CN103337556A - Method for cutting band gap wavelength and improving photodetector performance in lattice matching system - Google Patents
Method for cutting band gap wavelength and improving photodetector performance in lattice matching system Download PDFInfo
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Abstract
The invention relates to a method for cutting band gap wavelength and improving photodetector performance in a lattice matching system, The method comprises the following steps: adopting molecular beam epitaxy method or metal organic gas phase epitaxy method, developing lattice matched buffer layer, multiple light absorption layer and wide band gap cap layer on a substrate to obtain a photoelectric detector extensional structure; wherein conducting cut set to the band gap of the multiple light absorption layer in the developing process, and selecting broad-band gap under the premise of satisfying the requirement to the cutoff wavelength of the photoelectric detector long wave end in the application. The develop method provided by the invention is simple, by cutting and setting the band gap of the photoelectric detector multiple light absorption layer, the device performance can be remarkably improved under the premise of basically not change the original device design, and the detectivity is improved more than three times; the method is suitable for manufacturing different kinds of III-V race compound material system photoelectric detectors, and is also suitable for the manufacturing of other types of photoelectric devices and electric devices and expanding to other material system, thereby having a better application prospect.
Description
Technical field
The invention belongs to semiconductor photo detector epitaxial structure field, particularly a kind of lattice matching body is fastened the method that the cutting band gap wavelength improves the photodetector performance.
Background technology
Semiconductor photo detector generally belongs to the detector of quantum type, and the existing over one hundred year history of its invention can adopt various semi-conducting materials, in various fields important application is arranged.The structure of semiconductor photo detector has been developed into fine structure materials such as complicated heterojunction, quantum well, superlattice by simple body material, the wave-length coverage that relates to by in early days the narrow band of Visible-to-Near InfaRed be extended to entire ultraviolet, visible, near-infrared, in infrared and even far infrared band, material system also comprises VI, III-V, II-VI, IV-VI and organic compound etc., polytypes such as photoconduction, photovoltaic are also arranged, numerous, the modal photovoltaic type photodetector that is based on the pn knot.The pn junction type photodetector of typical employing III-V compound material generally is to make of epitaxy method on substrates such as InP, GaAs, GaSb, InAs at present, its basic structure comprises light absorbing zone and cap layer of a conductive buffer layer (but under the double as contact layer), low-doped (or involuntary doping), in the cap layer, can adopt extension in-situ doped, outside delay methods such as diffusing, doping or ion injection and form the pn knot.General cap layer is wished to adopt the wideer material in forbidden band to be beneficial to printing opacity and is improved device performance.
For improving the material growth quality, pay the utmost attention to the system of mating with substrate lattice in the selection of resilient coating, light absorbing zone and cap layer material, can improve device performance like this and avoid a series of because the difficulty that lattice mismatch causes.III-V family material InP and the InGaAs commonly used with the short-wave infrared wave band are example: the light absorbing zone of detector adopts the In with InP substrate lattice coupling
0.53Ga
0.47The As ternary system, resilient coating and cap layer can be used InP, also can mate In with the wideer lattice in forbidden band
0.52Al
0.48The As ternary system.In
0.53Ga
0.47The about 0.744eV of As ternary system material band gap at room temperature, the corresponding about 1.65 μ m of band gap wavelength, therefore the peak response wavelength of detector can reach about 1.6 μ m, and at the wave band of about 1-1.6 μ m smooth response is arranged, and its internal quantum efficiency can and remain unchanged substantially greater than 90% on this wave band.For the application that needs wide-band response, this characteristics with wide range flat response are very favourable, but because In
0.53Ga
0.47The band gap relative narrower of As material, the dark current of device can be higher, will reduce dark current in the practical application and can only lean on the reduction working temperature, brings difficulty for some application scenarios.Take the In on this wave band again
0.53Ga
0.47As detector and Si detector are done relatively individual: the cut-off wave of the about 1.12eV correspondence of the band gap of Si is about 1.1 μ m.For the light about the about 1 μ m of same detection, these two kinds of detectors can have identical quantum efficiency or photoresponse, and because the band gap of Si will be obviously greater than In
0.53Ga
0.47As, the dark current of Si detector will hang down several magnitudes, therefore has very significant advantage aspect systematic function.And for needing probing wave to be grown up in the light of the band gap wavelength of the Si light time as 1.3 μ m, the Si detector is just helpless.Yet notice that people do not need very wide spectral response under many application scenarios, for example: near the detection of steam wave band 1.36 μ m in the space remote sensing and the 1.12 μ m, the response spectrum width of about 0.1 μ m just is enough to meet the requirements; For another example: the centre wavelength of the light that the fluoroscopic examination of singlet oxygen need be surveyed in the medical science light treatment research is at 1.27 μ m, and the spectral bandwidth that needs is tens nanometers only, and obviously these can't adopt the Si detector in using.It is narrow to reduce interference also often to require the detecting light spectrum scope to try one's best in these application systems, this is realized with regard to needing methods such as use arrowband bandpass filter under the situation of using wide response spectrum detector, this has strengthened light loss consumption and system complex degree on the one hand, does not also give full play to the performance of device on the other hand.
Summary of the invention
Technical problem to be solved by this invention provides a kind of lattice matching body and fastens the method that the cutting band gap wavelength improves the photodetector performance, the growing method of this material is simple, set by the cutting to photodetector light absorbing zone band gap, under the prerequisite that does not change original designs substantially, significantly improve device performance, detectivity is improved more than 3 times, and material growth and device chip processing technology also remain unchanged substantially; Both be fit to the making of some different types of III-V compound material system photoelectric detectors, and also be fit to the making of the photoelectric device of other types and electronic device and be extended to the other materials system, had a good application prospect.
A kind of cutting band gap wavelength of the present invention improves the method for photodetector performance, comprising:
Adopt molecular beam epitaxy or gas phase epitaxy of metal organic compound method, the resilient coating, polynary system light absorbing zone and the broad stopband cap layer that mate at substrate growth lattice obtain the photoelectric detector epitaxial structure; Wherein, in the growth course band gap of polynary system light absorbing zone is carried out cutting and set, choose broad-band gap under the prerequisite that in satisfying application, photodetector long wave end cut-off wavelength is required.
Described band gap to the polynary system light absorbing zone is carried out cutting and is set, when light absorption layer material is quaternary system InAlGaAs, in application with the band gap of material by In
0.53Ga
0.47The 0.744eV of As adjusts to E
z, E
z=0.477 (1-z)+1.467z-0.22z (1-z), 0.744eV＜E
z＜1.467eV makes its cut-off wavelength be reduced to λ
z, λ
z=1.24/E
z, 0.845 μ m＜λ
z＜1.667 μ m, then the Al component increases to 0.48z by 0, and the Ga component is decreased to 0.47 (1-z) by 47%, and the component of In remains unchanged, and makes the component of quaternary system reach In
0.53Al
0.48zGa
0.47 (1-z)As.
Described band gap to the polynary system light absorbing zone is carried out cutting and is set, and when light absorption layer material is quaternary system InGaAsP, needs band gap with material by In in application
0.53Ga
0.47The 0.744eV of As adjusts to E
z, E
z=1.344-0.738z+0.138z
2, 0.744eV＜E
z＜1.344eV makes its cut-off wavelength be reduced to λ
z, λ
z=1.24/E
z, 0.923 μ m＜λ
z＜1.667 μ m, then the In component increases to 1-0.47z by 53%, and the Ga component is decreased to 0.47z by 47%, and the component of As is decreased to z by 100% simultaneously, and the component of P increases to 1-z by 0, makes the component of quaternary system reach In
1-0.47zGa
0.47zAs
zP
1-z
Band gap is a kind of physical characteristic of semi-conducting material, and there are not the possibility of being reduced in unary system (as Si, Ge etc.) and the definite binary system (as GaAs, InAs, InP etc.) of stoicheiometry.For ternary system (as InGaAs, InAlAs, GaAlAs etc.), quaternary system (as InGaAsP, AlInGaAs, InAsPSb etc.) and even five yuan were (as InAlAsPSb, InGaAsPSb etc.), its band gap really can component reduce by regulating.For example, InGaAs material for ternary system, its band gap just can be by regulating In and Ga proportioning (band gap of InAs is 0.36eV to regulating continuously between the 1.43eV at 0.36eV, the band gap of GaAs is 1.43eV), but its lattice constant also changes thereupon, can't keep constantly, other polynary system materials also are like this.For some specific multicomponent material systems, satisfy certain lattice constant and the prerequisite of remain unchanged (to be fit to the requirement of certain particular substrate material) under its band gap can also in certain scope, regulate.
Described method is not limited only to InP substrate and InAlGaAs or InGaAsP lattice matched materials system, also can be extended to other substrates and with its matched materials system.
Starting point of the present invention and advantage are: (1) some quaternary systems in III-V family lattice matched materials system can change band gap keeping under the constant situation of lattice constant, and in the material growth, adopt suitable strategy can make the growth of these quaternary materials comparatively convenient, thereby significantly do not increase the difficulty of material growth; (2) for devices such as photodetector, the band gap that increases material is conducive to reduce its intrinsic carrier concentration, thereby significantly reduce the dark current (leakage current) of device and improve its puncture voltage, improve device performance greatly, compare with the material that adopts narrow band gap like this, device just can have higher working temperature under the prerequisite that guarantees same performance, thereby reduces the complexity of system greatly.
Beneficial effect
(1) material growth method of the present invention is simple, set by the cutting to photodetector light absorbing zone band gap, significantly improve device performance under the prerequisite that does not change original designs substantially, detectivity is improved more than 3 times, and material growth and device chip processing technology also remain unchanged substantially;
(2) the present invention's long wave end cut-off wavelength of setting detector is conducive to improve the noiseproof feature of device, to the design of simplification system with to improve systematic function also very favourable;
(3) the present invention both had been fit to the making of some different types of III-V compound material system photoelectric detectors, also was fit to the making of the photoelectric device of other types and electronic device and was extended to the other materials system, had a good application prospect.
Description of drawings
Fig. 1 is enforcement schematic diagram of the present invention, and wherein, 1 is substrate, and 2 is resilient coating, and 3 is the polynary system light absorbing zone, and 4 is broad stopband cap layer.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
(1) adopt molecular beam epitaxy (MBE) to comprise the lattice coupling photodetector epitaxial structure of resilient coating, polynary system light absorbing zone and broad stopband cap layer in the growth of InP substrate.The InP substrate adopts semi-insulating conduction type; Resilient coating is selected the narrower In in forbidden band for use
0.53Ga
0.47As, thickness are 200 nanometers, and doping and concentration thereof are determined according to the final requirement of device; The polynary system light absorbing zone is involuntary doping, adopts the InAlGaAs of the quaternary system that its band gap cutting is set, and thickness is 1 micron; Broad stopband cap layer can be involuntary doping, and material is In
0.52Al
0.48As, thickness are 0.5 micron;
(2) the long wave cut-off function wavelength of the cutting set basis required device of the component of quaternary system InAlGaAs light absorbing zone and band gap requires to determine.With InP substrate lattice match condition under the InAlGaAs quaternary system can regard two lattices coupling ternary system In as
0.52Al
0.48As and In
0.53Ga
0.47The mixed crystal of As, its component can be expressed as (In
0.52Al
0.48As)
x(In
0.53Ga
0.47As)
y(x+y=1).For example: the band gap of the material that needs a person with the qualifications of a general under the prerequisite that keeps the lattice coupling is by In
0.53Ga
0.47The 0.744eV of As adjusts to 0.85eV makes its cut-off wavelength be reduced to 1.46 μ m, and then the Al component needs to be increased to 5% by 0, and the Ga component reduces 5% to 42%, In component by 47% and remains unchanged substantially simultaneously, even the component of quaternary system reaches In
0.53Al
0.05Ga
0.42As is equivalent to x=0.104, y=0.896, and the dark current of device can reduce one more than the magnitude in the case, and detectivity is improved more than 3 times;
(3) with MBE method growth In
0.53Al
0.08Ga
0.39During the As light absorbing zone, consider that Al and Ga have close sticking coefficient in growth, so its growth parameter(s) still can be by the In of growth lattice coupling
0.52Al
0.48As and In
0.53Ga
0.47The growth conditions of As ternary system is tentatively definite, and the line condition of namely keeping In and As is constant, the Al line is reduced to the In of growth lattice coupling
0.52Al
0.48During As 10.4% is reduced to the Ga line In that the growth lattice mates simultaneously
0.53Ga
0.47During As 89.6%, can keep the lattice-matched growth condition like this and keep growth rate and V/III parameter such as to compare constant substantially, final growth conditions can be finely tuned according to the test of X-ray lattice parameter again.
(1) adopt gas phase epitaxy of metal organic compound MOVPE method to comprise the lattice coupling photodetector epitaxial structure of resilient coating, polynary system light absorbing zone and broad stopband cap layer in the growth of InP substrate.The InP substrate adopts the highly doped conduction type of N-type; Resilient coating selects for use the InP material to advance the light requirement to be fit to the back side, and thickness is 2000 nanometers, and doping and concentration thereof also can be determined according to the final requirement of device; The polynary system light absorbing zone is low-doped n type, adopts the InGaAsP of the quaternary system that its band gap cutting is set, and thickness is 3 microns; Broad stopband cap layer is for being highly doped p-type, and material is InP, and thickness is 1 micron;
(2) the long wave cut-off function wavelength of the cutting set basis required device of the component of quaternary system InGaAsP light absorbing zone and band gap requires to determine.With InP substrate lattice match condition under the InGaAsP quaternary system can regard binary system InP and lattice coupling ternary system In as
0.53Ga
0.47The mixed crystal of As, its component can be expressed as (InP)
x(In
0.53Ga
0.47As)
y(x+y=1).For example: the band gap of the material that needs a person with the qualifications of a general under the prerequisite that keeps the lattice coupling is by In
0.53Ga
0.47The 0.744eV of As adjusts to 0.85eV makes its cut-off wavelength be reduced to 1.46 μ m, then the In component needs to increase by 18% to 71% by 53%, the Ga component reduces 18% to 29% by 47%, and the P component of the As component of corresponding minimizing 38% simultaneously and introducing 38% makes the component of quaternary system reach In
0.71Ga
0.29As
0.62P
0.38, be equivalent to x=0.38, y=0.62, the dark current of device can reduce one more than the magnitude in the case, and detectivity is improved more than 3 times;
(3) with MOVPE method growth In
0.71Ga
0.29As
0.62P
0.38During light absorbing zone, the growth source flow parameter of In, Ga, As and P need be with reference to InP and In
0.53Ga
0.47The growth parameter(s) adjusted in concert of As to be reaching the component that sets, and keep suitable V/III than and growth rate.Final growth conditions can be finely tuned according to the test of X-ray lattice parameter again.
What need further specify is, the present invention need adopt the high-quality of lattice matched materials system growth material to guarantee, by previous embodiments as seen, adopts its subsequent technique of device of this quaternary system light absorbing zone can be identical.In addition, this kind scheme not only is fit to unit or the array device that light is advanced in the front, also is suitable for adopting the back side of back-off encapsulation to advance light unit or array device, and implementation is quite flexible.
Claims (3)
1. a lattice matching body is fastened the method that the cutting band gap wavelength improves the photodetector performance, comprising:
Adopt molecular beam epitaxy or gas phase epitaxy of metal organic compound method, the resilient coating, polynary system light absorbing zone and the broad stopband cap layer that mate at substrate growth lattice obtain the photoelectric detector epitaxial structure; Wherein, in the growth course band gap of polynary system light absorbing zone is carried out cutting and set, choose broad-band gap under the prerequisite that in satisfying application, photodetector long wave end cut-off wavelength is required.
2. a kind of lattice matching body according to claim 1 is fastened the method that the cutting band gap wavelength improves the photodetector performance, it is characterized in that: described band gap to the polynary system light absorbing zone is carried out cutting and is set, when light absorption layer material is quaternary system InAlGaAs, in application with the band gap of material by In
0.53Ga
0.47The 0.744eV of As adjusts to E
z, E
z=0.477 (1-z)+1.467z-0.22z (1-z), 0.744eV＜E
z＜1.467eV makes its cut-off wavelength be reduced to λ
z, λ
z=1.24/E
z, 0.845 μ m＜λ
z＜1.667 μ m, then the Al component increases to 0.48z by 0, and the Ga component is decreased to 0.47 (1-z) by 47%, and the component of In remains unchanged, and makes the component of quaternary system reach In
0.53Al
0.48zGa
0.47 (1-z)As.
3. a kind of lattice matching body according to claim 1 is fastened the method that the cutting band gap wavelength improves the photodetector performance, it is characterized in that: described band gap to the polynary system light absorbing zone is carried out cutting and is set, when light absorption layer material is quaternary system InGaAsP, in application, need band gap with material by In
0.53Ga
0.47The 0.744eV of As adjusts to E
z, E
z=1.344-0.738z+0.138z
2, 0.744eV＜E
z＜1.344eV makes its cut-off wavelength be reduced to λ
z, λ
z=1.24/E
z, 0.923 μ m＜λ
z＜1.667 μ m, then the In component increases to 1-0.47z by 53%, and the Ga component is decreased to 0.47z by 47%, and the component of As is decreased to z by 100% simultaneously, and the component of P increases to 1-z by 0, makes the component of quaternary system reach In
1-0.47zGa
0.47zAs
zP
1-z
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Cited By (4)
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| CN110164995A (en) * | 2019-04-29 | 2019-08-23 | 中国电子科技集团公司第三十八研究所 | Low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof |
| CN111785746A (en) * | 2020-07-13 | 2020-10-16 | 中国科学技术大学 | Multi-channel high-speed detector chip |
| CN112567214A (en) * | 2018-08-14 | 2021-03-26 | 莱比锡大学 | Device and method for determining the wavelength of radiation |
| CN115000212A (en) * | 2022-06-13 | 2022-09-02 | 河南大学 | Two-dimensional direct band gap semiconductor detector and preparation method thereof |
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Application publication date: 20131002 |