CN103258761B - A kind of plasma etch chamber room controlling wafer temperature and method thereof - Google Patents
A kind of plasma etch chamber room controlling wafer temperature and method thereof Download PDFInfo
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- CN103258761B CN103258761B CN201310157252.0A CN201310157252A CN103258761B CN 103258761 B CN103258761 B CN 103258761B CN 201310157252 A CN201310157252 A CN 201310157252A CN 103258761 B CN103258761 B CN 103258761B
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Abstract
nullThe present invention provides a kind of plasma etch chamber controlling wafer temperature and method thereof，Plasma etch chamber includes: connects the upper electrode of earth lead and connects the bottom electrode of radio frequency source，And be positioned at、Electrostatic chuck between bottom electrode，It is provided with quartz window at upper base part，It is provided with heater between quartz window and upper electrode，Coolant circulation device it is provided with inside electrostatic chuck，It is provided with reflection unit between heater and upper electrode，Or scribble reflectance coating at the inner surface of the heater inner surface relative with upper electrode or side，Utilize reflectance coating or reflection unit can gather on wafer by the light of heater and be uniformly distributed at crystal column surface，Improve the utilization rate of the heat of heater，Coolant circulation device below recycling electrostatic chuck the most accurately controls the temperature of crystal column surface，Achieve the good control to wafer temperature，And the simple in construction of this plasma etching chamber，It is easily maintained.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of plasma controlling wafer temperature
Body etching cavity and method thereof.
Background technology
During plasma etching, to wafer and the etching on surface thereof, frequently with relatively higher ion body source
Realize higher etch rate, but, so will increase the thermic load of wafer.Additionally, along with wafer
Middle stacked structure becomes increasingly complex, and reaction chamber needs to undertake more technique content, due to complexity stacking knot
Including substantial amounts of conversion in structure, therefore etching technics program is more complicated, cause differential responses cavity it
Between the bigger difficulty of coupling, in order to reach the accurate coupling of reaction chamber and these processes, it is ensured that each
In individual reaction chamber, every wafer out is owned by identical performance, it is desirable to most sensitive in each technique
Technological parameter accurately control.In semiconductor etching is applied, the control of wafer temperature is a crucial ginseng
Number, the uniformity of wafer surface temperature distribution is the most important, if the temperature distributing disproportionation on crystal column surface
Even, it will to affect the etch rate of the diverse location of wafer, it is likely to result in manufacturing process unstable, thus
The structure of wafer is caused damage.
Generally in plasma etch chamber, the heater block controlling wafer temperature is arranged on bottom
Electrostatic chuck under, by electrostatic chuck is heated or lower the temperature equitemperature control, inhaled by electrostatic
Heat-conduction effect between dish and wafer, is controlled the temperature of wafer.Electrostatic chuck can be single
Region, inner and outer ring dual area, the different kind such as multizone, thus control the temperature of wafer diverse location,
But due to the drawing of contact conduction of heat, the temperature of wafer controls to make contact and non-immediate,
Cause the response time long, the problem that uniformity is poor.
Use temperature control method that is contactless and that directly act on crystal column surface it can be avoided that the problems referred to above send out
Raw.Patent US2008/0170842 A1 provides the chamber for processing substrate and for uniformly heating
Substrate is to the method for target temperature, and its chamber provided includes: at cavity, the lining being arranged in cavity
Lower supporter, is arranged on the edge ring on substrate fingernail, is used for supporting substrate, and the first thermal source is used for heating
Substrate, Secondary Heat Source is used for heating edge ring, and the first thermal source is separate with Secondary Heat Source；Wherein
In one embodiment, the first and second thermals source are arranged on the homonymy of edge ring.It is provided with at upper base part
Quartz window 18, is provided with heater block between quartz window 18 and upper electrode, heater block uses radiation heating
Mode, is the first thermal source 37 in the middle part of heater block, and heater block two ends that is to say that the both sides of the first thermal source set
Being equipped with Secondary Heat Source 38, the second heating source connects heating power controller, the first or second heat source
Can be that uviol lamp, laser two pole, resistance heater, Light-Emitting Diode or any other suitably pacify lattice
Or the heating element heater of combination.It addition, heater block can be arranged in the vertical cavity of reflector 53, cold
But during passage is arranged at reflector 53.In this patent, use contactless and directly act on adding of wafer
Hot mode, by the first thermal source 37 to the heating of substrate and the Secondary Heat Source 38 heating to edges of substrate, reaches
To the equally distributed purpose of wafer surface temperature, and it is provided with reflector 53, can be further by thermal source
Reflex on wafer.Heater block is that direct and upper electrode is connected, and reflector 53 is arranged at heater block
Both sides, so the heat of both sides can only be reflexed on wafer, and not anti-at the rear side of heater block
Beam, it is impossible to this partial heat is reflexed on wafer, and reflector 53 can not move freely, and causes
The loss of thermal source；And the method uses two thermals source to reach the purpose of Multi-point temperature-controlled, adds cavity
Structure and process complexity, add the difficulty of the maintenance to cavity.
Accordingly, it would be desirable to the heater block processed in chamber is improved, thus improve the heat of heater block
Amount utilization rate, and make the uniformity of temperature profile of crystal column surface, and simplify cavity body structure and make it easier to
Safeguard.
Summary of the invention
In order to overcome the deficiency of the problems referred to above, it is contemplated that improve the heat utilization ratio of heater block, make
The uniformity of temperature profile of crystal column surface, and reach the structure complexity simplifying cavity and the purpose being easily maintained.
The present invention provides a kind of plasma etch chamber room, penetrates containing the upper electrode and connection connecting earth lead
Frequently the bottom electrode in source, and the electrostatic chuck between upper and lower electrode, including:
On described, base part is provided with quartz window；
Described quartz window and described on be provided with heater between electrode；
It is provided with coolant circulation device inside described electrostatic chuck；Wherein,
Described heater and described on be provided with reflection unit between electrode, or described heater with
Inner surface or the inner surface of side that upper electrode is relative scribble reflectance coating.
Preferably, described reflection unit is reflector.
Preferably, described reflection unit with Arbitrary Rotation, or can move along the horizontal or vertical direction.
Preferably, the center of described reflection unit is directed at the center of described wafer.
Preferably, described reflection unit connects head, and described head connects position adjustments
Device.
Preferably, described position control control described head can with Arbitrary Rotation, or
Move along the horizontal or vertical direction, thus drive described reflection unit can with described head vertically in
Heart line is that axle rotates, or described reflection unit moves along the horizontal or vertical direction.
Preferably, the center of described reflection unit connects described head.
Preferably, the edge of described reflection unit is with aid mark.
Preferably, the aid mark of described reflection unit be described reflection unit edge four projections or
Graduation mark, described four projections are by the edge quartering of described reflection unit.
Preferably, described reflection unit includes upper and lower two-layer, equipped with sending out between described upper and lower two-layer
Electro-optical device.
Preferably, the cross section of described reflection unit is arc, and the horizontal plane of described reflection unit is
Circular.
Preferably, the inner surface of described reflection unit scribbles reflectance coating.
Preferably, the inner surface reflectance coating of described reflection unit is transparent or semitransparent or opaque.
Preferably, the material of described reflection unit is Inorganic Non-metallic Materials.
Preferably, the material of described reflection unit is resin or glass.
Preferably, the horizontal projected area of described reflection unit is cut more than or equal to the level of described heater
Face area.
Preferably, scribble at the described heater inner surface relative with upper electrode and the inner surface in side
Reflectance coating.
Preferably, the outer surface of described electrostatic chuck is with aid mark.
Preferably, the aid mark of the outer surface of described electrostatic chuck is the outside table of described electrostatic chuck
The graduation mark in face.
Preferably, the aid mark of the outer surface of described electrostatic chuck is the outside table of described electrostatic chuck
Having worn four projections, described four protruding centrages are by the circumference quartering of described wafer.
Preferably, described heater is infrared heater.
Preferably, described heater connects PCU Power Conditioning Unit.
The present invention also provides for a kind of method using above-mentioned plasma etch chamber room to control wafer temperature,
Including:
Step S01: wafer is loaded on described electrostatic chuck；
Step S02: open described heater, regulates the described PCU Power Conditioning Unit of described heater,
Wafer is heated by design temperature；
Step S03: be reflected process, the light of described heater is collected on described wafer and
It is uniformly distributed on described wafer；
Step S04: open described coolant circulation device, keeps described electrostatic chuck and described wafer
Temperature is in set temperature.
Preferably, in described step S02, described reflection process is to use described reflectance coating to add described
It is collected on wafer after the light line reflection of thermal and is uniformly distributed on wafer.
Preferably, in described step S02, use reflection unit carry out described reflection process, described instead
Adjustment process is also included before being emitted through journey, particularly as follows: first adjust position or the angle of described reflection unit,
The center of described reflection unit is made to be directed at the center of described wafer；Then, described reflection dress
Put and will be collected on wafer after the light line reflection of described heater and be uniformly distributed on wafer.
Preferably, in described step S02, described adjustment process uses position regulator control described instead
The position of injection device or angle.
Preferably, in described step S02, during described adjustment, the edge of described reflection unit and institute
State the edge of electrostatic chuck with four projections, by four protruding centrages of described reflection unit, with
The graduation mark place straight line of four protruding centrages of described electrostatic chuck or described electrostatic chuck one a pair
Accurate.
Preferably, in described step S02, described reflection unit contains light-emitting device, described adjustment process
In, open the light-emitting device of described reflection unit, make described reflection unit level on described wafer throw
The center of shadow is directed at the center of described wafer.
Preferably, described reflection unit is reflector.
Preferably, described heater is infrared heater.
A kind of plasma etch chamber room controlling wafer temperature of the present invention and method thereof, by prior art
In heater be improved to: reflection unit such as reflector is set between heater and upper electrode,
Or scribble reflectance coating at the inner surface that heater is relative with upper electrode, can be by the light of heater
Converge to be uniformly distributed on wafer and at crystal column surface, improve the utilization rate of the heat of heater,
By the regulation position of reflector or angle, can improve further heater heat utilization ratio and
Heat being uniformly distributed at crystal column surface；Coolant circulation device below recycling electrostatic chuck is further
Accurately control the temperature of crystal column surface, it is achieved that the good control to wafer temperature, and improve heating
The utilization rate of the heat of device, makes the simple in construction of chamber, it is easy to safeguard.
Accompanying drawing explanation
Fig. 1 is the part section structural representation of process chamber of the prior art
Fig. 2 is the plasma etch chamber room controlling wafer temperature of a preferred embodiment of the present invention
Part section structural representation
Fig. 3 is the schematic flow sheet of the method controlling wafer temperature of a preferred embodiment of the present invention
Fig. 4 is the plasma etch chamber room controlling wafer temperature of another preferred embodiment of the present invention
Part section structural representation
Fig. 5 is the schematic flow sheet of the method controlling wafer temperature of another preferred embodiment of the present invention
Detailed description of the invention
Embodiment feature of present invention will describe with the embodiment of advantage in the explanation of back segment in detail.It should be understood that
Being that the present invention can have various changes in different examples, it neither departs from the scope of the present invention,
And explanation therein and being shown in substantially as purposes of discussion, and be not used to limit the present invention.
In semiconductor fabrication, being divided into wet method and dry etching, dry etching is to be put by processed substrate
In plasma, being corrosive at band, have under the bombardment of certain energetic ion, reaction generates gaseous state
Material, removes the thin film that is etched.At present frequently with have inductively coupled plasma (ICP), transformation coupling etc.
Ion (TCP), capacitiveiy coupled plasma (CCP) lithographic technique etc., can independently control ion because it has
Density and the advantage of ion energy, it has also become the most ideal dry etching technology.The present invention uses
Be the plasma generator that separates with substrate bias power of plasma source power, the plasma of all uncouplings
Generator, all can apply in the present invention than ICP, TCP, CCP described above etc..
Below in conjunction with accompanying drawing 2-5, by specific embodiment the present invention a kind of controlled wafer temperature etc.
Plasma etching chamber and method thereof are described in further detail.It should be noted that, accompanying drawing all uses very
The form that simplifies, use non-ratio accurately, and only in order to convenient, reach to aid in illustrating this lucidly
The purpose of bright embodiment.
Embodiment 1
The plasma etch chamber room controlling wafer temperature of the present invention can apply to any plasma generator
In, refer to the plasma controlling wafer temperature that Fig. 2, Fig. 2 are preferred embodiments of the present invention
The part section structural representation of body etching cavity, the structure of this plasma etching chamber includes:
Containing connecting the upper electrode 1 of earth lead and connecting the bottom electrode 6 of radio frequency source, and it is positioned at upper and lower electrode
Between electrostatic chuck 5, below upper electrode 1, be provided with quartz window 2, at quartz window 2 and upper electrode 1
Between be provided with heater 3, inside electrostatic chuck 5, be provided with coolant circulation device 8；In the present invention,
Reflection unit can be provided with, it is also possible in heater and upper electrode phase between heater and upper electrode
To inner surface or the inner surface coating reflectance coating of side, in the present embodiment, heater 3 with on
The inner surface that electrode 1 is relative and the inner surface in side are coated with reflectance coating 4, such as dotted line in Fig. 2
Shown in, dotted line represents the border path of the light that reflectance coating 4 reflects, and reflectance coating 4 can be to heating
Device 3 reflects at the light of rear side and side-emitted, makes light gather on wafer 7, thus carries
High heat utilization ratio, decreases the loss of heat, and owing to the area of reflectance coating 4 is relatively big, rises
Arrive light in the most equally distributed effect in wafer 7 surface.The material of reflectance coating 4 can be to appoint
Meaning has corrosion resistance and the higher material of stability without metal ingredient.Due to infrared heating device not
The only efficiency of heating surface is higher, and ultraviolet can be avoided to irradiate and produce semiconductor device or photoresist not
Profit impact, such as, some insulating barrier and the degeneration etc. of photoresist, so heater 3 can be adopted as
Infrared heater, such as, near infrared heater, far-infrared heater etc.；Heater 3 can but not
It is limited to single-point circle heating fluorescent tube, multiple spot annular-heating fluorescent tube, spiral type heating fluorescent tube or "the" shape
Heating fluorescent tube or special pipe.Heater 3 is also associated with PCU Power Conditioning Unit, in order to regulate and control adds
The thermal heating-up temperature to wafer；Coolant circulation device 8 can be, but not limited to be coolant circulation pipe
Road, this coolant circulating line enters from one end of electrostatic chuck 5, derives from the other end, in order to control
The temperature of wafer 7 is too high, coordinates with heater 3 thus reaches to control the purpose of wafer 7 temperature.Can
To find out, comparing with existing etching cavity, the etching cavity of the present embodiment of the present invention is possible not only to carry
High heat utilization efficiency, and simple in construction, it is easy to safeguard.
Refer to the schematic flow sheet that Fig. 3, Fig. 3 are the methods controlling wafer temperature of the present embodiment, as
Shown in Fig. 3, the method controlling wafer temperature of the present invention, including:
Step S01: wafer is loaded on the electrostatic chuck of etching cavity；
Step S02: open heater, the described PCU Power Conditioning Unit of regulation heater, set temperature
Wafer is heated by degree；
Step S03: be reflected process, is collected at the light of heater on wafer and equal on wafer
Even distribution；Here, reflection process is to use reflectance coating to be collected at crystalline substance after the light line reflection of heater
It is uniformly distributed on circle and on wafer.To the heating-up temperature of wafer be set by regulate PCU Power Conditioning Unit
It is set, may be used for the control to wafer temperature under different plasma etching condition.Heater
Infrared heating device, such as, near infrared heater, far-infrared heater etc., heater can be used
Can be, but not limited to for single-point circle heating fluorescent tube, multiple spot annular-heating fluorescent tube, spiral type heating fluorescent tube or
"the" shape heating fluorescent tube or special pipe.
It is coated with owing to the inner surface relative with upper electrode at heater and the inner surface in side are coated with reflection
Layer, such as, heater is the heating fluorescent tube of multiple spot annular, produces heating by infrared radiation, this reflection
The heat that layer can avoid heater to produce loses from the rear side of heater, utilizes this reflecting layer can
With the heat collection produced by heater and be gathered on wafer, thus improve the heat of heater
Amount utilization rate, and reflected by the large area in reflecting layer, heat can more be evenly distributed in wafer
On.Here, compared with the heater of the reaction chamber shown in aforesaid Fig. 1, this reality of the present invention
Execute example, use a heater recycling reflecting layer just can reach wafer surface temperature equally distributed
Purpose, and improve capacity usage ratio, save energy resource consumption.
Step S03: open coolant circulation device, keeps described electrostatic chuck and the temperature of described wafer
In set temperature.Owing to coolant circulation device is arranged on inside electrostatic chuck, coolant such as water
Deng, can flowing into from one end of coolant circulation device, the other end flows out, in the process, due to cold
But the circulating cooling of agent, if temperature of electrostatic chuck is too high, its heat will be commanded by coolant cyclic system
Walk, thus keep its temperature near design temperature table, when wafer temperature higher than temperature of electrostatic chuck time,
Owing to temperature of electrostatic chuck is less than wafer temperature, the partial heat of wafer passes to electrostatic chuck, then by quiet
Electricity sucker passes to coolant circulating system, circulates according to this, it is ensured that wafer temperature will not be too high, and protects
Hold near design temperature.
Embodiment 2
The plasma etch chamber room controlling wafer temperature of the present invention can apply to any plasma and sends out
In raw device, refer to the control wafer temperature that Fig. 4, Fig. 4 are another preferred embodiments of the present invention
The part section structural representation of plasma etch chamber room, the structure bag of this plasma etching chamber
Include: containing connecting the upper electrode 1 ' of earth lead and connecting the bottom electrode 6 ' of radio frequency source, and be positioned at,
Electrostatic chuck 5 ' between bottom electrode, is provided with quartz window 2 ', at quartz window 2 ' in upper electrode 1 ' lower section
And it is provided with heater 3 ' between upper electrode 1 ', circulates dress at the internal coolant that is provided with of electrostatic chuck 5 '
Put 8 '；In the present invention, reflection unit can be provided with between heater and upper electrode, it is also possible to
Inner surface coating reflectance coating in the heater inner surface relative with upper electrode 1 ' or side, this reality
Executing in example, be provided with reflection unit between heater 3 ' and upper electrode 1 ', this reflection unit can be
Reflector 4 ', in the present embodiment, to use reflector 4 ' to retouch the present invention as reflection unit
State, but this is not used in restriction the scope of the present invention.Reflector 4 ' can be with Arbitrary Rotation, or edge
Horizontal or vertical direction moves.In the present embodiment, the cross section of reflector 4 ' can be, but not limited to as arc
Shape, horizontal plane can be, but not limited to as circle.
In the present embodiment, can be, but not limited to use a fixing device to be fixed up by head,
Here, fixing device can be, but not limited to be fixing axle, and it can be, but not limited to be fixed on electrode 1 '
On, it is also possible to it is fixed on other position of plasma etch chamber room, such as heater 3 ' first-class,
Installation activity device the most on the securing means, the method for installation can be, but not limited to use bolt to fix.Instead
Penetrating cover 4 ' to be connected on head, head connects position control.
Position control controls head can be with Arbitrary Rotation, or along the horizontal or vertical direction
Mobile, thus drive reflector 4 ' can carry out in horizontal plane with head place vertical curve for axle
Rotate at any angle, or move along the horizontal or vertical direction, such as, controlled by position control
Head processed rotates to an angle, and moves a certain distance the most still further below, thus drives reflector 4 '
Also identical motion is made.Here, head can be connected to reflector 4 ' center, then
The vertical curve at the place, center of reflector 4 ' can be the axis of symmetry of reflector 4 ', reflector 4 '
Can rotate along this axis of symmetry.
In the present embodiment, reflector 4 ' can with Arbitrary Rotation and can along horizontally or vertically side
To movement, as such, it is possible to the position of regulation reflector 4 ' and angle, make the center of reflector 4 '
Be directed at the center of wafer 7 ', thus the heat that distributes of significantly more efficient collection heater 3 ' with
And uniform light is distributed on the surface of wafer 7 '.
In the present embodiment, the edge of reflector 4 ' is with aid mark, it is also preferred that the left at reflector 4 '
The aid mark at edge is graduation mark, or at the edge of reflector 4 ' with four projections, these four convex
Rise the edge quartering of reflector 4 '.The outer surface of electrostatic chuck 5 ' is with aid mark, such as
At the outer surface of electrostatic chuck 5 ' with scale, owing to wafer is placed on electrostatic chuck, in wafer
Heart position is corresponding with the center of electrostatic chuck, by by the center of electrostatic chuck and reflector
The heart will be directed at, and namely be aligned at the center at the center of electrostatic chuck with reflector, and such as, electrostatic is inhaled
Scale on the outer surface of dish 5 ' is with four zero grooves, the intersection of these four zero groove place straight lines
Point is directed at the center of wafer, by outside the four of reflector 4 ' protruding centrages and electrostatic chuck 5 '
Four zero groove place straight lines of side surface are directed at one by one, and according to cross searching alignment principles, this is just equal to
In the center of the center of reflector 4 ' with wafer is aligned；For another example, electrostatic chuck 5 '
The aid mark of outer surface can be four projections, and these four protruding centrages are by the circumference four of wafer
Decile, then the cross point of these four protruding centrages is directed at the center of wafer, by electrostatic chuck 5 '
Four protruding centrages align with the four of reflector 4 ' protruding centrages, be also equivalent to
The center of wafer reflector 7 ' is aligned with the center of reflector 4 '.
In the present embodiment, reflector 4 ' also includes upper and lower two-layer, is provided with luminescence between upper and lower layer
Device.Reflector 4 ' is more than or equal to the horizontal section area of heater in wafer 7 ' horizontal projected area,
Reflector 4 ' can be, but not limited to be bending, and its curvature can set according to the shape of heater 3 '
Fixed, make the reflector 4 ' can be by its in addition to the heat in the face of that side of quartz window 2 ' of heater
The heat of its surface of emission all collects, and accumulates on wafer 7 ', as shown in phantom in Figure 4, empty
Line represents the border path of the light that reflector 4 ' reflects.Owing to reflector 4 ' can move, Ke Yitong
Cross the position of mobile reflector 4 ', regulate and be directed at it and cover side on the heating, thus improve heat
Amount utilization rate, owing to reflector 4 ' area is relatively big, so its area launched is also big, serves light
The distribution effect of line, therefore can make heat be uniformly distributed on wafer 7 '.
In the present embodiment, the inner surface of reflector scribbles reflectance coating, and the material of reflector is inorganic non-gold
Belong to material, it is preferred that the material of reflector can be resin or glass, because at plasma etch chamber
In, if metal material, metal material can affect magnetic distribution in reaction chamber.The interior table of reflector
Face reflectance coating can be transparent, it is also possible to is translucent or opaque.In the present embodiment, due to infrared
The heater not only efficiency of heating surface is higher, and ultraviolet can be avoided to irradiate semiconductor device or photoetching
The adverse effect that glue produces, such as, some insulating barrier and the degeneration etc. of photoresist, so heater 3 '
Infrared heater, such as, near infrared heater, far-infrared heater etc. can be used；Heater 3 '
Can be, but not limited to for single-point circle heating fluorescent tube, multiple spot annular-heating fluorescent tube, spiral type heating fluorescent tube or
"the" shape heating fluorescent tube or special pipe.Heater 3 ' is also associated with PCU Power Conditioning Unit, in order to
Regulation and the control heater 3 ' heating-up temperature to wafer 7 '；Coolant circulation device 8 ' can but
Being not limited to coolant circulating line, this coolant circulating line enters from one end of electrostatic chuck 5 ',
Derive from the other end, too high in order to control the temperature of wafer 7 ', coordinate with heater 3 ' thus reach
Control the purpose of wafer 7 ' temperature.It can be seen that compare with existing etching cavity, the basis of the present invention
The etching cavity of embodiment is possible not only to improve heat utilization efficiency, and simple in construction, it is easy to safeguard.
Refer to the schematic flow sheet that Fig. 5, Fig. 5 are the methods controlling wafer temperature of the present embodiment, as
Shown in Fig. 3, the method controlling wafer temperature of the present invention, including:
Step S01: wafer is loaded on the electrostatic chuck of etching cavity；
Step S02: open heater, the PCU Power Conditioning Unit of regulation heater, design temperature pair
Wafer heats；
Step S03: adjusted process, by the angles and positions of position regulator regulation reflector,
The center of reflector is made to be directed at the center of wafer；In order to reach the purpose being accurately directed at, can
With use edge with the reflector of aid mark, it is also preferred that the left the edge of reflector is with graduation mark, or
With four projections, these four projections by the edge quartering of reflector, these four protruding centrages
Cross point is directed at the center of reflector.
Coordinate again the outer surface of electrostatic chuck with aid mark, such as at the outer surface of electrostatic chuck
With scale, owing to wafer is placed on electrostatic chuck, the center of wafer and the centre bit of electrostatic chuck
Put corresponding, by the center of electrostatic chuck will be directed at the center of reflector, namely electrostatic is inhaled
The center of dish aligns with the center of reflector, such as, the scale on the outer surface of electrostatic chuck with
Four zero grooves, the cross point of these four zero groove place straight lines is directed at the center of wafer, by reflector
Four zero groove place straight lines one a pair of outer surface of four protruding centrages and electrostatic chuck
Standard, according to cross searching alignment principles, this is equivalent to the center of the center of reflector Yu wafer
Position aligns；For another example, the aid mark of electrostatic chuck outer surface can be four projections, and these are four years old
The centrage of individual projection is by the circumference quartering of wafer, then the cross point of these four protruding centrages with
The center alignment of wafer, by four of the four of electrostatic chuck protruding centrages and reflector protruding in
Heart line aligns, and is also equivalent to relative to the center of wafer reflector and the center of reflector
Accurate.
In the present embodiment, reflector includes upper and lower two-layer, is provided with light-emitting device between upper and lower layer,
It is in course of adjustment, light-emitting device is opened, if reflector is in opaque or half with reflectance coating
Pellucidity, the floor projection of reflector falls on wafer, by position regulator, adjusts reflector
Angles and positions, make the center of floor projection of reflector be directed at the center of wafer, can use auxiliary
Help labelling, the four of reflector described above protruding centrages of ratio, protruding with the four of electrostatic chuck
Centrage is mutually aligned or the graduation mark place straight line of outer surface of electrostatic chuck aligns, and i.e. can reach
The purpose that the center of the floor projection of reflector is directed at the center of wafer.
Step S04: be reflected process, is collected at the light of heater on wafer and equal on wafer
Even distribution；Here, reflection process is position or the angle adjusting reflector, by anti-for the light of heater
It is collected at after penetrating on wafer and on wafer and is uniformly distributed.The heating-up temperature of wafer is passed through to adjust by heater
Joint PCU Power Conditioning Unit is set, and may be used under different plasma etching condition wafer temperature
Control.
Having head owing to reflector connects, head connects position control, utilizes position to adjust
Joint device can control position or the angle of head, thus controls position or the angle of reflector, makes anti-
The center of the center and wafer of penetrating cover is directed at, and regulates reflector and make it cover to add hot charging
Putting top, the heat that heater can be avoided to produce loses from the rear side of heater, utilizes this anti-
Penetrate heat collection that heater can produce by cover and be gathered on wafer, thus improving Btu utilization
Rate, owing to reflector area is relatively big, so its area launched is also big, serves the distribution to light and makees
With, heat therefore can be made to be uniformly distributed on wafer.Here, with the reaction shown in aforesaid Fig. 1
The heater of chamber is compared, the present embodiment of the present invention, uses a heater recycling removable
Reflector just can reach the equally distributed purpose of wafer surface temperature, and improve capacity usage ratio,
Save energy resource consumption.
Step S05: open coolant circulation device, keeps the temperature of electrostatic chuck and wafer set
Temperature.Owing to coolant circulation device is arranged on inside electrostatic chuck, coolant such as water etc., permissible
Flowing into from one end of coolant circulation device, the other end flows out, in the process, due to following of coolant
Ring cools down, if temperature of electrostatic chuck is too high, its heat will be taken away by coolant blood circulation, thus
Keep its temperature near design temperature table, when wafer temperature higher than temperature of electrostatic chuck time, due to quiet
Electricity sucker temperature is less than wafer temperature, and the partial heat of wafer passes to electrostatic chuck, then by electrostatic chuck
Pass to coolant circulating system, circulate according to this, it is ensured that wafer temperature will not be too high, and be maintained at and set
Near fixed temperature.
A kind of plasma etch chamber room controlling wafer temperature of the present invention and method thereof, by heating
Reflection unit such as reflector is set between device and upper electrode, or relative with upper electrode at heater
Inner surface scribbles reflectance coating, can be by the light collection of heater to wafer and at crystal column surface
It is uniformly distributed, improves the utilization rate of the heat of heater, by position or the angle of regulation reflector,
Heat utilization ratio and heat being uniformly distributed at crystal column surface of heater can be improved further；Again
The coolant circulation device below electrostatic chuck is utilized the most accurately to control the temperature of crystal column surface, it is achieved
Good control to wafer temperature, and improve the utilization rate of the heat of heater, make chamber
Simple in construction, it is easy to safeguard.
The above-described embodiments of the invention that are only, described embodiment also is not used to limit the special of the present invention
Profit protection domain, the equivalent structure change that the description of the most every utilization present invention and accompanying drawing content are made,
In like manner should be included in protection scope of the present invention.
Claims (30)
1. a plasma etch chamber room, containing connecting the upper electrode of earth lead and connecting under radio frequency source
Electrode, the electrostatic chuck between upper and lower electrode, and the wafer being positioned on electrostatic chuck, it is special
Levy and be,
On described, base part is provided with quartz window；
Described quartz window and described on be provided with heater between electrode；
Being provided with coolant circulation device inside described electrostatic chuck, described coolant circulation device is from electrostatic
One end of sucker enters, and derives from the other end, in order to control the temperature of wafer；Wherein,
Described heater and described on be provided with reflection unit between electrode, described reflection unit transversal
Face is arc, and the heat that described heater distributes is gathered the crystalline substance on electrostatic chuck by described reflection unit
On circle；Or scribble reflection at the inner surface of the described heater inner surface relative with upper electrode or side and be coated with
Layer, the heat that described heater distributes is gathered on the wafer on electrostatic chuck by described reflectance coating；
Described coolant circulation device coordinates with described heater, described reflection unit or described reflectance coating to be made
With, to control the temperature of wafer.
Plasma etch chamber room the most according to claim 1, it is characterised in that described reflection fills
It is set to reflector.
Plasma etch chamber room the most according to claim 1, it is characterised in that described reflection fills
Put and with Arbitrary Rotation, or can move along the horizontal or vertical direction.
Plasma etch chamber room the most according to claim 1, it is characterised in that described reflection fills
The center put is directed at the center of described wafer.
Plasma etch chamber room the most according to claim 1, it is characterised in that described reflection fills
Putting connection and have head, described head connects position control.
Plasma etch chamber room the most according to claim 5, it is characterised in that described position is adjusted
Joint device controls described head and with Arbitrary Rotation, or can move along the horizontal or vertical direction,
Thus drive described reflection unit can rotate with the vertical centrage of described head for axle, or
Described reflection unit moves along the horizontal or vertical direction.
Plasma etch chamber room the most according to claim 5, it is characterised in that described reflection fills
The center put connects described head.
Plasma etch chamber room the most according to claim 1, it is characterised in that described reflection fills
The edge put is with aid mark.
Plasma etch chamber room the most according to claim 8, it is characterised in that described reflection fills
The aid mark put is four projections or the graduation mark at the edge of described reflection unit, and described four projections will
The edge quartering of described reflection unit.
Plasma etch chamber room the most according to claim 1, it is characterised in that described reflection
Device includes upper and lower two-layer, equipped with light-emitting device between described upper and lower two-layer.
11. plasma etch chamber rooms according to claim 1, it is characterised in that described reflection
The horizontal plane of device is circular.
12. plasma etch chamber rooms according to claim 1, it is characterised in that described reflection
The inner surface of device scribbles reflectance coating.
13. plasma etch chamber rooms according to claim 12, it is characterised in that described reflection
The inner surface reflectance coating of device is transparent or semitransparent or opaque.
14. plasma etch chamber rooms according to claim 1, it is characterised in that described reflection
The material of device is Inorganic Non-metallic Materials.
15. plasma etch chamber rooms according to claim 14, it is characterised in that described reflection
The material of device is resin or glass.
16. plasma etch chamber rooms according to claim 1, it is characterised in that described reflection
The horizontal projected area of device is more than or equal to the horizontal section area of described heater.
17. plasma etch chamber rooms according to claim 1, it is characterised in that add described
The inner surface that thermal is relative with upper electrode and the inner surface in side scribble reflectance coating.
18. plasma etch chamber rooms according to claim 1, it is characterised in that described electrostatic
The outer surface of sucker is with aid mark.
19. plasma etch chamber rooms according to claim 1, it is characterised in that described electrostatic
The aid mark of the outer surface of sucker is the graduation mark of the outer surface of described electrostatic chuck.
20. plasma etch chamber rooms according to claim 1, it is characterised in that described electrostatic
The aid mark of the outer surface of sucker be the outer surface of described electrostatic chuck with four projections, described
Four protruding centrages are by the circumference quartering of described wafer.
21. plasma etch chamber rooms according to claim 1, it is characterised in that described heating
Device is infrared heater.
22. plasma etch chamber rooms according to claim 1, it is characterised in that described heating
Device connects PCU Power Conditioning Unit.
The plasma etch chamber room that 23. 1 kinds use described in the claims 1-22 any one controls
The method of wafer temperature, it is characterised in that including:
Step S01: wafer is loaded on described electrostatic chuck；
Step S02: open described heater, regulates described heater, and wafer is entered by design temperature
Row heating；
Step S03: be reflected process, the light of described heater is collected on described wafer and
It is uniformly distributed on described wafer；Wherein, described heater and described on be provided with reflection dress between electrode
Putting, the cross section of described reflection unit is arc, the heat that described heater is distributed by described reflection unit
Quantity set gathers on the wafer on electrostatic chuck；Or at the described heater inner surface relative with upper electrode or
The inner surface of side scribbles reflectance coating, and the heat that described heater distributes is gathered by described reflectance coating
On wafer on electrostatic chuck；
Step S04: open described coolant circulation device, keeps described electrostatic chuck and described wafer
Temperature is in set temperature；Coolant circulation device and heater and reflection unit or reflection are coated with
Layer is with the use of controlling wafer temperature.
The method of 24. control wafer temperatures according to claim 23, it is characterised in that described step
In rapid S03, described reflection process is to use described reflectance coating by after the light line reflection of described heater
It is collected on wafer and is uniformly distributed on wafer；The material of described reflectance coating is without metal ingredient
Corrosion-resistant material.
The method of 25. control wafer temperatures according to claim 23, it is characterised in that described step
In rapid S03, use reflection unit to carry out described reflection process, also included adjusting before described reflection process
It has suffered journey, particularly as follows: first adjust position or the angle of described reflection unit, make described reflection unit
Center is directed at the center of described wafer；Then, described reflection unit is by described heater
Light line reflection after be collected on wafer and be uniformly distributed on wafer.
The method of 26. control wafer temperatures according to claim 25, it is characterised in that described step
In rapid S03, described adjustment process uses position regulator to control position or the angle of described reflection unit.
The method of 27. control wafer temperatures according to claim 25, it is characterised in that described step
In rapid S03, during described adjustment, the edge of described reflection unit and the boundary zone of described electrostatic chuck
There are four projections, by four protruding centrages of described reflection unit, with four of described electrostatic chuck
Protruding centrage or the graduation mark place straight line of described electrostatic chuck are directed at one by one.
28. according to the method controlling wafer temperature described in claim 25,26 or 27, and its feature exists
In, in described step S03, described reflection unit contains light-emitting device, during described adjustment, opens
The light-emitting device of described reflection unit, makes the center of described reflection unit floor projection on described wafer
Position is directed at the center of described wafer.
The method of 29. control wafer temperatures according to claim 23, it is characterised in that described
Reflection unit is reflector.
The method of 30. control wafer temperatures according to claim 23, it is characterised in that described in add
Hot charging is set to infrared heater.
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| CN201310157252.0A CN103258761B (en) | 2013-05-02 | 2013-05-02 | A kind of plasma etch chamber room controlling wafer temperature and method thereof |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104377107A (en) * | 2014-09-24 | 2015-02-25 | 上海华力微电子有限公司 | Etching device for SiCoNi etching process |
| CN104900471B (en) * | 2015-04-13 | 2017-04-19 | 上海华力微电子有限公司 | Plasma etching device and method for improving the efficiency of silicon-cobalt-nickel etching |
| CN105040097B (en) * | 2015-06-30 | 2018-05-01 | 上海华力微电子有限公司 | For the chemical vapor deposition process chamber and chemical vapor deposition method of wafer crystal edge |
| CN107305832A (en) * | 2016-04-25 | 2017-10-31 | 中微半导体设备(上海)有限公司 | A kind of semiconductor processing device and the method for handling substrate |
| CN109427668A (en) * | 2017-09-01 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of semiconductor device |
| CN108287574A (en) * | 2018-03-29 | 2018-07-17 | 北京创昱科技有限公司 | Temperature-adjusting device and wafer vacuum heating device |
| CN113614892B (en) * | 2019-03-20 | 2024-04-12 | 株式会社国际电气 | Substrate processing apparatus, processing container, reflector, and method for manufacturing semiconductor device |
| CN112179661B (en) * | 2020-09-18 | 2022-04-22 | 中国航发四川燃气涡轮研究院 | Heating device for wheel disc test |
| CN112750738B (en) * | 2021-01-18 | 2024-02-23 | 中国电子科技集团公司第四十八研究所 | Ion beam etching equipment and etching method thereof |
| CN113539893A (en) * | 2021-05-11 | 2021-10-22 | 北京北方华创微电子装备有限公司 | Heating device for semiconductor process chamber and semiconductor equipment |
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| CN101231941A (en) * | 2007-01-15 | 2008-07-30 | 应用材料股份有限公司 | Temperature measurement and control of wafer support in thermal processing chamber |
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| JPS59194436A (en) * | 1983-04-20 | 1984-11-05 | Kokusai Electric Co Ltd | Dry etching method and device therefor |
| US6566630B2 (en) * | 2000-04-21 | 2003-05-20 | Tokyo Electron Limited | Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object |
| JP2010103183A (en) * | 2008-10-21 | 2010-05-06 | Inflidge Kogyo Kk | Light irradiation heating device and light irradiation heating method |
| US8580693B2 (en) * | 2010-08-27 | 2013-11-12 | Applied Materials, Inc. | Temperature enhanced electrostatic chucking in plasma processing apparatus |
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| CN101231941A (en) * | 2007-01-15 | 2008-07-30 | 应用材料股份有限公司 | Temperature measurement and control of wafer support in thermal processing chamber |
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