CN103296158A - Doped GaN film growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of doped GaN film - Google Patents
Doped GaN film growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of doped GaN film Download PDFInfo
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- CN103296158A CN103296158A CN2013102146728A CN201310214672A CN103296158A CN 103296158 A CN103296158 A CN 103296158A CN 2013102146728 A CN2013102146728 A CN 2013102146728A CN 201310214672 A CN201310214672 A CN 201310214672A CN 103296158 A CN103296158 A CN 103296158A
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Abstract
The invention discloses a doped GaN film growing on a La0.3Sr1.7AlTaO6 substrate. The doped GaN film comprises a GaN buffer layer growing on the La0.3Sr1.7AlTaO6 substrate, an undoped GaN layer growing on the GaN buffer layer and a doped GaN film growing on the undoped GaN layer. The doped GaN film is an n-type doped GaN film or a p-type doped GaN film. The invention further discloses a manufacturing method of the doped GaN film growing on the La0.3Sr1.7AlTaO6 substrate. Compared with the prior art, the doped GaN film growing on the La0.3Sr1.7AlTaO6 substrate and the manufacturing method of the doped GaN film have the advantages of simple growing process and low manufacturing cost. Besides, the manufactured n-type or p-type doped film has low defect density, good crystallization quality and optical property.
Description
Technical field
The present invention relates to Doped GaN film and preparation method thereof, particularly be grown in strontium aluminate tantalum lanthanum (La
0.3Sr
1.7AlTaO
6) Doped GaN film and preparation method thereof on the substrate.
Background technology
Light-emitting diode (LED) is as a kind of novel solid lighting source and green light source, have that volume is little, power consumption is low, environmental protection, long service life, high brightness, outstanding feature such as low in calories and colorful, all have widely in fields such as outdoor lighting, commercial lighting and decorative engineerings and to use.Current, in the global warming problem day by day under the severe background, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly.Based on the low-carbon economy of low energy consumption, low pollution, low emission, will become the important directions of economic development.At lighting field, the application of LED luminous product is just attracting common people's sight, and LED must be developing tendency in future as a kind of novel green light source product, and 21st century will be to be the epoch of the novel illumination light source of representative with LED.But the application cost of present stage LED is higher, and luminous efficiency is lower, and these factors all can limit LED greatly and develop to the direction of high-efficient energy-saving environment friendly.
III hi-nitride semiconductor material GaN has extremely excellent character at electricity, optics and acoustics, is subjected to extensive concern in recent years.GaN is the direct band gap material, and sonic transmissions speed is fast, chemistry and Heat stability is good, and the thermal conductivity height, thermal coefficient of expansion is low, punctures the dielectric strength height, is to make the ideal material of LED device efficiently.At present, the luminous efficiency of GaN base LED has reached 28% and in further growth now, and this numerical value is higher than the luminous efficiency of present normally used incandescent lamp (being about 2%) or fluorescent lamp lighting systems such as (being about 10%) far away.Data statistics shows, China surpasses the Britain's power consumption in 1 year in the whole nation at present electric consumption on lighting every year more than 4,100 hundred million degree.If replace whole incandescent lamps or partly replace fluorescent lamp with LED, can save the electric consumption on lighting near half, surpass the Three Gorges Projects energy output of the whole year.Therefore the greenhouse gas emission that produces because of illumination also can reduce greatly.In addition, compare with fluorescent lamp, GaN base LED does not contain poisonous mercury element, and is about 100 times of this type of illuminations useful life.
LED will really realize extensive extensive use, needs further to improve the luminous efficiency of led chip.Though the luminous efficiency of LED has surpassed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency still is lower than sodium vapor lamp (150lm/W), unit lumens/watt on the high side.At present, the luminous efficiency of led chip is not high enough, and a main cause is owing to its Sapphire Substrate causes.Because the lattice mismatch of sapphire and GaN up to 17%, causes forming very high dislocation density in the extension GaN thin-film process, thereby has reduced the carrier mobility of material, has shortened carrier lifetime, and then has influenced the performance of GaN base device.Secondly, owing to sapphire thermal coefficient of expansion (6.63 * 10 under the room temperature
-6K
-1) than the thermal coefficient of expansion (5.6 * 10 of GaN
-6K
-1) big, thermal mismatching degree between the two is about-18.4%, and after outer layer growth finished, device is cooled to the room temperature process from epitaxially grown high temperature can produce very big compression, causes the be full of cracks of film and substrate easily.Again, because sapphire thermal conductivity low (being 25W/m.K during 100 ° of C) is difficult to the heat that produces in the chip is in time discharged, cause thermal accumlation, the internal quantum efficiency of device is reduced, finally influence the performance of device.Therefore the urgent backing material of seeking a kind of lattice coupling and matched coefficients of thermal expansion is applied to epitaxial growth GaN film.
As everyone knows, preparation high-quality n type and p-type Doped GaN film are the bases of efficient high-quality GaN base LED epitaxial wafer, and therefore epitaxial growth n and p-type Doped GaN film are focus and the difficult point of research always on the novel substrate.
Summary of the invention
For the above-mentioned shortcoming and deficiency that overcomes prior art, the object of the present invention is to provide long Doped GaN film on strontium aluminate tantalum lanthanum substrate and preparation method thereof, it is good that the Doped GaN film of preparation has a crystal mass, doping content height, the advantage that carrier mobility is high.
Purpose of the present invention is achieved through the following technical solutions:
Be grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate, comprise being grown in La
0.3Sr
1.7AlTaO
6GaN resilient coating on the substrate is grown in the non-Doped GaN layer on the GaN resilient coating, is grown in the Doped GaN film on the non-Doped GaN layer, and described Doped GaN film is n type Doped GaN film or p-type Doped GaN film.
Described La
0.3Sr
1.7AlTaO
6Substrate is epitaxial surface for 0.5～1 ° with inclined to one side (100) direction of (111) face.
The thickness of described GaN resilient coating is 50～80nm; The thickness of described non-Doped GaN layer is 200～300nm; The thickness of described n type Doped GaN film is 0.1～5 μ m; The thickness of described p-type Doped GaN film is 0.1～5 μ m.
Be grown in the preparation method of the Doped GaN film on the strontium aluminate tantalum lanthanum substrate, may further comprise the steps:
(1) substrate with and the choosing of crystal orientation: adopt La
0.3Sr
1.7AlTaO
6Substrate is epitaxial surface for 0.5～1 ° with inclined to one side (100) direction of (111) face, and the crystal epitaxial orientation closes and is: (0001) face of GaN is parallel to La
0.3Sr
1.7AlTaO
6(111) face.La
0.3Sr
1.7AlTaO
6(111) direction has the six side symmetry identical with GaN, the La of cube phase
0.3Sr
1.7AlTaO
6(111) lattice parameter is a
Cub=7.730
Thereby six sides' La
0.3Sr
1.7AlTaO
6(111) lattice parameter a
Hex=6.312
This numerical value is just approximate to be the lattice parameter (3.16-3.19 of GaN
) twice, lattice mismatch is low to moderate 0.1%, has guaranteed the lattice coupling between substrate and the extension; Because GaN and La
0.3Sr
1.7AlTaO
6Lattice mismatch is little, La
0.3Sr
1.7AlTaO
6Thermal coefficient of expansion be 5.8 * 10
-6K
-1, the thermal coefficient of expansion of GaN is 5.6 * 10
-6K
-1, the thermal mismatching degree is low to moderate 3.6%, and so low thermal mismatching degree is unfavorable for the formation of stress, helps epitaxial growth high-quality GaN film;
(2) substrate surface polishing, cleaning and annealing in process, the detailed process of described annealing is: substrate is put into annealing chamber, under 800～900 ° of C in the air atmosphere to La
0.3Sr
1.7AlTaO
6Substrate carry out annealing in process 3～5 hours then air cooling to room temperature; Annealing in process can make substrate obtain the surface of atomically flating;
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 450～550 ° of C, is 6.0～7.2 * 10 at the pressure of reative cell
-5Pa, V/III value are 50～60, growing GaN resilient coating under the condition of the speed of growth 0.4～0.6ML/s; At 450～550 ° of C grown buffer layers, can effectively suppress the interfacial reaction between substrate and the film, provide abundant growth energy for epitaxial growth simultaneously;
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technology, substrate is remained on 500～600 ° of C, is 4.0～5.0 * 10 at the pressure of reative cell
-5Pa, V/III value are 30～40, the speed of growth is under 0.6～0.8ML/s condition, the non-Doped GaN layer of GaN resilient coating growth that obtains in step (3);
(5) epitaxial growth of n type Doped GaN film or p-type Doped GaN film:
N type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 650～750 ° of C, chamber pressure is 5.0～6.0 * 10
-5Pa, V/III value are 40～50, adopt Si as n type doped source, and the speed of growth is 0.6～0.8ML/s; N type Doped GaN thin film electronic concentration 1.0 * 10
17～5.0 * 10
19Cm
-3
P-type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 650～750 ° of C, chamber pressure is 5.0～6.0 * 10
-5Pa, V/III value are 40～50, adopt Mg as the p-type doped source, and the speed of growth is 0.6～0.8ML/s, p-type Doped GaN film hole concentration 1.0 * 10
16～2.0 * 10
18Cm
-3
The thickness of described GaN resilient coating is 50～80nm; The GaN resilient coating that 50～80nm is thick can provide the center of forming core, for epitaxial growth high-quality GaN film next lays the foundation.
The thickness of described non-Doped GaN layer is 200～300nm; The thickness of described n type Doped GaN film is 0.1～5 μ m; The thickness of described p-type Doped GaN film is 0.1～5 μ m.
Described substrate surface polishing is specially:
At first with La
0.3Sr
1.7AlTaO
6Substrate surface polishes with diamond mud, cooperates the observation by light microscope substrate surface, after not having cut, adopts the method for chemico-mechanical polishing to carry out polishing again.
Described cleaning is specially:
With La
0.3Sr
1.7AlTaO
6Substrate was put under the deionized water room temperature ultrasonic cleaning 3～5 minutes, removed La
0.3Sr
1.7AlTaO
6Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again, dries up with high-purity drying nitrogen.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) the present invention has used La
0.3Sr
1.7AlTaO
6As substrate, La
0.3Sr
1.7AlTaO
6Substrate obtains easily, and low price is conducive to reduce production costs.
(2) the present invention has used La
0.3Sr
1.7AlTaO
6As substrate, little with lattice mismatch and the thermal mismatching of GaN film, be used for the growing GaN resilient coating and can be easier to obtain island GaN, for the non-Doped GaN film of the low defective of next step depositing high-quality is laid the groundwork.
(3) prepared n type or the p-type Doped GaN film half-peak breadth numerical value of the present invention is little, thereby thin film dislocation density is low, the crystal mass height; The high quality GaN film is conducive to mix, and can improve doping content, and the mobility of charge carrier rate can increase substantially the efficient of nitride device such as semiconductor laser, light-emitting diode and solar cell.
(4) growth technique of the present invention is unique and simple, has repeatability.
Description of drawings
Fig. 1 is the schematic cross-section that is grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate of embodiment 1 preparation;
Fig. 2 is the X ray swing curve of the prepared n type Doped GaN film of embodiment 1;
Fig. 3 is the X ray swing curve of the prepared p-type Doped GaN film of embodiment 2.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment 1
Present embodiment is grown in the preparation method of the Doped GaN film on the strontium aluminate tantalum lanthanum substrate, may further comprise the steps:
(1) substrate with and the choosing of crystal orientation: (1) substrate with and the choosing of crystal orientation: adopt La
0.xSr
1.7AlTaO
6Substrate is epitaxial surface for 0.5 ° with inclined to one side (100) direction of (111) face, and the crystal epitaxial orientation closes and is: (0001) face of GaN is parallel to La
0.3Sr
1.7AlTaO
6(111) face, namely GaN (0001) //La
0.3Sr
1.7AlTaO
6(111);
(2) substrate surface polishing, cleaning and annealing in process, the detailed process of described annealing is: substrate is put into annealing chamber, under 800 ° of C in the air atmosphere to La
0.3Sr
1.7AlTaO
6Substrate carry out annealing in process 3 hours then air cooling to room temperature;
Described substrate surface polishing is specially:
At first with La
0.3Sr
1.7AlTaO
6Substrate surface polishes with diamond mud, cooperates the observation by light microscope substrate surface, after not having cut, adopts the method for chemico-mechanical polishing to carry out polishing again;
Described cleaning is specially:
With La
0.3Sr
1.7AlTaO
6Substrate was put under the deionized water room temperature ultrasonic cleaning 3 minutes, removed La
0.3Sr
1.7AlTaO
6Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again, dries up with high-purity drying nitrogen.
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 450 ° of C, is 6.0 * 10 at the pressure of reative cell
-5Growth thickness is 50nm GaN resilient coating under the condition that Pa, V/III value are 50, the speed of growth is 0.4ML/s;
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technology, substrate is remained on 500 ° of C, is 4.0 * 10 at the pressure of reative cell
-5Pa, V/III value are 30, the speed of growth is under the 0.6ML/s condition, and growth thickness is the non-Doped GaN layer of 200nm on the GaN resilient coating that step (3) obtains;
(5) epitaxial growth of n type Doped GaN film or p-type Doped GaN film:
N type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 650 ° of C, chamber pressure is 5.0 * 10
-5Pa, V/III value are 40, adopt Si as n type doped source, and the speed of growth is 0.6ML/s; The thickness of described n type Doped GaN film is 0.1 μ m.
As shown in Figure 1, present embodiment preparation be grown in Doped GaN film on the strontium aluminate tantalum lanthanum substrate, comprise being grown in La
0.3Sr
1.7AlTaO
6GaN resilient coating 12 on the substrate 11 is grown in the non-Doped GaN layer 13 on the GaN resilient coating 12, is grown in the n type Doped GaN film 14 on the non-Doped GaN layer 13.
Fig. 2 is the X ray swing curve of the prepared n type Doped GaN film of present embodiment, can see among the figure, and half-peak breadth (FWHM) value of the X ray swing curve of GaN (0002) is lower than 231arcsec, and defect concentration is lower than 10
9Cm
-2, show at La
0.3Sr
1.7AlTaO
6(111) epitaxial growth has gone out high-quality n type Doped GaN film on the substrate.
Be that the electron concentration that Hall spectrum test obtains the n type Doped GaN of present embodiment under the 293K is 5 * 10 in temperature
18Cm
-3, electron mobility is 301cm
2/ vs.
Embodiment 2
Present embodiment is grown in the preparation method of the Doped GaN film on the strontium aluminate tantalum lanthanum substrate, may further comprise the steps:
(1) substrate with and the choosing of crystal orientation: (1) substrate with and the choosing of crystal orientation: adopt La
0.3Sr
1.7AlTaO
6Substrate is epitaxial surface for 1 ° with inclined to one side (100) direction of (111) face, and the crystal epitaxial orientation closes and is: (0001) face of GaN is parallel to La
0.3Sr
1.7AlTaO
6(111) face;
(2) substrate surface polishing, cleaning and annealing in process, the detailed process of described annealing is: substrate is put into annealing chamber, under 900 ° of C in the air atmosphere to La
0.3Sr
1.7AlTaO
6Substrate carry out annealing in process 5 hours then air cooling to room temperature;
Described substrate surface polishing is specially:
At first with La
0.3Sr
1.7AlTaO
6Substrate surface polishes with diamond mud, cooperates the observation by light microscope substrate surface, after not having cut, adopts the method for chemico-mechanical polishing to carry out polishing again;
Described cleaning is specially:
With La
0.3Sr
1.7AlTaO
6Substrate was put under the deionized water room temperature ultrasonic cleaning 5 minutes, removed La
0.3Sr
1.7AlTaO
6Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again, dries up with high-purity drying nitrogen.
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 550 ° of C, is .2 * 10 at the pressure of reative cell
-5Growth thickness is the 80nmGaN resilient coating under the condition that Pa, V/III value are 60, the speed of growth is 0.6ML/s;
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technology, substrate is remained on 600 ° of C, is 5.0 * 10 at the pressure of reative cell
-5Pa, V/III value are 40, the speed of growth is under the 0.8ML/s condition, and growth thickness is the non-Doped GaN layer of 300nm on the GaN resilient coating that step (3) obtains;
(5) epitaxial growth of n type Doped GaN film or p-type Doped GaN film:
P-type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 650 ° of C, chamber pressure is 5.0 * 10
-5Pa, V/III value are 40, adopt Mg as the p-type doped source, and the speed of growth is 0.6ML/s, and the thickness of described p-type Doped GaN film is 0.1 μ m.
Fig. 3 is the X ray swing curve of the p-type Doped GaN film of present embodiment preparation, can see among the figure that half-peak breadth (FWHM) value of the X ray swing curve of GaN (0002) is lower than 227arcsec, and defect concentration is lower than 10
9Cm
-2Show at La
0.3Sr
1.7AlTaO
6(111) epitaxial growth has gone out high-quality p-type Doped GaN film on the substrate.
Be that the hole concentration that Hall spectrum test obtains the p-type Doped GaN of present embodiment under the 293K is 5 * 10 in temperature
17Cm
-3, hole mobility is 37cm
2/ vs.
Embodiment 3
Present embodiment is except following feature, and all the other features and embodiment 1 are same:
N type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 750 ° of C, chamber pressure is 6.0 * 10
-5Pa, V/III value 50 also adopt Si as n type doped source, speed of growth 0.8ML/s.The electron concentration of the n type Doped GaN film of present embodiment preparation is 6 * 10
18Cm
-3, electron mobility is 310cm
2/ vs.
Embodiment 4
Present embodiment is except following feature, and all the other features and embodiment 2 are same:
P-type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 750 ° of C, chamber pressure is 6.0 * 10
-5Pa, V/III value 50, employing Mg are as p-type doped source, speed of growth 0.8ML/s.The hole concentration of the p-type Doped GaN film of present embodiment preparation is 6 * 10
17Cm
-3, hole mobility is 31cm
2/ vs.
Above-described embodiment is preferred implementation of the present invention; but embodiments of the present invention are not limited by the examples; other any do not deviate from change, the modification done under spiritual essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (7)
1. be grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate, it is characterized in that, comprise being grown in La
0.3Sr
1.7AlTaO
6GaN resilient coating on the substrate is grown in the non-Doped GaN layer on the GaN resilient coating, is grown in the Doped GaN film on the non-Doped GaN layer, and described Doped GaN film is n type Doped GaN film or p-type Doped GaN film.
2. the Doped GaN film that is grown on the strontium aluminate tantalum lanthanum substrate according to claim 1 is characterized in that described La
0.3Sr
1.7AlTaO
6Substrate is epitaxial surface for 0.5～1 ° with inclined to one side (100) direction of (111) face.
3. the Doped GaN film that is grown on the strontium aluminate tantalum lanthanum substrate according to claim 1 is characterized in that the thickness of described GaN resilient coating is 50～80nm; The thickness of described non-Doped GaN layer is 200～300nm; The thickness of described n type Doped GaN film is 0.1～5 μ m; The thickness of described p-type Doped GaN film is 0.1～5 μ m.
4. the described preparation method who is grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate of claim 1 is characterized in that, may further comprise the steps:
(1) substrate with and the choosing of crystal orientation: adopt La
0.3Sr
1.7AlTaO
6Substrate is epitaxial surface for 0.5～1 ° with inclined to one side (100) direction of (111) face, and the crystal epitaxial orientation closes and is: (0001) face of GaN is parallel to La
0.3Sr
1.7AlTaO
6(111) face;
(2) substrate surface polishing, cleaning and annealing in process, the detailed process of described annealing is: substrate is put into annealing chamber, under 800～900 ° of C in the air atmosphere to La
0.3Sr
1.7AlTaO
6Substrate carry out annealing in process 3～5 hours then air cooling to room temperature;
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 450～550 ° of C, is 6.0～7.2 * 10 at the pressure of reative cell
-5Growing GaN resilient coating under the condition that Pa, V/III value are 50～60, the speed of growth is 0.4～0.6ML/s;
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technology, substrate is remained on 500～600 ° of C, is 4.0～5.0 * 10 at the pressure of reative cell
-5Pa, V/III value are 30～40, the speed of growth is under 0.6～0.8ML/s condition, the non-Doped GaN layer of GaN resilient coating growth that obtains in step (3);
(5) epitaxial growth of n type Doped GaN film or p-type Doped GaN film:
N type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 650～750 ° of C, chamber pressure is 5.0～6.0 * 10
-5Pa, V/III value are 40～50, adopt Si as n type doped source, and the speed of growth is 0.6～0.8ML/s;
P-type Doped GaN growth for Thin Film technology is: adopt molecular beam epitaxial growth technology, underlayer temperature is risen to 650～750 ° of C, chamber pressure is 5.0～6.0 * 10
-5Pa, V/III value are 40～50, adopt Mg as the p-type doped source, and the speed of growth is 0.6～0.8ML/s.
5. according to the described preparation method who is grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate of claim 4, it is characterized in that the thickness of described GaN resilient coating is 50～80nm; The thickness of described non-Doped GaN layer is 200～300nm; The thickness of described n type Doped GaN film is 0.1～5 μ m; The thickness of described p-type Doped GaN film is 0.1～5 μ m.
6. according to the described preparation method who is grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate of claim 4, it is characterized in that described substrate surface polishing is specially:
At first with La
0.3Sr
1.7AlTaO
6Substrate surface polishes with diamond mud, cooperates the observation by light microscope substrate surface, after not having cut, adopts the method for chemico-mechanical polishing to carry out polishing again.
7. according to the described preparation method who is grown in the Doped GaN film on the strontium aluminate tantalum lanthanum substrate of claim 4, it is characterized in that described cleaning is specially:
With La
0.3Sr
1.7AlTaO
6Substrate was put under the deionized water room temperature ultrasonic cleaning 3～5 minutes, removed La
0.3Sr
1.7AlTaO
6Substrate surface pickup particle successively through persalt, acetone, ethanol washing, is removed surface organic matter again, dries up with drying nitrogen.
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| CN106299070A (en) * | 2016-09-30 | 2017-01-04 | 安徽三安光电有限公司 | A kind of emitting diode epitaxial layer and preparation method thereof |
| CN106384761A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof |
| CN106384762A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | Nano-pillar LED grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof |
| CN106653966A (en) * | 2016-10-31 | 2017-05-10 | 华南理工大学 | GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof |
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| CN106384761A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof |
| CN106384762A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | Nano-pillar LED grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof |
| CN106653966A (en) * | 2016-10-31 | 2017-05-10 | 华南理工大学 | GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof |
| CN106384762B (en) * | 2016-10-31 | 2019-05-14 | 华南理工大学 | The nano-pillar LED and preparation method thereof being grown on strontium aluminate tantalum lanthanum substrate |
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