CN103246309A - 基准电压产生装置 - Google Patents
基准电压产生装置 Download PDFInfo
- Publication number
- CN103246309A CN103246309A CN2013100508457A CN201310050845A CN103246309A CN 103246309 A CN103246309 A CN 103246309A CN 2013100508457 A CN2013100508457 A CN 2013100508457A CN 201310050845 A CN201310050845 A CN 201310050845A CN 103246309 A CN103246309 A CN 103246309A
- Authority
- CN
- China
- Prior art keywords
- type
- reference voltage
- mos transistor
- voltage generator
- channel doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052785 arsenic Inorganic materials 0.000 claims description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 230000003014 reinforcing effect Effects 0.000 claims description 7
- 230000001939 inductive effect Effects 0.000 claims description 4
- 230000037230 mobility Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/02—Input arrangements using manually operated switches, e.g. using keyboards or dials
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-028733 | 2012-02-13 | ||
JP2012028733A JP5959220B2 (ja) | 2012-02-13 | 2012-02-13 | 基準電圧発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103246309A true CN103246309A (zh) | 2013-08-14 |
CN103246309B CN103246309B (zh) | 2017-07-18 |
Family
ID=48925883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310050845.7A Expired - Fee Related CN103246309B (zh) | 2012-02-13 | 2013-02-08 | 基准电压产生装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9213415B2 (zh) |
JP (1) | JP5959220B2 (zh) |
KR (1) | KR102030982B1 (zh) |
CN (1) | CN103246309B (zh) |
TW (1) | TWI550771B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104007778A (zh) * | 2013-02-22 | 2014-08-27 | 精工电子有限公司 | 基准电压产生电路 |
CN104035472A (zh) * | 2014-06-24 | 2014-09-10 | 吴江圣博瑞信息科技有限公司 | 一种全cmos参考电压源产生电路 |
CN104571251A (zh) * | 2013-10-28 | 2015-04-29 | 精工电子有限公司 | 基准电压产生装置 |
CN105929886A (zh) * | 2015-02-26 | 2016-09-07 | 精工半导体有限公司 | 基准电压电路以及电子设备 |
CN107153441A (zh) * | 2017-07-10 | 2017-09-12 | 长沙方星腾电子科技有限公司 | 一种基准电压生成电路 |
CN110119178A (zh) * | 2018-02-06 | 2019-08-13 | 艾普凌科有限公司 | 基准电压产生装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013125163A1 (ja) * | 2012-02-24 | 2013-08-29 | パナソニック株式会社 | 基準電圧源回路 |
US20150200270A1 (en) * | 2014-01-16 | 2015-07-16 | Globalfoundries Inc. | Field effect transistors for high-performance and low-power applications |
TWI595542B (zh) * | 2016-12-08 | 2017-08-11 | 旺宏電子股份有限公司 | 半導體結構 |
JP6805049B2 (ja) * | 2017-03-31 | 2020-12-23 | エイブリック株式会社 | 基準電圧発生装置 |
TWI634661B (zh) * | 2017-07-31 | 2018-09-01 | 旺宏電子股份有限公司 | 半導體結構 |
CN107678480A (zh) * | 2017-11-13 | 2018-02-09 | 常州欣盛微结构电子有限公司 | 一种用于低功耗数字电路的线性电压管理器 |
US10782723B1 (en) | 2019-11-01 | 2020-09-22 | Analog Devices International Unlimited Company | Reference generator using fet devices with different gate work functions |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4446383A (en) * | 1982-10-29 | 1984-05-01 | International Business Machines | Reference voltage generating circuit |
JP2002110917A (ja) * | 2000-09-27 | 2002-04-12 | Ricoh Co Ltd | 基準電圧発生回路及びその出力値調整方法並びに電源装置 |
US20020113642A1 (en) * | 2000-10-30 | 2002-08-22 | Masuhide Ikeda | Reference voltage circuit |
US20020163385A1 (en) * | 2000-10-13 | 2002-11-07 | Seiko Epson Corporation | Operation amplification circuit, constant voltage circuit and reference voltage circuit |
US20070057291A1 (en) * | 2005-08-31 | 2007-03-15 | Hideyuki Aota | Reference voltage generation circuit, and constant voltage circuit using the reference voltage generation circuit |
CN101331437A (zh) * | 2006-03-31 | 2008-12-24 | 株式会社理光 | 基准电压产生电路及使用其的供电设备 |
CN101673743A (zh) * | 2008-09-10 | 2010-03-17 | 精工电子有限公司 | 半导体器件 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59200320A (ja) | 1983-04-27 | 1984-11-13 | Hitachi Ltd | 基準電圧発生回路 |
JP2007294846A (ja) * | 2006-03-31 | 2007-11-08 | Ricoh Co Ltd | 基準電圧発生回路及びそれを用いた電源装置 |
JP2010108419A (ja) | 2008-10-31 | 2010-05-13 | Toshiba Corp | 基準電圧発生回路およびそれを用いたレギュレータ |
-
2012
- 2012-02-13 JP JP2012028733A patent/JP5959220B2/ja not_active Expired - Fee Related
-
2013
- 2013-01-16 TW TW102101631A patent/TWI550771B/zh not_active IP Right Cessation
- 2013-01-31 US US13/755,545 patent/US9213415B2/en not_active Expired - Fee Related
- 2013-02-05 KR KR1020130012954A patent/KR102030982B1/ko active IP Right Grant
- 2013-02-08 CN CN201310050845.7A patent/CN103246309B/zh not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4446383A (en) * | 1982-10-29 | 1984-05-01 | International Business Machines | Reference voltage generating circuit |
JP2002110917A (ja) * | 2000-09-27 | 2002-04-12 | Ricoh Co Ltd | 基準電圧発生回路及びその出力値調整方法並びに電源装置 |
US20020060600A1 (en) * | 2000-09-27 | 2002-05-23 | Naohiro Ueda | Reference voltage generation circuit having reduced temperature sensitivity, an output adjusting method, and an electrical power source |
US20020163385A1 (en) * | 2000-10-13 | 2002-11-07 | Seiko Epson Corporation | Operation amplification circuit, constant voltage circuit and reference voltage circuit |
US20020113642A1 (en) * | 2000-10-30 | 2002-08-22 | Masuhide Ikeda | Reference voltage circuit |
US6628161B2 (en) * | 2000-10-30 | 2003-09-30 | Seiko Epson Corporation | Reference voltage circuit |
US20070057291A1 (en) * | 2005-08-31 | 2007-03-15 | Hideyuki Aota | Reference voltage generation circuit, and constant voltage circuit using the reference voltage generation circuit |
CN101331437A (zh) * | 2006-03-31 | 2008-12-24 | 株式会社理光 | 基准电压产生电路及使用其的供电设备 |
CN101673743A (zh) * | 2008-09-10 | 2010-03-17 | 精工电子有限公司 | 半导体器件 |
Non-Patent Citations (2)
Title |
---|
叶以正,来逢昌: "《集成电路工程基础》", 31 May 2011, 清华大学出版社 * |
王占国,陈立泉,屠海令: "《信息功能材料手册 上》", 30 June 2009, 化学工业出版社 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104007778A (zh) * | 2013-02-22 | 2014-08-27 | 精工电子有限公司 | 基准电压产生电路 |
CN104007778B (zh) * | 2013-02-22 | 2017-03-01 | 精工半导体有限公司 | 基准电压产生电路 |
CN104571251A (zh) * | 2013-10-28 | 2015-04-29 | 精工电子有限公司 | 基准电压产生装置 |
CN104571251B (zh) * | 2013-10-28 | 2017-10-20 | 精工半导体有限公司 | 基准电压产生装置 |
CN104035472A (zh) * | 2014-06-24 | 2014-09-10 | 吴江圣博瑞信息科技有限公司 | 一种全cmos参考电压源产生电路 |
CN105929886A (zh) * | 2015-02-26 | 2016-09-07 | 精工半导体有限公司 | 基准电压电路以及电子设备 |
CN105929886B (zh) * | 2015-02-26 | 2018-10-16 | 艾普凌科有限公司 | 基准电压电路以及电子设备 |
CN107153441A (zh) * | 2017-07-10 | 2017-09-12 | 长沙方星腾电子科技有限公司 | 一种基准电压生成电路 |
CN110119178A (zh) * | 2018-02-06 | 2019-08-13 | 艾普凌科有限公司 | 基准电压产生装置 |
Also Published As
Publication number | Publication date |
---|---|
US9213415B2 (en) | 2015-12-15 |
CN103246309B (zh) | 2017-07-18 |
JP5959220B2 (ja) | 2016-08-02 |
KR20130093023A (ko) | 2013-08-21 |
JP2013164808A (ja) | 2013-08-22 |
TW201344847A (zh) | 2013-11-01 |
TWI550771B (zh) | 2016-09-21 |
US20130207636A1 (en) | 2013-08-15 |
KR102030982B1 (ko) | 2019-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160406 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Applicant before: Seiko Instruments Inc. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170718 |