CN103337452A - 在硅锗层上形成镍自对准硅化物的工艺方法 - Google Patents
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 56
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000000137 annealing Methods 0.000 claims abstract description 33
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000005280 amorphization Methods 0.000 claims abstract description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 42
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 42
- 150000002500 ions Chemical class 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 6
- 206010058109 Hangnail Diseases 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Abstract
本发明提供了一种在硅锗层上形成镍自对准硅化物的工艺方法,包括:形成有栅极以及硅锗源/漏级的半导体衬底,在硅锗层上外延一层硅,对外延硅层进行非晶化处理,在外延硅层上沉积镍铂层,第一次快速退火,湿法去除未反应的镍之后进行第二次快速退火。通过在硅锗层上形成一层外延硅层,用外延硅层代替硅锗层与镍铂反应生成镍自对准硅化物,降低工艺的退火温度,提高薄膜的膜质均匀性,同时所成薄膜电阻降低减小了器件的功耗。
Description
技术领域
本发明涉及半导体集成电路及其制造领域,特别涉及一种在硅锗层上形成镍自对准硅化物的工艺方法。
背景技术
镍自对准硅化物(Ni-salicide)工艺既可以有效降低源漏栅区导通电阻,又可以降低这些区域的接触电阻,已成为COMS生产流程的重要环节。通常,Ni-salicide由镍铂(NiPt)与硅(Si)衬底反应而成,具有反应温度低,形成的Ni-salicide电阻低,膜质均匀等优点。在NiPt与Si层进行快速退火后,由于Si独有的晶体结构,形成的Ni-salicide可能会沿着Si周期性晶格的特定方向生长,形成倒刺型结构,这会导致器件短路的发生,从而造成器件失效,Si层非晶化的工艺通过打乱Si的晶格结构,有效的防止这一现象的发生。
近年来,由于硅锗(SiGe)衬底的高空穴迁移率等优点,被广泛的应用在p-MOSFET的源漏极,在SiGe层形成Ni-salicide的步骤通常如图1a-1c所示。图1a为一形成有硅锗源/漏极101和102以及栅极103的半导体衬底;参考图1b,在硅锗层上沉积镍铂层104;之后进行第一次退火,所述硅锗层101和102与镍铂层104反应生成Ni-salicide,湿法去除未反应的金属后进行第二次退火,形成最终的镍自对准硅化物,如图1c所示。
尽管SiGe层的引入提高了器件的性能,但是它与NiPt形成Ni-salicide的条件与Si层形成Ni-salicide的条件不同,如在Si层生长Ni-salicide第一次退火的温度在280℃-300℃,在湿法去除未反应金属后,进行第二次退火,温度为500℃;在SiGe层生长Ni-salicide第一次退火的温度在300℃-350℃,湿法去除未反应金属后第二次退火的温度为500℃。第一次退火的温度差可以达到20℃-50℃。另外,SiGe与NiPt和Si与NiPt形成的Ni-salicide方块电阻阻值差别可以达到50%,对于镍硅化物(NiSi)电阻是12欧姆/方块,镍硅锗化物(NiSiGe)则为8欧姆/方块。特别的,SiGe与NiPt形成的Ni-salicide膜在退火后还会有结块,Ge扩散至膜表面等现象,导致薄膜的均匀性大大降低,使器件的电学性能变差。
发明内容
本发明的目的在于提供一种在硅锗层上形成镍自对准硅化物的工艺方法,从而降低工艺的退火温度,避免在硅锗层上形成的镍自对准硅化物在退火后结块或锗扩散至表面导致的膜质不均匀等现象。
本发明的技术方案是一种在硅锗层上形成镍自对准硅化物的工艺方法,包括以下步骤:
提供一半导体衬底,所述半导体衬底上形成有栅极以及硅锗源/漏级;
在硅锗层上外延一层硅;
对外延硅层进行非晶化处理;
在外延硅层上沉积镍铂层;
对外延硅层和镍铂层进行第一次快速退火;
湿法去除未反应的镍;
对外延硅层和镍铂层进行第二次快速退火。
进一步的,所述非晶化处理采用的材料为硅、锗或硅和锗的混合物。
进一步的,所述非晶化处理采用选择性离子注入方法。
进一步的,所述选择性离子注入方法注入的能量为5Kev~50Kev,离子流剂量为1.0×1013/厘米2~1.0×1016/厘米2。
进一步的,所述选择性离子注入方法注入的能量为5Kev~50Kev,离子流剂量为1.0×1014/厘米2~1.0×1016/厘米2。
进一步的,所述选择性离子注入方法注入的能量为5Kev~50Kev,离子流剂量为1.0×1013/厘米2~1.0×1016/厘米2。
进一步的,所述第一次快速退火的温度为280℃~320℃。
进一步的,所述第二次快速退火的温度为500℃。
与现有技术相比,本发明具有以下优点:
1、本发明通过在硅锗层上形成一层外延硅层,用外延硅层代替硅锗层与镍铂反应生成镍自对准硅化物,降低工艺的退火温度,降低了工艺制作成本同时增大工艺窗口,并且避免镍自对准硅化物膜在退火后产生结块或锗扩散至膜表面等现象,提高镍自对准硅化物膜的均匀性,从而保证器件的电学性能;
2、与硅锗层和镍铂反应的现有技术相比,外延硅层和镍铂反应生成的镍自对准硅化物的电阻更低,降低了器件的功耗;
3、本发明采用的非晶化技术打乱了硅的晶格结构,使得生成的镍自对准硅化物膜层更加均匀,杜绝了倒刺结构的发生,从而避免器件的短路,增加了器件的可靠性。
附图说明
图1a~1c为现有技术中在硅锗层上形成镍自对准硅化物的结构示意图。
图2为本发明一实施例中在硅锗层上形成镍自对准硅化物的制作过程流程图。
图3a~3e为本发明一实施例中在硅锗层上形成镍自对准硅化物的结构示意图。
具体实施方式
为使本发明的内容更加清楚易懂,以下结合说明书附图,对本发明的内容做进一步说明。当然本发明并不局限于该具体实施例,本领域的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。
其次,本发明利用示意图进行了详细的表述,在详述本发明实例时,为了便于说明,示意图不依照一般比例局部放大,不应对此作为本发明的限定。
本发明的核心思想是:通过用外延硅层代替硅锗层与镍铂反应生成镍自对准硅化物,降低了工艺的退火温度,避免镍自对准硅化物膜在退火后产生结块或锗扩散至膜表面等现象,提高镍自对准硅化物膜的均匀性,从而保证器件的电学性能,同时通过降低电阻减小了器件的功耗。
图2为本发明一实施例中在硅锗层上形成镍自对准硅化物的制作过程流程图,如图2所示,本发明提出一种在硅锗层上形成镍自对准硅化物的工艺方法,包括以下步骤:
步骤S01:提供一半导体衬底,所述半导体衬底上形成有栅极以及硅锗源/漏级;
步骤S02:在硅锗层上外延一层硅;
步骤S03:对外延硅层进行非晶化处理;
步骤S04:在外延硅层上沉积镍铂层;
步骤S05:对外延硅层和镍铂层进行第一次快速退火;
步骤S06:湿法去除未反应的镍;
步骤S07:对外延硅层和镍铂层进行第二次快速退火。
图3a~3e为本发明一实施例中在硅锗层上形成镍自对准硅化物的结构示意图,请参考图2所示,并结合图3a~图3e,详细说明本发明提出的在硅锗层上形成镍自对准硅化物的工艺方法:
在步骤S01中,按照现有工艺在半导体衬底上形成栅极203以及硅锗源/漏极201和202,如图3a所示。
在步骤S03中,使用硅、锗或硅和锗的混合物作为注入材料,运用选择性离子注入的方法对外延硅204和栅极203进行非晶化处理,如图3c所示。非晶化处理打乱硅层204的晶格结构,防止形成的镍自对准硅化物沿着硅周期性晶格的特定方向成长。本实施例中注入能量为5Kev~50Kev,例如10Kev,20Kev,30Kev,40Kev,50Kev,其中较佳的能量为25Kev;离子流剂量为1.0×1013/厘米2~1.0×1016/厘米2,例如1.0×1013/厘米2,1.0×1014/厘米2,1.0×1015/厘米2,1.0×1016/厘米2,其中较佳的离子流剂量为1.0×1015/厘米2。
在步骤S04中,在外延硅层204与栅极203上沉积镍铂层205,形成如图3d所示的结构。通过控制镍铂层205与硅层204的厚度,使镍铂层205与硅层204完全反应,不影响到硅锗层201和202。本实施例中,所述镍铂层205的厚度为例如其中较佳的厚度为
在步骤S05中,第一次快速退火使镍铂与硅反应生成镍自对准硅化物。第一次快速退火的温度为280℃~320℃。
在步骤S06中,湿法去除未反应的镍。
在步骤S07中,进行第二次快速退火,最终形成镍自对准硅化物,如图3e所示。第二次快速退火的温度为500℃。
在本发明所提供的在硅锗层上形成镍自对准硅化物的工艺方法中,较佳的,所述硅层204与镍铂层205正好反应,无硅或镍铂层残留,从而不影响硅锗层201和202,可以通过调节工艺参数,如硅层204与镍铂层205的厚度、非晶化处理中注入的能量以及离子流剂量等来达到上述目的,因此在本发明的其他实施例中,可以选择不同的工艺参数:例如:所述外延硅层的厚度为所述非晶化处理注入的能量为5Kev~50Kev,离子流剂量为1.0×1013/厘米2~1.0×1016/厘米2;或者,所述外延硅层的厚度为所述非晶化处理注入的能量为5Kev~50Kev,离子流剂量为1.0×1014/厘米2~1.0×1016/厘米2。
综上所述,本发明通过在硅锗层上形成一层外延硅层,用外延硅层代替硅锗层与镍铂反应生成镍自对准硅化物,降低工艺的退火温度,降低了工艺制作成本同时增大工艺窗口,并且避免镍自对准硅化物膜在退火后产生结块或锗扩散至膜表面等现象,提高镍自对准硅化物膜的均匀性,从而保证器件的电学性能;与硅锗层和镍铂反应的现有技术相比,外延硅层和镍铂反应生成的镍自对准硅化物的电阻更低,降低了器件的功耗;本发明采用的非晶化技术打乱了硅的晶格结构,使得生成的镍自对准硅化物膜层更加均匀,杜绝了倒刺结构的发生,从而避免器件的短路,增加了器件的可靠性。
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。
Claims (11)
1.一种在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,包括以下步骤:
提供一半导体衬底,所述半导体衬底上形成有栅极以及硅锗源/漏级;
在硅锗层上外延一层硅;
对外延硅层进行非晶化处理;
在外延硅层上沉积镍铂层;
对外延硅层和镍铂层进行第一次快速退火;
湿法去除未反应的镍;
对外延硅层和镍铂层进行第二次快速退火。
2.如权利要求1所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述非晶化处理采用的材料为硅、锗或硅和锗的混合物。
3.如权利要求1所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述非晶化处理采用选择性离子注入方法。
5.如权利要求4所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述选择性离子注入方法注入的能量为5Kev~50Kev,离子流剂量为1.0×1013/厘米2~1.0×1016/厘米2。
6.如权利要求4所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述选择性离子注入方法注入的能量为5Kev~50Kev,离子流剂量为1.0×1014/厘米2~1.0×1016/厘米2。
8.如权利要求7所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述选择性离子注入方法注入的能量为5Kev~50Kev,离子流剂量为1.0×1013/厘米2~1.0×1016/厘米2。
10.如权利要求1所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述第一次快速退火的温度为280℃~320℃。
11.如权利要求1到10中任意一项所述的在硅锗层上形成镍自对准硅化物的工艺方法,其特征在于,所述第二次快速退火的温度为500℃。
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