CN103247520A - Method for preparing grapheme on basis of controlling ion implantation energy - Google Patents
Method for preparing grapheme on basis of controlling ion implantation energy Download PDFInfo
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- CN103247520A CN103247520A CN2012100265639A CN201210026563A CN103247520A CN 103247520 A CN103247520 A CN 103247520A CN 2012100265639 A CN2012100265639 A CN 2012100265639A CN 201210026563 A CN201210026563 A CN 201210026563A CN 103247520 A CN103247520 A CN 103247520A
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Abstract
The invention provides a method for preparing grapheme on the basis of controlling ion implantation energy. As per the method provided by the invention, firstly, acrbonic ions are implanted into a catalytic substrate based on at least on implantation energy; then the catalytic substrate implanted with acrbonic ions is subjected from annealing so as to enable the acrbonic ions to be separated out, and at least one grapheme thin layer is formed on the surface of the catalytic substrate; and finally, the catalytic substrate with the grapheme thin layer on the surface is removed so as to obtain at least one grapheme thin layer. The grapheme prepared by the method has good quality, large size and controllable layer number, is easy to transfer compared with a SiC (suppressed ion chromatography) sublimed method, and has controllable layer number as compared with a chemical vaporous depositon method.
Description
Technical field
The present invention relates to the Graphene field, particularly relate to the method that a kind of energy that injects based on the control ion prepares Graphene.
Background technology
2004, the method that two scientists of Univ Manchester UK use micromechanics to peel off was found Graphene, and has obtained Nobel Prize in physics in 2010.Because carrier mobility is up to 2*10 in the Graphene
5Cm
2V
-1, its mobility is higher than the silicon materials of large-scale application in the semicon industry far away, therefore is considered to the replacer of silicon in the following nano electron device.In addition, Graphene is also very extensive in the application of light, electrical domain, for example, and based on lithium ion battery, solar cell, gas detector and some devices etc. of Graphene.But, Graphene all is based in the application of light, electrical domain on the basis of the controlled graphene film of large tracts of land, the number of plies.
The method for preparing at present Graphene mainly contains that micromechanics is peeled off, SiC sublimed method, chemical vapor deposition and graphite oxide reducing process.Wherein, micromechanics is peeled off method can prepare high-quality Graphene, but the Graphene area of the method preparation can only be used for Basic Experiment Study less than 1mm * 1mm; The Graphene of SiC sublimed method preparation is subjected to the influence of substrate very big, and number of plies heterogeneity can't be carried out substrate-transfer; Though CVD (Chemical Vapor Deposition) method can prepare large-area graphene film, and be easy to substrate-transfer, but the controllability of the graphene film thickness that the method obtains is relatively poor, multilayer film in uneven thickness can be grown on the nickel metal, and single thin film and a spot of bilayer film can only be grown on the copper.
Summary of the invention
The shortcoming of prior art in view of the above the object of the present invention is to provide a kind of energy that injects based on the control ion to prepare the method for Graphene, and quality is good to obtain, large scale and the controlled graphene film of the number of plies.
Reach other relevant purposes for achieving the above object, the invention provides the method that a kind of energy that injects based on the control ion prepares Graphene, it comprises step at least:
1) injects carbon ion based at least a injection energy to catalytic substrate;
2) catalytic substrate of injecting carbon ion is carried out annealing in process so that the carbon ion that injects is separated out, and form one deck graphene film layer at least on described catalytic substrate surface; And
3) remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed to obtain at least one layer graphene thin layer.
Preferably, described step 1) also comprises: repeatedly inject carbon ion to catalytic substrate in the mode that the injection energy successively decreases.
As mentioned above, the energy that injects based on the control ion of the present invention prepares the method for Graphene, has following beneficial effect: prepared graphene film quality is good, size big and the number of plies is controlled; Than the SiC sublimed method, the Graphene of this law preparation is easy to shift; Compare and chemical vapour deposition technique, the Graphene number of plies of this law preparation is controlled.
Description of drawings
Fig. 1-Fig. 4 is shown as the flow chart of embodiment one that the energy that injects based on the control ion of the present invention prepares the method for Graphene.
Fig. 5-Fig. 8 is shown as the flow chart of embodiment two that the energy that injects based on the control ion of the present invention prepares the method for Graphene.
The element numbers explanation
10,20 catalytic substrate
11,21,22 doped layers
12,23,24 graphene film layers
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, person skilled in the art scholar can understand other advantages of the present invention and effect easily by the disclosed content of this specification.
See also Fig. 1 to Fig. 8.Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not in order to limit the enforceable qualifications of the present invention, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not influencing under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, quote in this specification as " on ", D score, " left side ", " right side ", " centre " reach the term of " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under no essence change technology contents, when also being considered as the enforceable category of the present invention.
Embodiment one:
As shown in the figure, the energy that injects based on the control ion of the present embodiment method for preparing Graphene may further comprise the steps:
The first step: inject carbon ion to catalytic substrate based at least a injection energy.Wherein, described catalytic substrate comprises any material low to the carbon dissolution degree, preferably, includes but not limited to: copper, nickel etc.
For example, as shown in Figure 1, inject carbon atom based on injecting energy E 0 to copper substrate 10, thus, be distributed in copper substrate 10 based on each carbon atom that injects energy E 0 and form doped layer 11, as shown in Figure 2.
Second step: the catalytic substrate of injecting carbon ion is carried out annealing in process so that the carbon atom that injects is separated out, in order to form one deck graphene film layer at least on described catalytic substrate surface.
For example, catalytic substrate shown in Figure 2 10 is carried out annealing in process, make the carbon atom that is positioned at catalytic substrate 10 obtain energy, and utilize the surface catalysis recrystallization of copper to become graphene film layer 12, as shown in Figure 3.
The 3rd step: remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed to obtain at least one layer graphene thin layer.Wherein, can adopt etchant solution to remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed.
For example, adopt FeCl
3Solution removes the copper substrate of structure shown in Figure 3 to obtain one deck graphene film layer 12, as shown in Figure 4 as etchant solution.
Embodiment two:
As shown in the figure, the energy that injects based on the control ion of the present embodiment method for preparing Graphene may further comprise the steps:
The first step: inject carbon ion to catalytic substrate based at least a injection energy.Wherein, described catalytic substrate comprises any material low to the carbon dissolution degree, preferably, includes but not limited to: copper, nickel etc.
For example, as shown in Figure 5, inject carbon atom based on injecting energy E 1 to copper substrate 20 earlier, inject carbon atom based on injecting energy E 2 to copper substrate 20 more subsequently, preferably, energy E 1＞energy E 2, thus, be distributed in copper substrate 20 based on each carbon atom that injects energy E 1 and form doped layer 21, be distributed in copper substrate 20 based on each carbon atom that injects energy E 2 and form doped layer 22, as shown in Figure 6.
Second step: the catalytic substrate of injecting carbon ion is carried out annealing in process so that the carbon atom that injects is separated out, in order to form one deck graphene film layer at least on described catalytic substrate surface.
For example, catalytic substrate shown in Figure 6 20 is carried out annealing in process, make the carbon atom that is positioned at catalytic substrate 20 obtain energy, at this moment, being arranged in the more shallow carbon atom of the degree of depth (being the carbon atom of doped layer 22) will separate out earlier, and utilize the surface catalysis recrystallization of copper to become graphene film layer 23, being arranged in the carbon atom of putting than deep-seated (being the carbon atom of doped layer 21) subsequently also can separate out, this layer carbon is at first with graphene film layer 23 jack-up, and then contact with copper surface, and the surface catalysis that the is beneficial to copper second layer graphene thin layer 24 of growing, as shown in Figure 7.
The 3rd step: remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed to obtain at least one layer graphene thin layer.Wherein, can adopt etchant solution to remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed.
For example, adopt FeCl
3Solution removes the copper substrate of structure shown in Figure 7 to obtain two-layer graphene film layer 23 and 24, as shown in Figure 8 as etchant solution.
Based on the various embodiments described above, those skilled in the art should understand that, preparation N (N 〉=1) layer graphene thin layer, as long as on catalytic substrate, by injecting the carbon atom of different-energy successively, carbon atom is distributed in the catalytic substrate of different depth successively, annealing then, make the carbon atom that is positioned at different depth obtain energy, being positioned at the more shallow carbon atom of the degree of depth will separate out earlier, and utilizes the surface catalysis recrystallization of copper to become graphene film, being positioned at the carbon of putting than deep-seated subsequently also can separate out, the carbon atom of putting than deep-seated is the Graphene jack-up of the ground floor that forms of crystallization at first, and then contacts with the copper surface, and the surface catalysis that the is beneficial to copper second layer graphene film of growing, therefore, the different injection energy of N kind is arranged, just can prepare the graphene film of N layer, describe in detail no longer one by one at this.
In sum, the graphene film that the method that the energy that injects based on the control ion of the present invention prepares Graphene obtains, advantage such as have that quality is good, large scale and the number of plies are controlled.Than the SiC sublimed method, the Graphene of this law preparation is easy to shift; Compare and chemical vapour deposition technique, the Graphene of this law preparation has the controlled characteristics of the number of plies.In addition, ion implantation technique, annealing technology all are very ripe technology at present semicon industry, so this law can promote Graphene quickly in the extensive use of semi-conductor industry circle.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (6)
1. an energy that injects based on the control ion prepares the method for Graphene, it is characterized in that the method that the described energy that injects based on the control ion prepares Graphene comprises step at least:
1) injects carbon ion based at least a injection energy to catalytic substrate;
2) catalytic substrate of injecting carbon ion is carried out annealing in process so that the carbon ion that injects is separated out, in order to form one deck graphene film layer at least on described catalytic substrate surface;
3) remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed to obtain at least one layer graphene thin layer.
2. the energy that injects based on the control ion according to claim 1 prepares the method for Graphene, and it is characterized in that: described step 1) also comprises:
Repeatedly inject carbon ion to catalytic substrate in the mode that the injection energy successively decreases.
3. the energy that injects based on the control ion according to claim 1 and 2 prepares the method for Graphene, and it is characterized in that: the material of described catalytic substrate comprises the material low to the carbon dissolution degree.
4. the energy that injects based on the control ion according to claim 1 prepares the method for Graphene, and it is characterized in that: the material of described catalytic substrate comprises copper.
5. the energy that injects based on the control ion according to claim 1 prepares the method for Graphene, and it is characterized in that: described step 3) also comprises:
Adopt etchant solution to remove the described catalytic substrate of the structure of one deck graphene film layer at least that formed to obtain at least one layer graphene thin layer.
6. the energy that injects based on the control ion according to claim 5 prepares the method for Graphene, and it is characterized in that: described etchant solution comprises FeCl
3Solution.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103523770A (en) * | 2013-10-18 | 2014-01-22 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphene |
| CN104466284A (en) * | 2014-12-11 | 2015-03-25 | 哈尔滨东方报警设备开发有限公司 | Solar battery for portable gas detector |
| CN110550869A (en) * | 2019-10-12 | 2019-12-10 | 北京大学 | Method for preparing graphene glass with assistance of ion implantation and graphene glass |
| CN110759334A (en) * | 2019-12-06 | 2020-02-07 | 上海集成电路研发中心有限公司 | Graphene channel structure and manufacturing method thereof |
| CN111146144A (en) * | 2019-12-16 | 2020-05-12 | 上海集成电路研发中心有限公司 | Method for preparing high-conductivity copper interconnection line |
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2012
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| WO2010096646A2 (en) * | 2009-02-20 | 2010-08-26 | University Of Florida Research Foundation, Inc. | Graphene processing for device and sensor applications |
| US20110189406A1 (en) * | 2010-02-01 | 2011-08-04 | Korea Advanced Institute Of Science And Technology | Method of forming graphene layer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103523770A (en) * | 2013-10-18 | 2014-01-22 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphene |
| CN103523770B (en) * | 2013-10-18 | 2015-08-05 | 中国科学院上海微***与信息技术研究所 | A kind of preparation method of Graphene |
| CN104466284A (en) * | 2014-12-11 | 2015-03-25 | 哈尔滨东方报警设备开发有限公司 | Solar battery for portable gas detector |
| CN110550869A (en) * | 2019-10-12 | 2019-12-10 | 北京大学 | Method for preparing graphene glass with assistance of ion implantation and graphene glass |
| CN110759334A (en) * | 2019-12-06 | 2020-02-07 | 上海集成电路研发中心有限公司 | Graphene channel structure and manufacturing method thereof |
| CN110759334B (en) * | 2019-12-06 | 2023-07-28 | 上海集成电路研发中心有限公司 | Graphene channel structure and manufacturing method thereof |
| CN111146144A (en) * | 2019-12-16 | 2020-05-12 | 上海集成电路研发中心有限公司 | Method for preparing high-conductivity copper interconnection line |
| CN111146144B (en) * | 2019-12-16 | 2023-11-07 | 上海集成电路研发中心有限公司 | Method for preparing high-conductivity copper interconnection wire |
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