CN103280486A - 一种铜铟镓硒薄膜的制备方法 - Google Patents
一种铜铟镓硒薄膜的制备方法 Download PDFInfo
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- CN103280486A CN103280486A CN2013101629035A CN201310162903A CN103280486A CN 103280486 A CN103280486 A CN 103280486A CN 2013101629035 A CN2013101629035 A CN 2013101629035A CN 201310162903 A CN201310162903 A CN 201310162903A CN 103280486 A CN103280486 A CN 103280486A
- Authority
- CN
- China
- Prior art keywords
- film
- indium gallium
- copper indium
- gallium selenide
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002360 preparation method Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000002243 precursor Substances 0.000 claims abstract description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 46
- 239000011669 selenium Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 36
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000002105 nanoparticle Substances 0.000 claims description 21
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 3
- 238000010924 continuous production Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000003708 ampul Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 239000005361 soda-lime glass Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN2013101629035A CN103280486A (zh) | 2013-05-06 | 2013-05-06 | 一种铜铟镓硒薄膜的制备方法 |
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CN2013101629035A CN103280486A (zh) | 2013-05-06 | 2013-05-06 | 一种铜铟镓硒薄膜的制备方法 |
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CN103280486A true CN103280486A (zh) | 2013-09-04 |
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CN2013101629035A Pending CN103280486A (zh) | 2013-05-06 | 2013-05-06 | 一种铜铟镓硒薄膜的制备方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109671787A (zh) * | 2019-01-08 | 2019-04-23 | 哈尔滨理工大学 | 一种无硒化过程非真空法制备的铜铟镓硒吸收层 |
CN109713061A (zh) * | 2019-01-08 | 2019-05-03 | 哈尔滨理工大学 | 一种基于溶胶凝胶法制备的铜铟镓硒吸收层 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163637A (zh) * | 2011-01-20 | 2011-08-24 | 苏州瑞晟太阳能科技有限公司 | Cigs太阳能光电池及其制备方法 |
CN102194925A (zh) * | 2010-02-26 | 2011-09-21 | 韩国电子通信研究院 | 制造薄膜光吸收层的方法及使用其制造薄膜太阳能电池的方法 |
CN102194917A (zh) * | 2010-03-03 | 2011-09-21 | 正峰新能源股份有限公司 | 非真空制作铜铟镓硒浆料的方法 |
CN102569514A (zh) * | 2012-01-04 | 2012-07-11 | 中国科学院合肥物质科学研究院 | 一种制备铜铟镓硒太阳能电池光吸收层的方法 |
-
2013
- 2013-05-06 CN CN2013101629035A patent/CN103280486A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102194925A (zh) * | 2010-02-26 | 2011-09-21 | 韩国电子通信研究院 | 制造薄膜光吸收层的方法及使用其制造薄膜太阳能电池的方法 |
CN102194917A (zh) * | 2010-03-03 | 2011-09-21 | 正峰新能源股份有限公司 | 非真空制作铜铟镓硒浆料的方法 |
CN102163637A (zh) * | 2011-01-20 | 2011-08-24 | 苏州瑞晟太阳能科技有限公司 | Cigs太阳能光电池及其制备方法 |
CN102569514A (zh) * | 2012-01-04 | 2012-07-11 | 中国科学院合肥物质科学研究院 | 一种制备铜铟镓硒太阳能电池光吸收层的方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109671787A (zh) * | 2019-01-08 | 2019-04-23 | 哈尔滨理工大学 | 一种无硒化过程非真空法制备的铜铟镓硒吸收层 |
CN109713061A (zh) * | 2019-01-08 | 2019-05-03 | 哈尔滨理工大学 | 一种基于溶胶凝胶法制备的铜铟镓硒吸收层 |
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