CN103296979B - A kind of without medium high frequency easily extensible high-performance broadband orthoron - Google Patents
A kind of without medium high frequency easily extensible high-performance broadband orthoron Download PDFInfo
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- CN103296979B CN103296979B CN201310199518.8A CN201310199518A CN103296979B CN 103296979 B CN103296979 B CN 103296979B CN 201310199518 A CN201310199518 A CN 201310199518A CN 103296979 B CN103296979 B CN 103296979B
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Abstract
The present invention is applicable to amplifier technique field, provides a kind of without medium high frequency easily extensible high-performance broadband orthoron, comprises epicoele, plate and cavity of resorption; Described plate is positioned at the mid portion of described epicoele and described cavity of resorption; Described cavity of resorption broadside has a metal ridge, and described metal ridge forms the uneven transformational structure to balancing together with described plate, realizes the conversion of waveguide field mode to co-planar waveguide field mode; The combination of described epicoele, plate and cavity of resorption is in aggregates.Orthoron of the present invention completely eliminates the harmful effect such as dielectric loss and resonance that dielectric substrate brings, great raising is based on the performance of the millimeter wave amplifier designed by this circuit, particularly frequency is higher, and the advantage that this amplifying circuit represents is more obvious.
Description
Technical field
The invention belongs to amplifier technique field, particularly relate to a kind of without medium high frequency easily extensible high-performance broadband orthoron.
Background technology
Along with the fast development of millimeter-wave technology in fields such as imaging, radar, electronic countermeasures, radiometers and extensive use, also just more aobvious urgent to the demand of high performance millimeter wave solid-state amplifier, broadband millimeter-wave solid-state power amplifier is as the important component part of millimeter wave front end of emission, and its importance is self-evident.Meanwhile, along with the fast development of radar, electronic countermeasures and wireless communication technology, be all the technical indicator of solid-state amplifier is had higher requirement in wideband operation characteristic or in efficiency, high-performance etc.As higher in operating frequency, bandwidth is wider, efficiency is better, stability is stronger and noise factor that is low noise amplifier is lower etc.Along with the rising of frequency, millimeter-wave systems inevitably selects waveguide as transmission line, one is that waveguide can expand to higher frequency, two is that in signals transmission, path Insertion Loss is less, therefore also become the critical component of millimeter wave radio frequency system based on the orthoron of waveguide transmission line, the technical indicators such as its efficiency, broadband, gain, noise factor are directly connected to task performance and the information quality of the system such as radar, communication.The scheme that orthoron mainly adopts in design at present has two kinds, design one is based on probe, as shown in Figure 1, millimeter-wave signal is inputted by input waveguide, be coupled to the input port such as amplification chip or triode through microstrip probe, be coupled to output waveguide by microstrip probe after signal amplifies and export.Design two is the designs based on fin line, and as shown in Figure 2, the millimeter-wave signal inputted in the waveguide, through opposite, two fin line transfers to the input port such as amplification chip or triode, and signal transfers to output waveguide by fin line after amplifying again.Scheme one or scheme two are all based on dielectric substrate in the design of orthoron, dielectric substrate is in order to realize the conversion of waveguide to planar circuit, the hybrid integrated of amplification chip is realized in waveguide cavity, above two schemes is due to the introducing of dielectric substrate, when causing its frequency expansion to more than 67GHz and even hundreds of GHz, the dielectric loss that medium brings can not be ignored, and the resonance simultaneously introduced because medium exists also greatly have impact on the reliability of amplifier.
By the circuit form such as fin line and probe based on dielectric substrate, complete the conversion of waveguide to planar circuit, then the input/output port of amplifier is matched, it is the technology that the design of current orthoron adopts, this technology is take dielectric substrate as carrier in design, therefore inevitably dielectric loss is introduced, and the higher loss of frequency is larger, the performance index of amplifier are also poorer, as noise factor becomes large, power output reduces, gain diminishes etc., simultaneously due to the introducing of medium, make the easier resonance of designed amplifier, have impact on broadband character and the stability of amplifier greatly.
Therefore, prior art existing defects, needs to improve.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of without medium high frequency easily extensible high-performance broadband orthoron, be intended to solution frequency more and more higher time, dielectric substrate affects increasing problem to amplifier performance.
The present invention is achieved in that a kind of without medium high frequency easily extensible high-performance broadband orthoron, comprises epicoele, plate and cavity of resorption; Described plate is positioned at the mid portion of described epicoele and described cavity of resorption; Described cavity of resorption broadside has a metal ridge, and described metal ridge forms the uneven transformational structure to balancing together with described plate, realizes the conversion of waveguide field mode to co-planar waveguide field mode; The combination of described epicoele, plate and cavity of resorption is in aggregates.
Further, described epicoele has a resonant slots, and described resonant slots is positioned at the middle part that epicoele and cavity of resorption match.
Further, described epicoele and the described cavity of resorption bolt through-hole that all has four positions corresponding.
Further, described orthoron also comprises four gim pegs, and described gim peg is combined into one epicoele and cavity of resorption by four bolt through-holes.
Further, by length and the width of adjustable plate film trap, and coordinate and regulate the length of described epicoele resonant slots, the length of width and the degree of depth and cavity of resorption ridge and width, thus regulate bandwidth and the input-output adapt ation of orthoron.
Further, the resonant slots of described transformational structure and described epicoele cooperatively interacts, and forms the lossless conversion of rectangular waveguide field mode to co-planar waveguide field mode.
Further, described epicoele and described cavity of resorption end face of flange all there are two pin holes perpendicular to described bolt through-hole and a bolt hole, for location and the assembling of orthoron.
Further, described epicoele has two halves manhole, and described cavity of resorption has the two halves manhole identical with epicoele, and the two halves manhole of described epicoele is combined with the circular sets of vias of the two halves of cavity of resorption and forms two bolts hole the same with described diameter of bolt hole.
Further, described plate coordinates epicoele to form the conversion of waveguide to planar circuit again after matching with cavity of resorption.
Further, described epicoele, cavity of resorption, plate are all-metal construction.
Compared with prior art, beneficial effect is in the present invention:
(1) working band is wide: by changing the size of metal ridge and upper air chamber thereof, can realize waveguide full bandwidth and cover, and in the attainable situation of processing, frequency of utilization is unrestricted.
(2) stability is high: adopt metal structure completely, completely eliminates broadband character and stability that resonance that dielectric substrate brings greatly improves amplifier.
(3) high-performance: the orthoron that invention proposes completely eliminates the dielectric loss that medium brings, can be lossless realize the conversion of waveguide to planar circuit field mode, therefore the performance index of amplifier are outstanding.
(4) compact conformation, reliability is high, be convenient to application.The circuit of amplifier and cavity are processed by the integration of precision, and therefore structure is reliable, compact, and application is convenient.
Accompanying drawing explanation
Fig. 1 is the orthoron schematic diagram based on microstrip probe that prior art provides;
Fig. 2 is the orthoron schematic diagram based on fin line that prior art provides;
Fig. 3 is the orthoron overall structure figure that the embodiment of the present invention provides;
Fig. 4 is the orthoron isolating construction figure that the embodiment of the present invention provides;
Fig. 5 is the orthoron cavity of resorption view that the embodiment of the present invention provides;
Fig. 6 is the orthoron epicoele view that the embodiment of the present invention provides.
In Figure of description, 101 represent pin, and 102 represent input waveguide mouth, and 103 represent probe, 104 represent amplifier biasing, 105 represent output waveguide mouth, and 106 represent amplifier monolithic, and 201 represent merit parallel circuit, 202 represent pin, 203 represent fin line, and 204 represent biased, and 30 indicate without medium high frequency easily extensible high-performance broadband orthoron, 301 represent pin hole, 302 represent pilot hole, and 401 represent epicoele, and 402 represent cavity of resorption, 403 represent plate, 404 represent pins, and 405 represent metal ridge, and 601 represent that attainments are shaken groove.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
According to modern high-precision process technology, innovation propose a kind of novel Amplifier Design circuit, introduce a strip metal ridge by the broadside of rectangular waveguide, under the cooperation of resonant cavity and sheet metal, realize the lossless conversion of rectangular waveguide to co-planar waveguide field mode.Amplification chip input and output coordinate foregoing circuit form, constituting with rectangular waveguide is the amplifier of transmission line, this amplifier circuit is metal structure, completely eliminate the harmful effect such as dielectric loss and resonance that dielectric substrate brings, great raising is based on the performance of the millimeter wave amplifier designed by this circuit, particularly frequency is higher, and the advantage that this amplifying circuit represents is more obvious.
As shown in Figure 3, Figure 4, a kind of without medium high frequency easily extensible high-performance broadband orthoron 30, adopt the all-metal construction that ridge waveguide and co-planar waveguide are formed jointly, in the structure shown here, first electromagnetic wave is entered by input waveguide, then through the resonant slots of gradual change ridge waveguide and top thereof, what signal was lossless transfers to co-planar waveguide place, co-planar waveguide has metal ridge and metal jointly to form, signal, after the millimeter-wave signal amplifying unit be connected with co-planar waveguide amplifies, exports to output waveguide through above-mentioned structural transmission.
Further, by appropriate design waveguide, the size of resonant slots above metal ridge and ridge, the amplifier architecture that the present invention proposes can be realized in millimeter wave and even submillimeter wave different frequency range, the design implementation of this orthoron is all-metal construction, thus the energy loss of Signal transmissions and patten transformation is greatly reduced, effectively improve amplifier such as noise factor, the performance index such as gain and power output, millimeter involves submillimeter wave amplifier components and parts when designing simultaneously, all adopt the connected mode of co-planar waveguide, therefore the present invention propose waveguide amplifier configuration can with the matched well of components and parts field mode.
Orthoron 30 forms primarily of epicoele 401, plate 403 and cavity of resorption 402 3 part, the overall structure cutaway view of this three part as shown in Figure 4, mid portion is plate 403, it is used for and the metal ridge 405 on cavity of resorption 402 broadside, form the uneven transformational structure to balance together, by cooperatively interacting together with the resonant slots of epicoele 401, realize the lossless conversion of rectangular waveguide field mode to co-planar waveguide field mode.Cutaway view after plate 403 coordinates with cavity of resorption 402 is for shown in Fig. 6, and Fig. 5 is the cutaway view of epicoele, and it forms waveguide for coordinating cavity of resorption, length, width and degree of depth equidimension simultaneously by regulating it to slot, the bandwidth of regulated amplifier and input-output adapt ation.
Described orthoron of the present invention is not owing to having dielectric substrate, eliminate the resonance that dielectric substrate brings, improve the stability of amplifier, precision in addition due to current machining is higher, therefore, relative to traditional based on the probe of dielectric substrate and the amplifying circuit of fin line, designability, the productibility of the amplifier that invention proposes and frequency range extensibility can all have great advantage.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1., without a medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, comprise epicoele, plate and cavity of resorption; Described plate is positioned at the mid portion of described epicoele and described cavity of resorption; Described cavity of resorption broadside has a metal ridge, and described metal ridge forms the uneven transformational structure to balancing together with described plate, realizes the conversion of waveguide field mode to co-planar waveguide field mode; The combination of described epicoele, plate and cavity of resorption is in aggregates, described epicoele has a resonant slots, described resonant slots is positioned at the middle part that epicoele and cavity of resorption match, and the resonant slots of described transformational structure and described epicoele cooperatively interacts, and forms the lossless conversion of rectangular waveguide field mode to co-planar waveguide field mode.
2. according to claim 1 without medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, the bolt through-hole that described epicoele and described cavity of resorption all have four positions corresponding.
3. according to claim 2 without medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, described orthoron also comprises four gim pegs, and described gim peg is combined into one epicoele and cavity of resorption by four bolt through-holes.
4. according to claim 1 without medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, by length and the width of adjustable plate film trap, and coordinate and regulate the length of described epicoele resonant slots, the length of metal ridge of width and the degree of depth and cavity of resorption and width, thus regulate bandwidth and the input-output adapt ation of orthoron.
5. according to claim 2 without medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, described epicoele and described cavity of resorption end face of flange all there are two pin holes perpendicular to described bolt through-hole and a bolt hole, for location and the assembling of orthoron.
6. according to claim 5 without medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, described epicoele has two halves manhole, described cavity of resorption has the two halves manhole identical with epicoele, and the two halves manhole of described epicoele is combined with the circular sets of vias of the two halves of cavity of resorption and forms two bolts hole the same with described diameter of bolt hole.
7. according to claim 1ly to it is characterized in that without medium high frequency easily extensible high-performance broadband orthoron, after described plate matches with cavity of resorption, coordinate epicoele to form the conversion of waveguide to planar circuit again.
8. according to claim 1 without medium high frequency easily extensible high-performance broadband orthoron, it is characterized in that, described epicoele, cavity of resorption, plate are all-metal construction.
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| CN103490594B (en) * | 2013-09-18 | 2015-10-14 | 中国电子科技集团公司第四十一研究所 | A kind of 2mm multilayer three times of frequency converters and three times of conversion methods |
| CN111181492B (en) * | 2020-01-17 | 2023-07-14 | 中国电子科技集团公司第四十一研究所 | Ultra-wideband low-loss full-waveguide double-balanced terahertz frequency multiplier |
| CN111697308A (en) * | 2020-06-24 | 2020-09-22 | 中国电子科技集团公司第四十一研究所 | Rectangular waveguide tube core manufacturing method based on SOI deep silicon etching and waveguide assembly |
| CN111697301A (en) * | 2020-07-16 | 2020-09-22 | 盛纬伦(深圳)通信技术有限公司 | Ridge waveguide-based broadband millimeter wave chip packaging structure without dielectric plate |
| CN113315473A (en) * | 2021-05-28 | 2021-08-27 | 中电科思仪科技股份有限公司 | Terahertz frequency doubling source and working method thereof |
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| CN102625962A (en) * | 2009-08-19 | 2012-08-01 | 伍比克公司 | Precision waveguide interface |
| CN202363569U (en) * | 2011-11-10 | 2012-08-01 | 华南理工大学 | Broadband waveguide traveling wave power synthesis amplifier |
| CN102739170A (en) * | 2012-06-21 | 2012-10-17 | 合肥工业大学 | High-frequency structure for THz power amplifier |
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| US5760650A (en) * | 1994-09-26 | 1998-06-02 | Endgate Corporation | Coplanar waveguide amplifier |
| CN102084538A (en) * | 2008-07-07 | 2011-06-01 | 希达尔天线顾问股份公司 | Waveguides and transmission lines in gaps between parallel conducting surfaces |
| CN101651074A (en) * | 2009-07-22 | 2010-02-17 | 电子科技大学 | Ridge loading zigzag waveguide slow wave line |
| CN102625962A (en) * | 2009-08-19 | 2012-08-01 | 伍比克公司 | Precision waveguide interface |
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Effective date of registration: 20190417 Address after: 266000 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee after: China Electronics Technology Instrument and Meter Co., Ltd. Address before: 266000 No. 98 Xiangjiang Road, Qingdao economic and Technological Development Zone, Shandong Patentee before: The 41st Institute of CETC |
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Address after: Huangdao Xiangjiang Road 266555 Shandong city of Qingdao Province, No. 98 Patentee after: CLP kesiyi Technology Co.,Ltd. Address before: 266000 No. 98 Xiangjiang Road, Huangdao District, Shandong, Qingdao Patentee before: CHINA ELECTRONIC TECHNOLOGY INSTRUMENTS Co.,Ltd. |
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