CN103346234A - LED packaging structure and packaging method thereof - Google Patents
LED packaging structure and packaging method thereof Download PDFInfo
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- CN103346234A CN103346234A CN2013102014199A CN201310201419A CN103346234A CN 103346234 A CN103346234 A CN 103346234A CN 2013102014199 A CN2013102014199 A CN 2013102014199A CN 201310201419 A CN201310201419 A CN 201310201419A CN 103346234 A CN103346234 A CN 103346234A
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Abstract
Provided in the invention is an LED packaging structure that comprises an LED chip, a packaging glue, and a packaging substrate. The LED packaging structure is characterized in that an insulated bonding layer is arranged at a surface where the LED chip, the packaging substrate, and the packaging glue are bonded. According to the invention, because the bonding layer is arranged at the surface where the LED chip, the packaging substrate, and the packaging glue are bonded, all components of the packaged LED device have consistent bonding performances, thereby improving reliability of the LED device. Meanwhile, the requirement on the bonding performance of the packaging glue is reduced and the cost of the packaging glue is lowered.
Description
Technical field
The present invention relates to the LED technical field, specifically a kind of LED encapsulating structure and method for packing thereof.
Background technology
LED(Light Emitting Diode, light-emitting diode) be a kind of solid-state semiconductor device, can convert electrical energy into luminous energy.Have that power consumption is little, spotlight effect good, reaction speed is fast, controllability is strong, can bear advantages such as high impact forces, long service life, environmental protection.LED just progressively substitutes conventional light source, become novel the 4th generation light source.
At present, industry two kinds of led chips comparatively commonly used: one is packed LED chip; Another is flip LED chips.See also Fig. 1, for adopting the encapsulating structure of packed LED chip, comprising: base plate for packaging 1, reflector 2, packaging plastic 3, led chip 4, gold thread 5.Led chip 4 mainly comprises substrate, N-type layer, luminescent layer, P type layer and the N electrode, the P electrode that are connected with this N-type layer, this P type layer conduction respectively.Led chip 4 is fixed on the base plate for packaging 1, and its N electrode, P electrode form conduction by gold thread 5 with the positive and negative electrode of base plate for packaging 1 respectively and be connected.Packaging plastic 3 covers on the led chip 4, and this led chip 4 is coated.
See also Fig. 2, for adopting the encapsulating structure of flip LED chips, comprising: packaging plastic 40, led chip 20, base plate for packaging 10, solid crystal layer 30.Led chip 20 mainly comprises substrate, N-type layer, luminescent layer, P type layer, reflector and the N electrode, the P electrode that are connected with this N-type layer, this P type layer conduction respectively.Led chip 20 is fixed on the base plate for packaging 1, its N electrode, P electrode respectively by the conduction solid crystal layer 30(or, weld layer) be connected with the positive and negative pad of base plate for packaging 10.Packaging plastic 3 covers on the led chip 20, and this led chip 20 is coated.
No matter packed LED chip and flip LED chips all are to send the light (as blue light) of monochromatic wavelength by luminescent layer after class at electric field action, penetrate outside the LED device by packaging plastic then, according to the difference of packaging plastic material, form the spectrum that contains the polychrome wavelength.Packaging plastic can be simple layer, also can be multilayer laminated, generally adopts fluorescent glue, epoxy resin, perspex or glass material.Be arranged on the surface that packaging plastic on the led chip need be attached to led chip and base plate for packaging by the adhesive property of self, its adhesion property is along with the material difference of bonding interface there are differences.Such as, the sapphire material of led chip and carbofrax material and packaging plastic to adhere to adhesive property just inconsistent; The metallic circuit on base plate for packaging surface part, nonmetal circuit part and packaging plastic to adhere to adhesive property also different.The adhesive property that adheres to of packaging plastic and led chip, base plate for packaging all there are differences like this, and this kind phenomenon greatly reduces the reliability of LED device; For improving the reliability of LED device, avoid taking place the phenomenon that packaging plastic breaks away from, therefore, need to use the comparatively packaging plastic of excellence of adhesive property in the encapsulation process, be unfavorable for the cost control of packaging plastic.
Summary of the invention
A wherein purpose of the present invention is to provide a kind of LED encapsulating structure.
Another object of the present invention is to provide a kind of method for packing of above-mentioned LED encapsulating structure.
In order to achieve the above object, the present invention has adopted following technical scheme:
A kind of LED encapsulating structure comprises led chip, packaging plastic, base plate for packaging, and the bonding surface of this led chip, this base plate for packaging and this packaging plastic is provided with the adhesive linkage of insulation.
As the preferred technical solution of the present invention: the solid crystal layer between described led chip and this base plate for packaging, itself and this bonding surface of packaging plastic is provided with the adhesive linkage of insulation.
As the preferred technical solution of the present invention: the thickness of described tack coat is less than 1/4th of this led chip emission wavelength.
As the preferred technical solution of the present invention: described adhesive linkage is the tack coat of inorganic material.
As the preferred technical solution of the present invention: described adhesive linkage is the tack coat of silicon dioxide or silicon nitride material.
A kind of method for packing of LED encapsulating structure comprises led chip, packaging plastic, base plate for packaging, at first, generates the adhesive linkage of an insulation respectively on the bonding surface of this led chip, this base plate for packaging and this packaging plastic; Then, this led chip is fixed on crystal bonding area territory on this base plate for packaging; At last, encapsulate this packaging plastic;
Perhaps, at first, this led chip is fixed on crystal bonding area territory on this base plate for packaging; Then, generate the adhesive linkage of an insulation respectively on the bonding surface of this led chip, this base plate for packaging and this packaging plastic; At last, encapsulate this packaging plastic.
As the preferred technical solution of the present invention: the solid crystal layer between described led chip and this base plate for packaging, itself and this bonding surface of packaging plastic is provided with the adhesive linkage of insulation.
As the preferred technical solution of the present invention: the thickness of described tack coat is less than 1/4th of this led chip emission wavelength.
As the preferred technical solution of the present invention: described adhesive linkage is the tack coat of inorganic material.
As the preferred technical solution of the present invention: described adhesive linkage using plasma strengthens chemical vapour deposition technique and generates.
Compared with prior art, the present invention arranges an adhesive linkage on the bonding surface of led chip, base plate for packaging and packaging plastic, makes each position of encapsulated LED device have the consistent adhesive property that adheres to, and improves the reliability of LED device; Simultaneously, reduce the requirement to the packaging plastic adhesive property, reduce the cost of packaging plastic.
Description of drawings
Fig. 1 is the encapsulating structure schematic diagram of packed LED chip in the known technology.
Fig. 2 is the encapsulating structure schematic diagram of flip LED chips in the known technology.
Fig. 3 is the schematic diagram of first embodiment of the invention.
Fig. 4 is the schematic diagram of second embodiment of the invention.
Fig. 5 is flow chart of steps one of the present invention.
Fig. 6 is flow chart of steps two of the present invention.
Embodiment
Embodiment one
In the present embodiment, adopting the led chip of formal dress with led chip is preferred version, is illustrated, but is not limited thereto.
See also Fig. 3, the LED encapsulating structure shown in the figure comprises led chip 102, packaging plastic 103, the base plate for packaging 101 of formal dress.This led chip 102 directly is fixed on the base plate for packaging 101, and this packaging plastic 103 coats this led chip 102 fully.Be provided with the adhesive linkage 104 of one deck insulation on this led chip 102, this base plate for packaging 101 and this packaging plastic 103 bonding surfaces.
More excellent, the thickness of described tack coat 104 is less than 1/4th of these led chip 102 emission wavelengths; The emission wavelength of the led chip of using always according to present industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.
See also Fig. 5, the method for packing of above-mentioned LED encapsulating structure, it may further comprise the steps:
Generate the adhesive linkage 104 of an insulation at first, respectively on this led chip 102, this base plate for packaging 101 and this packaging plastic 103 bonding surfaces.Wherein, the crystal bonding area territory on this base plate for packaging 101 (zone of fixed L ED chip) need be reserved, and do not need to generate adhesive linkage 104.
This adhesive linkage 104 can strengthen chemical vapour deposition technique (PECVD, Plasma-enhanced Chemical Vapor Deposition) generation by using plasma.More excellent, the thickness of this tack coat 104 is less than 1/4th of these led chip 102 emission wavelengths; The emission wavelength of the led chip of using always according to present industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.Then, this led chip 102 is fixed on crystal bonding area territory on this base plate for packaging 101; At last, encapsulate this packaging plastic 103.
Perhaps, see also Fig. 6, also can at first this led chip 102 be fixed on the crystal bonding area territory on this base plate for packaging 101.Then, generate the adhesive linkage 104 of an insulation respectively on this led chip 102, this base plate for packaging 101 and this packaging plastic 103 bonding surfaces; At last, encapsulate this packaging plastic 103.
Embodiment two
In the present embodiment, adopting the led chip of upside-down mounting with led chip is preferred version, is illustrated, but is not limited thereto.
See also Fig. 4, the LED encapsulating structure shown in the figure, comprise the led chip 106 of upside-down mounting, solid crystal layer 107(or, weld layer), packaging plastic 103, base plate for packaging 108.This led chip 106 is fixed by solid crystal layer 107 and the welding disking area of base plate for packaging 108, and this packaging plastic 103 coats this led chip 106 fully.Be provided with the adhesive linkage 104 of one deck insulation on this led chip 106, this base plate for packaging 108 and this packaging plastic 103 bonding surfaces.For further making led chip, base plate for packaging have the consistent adhesive property that adheres to packaging plastic, more excellent, Gu the bonding surface of crystal layer 107 and this packaging plastic 103 lateral surface of solid crystal layer 107 (shown in the figure for) is provided with the adhesive linkage 104 of insulation.
More excellent, the thickness of above-mentioned tack coat 104 is less than 1/4th of these led chip 106 emission wavelengths; The emission wavelength of the led chip of using always according to present industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.
See also Fig. 5, the method for packing of above-mentioned LED encapsulating structure, it may further comprise the steps:
Generate the adhesive linkage 104 of an insulation at first, respectively on this led chip 106, this base plate for packaging 108 and this packaging plastic 103 bonding surfaces.Wherein, the welding disking area on this base plate for packaging 108 (zone of fixed L ED chip) need be reserved, and does not need to generate adhesive linkage 104.
This adhesive linkage 104 can strengthen chemical vapour deposition technique (PECVD, Plasma-enhanced Chemical Vapor Deposition) generation by using plasma.More excellent, the thickness of this tack coat 104 is less than 1/4th of these led chip 106 emission wavelengths; The emission wavelength of the led chip of using always according to present industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.Then, this led chip 106 is fixed on welding disking area on this base plate for packaging 108; At last, encapsulate this packaging plastic 103.
The led chip 106 of upside-down mounting is fixed by solid crystal layer 107 and the welding disking area of base plate for packaging 108, when adopting above-mentioned method for packing that the encapsulating structure that adopts flip LED chips is encapsulated, owing to be to generate tack coat 104 at led chip 106 and base plate for packaging 108 earlier, and then carry out solid crystalline substance, therefore crystal layer 107 and this packaging plastic 103 bonding surfaces can't generate tack coat 104 admittedly.In actual package is produced, for making solid crystal layer 107 and this packaging plastic 103 bonding surfaces generate tack coat 104, the preferred following method for packing of flip LED chips, see also Fig. 6, can at first carry out solid brilliant operation to led chip 106, make led chip 106 be fixed on the welding disking area of base plate for packaging 108 by solid crystal layer 107; Then, generate the adhesive linkage 104 of an insulation respectively on the solid crystal layer 107 of 108 of this led chip 106, this led chip 106 and this base plate for packaging, this base plate for packaging 108 and this packaging plastic 103 bonding surfaces; At last, encapsulate this packaging plastic 103.
The above is preferred embodiment of the present invention only, is not to limit practical range of the present invention; Every equivalence of doing according to the present invention changes and revises, and is all covered by the scope of claims of the present invention.
Claims (10)
1. a LED encapsulating structure comprises led chip, packaging plastic, base plate for packaging, it is characterized in that: the bonding surface of this led chip, this base plate for packaging and this packaging plastic is provided with the adhesive linkage of insulation.
2. a kind of LED encapsulating structure according to claim 1, it is characterized in that: the solid crystal layer between described led chip and this base plate for packaging, itself and this bonding surface of packaging plastic is provided with the adhesive linkage of insulation.
3. a kind of LED encapsulating structure according to claim 1 and 2, it is characterized in that: the thickness of described tack coat is less than 1/4th of this led chip emission wavelength.
4. a kind of LED encapsulating structure according to claim 1 and 2, it is characterized in that: described adhesive linkage is the tack coat of inorganic material.
5. a kind of LED encapsulating structure according to claim 4, it is characterized in that: described adhesive linkage is the tack coat of silicon dioxide or silicon nitride material.
6. the method for packing of a LED encapsulating structure comprises led chip, packaging plastic, base plate for packaging, it is characterized in that:
Generate the adhesive linkage of an insulation at first, respectively on the bonding surface of this led chip, this base plate for packaging and this packaging plastic; Then, this led chip is fixed on crystal bonding area territory on this base plate for packaging; At last, encapsulate this packaging plastic;
Perhaps, at first, this led chip is fixed on crystal bonding area territory on this base plate for packaging; Then, generate the adhesive linkage of an insulation respectively on the bonding surface of this led chip, this base plate for packaging and this packaging plastic; At last, encapsulate this packaging plastic.
7. the method for packing of a kind of LED encapsulating structure according to claim 6, it is characterized in that: the solid crystal layer between described led chip and this base plate for packaging, itself and this bonding surface of packaging plastic is provided with the adhesive linkage of insulation.
8. according to the method for packing of claim 6 or 7 described a kind of LED encapsulating structures, it is characterized in that: the thickness of described tack coat is less than 1/4th of this led chip emission wavelength.
9. according to the method for packing of claim 6 or 7 described a kind of LED encapsulating structures, it is characterized in that: described adhesive linkage is the tack coat of inorganic material.
10. according to the method for packing of claim 6 or 7 described a kind of LED encapsulating structures, it is characterized in that: described adhesive linkage using plasma strengthens chemical vapour deposition technique and generates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2013102014199A CN103346234A (en) | 2013-05-24 | 2013-05-24 | LED packaging structure and packaging method thereof |
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| CN2013102014199A CN103346234A (en) | 2013-05-24 | 2013-05-24 | LED packaging structure and packaging method thereof |
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| CN103346234A true CN103346234A (en) | 2013-10-09 |
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| CN2013102014199A Pending CN103346234A (en) | 2013-05-24 | 2013-05-24 | LED packaging structure and packaging method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068832A (en) * | 2017-04-21 | 2017-08-18 | 深圳市洲明科技股份有限公司 | A kind of wafer-level package LED structure and preparation method thereof |
| CN107180903A (en) * | 2017-04-21 | 2017-09-19 | 深圳市洲明科技股份有限公司 | A kind of CHIP LED products and preparation method |
| CN110827702A (en) * | 2019-10-29 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Assembled display panel and manufacturing process method of assembled display panel |
| CN113302757A (en) * | 2021-03-03 | 2021-08-24 | 泉州三安半导体科技有限公司 | LED packaging device and preparation method thereof |
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| US20090261366A1 (en) * | 2005-09-28 | 2009-10-22 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| CN102569678A (en) * | 2012-03-07 | 2012-07-11 | 上海大学 | Composite thin film packaging method of top emission OLED (Organic Light Emitting Diode) |
| CN103094448A (en) * | 2011-10-27 | 2013-05-08 | 铼钻科技股份有限公司 | Light emitting diode with aluminum nitride layer, packaging structure and preparation method thereof |
| CN203351646U (en) * | 2013-05-24 | 2013-12-18 | 大连德豪光电科技有限公司 | LED packaging structure |
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2013
- 2013-05-24 CN CN2013102014199A patent/CN103346234A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090261366A1 (en) * | 2005-09-28 | 2009-10-22 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| CN103094448A (en) * | 2011-10-27 | 2013-05-08 | 铼钻科技股份有限公司 | Light emitting diode with aluminum nitride layer, packaging structure and preparation method thereof |
| CN102569678A (en) * | 2012-03-07 | 2012-07-11 | 上海大学 | Composite thin film packaging method of top emission OLED (Organic Light Emitting Diode) |
| CN203351646U (en) * | 2013-05-24 | 2013-12-18 | 大连德豪光电科技有限公司 | LED packaging structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068832A (en) * | 2017-04-21 | 2017-08-18 | 深圳市洲明科技股份有限公司 | A kind of wafer-level package LED structure and preparation method thereof |
| CN107180903A (en) * | 2017-04-21 | 2017-09-19 | 深圳市洲明科技股份有限公司 | A kind of CHIP LED products and preparation method |
| CN110827702A (en) * | 2019-10-29 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Assembled display panel and manufacturing process method of assembled display panel |
| CN113302757A (en) * | 2021-03-03 | 2021-08-24 | 泉州三安半导体科技有限公司 | LED packaging device and preparation method thereof |
| CN113302757B (en) * | 2021-03-03 | 2023-12-05 | 泉州三安半导体科技有限公司 | LED packaging device and preparation method thereof |
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Application publication date: 20131009 |