CN103247736A - Welding protection structure of flip LED chip - Google Patents
Welding protection structure of flip LED chip Download PDFInfo
- Publication number
- CN103247736A CN103247736A CN2013101499046A CN201310149904A CN103247736A CN 103247736 A CN103247736 A CN 103247736A CN 2013101499046 A CN2013101499046 A CN 2013101499046A CN 201310149904 A CN201310149904 A CN 201310149904A CN 103247736 A CN103247736 A CN 103247736A
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- layer
- flip led
- protection structure
- side wall
- chip
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Abstract
The invention relates to a flip LED chip, in particular to a welding protection structure of the flip LED chip, and aims to prevent direct short circuit or electric leakage between P and N during flip solid crystal welding of the flip LED chip, so that the welding protection structure of the flip LED chip is provided. A first side wall of the chip is provided with both a P type layer and an N layer and is characterized in that a chip bottom surface and a substrate bottom surface are covered with an insulated passivation layer of the first side wall. During flip solid crystal welding of the chip, even if solder overflows and climbs upward, short circuit or electric leakage cannot happen to the P type layer and the N layer on the side due to the fact that the passivation layer performs insulation protection on the side wall of the chip.
Description
Technical field
The invention relates to flip LED chips, is specifically related to its welding protection structure.
Background technology
When flip LED chips being carried out the solid brilliant welding of upside-down mounting, for example scolder such as tin cream, silver slurry may excessively be climbed up chip.Only in die bottom surface P ohmic contact layer and N ohmic contact layer are carried out the passivation insulation in the prior art; avoiding weld is to be short-circuited between the P ohmic contact layer of die bottom surface and the N ohmic contact layer; but do not consider the excessive more upper strata of climbing to of scolder meeting; so the insulation protection measure is not implemented on the more upper strata to the chip sidewall; and the existing P type of the sidewall that has on chip layer; the N-type layer is arranged again; for example the sidewall of P electrode one side is followed successively by the P ohmic contact layer from die bottom surface to chip end face; the P semiconductor layer; active illuminating layer; N semiconductor layer and substrate; so when carrying out the welding of P electrode; if the excessive sidewall of climbing up this side of scolder touches the N semiconductor layer, will cause P; direct short-circuit or electric leakage between the N.
Summary of the invention
The purpose of the invention is direct short-circuit or electric leakage between P, the N when preventing the solid brilliant welding of flip LED chips upside-down mounting.
Provide flip LED chips welding protection structure, the existing P type of the first side wall of chip layer has the N-type layer again, it is characterized in that for this reason, and the insulated passivation layer of the first side wall covers to the substrate bottom surface from die bottom surface.Before being passivated layer covering, the first side wall begins to be etched to the substrate bottom surface from die bottom surface.The passivation layer outside that covers the first side wall flushes in the substrate of homonymy.The passivation material that covers the first side wall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
Second sidewall that P type layer and N-type layer are not arranged simultaneously of chip also insulated passivation layer covers to the substrate bottom surface from die bottom surface.Before being passivated layer covering, second sidewall begins to be etched to the substrate bottom surface from die bottom surface.The passivation layer outside that covers second sidewall flushes in the substrate of homonymy.The passivation material that covers second sidewall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
Beneficial effect: during the solid brilliant welding of flip-chip, swash even scolder is excessive, owing to there is passivation layer to carry out insulation protection at the sidewall of chip, the P type layer of this side and N-type layer just can short circuits or have been leaked electricity yet.Be preferably in passivation layer and cover first etching sidewall before, the overlapping operation of passivation layer is easier to realize like this, and can allow the passivation layer outside flush in the substrate of homonymy, thereby makes chip sides neat.
Description of drawings
Fig. 1 is flip LED chips welding protection structural representation.
Embodiment
As Fig. 1, flip LED chips comprises substrate 1, N semiconductor layer 2, N ohmic contact layer 3, active illuminating layer 4, P semiconductor layer 5 and P ohmic contact layer 6.In die bottom surface P ohmic contact layer and N ohmic contact layer are carried out the passivation insulation and form passivation layer 80, avoiding weld is to be short-circuited between the P ohmic contact layer 6 of die bottom surface and the N ohmic contact layer 3, and this is prior art.
Among the figure, left side wall is the first side wall, and right side wall is second sidewall.As seen from the figure: the existing P type of the first side wall layer 5,6 has N-type layer 2 again; Second sidewall has N- type layer 2,3 but do not have P type layer, belongs to the sidewall that P type layer and N-type layer are not arranged simultaneously.
The first side wall begins to be etched to substrate 1 bottom surface from die bottom surface, and insulated passivation layer 81 covers to substrate 1 bottom surface from die bottom surface then, and passivation layer 81 outsides that cover the first side wall flush in the substrate 1 of homonymy; Second sidewall begins to be etched to substrate 1 bottom surface from die bottom surface, and insulated passivation layer 82 covers to substrate 1 bottom surface from die bottom surface then, and passivation layer 82 outsides that cover second sidewall flush in the substrate 1 of homonymy.So far form the welding protection structure.
Claims (8)
1. flip LED chips welding protection structure, the existing P type of the first side wall of chip layer has the N-type layer again, it is characterized in that, and the insulated passivation layer of the first side wall covers to the substrate bottom surface from die bottom surface.
2. flip LED chips welding protection structure according to claim 1 is characterized in that, before being passivated layer covering, the first side wall begins to be etched to the substrate bottom surface from die bottom surface.
3. flip LED chips welding protection structure according to claim 2 is characterized in that, the passivation layer outside that covers the first side wall flushes in the substrate of homonymy.
4. flip LED chips welding protection structure according to claim 1 is characterized in that, second sidewall that P type layer and N-type layer are not arranged simultaneously of chip also insulated passivation layer covers to the substrate bottom surface from die bottom surface.
5. flip LED chips welding protection structure according to claim 4 is characterized in that, before being passivated layer covering, second sidewall begins to be etched to the substrate bottom surface from die bottom surface.
6. flip LED chips welding protection structure according to claim 5 is characterized in that, the passivation layer outside that covers second sidewall flushes in the substrate of homonymy.
7. flip LED chips welding protection structure according to claim 1 is characterized in that, the passivation material that covers the first side wall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
8. flip LED chips welding protection structure according to claim 4 is characterized in that, the passivation material that covers second sidewall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101499046A CN103247736A (en) | 2013-04-26 | 2013-04-26 | Welding protection structure of flip LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101499046A CN103247736A (en) | 2013-04-26 | 2013-04-26 | Welding protection structure of flip LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103247736A true CN103247736A (en) | 2013-08-14 |
Family
ID=48927090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101499046A Pending CN103247736A (en) | 2013-04-26 | 2013-04-26 | Welding protection structure of flip LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103247736A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505047A (en) * | 2015-09-07 | 2017-03-15 | 中芯国际集成电路制造（天津）有限公司 | Chip-packaging structure and preparation method thereof, electrostatic powder spraying device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205224A (en) * | 1996-01-25 | 1997-08-05 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element |
| CN1582503A (en) * | 2001-07-23 | 2005-02-16 | 克里公司 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor |
| CN101512783A (en) * | 2006-05-02 | 2009-08-19 | 三菱化学株式会社 | Semiconductor light-emitting element |
| CN101904018A (en) * | 2007-12-18 | 2010-12-01 | 首尔Opto仪器股份有限公司 | Light-emitting device and manufacture method thereof |
| CN102067346A (en) * | 2008-08-19 | 2011-05-18 | 晶能光电（江西）有限公司 | Semiconductor light-emitting device with passivation layer |
| CN203277488U (en) * | 2013-04-26 | 2013-11-06 | 东莞市福地电子材料有限公司 | Welding protection structure of LED flip chip |
-
2013
- 2013-04-26 CN CN2013101499046A patent/CN103247736A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205224A (en) * | 1996-01-25 | 1997-08-05 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element |
| CN1582503A (en) * | 2001-07-23 | 2005-02-16 | 克里公司 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor |
| CN101512783A (en) * | 2006-05-02 | 2009-08-19 | 三菱化学株式会社 | Semiconductor light-emitting element |
| CN101904018A (en) * | 2007-12-18 | 2010-12-01 | 首尔Opto仪器股份有限公司 | Light-emitting device and manufacture method thereof |
| CN102067346A (en) * | 2008-08-19 | 2011-05-18 | 晶能光电（江西）有限公司 | Semiconductor light-emitting device with passivation layer |
| CN203277488U (en) * | 2013-04-26 | 2013-11-06 | 东莞市福地电子材料有限公司 | Welding protection structure of LED flip chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505047A (en) * | 2015-09-07 | 2017-03-15 | 中芯国际集成电路制造（天津）有限公司 | Chip-packaging structure and preparation method thereof, electrostatic powder spraying device |
| CN106505047B (en) * | 2015-09-07 | 2019-02-22 | 中芯国际集成电路制造（天津）有限公司 | Chip-packaging structure and preparation method thereof, electrostatic powder spraying device |
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Application publication date: 20130814 |