CN103337985B - A kind of single mantle friction generator based on side-friction and preparation method thereof - Google Patents
A kind of single mantle friction generator based on side-friction and preparation method thereof Download PDFInfo
- Publication number
- CN103337985B CN103337985B CN201310293792.1A CN201310293792A CN103337985B CN 103337985 B CN103337985 B CN 103337985B CN 201310293792 A CN201310293792 A CN 201310293792A CN 103337985 B CN103337985 B CN 103337985B
- Authority
- CN
- China
- Prior art keywords
- friction
- metal electrode
- layer
- conductive layer
- generator based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention relates to the integrated processing technique field of MEMS, in particular to a kind of single mantle friction generator based on side-friction and preparation method thereof, relative by two groups of same structures, mutual level friction composition, wherein, described structure comprises five layers, and outermost layer is conductive layer, adjacent with conductive layer is thin layer, thin layer opposite side is provided with film nano structure sheaf, and film nano structure sheaf opposite side is provided with metal electrode, and metal electrode opposite side is provided with metal electrode nanostructured layers; Advantage of the present invention is: the double-layer films generator with traditional vertical direction is compared, this single layer structure make use of the frictional force of horizontal direction, and electrode exports at same plane, be conducive to follow-up processing and integrated, nano generator and preparation method thereof the technique that the present invention proposes is simple, cost is low, productive rate is high, can be mass, be easy to integrated processing and the friction that new structure effectively make use of occurring in nature horizontal direction is proposed.
Description
Technical field
The present invention relates to the integrated processing technique field of MEMS, particularly a kind of single mantle friction generator based on side-friction and preparation method thereof.
Background technology
MEMS (micro electro mechanical system) (Micro-electro-mechanical system, MEMS) is the multi-field cross discipline of a new and high technology, and development in recent years is swift and violent, receives extensive concern.MEMS (micro electro mechanical system) refer to size centimetre below so that less midget plant, primarily of transducer, actuator, micro-energy three parts composition.Due to the reduction gradually of MEMS size, the development of micro-energy part far can not meet current demand.Be converted to the research of the energy collecting device of electric energy based on the energy will existed in environment (mechanical energy, heat energy, solar energy etc.), the energy supply for MEMS proposes feasible scheme.Wherein collection machinery can energy collecting device be wherein one of modal one.Mechanical energy energy collecting device has piezoelectric type according to operation principle, and electromagnetic type, electrostatic, friction-type etc. are several.Wherein the energy collecting device of friction-type have export high, preparing the advantages such as simple, is study hotspot in recent years.
Wang Zhonglin teaches group and first utilizes PET and Kapton material phase mutual friction charge inducing, and after separation of charge, coating-forming voltage electric current exports, the nano generator of formation.[Feng-Ru Fan,et al.Nano Energy,vol.1,pp.328,2012]。In order to improve output performance, professor Wang Zhonglin proposes and makes two friction surfaces be separated rapidly [Wang, S., Lin by domes, L.and Wang, Z.L.Nano Letters, vol.12, pp.6339,2012], its output voltage peak value has brought up to the magnitude of hectovolt.But the nano generator of above-mentioned friction-type is all the vibration utilizing vertical direction, and output electrode is positioned on two pieces of friction plates, is unfavorable for process.
Summary of the invention
For the deficiencies in the prior art, the object of the invention is to propose a kind of single mantle friction generator based on side-friction and preparation method thereof, adopt one deck fexible film, with metal grating structure, form microgenerator, when the film occurred level friction of two these designs, utilize metal and fexible film to the difference of charge confinement ability, charge inducing accumulation can be formed on the different materials of same film, thus form output current.Metal grating structure now, both as the material of friction, is also an electrode of nano generator simultaneously.Wherein fexible film surface defines highdensity nanostructure by traditional MEMS processing technology, substantially increases the roughness of friction surface, thus improves output voltage electric current further.This invention takes following technical scheme: relative by two groups of same structures, mutual level friction composition, wherein, described structure comprises five layers, outermost layer is conductive layer, adjacent with conductive layer is thin layer, thin layer opposite side is provided with film nano structure sheaf, and film nano structure sheaf opposite side is provided with metal electrode, and metal electrode opposite side is provided with metal electrode nanostructured layers.
Metal electrode is palisade, and the metal electrode of two groups of structures is relatively staggered, and the material of metal electrode is aluminium or nickel or copper is silver-colored or golden or platinum.
The material of thin layer is polytetrafluoroethylene (polytetrafluoroetylene, PTFE) or polyethylene terephthalate (Polyethylene terephthalate, PET) or polyimides (Polyimide, PI).
The material of conductive layer is gold or silver or platinum or copper or aluminium or the metal material such as titanium or tungsten.
The material of conductive layer is indium tin metal oxide or the semi-conducting material such as III-V or highly doped silicon.
Described metal palisade thickness of electrode is 100nm – 2000 μm.
Described thin film layer thickness is 5 μ m – 2000 μm.
The thickness of described conductive layer is 50nm – 3000nm.
Based on a single mantle friction mechanism of power generation Preparation Method for side-friction, comprise the steps:
Step 1: the positive plasma bombardment thin-film surface utilizing reactive ion etching process (Reactive Ion Etching, RIE) to produce, makes thin layer one side surface form irregular film nano structure sheaf.
Step 2: utilize sputtering or evaporate or chemical vapor deposition method, producing complete metal electrode at film nano structure sheaf one side surface;
Step 3: utilize photoresist mask to realize patterned metal electrode by photoetching, thus obtain the metal electrode of grating structure;
Step 4: utilize the method for heating water bath to obtain metal electrode nanostructured layers by the temperature and time controlling heating at metal electrode one side surface;
Step 5: utilize evaporation or sputter or chemical vapor deposition method, makes conductive layer on thin layer opposite side surface.
Described reactive ion etching process parameter comprises: coil power is 300W – 600W; Etching gas is O
2, CF
4, Ar
2; Platen power is 50W-300W; Etch period is 20s-100s.
Advantage of the present invention is: the double-layer films generator with traditional vertical direction is compared, this single layer structure make use of the frictional force of horizontal direction, and electrode exports at same plane, be conducive to follow-up processing and integrated, nano generator and preparation method thereof the technique that the present invention proposes is simple, cost is low, productive rate is high, can be mass, be easy to integrated processing and the friction that new structure effectively make use of occurring in nature horizontal direction is proposed.
Accompanying drawing explanation
Fig. 1 is nano generator structural representation of the present invention;
Fig. 2 is the palisade aluminium electrode stereoscan photograph that nano generator of the present invention has nanostructure;
Fig. 3 is nano generator test result figure of the present invention, and its output voltage range is approximately 8-30V;
The test result figure of Fig. 4 to be nano generator of the present invention be 1 μ F capacitor charging;
The test result figure of Fig. 5 to be nano generator of the present invention be capacitor charging.
Embodiment
When considered in conjunction with the accompanying drawings, by referring to detailed description below, more completely can understand the present invention better and easily learn wherein many adjoint advantages, but accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Embodiment: as shown in Figures 1 to 5, comprise conductive layer 1, the aluminium electrode 2 of grating structure, aluminium electrode nanostructured layers 2-1, PTFE thin layer 3, film nano structure sheaf 3-1, preparation process is as follows:
Step 1: positive plasma bombardment PTFE thin layer 3 surface utilizing reactive ion etching process to produce, makes PTFE thin layer 3 one side surface form irregular film nano structure sheaf 3-1.
Step 2: utilize sputtering or evaporate or chemical vapor deposition method, at the complete aluminium electrode that film nano structure sheaf 3-1 mono-side surface is produced;
Step 3: utilize photoresist mask to realize patterned metal electrode by photoetching, thus obtain the aluminium electrode 2 of grating structure;
Step 4: utilize the method for heating water bath to obtain aluminium electrode nanostructured layers 2-1 by the temperature and time controlling heating at aluminium electrode 2 one side surface of grating structure, preparation parameter is: temperature 70 DEG C of – 80 DEG C, time 10min – 20min;
Step 5: utilize evaporation or sputter or chemical vapor deposition method, making conductive layer 1 on thin layer 3 opposite side surface, is metal or the semi-conducting material of good conductivity, metals like gold, silver, platinum, copper, aluminium, titanium, tungsten etc.; Semi-conducting material comprises indium tin metal oxide (ITO), III-V, highly doped silicon etc., and thickness is 50nm – 2000nm.
Aluminium electrode 2 thickness of described grating structure is 100nm – 2000 μm.
Described aluminium electrode nanostructured layers 2-1 thickness is 10nm-1 μm.
Described thin layer 3 thickness is 5 μ m – 2000 μm.
Described film nano structure sheaf 3-1 thickness is 10nm-1 μm.
The thickness of described conductive layer 1 is 50nm – 3000nm.
Be described in detail a kind of single nano surface generator based on side-friction provided by the present invention and preparation method thereof above, the exemplary embodiment of above reference accompanying drawing to the application is described.Those skilled in the art should understand that; above-mentioned embodiment is only used to the object that illustrates and the example of lifting; instead of be used for limiting; the any amendment done under all instructions in the application and claims, equivalently to replace, all should be included in and this application claims in the scope of protection.
Claims (9)
1. the single mantle friction generator based on side-friction, it is characterized in that: described generator relative by two groups of same structures, mutual level friction composition, wherein, described structure comprises five layers, outermost layer is conductive layer, and adjacent with conductive layer is thin layer, and thin layer opposite side is provided with film nano structure sheaf, film nano structure sheaf opposite side is provided with metal electrode, and metal electrode opposite side is provided with metal electrode nanostructured layers;
Metal electrode is grating structure, and the metal electrode of two groups of structures is relatively staggered, and the material of metal electrode is aluminium or nickel or copper is silver-colored or golden or platinum.
2. a kind of single mantle friction generator based on side-friction according to claim 1, is characterized in that: the material of thin layer is polytetrafluoroethylene or polyethylene terephthalate or polyimides.
3. a kind of single mantle friction generator based on side-friction according to claim 1, is characterized in that: the material of conductive layer is gold or silver or platinum or copper or aluminium or titanium or tungsten.
4. a kind of single mantle friction generator based on side-friction according to claim 1, is characterized in that: the material of conductive layer is indium tin metal oxide or III-V or highly doped silicon.
5. a kind of single mantle friction generator based on side-friction according to claim 1, is characterized in that: the metal electrode thickness of described grating structure is 100nm – 2000 μm.
6. a kind of single mantle friction generator based on side-friction according to claim 3, is characterized in that: described thin film layer thickness is 5 μ m – 2000 μm.
7. a kind of single mantle friction generator based on side-friction according to claim 3, is characterized in that: the thickness of described conductive layer is 50nm – 3000nm.
8. a kind of single mantle friction mechanism of power generation Preparation Method based on side-friction according to claim 1, is characterized in that comprising the steps:
Step 1: the positive plasma bombardment thin-film surface utilizing reactive ion etching process to produce, makes thin layer one side surface form irregular film nano structure sheaf;
Step 2: utilize sputtering or evaporate or chemical vapor deposition method, producing complete metal electrode at film nano structure sheaf one side surface;
Step 3: utilize photoresist mask to realize patterned metal electrode by photoetching, thus obtain the metal electrode of grating structure;
Step 4: utilize the method for heating water bath to obtain metal electrode nanostructured layers by the temperature and time controlling heating at metal electrode one side surface;
Step 5: utilize evaporation or sputter or chemical vapor deposition method, makes conductive layer on thin layer opposite side surface.
9. a kind of single mantle friction mechanism of power generation Preparation Method based on side-friction according to claim 8, is characterized in that described step 1) in: described reactive ion etching process parameter comprises: coil power is 300W – 600W; Etching gas is O
2or CF
4or Ar
2; Platen power is 50W-300W; Etch period is 20s-100s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310293792.1A CN103337985B (en) | 2013-07-12 | 2013-07-12 | A kind of single mantle friction generator based on side-friction and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310293792.1A CN103337985B (en) | 2013-07-12 | 2013-07-12 | A kind of single mantle friction generator based on side-friction and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103337985A CN103337985A (en) | 2013-10-02 |
| CN103337985B true CN103337985B (en) | 2015-10-28 |
Family
ID=49246101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310293792.1A Expired - Fee Related CN103337985B (en) | 2013-07-12 | 2013-07-12 | A kind of single mantle friction generator based on side-friction and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103337985B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103523743B (en) * | 2013-10-28 | 2016-06-29 | 北京大学科技开发部 | A kind of miniature friction formula energy collecting device and preparation method thereof |
| CN104600114B (en) * | 2013-11-01 | 2019-02-19 | 北京纳米能源与***研究所 | Rub field effect transistor |
| CN103643227B (en) * | 2013-12-04 | 2016-02-03 | 天津大学 | A kind of polyimide silver and preparation method thereof |
| CN103825489B (en) * | 2014-02-27 | 2016-05-04 | 北京纳米能源与***研究所 | Revolving frictional generator, voltage-stabilizing output circuit and electric supply installation |
| CN104980059B (en) * | 2014-04-04 | 2018-10-16 | 北京纳米能源与***研究所 | A kind of output device of the electrical signal including Cyclic flexion structure |
| CN104980060B (en) * | 2014-04-09 | 2017-05-10 | 北京纳米能源与***研究所 | Triboelectric nanometer generator capable of collecting liquid mechanical energy and power generating method thereof |
| CN104065297A (en) * | 2014-05-06 | 2014-09-24 | 北京大学 | Friction generator based on existing floors |
| CN104856662A (en) * | 2015-06-10 | 2015-08-26 | 京东方科技集团股份有限公司 | Portable physiological parameter detection device and physiological parameter detection method |
| WO2017020290A1 (en) * | 2015-08-06 | 2017-02-09 | 深圳麦克韦尔股份有限公司 | Electronic cigarette and power supply apparatus thereof |
| CN111665937B (en) * | 2020-05-25 | 2021-08-27 | 东华大学 | Integrated self-driven full-textile gesture recognition data glove |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668358A (en) * | 2009-12-25 | 2012-09-12 | 松下电器产业株式会社 | Vibration power generator, vibration power generation apparatus, and electronic device and communication apparatus having vibration power generation apparatus installed thereon |
| CN102710166A (en) * | 2012-04-13 | 2012-10-03 | 纳米新能源（唐山）有限责任公司 | Friction generator |
| CN203057022U (en) * | 2012-12-27 | 2013-07-10 | 纳米新能源（唐山）有限责任公司 | Nanometer friction generator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7883832B2 (en) * | 2005-01-04 | 2011-02-08 | International Business Machines Corporation | Method and apparatus for direct referencing of top surface of workpiece during imprint lithography |
-
2013
- 2013-07-12 CN CN201310293792.1A patent/CN103337985B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668358A (en) * | 2009-12-25 | 2012-09-12 | 松下电器产业株式会社 | Vibration power generator, vibration power generation apparatus, and electronic device and communication apparatus having vibration power generation apparatus installed thereon |
| CN102710166A (en) * | 2012-04-13 | 2012-10-03 | 纳米新能源（唐山）有限责任公司 | Friction generator |
| CN203057022U (en) * | 2012-12-27 | 2013-07-10 | 纳米新能源（唐山）有限责任公司 | Nanometer friction generator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103337985A (en) | 2013-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103337985B (en) | A kind of single mantle friction generator based on side-friction and preparation method thereof | |
| Ryu et al. | Hybrid energy harvesters: toward sustainable energy harvesting | |
| Quan et al. | Robust thin films‐based triboelectric nanogenerator arrays for harvesting bidirectional wind energy | |
| Cao et al. | Rotating-sleeve triboelectric–electromagnetic hybrid nanogenerator for high efficiency of harvesting mechanical energy | |
| JP6074567B2 (en) | Pulse generator and generator group | |
| CN103023371B (en) | Micro-nano integrated generator and manufacturing method thereof | |
| US9812993B2 (en) | Single electrode triboelectric generator | |
| EP2975758B1 (en) | Sliding frictional nano generator and power generation method | |
| JP6059370B2 (en) | Slide friction nano-generator and power generation method | |
| CN103107737B (en) | Piezoelectricity friction combined type micro-nano generator and preparation method thereof | |
| US9595894B2 (en) | Triboelectric nanogenerator for powering portable electronics | |
| CN103856096B (en) | High power nano friction generator and preparation method thereof | |
| CN103395240B (en) | The preparation method of carbon nano-composite material and corresponding carbon nano-composite material | |
| TW201436311A (en) | Method of metallizing dielectric film | |
| WO2014169724A1 (en) | Wind friction nanogenerator | |
| Yang et al. | Remarkable output power enhancement of sliding-mode triboelectric nanogenerator through direct metal-to-metal contact with the ground | |
| Liu et al. | Ultra-fast charging–discharging planar on-chip micro-supercapacitors based on reduced graphene oxide films by modified liquid–air interface self-assembly | |
| WO2014117683A1 (en) | Slide-friction nanometer generator set and power generation device | |
| TWI603489B (en) | Solar cell | |
| US8871305B2 (en) | Methods for infusing one or more materials into nano-voids of nanoporous or nanostructured materials | |
| CN105803403A (en) | Electric actuating oxidized graphene/metal double-layer thin film and preparation method thereof | |
| Song et al. | Flexible, transparent and high-power triboelectric generator with asymmetric graphene/ITO electrodes | |
| Liang et al. | Advances of Strategies to Increase the Surface Charge Density of Triboelectric Nanogenerators: A Review | |
| KR102384264B1 (en) | Triboelectric generator and preparing method for the same | |
| KR101972091B1 (en) | Triboelectric nanogenerator and fabricating method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160206 Address after: 100871 Beijing, Haidian District, Peking University, red 3rd floor, 105 Patentee after: Science & Technology Development Deparatment, Peking University Address before: 100871 Zhongguancun the Summer Palace Road, Beijing, No. 5, No. Patentee before: Peking University |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20190709 Address after: 100871 No. 5 Summer Palace Road, Zhongguancun, Haidian District, Beijing Patentee after: Peking University Address before: 100871 Red Third Floor 105, Peking University Patentee before: Science & Technology Development Deparatment, Peking University |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151028 Termination date: 20190712 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |