CN103267775A - Micro-nano-scale material seebeck coefficient online measurement method - Google Patents
Micro-nano-scale material seebeck coefficient online measurement method Download PDFInfo
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Abstract
The invention provides a micro-nano-scale material seebeck coefficient online measurement method, which comprises: heating a heat end of a measured thermopile; measuring an open circuit voltage Vout output by the measured thermopile when the measured thermopile achieves a heat stable state; adopting a CMOS temperature measurement circuit arranged on the heat end of the measured thermopile to carry out online measurement of an absolute temperature T2 of the heat end of the measured thermopile, adopting the CMOS temperature measurement circuit output 1 of the heat end to represent a voltage VT2 of the absolute temperature T2, and measuring the VT2 value; adopting another CMOS temperature measurement circuit arranged on a cold end of the measured thermopile to carry out online measurement of an absolute temperature T1 of the cold end of the measured thermopile, adopting the CMOS temperature measurement circuit output 1 of the cold end to represent a voltage VT1 of the absolute temperature T1, and measuring the VT1 value; and calculating a seebeck coefficient S of the measured thermopile, wherein the S meets the following formula: S=Vout/[n(VT2-VT1)]. The method has characteristics of stable test parameter value, and simple and reliable calculation.
Description
Technical field
The present invention relates to micro-nano thermo-electric converting material thermoelectricity capability technical field of measurement and test, be specifically related to a kind of On-line Measuring Method of micro-nano-scale material Seebeck coefficient.
Background technology
MEMS infrared eye----MEMS thermopile IR detector based on thermoelectric effect (Seebeck effect) is a kind of typical device in sensor measuring field, can be used for forming temperature sensor, gas sensor, human body sensing system, burglar alarm etc.Thermopile IR detector can be surveyed constant radiant quantity, need not to be biased voltage, need not chopper, more is applicable to mobile the application and tangible overall merits such as field studies with comparing based on the infrared eye of other principle of work (as thermoelectric type infrared eye and thermosensitive resistance type infrared eye etc.) to have.Thereby the MEMS thermopile IR detector has very important significance for realizing that more broad infrared acquisition is used, its civilian, military having a extensive future, and commercial value and market potential are very huge.
Seebeck coefficient is the important parameter of weighing the thermopair sensing sensitivity, determines its size by the material behavior that forms thermopair.The variation that produces material parameter because the MEMS material can be subjected to the influence of process makes the deviser need understand the truth of material parameter after the concrete technology.Say occasionally for thermoelectricity, need to measure the concrete numerical value of Seebeck coefficient.Because the relevant compactedness of parameter and technology, do not leave the necessary means that on-line testing that processing environment adopts common apparatus to carry out becomes parameter testing, also be the requisite measure that process repeatability is monitored.The on-line testing technology adopts the method for electrical stimuli and electrical measurement usually, by electrical quantities numerical value and targetedly computing method obtain the physical parameter of material.
Aspect the measurement of nano material Seebeck coefficient, and Kim etc. (Kim P, et al., Physical Review Letters, 2001,87:215502) measured the Seebeck coefficient of single multi-walled carbon nano-tubes, find that its value raises with temperature to increase.Boukai etc. (Boukai A, et al., Journal of Electron Materials, 2009,38:1109-1115) by measuring the Seebeck coefficient that the temperature difference and Seebeck voltage method obtain single nano-wire.(Yang B et al. such as Yang, Applied Physical Letters2002,80(10): 1758-1760) but developed the method for a kind of measure batch test nano-wire array Seebeck coefficient, studied the relation that the method that adopts the offset printing electro-deposition prepares lead telluride nano-wire Seebeck coefficient and heat treatment temperature.These method of testings all need to settle devices such as micro-heater or radiation heating to realize the temperature difference at sample one end, and the temperature element that in temperature test, needs additional heat galvanic couple or little processing to obtain, increase the complicacy of preparation process on the one hand, will increase measuring error inevitably on the other hand.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of On-line Measuring Method of micro-nano-scale material Seebeck coefficient is provided, the absolute temperature of the cold and hot end of thermoelectric pile when utilizing two CMOS temperature measuring circuits to measure hot stable state respectively, measure the open-circuit voltage of thermoelectric pile output simultaneously, by simply calculating the Seebeck coefficient of thermocouple material.The technical solution used in the present invention is:
The measurement structure of this method comprises silicon base, heating resistor, CMOS temperature measuring circuit, thermoelectric pile, and thermoelectric pile comprises that a pair of thermoelectricity is occasionally many and arrange and the thermopairs of series connection parallel, uses manyly can reduce measuring error to thermopair.Heating resistor is used for the hot junction of thermoelectric pile is heated, and the CMOS temperature measuring circuit is used for the absolute temperature of the cold and hot end of on-line measurement thermoelectric pile.Thermopair, heating resistor and CMOS temperature measuring circuit all are positioned on the silicon base.
Every pair of thermopair comprises two thermocouple bars of different micro Nano materials, and the material of two thermocouple bars can adopt as doping silicon-metal, polycrystalline silicon-metal, N-type polysilicon-P type polysilicon etc.
Described heating resistor is positioned at the zone, hot junction of thermoelectric pile, makes heating resistor generate heat by impressed voltage or electric current, thus the hot junction of even heat hot pile.
We's ratio juris is:
The Seebeck coefficient S of micro Nano material is according to formula S=Vout/[n(T2-T1)] calculate, wherein Vout is the open-circuit voltage of the thermoelectric pile output that measures when reaching hot stable state of thermoelectric pile; N is the logarithm of thermopair in the thermoelectric pile; T2 is the absolute temperature in thermoelectric pile hot junction, and T1 is the absolute temperature of thermoelectric pile cold junction.
Accurately measure temperature T 1, T2 for convenience, this method has been used the CMOS temperature measuring circuit, mainly be to have utilized triode Vbe voltage temperature characteristic, obtain the voltage V that is directly proportional with absolute temperature by two differences that work in the base stage-emitter voltage Vbe of the triode under the different current densities
PTAT
V
PTAT=△ Vbe=K*T*ln(MN)/q; Wherein: M is two triode launch site area ratio, and N is the ratio of two kinds of current densities; Wherein K is Boltzmann constant; T is absolute temperature; Q is the electrically charged amount in electron institute.(PTAT：proportional?to?absolute?temperature)
The CMOS temperature measuring circuit is further with voltage V
PTATChange with it linear voltage Vlocaltemp into; Then voltage Vlocaltemp also is directly proportional with absolute temperature.Analog to digital converter ADC will compare with voltage Vlocaltemp and not temperature variant reference voltage Vref that absolute temperature is directly proportional subsequently, by to voltage V
PTATValue is carried out the gain of pre-service and choose reasonable analog to digital converter ADC, the voltage V that makes analog to digital converter ADC output
TThe absolute temperature that can accurately represent measurand.
Use the cold junction of above-mentioned CMOS temperature measuring circuit on-line measurement thermoelectric pile and the absolute temperature in hot junction, thereby the computing formula of the Seebeck coefficient S of the micro Nano material in this method can further be expressed as S=Vout/[n(V
T2-V
T1)].
The step of the on-line measurement of micro-nano-scale material Seebeck coefficient is as follows:
A. heat the hot junction of tested thermoelectric pile, described tested thermoelectric pile comprises the thermopair of n, n 〉=1; When n greater than 1 the time, manyly arrange thermopair is parallel, and be connected in series successively;
B. when tested thermoelectric pile reaches hot stable state, measure the open-circuit voltage Vout of tested thermoelectric pile output;
C. when tested thermoelectric pile reaches hot stable state, use an absolute temperature T 2 that is arranged on the tested thermoelectric pile of the CMOS temperature measuring circuit on-line measurement hot junction in tested thermoelectric pile hot junction, the CMOS temperature measuring circuit output one in this hot junction represents the voltage V of absolute temperature T 2
T2, measure V
T2Value; Use another absolute temperature T 1 that is arranged on the tested thermoelectric pile cold junction of CMOS temperature measuring circuit on-line measurement of tested thermoelectric pile cold junction, the CMOS temperature measuring circuit output one of this cold junction represents the voltage V of absolute temperature T 1
T1, measure V
T1Value;
D. calculate the Seebeck coefficient S:S=Vout/[n(V of tested thermoelectric pile
T2-V
T1)].
Further, among the step a, the hot junction of the tested thermoelectric pile of described heating, type of heating adopts the mode of heating resistor heating power, and heating resistor is arranged on the hot junction of tested thermoelectric pile, and vertical with the thermocouple bar of the thermopair of tested thermoelectric pile; The heating resistor two ends connect hot junction first metal electrode and hot junction second metal electrode respectively, by add constant power supply to the hot junction first metal electrode and hot junction second metal electrode, make heating resistor heating.
Advantage of the present invention: test structure of the present invention is simple, and is easy to make, and its technological process and conventional cmos technology are compatible mutually, so can with the integrated preparation of thermoelectric conversion sensor spare; This method can be used for the measurement of multiple thermocouple material Seebeck coefficient, and material is widely applicable; Thermopair did not need to consider factor affecting such as radiation, convection current to the actual temperature value of cold junction and forge hot when the measurement temperature was thermally-stabilised; Adopt the CMOS temperature measuring circuit can draw accurate cold junction, hot-side temperature value, the test parameter value stabilization calculates simple and reliable.
Description of drawings
Fig. 1 is measurement structural representation of the present invention.
Fig. 2 is CMOS temperature measuring circuit schematic diagram of the present invention.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As shown in Figure 1:
The measurement structure of this method comprises silicon base, heating resistor 2, CMOS temperature measuring circuit, thermoelectric pile 1, and thermoelectric pile 1 comprises three pairs of parallel settings and the thermopairs of series connection in the present embodiment, uses manyly can reduce measuring error to thermopair.Heating resistor 2 is used for the hot junction of thermoelectric pile 1 is heated, and the CMOS temperature measuring circuit is used for the absolute temperature of on-line measurement thermoelectric pile 1 cold and hot end.Thermopair, heating resistor 2 and CMOS temperature measuring circuit all are positioned on the silicon base.
Every pair of thermopair comprises thermocouple bar 1-1 and the thermocouple bar 1-2 of different micro Nano materials, and the material of two thermocouple bars can adopt as doping silicon-metal, polycrystalline silicon-metal, N-type polysilicon-P type polysilicon etc.
Described heating resistor 2 is positioned at the zone, hot junction of thermoelectric pile 1, and vertical with the thermocouple bar of the thermopair of tested thermoelectric pile 1; Heating resistor 2 two ends connect the hot junction first metal electrode 2-1 and the hot junction second metal electrode 2-2 respectively, by add constant voltage or electric current to the hot junction the first metal electrode 2-1 and the hot junction second metal electrode 2-2, make heating resistor 2 generate heat, thus the hot junction of even heat hot pile 1.
The head and the tail two ends of the thermopair of thermoelectric pile 1 series connection connect the cold junction first metal electrode 1-3 and the cold junction second metal electrode 1-4 respectively; Can draw the open-circuit voltage Vout that exports when thermoelectric pile 1 reaches hot stable state from the cold junction first metal electrode 1-3 and the cold junction second metal electrode 1-4 measurements.
Two CMOS temperature measuring circuits are separately positioned on cold junction and the hot junction of thermoelectric pile 1.When reaching hot stable state, the voltage V of CMOS temperature measuring circuit output
T1,V
T2Absolute temperature T 1, the T2 in thermoelectric pile 1 cold junction and hot junction have been represented respectively.
Fig. 2 has provided the physical circuit figure of CMOS temperature measuring circuit.Described CMOS temperature measuring circuit comprises: amplifier OPAMP, and the inverting input of amplifier OPAMP connects the emitter of PNP triode Q1, base stage and the grounded collector of PNP triode Q1; The node that one end of the in-phase input end of amplifier OPAMP and resistance R 1 and an end of resistance R 2 are connected links to each other; The other end of resistance R 2 connects the emitter of PNP triode Q2, base stage and the grounded collector of PNP triode Q2; The other end of resistance R 1 links to each other with the drain electrode of PMOS pipe MP6, and the source electrode of PMOS pipe MP6 links to each other with PMOS pipe MP2 drain electrode; The grid of PMOS pipe MP2 links to each other with the grid of amplifier OPAMP output terminal, PMOS pipe MP1, the grid of PMOS pipe MP4 simultaneously; The source electrode of PMOS pipe MP5 links to each other with the drain electrode of PMOS pipe MP1, and the drain electrode of PMOS pipe MP5 connects the emitter of PNP triode Q1; PMOS pipe MP1, PMOS pipe MP2, PMOS pipe MP3, PMOS pipe MP4 source electrode separately is connected to power vd D; The grid of PMOS pipe MP6 links to each other with the grid of the grid of PMOS pipe MP5, PMOS pipe MP3, the grid of PMOS pipe MP7; Current source I1 is arranged between the drain electrode and ground of PMOS pipe MP3; The source electrode of PMOS pipe MP7 links to each other with the drain electrode of PMOS pipe MP4, and the drain electrode of PMOS pipe MP7 links to each other with the drain electrode of resistance R 3 one ends and NMOS pipe MN1 simultaneously; The source ground of NMOS pipe MN1, grid links to each other with drain electrode with the grid of NMOS pipe MN2; The source ground of NMOS pipe MN2; Current source I2 is arranged between the drain electrode of power vd D and NMOS pipe MN2, and the output current of current source I2 flows into NMOS pipe MN2;
PNP triode Q1, Q2 when PMOS pipe MP1, MP2, MP5, MP6 and resistance R 1, R2 work, go into a band gap voltage VPTAT who is directly proportional with absolute temperature.Drain electrode at NMOS pipe MN1 produces the voltage Vlocaltemp linear with voltage VPTAT, the input end of analog signal of voltage Vlocaltemp input analog-to-digital converter ADC, and reference voltage Vref is added to the reference voltage input terminal of analog to digital converter ADC; Analog to digital converter ADC output represents the voltage V of measurand absolute temperature T
T
During measurement,
A. at first by add constant power supply to the hot junction the first metal electrode 2-1 and the hot junction second metal electrode 2-2, make heating resistor 2 heating, thereby the hot junction of heating tested thermoelectric pile 1 makes the cold and hot end of thermoelectric pile 1 produce temperature difference.Described tested thermoelectric pile 1 comprises the thermopair of n, n 〉=1; When n greater than 1 the time, manyly arrange thermopair is parallel, and be connected in series successively; N=3 in this example.
B. when tested thermoelectric pile 1 reaches hot stable state, measure the open-circuit voltage Vout of tested thermoelectric pile 1 output;
C. when tested thermoelectric pile 1 reaches hot stable state, use an absolute temperature T 2 that is arranged on the tested thermoelectric pile of CMOS temperature measuring circuit on-line measurement 1 hot junction in tested thermoelectric pile 1 hot junction, the CMOS temperature measuring circuit output one in this hot junction represents the voltage V of absolute temperature T 2
T2, measure V
T2Value; Use another absolute temperature T 1 that is arranged on tested thermoelectric pile 1 cold junction of CMOS temperature measuring circuit on-line measurement of tested thermoelectric pile 1 cold junction, the CMOS temperature measuring circuit output one of this cold junction represents the voltage V of absolute temperature T 1
T1, measure V
T1Value;
D. calculate the Seebeck coefficient S:S=Vout/[n(V of tested thermoelectric pile 1
T2-V
T1)].
Claims (3)
1. the On-line Measuring Method of a micro-nano-scale material Seebeck coefficient is characterized in that, comprising:
A. heat the hot junction of tested thermoelectric pile (1), described tested thermoelectric pile (1) comprises the thermopair of n, n 〉=1; When n greater than 1 the time, manyly arrange thermopair is parallel, and be connected in series successively;
B. when tested thermoelectric pile (1) when reaching hot stable state, measure the open-circuit voltage Vout of tested thermoelectric pile (1) output;
C. when tested thermoelectric pile (1) when reaching hot stable state, use an absolute temperature T 2 that is arranged on the tested thermoelectric pile of CMOS temperature measuring circuit on-line measurement (1) hot junction in tested thermoelectric pile (1) hot junction, the CMOS temperature measuring circuit output one in this hot junction represents the voltage V of absolute temperature T 2
T2, measure V
T2Value; Use another absolute temperature T 1 that is arranged on the tested thermoelectric pile of CMOS temperature measuring circuit on-line measurement (1) cold junction of tested thermoelectric pile (1) cold junction, the CMOS temperature measuring circuit output one of this cold junction represents the voltage V of absolute temperature T 1
T1, measure V
T1Value;
D. calculate the Seebeck coefficient S:S=Vout/[n(V of tested thermoelectric pile (1)
T2-V
T1)].
2. the On-line Measuring Method of micro-nano-scale material Seebeck coefficient as claimed in claim 1, it is characterized in that: the hot junction of the tested thermoelectric pile of described heating (1), type of heating adopts the mode of heating resistor (2) heating power, heating resistor (2) is arranged on the hot junction of tested thermoelectric pile (1), and vertical with the thermocouple bar of the thermopair of tested thermoelectric pile (1); Heating resistor (2) two ends connect hot junction first metal electrode (2-1) and hot junction second metal electrode (2-2) respectively, by add constant power supply to the hot junction first metal electrode (2-1) and hot junction second metal electrode (2-2), make heating resistor (2) heating.
3. the On-line Measuring Method of micro-nano-scale material Seebeck coefficient as claimed in claim 1 or 2 is characterized in that, described CMOS temperature measuring circuit comprises:
Amplifier OPAMP, the inverting input of amplifier OPAMP connects the emitter of PNP triode Q1, base stage and the grounded collector of PNP triode Q1; The node that one end of the in-phase input end of amplifier OPAMP and resistance R 1 and an end of resistance R 2 are connected links to each other; The other end of resistance R 2 connects the emitter of PNP triode Q2, base stage and the grounded collector of PNP triode Q2; The other end of resistance R 1 links to each other with the drain electrode of PMOS pipe MP6, and the source electrode of PMOS pipe MP6 links to each other with PMOS pipe MP2 drain electrode; The grid of PMOS pipe MP2 links to each other with the grid of amplifier OPAMP output terminal, PMOS pipe MP1, the grid of PMOS pipe MP4 simultaneously; The source electrode of PMOS pipe MP5 links to each other with the drain electrode of PMOS pipe MP1, and the drain electrode of PMOS pipe MP5 connects the emitter of PNP triode Q1; PMOS pipe MP1, PMOS pipe MP2, PMOS pipe MP3, PMOS pipe MP4 source electrode separately is connected to power vd D; The grid of PMOS pipe MP6 links to each other with the grid of the grid of PMOS pipe MP5, PMOS pipe MP3, the grid of PMOS pipe MP7; Current source I1 is arranged between the drain electrode and ground of PMOS pipe MP3; The source electrode of PMOS pipe MP7 links to each other with the drain electrode of PMOS pipe MP4, and the drain electrode of PMOS pipe MP7 links to each other with the drain electrode of resistance R 3 one ends and NMOS pipe MN1 simultaneously; The source ground of NMOS pipe MN1, grid links to each other with drain electrode with the grid of NMOS pipe MN2; The source ground of NMOS pipe MN2; Current source I2 is arranged between the drain electrode of power vd D and NMOS pipe MN2, and the output current of current source I2 flows into NMOS pipe MN2;
The input end of analog signal of the voltage Vlocaltemp input analog-to-digital converter ADC that produces in the drain electrode of NMOS pipe MN1, reference voltage Vref is added to the reference voltage input terminal of analog to digital converter ADC; Analog to digital converter ADC output represents the voltage V of measurand absolute temperature T
T
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Application publication date: 20130828 |