CN103236646A - Volume Bragg grating mode-locked laser - Google Patents

Volume Bragg grating mode-locked laser Download PDF

Info

Publication number
CN103236646A
CN103236646A CN2013101805925A CN201310180592A CN103236646A CN 103236646 A CN103236646 A CN 103236646A CN 2013101805925 A CN2013101805925 A CN 2013101805925A CN 201310180592 A CN201310180592 A CN 201310180592A CN 103236646 A CN103236646 A CN 103236646A
Authority
CN
China
Prior art keywords
bragg grating
laser
body bragg
mode
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013101805925A
Other languages
Chinese (zh)
Inventor
张克勤
殷海玮
许春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou University
Original Assignee
Suzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou University filed Critical Suzhou University
Priority to CN2013101805925A priority Critical patent/CN103236646A/en
Publication of CN103236646A publication Critical patent/CN103236646A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses a volume Bragg grating mode-locked laser, which comprises a semiconductor laser serving as a light source to generate a board-band laser beam, and is characterized by also comprising an external resonant cavity, wherein the external resonant cavity comprises a volume Bragg grating, and the volume Bragg grating is coupled with an output laser beam of the semiconductor laser, controls the spectral line width and the divergence angle of the laser beam, selects and controls a transverse mode and a longitudinal mode of the laser beam and is fixedly arranged on a substrate of the semiconductor laser. The volume Bragg grating mode-locked laser has the advantages that the volume Bragg grating is directly and fixedly arranged on the substrate of the semiconductor laser, so that the external resonant cavity can be as small as possible, the integral structure is compact and the mechanical stability is improved.

Description

A kind of body Bragg grating mode-locked laser
Technical field
The present invention relates to a kind of laser, especially a kind of body Bragg grating mode-locked laser.
Background technology
The Raman spectrum detection technique is to use laser to obtain the spectral information of material molecule aspect, by the composition of database comparative analysis test substance and the technology of concentration, has powerful ability at harmless Physical Property Analysis and discriminating.Raman spectrum detects the fields such as food security, drug inspection, drugs detecting, judicial expertise, gemstone testing and environment measuring that have been widely used in.Along with the development of practical application request, the Portable Raman optical spectrum detection technique is more and more paid attention to for people in recent years.Portable Raman spectrum detection technique be exactly with Raman technology from laboratory applications push to hand, the technology of portable application.It need not sample preparation, need not isolated area to be checked and clean room, and the material evaluation is carried out at the scene of wanting of what is the need in office that can be easy and convenient in real time.Yet owing to lack compact conformation, mechanically stable is good, and the light source of the laser of high spectral luminance laser as Raman detector can be provided, and makes that the development of Portable Raman optical spectrum detection technique is hindered.
The ordinary semiconductor laser is owing to exist a large amount of zlasing modes in Fabry-Perot (F-P) laser resonator, and breadth of spectrum line surpasses several nanometers, and this will reduce the resolution that Raman spectrum detects greatly; Though and general single-mode laser breadth of spectrum line is less than 1 nanometer, its power output is lower than 200 milliwatts, and the laser of this power is not enough to excite enough strong raman spectral signal usually, is not suitable as the LASER Light Source of portable Raman detector.
Summary of the invention
The present invention seeks to: a kind of not only narrow bandwidth is provided, high power, compact conformation and good mechanical stability, and can improve the body Bragg grating mode-locked laser of spectral luminance.
Technical scheme of the present invention is: a kind of body Bragg grating mode-locked laser comprises
The semiconductor laser is as the light source that produces the broad band laser bundle;
It is characterized in that, also comprise an external resonant cavity, described external resonant cavity comprises the one Bragg grating, this body Bragg grating be coupled described semiconductor laser outgoing laser beam and control the laser beam breadth of spectrum line and dispersion angle and laser beam transverse mode longitudinal mode chosen and control, described body Bragg grating is fixed on the substrate of described semiconductor laser.
Preferably, described external resonant cavity also is provided with collimation lens, and described collimating lens is between described semiconductor laser and described body Bragg grating.
Preferably, described body Bragg grating is a kind of transmission-type body Bragg grating or a kind of reflective body Bragg grating.
Preferably, described body Bragg grating is to sell off the body Bragg grating that glass is made by photo-thermal, sell off the structure that the certain refractive index cycle of formation changes in the glass at this photo-thermal, the body Bragg grating that adopts this photo-thermal to sell off glass can reach and surpass 95% transmission or the diffraction efficiency of reflective-mode, the outgoing laser beam bandwidth can reach 0.1 nanometer even littler, be used for realizing the output of laser of narrowband bundle, the wavelength of laser beam is determined by cycle of grating and the grating inclination angle with respect to incident light.
Advantage of the present invention is:
1. the body Bragg grating directly is fixed on the substrate of described semiconductor laser, can makes described external resonant cavity as much as possible little like this, make whole compact conformation, and improve mechanical stability of the present invention.
. body Bragg grating mode-locked laser of the present invention can be used as for output narrow bandwidth, high-power LASER Light Source.
. this body Bragg grating is conducive to reduce the angle of divergence of laser beam, thereby improves the spatial brightness of laser beam.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is the structural representation of transmission-type body Bragg grating mode-locked laser of the present invention;
Fig. 2 is the structural representation of the reflective body Bragg grating of the present invention mode-locked laser;
Wherein: 1 semiconductor laser, 2 external resonant cavities, 2-1 collimating lens, 2-2 transmission-type body Bragg grating, the reflective body Bragg grating of 2-3,2-4 speculum.
Embodiment
Embodiment 1: with reference to shown in Figure 1, a kind of transmission-type body Bragg grating mode-locked laser, comprise a broadband semiconductor laser 1 as LASER Light Source, its outgoing laser beam process is by collimating lens 2-1, the external resonant cavity 2 that transmission-type body Bragg grating 2-2 and speculum 2-4 constitute obtains the stable outgoing laser beam of narrow bandwidth.
This transmission-type body Bragg grating 2-2 can carry out spectrum narrowing and angle Selection to incident laser, selected certain narrow linewidth pattern will be gone out from elementary beam in deflection, and diffraction will not take place in the laser beam of other all patterns, directly pass grating, the laser beam of diffraction does not take place as the main output of external resonant cavity.Collimating lens 2-1 provides the noise spectra of semiconductor lasers coupling that 1 output laser is dispersed naturally and the angular selectivity of transmission-type body Bragg grating 2-2.The transmission-type body Bragg grating 2-2 that adopts among this embodiment has for necessary wavelength and surpasses 95% transmission mode diffraction efficiency, its diffraction direction as shown in Figure 1, speculum 2-4 is with diffraction light reflected back transmission-type body Bragg grating 2-2, and returned in the gain media of semiconductor laser 1 resonant cavity by further diffraction, excited amplification again.Determined by the bandwidth of the breadth of spectrum line of the laser of twice diffraction by transmission-type body Bragg grating 2-2, and its wavelength is by cycle and the inclination angle decision of grating.By the locked mode effect of transmission-type body Bragg grating 2-2, finally can obtain breadth of spectrum line less than the outgoing laser beam of 0.1 nanometer like this.
Embodiment 2, with reference to shown in Figure 2, a kind of reflective body Bragg grating mode-locked laser, comprise a broadband semiconductor laser 1 as excitation source, its outgoing laser beam process is by collimating lens 2-1, the external resonant cavity 2 that reflective body Bragg grating 2-3 constitutes obtains the stable shoot laser of narrow bandwidth.
Reflective body Bragg grating 2-3 can be with the laser reflection feedback of a certain pattern, and along the opposite light path return laser light source of former incident beam, and the laser of other all patterns will be through grating.The reflective body Bragg grating 2-3 that adopts has for necessary wavelength and surpasses 95% reflective-mode diffraction efficiency, and its reflection direction as shown in Figure 2.Collimating lens 2-1 eliminates the high-order scattering light of lasing light emitter outgoing orthogonal direction.The angular selectivity of this reflective body Bragg grating 2-3 is matched with the transverse mode of collimating lens 2-1, and by the feasible light beam return laser light gain media that reflects feedback of suitable adjustment, final this laser beam obtains breadth of spectrum line less than the shoot laser of 0.1 nanometer thus as the main output of external resonant cavity 2.
Adopt transmission-type or reflective body Bragg grating to have following some advantage as the laser of external resonant cavity 2.Because the body Bragg grating is non-dispersivity, incoming laser beam can incide on the body Bragg grating with very little size collimation, still keeps higher diffraction efficiency of grating simultaneously.Therefore the length of the external resonant cavity of laser can shorten greatly, increases the stability of laser, and the laser overall volume is dwindled, and is applicable to portable instrument.The body Bragg grating also helps the angle of divergence that reduces laser beam, thereby improves the spatial brightness of laser beam.
The above only is the embodiment of invention.Protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses, and the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range that claim was defined.

Claims (4)

1. a body Bragg grating mode-locked laser comprises
Semiconductor laser (1) is as the light source that produces the broad band laser bundle;
It is characterized in that, also comprise an external resonant cavity (2), described external resonant cavity (2) comprises the one Bragg grating, this body Bragg grating be coupled described semiconductor laser (1) outgoing laser beam and control the laser beam breadth of spectrum line and dispersion angle and laser beam transverse mode longitudinal mode chosen and control, described body Bragg grating is fixed on the substrate of described semiconductor laser (1).
2. body Bragg grating mode-locked laser according to claim 1, it is characterized in that, described external resonant cavity (2) also is provided with collimation lens (2-1), and described collimating lens (2-1) is positioned between described semiconductor laser (1) and the described body Bragg grating.
3. body Bragg grating mode-locked laser according to claim 1 is characterized in that, described body Bragg grating is a kind of transmission-type body Bragg grating (2-2) or a kind of reflective body Bragg grating (2-3).
4. body Bragg grating mode-locked laser according to claim 1 is characterized in that, described body Bragg grating is to sell off the body Bragg grating that glass is made by photo-thermal.
CN2013101805925A 2013-05-15 2013-05-15 Volume Bragg grating mode-locked laser Pending CN103236646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013101805925A CN103236646A (en) 2013-05-15 2013-05-15 Volume Bragg grating mode-locked laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013101805925A CN103236646A (en) 2013-05-15 2013-05-15 Volume Bragg grating mode-locked laser

Publications (1)

Publication Number Publication Date
CN103236646A true CN103236646A (en) 2013-08-07

Family

ID=48884671

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013101805925A Pending CN103236646A (en) 2013-05-15 2013-05-15 Volume Bragg grating mode-locked laser

Country Status (1)

Country Link
CN (1) CN103236646A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104934855A (en) * 2015-06-24 2015-09-23 中国科学院半导体研究所 Laser light source used for laser display
CN113791416A (en) * 2021-09-10 2021-12-14 苏州长光华芯光电技术股份有限公司 Laser radar system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050018743A1 (en) * 2003-07-03 2005-01-27 Volodin Boris Leonidovich Use of volume Bragg gratings for the conditioning of laser emission characteristics
CN101614879A (en) * 2009-07-24 2009-12-30 北京工业大学 Narrow-band optical filter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050018743A1 (en) * 2003-07-03 2005-01-27 Volodin Boris Leonidovich Use of volume Bragg gratings for the conditioning of laser emission characteristics
CN101614879A (en) * 2009-07-24 2009-12-30 北京工业大学 Narrow-band optical filter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GEORGE B. VENUS,ET AL: "High-brightness narrow-line laser diode source with volume Bragg-grating feedback", 《PROC.OF SPIE》, vol. 5711, 17 March 2005 (2005-03-17), XP002561184, DOI: doi:10.1117/12.590425 *
何艳艳,徐业彬: "光热折变玻璃的研究进展", 《应用激光》, vol. 33, no. 1, 28 February 2013 (2013-02-28), pages 85 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104934855A (en) * 2015-06-24 2015-09-23 中国科学院半导体研究所 Laser light source used for laser display
CN104934855B (en) * 2015-06-24 2018-03-23 中国科学院半导体研究所 LASER Light Source for laser display
CN113791416A (en) * 2021-09-10 2021-12-14 苏州长光华芯光电技术股份有限公司 Laser radar system
CN113791416B (en) * 2021-09-10 2023-12-05 苏州长光华芯光电技术股份有限公司 Laser radar system

Similar Documents

Publication Publication Date Title
CN101194402B (en) Compact multimode laser with rapid wavelength scanning
Baillard et al. Interference-filter-stabilized external-cavity diode lasers
JP5898077B2 (en) Filter ASE sweep source for OCT medical imaging
US7545493B2 (en) Raman spectroscopic apparatus utilizing internal grating stabilized semiconductor laser with high spectral brightness
CN101968381A (en) Raman spectroscopic apparatus and method for measuring raman spectrum containing fluorescent materials
JP2008529068A5 (en)
US8736835B2 (en) Dual-gas microcavity Raman sensor and method of use
CN102377107A (en) High-stability light source system and method of manufacturing
CN104737390A (en) Device for emitting super-continuous wide-band light and uses thereof
WO2006091274A1 (en) Reducing spectral noise in semiconductor spectroscopy system
JP2007533962A (en) Geodesic device with laser light source
US8599373B1 (en) Microcavity Raman sensor and method of use
US7154920B2 (en) Broad-band variable-wavelength laser beam generator
CN103236646A (en) Volume Bragg grating mode-locked laser
Zhang et al. Coherent Random Fiber Laser-Enabled Super-Resolution Spectroscopy
CN205565288U (en) Laser instrument for raman spectrum detection
US10389087B2 (en) Method and apparatus for spectral narrowing and wavelength stabilization of broad-area lasers
Hünkemeier et al. Spectral dynamics of multimode Nd3+-and Yb3+-doped fibre lasers with intracavity absorption
CN208045930U (en) A kind of optical fiber laser of length scanning
TWI728999B (en) Spatial chirped cavity for temporally stretching/compressing optical pulses
CN111564757A (en) Quantum cascade laser for frequency stabilization of intermediate infrared fiber bragg grating and implementation method thereof
CN108365509A (en) A kind of optical fiber laser of length scanning
WO2021098184A1 (en) Laser light deep compression method and laser
Ye et al. LDLS Powered High Throughput Tunable Light Source
Al-Basheer et al. Evolution of blue laser diode spectral lines with applied current in the range 446-448 nm

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130807