CN103309487A - Preparation method of ITO (indium tin oxide) electrodes - Google Patents
Preparation method of ITO (indium tin oxide) electrodes Download PDFInfo
- Publication number
- CN103309487A CN103309487A CN2012100673233A CN201210067323A CN103309487A CN 103309487 A CN103309487 A CN 103309487A CN 2012100673233 A CN2012100673233 A CN 2012100673233A CN 201210067323 A CN201210067323 A CN 201210067323A CN 103309487 A CN103309487 A CN 103309487A
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- ito
- preparation
- temperature protection
- ito electrode
- base material
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000012780 transparent material Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 38
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 claims description 6
- 238000013036 cure process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005452 bending Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Manufacturing Of Electric Cables (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a preparation method of ITO (indium tin oxide) electrodes, wherein the ITO electrodes are made of transparent materials, and the transparent materials comprise substrates and ITO conducting layers formed on the substrates. During the electrode manufacturing, the transparent materials need to be subjected to silver slurry baking. The method also comprises the step of forming a high-temperature protection film on the surface of the substrates opposite to the ITO conducting layers before the silver slurry baking step. After the addition of the high-temperature protection film, the thickness of the prepared ITO electrodes is greater than that of products without high-temperature protection films, and in addition, the structural intensity is higher, so after the silver slurry baking, obvious stress different bending deformation cannot be generated between the etching region and the non-etching region of the ITO conducting layers. Therefore, the ITO electrodes prepared by adopting the method have the advantage that the surface deformation visuality can be effectively reduced.
Description
[technical field]
The present invention relates to electronic material technology, particularly relate to a kind of preparation method of ITO electrode.
[background technology]
Tin-doped indium oxide (be Indium Tin Oxide, be called for short ITO) is a kind of n type semiconductor material, owing to have high conductivity, high visible light transmissivity, high mechanical hardness and chemical stability, therefore, it is a kind of transparent conductive material commonly used, applies to the various product transparency electrode.In the utilization of reality, ITO adopted physical vacuum method evaporation in certain base material before this, was prepared into the ITO conductive layer, and then as required, the pattern that film etching one-tenth is predetermined is as transparency electrode.
In the utilization of ITO conductive layer as electrode of PET base material, be to be etched into predetermined pattern.Because the expansion coefficient of ITO and the expansion coefficient difference of base material are huge, cause the stress difference of ITO conductive layer etching area and the non-etching area of ITO conductive layer remarkable, after through once complete silver slurry baking thermal history (heating up--constant temperature---cooling), produce the crooked deformation of obvious stress difference, similar deformation with temperature memory function thermometal paster at the non-etching area of ITO.After fitting into capacitive touch screen, the crooked deformation of stress difference still remains in ITO film surface and can not disappear.Just can find the deformation of this ITO under general light and visual angle, this phenomenon can not be touched product by high-quality demonstration and accept.
[summary of the invention]
In view of above-mentioned condition, be necessary to provide a kind of preparation method that can effectively alleviate the ITO electrode of ITO electrode surface deformation visuality.
A kind of preparation method of ITO electrode, described ITO electrode adopts transparent material to make, and described transparent material comprises base material and is formed at ITO conductive layer on the described base material, carries out comprising before silver slurry toasts at described transparent material:
Form the high temperature protection film at described base material and described ITO conductive layer facing surfaces.
Further, also comprise:
Surface at described base material forms the ITO conductive layer, and described ITO conductive layer is etched into predetermined pattern, obtains the ITO electrode;
The step of described silver slurry baking is the etching area printing conductive silver slurry at described ITO conductive layer, and oven dry.
Further, after stating clearly material carries out the baking of silver slurry, also comprise:
Remove described high temperature protection film, obtain described ITO electrode.
Further, described base material is the ethylene glycol terephthalate of individual layer.
Further, anti-dazzle and/or cure process is carried out on the surface of described base material.
Further, the material of described high temperature protection film is ethylene glycol terephthalate.
Further, the thickness of described high temperature protection film is 0.025～0.25 millimeter.
The preparation method of above-mentioned ITO electrode also was included in the step that base material does not adhere to the surface formation high temperature protection film of ITO conductive layer before the step of carrying out the baking of silver slurry.Because after increasing the high temperature protection film; the thickness of prepared ITO electrode is thick compared to no high temperature protection film product; and it is high that structural strength is wanted, and therefore through after the baking of silver slurry, can not produce the flexural deformation of obvious stress difference between the etching region of ITO conductive layer and the non-etching region.Therefore, the ITO electrode of employing method for preparing can effectively alleviate the visuality of its surface deformation.
[description of drawings]
Fig. 1 is preparation method's the process flow diagram of the ITO electrode of embodiment one;
Fig. 2 is preparation method's the process flow diagram of the ITO electrode of embodiment two.
[embodiment]
For the ease of understanding the present invention, with reference to relevant drawings the present invention is described more fully below.Provided preferred embodiment of the present invention in the accompanying drawing.But the present invention can realize with many different forms, be not limited to embodiment described herein.On the contrary, provide the purpose of these embodiment be make the understanding of disclosure of the present invention comprehensively thorough more.
Need to prove that when element is called as " being fixed in " another element, can directly can there be element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be to be directly connected to another element or may to have element placed in the middle simultaneously.
Unless otherwise defined, the employed all technology of this paper are identical with the implication that belongs to those skilled in the art's common sense of the present invention with scientific terminology.Employed term is not intended to be restriction the present invention just in order to describe the purpose of specific embodiment in instructions of the present invention herein.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
See also Fig. 1, the preparation method of the ITO electrode among the embodiment one comprises step S110～S130.
Step S110 forms the ITO conductive layer on the surface of base material, and the ITO conductive layer is etched into predetermined pattern, obtains the ITO electrode.
Wherein, base material can be glass or ethylene glycol terephthalate (PET).In the present embodiment, base material is preferably PET, and wherein PET both can be individual layer, also can be double-deck.The thickness of base material is 0.020～0.250 millimeter.In the present embodiment, also substrate surface is carried out anti-dazzle and/or cure process, anti-dazzle and cure process can also can be on two surfaces on a surface of base material.
In the present embodiment, adopt the mode of evaporation to form the ITO conductive layer, evaporation form the ITO conductive layer the purity height, be easy to detect and control thickness, and need not to carry out heating, drying.In actual production, the ITO conductive layer be made electrode needs earlier the ITO conductive layer to be etched into predetermined pattern.In the present embodiment, the pattern that the mode of taking laser to do quarter obtains being scheduled to.In other embodiments, the pattern that can also obtain being scheduled to as chemical etching by other means.
Step S120 forms the high temperature protection film at base material and ITO conductive layer facing surfaces.
In the present embodiment, the material of high temperature protection film is ethylene glycol terephthalate (PET).The material that it is pointed out that the high temperature protection film also can be other materials, as polycarbonate high molecular polymer materials such as (PC).In addition, the thickness of high temperature protection film is 0.025～0.25 millimeter.Because the high temperature protection film has certain thickness and intensity, therefore, the ITO electrode of the high temperature protection film of having fitted is compared with the ITO electrode of no high temperature protection film has higher structural strength.
Step S130, at the etching area printing conductive silver slurry of ITO conductive layer, and oven dry.
After the ITO conductive layer being etched into the pattern of electrode, need be at the lead-in wire of its surface printing one deck conductive silver paste as electrode.Behind the printing conductive silver slurry, need be with the oven dry of silver slurry.Have higher structural strength owing to increased the ITO electrode of high temperature protection film, therefore, dry and can not produce the crooked deformation of stress difference between back etching region at the ITO film and the non-etching region.
It is pointed out that in other embodiments, can form the high temperature protection film on a surface of base material earlier, and then form the ITO conductive layer on the surface for forming the high temperature protection film of base material.
See also Fig. 2, the preparation method of the ITO electrode among the embodiment two comprises step S210～S240.
Step S210 forms the ITO conductive layer on the surface of base material, and the ITO conductive layer is etched into predetermined pattern, obtains the ITO electrode.
Step S220 forms the high temperature protection film at base material and ITO conductive layer facing surfaces.
Step S230, at the etching area printing conductive silver slurry of ITO conductive layer, and oven dry.
It is pointed out that in other embodiments, can form the high temperature protection film on a surface of base material earlier, and then form the ITO conductive layer on the surface for forming the high temperature protection film of base material.
Step S240 removes the high temperature protection film.
High temperature protection film role just prevents the crooked deformation of stress difference in the process of carrying out the baking of silver slurry.Because the thickness of high temperature protection film is bigger, be fitted with the thickness of ITO electrode of high temperature protection film compared to increasing greatly in the past.And the trend of present electronic product is to do more and more frivolously, so it is undesirable to be fitted with the ITO electrode of high temperature protection film.Therefore, the high temperature protection film be should give removal after the baking of silver slurry, do not comprise the high temperature protection film on the resulting finished product ITO electrode.
The preparation method of above-mentioned ITO electrode also was included in the step that base material and ITO conductive layer facing surfaces form the high temperature protection film before the step of carrying out the baking of silver slurry.Because after increasing the high temperature protection film; the thickness of prepared ITO electrode is thick compared to no high temperature protection film product; and it is high that structural strength is wanted, and therefore through after the baking of silver slurry, can not produce the flexural deformation of obvious stress difference between the etching region of ITO conductive layer and the non-etching region.Therefore, the ITO electrode of employing method for preparing can effectively alleviate the visuality of its surface deformation.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. the preparation method of an ITO electrode, described ITO electrode adopts transparent material to make, and described transparent material comprises base material and is formed at ITO conductive layer on the described base material, it is characterized in that, carries out comprising before silver slurry toasts at described transparent material:
Form the high temperature protection film at described base material and described ITO conductive layer facing surfaces.
2. the preparation method of ITO electrode as claimed in claim 1 is characterized in that, also comprises:
Surface at described base material forms the ITO conductive layer, and described ITO conductive layer is etched into predetermined pattern, obtains the ITO electrode;
The step of described silver slurry baking is the etching area printing conductive silver slurry at described ITO conductive layer, and oven dry.
3. the preparation method of ITO electrode as claimed in claim 1 or 2 is characterized in that, after stating clearly material carries out the baking of silver slurry, also comprises:
Remove described high temperature protection film.
4. the preparation method of ITO electrode as claimed in claim 1 is characterized in that, anti-dazzle and/or cure process is carried out on the surface of described base material.
5. the preparation method of ITO electrode as claimed in claim 1 is characterized in that, described base material is the ethylene glycol terephthalate of individual layer.
6. the preparation method of ITO electrode as claimed in claim 1 is characterized in that, the so-called thickness of described base material is 0.020～0.250 millimeter.
7. the preparation method of ITO electrode as claimed in claim 1 is characterized in that, the material of described high temperature protection film is ethylene glycol terephthalate.
8. the preparation method of ITO electrode as claimed in claim 1 is characterized in that, the thickness of described high temperature protection film is 0.025～0.25 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210067323.3A CN103309487B (en) | 2012-03-14 | 2012-03-14 | The preparation method of ITO electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210067323.3A CN103309487B (en) | 2012-03-14 | 2012-03-14 | The preparation method of ITO electrode |
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| Publication Number | Publication Date |
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| CN103309487A true CN103309487A (en) | 2013-09-18 |
| CN103309487B CN103309487B (en) | 2016-08-17 |
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| CN201210067323.3A Expired - Fee Related CN103309487B (en) | 2012-03-14 | 2012-03-14 | The preparation method of ITO electrode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106923822A (en) * | 2017-02-28 | 2017-07-07 | 铂元智能科技(北京)有限公司 | The manufacture method of electrocardioelectrode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739160A (en) * | 2008-11-17 | 2010-06-16 | 深圳市航泰光电有限公司 | Manufacturing method of ITO film for touch screen |
| CN201590912U (en) * | 2009-12-30 | 2010-09-22 | 长城信息产业股份有限公司 | Anti-deformation flexible transparent heating film |
| CN101893954A (en) * | 2010-05-07 | 2010-11-24 | 佛山市顺德区锐新科屏蔽材料有限公司 | Novel manufacturing process of touch screen |
| CN102200654A (en) * | 2011-06-07 | 2011-09-28 | 南京福莱克斯光电科技有限公司 | Integrated touch display device and making method thereof |
| WO2012005271A1 (en) * | 2010-07-09 | 2012-01-12 | Jnc株式会社 | Transparent conductive film and method for producing same |
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2012
- 2012-03-14 CN CN201210067323.3A patent/CN103309487B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739160A (en) * | 2008-11-17 | 2010-06-16 | 深圳市航泰光电有限公司 | Manufacturing method of ITO film for touch screen |
| CN201590912U (en) * | 2009-12-30 | 2010-09-22 | 长城信息产业股份有限公司 | Anti-deformation flexible transparent heating film |
| CN101893954A (en) * | 2010-05-07 | 2010-11-24 | 佛山市顺德区锐新科屏蔽材料有限公司 | Novel manufacturing process of touch screen |
| WO2012005271A1 (en) * | 2010-07-09 | 2012-01-12 | Jnc株式会社 | Transparent conductive film and method for producing same |
| CN102200654A (en) * | 2011-06-07 | 2011-09-28 | 南京福莱克斯光电科技有限公司 | Integrated touch display device and making method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106923822A (en) * | 2017-02-28 | 2017-07-07 | 铂元智能科技(北京)有限公司 | The manufacture method of electrocardioelectrode |
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| CN103309487B (en) | 2016-08-17 |
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Granted publication date: 20160817 |