CN103311635B - Planar circuit tuning structure - Google Patents

Planar circuit tuning structure Download PDF

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CN103311635B
CN103311635B CN201210067881.XA CN201210067881A CN103311635B CN 103311635 B CN103311635 B CN 103311635B CN 201210067881 A CN201210067881 A CN 201210067881A CN 103311635 B CN103311635 B CN 103311635B
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tuning
dielectric
supporter
metal
planar circuit
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CN103311635A (en
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王清源
谭宜成
莫坤山
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Chengdu Sinoscite Technology Co Ltd
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Abstract

The invention discloses a planar circuit tuning structure comprising a metal cavity, a tuning support body which extends into the metal cavity from outside, and a tuning dielectric body which is arranged on one end, which extends into the metal cavity, of the tuning support body; a dielectric substrate which is connected with the inner wall of the metal cavity and a metal conduction band which is connected with the dielectric substrate are also arranged; and the tuning dielectric body is arranged above the metal conduction band. The planar circuit tuning structure has the characteristics of simplicity in processing, flexible structure, convenience in use, flexibility in tuning and the like, and can be widely applied to electronic systems with various microwave bands, particularly radar, missile guidance, communication and other military and civilian fields.

Description

A kind of planar circuit tuning structure
Technical field
The present invention relates to a kind of planar circuit tuning structure, specifically, relate to a kind of dielectric resonant chamber tuning structure regulated for microwave device characteristic.
Background technology
Microwave device is carried out tuning in, usually can use tuning screw.But the tuning sensitivity of common tuning screw is limited, and often there is tuning screw and by the very little situation in the gap between dielectric resonant chamber tuning structure, which increase tuning difficulty, and this situation also can bring stability problem.In the devices such as microstrip structure, dielectric resonant chamber and dielectric oscillator, because energy of electromagnetic field in these devices concentrates in device, make the impact on electromagnetic field of general tuning screw very little, tuning poor effect.
Summary of the invention
Major advantage of the present invention, utilizes and is positioned at the very high dielectric material of tuning screw front end, dielectric constant or permeability, changes the magnetic distribution near microwave device significantly, thus regulates the characteristic of microwave device better.
The object of the present invention is to provide that a kind of structure is simple, processing is simple, debug dielectric resonant chamber tuning structure easily.
For achieving the above object, the technical solution used in the present invention is: a kind of planar circuit tuning structure, comprises metal cavitg and the tuning supporter that stretches into from metal cavitg in metal cavitg and be arranged on the tuning dielectric that tuning supporter extend into one end in metal cavitg; Also comprise with the dielectric substrate that is connected of metal cavitg inwall and the metal conduction band that is connected with dielectric substrate; Tuning dielectric is positioned at the top of metal conduction band.
In the present invention, the present invention arranges tuning dielectric by extending into one end in metal cavitg at tuning supporter.By the effect of tuning dielectric, its magnetic distribution can be changed, thus the characteristic of microwave device is regulated.General aerial electromagnetic wavelength ratio is comparatively large, after adding tuning dielectric, changes electromagnetic transmission wavelength.Can change its magnetic distribution with this, very large on the impact of electromagnetic field, tuning effect is fine, increases the sensitivity regulated.In order to further increase tuning sensitivity, the present invention also comprise with the dielectric substrate that is connected of metal cavitg inwall and the metal conduction band that is connected with dielectric substrate; Tuning dielectric is positioned at the top of metal conduction band.Tuning dielectric be positioned at metal conduction band on can be formed effect ground tuning structure; The general metal conduction band 7 adopted is very thin sheet metal simultaneously, can play the object of saving material, cost simultaneously.
Described tuning supporter is column structure; The interface of described tuning dielectric and tuning supporter is plane.
Tuning supporter is provided with column structure to facilitate processing and facilitate tuning supporter up-down adjustment, makes to change the impact on electromagnetic field at any time.
Also be provided with foil between described tuning dielectric and tuning supporter, and tuning dielectric, foil, interface between tuning supporter three are plane parallel to each other; Described tuning dielectric is also provided with foil away from the one side of tuning supporter.
Be plane parallel to each other by the interface between tuning dielectric, foil, tuning supporter three.Simple, convenient batch production of structural design of they three with this.Interface between three is arranged to plane parallel to each other simultaneously, the connection between they three can be facilitated.Reduce process time and difficulty of processing.
Due to the standardized product that the tuning dielectric generally adopted is on existing market, therefore the tuning dielectric of general standard generally welds for the convenience of the users, its one end is all provided with foil, in order to be arranged to electric capacity on this basis, the present invention is special is also provided with foil at tuning dielectric away from the one side of tuning supporter, the two ends up and down of tuning like this dielectric are provided with foil, form capacitance body structure with this, thus increase the impact effect to electromagnetic field.The further sensitivity increasing adjustment.
Described tuning supporter is provided with screw thread in the one end away from metal cavitg inside; Tuning supporter is also provided with fixture in the one end away from metal cavitg inside, and described tuning supporter is coordinated with fixture by screw thread, makes the up mobile adjustment in metal cavitg of tuning supporter, and is fixed by fixture.
The tuning supporter that the present invention is arranged is coordinated with fixture by screw thread, by rotary fixing device, tuning supporter can be made to move up and down, convenient to electromagnetic subjectivity adjustment artificially.
Between described tuning supporter and tuning dielectric, be also provided with cylindrical metal platform, the linkage interface of described cylindrical metal platform and tuning supporter, tuning dielectric is plane.
When tuning supporter cross section is smaller time, time tuning dielectric is larger, now, tuning supporter is wanted to weld with tuning dielectric, therefore certain difficulty is had, for this reason, the present invention spy is provided with cylindrical metal platform between tuning supporter and tuning dielectric, make tuning supporter together with tuning medium physical efficiency rapid welding by the form of intermediate, when electric property of the present invention can not be affected, increase cylindrical metal platform, can conveniently connect, increase production efficiency.
Described metal cavitg is the cavity of opening or closed cavity.
In time using Antenna Design field, metal cavitg is adopted to be the cavity of opening; In time using filter, coupler field, metal cavitg is adopted to be closed cavity.
The dielectric constant of described tuning dielectric is or/and permeability is greater than 30.
Metal conduction band is that bottom is connected with dielectric substrate and thickness is less than the metal level of the arbitrary shape of 0.1mm.
Dielectric substrate is the dielectric that the dielectric constant of the arbitrary shape that bottom or sidewall are connected with metal cavitg is less than 3, and the top of described dielectric substrate is regular planar.
Formation top is regular planar, can facilitate dielectric substrate and metal guide welding.
Through repeatedly contrast experiment's Data Comparison effect and theory deduction, when tuning supporter be conductor or and relative dielectric constant or and the relative permeability dielectric material that is less than 3.And when tuning dielectric relative dielectric constant or and relative permeability is greater than 30 time, can more effectively change microwave device built-in field distribution.Thus the adjustment more effectively realized microwave device.
When adopt relative dielectric constant or and the material of relative permeability smaller tuning dielectric time, DeGrain of the present invention, there is no the meaning of what reality, therefore, the present invention adopt relative dielectric constant or and the relative permeability tuning dielectric that is greater than 30, its effect is more obvious.
The operation principle of dielectric resonant chamber tuning structure is: insert metallic object or medium in microwave device inside, can change its magnetic distribution, thus regulate the characteristic of microwave device.Adopt the dielectric resonant chamber tuning structure with tuning medium (dielectric constant is or/and permeability is greater than 30), more effectively can change the distribution of microwave device built-in field.Thus the adjustment that can sensitiveer, more effectively realize microwave device.
The invention has the advantages that, processing is simple, flexible structure, easy to use, tuning sensitive.Tuning structure of the present invention is expected to be widely used in various microwave device, particularly the military affairs such as radar, missile guidance, communication and civil area.
Accompanying drawing explanation
Fig. 1 is the front view schematic diagram of the embodiment of the present invention one.
Fig. 2 is the vertical view schematic diagram of the embodiment of the present invention two.
Fig. 3 is the vertical view schematic diagram of the embodiment of the present invention three.
Fig. 4 is the vertical view schematic diagram of the embodiment of the present invention four.
Label in figure is expressed as:
1-metal cavitg; The tuning supporter of 2-; The tuning dielectric of 3-; 4-foil; 5-cylindrical metal platform; 6-fixture; 7-metal conduction band; 8-dielectric substrate.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment one
As shown in Figure 1, 2,
A kind of planar circuit tuning structure, comprises metal cavitg 1 and from metal cavitg 1, stretches into the tuning supporter 2 in metal cavitg 1 and be arranged on the tuning dielectric 3 that tuning supporter 2 extend into one end in metal cavitg 1; Also comprise with the dielectric substrate 8 that is connected of metal cavitg 1 inwall and the metal conduction band 7 that is connected with dielectric substrate 8; Tuning dielectric 3 is positioned at the top of metal conduction band 7.
In the present invention, the present invention arranges tuning dielectric 3 by extending into one end in metal cavitg 1 at tuning supporter 2.By the effect of tuning dielectric 3, its magnetic distribution can be changed, thus the characteristic of microwave device is regulated.General aerial electromagnetic wavelength ratio is comparatively large, after adding tuning dielectric 3, changes electromagnetic transmission wavelength.Can change its magnetic distribution with this, very large on the impact of electromagnetic field, tuning effect is fine, increases the sensitivity regulated.
Described tuning supporter 2 is column structure; Described tuning dielectric 3 is plane with the interface of tuning supporter 2.
Tuning supporter 2 is provided with column structure to facilitate processing and facilitate tuning supporter 2 up-down adjustment, makes to change the impact on electromagnetic field at any time.
Also be provided with foil 4 between described tuning dielectric 3 and tuning supporter 2, and tuning dielectric 3, foil 4, interface between tuning supporter 2 three are plane parallel to each other; Described tuning dielectric 3 is also provided with foil 4 away from the one side of tuning supporter 2.
By the connection between three.Reduce process time and difficulty of processing.Interface between tuning dielectric 3, foil 4, tuning supporter 2 three is plane parallel to each other.Simple, convenient batch production of structural design of they three with this.Interface between three is arranged to plane parallel to each other simultaneously, can be facilitated them
Due to the standardized product that the tuning dielectric 3 generally adopted is on existing market, therefore the tuning dielectric 3 of general standard generally welds for the convenience of the users, its one end is all provided with foil 4, in order to be arranged to electric capacity on this basis, the present invention is special is also provided with foil 4 at tuning dielectric 3 away from the one side of tuning supporter 2, the two ends up and down of tuning like this dielectric 3 are provided with foil 4, form capacitance body structure with this, thus increase the impact effect to electromagnetic field.The further sensitivity increasing adjustment.
Described tuning supporter 2 is provided with screw thread in the one end away from metal cavitg 1 inside; Tuning supporter 2 is also provided with fixture 6 in the one end away from metal cavitg 1 inside, and described tuning supporter 2 is coordinated with fixture 6 by screw thread, makes the up mobile adjustment in metal cavitg 1 of tuning supporter 2, and is fixed by fixture 6.
The tuning supporter 2 that the present invention is arranged is coordinated with fixture 6 by screw thread, by rotary fixing device 6, tuning supporter 2 can be made to move up and down, convenient to electromagnetic subjectivity adjustment artificially.
Between described tuning supporter 2 and tuning dielectric 3, be also provided with cylindrical metal platform 5, described cylindrical metal platform 5 is plane with the linkage interface of tuning supporter 2, tuning dielectric 3.
When tuning supporter 2 cross section is smaller time, time tuning dielectric 3 is larger, now, tuning supporter 2 is wanted to weld with tuning dielectric 3, therefore certain difficulty is had, for this reason, the present invention spy is provided with cylindrical metal platform 5 between tuning supporter 2 and tuning dielectric 3, make tuning supporter 2 together with tuning dielectric 3 energy rapid welding by the form of intermediate, when electric property of the present invention can not be affected, increase cylindrical metal platform 5, can conveniently connect, increase production efficiency.
Described metal cavitg 1 is the cavity of opening or closed cavity.
In time using Antenna Design field, metal cavitg 1 is adopted to be the cavity of opening; In time using filter, coupler field, metal cavitg 1 is adopted to be the cavity closed.
Described tuning supporter 2 is less than dielectric material or the conductor of 3 for dielectric constant.
The dielectric constant of described tuning dielectric 3 is or/and permeability is greater than 30.
Metal conduction band 7 is that bottom is connected with dielectric substrate 8 and thickness is less than the metal level of the arbitrary shape of 0.1mm.
Dielectric substrate 8 is the dielectric that the dielectric constant of the arbitrary shape that bottom or sidewall are connected with metal cavitg 1 is less than 3, and the top of described dielectric substrate 8 is regular planar.
Through repeatedly contrast experiment's Data Comparison effect and theory deduction, when tuning supporter 2 be conductor or and relative dielectric constant or and the relative permeability dielectric material that is less than 3.And when tuning dielectric 3 relative dielectric constant or and relative permeability is greater than 30 time, can more effectively change microwave device built-in field distribution.Thus the adjustment more effectively realized microwave device.
When adopt relative dielectric constant or and the material of relative permeability smaller tuning dielectric time, DeGrain of the present invention, there is no the meaning of what reality, therefore, the present invention adopt relative dielectric constant or and the relative permeability tuning dielectric 3 that is greater than 30, its effect is more obvious.
As shown in Figure 1, the present invention includes metal cavitg 1, tuning supporter 2, tuning dielectric 3, foil 4, cylindrical metal platform 5, fixture 6, metal conduction band 7, dielectric substrate 8.It is inner that tuning supporter 2 stretches into metal cavitg 1 by metal cavitg 1 outside, and fixed by fixture 6 in outside.The top stretching into metal cavitg 1 part at tuning supporter 2 is connected with cylindrical metal platform 5, foil 4 is connected with away from the end face of tuning supporter 2 at cylindrical metal platform 5, foil 4 is connected with tuning dielectric 3 away from the end face of cylindrical metal platform 5, and tuning dielectric 3 is connected with another sheet foil 4 away from the end face of foil 4.
Tuning supporter 2, tuning dielectric 3, foil 4, cylindrical metal platform 5, fixture 6 are all column structure, and it is inner that axis points to metal cavitg 1 from metal cavitg 1 outside, and axis all on the same line, and joint face is plane.
Metal cavitg 1 is non-enclosed cavity.
Tuning supporter 2 is the dielectric material that conductor or dielectric constant are less than 5.
Relative dielectric constant or the relative permeability of tuning dielectric 3 are greater than 30.
Metal conduction band is the metal level that thickness is less than the arbitrary shape of 0.1mm.
Dielectric substrate 8 is less than the dielectric of 5 for relative dielectric constant.
Metal conduction band 7, dielectric substrate 8 are positioned at the below of dielectric 3.
Embodiment two
As shown in Figure 2, the difference of this embodiment embodiment one is:
Metal cavitg 1 is enclosed cavity.
Metal conduction band 7 is the slot line structure of two parallel conductor layer compositions.
Embodiment three
As shown in Figure 3, the difference of this embodiment embodiment one is:
Metal conduction band 7 is the coplanar waveguide structure of three parallel conductor layer compositions.
Embodiment four
As shown in Figure 4, the difference of this embodiment embodiment one is:
Metal cavitg 1 is enclosed cavity.
This example does not have metal conduction band 7, only has dielectric substrate 8 to form dielectric waveguide structure.
We give the embodiment of four kinds of planar circuit tuning structures here.Implementation of the present invention is hard-core.Such as, can determine on tuning structure, whether use cylindrical metal platform 5 and foil 4 according to actual conditions, can by the fixture 6 of various structure, and the dielectric substrate 8 etc. of various different materials.This resonant cavity tuning structure also can as part for forming other filtering device and microwave components.
Just better the present invention can be implemented as mentioned above.

Claims (8)

1. a planar circuit tuning structure, is characterized in that: comprise metal cavitg (1), stretch into the tuning supporter (2) in metal cavitg (1) from metal cavitg (1) and be arranged on the tuning dielectric (3) that tuning supporter (2) extend into metal cavitg (1) interior one end; Also comprise the dielectric substrate (8) be connected with metal cavitg (1) inwall, the metal conduction band (7) be connected with dielectric substrate (8); Tuning dielectric (3) is positioned at the top of metal conduction band (7); Also be provided with foil (4) between described tuning dielectric (3) and tuning supporter (2), and tuning dielectric (3), foil (4), interface between tuning supporter (2) three are plane parallel to each other; Described tuning dielectric (3) is also provided with foil (4) away from the one side of tuning supporter (2).
2. a kind of planar circuit tuning structure according to claim 1, is characterized in that, described tuning supporter (2) is column structure; Described tuning dielectric (3) is plane with the interface of tuning supporter (2).
3. a kind of planar circuit tuning structure according to claim 1, is characterized in that, described tuning supporter (2) is provided with screw thread in one end inner away from metal cavitg (1); Tuning supporter (2) is also provided with fixture (6) in one end inner away from metal cavitg (1), described tuning supporter (2) is coordinated with fixture (6) by screw thread, make tuning supporter (2) up mobile adjustment in metal cavitg (1), and fixed by fixture (6).
4. a kind of planar circuit tuning structure according to claim 1, it is characterized in that, between described tuning supporter (2) and tuning dielectric (3), be also provided with cylindrical metal platform (5), described cylindrical metal platform (5) is plane with the linkage interface of tuning supporter (2), tuning dielectric (3).
5. according to a kind of planar circuit tuning structure in claim 1-4 described in any one, it is characterized in that, the cavity that described metal cavitg (1) is opening or closed cavity.
6. according to a kind of planar circuit tuning structure in claim 1-4 described in any one, it is characterized in that, the dielectric constant of described tuning dielectric (3) is or/and permeability is greater than 30.
7. according to a kind of planar circuit tuning structure in claim 1-4 described in any one, it is characterized in that, metal conduction band (7) to be connected with dielectric substrate (8) and thickness is less than the metal level of the arbitrary shape of 0.1mm for bottom.
8. according to a kind of planar circuit tuning structure in claim 1-4 described in any one, it is characterized in that, the dielectric that the dielectric constant of the arbitrary shape that dielectric substrate (8) is connected with metal cavitg (1) for bottom or sidewall is less than 3, and the top of described dielectric substrate (8) is regular planar.
CN201210067881.XA 2012-03-15 2012-03-15 Planar circuit tuning structure Active CN103311635B (en)

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Publication number Priority date Publication date Assignee Title
JP6236701B2 (en) * 2014-12-09 2017-11-29 国立大学法人山梨大学 Improved tunable dual-band bandpass filter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201523058U (en) * 2009-10-28 2010-07-07 华南理工大学 Controllable electromagnetic coupling dielectric resonator filter
CN101834334A (en) * 2010-05-07 2010-09-15 摩比天线技术(深圳)有限公司 Coupling method and coupling port of coaxial cavity filter
CN201655941U (en) * 2010-04-29 2010-11-24 网拓(上海)通信技术有限公司 Adjustable cavity body filter
CN202444046U (en) * 2012-03-15 2012-09-19 成都赛纳赛德科技有限公司 Planar circuit tunning structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201523058U (en) * 2009-10-28 2010-07-07 华南理工大学 Controllable electromagnetic coupling dielectric resonator filter
CN201655941U (en) * 2010-04-29 2010-11-24 网拓(上海)通信技术有限公司 Adjustable cavity body filter
CN101834334A (en) * 2010-05-07 2010-09-15 摩比天线技术(深圳)有限公司 Coupling method and coupling port of coaxial cavity filter
CN202444046U (en) * 2012-03-15 2012-09-19 成都赛纳赛德科技有限公司 Planar circuit tunning structure

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Effective date of registration: 20201125

Address after: 224000 604, building 31, Hongya Mingju, Hede Town, Sheyang County, Yancheng City, Jiangsu Province

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Address before: 610000 Shiyang Industrial Park, hi tech Zone, Chengdu, Sichuan

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