CN103247510B - Inductively coupled plasma processing method and inductively coupled plasma processing apparatus - Google Patents
Inductively coupled plasma processing method and inductively coupled plasma processing apparatus Download PDFInfo
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- CN103247510B CN103247510B CN201310047105.8A CN201310047105A CN103247510B CN 103247510 B CN103247510 B CN 103247510B CN 201310047105 A CN201310047105 A CN 201310047105A CN 103247510 B CN103247510 B CN 103247510B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides an inductively coupled plasma processing method and an inductively coupled plasma processing apparatus, wherein the inductively coupled plasma processing is carried out according to the design of a desired processing distribution. The inductively coupled plasma processing operation apparatus provided with high-frequency antennas carries out a first processing operation and a second processing operation at different times so as to obtain the desired processing distribution on a substrate at the ending time. The high-frequency antennas are composed of an outside antenna and an inside antenna, wherein the outside antenna is supplied with high-frequency power to form a spiral outside induced electric field and the inside antenna concentrically arranged inside the outside antenna is also supplied with high-frequency power to form a spiral inside induced electric field. During the first processing period, a relatively large current flows through the inside antenna and the first processing operation is carried out by means of the plasma locally generated by the inside induced electric field corresponding to the inside antenna. During the second processing period, a relatively large current flows through the outside antenna and the second processing operation is carried out by means of the plasma locally generated by the outside induced electric field corresponding to the outside antenna.
Description
Technical field
The present invention relates to flat faced display（FPD：Flat Pannel Display）Glass substrate of manufacture etc. is located
Reason substrate is implemented inductively（Inductive）The inductively coupled plasma processing method of corona treatment and inductively
Plasma processing apparatus.
Background technology
In liquid crystal indicator（LCD：Liquid Crystal Display）Deng flat faced display（FPD）Manufacture work
In sequence, exist the substrate to glass system carry out plasma etching, into film process etc. corona treatment operation, in order to enter
The such corona treatment of row, can use at the various plasmas such as plasma-etching apparatus, plasma CVD equipment
Reason device.As plasma processing apparatus, at present, capacitance coupling plasma processing meanss are used mostly, but, recently,
With the inductively coupled plasma that can obtain advantage as highdensity plasma with condition of high vacuum degree
（Inductively Coupled Plasma：ICP）Processing meanss are enjoyed gazes at.
It is high in the upside configuration of the dielectric window of the roof for constituting process container in inductive couple plasma processing device
Frequency antenna, wherein, the processed substrate of process container storage, by processing gas being supplied into container and being supplied the high frequency antenna
To RF power, induction field is formed in process container across dielectric window, produced inductively etc. by the induction field
Gas ions, using the inductively coupled plasma corona treatment of regulation is implemented to the substrate that is processed.As high frequency antenna,
It is used mostly and is formed as circinate coil antenna.
In the inductive couple plasma processing device using flat annular antenna, the flat plane antenna in process container
Underface space generate plasma, but, now, according to the electric field of the induction field of each position immediately below antenna
Intensity, the distribution with high plasma density region and low plasma density area, therefore, the pattern of flat annular antenna
Shape becomes the key factor for determining plasma density distribution, by the density for adjusting flat annular antenna, makes induction field
Homogenization, generates uniform plasma.
Therefore, motion has following technology：Diametrically interval is set and has the two of inboard portion and Outboard Sections
The antenna element of individual coil antenna, adjusts their impedance, and the current value in the two coil antenna portions of independent control is controlled by each
Plasma diffusion that individual coil antenna portion produces and the coincidence system of Density Distribution that formed, thus, control is inductively etc.
The overall distribution density of gas ions（Patent documentation 1）.
Prior art literature
Patent documentation
Patent documentation 1：Japanese Unexamined Patent Publication 2007-311182 publications
The content of the invention
The problem for solving is wanted in invention
But, even with such antenna element with inboard portion and two coil antennas of Outboard Sections
Inductively coupled plasma process, when the condition of high voltage of more than 100mTorr is carried out, plasma is difficult to spread, therefore easily
Partly concentrate and be created on the position of the easy maintenance plasma of the configuration for not relying on above-mentioned two coil antenna, pass through
Adjustment antenna current, is also difficult to integrally maintain substrate the plasma of desired Density Distribution sometimes, cannot be desired
Process distribution, typical case for cannot uniformly process distribution.
Even if in addition, be not such condition of high voltage, even if the current value in two coil antenna portions of independent control, due to each
The plasma that individual antenna is generated mutually affects, and is also difficult to obtain desired plasma density distribution sometimes.It is such to ask
Topic, be not limited to patent documentation 1 has a case that two coil antennas, generally produces when with multiple spiral helicine antennas.
The present invention is that in view of such situation is completed, problem is to provide a kind of forming spiral helicine day using multiple
When line carries out inductively coupled plasma process, inductively coupled plasma process can be carried out with desired process distribution
Inductively coupled plasma processing method and inductive couple plasma processing device.
For solving the scheme of problem
In order to solve above-mentioned problem, first technical scheme of the present invention is to provide a kind of inductively coupled plasma to process
Method, it is to carry out inductively coupled plasma process inductively to substrate using inductive couple plasma processing device
Method of plasma processing, the method is characterized in that：Above-mentioned inductive couple plasma processing device possesses：Storage substrate is simultaneously
Implement the process chamber of corona treatment to it；The mounting table of substrate is loaded in above-mentioned process chamber；Supply into above-mentioned process chamber
To the treating-gas supply system of processing gas；The gas extraction system that above-mentioned process chamber is exhausted；Antenna element, it has
Above-mentioned process it is indoor with substrate accordingly plane earth configuration, high frequency antenna for generating inductively coupled plasma；With it is right
The high frequency power supply component of above-mentioned high frequency antenna supply high frequency electric power, above-mentioned high frequency antenna has：Be supplied to RF power and
Form outside induction field is formed as spiral helicine outboard antenna；Arrange with the inner concentric shape in above-mentioned outboard antenna
, be supplied to RF power and form inner side induction field be formed as spiral helicine inboard antennas, it is above-mentioned inductively wait from
Daughter processing method, implements first and processes and second processing so that the moment terminated in process obtains to substrate in the different time
Distribution is processed to desired, wherein, first is processed as the electricity that flows respectively in above-mentioned inboard antennas and above-mentioned outboard antenna
In the comparison of stream, the electric current of the relatively large current value that makes to be flowed in above-mentioned inboard antennas, using with above-mentioned inboard antennas
The above-mentioned inner side induction field that corresponding part is formed generates the plasma of local, is processed, and second processing is above-mentioned
In the comparison of the electric current flowed respectively in inboard antennas and above-mentioned outboard antenna, make to be flowed in above-mentioned outboard antenna relatively large
Current value electric current, generate local using the above-mentioned outside induction field formed in part corresponding with above-mentioned outboard antenna
Plasma is processed.
In above-mentioned first technical scheme, above-mentioned antenna element possesses and is used for above-mentioned inboard antennas and above-mentioned outside
The connection of high frequency electric source that antenna is powered and with from adapter to the power supply of above-mentioned inboard antennas and above-mentioned outboard antenna
The power supply section in path, is formed with the inboard antennas circuit and outboard antenna circuit including above-mentioned each antenna and each power supply section, also has
There is impedance adjustment component, the impedance adjustment component is at least one of above-mentioned inboard antennas circuit and above-mentioned outboard antenna circuit
Impedance be adjusted, so as to adjust the current value of above-mentioned each antenna, using above-mentioned impedance adjustment component to for generate it is above-mentioned
The current value of the plasma of local is adjusted.Now, above-mentioned first process can be by making to be flowed in above-mentioned inboard antennas
Internal current current value be as relative larger value the first current value, above-mentioned outboard antenna flowing outer current
Current value is to carry out as the second current value of relative small value, and above-mentioned second processing can be by making in above-mentioned outboard antenna stream
The current value of dynamic outer current is as the 3rd current value of relative larger value, in the internal current of above-mentioned inboard antennas flowing
Current value be to carry out as the 4th current value of relative small value.Above-mentioned first processes periodically to enter with above-mentioned second processing
OK.
The outside supplied to the current value of the internal current of above-mentioned inboard antennas supply and to above-mentioned outboard antenna can be made
The current value of electric current can be independently varied, can make the current value of above-mentioned internal current for generate the grade of above-mentioned local from
Mechanical periodicity between first current value of daughter and the 4th current value less than above-mentioned first current value to specify, can make
The current value of outer current is stated in the 3rd current value of the plasma for being used to generate above-mentioned local and than above-mentioned 3rd current value
With the cycle of above-mentioned regulation and with the phase place change different from above-mentioned internal current between the second little current value.Now, on
It can be the half period to state the phase contrast between internal current and above-mentioned outer current.In addition, above-mentioned internal current and above-mentioned outside
Electric current is supplied with pulse type.
Above-mentioned second current value and above-mentioned 4th current value are able to as little to above-mentioned outboard antenna and above-mentioned inner side day
Line does not produce the value of the degree of inductively coupled plasma or 0.
It is distributed according to the content for processing and the process to be obtained during above-mentioned first is processed and during above-mentioned second processing
It is appropriately configured.Now, it is set as during above-mentioned first can be processed and during above-mentioned second processing identical.
Being used in the current value and above-mentioned second processing for generating the plasma of local in above-mentioned first process
The current value of the plasma of local is generated, can suitably be set according to the content for processing and the process to be obtained distribution
It is fixed.Now, in the current value and above-mentioned second processing for generating the plasma of local during above-mentioned first can be processed
The current value for generating the plasma of local be set as it is identical.
Second technical scheme of the present invention is to provide a kind of inductively coupled plasma processing method, and it is that use feeling should
Coupled plasma processing meanss carry out the inductively coupled plasma processing method of inductively coupled plasma process to substrate,
The method is characterized in that：Above-mentioned inductive couple plasma processing device possesses：Storage substrate simultaneously implements plasma to it
The process chamber of process；The mounting table of substrate is loaded in above-mentioned process chamber；The process of processing gas is supplied into above-mentioned process chamber
Gas supply system；The gas extraction system that above-mentioned process interior is exhausted；Antenna element, its have above-mentioned process it is indoor with
Substrate accordingly plane earth configuration, high frequency antenna for generating inductively coupled plasma；With to above-mentioned high frequency antenna supply
To the high frequency power supply component of RF power, above-mentioned high frequency antenna have be supplied to RF power and form the shape of induction field
Become spiral helicine multiple antennas, repeatedly enforcement is processed in different time to different antennas so that when process terminates
Obtain desired process to substrate to be distributed, above-mentioned process makes at least one antenna in the part as above-mentioned multiple antennas
The electric current of the relatively large current value of middle flowing, using the above-mentioned induction field generation office formed in part corresponding with the antenna
The plasma in portion.
3rd technical scheme of the present invention is to provide a kind of inductive couple plasma processing device, it is characterised in that
Possess：Receive substrate and implement the process chamber of corona treatment to it；The mounting table of substrate is loaded in above-mentioned process chamber；To
The treating-gas supply system of above-mentioned process interior supply processing gas；The gas extraction system that above-mentioned process interior is exhausted；
Antenna element, its have above-mentioned process it is indoor with substrate accordingly plane earth configuration, for generating inductive couple plasma
The high frequency antenna of body；With the high frequency power supply component to above-mentioned high frequency antenna supply high frequency electric power, above-mentioned high frequency antenna has：
It is supplied to RF power and forms outside induction field and be formed as spiral helicine outboard antenna；With in above-mentioned outboard antenna
It is that side is concentrically arranged, be supplied to RF power and form inner side induction field and be formed as spiral helicine inboard antennas, also
Possesses control unit, it is controlled as follows：Implement first in the different time to process and second processing so that terminate in process
Moment obtains desired process to substrate and is distributed, wherein, first is processed as in above-mentioned inboard antennas and above-mentioned outboard antenna
In the comparison of the electric current for flowing respectively, the electric current of the relatively large current value that makes to be flowed in above-mentioned inboard antennas, using with
The above-mentioned inner side induction field that the corresponding part of above-mentioned inboard antennas is formed generates the plasma of local and is processed, at second
Reason is in the comparison of the electric current flowed respectively in above-mentioned inboard antennas and above-mentioned outboard antenna, to make to be flowed in above-mentioned outboard antenna
The electric current of dynamic relatively large current value, using the above-mentioned outside induction field formed in part corresponding with above-mentioned outboard antenna
The plasma for generating local is processed.
4th technical scheme of the present invention is to provide a kind of inductive couple plasma processing device, it is characterised in that
Possess：Receive substrate and implement the process chamber of corona treatment to it；
The mounting table of substrate is loaded in above-mentioned process chamber；The processing gas that processing gas are supplied into above-mentioned process chamber are supplied
To system；The gas extraction system that above-mentioned process interior is exhausted；Antenna element, it has in above-mentioned process interior and substrate pair
High frequency antenna configure with answering ground level, for generating inductively coupled plasma；With to above-mentioned high frequency antenna supply high frequency
The high frequency power supply component of electric power, above-mentioned high frequency antenna have be supplied to RF power and form induction field be formed as spiral shell
Multiple antennas of rotation shape, are also equipped with control unit, and it is controlled as follows：To different antennas at different time repeatedly enforcement
Reason so that the moment terminated in process obtains desired process to substrate and is distributed, and above-mentioned process is made as above-mentioned multiple days
Flow the electric current of relatively large current value at least one antenna of a part for line, using in part corresponding with the antenna
The above-mentioned induction field for being formed generates the plasma of local.
Invention effect
According to the present invention, implement first in the different time and process and second processing so that at the moment pair that process terminates
Substrate obtains desired process and is distributed, wherein, first is processed as the relatively large current value that flows in above-mentioned inboard antennas
Electric current, using part corresponding with above-mentioned inboard antennas formed above-mentioned inner side induction field generate local plasma
Processed, second processing is the electric current of relatively large current value of flowing in above-mentioned outboard antenna, using outer with above-mentioned
The above-mentioned outside induction field that antenna corresponding part in side is formed generates the plasma of local and is processed, therefore, even if
When being difficult to integrally generate desired inductively coupled plasma to substrate of condition of high voltage etc., it is also possible to obtain desired place
Reason distribution.
Description of the drawings
Fig. 1 is the section for representing the inductive couple plasma processing device involved by an embodiment of the invention
Figure.
Fig. 2 is to represent the inductively coupled plasma day used in the inductive couple plasma processing device of Fig. 1
The top view of one example of the high frequency antenna of line unit.
Fig. 3 is the power supply circuits for representing the high frequency antenna used in the inductive couple plasma processing device of Fig. 1
Figure.
Fig. 4 is to schematically illustrate that impedance adjustment can be carried out by using variable condenser, makes the electric current of outboard antenna circuit
IoutWith the electric current I of inboard antennas circuitinThe figure for freely changing.
Fig. 5 is represented by an embodiment of the invention in the underface of inboard antennas and the underface of outboard antenna
It is different according to the time and generate the plasma of local, carry out the state of plasma when inductively coupled plasma is processed with
Etch-rate（E/R）Relation（a）And result（b）Figure.
Fig. 6 is the figure of the periodically variable example of current value for representing the current value and outboard antenna for making inboard antennas.
Fig. 7 is the figure of the example for representing waveform when making curent change be pulse type.
Fig. 8 is the top view of three coil antennas of other examples for being denoted as high frequency antenna.
Fig. 9 is the top view for representing other the antenna examples used in high frequency antenna.
Figure 10 is the top view for representing the Part I used in the antenna of Fig. 9.
Figure 11 is the top view for representing the Part II used in the antenna of Fig. 9.
Figure 12 is the top view for representing the other example used in high frequency antenna.
Figure 13 is the top view of the other example for representing high frequency antenna.
Description of reference numerals
1 main body container
2 dielectric walls（Dielectric members）
3 antenna chambers
4 process chambers
13 high frequency antennas
13a outboard antennas
13b inboard antennas
14 adapters
15 high frequency electric sources
16a, 16b power supply part
19th, 19a, 19b supply lines
20 treating-gas supply systems
21 variable condensers
22a, 22b terminal
23 mounting tables
30 exhaust apparatus
50 antenna elements
51 power supply sectioies
61st, 62,63,64,71,72,73,74 antenna line
91a outboard antenna circuits
91b inboard antennas circuits
100 control units
101 user interfaces
102 storage parts
G substrates
Specific embodiment
Hereinafter, referring to the drawings, embodiments of the present invention are illustrated.Fig. 1 is represented involved by an embodiment of the invention
And inductive couple plasma processing device sectional view, Fig. 2 is to represent institute in the inductive couple plasma processing device
The top view of the antenna element for using.The device, such as the metal on FPD glass substrates during formation thin film transistor (TFT)
During the etching of film, ito film, oxide-film etc., the ashing of etchant resist are processed.Illustrating as FPD has liquid crystal display（LCD）, it is electroluminescent
It is luminous（Electro Luminescence：EL）Display, plasm display panel（PDP）Deng.
The plasma processing apparatus have what the aluminum being anodized by conductive material such as internal face was constituted
The air-tightness main body container 1 of square tube shape.The main body container 1 is assembled in the way of it can decompose, electrically grounded using earth lead 1a.
Main body container 1 is divided into antenna chamber 3 and process chamber 4 by dielectric walls about 2.Therefore, dielectric walls 2 constitute the top of process chamber 4
Wall, plays a role as the dielectric window through the induction field formed by high frequency antenna described later.Dielectric walls 2 are by Al2O3Deng
Ceramics, quartz etc. are constituted.
The shower nozzle framework 11 of processing gas supply is embedded with the lower portion of dielectric walls 2.Shower nozzle framework 11 is for example
Crosswise is set to, with the beam action as support dielectric wall 2 from below.Additionally, supporting the spray of above-mentioned dielectric walls 2
Head framework 11 is in by multiple hooks（It is not shown）It is suspended to the state at the top of main body container 1.
The shower nozzle framework 11 is constituted using conductive material, desirably employs metal for example in the way of not producing pollutant to it
Inner surface or outer surface carried out the aluminum of anodized and constituted.The shower nozzle framework 11 is electrically grounded.
Horizontally extending gas flow path 12 is formed in the shower nozzle framework 11, the gas flow path 12 is more with what is extended downwards
Individual gas discharge hole 12a connections.On the other hand, in the upper face center of dielectric walls 2, in the way of connecting with gas flow path 12
It is provided with gas supply pipe 20a.Gas supply pipe 20a and is supplied from the top of main body container 1 to its outside insertion containing gas
The gas supply system 20 in source and valve system etc. connects.Therefore, in corona treatment, supply from treating-gas supply system 20
The processing gas given are supplied in shower nozzle framework 11 via gas supply pipe 20a, from the gas discharge hole 12a of its lower surface to
Discharge in process chamber 4.
It is provided with what inside side projected between the side wall 3a of the antenna chamber 3 in main body container 1 and the side wall 4a of process chamber 4
Supporting frame 5, on the supporting frame 5 dielectric walls 2 are placed with.
It is equipped comprising high frequency in antenna chamber 3（RF）The antenna element 50 of antenna 13.High frequency antenna 13 is via adapter
14 are connected with high frequency electric source 15.In addition, high frequency antenna 13 is by 2 points of the distance piece 17 that is made up of insulant and dielectric walls
From.And, by supplying RF power of such as frequency for 13.56MHz from high frequency electric source 15 to high frequency antenna 13, in process chamber
Induction field is formed in 4, it is using the induction field that the processing gas supplied from shower nozzle framework 11 are plasmarized.Additionally, right
Antenna element 50 is described later.
The lower section of process chamber 4 is provided with the FPD glass substrates for loading rectangular shape（Hereinafter referred to as substrate）G
Mounting table 23 so as to it is opposed with high frequency antenna 13 across dielectric walls 2.Mounting table 23 adopts conductive material such as surface quilt
The aluminum that anodized is crossed is constituted.The substrate G of mounting table 23 is placed in by electrostatic chuck（It is not shown）Absorption keeps.
Mounting table 23 is accommodated in insulator frame 24, and is supported by hollow pillar 25.Pillar 25 is by main body container 1
Bottom maintains airtight conditions and the insertion bottom, is supported on the elevating mechanism being disposed in outside main body container 1（It is not shown）, in substrate
During the carrying-in/carrying-out of G mounting table 23 is driven along the vertical direction by elevating mechanism.Additionally, in the insulator of storage mounting table 23
The corrugated tube 26 for airtightly surrounding pillar 25 is equipped between the bottom of frame 24 and main body container 1, thus, even if in mounting table 23
It is also ensured that the air-tightness in process container 4 when lower mobile.In addition, being provided with for moving in the side wall 4a of process chamber 4
Carrying-in/carrying-out mouth 27a for going out substrate G and the gate valve 27 for being opened and closed carrying-in/carrying-out mouth 27a.
Mounting table 23 by the supply lines 25a that is arranged in hollow pillar 25, via adapter 28 and high frequency electric source 29
Connection.RF power that the high frequency electric source 29 is biased in plasma treatment to mounting table 23, such as frequency are
The RF power of 3.2MHz.Using the RF power of the bias, form self-bias, by the grade generated in process chamber 4 from
Ion in daughter effectively guides substrate G into.
Also, it is provided with mounting table 23：For temperature, including ceramic heater etc. the heating of control base board G
The temperature control device of equipment, refrigerant flow path etc.；And temperature sensor（It is not shown）.These mechanisms, the pipe arrangement of part, match somebody with somebody
Line is derived by hollow pillar 25 to outside main body container 1.
The bottom of process chamber 4 is connected via exhaustor 31 with the exhaust apparatus 30 including vacuum pump etc..Using the aerofluxuss dress
30 are put, process chamber 4 is exhausted, in corona treatment, by the interior vacuum atmosphere for setting and being maintained at regulation of process chamber 4
（Such as 1.33Pa）.
Rear side in the substrate G for being placed in mounting table 23, i.e. mounting table 23 mounting substrate G surface and substrate G
The back side between be formed with cooling space（It is not shown）, it is provided with the He as heat transfer gas for supplying certain pressure
The He gas flow paths 41 of gas.By so supplying heat transfer gas to the rear side of substrate G, vacuum infrabasal plate can be avoided
The temperature of G rises, temperature change.
Each constituting portion of the plasma processing apparatus is formed and by microprocessor（Computer）The control unit 100 of composition connects
The composition for connecing and being controlled.In addition, the control unit 100 is connected with user interface 101, the user interface 101 is included for managing
The keyboard of the input operation for carrying out instruction input etc. that reason person's plasma processing meanss are managed, by corona treatment
Display that the operational situation visualization of device shows etc..Also, control unit 100 is connected with storage part 102, the storage part 102
Store various process for being performed in plasma processing apparatus by the control realization of control unit 100 control program,
For the program i.e. processing scheme of process to be performed in each constituting portion of plasma processing apparatus according to treatment conditions.Process side
Case is stored in the storage medium in storage part 102.Storage medium can make hard disk, the semiconductor memory for being built in computer,
It can be the mobility storage medium of CDROM, DVD, flash memory etc..Alternatively, it is also possible to from other devices via such as dedicated line
The appropriate transfer scheme in road.And it is possible to as needed, read from storage part 102 according to instruction from user interface 101 etc. and appointed
The processing scheme of meaning, performs in control unit 100, thus under the control of control unit 100, carries out in plasma processing apparatus
Desired process.
Then, above-mentioned antenna element 50 is described in detail.
Antenna element 50 has as mentioned above high frequency antenna 13, also with by via the high frequency power supply of adapter 14 extremely
The power supply section 51 of high frequency antenna 13.
As shown in Fig. 2 high frequency antenna 13 forms plane, profile forms rectangular shape（Rectangular shape）, its configuring area
Domain is corresponding with rectangular substrate G.
High frequency antenna 13 has the outboard antenna 13a for the constituting Outboard Sections and inboard antennas 13b for constituting inboard portion.Outward
Side antenna 13a and inboard antennas 13b are the planar antennas that profile is formed as rectangular shape.And, these outboard antennas 13a
Same heart shaped is configured to inboard antennas 13b.
The outboard antenna 13a of Outboard Sections is constituted, as shown in Fig. 2 being configured to be made up of conductive material, such as copper
It is multiple that 4 antenna lines 61,62,63,64 winding and causing is integrally formed that helical form obtains（Quadruple）Antenna.Specifically, day
The position that line line 61,62,63,64 staggers respectively 90 ° is wound, and the configuring area of antenna line forms substantially architrave shape so that
Exist plasma die down tendency corner turn ratio side central part the number of turn it is many.In the example in the figures, the circle in corner
Number is 3, and the number of turn of the central part on side is 2.
The inboard antennas 13b of inboard portion is constituted, as shown in Fig. 2 being configured to be made up of conductive material, such as copper
It is multiple that 4 antenna lines 71,72,73,74 winding and causing is integrally formed that helical form obtains（Quadruple）Antenna.Specifically, day
The position that line line 71,72,73,74 staggers respectively 90 ° is wound, and the region of antenna line configuration forms substantially architrave shape so that
Exist plasma die down tendency corner turn ratio side central part the number of turn it is many.In the example in the figures, the circle in corner
Number is 3, and the number of turn of the central part on side is 2.
Be formed as the antenna line 61,62,63,64 via 4 terminal 22a and the antenna 13a laterally of supply lines 69 in central authorities
Power supply.In addition, be formed as via be configured at central authorities 4 terminal 22b and antenna line 71 from supply lines 79 to inboard antennas 13b,
72nd, 73,74 power supply.
Be provided near the central part of antenna chamber 34 the first power supply part 16a that antenna 13a laterally powers and to
4 the second power supply part 16b that inboard antennas 13b powers（1 is only illustrated in FIG）, under each first power supply part 16a
End is connected with the terminal 22a of outboard antenna 13a, and the lower end of each second power supply part 16b connects with the terminal 22b of inboard antennas 13b
Connect.4 the first power supply part 16a are connected with supply lines 19a, and in addition 4 the second power supply part 16b are connected with supply lines 19b, this
The branch of supply lines 19 that a little supply lines 19a, 19b extend from Self Matching device 14.Supply lines 19,19a, 19b, power supply part 16a,
16b, terminal 22a, 22b, supply lines 69,79 constitute the power supply section 51 of antenna element 50.
Supply lines 19a is provided with variable condenser 21, in supply lines 19b variable condenser is not provided with.So, by 4
Individual first power supply part 16a, supply lines 19a, variable condenser 21 and outboard antenna 13a constitute outboard antenna circuit, by 4 the
Two power supply part 16b, supply lines 19b and inboard antennas 13b constitute inboard antennas circuit.
As described later, by the electric capacity of regulation variable condenser 21（Capacity）, the impedance of outboard antenna circuit is controlled, thus
The magnitude relationship of the electric current flowed in outside antenna circuit and inboard antennas circuit can be adjusted.Variable condenser 21 is used as outer
The current control division of side antenna circuit plays a role.
The impedance control of high frequency antenna 13 is illustrated with reference to Fig. 3.Fig. 3 is the figure of the power supply circuits for representing high frequency antenna 13.Such as
Shown in the figure, the RF power from high frequency electric source 15 is supplied to outboard antenna circuit 91a and inboard antennas via adapter 14
Circuit 91b.Here, outboard antenna circuit 91a contains outboard antenna 13a and variable condenser 21, the resistance of outboard antenna circuit 91a
Anti- ZoutIts capacitance variations can be made by adjusting the position of variable condenser 21.On the other hand, inboard antennas circuit 91b is only
Including inboard antennas 13b, its impedance ZinIt is fixed.Now, the electric current I of outboard antenna circuit 91aoutWith inboard antennas circuit
The electric current I of 91binAccording to ZoutAnd ZinRatio and change, therefore, it is possible to correspond to impedance ZoutChange make electric current IoutAnd electricity
Stream IinChange.That is, variable condenser 21 is made to be connected with outboard antenna 13a, the impedance that can carry out outboard antenna circuit 91a is adjusted
Section, as schematically illustrated in fig. 4, can make the electric current I of outboard antenna circuit 91aoutWith the electric current I of inboard antennas circuit 91binFreely
Ground change.And, the electric current flowed in the electric current of outboard antenna 13a flowings and in inboard antennas 13b by so control can
Control in the outside induction field of position corresponding with outboard antenna 13a formation and in position corresponding with inboard antennas 13b shape
Into inner side induction field, thereby, it is possible to control using induction field generate plasma density distribution.In addition it is also possible to
Capacitor is also provided with inboard antennas circuit 91b, the controlling of electric current is further improved.
Then, illustrate to use inductive couple plasma processing device as constructed as above to implement at plasma substrate G
Process action when reason, such as plasma etch process or plasma ashing are processed.Following process action is according to control
The control in portion processed 100 is carried out.
First, in the state of gate valve 27 is opened, from carrying-in/carrying-out mouth 27a carrying mechanism is utilized（It is not shown）By substrate G
Move in process chamber 4, after being placed in the mounting surface of mounting table 23, using electrostatic chuck（It is not shown）Substrate G is fixed on into load
Put on platform 23.Then, by the processing gas supplied in from treating-gas supply system 20 to process chamber 4 from the gas of shower nozzle framework 11
Body tap 12a is discharged into process chamber 4, and using exhaust apparatus 30 via exhaustor 31 to vacuum exhaust in process chamber 4,
Thus the indoor vacuum atmosphere for being maintained regulation will be processed.
In addition, now, in order to avoid temperature rising, the temperature change of substrate G, to the cooling space of the rear side of substrate G,
The He gases as heat transfer gas are supplied via He gas flow paths 41.
Then, the high frequency of such as 13.56MHz is applied to high frequency antenna 13 from high frequency electric source 15, thus across dielectric walls 2
Uniform induction field is formed in process chamber 4.Using such induction field for being formed, by processing gas etc. in process chamber 4
Gas ions, generate highdensity inductively coupled plasma.Using the plasma, substrate G is carried out as plasma
The plasma etch process of process or plasma ashing are processed.
Now, as described above, high frequency antenna 13 the outboard antenna 13a of Outboard Sections and is constituted in inboard portion by constituting
Side antenna 13b intervals are concentrically configured and constituted, and make the outboard antenna 13a and variable condenser 21 of composition Outboard Sections
Connection, can carry out the impedance adjustment of outboard antenna circuit 91a, therefore, it is possible to make the electric current I of outboard antenna circuit 91aoutWith
The electric current I of inboard antennas circuit 91binFreely change.
Space of the inductively coupled plasma immediately below high frequency antenna 13 generates plasma, but now each position etc.
Plasma density is corresponding with the electric field intensity of each position, therefore, the existing position by adjusting variable condenser 21, control is outside
In the antenna 13a of side flow electric current and in inboard antennas 13b flow electric current and control electric-field intensity distribution, thus control etc.
Plasma density is distributed.
But, when such inductively coupled plasma process is carried out under the conditions of the high pressure of more than 100mTorr, etc.
Gas ions are difficult to spread, therefore, it is unrelated with the configuration of antenna 13, easily generate plasma in the easy position concentration of local for maintaining
Body, even if adjustment antenna current, there is also and be difficult to integrally maintain substrate desired Density Distribution, can not obtain institute's phase sometimes
The process distribution of prestige, typically uniform process are distributed.
So, in the present embodiment, as shown in figure 4, using the current control function based on variable condenser 21, not
The same time implements first and processes and second processing, thus, prevents the plasma obtained based on outboard antenna 13a and based on interior
The plasma that side antenna 13b is obtained mutually is affected so as to plasma concentrates on unplanned position, therefore, it is possible to process
The moment of end obtains desired process and is distributed, typically uniform to process distribution, wherein, first is processed as in inner side day
The electric current I flowed in line 13binValue and outboard antenna 13a in flow electric current IoutValue magnitude relationship in, make electric current Iin
For the first relatively large current value, electric current I is madeoutValue be the second relatively small current value, in inboard antennas 13b just
Lower section generates the plasma of local（Interior plasma）Processed, second processing is the electricity flowed in outboard antenna 13a
Stream IoutValue and inboard antennas 13b in flow electric current IinValue magnitude relationship in, make electric current IoutFor relatively large
Three current values, make electric current IinValue be the 4th relatively small current value, outboard antenna 13a underface generate local etc.
Gas ions（Outer plasma）Processed.
During inductively coupled plasma i.e., under elevated pressure conditions is processed, even if work as being difficult under the electric power being typically supplied
It is logical when substrate G entirety uniformly or with the distribution planned maintains plasma, it is also possible to so maintain the plasma of local
The plasma of the local of the plasma and outside of the local crossed on the inside of the different time generates, can terminate in process
Moment obtains desired process and is distributed.
For example, such as Fig. 5（a）It is shown, the front half section for making process be only inner side inboard antennas 13b underface generation office
The plasma in portion（Interior plasma）The first process of process is etched, the second half section for making process is outside merely on outer side
The underface of antenna 13a generates the plasma of local（Outer plasma）The second processing of process is etched, as a result,
Can be such as Fig. 5（b）It is shown, uniform etch-rate is obtained in the face of substrate（E/R）.
But, enter in the front second half section for being divided into process, the interior plasma and outer plasma that generate local as mentioned above
When row is processed, temperature difference is produced near plasma generating unit and near non-plasma generating unit, existed by the temperature difference
The problem that part in process chamber 4 and substrate G are made a difference.In this case, by the way that with the short time, alternately switching is utilized
The first second processing for processing and being carried out using outer plasma that interior plasma is carried out, is able to maintain that the effect above, and
Suppress the impact of such temperature difference.For typical case, as shown in fig. 6, using the location change of capacitor 21, making inboard antennas 13b
Current value periodically change between relatively large first current value and the 4th relatively small current value, while make outside
The current value of antenna 13a periodically changes between relatively small the second current value and the 3rd relatively large current value.
Now, due to making the electric current value changes of inboard antennas 13b and outboard antenna 13a using the change in location of capacitor 21, so, it is interior
The cycle phase of the electric current value changes of side antenna 13b and outboard antenna 13a is same, phase shifting half period.
Additionally, the time of the first time for processing and second processing is according to the content for processing and the process to be obtained distribution
Suitably set, these times can be with identical, it is also possible to which any time is long.By making these process times identical, easily
Obtain uniform process to be distributed.In addition, first current value and the 3rd current value of the plasma for generating local also according to
Process content and the process distribution to be obtained suitably set, and these values can be with identical, it is also possible to which any value is big.Pass through
Make these values identical, be readily obtained uniform process and be distributed.
In the present embodiment, control inboard antennas 13b's and outboard antenna 13a using the position adjustment of capacitor 21
Current value, it is thus impossible to inboard antennas 13b and the current value of outboard antenna 13a are independently varied, but, by making inner side
Antenna 13b and outboard antenna 13a are connected with single high frequency electric source, it is also possible to current value is independently changed.Now, in inner side
In antenna 13b and outboard antenna 13a, make the cycle phase of curent change same, but the electric current of inboard antennas 13b and outboard antenna 13a
Value changes phase contrast can also can be the cycle beyond the half period for the half period.
In addition, when electric current value changes are periodically made, it is possible to use it is pulse type that pulse generator etc. makes curent change,
Waveform now is not particularly limited, or Fig. 7（a）Shown square wave and Fig. 7（b）It is straight as shown triangular wave
The waveform, or Fig. 7 of wire（c）The waveform of curve as shown sine wave.In either case, can make
The maximum of electric current is the first current value, the 3rd current value, and the minima for making electric current is the 4th current value, the second current value.
Also, for generate local plasma the first relatively large current value and the 3rd current value can with identical,
Can also arbitrary current value it is big.In addition, the 4th relatively small current value and the second current value can be 0, it is possible to have rule
Fixed value.Make the plasma of local only when the underface of the underface of inboard antennas 13b, outboard antenna 13a generates, the 4th
Current value and the second current value are necessary for the little value to the degree for not producing inductively coupled plasma.
Additionally, for outboard antenna 13a and inboard antennas 13b, be formed as that four antenna lines stagger respectively 90 ° wind and
So that spiral helicine quadruple antenna is integrally formed into, but the quantity of antenna line is not limited to four, can be any number of many
Weight antenna, in addition, the angle for staggering is also not necessarily limited to 90 °.
Then, other examples of the structure of high frequency antenna are illustrated.
In the above example, exemplified with two coil antennas of outboard antenna 13a and inboard antennas 13b are set to one heart
Shape and constitute the situation of high frequency antenna, however, it can be and the coil antenna of more than three is configured to into concentric structure.
Fig. 8 represents the high frequency antenna of three ring-types obtained from three coil antennas of configuration.Here, illustrating, outermost will be configured at
The outermost antenna 113a of side, the intermediate antenna 113b for being configured at the most most inboard antennas 113c of inner side, being configured between which
It is set to high frequency antenna 113 obtained from same heart shaped.For convenience, the detailed construction of each antenna is omitted in Fig. 8, can be used
The antenna of the construction same with above-mentioned outboard antenna 13a and inboard antennas 13b.
In the case of the coil antenna being provided with more than three, with the above-mentioned high frequency antenna for being provided with two coil antennas
Situation it is identical, from a high frequency electric source branch to each coil antenna supply high frequency electric power, can be by each coil antenna
Supply lines on arrange variable condenser to control the electric current of each antenna.And, by the supply lines at least one antenna
Upper setting variable condenser, can carry out current control.With the feelings with the above-mentioned high frequency antenna for being provided with two coil antennas
In the case that condition is equal, each coil antenna carries out current control with different ratios, if setting the quantity of coil antenna as n,
Then capacitor can be set on the supply lines of the coil antenna of n-1.It is of course also possible to make each antenna with single high frequency electric source
Connection and independent control these electric currents.
At this point it is possible to All Time differently generates the plasma of local corresponding with each antenna, it is also possible to identical
The moment of time generates the plasma of plural local.Furthermore it is possible to make the value of electric current as above with the short time
Periodically change, it is also possible to make curent change be pulse type.
Then, other examples of the structure of each antenna are illustrated.
In the above example, by each antenna（Outboard antenna 13a, inboard antennas 13b, outermost antenna 113a, intermediate antenna
113b, most inboard antennas 113c）Be configured to ring-type, integratedly supply high frequency electric power, however, it is possible to so that each antenna have with it is each
These multiple regions can be independently supplied RF power by the corresponding multiple regions in the mutually different part of individual substrate.Thus,
Plasma distribution control can more subtly be carried out.For example, corresponding with rectangular substrate rectangular-shaped plane is constituted, with will be many
The helically wound Part I of the root antenna coil of wire and Part II, Part I is set to the linear rectangular plane of many antennas
Four corners of shape, and four corners are engaged in rectangular-shaped plane diverse location, Part II is set to many antenna lines and is formed
The central part on four sides of rectangular-shaped plane, and the central part on four sides is engaged in rectangular-shaped plane diverse location, can be to the
A part and Part II separately supply high frequency electric power.
Specific structure is illustrated with reference to Fig. 9～11.
For example, as shown in figure 9, outboard antenna 13a is being faced with the induction field for helping to plasma generation
The part of dielectric walls 2 is corresponding with rectangular substrate G rectangular-shaped as being monolithically fabricated（Architrave shape）Plane, also, with will be many
Root antenna coil of wire coiled and the Part I 213a that formed and Part II 213b.The antenna of Part I 213a is arranged
To form four corners of rectangular-shaped plane, and in engagement position four corners different from rectangular-shaped plane.In addition, second
The antenna for dividing 213b is set to form the central part on four sides of rectangular-shaped plane, and connects in the position different from rectangular-shaped plane
Close the central part on these four sides.Carry out via four terminal 222a and supply lines 269 to the power supply of Part I 213a, to
The power supply of two part 213b is carried out via four terminal 222b and supply lines 279, to these terminals 222a, 222b separately
Supply high frequency electric power.
As shown in Figure 10, Part I 213a is constituted and is rolled up four antenna lines 261,262,263,264 with staggering 90 ° respectively
Around quadruple antenna, formed in the face of dielectric walls 2 rectangular-shaped plane four corners part planar portions 261a, 262a,
263a, 264a, in these planes 261a, 262a, the part between 263a, 264a, form with positioned at different from rectangular-shaped plane
Position retreat to the three-dimensional portion 261b of state of position of the generation for being helpless to plasma of top, 262b, 263b,
264b.As shown in figure 11, Part II 213b is also constituted and is rolled up four antenna lines 271,272,273,274 with staggering 90 ° respectively
Around quadruple antenna, formed the central part 271a on four sides of above-mentioned rectangular-shaped plane in the face of dielectric walls 2,272a, 273a,
274a, forms with positioned at the position different from rectangular-shaped plane in these planar portions 271a, 272a, the part between 273a, 274a
Put three-dimensional portion 271b, 272b, 273b, 274b of the state of the position of the generation for being helpless to plasma for retreating to top.
By such structure, can be formed and wind four antenna lines to certain orientation with above-mentioned embodiment identical
The easy multiple antenna of comparison structure, and realize the independent plasma distribution control of corner and central part.
In addition, generating the plasma of local corresponding with corner and local corresponding with side central part in the different time
Plasma, formed it is desired process distribution.
In the example above, by many antenna coils of wire, the multiple antenna obtained from constitutes each antenna, but also may be used
Being as shown in figure 12 an antenna line 181 to be wound into antenna obtained from curl.
Additionally, the present invention is not limited to above-mentioned embodiment, various modifications can be carried out.For example, in above-mentioned embodiment
In, exemplified with for the multiple antennas for forming induction field concentric example will be set to, but not limited to this, it is also possible to such as
Shown in Figure 13, the structure of multiple vortex aerials 413 is for example, set side by side with.In this case, generated by staggering time
With the plasma of the corresponding local of each antenna 413, desired process can be formed and be distributed.
In addition, in the above-described embodiment, illustration has the generation sensing coupling in the case where plasma is difficult to the condition of high voltage for spreading
Be suitable for the example of the present invention when closing plasma, but not limited to this, as long as different from plan-position in different time generations
The plasma of local that should generate of multiple antenna pairs, obtain at the end of process it is desired process distribution, do not limit
In the condition of high voltage that plasma is difficult to spread.
Further, in the above-described embodiment, illustrate have flow relatively large electric current in the antenna of regulation and with this
The corresponding position of antenna generates the example of the plasma of local, but the antenna of less electric current can also be given birth in mobile phase
Into plasma more weaker than the plasma of local.
Further, the form of each antenna is not necessarily identical.For example, can be multiple day as shown in Figure 2 with a part of antenna
Line, other be multiple antenna as shown in Fig. 9～11, it is also possible to be mixed multiple antenna and become spiral shell by antenna is linear
Antenna obtained from rotation shape.
Further, in the above-described embodiment, the current value of each antenna is adjusted to adjust impedance using there is variable capacitance
Device, but it is also possible to using other impedance adjustment components such as variable coil.In addition, in the above-described embodiment, with high from one
Frequency power is illustrated to centered on the example of each antenna assignment supply high frequency electric power, but can also be as mentioned above at each
Antenna arranges high frequency electric source.
Further, in the above-described embodiment, to top, the antenna configurations of process chamber are constituted using dielectric walls in as process
The structure of the upper surface of the dielectric walls at the top outside room is illustrated, but, as long as day can be separated with dielectric walls
Between line and plasma generating area can, or antenna configurations in processing indoor construction.
Further, in the above-described embodiment, illustrating has the situation for processing the present invention suitable for etch processes or ashing,
But can also be applied to other plasma processing apparatus such as CVD film forming.Further, illustrate to have and used FPD as substrate
The example of rectangular substrate, but can also be applied to situation about being processed other rectangular substrates such as solar cell,
The circular substrate for being not limited to rectangle such as semiconductor wafer etc. can be applied to.
Claims (13)
1. a kind of inductively coupled plasma processing method, it is that substrate is carried out using inductive couple plasma processing device
The inductively coupled plasma processing method of inductively coupled plasma process, the method is characterized in that：
The inductive couple plasma processing device possesses：
Receive substrate and implement the process chamber of corona treatment to it；
The mounting table of substrate is loaded in the process chamber；
To the treating-gas supply system for processing indoor supply processing gas；
The gas extraction system that the process chamber is exhausted；
Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc.
The high frequency antenna of gas ions；With
High frequency power supply component to the high frequency antenna supply high frequency electric power,
The high frequency antenna at least has：It is supplied to RF power and forms outside induction field and be formed as spiral helicine outside
Antenna；It is arranging with the inner concentric shape in the outboard antenna, be supplied to RF power and form inner side induction field
Be formed as spiral helicine inboard antennas,
The high frequency power supply component has high frequency electric source and adapter,
The antenna element, with the power supply from the matched device of the high frequency electric source to the inboard antennas and the outboard antenna
Path, is formed with the inboard antennas circuit and outboard antenna circuit including each antenna and each supply path, also has
Impedance adjustment component, the impedance adjustment component is at least one of the inboard antennas circuit and the outboard antenna circuit
Impedance is adjusted, so as to adjust the current value of each antenna,
The inductively coupled plasma processing method, is carried out using the impedance adjustment component to the current value of each antenna
Adjustment, periodically implements the first process and second processing so that the moment terminated in process obtains to substrate in the different time
Distribution is processed to desired, wherein, first is processed as the electricity that flows respectively in the inboard antennas and the outboard antenna
In the comparison of stream, the electric current of the relatively large current value that makes to be flowed in the inboard antennas, using with the inboard antennas
The inner side induction field that corresponding part is formed generates the plasma of local, is processed, and second processing is described
In the comparison of the electric current flowed respectively in inboard antennas and the outboard antenna, make to be flowed in the outboard antenna relatively large
Current value electric current, generate local using the outside induction field formed in part corresponding with the outboard antenna
Plasma is processed.
2. inductively coupled plasma processing method as claimed in claim 1, it is characterised in that：
Described first current value for processing the internal current by making to be flowed in the inboard antennas is as relative larger value
For generating the first current value of the plasma of the local, in the current value of outer current of outboard antenna flowing being
Carry out as the second current value of relative small value,
The second processing is as relative larger value by the current value for making the outer current in outboard antenna flowing
For generating the 3rd current value of the plasma of the local, in the current value of internal current of inboard antennas flowing being
Carry out as the 4th current value of relative small value.
3. a kind of inductively coupled plasma processing method, it is that substrate is carried out using inductive couple plasma processing device
The inductively coupled plasma processing method of inductively coupled plasma process, the method is characterized in that：
The inductive couple plasma processing device possesses：
Receive substrate and implement the process chamber of corona treatment to it；
The mounting table of substrate is loaded in the process chamber；
To the treating-gas supply system for processing indoor supply processing gas；
The gas extraction system that the process chamber is exhausted；
Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc.
The high frequency antenna of gas ions；With
High frequency power supply component to the high frequency antenna supply high frequency electric power,
The high frequency antenna at least has：It is supplied to RF power and forms outside induction field and be formed as spiral helicine outside
Antenna；It is arranging with the inner concentric shape in the outboard antenna, be supplied to RF power and form inner side induction field
Be formed as spiral helicine inboard antennas,
The inductively coupled plasma processing method, in the different time the first process and second processing are periodically implemented,
So that the moment terminated in process obtains desired process to substrate and is distributed, wherein, first is processed as in the inboard antennas
The electric current of the relatively large current value of middle flowing, using the inner side sensing formed in part corresponding with the inboard antennas
Electric field generates the plasma of local, is processed, and second processing is the relatively large electric current that flows in the outboard antenna
The electric current of value, using the outside induction field formed in part corresponding with the outboard antenna plasma of local is generated
Body is processed,
Process and during second processing implementing first, make current value to the internal current of inboard antennas supply and to described
The current value of the outer current of outboard antenna supply can be independently varied, and make the current value of the internal current for generating
Week between first current value of the plasma of the local and the 4th current value less than first current value to specify
Phase changes, and makes the current value of the outer current in the 3rd current value of the plasma for being used to generate the local and than described
Become with the cycle of the regulation and with the phase place different from the internal current between the second little current value of 3rd current value
Change.
4. inductively coupled plasma processing method as claimed in claim 3, it is characterised in that：
Phase contrast between the internal current and the outer current is the half period.
5. the inductively coupled plasma processing method as described in claim 3 or 4, it is characterised in that：
The internal current and the outer current are supplied with pulse type.
6. the inductively coupled plasma processing method as any one of claim 2～4, it is characterised in that：
Second current value and the 4th current value is respectively the outboard antenna and the inboard antennas are not produced
The value of the degree of inductively coupled plasma or 0.
7. the inductively coupled plasma processing method as any one of Claims 1 to 4, it is characterised in that：
Carried out according to the content for processing and the process to be obtained distribution during described first is processed and during the second processing
Appropriate setting.
8. inductively coupled plasma processing method as claimed in claim 7, it is characterised in that：
The required time is identical with the time required during the second processing during first process.
9. the inductively coupled plasma processing method as any one of Claims 1 to 4, it is characterised in that：
Described first process in current value and the second processing for generating the plasma of local in for generating
The current value of the plasma of local, is appropriately configured according to the content for processing and the process to be obtained distribution.
10. inductively coupled plasma processing method as claimed in claim 9, it is characterised in that：
Described first process in current value and the second processing for generating the plasma of local in for generating
The current value of the plasma of local is identical.
A kind of 11. inductively coupled plasma processing methods, it is that substrate is entered using inductive couple plasma processing device
The inductively coupled plasma processing method of row inductively coupled plasma process, the method is characterized in that：
The inductive couple plasma processing device possesses：
Receive substrate and implement the process chamber of corona treatment to it；
The mounting table of substrate is loaded in the process chamber；
To the treating-gas supply system for processing indoor supply processing gas；
The gas extraction system that interior is exhausted is processed to described；
Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc.
The high frequency antenna of gas ions；With
High frequency power supply component to the high frequency antenna supply high frequency electric power,
The high frequency antenna have be supplied to RF power and form the spiral helicine multiple antennas that are formed as of induction field,
The high frequency power supply component has high frequency electric source and adapter,
The antenna element, with the supply path from the matched device of the high frequency electric source to the plurality of antenna, is formed with bag
Multiple antenna circuits of each antenna and each supply path are included, also with impedance adjustment component, the impedance adjustment component
Impedance at least one of the plurality of antenna circuit is adjusted, so as to adjust the current value of each antenna,
The current value of each antenna is adjusted using the impedance adjustment component, it is many in different time to different antennas
Second periodicity ground enforcement is processed so that the moment terminated in process obtains desired process to substrate and is distributed, and the process makes
Flow the electric current of relatively large current value at least one antenna of the part as the plurality of antenna, using with
The induction field that the corresponding part of the antenna is formed generates the plasma of local.
12. a kind of inductive couple plasma processing devices, it is characterised in that possess：
Receive substrate and implement the process chamber of corona treatment to it；
The mounting table of substrate is loaded in the process chamber；
To the treating-gas supply system for processing indoor supply processing gas；
The gas extraction system that interior is exhausted is processed to described；
Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc.
The high frequency antenna of gas ions；With
High frequency power supply component to the high frequency antenna supply high frequency electric power,
The high frequency antenna at least has：It is supplied to RF power and forms outside induction field and be formed as spiral helicine outside
Antenna；It is arranging with the inner concentric shape in the outboard antenna, be supplied to RF power and form inner side induction field
Be formed as spiral helicine inboard antennas,
The high frequency power supply component has high frequency electric source and adapter,
The antenna element, with the power supply from the matched device of the high frequency electric source to the inboard antennas and the outboard antenna
Path, is formed with the inboard antennas circuit and outboard antenna circuit including each antenna and each supply path, also has
Impedance adjustment component, the impedance adjustment component is at least one of the inboard antennas circuit and the outboard antenna circuit
Impedance is adjusted, so as to adjust the current value of each antenna,
Control unit is also equipped with, it is controlled as follows：The current value of each antenna is carried out using the impedance adjustment component
Adjustment, periodically implements the first process and second processing so that the moment terminated in process obtains to substrate in the different time
Distribution is processed to desired, wherein, first is processed as the electricity that flows respectively in the inboard antennas and the outboard antenna
In the comparison of stream, the electric current of the relatively large current value that makes to be flowed in the inboard antennas, using with the inboard antennas
The inner side induction field that corresponding part is formed generates the plasma of local and is processed, and second processing is described interior
In the comparison of the electric current flowed respectively in side antenna and the outboard antenna, make to be flowed in the outboard antenna relatively large
The electric current of current value, the outside induction field generation local that utilization is formed in part corresponding with the outboard antenna etc.
Gas ions are processed.
13. a kind of inductive couple plasma processing devices, it is characterised in that possess：
Receive substrate and implement the process chamber of corona treatment to it；
The mounting table of substrate is loaded in the process chamber；
To the treating-gas supply system for processing indoor supply processing gas；
The gas extraction system that interior is exhausted is processed to described；
Antenna element, its have it is described process it is indoor with substrate accordingly plane earth configuration, for generating inductively etc.
The high frequency antenna of gas ions；With
High frequency power supply component to the high frequency antenna supply high frequency electric power,
The high frequency antenna have be supplied to RF power and form the spiral helicine multiple antennas that are formed as of induction field,
The high frequency power supply component has high frequency electric source and adapter,
The antenna element, with the supply path from the matched device of the high frequency electric source to the plurality of antenna, is formed with bag
Multiple antenna circuits of each antenna and each supply path are included, also with impedance adjustment component, the impedance adjustment component
Impedance at least one of the plurality of antenna circuit is adjusted, so as to adjust the current value of each antenna,
Control unit is also equipped with, it is controlled as follows：The current value of each antenna is carried out using the impedance adjustment component
Adjustment, is repeatedly periodically carried out processing so that the moment terminated in process obtains substrate to different antennas in different time
Distribution is processed to desired, the process makes the mobile phase at least one antenna of the part as the plurality of antenna
Electric current to larger current value, using part corresponding with the antenna formed the induction field generate local grade from
Daughter.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012024311A JP5878771B2 (en) | 2012-02-07 | 2012-02-07 | Inductively coupled plasma processing method and inductively coupled plasma processing apparatus |
| JP2012-024311 | 2012-02-07 |
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| Publication Number | Publication Date |
|---|---|
| CN103247510A CN103247510A (en) | 2013-08-14 |
| CN103247510B true CN103247510B (en) | 2017-04-12 |
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| JP6240441B2 (en) * | 2013-09-06 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| CN103476196B (en) * | 2013-09-23 | 2016-02-03 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and method of plasma processing |
| KR101664839B1 (en) * | 2015-05-29 | 2016-10-11 | 세메스 주식회사 | Apparatus and method for treating substrate |
| JP7221115B2 (en) * | 2019-04-03 | 2023-02-13 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JP2021077451A (en) * | 2019-11-05 | 2021-05-20 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
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| CN101076220A (en) * | 2006-05-18 | 2007-11-21 | 东京毅力科创株式会社 | Inductance coupling plasma processing device and plasma processing method |
| CN101440484A (en) * | 2007-11-21 | 2009-05-27 | 东京毅力科创株式会社 | Induction coupling plasma processing apparatus and method |
| CN101583234A (en) * | 2008-05-14 | 2009-11-18 | 东京毅力科创株式会社 | Inductive couple plasma processing device |
| CN101730375A (en) * | 2008-10-27 | 2010-06-09 | 东京毅力科创株式会社 | Inductively coupled plasma processing device and plasma processing method |
| CN101877312A (en) * | 2009-04-28 | 2010-11-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
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| US6164241A (en) * | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
| KR100338057B1 (en) * | 1999-08-26 | 2002-05-24 | 황 철 주 | Antenna device for generating inductively coupled plasma |
| KR100964398B1 (en) * | 2003-01-03 | 2010-06-17 | 삼성전자주식회사 | Inductively coupled antenna and plasma processing apparatus using the same |
| US20110094994A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Inductively coupled plasma apparatus |
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| CN101076220A (en) * | 2006-05-18 | 2007-11-21 | 东京毅力科创株式会社 | Inductance coupling plasma processing device and plasma processing method |
| CN101440484A (en) * | 2007-11-21 | 2009-05-27 | 东京毅力科创株式会社 | Induction coupling plasma processing apparatus and method |
| CN101583234A (en) * | 2008-05-14 | 2009-11-18 | 东京毅力科创株式会社 | Inductive couple plasma processing device |
| CN101730375A (en) * | 2008-10-27 | 2010-06-09 | 东京毅力科创株式会社 | Inductively coupled plasma processing device and plasma processing method |
| CN101877312A (en) * | 2009-04-28 | 2010-11-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
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| KR101754439B1 (en) | 2017-07-06 |
| JP5878771B2 (en) | 2016-03-08 |
| KR20130091271A (en) | 2013-08-16 |
| CN103247510A (en) | 2013-08-14 |
| TWI581672B (en) | 2017-05-01 |
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