CN103258912A - Method for preparing micro-structure silicon avalanche diode - Google Patents
Method for preparing micro-structure silicon avalanche diode Download PDFInfo
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- CN103258912A CN103258912A CN2013101739410A CN201310173941A CN103258912A CN 103258912 A CN103258912 A CN 103258912A CN 2013101739410 A CN2013101739410 A CN 2013101739410A CN 201310173941 A CN201310173941 A CN 201310173941A CN 103258912 A CN103258912 A CN 103258912A
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Abstract
The invention discloses a method for preparing a micro-structure silicon avalanche diode. The method for preparing the micro-structure silicon avalanche diode includes the following steps: (1), mixing sulfur elements on a single crystal silicon substrate through laser ablation to obtain micro-structure silicon, (2), coating a SiO2 protective layer on the surface of the micro-structure silicon, (3) respectively leading an anode tap and a cathode tap out from the upper portion and the lower portion of the single crystal silicon substrate to manufacture the micro-structure silicon avalanche diode. A G-APD avalanche diode array detecting device can be manufactured by the micro-structure silicon avalanche diode which is manufactured through the method. The detecting device has high responsivity, single-photon detection sensitivity and picosecond-level time resolution are outstanding, and a spectral response range can be expanded to a middle-infrared band.
Description
Technical field
The invention belongs to the crystalline silicon technical field, be specifically related to a kind of preparation method of micro-structure avalanche silicon diode.
Background technology
The micro-structure silicon materials are the materials that form intermediate level by heavy doping chalcogen in element silicon, discover that micro-structure silicon can be close to the light of visible light wave range absorption fully by repeatedly reflecting and increasing light absorption face; Because impurity element forms intermediate level, also can reach more than 80% in the absorptivity of near infrared band, the detector made of ordinary silicon sill is not high in the near infrared band responsiveness at present.Micro-structure silicon is considered in fields such as photovoltaic cell, sensor measurings the huge applications prospect is arranged in the outstanding absorption characteristic of near-infrared part.
Laser ablation micro-structure silicon is by monocrystalline silicon being placed in the vacuum chamber that contains the sulphur hexafluoride background gas, shine silicon chip surface with femto-second laser, can etch peak structure at silicon chip surface, contain element sulphur in the peak structure, can be extended to middle-infrared band to the response region of light.
But do not have as yet at present the people with the micro-structure silicon materials for the manufacture of the micro-structure avalanche silicon diode.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of micro-structure avalanche silicon diode, the micro-structure avalanche silicon diode that this method is made can be made Geiger mode angular position digitizer (G-APD) avalanche diode array detection device, this device has higher responsiveness, single photon detection sensitivity and picosecond temporal resolution are outstanding, and spectral response range can be extended to middle-infrared band.
Above-mentioned purpose of the present invention is achieved by the following technical solution: a kind of preparation method of micro-structure avalanche silicon diode contains following steps:
(1) on monocrystalline substrate by laser ablation doping element sulphur, obtain micro-structure silicon;
(2) apply one deck SiO at the micro-structure silicon face
2Protective layer;
(3) draw anode tap and cathode leg respectively in the monocrystalline substrate upper and lower, make the micro-structure avalanche silicon diode.
The process of laser ablation doping element sulphur is preferably in the step of the present invention (1): crystal silicon chip is placed chamber, and regulating chamber inner pressure is by force 1 * 10
-3Below the pa, charging into sulfurous gas to chamber inner pressure is by force 0.5 ± 0.01Pa, and the adjusting laser intensity is 1.8J/cm
2, adopt laser facula scanning surface of crystalline silicon, when treating the inswept all silicon faces of laser, with the chamber that is mounted with crystal silicon chip vacuumize handle to vacuum degree be 1 * 10
-3Below the pa, charging into inert gas to chamber inner pressure is by force 0.5 ± 0.01Pa, takes out crystal silicon chip and places electric field to carry out auxiliary annealing.
Laser of the present invention is preferably femtosecond or nanosecond laser.
Sulfurous gas of the present invention is preferably SF
6Described inert gas is preferably argon gas.
The atom number that the doping of element sulphur is preferably element sulphur in the step of the present invention (1) accounts for 0.5% of the total number of silicon atom in the single crystal silicon substrate.
Anode tap passes described SiO described in the step of the present invention (3)
2Protective layer is connected with described micro-structure silicon.
The micro-structure avalanche silicon diode that the present invention can also adopt the method for above-mentioned micro-structure avalanche silicon diode to make is made the G-APD array, make the related circuit array of described G-APD array simultaneously, and described G-APD array is connected by the bridge joint mode with described gate array, make micro-structure avalanche silicon diode array.
G-APD array of the present invention is separately positioned in the different substrates with gate array.Be arranged in one of them substrate such as described G-APD array, and gate array is arranged in the another one substrate, namely independently adopt the micro-structure avalanche silicon diode to process G-APD array and corresponding gate array respectively by unified designing requirement on the substrate at two earlier, and then utilize the method for bridge joint to integrate both.
Bridge joint of the present invention is for to be connected described G-APD array face-to-face with described gate array, and the substrate in the G-APD array eroded with electrochemical method, then the blank area etching of each circuit in the gate array is come out, the blank area with each circuit is connected with the blank area of each micro-structure avalanche silicon diode in the described G-APD array at last.
Electrochemical corrosion of the present invention is that the negative electrode negative line in the micro-structure avalanche silicon diode is immersed in the electrolyte solution iron hydroxide, under the function of current, substrate surface is carried out bimatallic corrosion outside.In addition, the joint of each circuit also carries out this operation.
The present invention has following advantage: it is that the G-APD array of substrate is a kind of all solid state image detector with micro-structure silicon that the present invention adopts this, can be extended to middle-infrared band with surveying optical band, the detection noise is little, has the advantage of single photon detection sensitivity and picosecond temporal resolution concurrently.
Description of drawings
Fig. 1 is the structure chart of the micro-structure avalanche silicon diode of preparation in the embodiment of the invention 1;
Fig. 2 is the micro-structure avalanche silicon diode array that adopts the micro-structure avalanche silicon diode among the embodiment 1 to make, and wherein A mixes integrated 32 * 32 G-APD array profiles, and B is the circuit partial enlarged drawing.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
As shown in fig. 1, the preparation method of the micro-structure avalanche silicon diode that present embodiment provides contains following steps:
(1) on monocrystalline substrate by laser ablation doping element sulphur, obtain micro-structure silicon; The concrete steps of making micro-structural silicon comprise: monocrystalline silicon was placed in the acetone soln some minutes, carries out cleaning surfaces; Take out and clean the silicon chip of finishing, it is loaded on the objective table of vacuum chamber; The pressure of vacuum chamber is 10
3Pa; Open charging valve, pour background gas SF with the flow of 40sccm
6, to pressure be 0.5pa; After treating that gas pressure in vacuum is stable, open femtosecond (or nanosecond) laser, laser intensity is transferred to 1.8J/cm
2(D=20 μ m, 248nm, 25ns, namely the laser beam diameter is 20 μ m, and wavelength is 248nm, and be 25ns action time); Open automatic control console, make the femtosecond laser hot spot surface of inswept monocrystalline silicon slowly, treat the inswept all silicon faces of laser after, vacuum chamber is evacuated to 10
3Pa charges into argon gas to 0.5pa in vacuum chamber, change monocrystalline silicon over to annealing furnace rapidly.Wait to anneal after a period of time, sample is taken out.Wherein the doping of element sulphur be the atom number of element sulphur account for the total number of silicon atom in the single crystal silicon substrate 0.5%.
(2) apply one deck SiO at the micro-structure silicon face
2Protective layer;
(3) draw anode tap and cathode leg respectively in the monocrystalline substrate upper and lower, make the micro-structure avalanche silicon diode, wherein anode tap passes SiO
2Protective layer is connected with described micro-structure silicon.The micro-structure avalanche silicon diode of making comprises monocrystal silicon substrate 1 as shown in fig. 1, micro-structure silicon layer 2, SiO
2 Protective layer 3, anode tap 4 and negative electrode negative line.
As shown in Figure 2, a kind of micro-structure avalanche silicon diode array, the micro-structure avalanche silicon diode that the preparation method of micro-structure avalanche silicon diode makes among the employing embodiment 1 is made the G-APD array, make the related circuit array of G-APD array simultaneously, and the G-APD array is connected by the bridge joint mode with gate array, make micro-structure avalanche silicon diode array, shown in A figure and B figure among Fig. 2.
Wherein the G-APD array is separately positioned in the different substrates with gate array.
Bridge joint is for to be connected the G-APD array face-to-face with gate array, and the substrate in the G-APD array eroded with electrochemical method, then the blank area etching of each circuit in the gate array is come out, the blank area with each circuit is connected with the blank area of each micro-structure avalanche silicon diode in the G-APD array at last.
Electrochemical corrosion is that the negative electrode negative line in the micro-structure avalanche silicon diode is immersed in the electrolyte solution iron hydroxide, under the function of current, substrate surface is carried out bimatallic corrosion outside.
The present invention will be described more than to enumerate specific embodiment.It is pointed out that above embodiment only for the invention will be further described, does not represent protection scope of the present invention, nonessential modification and adjustment that other people prompting according to the present invention is made still belong to protection scope of the present invention.
Claims (6)
1. the preparation method of a micro-structure avalanche silicon diode is characterized in that containing following steps:
(1) on monocrystalline substrate by laser ablation doping element sulphur, obtain micro-structure silicon;
(2) apply one deck SiO at the micro-structure silicon face
2Protective layer;
(3) draw anode tap and cathode leg respectively in the monocrystalline substrate upper and lower, make the micro-structure avalanche silicon diode.
2. the preparation method of micro-structure avalanche silicon diode according to claim 1 is characterized in that: the process of laser ablation doping element sulphur is in the step (1): crystal silicon chip is placed chamber, and regulating chamber inner pressure is by force 1 * 10
-3Below the pa, charging into sulfurous gas to chamber inner pressure is by force 0.5 ± 0.01Pa, and the adjusting laser intensity is 1.8J/cm
2, adopt laser facula scanning surface of crystalline silicon, when treating the inswept all silicon faces of laser, with the chamber that is mounted with crystal silicon chip vacuumize handle to vacuum degree be 1 * 10
-3Below the pa, charging into inert gas to chamber inner pressure is by force 0.5 ± 0.01Pa, takes out crystal silicon chip and places electric field to carry out auxiliary annealing.
3. the preparation method of micro-structure avalanche silicon diode according to claim 2, it is characterized in that: described laser is femtosecond or nanosecond laser.
4. the preparation method of micro-structure avalanche silicon diode according to claim 2, it is characterized in that: described sulfurous gas is SF
6Described inert gas is argon gas.
5. the preparation method of micro-structure avalanche silicon diode according to claim 2 is characterized in that: in the step (1) doping of element sulphur be the atom number of element sulphur account for the total number of silicon atom in the single crystal silicon substrate 0.5%.
6. the preparation method of micro-structure avalanche silicon diode according to claim 2, it is characterized in that: anode tap passes described SiO described in the step (3)
2Protective layer is connected with described micro-structure silicon.
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| CN201310173941.0A CN103258912B (en) | 2013-05-13 | 2013-05-13 | A kind of preparation method of micro-structure silicon avalanche diode |
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| CN201310173941.0A CN103258912B (en) | 2013-05-13 | 2013-05-13 | A kind of preparation method of micro-structure silicon avalanche diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746041A (en) * | 2014-01-24 | 2014-04-23 | 哈尔滨工业大学 | Method for silicon substrate APD (Avalanche Photodiode) infrared sensitivity enhancement |
| CN105652259A (en) * | 2015-12-30 | 2016-06-08 | 天津大学 | Laser ranging reading sequential circuit and method based on Geiger mode APD array |
| WO2022170476A1 (en) * | 2021-02-09 | 2022-08-18 | 深圳市大疆创新科技有限公司 | Laser receiving circuit and control method therefor, ranging device, and mobile platform |
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| CN1323061A (en) * | 2000-03-30 | 2001-11-21 | 国际商业机器公司 | DC or AC electric field auxiliary annealing |
| WO2011147122A1 (en) * | 2010-05-25 | 2011-12-01 | 中国科学院微电子研究所 | Black silicon solar cell and its preparation method |
| CN102290481A (en) * | 2011-09-01 | 2011-12-21 | 中国科学院半导体研究所 | Silicon detector structure with wide spectral response range and production method thereof |
| CN102412343A (en) * | 2011-11-30 | 2012-04-11 | 中国科学院半导体研究所 | Manufacturing method of flat-type avalanche diode detector used for detecting single photon |
| CN102842651A (en) * | 2012-09-18 | 2012-12-26 | 电子科技大学 | Black silicon structure and manufacturing method thereof |
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- 2013-05-13 CN CN201310173941.0A patent/CN103258912B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323061A (en) * | 2000-03-30 | 2001-11-21 | 国际商业机器公司 | DC or AC electric field auxiliary annealing |
| WO2011147122A1 (en) * | 2010-05-25 | 2011-12-01 | 中国科学院微电子研究所 | Black silicon solar cell and its preparation method |
| CN102290481A (en) * | 2011-09-01 | 2011-12-21 | 中国科学院半导体研究所 | Silicon detector structure with wide spectral response range and production method thereof |
| CN102412343A (en) * | 2011-11-30 | 2012-04-11 | 中国科学院半导体研究所 | Manufacturing method of flat-type avalanche diode detector used for detecting single photon |
| CN102842651A (en) * | 2012-09-18 | 2012-12-26 | 电子科技大学 | Black silicon structure and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746041A (en) * | 2014-01-24 | 2014-04-23 | 哈尔滨工业大学 | Method for silicon substrate APD (Avalanche Photodiode) infrared sensitivity enhancement |
| CN103746041B (en) * | 2014-01-24 | 2016-03-30 | 哈尔滨工业大学 | A kind of method that silica-based APD infrared-sensitive strengthens |
| CN105652259A (en) * | 2015-12-30 | 2016-06-08 | 天津大学 | Laser ranging reading sequential circuit and method based on Geiger mode APD array |
| WO2022170476A1 (en) * | 2021-02-09 | 2022-08-18 | 深圳市大疆创新科技有限公司 | Laser receiving circuit and control method therefor, ranging device, and mobile platform |
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| CN103258912B (en) | 2016-04-13 |
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