CN103258972A - Method for preparing OLED minitype displayer - Google Patents
Method for preparing OLED minitype displayer Download PDFInfo
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Abstract
Disclosed is a method for preparing an OLED minitype displayer. The invention relates to the field of organic lighting, in particular to the method for preparing the OLED minitype displayer, wherein a photoresist process is removed, and the processes of manufacturing the OLED displayer are simplified. The method for preparing the OLED minitype displayer is characterized in that firstly a layer of base film is formed on a PAD interface through an organic film, then a hole injection layer, a hole transporting layer, a luminous layer, an electron transfer layer, an electron injection layer, a negative electrode layer, a sealing film layer and other evaporation deposition layers are evaporated and deposited on the PAD interface and a displayer lighting area through a masking version method, a protecting film layer is formed on the PAD interface by the evaporation deposition layers, then the PAD interface is bombarded by laser with specific wavelength, the base film and the evaporation layers on the PAD interface are removed, and finally the clean PAD interface is exposed. According to the method for preparing the OLED minitype displayer, the PAD interface is protected through a manner that the PAD interface is correspondingly evaporated with materials in the organic luminous film layer and the sealing film layer through the method of masking version.
Description
Technical field
The present invention relates to the organic light emission field, especially a kind of cancellation photoresist operation is simplified OLED display manufacturing process, can guarantee device performance simultaneously, saves production cost and the time preparation method of the OLED miniscope of enhancing productivity.
Background technology
In the OLED miniscope preparation process, first preparation reading circuit is again at mode that reading circuit adopts the mask version only order evaporation metal electrode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone at display.Many PAD interfaces are arranged on the reading circuit; after treating that the device preparation is finished; draw interface by bonding wire; it is last one technology of device preparation that bonding wire is drawn; in order to guarantee that PAD is not affected in many technology; so need just need be with the PAD interface protection before carrying out technology preparation; originally the method for protection PAD interface is after preparing metal electrode; the mode of developing by the photoetching gluing shelters from the PAD interface with photoresist; after treating that the device preparation is finished; beat behind the PAD zone by laser beam again; photoresist by the PAD surface absorbs; form the plasma that sharply expands behind the photoresist absorption energy and produce shock wave; shock wave is with the photoresist powdered of ablating, and other plated film layer materials that thereupon drive on the photoresist are ablated together, thereby reaches the effect of cleaning PAD; as patent of invention " technique for cleaning organic light-emitting display interface ", the patent No.: ZL 200810233757X.But in the photoetching gluing developing process of protection PAD, will bring some problems; the one, the metal electrode film can not alkali resistance developer solution corrosion in the process that gluing develops; second be in developing process; many chemical reactions can take place; be difficult to accurate control; insufficient meeting of developing causes photoresist residual; overdevelop then can cause the metal electrode seriously corroded; make display lighting brightness reduce; also can introduce metal oxide particle simultaneously, these residual particles can be introduced oxygen and steam, gradually the oxidation organic luminous layer; finally cause component failure, so the photoresist protection technology of cancellation PAD interface seems very necessary.
Summary of the invention
To be solved by this invention is by photoresist the PAD interface to be protected in original technology; easy corroding metal electrode film; influence display lighting brightness; even cause the problem of component failure; a kind of cancellation photoresist operation is provided; simplify OLED display manufacturing process, can guarantee the preparation method of the OLED miniscope of device performance simultaneously.
The preparation method of a kind of OLED miniscope of the present invention; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; it is characterized in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 0.5-100nm, the mode that adopts the mask version equally on the PAD interface evaporation one deck organic film as counterdie;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display;
(3) employing laser bombardment covers counterdie and the protective film on the PAD interface, exposes the PAD interface, afterwards the PAD interface is welded encapsulation, finishes the preparation work of an OLED miniscope.
Described evaporation layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete, and wherein the hole injection layer material is CuPc, MoO
3, among 1-TNATA, the 2-TNATA any one, thickness is 5-30nm; Hole transport layer material is any one among NPB, Spiro-TAD, the TDAB, and thickness is 5-30nm; The luminescent layer material is any one among Alq3, DPVBi, the PVK, and thickness is 10-50 nm; Electron transfer layer is any one among Bphen, BCP, the PBD, and thickness is 5-30 nm; The electron injecting layer material is LiF, Li
2O, Li:Alq
3In any one, thickness is 1-10 nm; Cathode layer materials is any one among Al, the Mg:Ag, and thickness is 1-10nm; The sealing film layer material is Al
2O
3, SiN, SiO
2In any one, thickness is 50-3000nm.
Described protective film thickness is 50nm-3200nm.
Described laser is the KrF laser of 248nm.
Described counterdie is organic material, adopts any one organic material in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer or the electron injecting layer.
The preparation method of a kind of OLED miniscope of the present invention; cancelled the guard method of original interface photoresist; in follow-up luminous organic material rete and the preparation of sealing rete; the mode that adopts the mask version on the corresponding also evaporation of PAD interface in organic light emission rete and the sealing rete any one or a few material realize protection to the PAD interface; afterwards with the organic light emission rete on the laser bombardment PAD of specific wavelength and sealing rete; the PAD interface is come out, finish the bonding wire craft of device at last.Processing step has been simplified in this invention, has saved a large amount of production costs and time, has reduced the introducing point of device defects, has improved device performance.
Embodiment
Embodiment 1: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 0.5nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is CuPc, and thickness is 5nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 5nm; Hole transport layer material is NPB, and thickness is 5nm; The luminescent layer material is Alq3, and thickness is 10nm; Electron transfer layer is Bphen, and thickness is 5nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Al, and thickness is 1nm; The sealing film layer material is Al
2O
3, thickness is 50nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 77nm; cover protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 2: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 10nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is 1-TNATA, and thickness is 10nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is MoO
3, thickness is 10nm; Hole transport layer material is Spiro-TAD, and thickness is 10nm; The luminescent layer material is DPVBi, and thickness is 20nm; Electron transfer layer is BCP, and thickness is 10nm; The electron injecting layer material is Li
2O, thickness are 5nm; Cathode layer materials is Mg:Ag, and thickness is 5nm; The sealing film layer material is SiN, and thickness is 100nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 160nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 3: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 20nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is 2-TNATA, and thickness is 15nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is 1-TNATA, and thickness is 20nm; Hole transport layer material is TDAB, and thickness is 30nm; The luminescent layer material is PVK, and thickness is 50nm; Electron transfer layer is PBD, and thickness is 30nm; The electron injecting layer material is Li:Alq
3, thickness is 10nm; Cathode layer materials is Al, and thickness is 10nm; The sealing film layer material is SiO
2, thickness is 100nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 250nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 4: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 30nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is Spiro-TAD, and thickness is 20nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is 2-TNATA, and thickness is 30nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is Alq3, and thickness is 30nm; Electron transfer layer is Bphen, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Mg:Ag, and thickness is 10nm; The sealing film layer material is Al
2O
3, thickness is 150nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 261nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 5: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 30nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is NPB, and thickness is 20nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is Alq3, and thickness is 30nm; Electron transfer layer is Bphen, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Al, and thickness is 10nm; The sealing film layer material is Al
2O
3, thickness is 200nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 301nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 6: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 30nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is TDAB, and thickness is 20nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is Alq3, and thickness is 40nm; Electron transfer layer is Bphen, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Al, and thickness is 10nm; The sealing film layer material is SiO
2, thickness is 250nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 361nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 7: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 30nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is Alq3, and thickness is 20nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is Alq3, and thickness is 40nm; Electron transfer layer is Bphen, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Mg:Ag, and thickness is 10nm; The sealing film layer material is SiO
2, thickness is 300nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 411nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 8: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 100nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is DPVBi, and thickness is 20nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is Alq3, and thickness is 40nm; Electron transfer layer is BCP, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Mg:Ag, and thickness is 10nm; The sealing film layer material is SiN, and thickness is 3000nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 3111nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 9: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 100nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is PVK, and thickness is 30nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is Alq3, and thickness is 40nm; Electron transfer layer is BCP, and thickness is 20nm; The electron injecting layer material is Li
2O, thickness are 1nm; Cathode layer materials is Al, and thickness is 10nm; The sealing film layer material is Al
2O
3, thickness is 1500nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 1611nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 10: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 100nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is Bphen, and thickness is 30 nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is CuPc, and thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is DPVBi, and thickness is 40nm; Electron transfer layer is PBD, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Mg:Ag, and thickness is 10nm; The sealing film layer material is SiN, and thickness is 2000nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 2111nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 11: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 100nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is BCP, and thickness is 30nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is MoO
3, thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is DPVBi, and thickness is 40nm; Electron transfer layer is BCP, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Al, and thickness is 10nm; The sealing film layer material is SiN, and thickness is 1000nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 1111nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Embodiment 12: a kind of preparation method of OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; the present invention is characterised in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 100nm, the same mode that adopts the mask version on the PAD interface evaporation one deck organic film as counterdie, this organic film is PBD, and thickness is 10nm;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display; Wherein the hole injection layer material is MoO
3, thickness is 20nm; Hole transport layer material is NPB, and thickness is 20nm; The luminescent layer material is DPVBi, and thickness is 40nm; Electron transfer layer is BCP, and thickness is 20nm; The electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is Mg:Ag, and thickness is 10nm; The sealing film layer material is SiO
2, thickness is 2000nm;
(3) above evaporation layer forms protective film at the PAD interface; this protective film thickness is 2111nm; cover counterdie and protective film on the PAD interface with the KrF laser bombardment of 248nm then; expose the PAD interface; afterwards the PAD interface is welded encapsulation, finish the preparation work of an OLED miniscope.
Claims (5)
1. the preparation method of an OLED miniscope; the OLED miniscope comprises silicon chip; be formed on display lighting zone and the PAD interface of preparation on silicon chip on the silicon chip; reach the metal electrode layer of evaporation on the display lighting zone; it is characterized in that this preparation method forms a hypoglyph with organic film at the PAD interface earlier; adopt mode evaporation hole injection layer on PAD interface and display lighting zone of mask version again; hole transmission layer; luminescent layer; electron transfer layer; electron injecting layer; evaporation layers such as cathode layer and sealed thin rete; the evaporation layer forms protective film at the PAD interface; adopt the laser bombardment PAD interface of specific wavelength afterwards again; remove counterdie and evaporation layer on the PAD interface; expose clean PAD interface, concrete steps are as follows:
(1) mode that adopts the mask version at the silicon chip for preparing PAD interface evaporation metal electrode on the display lighting zone only, the thickness of metal electrode is 0.5-100nm, the mode that adopts the mask version equally on the PAD interface evaporation one deck organic film as counterdie;
(2) mode of employing mask version evaporation layers such as order evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete on the light-emitting zone of PAD interface and display;
(3) employing laser bombardment covers counterdie and the protective film on the PAD interface, exposes the PAD interface, afterwards the PAD interface is welded encapsulation, finishes the preparation work of an OLED miniscope.
2. the preparation method of a kind of OLED miniscope as claimed in claim 1, it is characterized in that described evaporation layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode layer and sealed thin rete, wherein the hole injection layer material is CuPc, MoO
3, among 1-TNATA, the 2-TNATA any one, thickness is 5-30nm; Hole transport layer material is any one among NPB, Spiro-TAD, the TDAB, and thickness is 5-30nm; The luminescent layer material is any one among Alq3, DPVBi, the PVK, and thickness is 10-50 nm; Electron transfer layer is any one among Bphen, BCP, the PBD, and thickness is 5-30 nm; The electron injecting layer material is LiF, Li
2O, Li:Alq
3In any one, thickness is 1-10 nm; Cathode layer materials is any one among Al, the Mg:Ag, and thickness is 1-10nm; The sealing film layer material is Al
2O
3, SiN, SiO
2In any one, thickness is 50-3000nm.
3. the preparation method of a kind of OLED miniscope as claimed in claim 1 is characterized in that described protective film thickness is 50nm-3200nm.
4. the preparation method of a kind of OLED miniscope as claimed in claim 1 is characterized in that described laser is the KrF laser of 248nm.
5. the preparation method of a kind of OLED miniscope as claimed in claim 1 is characterized in that described counterdie is organic material, adopts any one organic material in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer or the electron injecting layer.
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| CN107425127A (en) * | 2017-05-11 | 2017-12-01 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate Full-color OLED micro-display device and preparation method thereof |
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| CN112467059A (en) * | 2020-11-12 | 2021-03-09 | 安徽熙泰智能科技有限公司 | Method for opening Pad of Mirco OLED, Mirco OLED and manufacturing method of Mirco OLED |
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