CN103320869B - The Wrapping method of large diametric titanium sapphire crystal - Google Patents
The Wrapping method of large diametric titanium sapphire crystal Download PDFInfo
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- CN103320869B CN103320869B CN201310239549.1A CN201310239549A CN103320869B CN 103320869 B CN103320869 B CN 103320869B CN 201310239549 A CN201310239549 A CN 201310239549A CN 103320869 B CN103320869 B CN 103320869B
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- sapphire crystal
- bound edge
- titanium sapphire
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- wrapping method
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Abstract
A kind of Wrapping method of large diametric titanium sapphire crystal, mainly comprise the alumina-ceramic bound edge technology adopting the doped transition metal ionses such as chromium, iron, copper, utilize ceramic sintering process that rare earth ion doped alumina-ceramic crystal grain is grown along ti sapphire crystal, ti sapphire crystal and ceramic bound edge material combine.Utilize the transition metal ions such as chromium, iron, copper to suppress large diametric titanium sapphire crystal ASE effect to the absorption of about 800nm light simultaneously.Adopt the Wrapping method of large diametric titanium sapphire crystal of the present invention, considerably reduce the impact of ASE effect on laser amplifier, the peak power of ti sapphire crystal solid-state laser apparatus is improved.
Description
Technical field
The present invention relates to high power solid-state laser, particularly a kind of Wrapping method of large diametric titanium sapphire crystal.
Background technology
In the high power solid-state laser device taking ti sapphire crystal as gain media, the ti sapphire crystal needing to adopt heavy caliber high-dopant concentration active ion is exported in order to obtain intensity laser pulse, but such ti sapphire crystal more easily produces horizontal spontaneous radiation scale effect (ASE), the existence of this effect makes laser amplifier become very difficult, also becomes the technical bottleneck improving the gain of ti sapphire crystal solid statelaser.
Existing technology is mainly made bound edge material by organic ink or thermoplastic resin doping carbon dust and is carried out bound edge process, bound edge material used is organic materials, poor heat stability, mate with the completely the same of sapphire specific refractory power because organic specific refractory power is difficult to reach, so need to seek the Wrapping method that better can suppress horizontal spontaneous radiation scale effect simultaneously.
Summary of the invention
The technical problem to be solved in the present invention is, overcome the problem being difficult to completely the same coupling in first technology adopt organic ink or thermoplastic resin doping carbon dust to carry out poor heat stability that bound edge causes and specific refractory power, a kind of Wrapping method of large diametric titanium sapphire crystal is provided, the method adopts ti sapphire crystal homogeneous material to carry out bound edge, thus reach the coupling completely of specific refractory power and thermostability, thus meet high power ultra-short pulse laser facility application.The horizontal spontaneous emission light of Absorbable rod 800nm, to suppress the ASE effect of large diametric titanium sapphire crystal.
Technical solution of the present invention is as follows:
A Wrapping method for large diametric titanium sapphire crystal, its feature is that the concrete steps of the method are as follows:
The structure of <1> bound edge stupalith is Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3, the span of x, y, z is: 0≤x, y, z≤0.1 and 0.01<x+y+z, after the value of selected x, y, z, the superfine powder of aluminum oxide, chromic oxide, ferric oxide, cupric oxide is pressed Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3molar ratio weighing, be mixed to form mixed powder by ball milling;
Described mixed powder is prepared into film by flow casting molding by <2>, and then above-mentioned thinfilms is formed bound edge at large diametric titanium sapphire crystal periphery, bound edge thickness is 1 ~ 10mm, forms idiosome;
Described idiosome is put into vacuum sintering furnace or hydrogen atmosphere sintering oven by <3>, is warming up to 1700 ~ 1850 DEG C, is incubated 3 ~ 20 hours, then obtains bound edge large diametric titanium sapphire crystal.
Technique effect of the present invention:
1, the organic ink of employing formerly or thermoplastic resin doping carbon dust carry out the technology of bound edge, and poor heat stability and specific refractory power are difficult to the problem of completely the same coupling.The present invention is compared with large diametric titanium sapphire crystal bound edge technology formerly, have that homogeneity bound edge specific refractory power is completely the same, thermal conductivity is high, in conjunction with the advantage such as firm, better can suppress horizontal spontaneous radiation scale effect, suitable batch of the present invention is produced, the market requirement of laser technology fast development can be met, there is good economic benefit.
2, found by the research in early stage, in aluminum oxide, mix the transition metal ions such as chromium, iron, copper can be implemented in 800nm place and have stronger absorption.
Embodiment
Below in conjunction with embodiment, the invention will be further described, but should not limit scope with this.
Embodiment 1:
According to molecular formula Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3carry out proportioning raw materials, value x=0.1, y=0, z=0, ultra-fine alumina and chromium oxide powder are weighed, is mixed by ball milling; Powder is prepared into film by flow casting molding, and then above-mentioned thinfilms is formed bound edge at large diametric titanium sapphire crystal periphery, bound edge thickness gets 1mm as required.Described bound edge sample is put into vacuum sintering furnace, is warming up to 1800 DEG C, be incubated 20 hours, obtain bound edge large diametric titanium sapphire crystal, this bound edge material significantly can improve horizontal ASE effect.
Embodiment 2:
According to molecular formula Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3carry out proportioning raw materials, value x=0, y=0.02, z=0.01, ultra-fine alumina, ferric oxide and cupric oxide powder are weighed, is mixed by ball milling; Powder is prepared into film by flow casting molding, and then above-mentioned thinfilms is formed bound edge at large diametric titanium sapphire crystal periphery, bound edge thickness gets 5mm as required.Described bound edge sample is put into hydrogen atmosphere sintering oven, is warming up to 1850 DEG C, be incubated 15 hours, obtain bound edge large diametric titanium sapphire crystal, this bound edge material significantly can improve horizontal ASE effect.
Embodiment 3:
According to molecular formula Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3carry out proportioning raw materials, value x=0.05, y=0.02, z=0.01, ultra-fine alumina and chromic oxide, ferric oxide, cupric oxide powder are weighed, is mixed by ball milling; Powder is prepared into film by flow casting molding, and then above-mentioned thinfilms is formed bound edge at large diametric titanium sapphire crystal periphery, bound edge thickness gets 3mm as required.Described bound edge sample is put into vacuum sintering furnace, is warming up to 1700 DEG C, be incubated 20 hours, obtain bound edge large diametric titanium sapphire crystal, this bound edge material significantly can improve horizontal ASE effect.
Claims (1)
1. a Wrapping method for large diametric titanium sapphire crystal, is characterized in that the concrete steps of the method are as follows:
The structure of <1> bound edge stupalith is Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3, the span of x, y, z is: 0≤x, y, z≤0.1 and 0.01<x+y+z, after the value of selected x, y, z, the superfine powder of aluminum oxide, chromic oxide, ferric oxide, cupric oxide is pressed Cr
x, Fe
y, Cu
z: Al
2 (1-x-y-z)o
3molar ratio weighing, be mixed to form mixed powder by ball milling;
Described mixed powder is prepared into film by flow casting molding by <2>, and then above-mentioned thinfilms is formed bound edge at large diametric titanium sapphire crystal periphery, bound edge thickness is 1 ~ 10mm, forms idiosome;
Described idiosome is put into vacuum sintering furnace or hydrogen atmosphere sintering oven by <3>, is warming up to 1700 ~ 1850 DEG C, is incubated 3 ~ 20 hours, then obtains bound edge large diametric titanium sapphire crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310239549.1A CN103320869B (en) | 2013-06-17 | 2013-06-17 | The Wrapping method of large diametric titanium sapphire crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310239549.1A CN103320869B (en) | 2013-06-17 | 2013-06-17 | The Wrapping method of large diametric titanium sapphire crystal |
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| CN103320869A CN103320869A (en) | 2013-09-25 |
| CN103320869B true CN103320869B (en) | 2016-02-10 |
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Families Citing this family (1)
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| CN106400121B (en) * | 2016-09-30 | 2018-08-24 | 中国计量大学 | A kind of method of doped transition metal ions aluminium oxide ceramics bound edge large diametric titanium sapphire crystal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1713466A (en) * | 2005-03-31 | 2005-12-28 | 中国工程物理研究院激光聚变研究中心 | Edge covering method for large-diameter titanium-doped sapphire crystals |
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2013
- 2013-06-17 CN CN201310239549.1A patent/CN103320869B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1713466A (en) * | 2005-03-31 | 2005-12-28 | 中国工程物理研究院激光聚变研究中心 | Edge covering method for large-diameter titanium-doped sapphire crystals |
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