CN103236495A - Sn-Ge-Te (stannum-germanium-tellurium) film material for phase transition storages and preparation method of Sn-Ge-Te film material - Google Patents
Sn-Ge-Te (stannum-germanium-tellurium) film material for phase transition storages and preparation method of Sn-Ge-Te film material Download PDFInfo
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- CN103236495A CN103236495A CN2013101281987A CN201310128198A CN103236495A CN 103236495 A CN103236495 A CN 103236495A CN 2013101281987 A CN2013101281987 A CN 2013101281987A CN 201310128198 A CN201310128198 A CN 201310128198A CN 103236495 A CN103236495 A CN 103236495A
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Abstract
The invention discloses a Sn-Ge-Te (stannum-germanium-tellurium) film material for phase transition storages and a preparation method of the Sn-Ge-Te film material. The film material is a material formed by three elements including stannum, germanium and tellurium. The general formula of the film material is SnxGeyTez, wherein 0<X</=22, 37</=y</=53 and 39</=z</=42. Compared with conventional Ge2Sb2Te5 (GST) film materials, the Sn-Ge-Te film material has the advantages of high crystallization temperature, good heat stability, high data retentivity and high crystallization speed and the like.
Description
Technical field
The present invention relates to microelectronics technology, particularly relate to a kind of Sn-Ge-Te thin-film material for phase transition storage and preparation method thereof.
Background technology
Phase transition storage (PCM) is a kind of non-volatile semiconductor memory of rising in recent years.Compare with traditional memory, it has little, the high read or write speed of memory cell size, low-power consumption, has extended cycle life with the advantages such as anti-radiation performance of excellence.Based on above-mentioned advantage arranged, phase transition storage not only can replace existing memory, but also produces new application in more inaccessible fields of normal memory (such as fields such as space, space technology and military affairs).Phase transition storage is competitor strong in the novel memory technology, and being expected to substitute flash memory (Flash technology) becomes the main flow memory technology of nonvolatile memory of future generation, thereby has vast market prospect.
But the application of phase transition storage realizes the storage of " 0 " and " 1 " based on phase-change material wherein in the inverse conversion between the high resistance and low resistance under the electric impulse signal operation.
The core of phase transition storage is the phase change memory dielectric material, and traditional phase-change material mainly is Ge
2Sb
2Te
5, it has been widely used in phase change disc and the phase transition storage.But it is existing with Ge
2Sb
2Te
5Be the phase transition storage of phase-change material, still have some problems: 1) crystallization temperature is lower, is faced with dangerous of data loss; 2) thermal stability is bad, and the data confining force can not get guaranteeing that its working temperature that authentic data preservation in 10 years can be provided only is 80 degree, has seriously restricted its application.3) phase velocity remains further to be improved, there are some researches show based on the phase transition storage of GST and realize that the electric pulse of stablizing the RESET operation was at least for 500 nanoseconds, can't satisfy the rate request of dynamic random access memory, this needs us to explore the storage medium with faster phase velocity.Therefore seek a kind of high data confining force, the phase change film material that phase velocity is fast is current urgent problem.
Summary of the invention
The shortcoming of prior art the object of the present invention is to provide the Sn-Ge-Te thin-film material that is used for the phase transformation storage that a kind of data holding ability is strong, phase velocity fast and physical property is adjustable in view of the above.
Reach other relevant purposes for achieving the above object, the invention provides a kind of Sn-Ge-Te thin-film material for phase transition storage, its general formula is Sn
xGe
yTe
z, 0＜x≤22,37≤y≤53,39≤z≤42 wherein.
Wherein, preferred formula is Sn
15Ge
43Te
42
Preferably, described Sn-Ge-Te thin-film material adopts sputtering method, electron-beam vapor deposition method, chemical vapour deposition technique, reaches a kind of formation in the atomic layer deposition method.
The present invention also provides a kind of preparation method of Sn-Ge-Te thin-film material, and it adopts SnTe and GeTe alloys target cosputtering to form.
Preferably, adopt SnTe and Ge
19Te alloys target cosputtering forms.
As mentioned above, the Sn-Ge-Te thin-film material for phase transition storage of the present invention, have following beneficial effect: data holding ability is strong, Heat stability is good, crystallization rate is fast, and physical property is adjustable; And material preparation process is simple, is convenient to accurately control material composition and subsequent technique; The phase transition storage that uses Sn-Ge-Te material of the present invention to be prepared into can be realized reversible transition under very short potential pulse effect.
Description of drawings
Fig. 1 is shown as the resistance-temperature relationship figure of the Sn-Ge-Te thin-film material of different component.
Fig. 2 is shown as the data holding ability result of calculation figure of the Sn-Ge-Te thin-film material of different component.
It is Sn that Fig. 3 (a) is shown as component
15Ge
43Te
42The phase transition storage that thin-film material preparation forms resistance-voltage relationship figure, wherein potential pulse is 30 nanoseconds, 20 nanoseconds, 10 nanoseconds.
It is Sn that Fig. 3 (b) is shown as component
15Ge
43Te
42The phase transition storage that thin-film material preparation forms resistance-voltage relationship figure, wherein potential pulse was 7 nanoseconds.
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also shown in Fig. 1 to Fig. 3 (b).Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
The invention provides a kind of Sn-Ge-Te thin-film material for phase transition storage, its general formula is Sn
xGe
yTe
z, 0＜x≤22,37≤y≤53,39≤z≤42 wherein.
Ratio can obtain different crystallization temperatures, crystallization activation energy and resistivity to the Sn-Ge-Te thin-film material that is used for phase transition storage of invention between the element by regulating.Wherein, but Sn-Ge-Te thin-film material for phase transition storage of the present invention can be realized the inverse conversion of high low resistance under the electric impulse signal operation, and resistance remains unchanged under the electric impulse signal operation not having; Externally there are 2 and above stable Resistance states under the electric pulse; The 10 annual data confining force temperature that the Sn-Ge-Te thin-film material is higher than GST thin-film material.
Sn-Ge-Te thin-film material for phase transition storage of the present invention can adopt several different methods to form, for example, and sputtering method, electron-beam vapor deposition method, chemical vapour deposition technique, atomic layer deposition method etc.
The present invention also provides a kind of preparation method of the Sn-Ge-Te thin-film material for phase transition storage, adopts the method preparation of SnTe and GeTe alloys target cosputtering, and its element ratio can obtain by the power of regulating different target correspondences.
For example, SnTe and Ge
19The Te alloys target all adopts radio-frequency power supply, and the power of SnTe is from 9W to 25W, Ge
19The power of Te is 30W; Described sputtering time is 25 minutes, comes cosputtering to form Sn-Ge-Te thin-film material of the present invention thus.
Particularly, adopt SnTe target and GeTe alloys target two target co-sputtering technology parameters to comprise: the base vacuum degree is less than 2 * 10
-4Pascal, sputtering pressure is 0.20 Pascal to 0.25 Pascal, and sputter gas is argon, and temperature is room temperature, is applied to radio-frequency power supply power on the SnTe target and is 9 watts to 25 watts, is applied to Ge
19Radio-frequency power supply power on the Te target is fixed as 30 watts, and sputtering time is 30 minutes, and deposit film thickness is 200 nanometers.
The preparation method of phase-change storage material provided by the invention, technology is simple, is convenient to accurately control material composition and subsequent technique.
For assessing the phase-change characteristic of the Sn-Ge-Te thin-film material for phase transition storage of the present invention, comprise crystallization temperature, thermal stability, data holding ability, and the performance of assessment phase transition storage, to every test that the Sn-Ge-Te thin-film material that is used for phase transition storage for preparing on the Semiconductor substrate and the phase-change memory cell that uses Sn-Ge-Te of the present invention as storage medium carry out, test result is as follows:
Fig. 1 is the resistance-temperature relationship figure of the Sn-Ge-Te thin-film material for phase transition storage of the present invention.As can be seen from the figure, the crystallization temperature of Sn-Ge-Te thin-film material can be adjusted between the 200-255 ° of C, increases significantly than GST (about 160 ° of C).The high value of different Sn-Ge-Te thin-film materials reduces along with the increase of Sn content, and low resistance does not have to take place too big variation; In addition, its crystallization temperature reduces along with the increase of Sn content, therefore can control crystallization temperature and the resistivity of phase Sn-Ge-Te thin-film material by the content of regulating Sn.
As shown in Figure 2,10 annual datas of Sn-Ge-Te thin-film material keep temperature to reduce along with the increase of Sn content.10 annual data confining forces of Sn-Ge-Te thin-film material will be higher than GST as can be seen, and wherein, tin content is that the data confining force of 8% o'clock Sn-Ge-Te is best, can reach 137 degree.Simultaneously as can be seen, the thermal stability of Sn-Ge-Te material system and data confining force can be optimized by the content of regulating tin.
The Sn-Ge-Te thin-film material is prepared into phase change memory cell device, obtains the voltage-resistance curve of this phase transition storage after tested, shown in Fig. 3 (a) and Fig. 3 (b).Applying under the electric pulse, described phase transition storage is realized reversible transition.Testing used potential pulse is 30 nanoseconds, 20 nanoseconds, 10 nanoseconds and 7 nanoseconds, under the electric pulse of 30 nanoseconds, can obtain phase transition storage respectively 0.7 and 1.7V realize that " wipings " (resistance of high resistant step-down) and " writing " (low-resistance uprises resistance) operate; It should be noted that phase change memory cell device that the Sn-Ge-Te thin-film material is prepared into can realize " erasable " operation under the electric pulse that was as short as for 7 nanoseconds, this service speed is far faster than the GST material service speed of 500 nanoseconds, under the electric pulse of 7 nanoseconds, " wiping " of unit component and the voltage of " writing " are respectively 2.1 and 4.6V.
In sum, compare with general storage medium, Sn-Ge-Te thin-film material for phase transition storage of the present invention, can can obtain the storage medium of different crystallization temperatures, crystallization activation energy and resistivity by the content of regulating three kinds of elements, and this system phase-change material phase change resistor difference is big, thereby this Sn-Ge-Te series phase-change material has very strong adjustability, can be according to the required specific performance properties that provides of reality.Wherein, Sn
15Ge
43Te
42Have high data confining force, be applied in the phase transition storage, device cell has very fast service speed, and as seen it is the appropriate storage medium material for the preparation of phase transition storage.
So the present invention has effectively overcome various shortcoming of the prior art, the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (8)
1. Sn-Ge-Te thin-film material that is used for phase transition storage, it is characterized in that: the general formula of described Sn-Ge-Te thin-film material is Sn
xGe
yTe
z, 0＜x≤22,37≤y≤53,39≤z≤42 wherein.
2. according to the described Sn-Ge-Te thin-film material for phase transition storage of claim 1, it is characterized in that: preferred formula is Sn
15Ge
43Te
42
3. according to the described Sn-Ge-Te thin-film material for phase transition storage of claim 1, it is characterized in that: described Sn-Ge-Te thin-film material adopts sputtering method, electron-beam vapor deposition method, chemical vapour deposition technique, reaches a kind of formation in the atomic layer deposition method.
4. a preparation method who is used for the Sn-Ge-Te thin-film material of phase transition storage is characterized in that: described Sn-Ge-Te thin-film material employing SnTe and the formation of GeTe alloys target cosputtering; The general formula of described Sn-Ge-Te thin-film material is Sn
xGe
yTe
z, 0＜x≤22,37≤y≤53,39≤z≤42 wherein.
5. the preparation method of the Sn-Ge-Te thin-film material for phase transition storage according to claim 4, it is characterized in that: described Sn-Ge-Te thin-film material adopts SnTe and Ge
1.9Te alloys target cosputtering forms.
6. the preparation method of the Sn-Ge-Te thin-film material for phase transition storage according to claim 5, it is characterized in that: it is the Ge of 30W that described Sn-Ge-Te thin-film material adopts SnTe alloys target and the power of power between 9W to 25W
19Te alloys target cosputtering forms.
7. the preparation method of the Sn-Ge-Te thin-film material for phase transition storage according to claim 6, it is characterized in that: described Sn-Ge-Te thin-film material adopts SnTe and Ge
19The Te alloys target is that cosputtering forms between 0.20 Pascal to 0.25 Pascal at sputtering pressure.
8. the preparation method of the Sn-Ge-Te thin-film material for phase transition storage according to claim 7, it is characterized in that: described Sn-Ge-Te thin-film material adopts SnTe and Ge
19Te alloys target cosputtering formed in 25 minutes.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015096644A1 (en) * | 2013-12-23 | 2015-07-02 | 华为技术有限公司 | Metal-doped germanium telluride-based resistive switching memory material, preparation method, and resistive switching unit component |
| CN114047565A (en) * | 2021-11-01 | 2022-02-15 | 吉林大学 | Phase change material with ultrahigh infrared transmission modulation performance and preparation method thereof |
| CN115491648A (en) * | 2022-10-25 | 2022-12-20 | 吉林大学 | Performance regulation method for combining multistage reflection state and low phase change pressure in solid solution material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040001374A1 (en) * | 2001-12-12 | 2004-01-01 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
| CN102612763A (en) * | 2009-09-11 | 2012-07-25 | 国立大学法人东北大学 | Phase change material and phase change memory element |
-
2013
- 2013-04-12 CN CN2013101281987A patent/CN103236495A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040001374A1 (en) * | 2001-12-12 | 2004-01-01 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory |
| CN102612763A (en) * | 2009-09-11 | 2012-07-25 | 国立大学法人东北大学 | Phase change material and phase change memory element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015096644A1 (en) * | 2013-12-23 | 2015-07-02 | 华为技术有限公司 | Metal-doped germanium telluride-based resistive switching memory material, preparation method, and resistive switching unit component |
| CN114047565A (en) * | 2021-11-01 | 2022-02-15 | 吉林大学 | Phase change material with ultrahigh infrared transmission modulation performance and preparation method thereof |
| CN115491648A (en) * | 2022-10-25 | 2022-12-20 | 吉林大学 | Performance regulation method for combining multistage reflection state and low phase change pressure in solid solution material |
| CN115491648B (en) * | 2022-10-25 | 2023-11-17 | 吉林大学 | Performance regulation and control method with multistage reflection state and low phase transition pressure in solid solution material |
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Application publication date: 20130807 |