an application case, illustrate how to implement aforesaid ingot casting crystal seed fusing height control method with above-mentioned polycrystalline silicon ingot or purifying furnace 100.
1) charging is laid the certain thickness crystal seed of one deck in crucible 140 bottoms, and this crystal seed height is higher than the height of the second minimum thermopair 170 usually, then normally loads polycrystalline silicon raw material, preferably, spreads the limit with the smooth cycle stock of bulk;
2) will more than install the silicon material crucible 140 be put in the polycrystalline silicon ingot or purifying furnace 100, closed ingot furnace, the level interval of the first thermopair 160 and the second thermopair 170 is 3mm, concrete set-up mode can be: with the first thermopair 160 and the second thermopair 170 be inserted into crucible 140 sidewall contacts till, fix again the first thermopair 160 and the second thermopair 170 after then extracting outward 3mm;
3) closed circuit, make well heater feed more than 190 pairs crucible 140 progressively Heating temperature make the step by step fusing from top to bottom of silicon material in the crucible 140 to more than the silicon material fusing point;
4) signal of the first thermopair 160 and the second thermopair 170 feeds back to respectively the industrial computer of polycrystalline silicon ingot or purifying furnace 100, when receiving the jump signal of polycrystalline silicon ingot or purifying furnace 100, industrial computer will carry out respectively 1 grade and 2 grades of warnings, operator will judge according to alarm condition the residual altitude of crystal seed, enter the long crystals growth stage by the in good time leapfrog of monitoring result.During this was used, industrial computer was received first the signal that the first thermopair 160 feeds back and reports to the police that reporting to the police also, leapfrog enters the long crystals growth stage behind the signal of receiving the second thermopair 170 feedbacks.
Above-mentioned polycrystalline silicon ingot or purifying furnace 100 is provided with thermopair in crucible 140 side-walls, utilizes the value of feedback of thermopair can accurately control crystal seed fusing leapfrog height, can implement automatic production in conjunction with automatization control.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an ingot casting crystal seed fusing height control method is characterized in that, may further comprise the steps:
The control thermal field makes the crystal seed and the from top to bottom progressively fusing of the polycrystalline silicon raw material above the crystal seed that are laid in the crucible;
Utilize thermopair to obtain temperature jump signal on the crucible wall;
Judge the height of crystal seed fusing according to the signal that gets access to, be melted to the setting height time control at crystal seed and heat and enter the long brilliant stage by the fusion stage leapfrog.
2. ingot casting crystal seed according to claim 1 melts height control method, it is characterized in that, the described utilization in the step that thermopair obtains the temperature jump signal on the crucible wall, the point for measuring temperature of described thermopair is 0～60mm apart from the horizontal throw of crucible wall, is 0～150mm apart from the vertical range of crucible bottom.
3. ingot casting crystal seed according to claim 1 melts height control method, it is characterized in that, describedly be melted to before the setting height time control heats a step that enters the long brilliant stage by the fusion stage at crystal seed, judge when crystal seed is melted to default warning height and report to the police.
4. ingot casting crystal seed fusing height control method according to claim 3 is characterized in that described default warning is provided with one highly at least.
5. ingot casting crystal seed according to claim 1 fusing height control method is characterized in that, described control thermal field, the polycrystalline silicon raw material that makes the crystal seed that is laid in the crucible and crystal seed top are from top to bottom progressively before the step of fusing, and be further comprising the steps of:
In crucible, lay crystal seed;
Above crystal seed, lay polycrystalline silicon raw material.
6. polycrystalline silicon ingot or purifying furnace, comprise heat-insulation cage, place the interior heat exchange platform of described heat-insulation cage, be placed on the crucible on the described heat exchange platform, it is characterized in that, described polycrystalline silicon ingot or purifying furnace also comprises the thermopair that is arranged on the crucible outside, and the point for measuring temperature of described thermopair contacts with crucible wall or the interval arranges.
7. polycrystalline silicon ingot or purifying furnace according to claim 6 is characterized in that, is furnished with successively one or more described thermopairs along described crucible short transverse.
8. polycrystalline silicon ingot or purifying furnace according to claim 6 is characterized in that, the point for measuring temperature of described thermopair is 0～60mm apart from the horizontal throw of crucible wall, is 0～150mm apart from the vertical range of crucible bottom.
9. polycrystalline silicon ingot or purifying furnace according to claim 6 is characterized in that, also is provided with the graphite backplate between described crucible and the heat-insulation cage, and the point for measuring temperature of described thermopair is apart from the horizontal throw of the crucible wall thickness greater than described graphite backplate; Or corresponding described thermopair is provided with the galvanic couple dead slot on the described graphite backplate, and described thermopair extend in the described galvanic couple dead slot.
10. polycrystalline silicon ingot or purifying furnace according to claim 6 is characterized in that, described thermopair is fixed on the body of heater or described heat-insulation cage of described ingot furnace.
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| CN103924295A (en) * | 2014-03-01 | 2014-07-16 | 浙江晶盛机电股份有限公司 | Polysilicon ingot furnace and method for monitoring polycrystalline ingot seed height at multiple temperature measuring points |
| CN104152993A (en) * | 2014-08-06 | 2014-11-19 | 江西赛维Ldk太阳能高科技有限公司 | Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace |
| CN104294357A (en) * | 2014-10-23 | 2015-01-21 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline ingot casting seed crystal melting control method and polycrystalline ingot casting furnace |
| CN109082643A (en) * | 2018-09-04 | 2018-12-25 | 大连理工大学 | A kind of arsenic, P elements are co-doped with the casting technique for preparing N-shaped polycrystalline silicon target |
| CN111043992A (en) * | 2018-10-15 | 2020-04-21 | 胜高股份有限公司 | Method and apparatus for evaluating inner peripheral surface of quartz crucible |
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| CN104152993A (en) * | 2014-08-06 | 2014-11-19 | 江西赛维Ldk太阳能高科技有限公司 | Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace |
| CN104294357A (en) * | 2014-10-23 | 2015-01-21 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline ingot casting seed crystal melting control method and polycrystalline ingot casting furnace |
| CN104294357B (en) * | 2014-10-23 | 2017-07-04 | 江西赛维Ldk太阳能高科技有限公司 | A kind of polycrystalline cast ingot seed crystal fusing control method and polycrystalline silicon ingot or purifying furnace |
| CN109082643A (en) * | 2018-09-04 | 2018-12-25 | 大连理工大学 | A kind of arsenic, P elements are co-doped with the casting technique for preparing N-shaped polycrystalline silicon target |
| CN109082643B (en) * | 2018-09-04 | 2020-09-29 | 大连理工大学 | Casting process for preparing n-type polycrystalline silicon target material by co-doping arsenic and phosphorus elements |
| CN111043992A (en) * | 2018-10-15 | 2020-04-21 | 胜高股份有限公司 | Method and apparatus for evaluating inner peripheral surface of quartz crucible |
| CN111043992B (en) * | 2018-10-15 | 2021-10-22 | 胜高股份有限公司 | Method and apparatus for evaluating inner peripheral surface of quartz crucible |
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Application publication date: 20131023 |