CN103323796B - A kind of MTJ magnetic field sensor using Graphene as barrier layer - Google Patents
A kind of MTJ magnetic field sensor using Graphene as barrier layer Download PDFInfo
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- CN103323796B CN103323796B CN201310247035.0A CN201310247035A CN103323796B CN 103323796 B CN103323796 B CN 103323796B CN 201310247035 A CN201310247035 A CN 201310247035A CN 103323796 B CN103323796 B CN 103323796B
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Abstract
The invention discloses a kind of MTJ magnetic field sensor using Graphene as barrier layer, comprise two magnetic line of force collectors, be used for forming four MTJ magnet-sensitive elements of Hui Sitong measuring bridge, four electrodes and substrate, two magnetic line of force collectors symmetrically shape layout, the gap location of two described MTJ magnet-sensitive elements between two magnetic line of force collectors, described in two other, MTJ magnet-sensitive element lays respectively at the bottom of two magnetic line of force collectors, each described MTJ magnet-sensitive element includes the substrate stacking gradually arrangement from the bottom to top, bottom electrode layer, first cushion, free ferromagnetic, Graphene barrier layer, pinned ferromagnetic layer, pinning layer, second cushion and top electrode layer.The present invention have simple and compact for structure, volume is little, with low cost, easy to make, there is the advantages such as high resolution.
Description
Technical field
The present invention is mainly concerned with feeble signal field of sensing technologies, refers in particular to a kind of MTJ magnetic field sensor using Graphene as barrier layer.
Background technology
Weak magnetic measurement is widely used in military affairs and the national economy fields such as target detection, earth-magnetic navigation, magnetic store, geologic prospecting, biomedicine.Sensor type for weak magnetic fields measurement in prior art is more, mainly comprise fluxgate sensor, optical pumping formula Magnetic Sensor, proton formula Magnetic Sensor, optical fiber Magnetic Sensor, giant magnetic impedance Magnetic Sensor, AMR(Anisotropic Magnetoresistive, anisotropic magnetoresistive) Magnetic Sensor, GMR(Giant Magnetoresistive, giant magnetoresistance) Magnetic Sensor, MTJ(Magnetic Tunnel Junction, magnetic tunnel-junction) Magnetic Sensor etc.Wherein AMR, GMR and MTJ Magnetic Sensor are that the Magnetic Sensor comparing other types obviously has the features such as volume is little, low in energy consumption, easy batch production.But be that the Magnetic Sensor of sensitive element needs to arrange set/reset coil and presets-reset operation to it when using with AMR, cause the complexity of its manufacturing process, while being arranged on of loop construction increases size, too increase power consumption.And be even symmetry with the Magnetic Sensor response curve that multilayer film GMR is sensitive element, the magnetic field size that can only measure, can not reflect the direction in magnetic field.MTJ element utilizes tunneling magnetoresistance (the Tunnel Magnetoresistance of Researches for Magnetic Multilayer Films, TMR) magnetic field is responded to, than the AMR element and GMR element that find also practical application before, there is larger resistance change rate, higher sensitivity and better temperature stability.
Julliere in 1975 observe in Fe/Ge/Co tunnel junction when two ferromagnetic layer direction of magnetization are parallel or antiparallel time, tunnel junction will have different resistance value (Julliere M. Tunneling Between Ferromagnetic Films. Phys Lett A, 1975,54 (3): 225-226).Thisly cause the phenomenon of its resistance variations because external magnetic field changes the magnetized state of tunnel junction ferromagnetic layer, be called magnetic tunnel-junction effect.Change rate of magnetic reluctance under Fe/Ge/Co tunnel junction low temperature is up to 14%, but at room temperature very little.In more than 30 year subsequently, people have carried out serial further investigation to MTJ.Nineteen ninety-five Miyazaki group achieves breakthrough (Miyazki T, the Tezuka N. Giant magnetic tunneling effect in Fe/Al of magnetic tunnel-junction research
2o
3/ Fe junction. J. Magn. Magn. Mater., 1995,139:L231), first at Fe/Al
2o
3find in/Fe tunnel junction that change rate of magnetic reluctance under the special magnetic field of room temperature and a few milli is up to 15.6%, higher under low temperature, be about 23%.2008, under MgO base MTJ change rate of magnetic reluctance at room temperature prepared by S. Ikeda etc. reaches 604%, 5K low temperature, then reach 1144%(S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M.Tsunoda, F. Matsukura, and H. Ohno, Appl. Phys. Lett.2008,93:082508), the experimental result of this record is close to the theoretical expectation values of MgO base MTJ.
Inst. of Physics, CAS applies for a kind of magnetic tunnel junction element national inventing patent (application number: 200410030893.0) being ferromagnetic electrode with compound iron magnetosphere for 2004, by regulating the thickness of the thin ferromagnetic layer in compound iron magnetosphere can the spin polarizability of continuously adjustabe compound iron magnetosphere, thus the tunnel magneto resistance value of this element can be regulated and controled; By regulating the thickness as thin ferromagnetic layer in the compound iron magnetosphere of free layer can the coercive force of this free layer of continuous setup, thus the quick closing valve field size of this element can be regulated.This MTJ element can be applicable to magnetic RAM, but is not suitable for the accurate measurement to Weak magentic-field.
The people such as Xia Li have applied for a kind of mtj structure patent (patent No.: US20110044096A1) for 2009, and this MTJ is made up of bottom electrode, fixed bed, tunnel barrier layer, free layer and top layer electrode.Jason Reid etc. has applied for a kind of patent (patent No.: US20110108937A1) comprising the mtj structure of thermal barrier coatings for 2009, and comparing traditional mtj structure has switching speed faster, has better compatibility with standard semiconductor manufacture process.Xiaohua Lou etc. has applied for that one is staggered MTJ patent (patent No.: US20110026320A1, US008203874B2) for 2010.But MTJ sensitive element is used for weak magnetic fields measurement in these existing technical schemes, measurement resolution and precision need to improve further.
Make a general survey of the development course of the decades of MTJ, the development of middle barrier layer to magnetic tunnel-junction has very important impetus, and barrier layer is from early stage Ge to Al
2o
3, then to MgO, when ferromagnetic layer is substantially constant, the approximate exponentially level of change rate of magnetic reluctance of magnetic tunnel-junction improves, and this rule of development excites people to the concern of barrier layer and research.In addition, researchist finds when analysis of magnetic tunnel junction noisiness: the defects such as the inconsistency that barrier layer exists in preparation process, pin hole can produce 1/f noise, thus limit the low frequency magnetic field measurement capability of MTJ Magnetic Sensor.
Summary of the invention
The technical problem to be solved in the present invention is just: the technical matters existed for prior art, the invention provides a kind of simple and compact for structure, volume is little, with low cost, easy to make, the employing Graphene with high resolution is as the MTJ magnetic field sensor of barrier layer.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of MTJ magnetic field sensor using Graphene as barrier layer, comprise two magnetic line of force collectors, be used for forming four MTJ magnet-sensitive elements of Hui Sitong measuring bridge, four electrodes and substrate, two magnetic line of force collectors symmetrically shape layout, the gap location of two described MTJ magnet-sensitive elements between two magnetic line of force collectors, described in two other, MTJ magnet-sensitive element lays respectively at the bottom of two magnetic line of force collectors, each described MTJ magnet-sensitive element includes the substrate stacking gradually arrangement from the bottom to top, bottom electrode layer, first cushion, free ferromagnetic, Graphene barrier layer, pinned ferromagnetic layer, pinning layer, second cushion and top electrode layer.
As a further improvement on the present invention:
Described Graphene barrier layer is single-layer graphene or multi-layer graphene.
The number of plies of described Graphene barrier layer be greater than 1 odd number.
Described Graphene is directly prepared on free ferromagnetic by chemical vapour deposition technique and forms Graphene barrier layer.
Described Graphene is transferred on free ferromagnetic after being prepared by oxidation-reduction method or organic synthesis method.
Compared with prior art, the invention has the advantages that: the present invention is using Graphene as the barrier layer of MTJ to manufacture magnetic field sensor, because Graphene has fabulous spin transport ability, graphene-based MTJ is made to have higher change rate of magnetic reluctance, thus improve magnetic-field measurement sensitivity, in addition there is the advantages such as low-frequency noise is low, volume is little, low in energy consumption simultaneously, and sensor one-piece construction is simple, easily manufactured, effectively can reduce the cost of manufacture of Magnetic Sensor.
Accompanying drawing explanation
Fig. 1 is the MTJ magnet-sensitive element schematic cross-section using Graphene as barrier layer in the present invention.
Fig. 2 is the MTJ magnetic field sensor structure using Graphene as barrier layer in the present invention.
Fig. 3 is the MTJ magnetic field sensor measuring principle schematic diagram using Graphene as barrier layer in the present invention.
Marginal data:
1, substrate; 2, bottom electrode layer; 3, the first cushion; 4, free ferromagnetic; 5, Graphene barrier layer; 6, pinned ferromagnetic layer; 7, pinning layer; 8, the second cushion; 9, top electrode layer; 1201, the first magnetic line of force collector; 1202, the second magnetic line of force collector; 1301, a MTJ magnet-sensitive element; 1302, the 2nd MTJ magnet-sensitive element; 1303, the 3rd MTJ magnet-sensitive element; 1304, the 4th MTJ magnet-sensitive element; 1401, the first electrode; 1402, the second electrode; 1403, the 3rd electrode; 1404, the 4th electrode.
Embodiment
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
As shown in Figure 1, MTJ magnetic field sensor using Graphene as barrier layer of the present invention, comprise stack gradually arrangement from the bottom to top substrate 1, bottom electrode layer 2, first cushion 3, free ferromagnetic 4, Graphene barrier layer 5, pinned ferromagnetic layer 6, pinning layer 7, second cushion 8, top electrode layer 9.In such an embodiment, free ferromagnetic 4 is free magnetic layer, and its magnetic moment direction A changes with the change of external magnetic field; Pinned ferromagnetic layer 6 is fixed magnetic layers, because its magnetic moment direction B nailed layer 7 is fixed on a direction, under general condition can not change.The resistance value of MTJ magnet-sensitive element is exactly the resistance value between bottom electrode layer 2 and top electrode layer 9, and when the magnetic moment direction B of magnetic moment direction A and the pinned ferromagnetic layer 6 of free ferromagnetic 4 is forward parallel, MTJ magnet-sensitive element is low resistance state; When the magnetic moment direction A of the free ferromagnetic 4 and magnetic moment direction B of pinned ferromagnetic layer 6 is antiparallel, MTJ magnet-sensitive element is high-resistance state, and the resistance of MTJ magnet-sensitive element is along with measurement magnetic field linear change between high-impedance state and low resistance state.
In a particular embodiment, substrate 1 usually select silicon, quartz, glass or other can the integrated any material of wafer, silicon process technology is ripe and owing to being easy to processing, therefore for integrated circuit becomes best selection.Bottom electrode layer 2 and top electrode layer 9 adopt non-magnetic conductive material usually, such as copper, aluminium, gold, silver etc., can by the preparation of the technique such as evaporation, magnetron sputtering on the base 1.The material of the first cushion 3 and the second cushion 8 generally can select tantalum, and prepares by magnetron sputtering technique.Free ferromagnetic 4 and pinned ferromagnetic layer 6 all select ferrimagnet, as iron, nickel, cobalt or their alloy material, also prepare by magnetron sputtering technique.Graphene barrier layer 5 is single-layer graphene or the multilayer Graphene such as (be generally 3,5,7 odd-level), Graphene directly can be prepared on free ferromagnetic 4 by chemical vapour deposition technique, or is transferred on free ferromagnetic 4 after preparing by other method oxidation-reduction method, organic synthesis method.Pinning layer 7 selects retentive material to prepare.
As shown in Figure 2, for the MTJ magnetic field sensor of the present invention using Graphene as barrier layer, comprise magnetic line of force collector, be used for forming four MTJ magnet-sensitive elements (i.e. a MTJ magnet-sensitive element 1301, the 2nd MTJ magnet-sensitive element 1302, the 3rd MTJ magnet-sensitive element 1303, the 4th MTJ magnet-sensitive element 1304) of Hui Sitong measuring bridge, four electrodes (i.e. the first electrode 1401, second electrode 1402, the 3rd electrode 1403, the 4th electrode 1404) and substrate 1.Magnetic line of force collector is for amplifying outside tested magnetic field, magnetic line of force collector comprises the first magnetic line of force collector 1201 and the second magnetic line of force collector 1202, first magnetic line of force collector 1201 and the second magnetic line of force collector 1202 symmetrically shape are arranged, its shape is not limited only to the rectangle in figure, and length direction is consistent with sensor magnetic field sensitive direction C; Gap is left between first magnetic line of force collector 1201 and the second magnetic line of force collector 1202.Magnetic line of force collector can adopt soft magnetic material to prepare according to actual needs.Four MTJ magnet-sensitive elements constitute a Hui Sitong measuring bridge, a wherein MTJ magnet-sensitive element 1301, the gap location of the 2nd MTJ magnet-sensitive element 1302 between the first magnetic line of force collector 1201 and the second magnetic line of force collector 1202, be used for respond to amplify after magnetic field, its resistance value changes with tested magnetic field, is sensitive measurement resistance.3rd MTJ magnet-sensitive element 1303, the 4th MTJ magnet-sensitive element 1304 lay respectively at the bottom of the first magnetic line of force collector 1201 and the second magnetic line of force collector 1202, and their resistance value, not by the impact in tested magnetic field, is reference resistance.Four electrodes are for connecting four graphene-based MTJ magnet-sensitive elements, and shape and the position of electrode are not limited to shown in figure, as long as electrode is positioned at substrate 1 edge.On the packaging pin that four electrodes of this magnetic field sensor can be connected to encapsulating package lead frame by lead-in wire or ASIC(Application Specific Integrated Circuit, special IC).
As shown in Figure 3, be the measuring principle schematic diagram of the present invention in embody rule example.Four MTJ magnet-sensitive elements (i.e. a MTJ magnet-sensitive element 1301, the 2nd MTJ magnet-sensitive element 1302, the 3rd MTJ magnet-sensitive element 1303, the 4th MTJ magnet-sensitive element 1304) constitute a Hui Sitong full-bridge, wherein a MTJ magnet-sensitive element 1301 is identical with the sensitive direction of the 2nd MTJ magnet-sensitive element 1302, and its resistance value is along with tested changes of magnetic field, the 3rd MTJ magnet-sensitive element 1303 and the 4th MTJ magnet-sensitive element 1304 are reference resistance.In the ideal case, when external magnetic field is zero, the resistance value of these four sensitive elements is equal, and at this moment bridge output voltage is zero.Voltage difference between 3rd electrode 1403 and the first electrode 1401 (
vout1-
vout2) be output voltage
vout, it and externally measured magnetic field are linear.
Above-mentioned bridge type Magnetic Sensor can adopt identical technique preparation in same substrate 1, and use as one chip Magnetic Sensor, its electrode can be connected on the packaging pin of ASIC or encapsulating package lead frame.
Below be only the preferred embodiment of the present invention, protection scope of the present invention be not only confined to above-described embodiment, all technical schemes belonged under thinking of the present invention all belong to protection scope of the present invention.It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, should be considered as protection scope of the present invention.
Claims (5)
1. the MTJ magnetic field sensor using Graphene as barrier layer, it is characterized in that, comprise two magnetic line of force collectors, be used for forming four MTJ magnet-sensitive elements of Hui Sitong measuring bridge, four electrodes and substrate, two magnetic line of force collectors symmetrically shape layout, the gap location of two described MTJ magnet-sensitive elements between two magnetic line of force collectors, described in two other, MTJ magnet-sensitive element lays respectively at the bottom of two magnetic line of force collectors, each described MTJ magnet-sensitive element includes the substrate stacking gradually arrangement from the bottom to top, bottom electrode layer, first cushion, free ferromagnetic, Graphene barrier layer, pinned ferromagnetic layer, pinning layer, second cushion and top electrode layer.
2. the MTJ magnetic field sensor using Graphene as barrier layer according to claim 1, is characterized in that, described Graphene barrier layer is single-layer graphene or multi-layer graphene.
3. the MTJ magnetic field sensor using Graphene as barrier layer according to claim 2, is characterized in that, when described Graphene barrier layer is multi-layer graphene, the number of plies of described Graphene barrier layer be greater than 1 odd number.
4. the MTJ magnetic field sensor using Graphene as barrier layer according to claim 2, is characterized in that, described Graphene is directly prepared on free ferromagnetic by chemical vapour deposition technique and forms Graphene barrier layer.
5. the MTJ magnetic field sensor using Graphene as barrier layer according to claim 2, is characterized in that, described Graphene is transferred on free ferromagnetic after being prepared by oxidation-reduction method or organic synthesis method.
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6586094B2 (en) | 2013-12-27 | 2019-10-02 | ナショナル ユニバーシティ オブ シンガポール | Graphene magnetoresistive sensor |
| CN104751861A (en) * | 2013-12-30 | 2015-07-01 | 福建省辉锐材料科技有限公司 | Preparation method of magnetic storage device |
| CN103792501B (en) * | 2014-01-22 | 2016-03-30 | 中国人民解放军国防科学技术大学 | The graphene-based Magnetic Sensor of a kind of bridge connected |
| CN105572609B (en) * | 2015-12-18 | 2018-09-25 | 中国人民解放军国防科学技术大学 | A kind of more iron inhomogeneous magnetic fields sensors and range adjusting method of range-adjustable |
| KR20170080741A (en) * | 2015-12-30 | 2017-07-11 | 에스케이하이닉스 주식회사 | Electronic device |
| CN106711323A (en) * | 2016-12-20 | 2017-05-24 | 清华大学 | Magnetic heterostructure magnetic tunnel junction adopting two-dimensional material |
| CN109962157B (en) * | 2017-12-25 | 2022-08-12 | 中国人民解放军国防科技大学 | Spinning electronic device and preparation method thereof |
| CN109738838B (en) * | 2019-01-22 | 2023-12-15 | 珠海多创科技有限公司 | TMR sensor, preparation method thereof and resistance value adjusting method |
| CN110579726A (en) * | 2019-10-15 | 2019-12-17 | 哈尔滨理工大学 | Spr-based high-sensitivity magnetic field sensing device |
| CN111647942B (en) * | 2020-05-26 | 2022-10-11 | 中国人民解放军国防科技大学 | Ferromagnetic/graphene/ferromagnetic hetero-epitaxial film and preparation method thereof |
| CN112082579B (en) * | 2020-07-31 | 2023-08-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half-bridge |
| CN113764459A (en) * | 2021-09-07 | 2021-12-07 | 中国科学院上海微***与信息技术研究所 | Low-temperature magnetic superconducting hybrid storage unit and memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353913A (en) * | 2011-07-13 | 2012-02-15 | 中国人民解放军国防科学技术大学 | Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field |
| WO2012056348A1 (en) * | 2010-10-26 | 2012-05-03 | Centre National De La Recherche Scientifique | Writable magnetic element |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7098495B2 (en) * | 2004-07-26 | 2006-08-29 | Freescale Semiconducor, Inc. | Magnetic tunnel junction element structures and methods for fabricating the same |
| US20110320142A1 (en) * | 2010-06-28 | 2011-12-29 | General Electric Company | Temperature independent pressure sensor and associated methods thereof |
| US8634231B2 (en) * | 2009-08-24 | 2014-01-21 | Qualcomm Incorporated | Magnetic tunnel junction structure |
| US8363459B2 (en) * | 2009-06-11 | 2013-01-29 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
| EP2325846B1 (en) * | 2009-11-12 | 2015-10-28 | Crocus Technology S.A. | A magnetic tunnel junction memory with thermally assisted writing |
-
2013
- 2013-06-21 CN CN201310247035.0A patent/CN103323796B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012056348A1 (en) * | 2010-10-26 | 2012-05-03 | Centre National De La Recherche Scientifique | Writable magnetic element |
| CN102353913A (en) * | 2011-07-13 | 2012-02-15 | 中国人民解放军国防科学技术大学 | Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
Non-Patent Citations (4)
| Title |
|---|
| 王素新 等.双势垒结构单层石墨烯的隧穿特性和电导.《河北师范大学学报(自然科学版)》.2012,第36卷(第1期), * |
| 石墨烯及其复合材料在酶电化学生物传感器中的应用;张谦 等;《分析化学》;20130531;第41卷(第5期);第641-649页 * |
| 石墨烯应用研究进展;张文毓 等;《传感器世界》;20111231(第5期);第6-11页 * |
| 磁性隧道结的隧穿磁电阻效应及其研究进展;李彦波 等;《物理》;20091231;第38卷(第6期);第420-426页 * |
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