CN103296187B - A kind of encapsulating structure driving high-voltage chip for LED alternating-current - Google Patents
A kind of encapsulating structure driving high-voltage chip for LED alternating-current Download PDFInfo
- Publication number
- CN103296187B CN103296187B CN201310222475.0A CN201310222475A CN103296187B CN 103296187 B CN103296187 B CN 103296187B CN 201310222475 A CN201310222475 A CN 201310222475A CN 103296187 B CN103296187 B CN 103296187B
- Authority
- CN
- China
- Prior art keywords
- pressure pin
- spacing
- fin
- chip
- high pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The invention discloses a kind of encapsulating structure driving high-voltage chip for LED alternating-current, it comprises rectangular chip body, the back side of chip body is provided with multiple superhigh pressure pin, multiple high pressure pin, multiple low pressure pin, wherein, spacing between superhigh pressure pin, spacing between high pressure pin, spacing between superhigh pressure pin and fin, spacing between high pressure pin and fin is all greater than the spacing between low pressure pin, namely the spacing between superhigh pressure pin, spacing between high pressure pin, spacing between superhigh pressure pin and fin, spacing between high pressure pin and fin is all larger, thus make chip of the present invention meet withstand voltage and safety requirement, the substrate at the back side of chip body is fitted with fin, makes chip of the present invention by fin quick heat radiating, improves radiating efficiency, improves radiating effect.
Description
Technical field
The present invention relates to chip encapsulation technology field, particularly relate to a kind of encapsulating structure driving high-voltage chip for LED alternating-current.
Background technology
LED(LightEmittingDiode, light-emitting diode) be adopt semi-conducting material as the light source of new generation of electrical-optical transfer medium, there is the features such as energy-saving and environmental protection, the life-span is long, volume is little, main flow illumination will be become substituting electricity-saving lamp soon.Sequentially implement along with pin policy is prohibited in global incandescent lamp cut-off, LED illumination lamp is by the opportunity in the face of replacing incandescent lamp, and market scale is up to hundreds billion of.
Generally be applied in the LED drive system in LED illumination lamp, usually need to use LED drive chip to drive LED, and existing LED drive chip is mostly low-voltage chip design, this low-voltage driving chip resistance to pressure is poor, radiating effect is bad.Be high pressure Direct driver because LED alternating-current drives, different design will be caused to close safety requirement, particularly pin when being greater than 8 if adopt general package design, be difficult to especially meet safety and cooling requirements, the encapsulation do not matched.
Summary of the invention
The object of the invention is to provide a kind of encapsulating structure driving high-voltage chip for LED alternating-current that can meet high withstand voltage, high heat radiation, many pins and safety and require for the deficiencies in the prior art.
To achieve these goals, the invention provides a kind of encapsulating structure driving high-voltage chip for LED alternating-current, it comprises rectangular chip body, the back side of chip body is provided with multiple superhigh pressure pin, multiple high pressure pin, multiple low pressure pin, superhigh pressure pin is arranged at the top at the chip body back side, high pressure pin is arranged at the left side and the right at the chip body back side, low pressure pin is arranged at the following of the chip body back side, spacing between superhigh pressure pin, spacing between high pressure pin, spacing between superhigh pressure pin and fin, spacing between high pressure pin and fin is all greater than the spacing between low pressure pin, the substrate at the back side of chip body is fitted with fin.
Preferably, the spacing between described superhigh pressure pin is 1.5mm, and the spacing between superhigh pressure pin and fin is 1.5mm.
Preferably, the spacing between described high pressure pin is 1.5mm, and the spacing between high pressure pin and fin is 1.25mm.
Preferably, described chip body adopts QFN encapsulation.
Beneficial effect of the present invention is: the present invention is used for the encapsulating structure that LED alternating-current drives high-voltage chip, it comprises rectangular chip body, the back side of chip body is provided with multiple superhigh pressure pin, multiple high pressure pin, multiple low pressure pin, superhigh pressure pin is arranged at the top at the chip body back side, high pressure pin is arranged at the left side and the right at the chip body back side, low pressure pin is arranged at the following of the chip body back side, spacing between superhigh pressure pin, spacing between high pressure pin, spacing between superhigh pressure pin and fin, spacing between high pressure pin and fin is all greater than the spacing between low pressure pin, namely the spacing between superhigh pressure pin, spacing between high pressure pin, spacing between superhigh pressure pin and fin, spacing between high pressure pin and fin is all larger, thus make chip of the present invention meet withstand voltage and safety requirement, the substrate at the back side of chip body is fitted with fin, makes chip of the present invention by fin quick heat radiating, improves radiating efficiency, improves radiating effect.
Accompanying drawing explanation
Fig. 1 is vertical view of the present invention.
Fig. 2 is upward view of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Please refer to Fig. 1 and Fig. 2, the present invention is used for the encapsulating structure that LED alternating-current drives high-voltage chip, it comprises rectangular chip body 1, the back side of chip body 1 is provided with multiple superhigh pressure pin 2(and PIN), multiple high pressure pin 3, multiple low pressure pin 4, superhigh pressure pin 2 is arranged at the top at chip body 1 back side, high pressure pin 3 is arranged at the left side and the right at chip body 1 back side, low pressure pin 4 is arranged at the following of chip body 1 back side, spacing between superhigh pressure pin 2, spacing between high pressure pin 3, spacing between superhigh pressure pin 2 and fin 5, spacing between high pressure pin 3 and fin 5 is all greater than the spacing between low pressure pin 4, namely the spacing between superhigh pressure pin 2, spacing between high pressure pin 3, spacing between superhigh pressure pin 2 and fin 5, spacing between high pressure pin 3 and fin 5 is all larger, wherein, spacing between low pressure pin 4 is the pin design of conventional low voltage, such as: the spacing e between low pressure pin 4 is 0.65mm or 0.5mm, thus make chip of the present invention meet withstand voltage and safety requirement, the substrate at the back side of chip body 1 is fitted with fin 5, and fin 5 is fitted in the substrate at the back side of chip body 1 by modes such as heat conductive silica gels, makes chip of the present invention by fin 5 quick heat radiating, improves radiating efficiency, improves radiating effect.
More particularly, spacing (i.e. pitch between superhigh pressure pin 2 of the present invention, be two pins central point between spacing) e1 is 1.5mm(millimeter), the spacing k1 between superhigh pressure pin 2 and fin 5 is 1.5mm, can meet 500V(volt) withstand voltage safety requirement; Spacing e2 between high pressure pin 3 is 1.5mm, and the spacing k2 between high pressure pin 3 and fin 5 is 1.25mm, can meet the withstand voltage safety requirement of 400V; And the spacing between low pressure pin 4 is the pin design of conventional low voltage, the needs of the various function PAD of chip of the present invention can be met, such as: the low pressure PAD that can connect chip; Wherein, chip body 1 adopts QFN(QuadFlatNo-lead, quad flat non-pin) encapsulation, QFN is encapsulated as one of surface mount packages, also referred to as LCC.
Control device-Part I according to GB19510.1-2009 lamp: General Requirements and safety requirements, be equal to international standard IEC61347-1-2007, it, when crest voltage 400V, requires pin minimum spacing 1.25mm; Pin minimum spacing 0.5mm is required during crest voltage 100V.Therefore, superhigh pressure pin 2 of the present invention, high pressure pin 3, low pressure pin 4 all meet above requirement, reach safety requirement.
Finally should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; although done to explain to the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (4)
1. one kind drives the encapsulating structure of high-voltage chip for LED alternating-current, it is characterized in that: comprise rectangular chip body, the back side of chip body is provided with multiple superhigh pressure pin, multiple high pressure pin, multiple low pressure pin, superhigh pressure pin is arranged at the top at the chip body back side, high pressure pin is arranged at the left side and the right at the chip body back side, low pressure pin is arranged at the following of the chip body back side, spacing between the central point of adjacent two superhigh pressure pins, spacing between the central point of adjacent two high pressure pins, spacing between the edge of superhigh pressure pin and the edge of fin, spacing between the edge of high pressure pin and the edge of fin is all greater than the spacing between the central point of adjacent two low pressure pins, the substrate at the back side of chip body is fitted with fin.
2. the encapsulating structure driving high-voltage chip for LED alternating-current according to claim 1, it is characterized in that: the spacing between the central point of described adjacent two superhigh pressure pins is 1.5mm, and the spacing between the edge of superhigh pressure pin and the edge of fin is 1.5mm.
3. the encapsulating structure driving high-voltage chip for LED alternating-current according to claim 1, it is characterized in that: the spacing between the central point of described adjacent two high pressure pins is 1.5mm, and the spacing between the edge of high pressure pin and the edge of fin is 1.25mm.
4. the encapsulating structure driving high-voltage chip for LED alternating-current according to claim 1-3 any one, is characterized in that: described chip body adopts QFN encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310222475.0A CN103296187B (en) | 2013-06-06 | 2013-06-06 | A kind of encapsulating structure driving high-voltage chip for LED alternating-current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310222475.0A CN103296187B (en) | 2013-06-06 | 2013-06-06 | A kind of encapsulating structure driving high-voltage chip for LED alternating-current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103296187A CN103296187A (en) | 2013-09-11 |
| CN103296187B true CN103296187B (en) | 2016-01-20 |
Family
ID=49096763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310222475.0A Active CN103296187B (en) | 2013-06-06 | 2013-06-06 | A kind of encapsulating structure driving high-voltage chip for LED alternating-current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103296187B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681517A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Multi-chip QFN (Quad Flat No Lead) package suitable for LED (Light Emitting Diode) illuminating application |
| CN104779234B (en) * | 2014-01-10 | 2018-03-20 | 万国半导体股份有限公司 | Suppress the semiconductor devices and preparation method of creepage phenomenon |
| TWI623079B (en) * | 2017-03-21 | 2018-05-01 | 笙泉科技股份有限公司 | Circuit Package |
| CN108666290B (en) * | 2017-03-27 | 2020-04-28 | 笙泉科技股份有限公司 | Circuit packaging piece |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330070A (en) * | 2008-05-04 | 2008-12-24 | 北京巨数数字技术开发有限公司 | Drive chip for LED |
| CN102931182A (en) * | 2012-11-12 | 2013-02-13 | 杭州士兰微电子股份有限公司 | Packaging device of compact single-phase integrated drive circuit and single-phase integrated drive circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6910812B2 (en) * | 2001-05-15 | 2005-06-28 | Peregrine Semiconductor Corporation | Small-scale optoelectronic package |
-
2013
- 2013-06-06 CN CN201310222475.0A patent/CN103296187B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330070A (en) * | 2008-05-04 | 2008-12-24 | 北京巨数数字技术开发有限公司 | Drive chip for LED |
| CN102931182A (en) * | 2012-11-12 | 2013-02-13 | 杭州士兰微电子股份有限公司 | Packaging device of compact single-phase integrated drive circuit and single-phase integrated drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103296187A (en) | 2013-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103296187B (en) | A kind of encapsulating structure driving high-voltage chip for LED alternating-current | |
| CN203707181U (en) | Light emitting diode packaging body | |
| CN202884753U (en) | Light-emitting diode (LED) car light | |
| CN204005422U (en) | A kind of liquid cooling lamp | |
| CN104393160B (en) | Six-pin 5050 LED lamp welding pad | |
| CN203850340U (en) | LED structure | |
| CN103928601B (en) | A kind of LED module | |
| CN204026589U (en) | A kind of LED cartridge type radiator | |
| CN203950803U (en) | Luminescent device | |
| CN203225277U (en) | High-power LED packaging structure | |
| CN203363740U (en) | Large-angle light-emitting diode (LED) bulb lamp | |
| CN203395652U (en) | LED (Light-Emitting Diode) lamp bead | |
| CN102022668B (en) | Ventilating chiasmatype external radiation LED (Light Emitting Diode) street lamp | |
| CN204573711U (en) | A kind of many fluorescent tubes LED | |
| CN205048393U (en) | Whole light emitting module that encapsulates of ACLED | |
| CN205014222U (en) | Wide angle illumination LED car lamp | |
| CN203398152U (en) | Led | |
| CN203395650U (en) | LED (Light-Emitting Diode) lamp bead | |
| CN202927798U (en) | High-efficiency radiator of LED (Light Emitting Diode) bulb lamp | |
| CN203010389U (en) | Rectangular LED (light emitting diode) spotlight | |
| CN208817125U (en) | A kind of polychrome one LED light source | |
| CN203549741U (en) | Integrated LED radiator | |
| CN204289532U (en) | A kind of light-emitting diode laminating radiator structure | |
| CN209169191U (en) | A kind of heat radiating type aluminum substrate | |
| CN205746235U (en) | High-power LED illuminating lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN BOYONG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: DONGGUAN BOYONG TECHNOLOGY CO., LTD. Effective date: 20150604 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20150604 Address after: 518054 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A (located in Shenzhen Qianhai business secretary Co. Ltd.) Applicant after: SHENZHEN BOYONG TECHNOLOGY CO., LTD. Address before: 523808 Guangdong province Dongguan City Songshan Lake Industrial Road, building 6 floor 2 Songhu branch Applicant before: Dongguan Boyong Electronic Technology Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191030 Address after: 314100 east side of No.33, sanjibang, Huitong village, Huimin street, Jiashan County, Jiaxing City, Zhejiang Province Patentee after: Jiashan Lianrui Electronic Technology Co., Ltd Address before: 518054 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A (located in Shenzhen Qianhai business secretary Co. Ltd.) Patentee before: SHENZHEN BOYONG TECHNOLOGY CO., LTD. |