CN103262238B - Circuit arrangement - Google Patents

Circuit arrangement Download PDF

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Publication number
CN103262238B
CN103262238B CN201180056369.9A CN201180056369A CN103262238B CN 103262238 B CN103262238 B CN 103262238B CN 201180056369 A CN201180056369 A CN 201180056369A CN 103262238 B CN103262238 B CN 103262238B
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China
Prior art keywords
lead
wire
circuit
substrate
circuit substrate
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Application number
CN201180056369.9A
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Chinese (zh)
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CN103262238A (en
Inventor
柴崎孝
西塔秀史
牧野高久
清水胜德
佐佐木大辅
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Publication of CN103262238A publication Critical patent/CN103262238A/en
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Publication of CN103262238B publication Critical patent/CN103262238B/en
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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Abstract

There is provided a kind of and be built-in with the miniature circuit device to the semiconductor element that big electric current switchs。In the present invention, the lead-in wire 28 and lead-in wire 30 that turn on big electric current are overlapped on circuit substrate 12。It addition, be installed with multiple ceramic substrate 22A 22F on circuit substrate 12, installed above at these ceramic substrates has transistor, diode or resistance。Further, the component such as transistor, diode is connected with lead-in wire 28 or lead-in wire 30 via metal fine。

Description

Circuit arrangement
Technical field
The present invention relates to a kind of circuit arrangement, particularly relate to the circuit arrangement having the power based semiconductor device that big electric current is switched installed above at circuit substrate。
Background technology
The structure of the mixed integrated circuit apparatus 100 of existing type is described with reference to Fig. 9。First, it is formed with conductive pattern 103 on the surface of rectangular substrate 101 via the insulating barrier 102 of thickness about 200 μm, the position desired by this conductive pattern 103 connects component and forms allocated circuit。At this, it is installed with semiconductor element 105A and chip component 105B as component。Further, the electrode being formed at semiconductor element 105A upper surface is connected with desired conductive pattern 103 via metal fine 114, and the electrode being arranged at chip component 105B two ends is fixedly installed in conductive pattern via solder。It addition, the pad that lead-in wire 104 is constituted with the conductive pattern 109 being formed from substrate 101 periphery is connected, play a role as outside terminal。Seal member 108 has the function sealing the circuit being formed at substrate 101 surface。
Housing parts 111 has approximate picture frame shape, abuts with the side of substrate 101, and thus, on substrate 101, formation is for the space of the resin 108 that is filled with a sealing。
The manufacture method of the mixed integrated circuit apparatus 100 with said structure is as follows: first, forms the conductive pattern 103 with regulation shape above the substrate 101 that the insulating barrier 102 being made up of resin at upper surface covers。Then, the component such as mounting semiconductor element 105A on substrate 101, and electrically connect conductive pattern 103 and the semiconductor element 105A of regulation。Further, the conductive pattern 103 be formed as pad shape fixedly mounts lead-in wire 104。Then, mounting shell body component 111, it is heated solidifying after injecting liquid or the sealing resin 108 of semi-solid in the space surrounded by housing parts 111, thus resin-encapsulated semiconductor element 105A and metal fine 114。
Prior art literature
Patent documentation
Patent documentation 1:(Japan) JP 2007-036014 publication
Summary of the invention
The technical task that invention to solve
But, in the mixed integrated circuit apparatus 100 with said structure, through being formed from the conductive pattern 103 of the thickness about 100 μm above substrate 101, connecting lead wire 104 and semiconductor element 105A。Therefore, when utilizing semiconductor element 105A that the big electric current of tens of Amps is switched, in order to ensure bigger current capacity, it is necessary to increase the width of conductive pattern 103, which prevent the miniaturization of mixed integrated circuit apparatus 100。
The present invention proposes in view of the above problems, present invention is primarily targeted at offer and a kind of is built-in with the miniature circuit device to the semiconductor element that big electric current switchs。
For solving the technical scheme of technical task
The circuit arrangement of the present invention is characterised by, including circuit substrate, the semiconductor element configured on described circuit substrate, the first lead-in wire electrically connected with described semiconductor element on described circuit substrate and stacked second lead-in wire that electrically connects with described semiconductor element and go between with described first at least partially。
Invention effect
Utilize the present invention, with the state insulated with circuit substrate, the be connected with built-in semiconductor element first lead-in wire and the second lead-in wire are overlapped。Thus, on circuit substrate, the occupied area of the first lead-in wire and the second lead-in wire diminishes, thus contributing to the miniaturization that device is overall。
Further, the above semiconductor element being installed on circuit substrate is not be connected with the conductive pattern on circuit substrate, but is directly connected to the above lead-in wire being arranged in circuit substrate。Consequently, because without formation conductive pattern on circuit substrate, so the problem eliminating circuit substrate and conductive pattern short circuit。
Accompanying drawing explanation
Fig. 1 indicates that the view of circuit arrangement of the present invention, and (A) is top view, and (B) is profile。
Fig. 2 is the profile at the position being provided with ceramic substrate in enlarged representation circuit arrangement of the present invention。
Fig. 3 is the top view at the position being provided with the component constituting translation circuit in enlarged representation circuit arrangement of the present invention。
Fig. 4 is the top view at the position being provided with the component constituting inverter circuit in enlarged representation circuit arrangement of the present invention。
Fig. 5 (A) represents the circuit diagram of the solar power system being provided with circuit arrangement of the present invention, and (B) is part thereof of amplification circuit diagram。
Fig. 6 indicates that the view of circuit arrangement manufacture method of the present invention, and (A) is top view, and (B) is profile, and (C) is amplification profile。
Fig. 7 indicates that the view of circuit arrangement manufacture method of the present invention, and (A) is top view, and (B) is profile, and (C) is amplification profile。
Fig. 8 indicates that the view of circuit arrangement manufacture method of the present invention, and (A) (C) is profile。
Fig. 9 indicates that the profile of the circuit arrangement of background technology。
Detailed description of the invention
The composition of mixed integrated circuit apparatus 10 as circuit arrangement one example is described referring to figs. 1 through Fig. 4。
With reference to Fig. 1, mixed integrated circuit apparatus 10 mainly includes circuit substrate 12, two of superimposed thereon lead-in wires 28 at circuit substrate 12,30, on circuit substrate 12 close to lead-in wire 28,30 configuration transistor 34 components such as grade, be fixedly installed in the housing parts 14 of the picture frame shape of the upper surface of circuit substrate 12 and be filled in the sealing resin 16 of housing parts 14 area defined。
The circuit substrate that circuit substrate 12 is is main material with aluminum (Al) or copper (Cu) etc.。When adopting the substrate being made up of aluminum as circuit substrate 12, two interareas of circuit substrate 12 are oxidized anodically film and cover。In order to improve thermal diffusivity, the thickness of circuit substrate 12 is such as in more than 0.5mm below 2.0mm left and right。It should be noted that as the material of circuit substrate 12, it would however also be possible to employ the material except metal, for instance resin material or the potteries etc. such as glass epoxy substrate can be adopted。At this, as in figure 2 it is shown, the insulating barrier 50 of thickness about 60 μm that the upper surface of the circuit substrate 12 being made up of metal is made up of resin material covers, the upper surface at this insulating barrier 50 is formed with island portion 18。
Lead-in wire 28 is installed on housing parts 14, and left side on paper, its one end exports to outside, and to be arranged in above circuit substrate 12 in the way of crossing the central part of circuit substrate 12。This lead-in wire 28 is connected to the side of the positive electrode of DC source, and the direct current power before inverter circuit is changed is by this lead-in wire 28。It addition, the width of lead-in wire 28 is such as about 7mm, the width (5mm) being formed as the lead-in wire 30 that width ratio overlaps above lead-in wire 28 is wide。Thus, the part being configured at the upper surface of the output lead 28 of lower section is made to expose such that it is able to connect metal fine in this upper surface portion exposed。
Lead-in wire 30 is installed on housing parts 14 in the way of being overlapped in above lead-in wire 28。At this, lead-in wire 30 does not expose in outside, and the conductive pattern through being formed from ceramic substrate 22D upper surface is connected with the lead-in wire 29 exporting to outside。Lead-in wire 30 is connected with the negative side of DC source via the lead-in wire 29 exposed in outside, has the function turning on (draw I and return The) direct current power inside device。At this, the thickness of lead-in wire 28,30 is such as at more than 1mm。
It addition, insulated therebetween by making the insulant of housing parts 14 be located at reference to Fig. 1 (B), lead-in wire 28 and lead-in wire 30。Specifically, the distance that lead-in wire 28 and lead-in wire 30 separate in a thickness direction is such as at more than 1mm。Further, the lower surface of lead-in wire 28 utilizes the insulant of housing parts 14 to insulate with the upper surface of substrate 12, and the thickness of this insulant is such as at more than 1mm。
On the other hand, as shown in Fig. 1 (A), the lead-in wire 31,32,33 of the lower section side being arranged on the paper of housing parts 14 is by the lead-in wire of the alternating electromotive force output through built-in inverter circuit conversion。The part that these lead-in wires expose in inside is connected with semiconductor element via metal fine。At this, in the part exposed in outside of each lead-in wire, be provided with the through hole for screw thread stop or with the veneer (オ Application ボ De) that side PCB solder connection is set。
Housing parts 14 is by by the material that resin material injection molded is picture frame shape such as epoxy resin, being provided with above-mentioned each lead-in wire。It addition, be fixedly mounted on the upper surface of the periphery of circuit substrate 12 by housing parts 14, in the space being provided above with resin enclosed transistor 34 component such as grade of circuit substrate 12。Further, the side up and down on the paper of housing parts 14 is configured with the distribution lead-in wire 40 that the control electrode with built-in semiconductor element is connected。
Ceramic substrate 22A 22G is by Al2O3(aluminium oxide) or AlN(aluminium nitride) etc. solid inorganic material formed, thickness is such as at more than 0.25mm below 1.0mm。Ceramic substrate 22 has the effect making transistor 34 mounted thereon with circuit substrate 12 insulation。Ceramic substrate 22 is fixedly installed in the structure of circuit substrate 12 will in hereinafter with reference to Fig. 2 narration。It addition, transistor 34 and diode 36 operationally produced heat dissipates to outside via ceramic substrate 22 and circuit substrate 12。
With reference to Fig. 1 (B), insert the through hole of substrate 42 near the upper end of distribution lead-in wire 40 and fixed。That is, above transistor 34 component such as grade being configured at circuit substrate 12 electrically connects with substrate 42 via distribution lead-in wire 40。Being configured with multiple signal lead 44 on substrate 42, this signal lead 44 plays a role as external connection terminals。Substrate 42 is the substrate being formed with conductive pattern at the interarea of the glass epoxy substrate that such as thickness is about 1mm。Substrate 42 can also be ceramic substrate or metal basal board。
Sealing resin 16 is made up of resin materials such as the epoxies being filled with the fillers such as aluminium oxide, is filled in the space above of the defined circuit substrate of housing parts 14 12。Further, sealing resin 16 resin seal ceramic substrate 22A etc., transistor 34, diode 36, metal fine 26, substrate 42 etc.。
With reference to Fig. 1 (A), on circuit substrate 12, it is configured with multiple ceramic substrate。Specifically, on circuit substrate 12, it is installed with seven ceramic substrate 22A 22G, and at the component having regulation installed above of each ceramic substrate 22A 22G。
Installed above at ceramic substrate 22A, 22B, 22E, 22F has the transistors such as IGBT, MOSFET and diode, and is constituted inverter circuit by these elements。Ceramic substrate 22C is provided with diode, ceramic substrate 22G is provided with the transistors such as IGBT, MOSFET, and is constituted translation circuit by these elements。It addition, be configured with the resistance for detecting current value on ceramic substrate 22D。
In the manner, the lead-in wire 28 of conducting such as 70 Amps DC currents and lead-in wire 30 are overlapped on circuit substrate 12。Thus, with compared with two lead-line configuration situation in the same plane, the areas that lead-in wire 28,30 occupies diminish, hence in so that device entirety realizes miniaturization。
It addition, in the manner, at lead-in wire 28,30 that the region of decile near the central part of circuit substrate 12 is overlapped。Configure the components such as transistor at these stacked areas adjacent that go between and be connected with lead-in wire 28,30 via metal fine。Thus, the component such as transistor is close to lead-in wire 28,30 configuration so that the line length of the metal fine connecting the two shortens such that it is able to make the resistance of bindiny mechanism diminish。
It addition, in the manner, by the lead-in wire 28 connected with the side of the positive electrode of DC source and overlapping with the lead-in wire 30 that the negative side of DC source connects and obtain bi wirering effect (ペ ア joins really)。Specifically, by make current lead-through go between 30 time produced magnetic field and current lead-through go between 28 time produced magnetic field cancel out each other, make the noise of generation diminish。
It addition, in the manner, be contained in be connected in series two transistors of inverter circuit across lead-in wire 28,30 configuration。
It addition, in the manner, via lead-in wire 28,30, the 31A 31C that cross-sectional area is big, the circuit arrangement elements such as transistor are connected to each other on circuit substrate 12, thus improving electrical characteristics。Specifically, distribution inductance is lowered, and under L load, during switch, the generation amount of the vibration of produced switching voltage and noise is suppressed。
Illustrate to be fixedly installed in ceramic substrate 22 structure of circuit substrate 12 with reference to Fig. 2。First, when circuit substrate 12 is the circuit substrate being made up of aluminum, the oxide-film 46,48 that the upper and lower surface of circuit substrate 12 is made up of the pellumina formed by anodic oxidation covers。Further, the upper surface of the circuit substrate 12 being formed with oxide-film 46 is covered by insulating barrier 50, and wherein insulating barrier 50 is made up of the resin material being filled with filler in a large number。
Being formed with island portion 18 on circuit substrate 12, this island portion 18 is thickness is that the metal membrane-coatings such as the copper of about 50 μm are etched to regulation shape and are formed。This island portion 18 uses not as the distribution making the signal of telecommunication pass through。In the manner, island portion 18 is used for improving the wellability fixedly mounting material 38 during fixed installation ceramic substrate 22。
Lower surface at ceramic substrate 22 is coated with the metal film 20 that thickness is about 250 μm。At this, metal film 20 is formed with the state being close to (ベ タ) at the whole lower surface of ceramic substrate 22。Thus, when using solder as fixed installation material 38, solder deposition well is in the whole lower surface of ceramic substrate 22。It addition, being arranged in the island portion 18 above circuit substrate 12 also deposition solder well。Therefore, via fixed installation material 38 ceramic substrate 22 firmly fixed and be installed on circuit substrate 12。Further, by using the good brazing metal of heat conductivity as fixed installation material 38, when transistor 34 works, produced heat conducts effectively to circuit substrate 12。
Upper surface at ceramic substrate 22 is formed with conductive pattern 24, and this conductive pattern 24 is thickness is that the metal membrane-coating of about 250 μm is etched to regulation shape and is formed。Further, this conductive pattern 24 is provided with transistor 34 and diode 36 via electric conductivity fixed installation materials such as solders。Conductive pattern 24 constitute install for transistor 34 component such as grade island portion, for making wiring part that each element is connected to each other and the pad etc. for jointing metal fine rule。
MOSFET, IGBT, bipolar transistor is adopted as transistor 34。In the manner, the such as current value big electric current more than an ampere is switched by transistor 34。The electrode being arranged at transistor 34 lower surface is connected with conductive pattern 24 via electric conductivity fixed installation materials such as solders。It is described below the situation adopting IGBT as transistor。
Diode 36 makes the electrode being arranged at upper surface be connected with transistor 34 via metal fine 26, and the electrode of lower surface is connected with conductive pattern 24 via electric conductivity fixed installation agent such as solders。
As specific example, when transistor 34 is IGBT, the emitter stage being arranged at transistor 34 upper surface is connected with the anode being arranged at diode upper surface via metal fine 26。The colelctor electrode being arranged at transistor 34 lower surface is connected with the negative electrode being arranged at diode lower surface via conductive pattern 24。The details of this attachment structure will in hereinafter with reference to Fig. 3 and Fig. 4 narration。
At this, the above-mentioned metal fine 26 used in the electrical connection of transistor etc. is such as the metal wire being made up of the aluminum that diameter is 150 μm～about 500 μm。Alternatively, it is also possible to adopt the belt that the metal formings such as aluminum are formed as banding to engage replace metal fine 26。
In the manner, it is provided with the insulating barrier 50 being made up of resin in the same manner as background technology at the upper surface of circuit substrate 12。The thickness of insulating barrier 50 is such as 60 μm (more than 50 μm less than 70 μm)。The material of insulating barrier 50 is identical with background technology, it is possible to be the resin materials such as the epoxy resin being filled with the fillers such as aluminium oxide in a large number。
The purpose covering circuit substrate 12 upper surface with insulating barrier 50 is in that to make island portion 18 be readily formed。Namely, although can directly form, at the upper surface of the oxide-film 46 covering circuit substrate 12 upper surface, the island portion 18 being made up of copper, but the intensity of being close in circuit substrate 12 and island portion 18 so can be made to reduce。Therefore, in the manner, by arranging the insulating barrier 50 being made up of organic material between circuit substrate 12 and island portion 18, intensity is close to circuit substrate 12 by raising island portion 18。
Compared with pressure and pressure in background technology of the insulating barrier 50 being formed relatively thin relatively low, but the island portion 18 being because being formed at insulating barrier 50 upper surface is not connected with transistor 34, so insulating barrier 50 need not be high pressure in the manner。
Further, the thermal conductivity of the relatively thin insulating barrier 50 of the manner is at more than 4W/mK, compared with the thermal conductivity of about the 200 μm thicker insulating barrier 102 in background technology, more than four times。Therefore, the heat that transistor 34 produces can dissipate via insulating barrier 50 effectively to outside。
At this, in the above description, transistor 34 and diode 36 are fixedly mounted on above the ceramic substrate 22 of insulating properties, but directly can also fixedly mount transistor 34 etc. on the conductive pattern being formed at circuit substrate 12 upper surface。
Fig. 3 illustrates to connect and compose the 1GBT(Q1 of inverter circuit in the inside of mixed integrated circuit apparatus) and the structure of diode D1。At this, installed above at ceramic substrate 22G has two IGBT(Q1)。Installed above at ceramic substrate 22C has five diodes。This, IGBT(Q1) and diode D1 across lead-in wire 28, lead-in wire 30 relative configuration。
At IGBT(Q1) the colelctor electrode that arranges of the back side be connected with the conductive pattern of ceramic substrate 22G via the electric conductivity such as solder fixed installation material, the emitter stage of its upper surface is connected with lead-in wire 30 via metal fine 26, and the grid of its upper surface is connected with distribution lead-in wire 40 via metal fine 26。Thus, IGBT(Q1) surface emitting pole 30 be connected with the negative side of DC source via lead-in wire。This, two IGBT(Q1) each electrode be connected in parallel, therefore ensure that bigger current capacity。
There is the negative electrode of five diode D1 via solder connection on ceramic substrate 22C。At the anode of diode D1 upper surface via the colelctor electrode of metal fine 26 with conductive pattern (that is, the being arranged at IGBT(Q1) back side of ceramic substrate 22G) and lead-in wire 33 connect。Further, the conductive pattern of ceramic substrate 22C is connected with lead-in wire 28 via metal fine 26。Thus, the negative electrode of diode D1 is connected with the side of the positive electrode of DC source。At this, include IGBT(Q1) etc. the composition etc. of translation circuit will in hereinafter with reference to Fig. 5 (A) explanation。
Illustrate to connect and compose the structure of each element of inverter circuit with reference to Fig. 4。At this, near the central part of circuit substrate 12, transversely overlap leaded 28 and lead-in wire 30 on paper。Lead-in wire 28 is applied with the DC voltage of transformed circuit boosting。This, IGBT(Q3) and IGBT(Q2) be connected in series between DC source and complementally switch, thus generating the alternating electromotive force with assigned frequency, will illustrate with reference to circuit diagram after this。
In the upside of the paper of lead-in wire 28,30, ceramic substrate 22F is connected to IGBT(Q3) and diode D3。IGBT(Q3) and the backplate of diode D3 be fixedly installed in, via solder, the same conductive pattern that the upper surface at ceramic substrate 22F is arranged。Therefore, it is arranged at IGBT(Q3) colelctor electrode at the back side and be arranged at the negative electrode at the diode D3 back side and be connected via the conductive pattern of ceramic substrate 22F。It addition, be arranged at IGBT(Q3) the distribution lead-in wire 40 that has with housing parts 14 sidewall via metal fine 26 of the grid of upper surface is connected。Further, IGBT(Q3) emitter stage and the anode of diode D3 30 be connected with lead-in wire via multiple metal fines 26。
It should be noted that have two IGBT(Q3 in the installed above of ceramic substrate 22F) and each electrode of two elements connect publicly。That is, two IGBT(Q3) it is connected in parallel to guarantee more current capacity。About this point, other ceramic substrates are also identical。
It addition, the conductive pattern of ceramic substrate 22F is via the metal fine 26 anode with the diode D2 being installed on ceramic substrate 22B and IGBT(Q2) emitter stage be connected, and be connected with lead-in wire 32。The metal fine 26 connecting these elements is crossed the top of lead-in wire 28,30 and is formed。
On the conductive pattern being arranged at ceramic substrate 22B upper surface, it is provided with via the electric conductivity such as solder fixed installation material and is arranged at IGBT(Q2) colelctor electrode at the back side and be installed on the negative electrode at the diode D2 back side。It addition, the conductive pattern being provided with these elements is connected with lead-in wire 28 via metal fine 26。Further, IGBT(Q2) grid go between with distribution respectively via metal fine 26 and 40 be connected。
Utilize the IGBT(Q2 that connects as described above) and IGBT(Q3) convert direct current power to alternating electromotive force。Specifically, the direct current power that lead-in wire 28 and lead-in wire 30 supply is supplied to IGBT(Q2) and IGBT(Q3)。Further, these IGBT complementally carry out based on control signal switching and generating alternating electromotive force, and these alternating electromotive forces are extremely outside via lead-in wire 33 output。
At this, with reference to Fig. 1 (A), the above component and the attachment structure thereof that are installed on ceramic substrate 22F, 22B are also identical with above-mentioned situation。That is, there are diode and transistor in the installed above of ceramic substrate 22F, 22B。Further, it is installed on the transistor AND gate of ceramic substrate 22F to be installed on the transistor of ceramic substrate 22B and be connected in series via metal fine 26。Its result, is converted into alternating electromotive force from the direct current power of lead-in wire 30, lead-in wire 28 supply through the transistor being installed on ceramic substrate 22F, 22B, and this alternating electromotive force exports to outside via lead-in wire 32。
With reference to Fig. 5, then illustrate to be provided with the circuit structure of the solar cell power generation system of above-mentioned mixed integrated circuit apparatus 10。Fig. 5 (A) is the overall circuit diagram representing solar cell power generation system。Fig. 5 (B) represents the IGBT(Q3 included by this system in detail) circuit diagram。
Electricity generation system shown in this figure includes solaode 70, solaode opening/closing portion 72, boost chopper 74, inverter 76 and relay 78,80。Utilize power supply produced by the TRT so constituted to power system 82 or self-operating load 84。It addition, be provided with boost chopper 74 part and changer 86 and inverter 76 in the mixed integrated circuit apparatus 10 of the manner。
Solaode 70 is that irradiated light converts to electric power the transducer exported, and exports direct current power。At this, illustrate only a solaode 70, but multiple solaode 70 can also be adopted in the way of being connected in series or being connected in parallel。
DC current is supplied the function to boost chopper 74 while having the produced electricity of collection solaode 70 and preventing adverse current by solaode opening/closing portion 72。
Boost chopper 74 has the function of the boost in voltage of the direct current power supplied by solaode 70。In boost chopper 74, IGBT(Q1) periodically repeat and carry out turn-on action and shutoff action, the direct current power of about the 250V voltage produced that generated electricity by solaode 70 boosts to the direct current power of about 300V。Specifically, boost chopper 74 includes the coil L1 that the lead-out terminal with solaode is connected in series and the IGBT (Q1) being connected between coil L1 and ground terminal。Further, the direct current power of coils L1 boosting is via being used as the diode D1 of counterflow element and supplying the inverter 76 to next section for smooth capacitor C1。
In the manner, the IGBT(Q1 including in boost chopper 74) and diode D1 be arranged in above ceramic substrate 22G, the 22C as shown in Fig. 1 (A)。It addition, IGBT(Q1) switch motion carry out based on via signal lead 44 shown in such as Fig. 1 (B) and distribution 40 control signals being supplied to from outside that go between。
The direct current power of boosted chopper 74 boosting is converted to the alternating electromotive force with assigned frequency by inverter 76。Inverter 76 includes two IGBT(Q2 being connected in series between the lead-out terminal of boost chopper 74) and Q3 and two IGBT(Q4 being connected in series equally) and Q5。It addition, the switch motion of these transistors is controlled by the control signal supplied from outside, thus Q2 and Q3 and Q4 and Q5 complementally carries out switch motion。Further, the alternating electromotive force by these switch motions with assigned frequency is exported from the junction point of Q2 and Q3 and the junction point of Q4 and Q5 to outside。At this, constitute the biphase inverter circuit being made up of four transistors。It should be noted that with reference to Fig. 1 (A), Q2, Q3, Q4 and Q5 is respectively arranged in ceramic substrate 22B, 22F, 22A and 22E。
The alternating electromotive force changed through inverter 76 supplies to commercial electric power system 82 or self-operating load 84。Relay 78 is installed between power system 82 and inverter 76。Under normal circumstances, relay 78 is in the conduction state, and when the exception of a wherein side being detected, relay 78 goes off state。It addition, be also provided with relay 80 between inverter 76 and self-operating load, relay 80 is utilized to disconnect power supply when unusual condition。
It addition, in the present embodiment, the element being included in boost chopper 74 and inverter 76 is fixedly installed in above ceramic substrate 22 as shown in Figure 2。Therefore, even if inverter circuit work, the upper surface in the island portion 18 formed on circuit substrate 12, without being applied with voltage, therefore will not be short-circuited between circuit substrate 12 and island portion 18。
With reference to Fig. 5 (B), being contained in the transistor of above-mentioned inverter 76 is IGBT(Q3) by two IGBT(Q31), (Q32) and four diodes D31, D32, D33, D34 with the main electrode Opposite direction connection of these transistors constitute。
IGBT(Q31) and IGBT(Q32) it is connected in parallel。Specifically, IGBT(Q31) with IGBT(Q32) grid, emitter stage and colelctor electrode be connected publicly。Thus, compared with the situation of a transistor, it is possible to obtain bigger current capacity。
It addition, the anode of diode D31, D32, D33, D34 and IGBT(Q31) and emitter stage IGBT(Q31) be connected。Further, the negative electrode of these diodes and IGBT(Q31) and colelctor electrode IGBT(Q32) be connected。
With reference to Fig. 6 to Fig. 8, the manufacture method of above-mentioned mixed integrated circuit apparatus 10 is then described。
With reference to Fig. 6, first prepare circuit substrate 12。Fig. 6 (A) indicates that the top view of this operation, Fig. 6 (B) and Fig. 6 (C) indicate that the profile of this operation。
With reference to Fig. 6 (A) and Fig. 6 (B), the circuit substrate 12 prepared is to be the circuit substrate that the metals such as aluminum thicker for about 1mm～3mm or copper are constituted by thickness。When employing aluminum is as the material of circuit substrate 12, the upper and lower surface of circuit substrate 12 is oxidized anodically film and covers。It should be noted that circuit substrate 12 is the substrate being configured to regulation shape by large scale circuit substrate is carried out punch process or grinding。
By making the Copper Foil being fitted in circuit substrate 12 upper surface be etched into regulation shape and form island portion 18A 18G。This island portion 18A 18G is not intended for the components such as transistor and installs, and is used for the wellability of the solder used when improving installation ceramic substrate described later yet。
With reference to Fig. 6 (C), when employing aluminum is as the material of circuit substrate 12, the oxide-film 46,48 that the upper and lower surface of circuit substrate 12 is made up of the pellumina generated by anodic oxidation covers。Further, the upper surface of the oxide-film 46 being formed with oxide-film 46 is covered by insulating barrier 50。The composition of insulating barrier 50 and thickness are as described above。By arranging insulating barrier 50, make the close property comprising between the insulating barrier 50 of the resin as organic material and island portion 18 good, therefore, it is possible to make island portion 18 be close to circuit substrate 12 securely。
With reference to Fig. 7, then configure ceramic substrate in the predetermined portion of circuit substrate 12。Fig. 7 (A) indicates that the top view of this operation, Fig. 7 (B) and Fig. 7 (C) are profiles。
With reference to Fig. 7 (A), the ceramic substrate 22A 22G being provided with the regulation component such as transistor, diode is fixedly mounted on above circuit substrate 12。At this, each ceramic substrate 22A 22G is fixedly installed in the upper surface being formed at the island portion 18A 18G above circuit substrate 12 in front operation。
With reference to Fig. 7 (C), the upper and lower surface of ceramic substrate 22 is formed with conductive pattern 24 and metal film 20。Further, the metal film 20 covering ceramic substrate 22 lower surface is fixedly installed in, via fixed installation materials 38 such as solders, the island portion 18 being arranged on circuit substrate 12 above。Whole of ceramic substrate 22 lower surface above arranges the metal film 20 being close to, and thus makes fixed installation material 38 be close to the whole lower surface of ceramic substrate 22。Therefore, ceramic substrate 22 engages with circuit substrate 12 securely。At this, it is possible to fixedly mount transistor 34 and diode 36 on ceramic substrate 22 in advance, it is also possible to install these elements after ceramic substrate 22 is fixedly installed in circuit substrate 12。
In this operation, it is implemented in the upper surface applying solder paste in island portion 18 and after the upper surface of this soldering paste loads ceramic substrate 22, is heated the reflow process solidified, thus ceramic substrate 22 is installed in face。At this, the metal film 20 being formed at ceramic substrate 22 lower surface is made up of metal with island portion 18 both being formed at circuit substrate 12 upper surface, thus the wellability of solder is good。Therefore, the solder melted the fixed installation material 38 formed contacts with the two whole and obtains good joint。
With reference to Fig. 8 (A), then engage housing parts 14 at the periphery of the upper surface of circuit substrate 12。As it has been described above, install output lead 28,30 and distribution lead-in wire 40 on housing parts 14 in advance。Housing parts 14 is bonded on the upper surface of circuit substrate 12 via grafting materials such as epoxy resin。
With reference to Fig. 8 (B), followed by metal fine 26, component is electrically connected with each lead-in wire。Specifically, the grid of the transistor 34 being fixedly installed in above ceramic substrate 22B is connected with distribution lead-in wire 40 via metal fine 26。It addition, the emitter stage being configured at transistor 34 upper surface is together connected with output lead 30 with the anode being arranged at diode 36 upper surface。It is connected with output lead 28 it addition, be installed on the transistor 34 above ceramic substrate 22F via metal fine 26。
In this operation, the connection of component uses the metal fine being made up of the aluminum that diameter is 150 μm～about 500 μm。Furthermore it is possible to adopt the belt using banding aluminium foil to engage to engage instead of using the lead-in wire of metal fine。
With reference to Fig. 8 (C), then the upper end of distribution lead-in wire 40 is inserted the hole portion of substrate 42。Thus, the signal lead 44 that each distribution lead-in wire 40 conductive patterns through being formed from substrate 42 surface have with substrate 42 is connected。
Then, be filled with a sealing resin 16 in the space that housing parts 14 is defined。As sealing resin 16, adopt silicones or epoxy resin。Alternatively, it is also possible to adopt the resin material being filled with the fillers such as aluminium oxide as sealing resin 16。Utilize sealing resin 16 resin enclosed transistor 34, diode 36, metal fine 26, distribution lead-in wire 40, substrate 42 etc.。
Mixed integrated circuit apparatus 10 as shown in Figure 1 is produced through above-mentioned operation。
Symbol description
10 mixed integrated circuit apparatus
12 circuit substrates
14 housing parts
16 sealing resins
18,18A, 18B, 18C, 18D, 18E, 18F, 18G island portion
20 metal films
22,22A, 22B, 22C, 22D, 22E, 22F, 22G ceramic substrate
24 conductive patterns
26 metal fines
28 lead-in wires
29 lead-in wires
30 lead-in wires
31 lead-in wires
32 lead-in wires
33 lead-in wires
34 transistors
36 diodes
38 fixed installation materials
40 distribution lead-in wires
42 substrates
44 signal leads
46 oxide-films
48 oxide-films
70 solaodes
72 solaode opening/closing portions
74 boost choppers
76 inverters
78 relays
80 relays
82 power systems
84 self-operating loads
86 changers
Q1,Q2,Q3,Q4,Q5,Q31,Q32IGBT
D1, D2, D3, D31, D32, D32, D34 diode

Claims (9)

1. a circuit arrangement, it is characterised in that including:
Circuit substrate, has the central part in periphery and described periphery；
Semiconductor element, is arranged in above described circuit substrate；
First lead-in wire, electrically connects with described semiconductor element on described circuit substrate, and described first lead-in wire crosses the described central part of described circuit substrate；
Second lead-in wire, electrically connects with described semiconductor element, and going between with described first at least partially of described second lead-in wire overlaps；
Housing parts, the picture frame shape being installed on above described circuit substrate is formed at described periphery, a part for wherein said housing parts crosses described central part, and a described part for described housing parts is under described first lead-in wire and between described first lead-in wire and described circuit substrate；
The described housing parts with described picture frame shape also has side and lower section side above on described picture frame shaped interior；
3rd lead-in wire, being arranged on top side and the lower section side of the described housing parts with described picture frame shape, wherein said semiconductor element is not connected with another lead-in wire of the part having on described circuit substrate and be not arranged on the described housing parts with described picture frame shape。
2. circuit arrangement as claimed in claim 1, it is characterised in that described semiconductor element includes the first transistor and the transistor seconds that are connected to each other,
Described the first transistor and described transistor seconds go between with described second lead-line configuration on relative position across described first。
3. circuit arrangement as claimed in claim 2, it is characterised in that described the first transistor and described transistor seconds are connected to each other via the metal fine being formed at described first lead-in wire and described second lead-in wire。
4. circuit arrangement as claimed in claim 1 or 2, it is characterised in that described first lead-in wire and described second lead-in wire state to be installed on described housing parts are arranged in above described circuit substrate。
5. circuit arrangement as claimed in claim 4, it is characterised in that described first lead-in wire and described second lead-in wire are by constituting resin material and the insulation of described circuit substrate of described housing parts。
6. circuit arrangement as claimed in claim 1 or 2, it is characterised in that described circuit substrate is the substrate being made up of metal,
Described semiconductor element mounting is on the ceramic substrate being fixedly installed in above described circuit substrate。
7. circuit arrangement as claimed in claim 6, it is characterised in that described ceramic substrate is fixedly installed in the island portion formed on described circuit substrate via solder。
8. circuit arrangement as claimed in claim 1 or 2, it is characterised in that described semiconductor element constitutes inverter circuit,
It is supplied to and converts the direct current power before alternating electromotive force via described first lead-in wire and described second lead-in wire to through described inverter circuit。
9. circuit arrangement as claimed in claim 1 or 2, it is characterised in that described semiconductor element includes making translation circuit boost from the direct current power of externally input and the inverter circuit that the described direct current power boosted converts to alternating electromotive force；
Described housing parts is provided with and makes the input of described direct current power to internal lead-in wire and make described alternating electromotive force export to outside lead-in wire。
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