CN103236402A - 薄膜晶体管及其制作方法、阵列基板及显示装置 - Google Patents
薄膜晶体管及其制作方法、阵列基板及显示装置 Download PDFInfo
- Publication number
- CN103236402A CN103236402A CN2013101531840A CN201310153184A CN103236402A CN 103236402 A CN103236402 A CN 103236402A CN 2013101531840 A CN2013101531840 A CN 2013101531840A CN 201310153184 A CN201310153184 A CN 201310153184A CN 103236402 A CN103236402 A CN 103236402A
- Authority
- CN
- China
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- film transistor
- thin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 238000005530 etching Methods 0.000 claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 30
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 27
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 5
- 239000003381 stabilizer Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 230000003750 conditioning effect Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 208000034699 Vitreous floaters Diseases 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum ions Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical group CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000009938 salting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明涉及显示技术领域,公开了一种薄膜晶体管制作方法,在基板上形成包括:栅极、栅绝缘层、氧化物半导体层、源漏极层的图形,在形成所述氧化物半导体层图形之后,在所述氧化物半导体层的表面形成金属氧化物的刻蚀阻挡层的图形。本发明的薄膜晶体管制作方法在氧化物半导体层上形成金属氧化物作为刻蚀阻挡层层,金属氧化物能够有效地阻挡外界水汽对氧化物薄膜晶体管的影响,而且在制作时也不会对氧化物半导体层产生损害,从而不会影响氧化物薄膜晶体管性能。
Description
技术领域
本发明涉及显示技术领域,特别涉及一种薄膜晶体管及其制作方法、阵列基板及显示装置。
背景技术
氧化物薄膜晶体管(Thin Film Transistor,TFT)与非晶硅TFT均可作为驱动管用于有机发光二极管(Organic Light-Emitting Diode,OLED)面板及高分子发光二极管(polymer light-emitting diode,PLED)面板等显示面板中。氧化物TFT与非晶硅TFT相比,其载流子浓度是非晶硅TFT的10倍。另外,氧化物TFT可通过磁控溅射(Sputter)的方法制备,因此采用氧化物TFT无需大幅改变现有的液晶面板生产线。同时,由于没有离子注入及激光晶化等工艺所需设备的限制,相对于多晶硅技术,氧化物TFT更有利于大面积的显示面板的生产。
现在国际上氧化物TFT的工艺如下(底栅工艺)形成图1的TFT结构。在玻璃基板110上沉积栅金属并刻蚀形成栅极120,沉积栅绝缘层130及氧化物半导体层140,氧化物半导体通常为铟镓锌氧化物(indium gallium zinc oxide,IGZO)。利用湿刻对氧化物半导体层140进行刻蚀,随后沉积SiOx(硅的氧化物),形成刻蚀阻挡层(ESL)150并刻蚀,最后形成源极160和漏极170。
在现有的SiOx刻蚀阻挡层的制备过程中,反应气氛中的气体分子进入等离子体中,被分解为离子,同时这些带电离子具有非常高的能量,其在经过等离子体喷射至背板表面时会有轰击效应。这种现象会在作为基体的IGZO薄膜表面形成缺陷,在器件的使用过程中,导致TFT的半导体性能恶化。另外,SiOx作为的材料,不能很好地防止水汽向有缘层(氧化物半导体层)扩散(例如:将两块相同工艺,同为SiOx为刻蚀阻挡层材料的背板放入不同的湿度气氛中。经过一段时间后,两块显示面板的半导体特性将有很大的不同,在干燥气氛中的显示面板明显优于湿润气氛中的显示面板)。另外SiOx薄膜的制备一般为化学气相沉积(CVD),此设备是显示背板工业中的主要沉积设备,价格昂贵,占地面积大,而且耗能很大。
发明内容
(一)要解决的技术问题
本发明要解决的技术问题是:如何制作一种有效防水汽的刻蚀阻挡层,以保证影响TFT特性。
(二)技术方案
为解决上述技术问题,本发明提供了一种薄膜晶体管制作方法,在基板上形成包括:栅极、栅绝缘层、氧化物半导体层、源漏极层的图形,在形成所述氧化物半导体层图形之后,在所述氧化物半导体层的表面形成金属氧化物的刻蚀阻挡层的图形。
其中,在氧化物半导体层的表面形成金属氧化物的刻蚀阻挡层的图形的步骤具体包括:
在形成有所述氧化物半导体层的基板表面形成金属层;
通过构图工艺,形成金属氧化物的刻蚀阻挡层的图形。
其中,在形成有所述氧化物半导体层的基板表面形成金属层的步骤具体为:将所述含有金属离子的溶液注射到形成有所述氧化物半导体层的基板表面,并通过化学镀工艺在所述氧化物半导体层表面形成所述金属层。
其中,对所述金属层进行氧化处理形成金属氧化物的刻蚀阻挡层的图形;
所述氧化处理为对形成金属层的基板加热烘干,同时通入氧气。
其中,所述含有金属离子的溶液中包括:络合剂、稳定剂、表面活性剂、加速剂以及PH值调节剂中至少一种。
其中,所述金属氧化物为Al2O3。
本发明还提供了一种薄膜晶体管,包括:形成在基板上的栅极、栅绝缘层、氧化物半导体层及源漏极层,还包括形成在氧化物半导体层的背离所述基板表面的由金属氧化物制成的刻蚀阻挡层。
其中,所述金属氧化物为Al2O3。
本发明还提供了一种阵列基板,包括上述的薄膜晶体管。
本发明还提供了一种显示装置,包括上述的阵列基板。
(三)有益效果
本发明的薄膜晶体管制作方法在氧化物半导体层上形成金属氧化物作为刻蚀阻挡层,金属氧化物能够有效地阻挡外界水汽对氧化物薄膜晶体管的影响,而且在制作时也不会对氧化物半导体层产生损害,从而不会影响氧化物薄膜晶体管性能。
附图说明
图1是现有技术的一种薄膜晶体管结构示意图;
图2是本发明实施例的薄膜晶体管制作方法中在基板上形成栅极、栅绝缘层和氧化物半导体层的示意图;
图3是在图2的基础上形成含有铝离子的溶液示意图;
图4是在图3的基础上含铝离子的溶液形成铝薄膜的示意图;
图5是在图4的基础上铝薄膜氧化形成氧化铝的示意图;
图6是形成源漏电极后最终形成薄膜晶体管的结构示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
本发明的薄膜晶体管制作方法中,在基板之上形成包括:栅极、栅绝缘层、氧化物半导体层、源漏极层的图形,在形成所述氧化物半导体层的图形之后,在其表面形成金属氧化物的刻蚀阻挡层的图形,即刻蚀阻挡层为金属氧化物材料制成。
本实施例中以底栅型TFT为例进行说明,制作方法具体包括如下步骤:
步骤一,如图2所示,在基板上210依次形成包括栅极220、栅绝缘层230及氧化物半导体层240的图形。其中形成过程可以是通过构图工艺(如:包括光刻胶涂敷、曝光、显影、刻蚀、光刻胶剥离等工艺)形成。氧化物半导体可以为IGZO。
步骤二,在氧化物半导体层上形成刻蚀阻挡层的图形,所述刻蚀阻挡层由金属氧化物制成。具体步骤如下:
首先在形成有所述氧化物半导体层的基板表面形成金属层;其次通过构图工艺,形成金属氧化物的刻蚀阻挡层的图形。
如图3和4所示,本实施例中,在形成有所述氧化物半导体层的基板表面形成金属层的步骤具体包括:在形成有所述氧化物半导体层的基板表面覆盖含有金属离子的溶液,并通过化学镀工艺在所述氧化物半导体层240表面形成金属层250'。
本实施例中,采用旋涂设备将所述含有金属离子的溶液注射到形成所述氧化物半导体层之后的基板表面。采用旋涂的方式相对于现有技术中化学气相沉积SiOx薄膜制作刻蚀阻挡层的方式成本低,旋涂设备占地面积小,方便实施,而且耗能较小。
如图5所示,本实施例中,通过构图工艺,形成金属氧化物的刻蚀阻挡层的图形具体为:对所述金属层250'进行氧化处理,以形成金属氧化物的刻蚀阻挡层250。
由于金属薄膜沉积后,金属薄膜表面有较多的旋涂液体,在氧化处理前还可以先对残留的溶液进行清洗,氧化处理可以采用对形成金属层250'的基板加热烘干,并同时通入足量氧气(使金属完全氧化)的方式进行。
所述含有金属离子的溶液中还可以包括:络合剂、稳定剂、表面活性剂、加速剂以及PH值调节剂中一种或两种或多种。
由于铝(Al)具有易被氧化的化学特性,因此本实施例中优选旋涂含有Al3+的化学溶液,可以是含有Al3+的盐溶液,如含Al3+的硫酸盐溶液,如图3所示,溶液中还包括。
优选地,溶液中还包括:络合剂、稳定剂、表面活性剂、加速剂以及PH值调节剂。络合剂(可以为:乙二胺四乙酸或酒石酸)一方面可使铝离子的极化增大,使所得的镀层结晶细致光滑;另一方面可使旋涂的溶液稳定。稳定剂(可以为:Na2S)可以保证Al离子稳定。表面活性剂的作用是降低溶液的表面张力,使反应产生的氢气很容易从析出的铝层表面脱离而降低氢脆作用。氧化处理完成后最终形成Al2O3的刻蚀阻挡层250。
步骤三,形成源漏极层(源极260和漏极270)的图形,最终形成的氧化物TFT的结构示意图如图6所示。
本实施例中,金属氧化物的刻蚀阻挡层能够有效地阻挡外界水汽对氧化物TFT的影响,而且在制作过程中也不会对氧化物半导体层产生损害,从而不会影响氧化物TFT的性能。
本发明的薄膜晶体管制作方法不限于制作底栅型TFT,对于顶栅型TFT同样适用,不同的是各层在基板上形成的顺序不同,对于顶栅型TFT,在基板上依次形成遮光层、绝缘的隔离层、源漏极层,氧化物半导体层、刻蚀阻挡层、栅绝缘层及栅极。形成的刻蚀阻挡层的具体步骤和底栅型类似,此处不再赘述。
本发明中所提到的构图工艺是指将一整层薄膜或涂层通过一定的工艺过程,使该薄膜或涂层形成预定的图形形状的过程。
本发明还提供了一种薄膜晶体管,该薄膜晶体管可以按上述方法制作。该薄膜晶体管包括:形成在基板上的栅极、栅绝缘层、氧化物半导体层及源漏极层。为了更好地保护氧化物半导体层,使得TFT的性能在制作过程中不受影响,制成后不受外界水汽的影响,还包括形成在氧化物半导体层的背离所述基板表面的由金属氧化物制成的刻蚀阻挡层。
对于底栅型TFT,刻蚀阻挡层位于氧化物半导体层和源漏极层之间。对于顶栅型TFT,刻蚀阻挡层位于氧化物半导体层和栅绝缘层之间。
本发明还提供了一种阵列基板,包括栅线、数据线及栅线和数据线交叉形成的像素单元阵列,每个像素单元包括上述的薄膜晶体管。
本发明还提供了一种显示装置,上述的阵列基板,该显示装置可以为:液晶面板、电子纸、OLED面板、PLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。
Claims (10)
1.一种薄膜晶体管制作方法,在基板上形成包括:栅极、栅绝缘层、氧化物半导体层、源漏极层的图形,其特征在于,在形成所述氧化物半导体层图形之后,在所述氧化物半导体层的表面形成金属氧化物的刻蚀阻挡层的图形。
2.如权利要求1所述的薄膜晶体管制作方法,其特征在于,在氧化物半导体层的表面形成金属氧化物的刻蚀阻挡层的图形的步骤具体包括:
在形成有所述氧化物半导体层的基板表面形成金属层;
通过构图工艺,形成金属氧化物的刻蚀阻挡层的图形。
3.如权利要求2所述的薄膜晶体管制作方法,其特征在于,在形成有所述氧化物半导体层的基板表面形成金属层的步骤具体为:将所述含有金属离子的溶液注射到形成有所述氧化物半导体层的基板表面,并通过化学镀工艺在所述氧化物半导体层表面形成所述金属层。
4.如权利要求3所述的薄膜晶体管制作方法,其特征在于,对所述金属层进行氧化处理形成金属氧化物的刻蚀阻挡层的图形;
所述氧化处理为对形成金属层的基板加热烘干,同时通入氧气。
5.如权利要求3所述的薄膜晶体管制作方法,其特征在于,所述含有金属离子的溶液中包括:络合剂、稳定剂、表面活性剂、加速剂以及PH值调节剂中至少一种。
6.如权利要求1~5中任一项所述的薄膜晶体管制作方法,其特征在于,所述金属氧化物为Al2O3。
7.一种薄膜晶体管,包括:形成在基板上的栅极、栅绝缘层、氧化物半导体层及源漏极层,其特征在于,还包括形成在氧化物半导体层的背离所述基板表面的由金属氧化物制成的刻蚀阻挡层。
8.如权利要求7所述的薄膜晶体管,其特征在于,所述金属氧化物为Al2O3。
9.一种阵列基板,其特征在于,包括如权利要求7或8所述的薄膜晶体管。
10.一种显示装置,其特征在于,包括如权利要求9所述的阵列基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310153184.0A CN103236402B (zh) | 2013-04-27 | 2013-04-27 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
PCT/CN2013/089430 WO2014173146A1 (zh) | 2013-04-27 | 2013-12-13 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
US14/347,124 US9397223B2 (en) | 2013-04-27 | 2013-12-13 | Oxide thin film transistor with a metal oxide etch barrier layer, method of manufacturing the same and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310153184.0A CN103236402B (zh) | 2013-04-27 | 2013-04-27 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103236402A true CN103236402A (zh) | 2013-08-07 |
CN103236402B CN103236402B (zh) | 2016-02-03 |
Family
ID=48884435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310153184.0A Active CN103236402B (zh) | 2013-04-27 | 2013-04-27 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9397223B2 (zh) |
CN (1) | CN103236402B (zh) |
WO (1) | WO2014173146A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014173146A1 (zh) * | 2013-04-27 | 2014-10-30 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
CN104300004A (zh) * | 2014-09-01 | 2015-01-21 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
CN108414603A (zh) * | 2018-01-29 | 2018-08-17 | 江南大学 | 一种基于双电层薄膜晶体管的湿度传感器及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9881956B2 (en) * | 2016-05-06 | 2018-01-30 | International Business Machines Corporation | Heterogeneous integration using wafer-to-wafer stacking with die size adjustment |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646699A (zh) * | 2012-01-13 | 2012-08-22 | 京东方科技集团股份有限公司 | 一种氧化物薄膜晶体管及其制备方法 |
CN102651322A (zh) * | 2012-02-27 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制造方法、阵列基板、显示器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009004491A1 (de) * | 2009-01-09 | 2010-07-15 | Merck Patent Gmbh | Funktionelles Material für gedruckte elektronische Bauteile |
EP2425038A2 (de) * | 2009-04-28 | 2012-03-07 | Basf Se | Verfahren zur herstellung von halbleitenden schichten |
US8283653B2 (en) | 2009-12-23 | 2012-10-09 | Intel Corporation | Non-planar germanium quantum well devices |
US8415731B2 (en) * | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
US8728861B2 (en) * | 2011-10-12 | 2014-05-20 | The United States Of America As Represented By The Secretary Of The Air Force | Fabrication method for ZnO thin film transistors using etch-stop layer |
US9419146B2 (en) * | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103236402B (zh) * | 2013-04-27 | 2016-02-03 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
-
2013
- 2013-04-27 CN CN201310153184.0A patent/CN103236402B/zh active Active
- 2013-12-13 US US14/347,124 patent/US9397223B2/en active Active
- 2013-12-13 WO PCT/CN2013/089430 patent/WO2014173146A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646699A (zh) * | 2012-01-13 | 2012-08-22 | 京东方科技集团股份有限公司 | 一种氧化物薄膜晶体管及其制备方法 |
CN102651322A (zh) * | 2012-02-27 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制造方法、阵列基板、显示器件 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014173146A1 (zh) * | 2013-04-27 | 2014-10-30 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
US9397223B2 (en) | 2013-04-27 | 2016-07-19 | Boe Technology Group Co., Ltd | Oxide thin film transistor with a metal oxide etch barrier layer, method of manufacturing the same and display device |
CN104300004A (zh) * | 2014-09-01 | 2015-01-21 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
CN108414603A (zh) * | 2018-01-29 | 2018-08-17 | 江南大学 | 一种基于双电层薄膜晶体管的湿度传感器及其制备方法 |
CN108414603B (zh) * | 2018-01-29 | 2021-06-04 | 江南大学 | 一种基于双电层薄膜晶体管的湿度传感器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US9397223B2 (en) | 2016-07-19 |
WO2014173146A1 (zh) | 2014-10-30 |
CN103236402B (zh) | 2016-02-03 |
US20150171219A1 (en) | 2015-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9947757B2 (en) | Display device, array substrate, and thin film transistor | |
US10217774B2 (en) | Thin film transistor and manufacturing method thereof, array substrate, and display device | |
CN104064688B (zh) | 具有存储电容的tft基板的制作方法及该tft基板 | |
CN107978560B (zh) | 背沟道蚀刻型tft基板及其制作方法 | |
CN103000694B (zh) | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 | |
US10658446B2 (en) | Method for manufacturing OLED backplane comprising active layer formed of first, second, and third oxide semiconductor layers | |
CN102683422B (zh) | 氧化物薄膜晶体管及制作方法、阵列基板、显示装置 | |
CN106098628B (zh) | Tft背板的制作方法及tft背板 | |
CN104659285A (zh) | 适用于amoled的tft背板制作方法及结构 | |
CN102832131A (zh) | 一种柔性igzo薄膜晶体管制造方法 | |
CN103887245B (zh) | 一种阵列基板的制造方法 | |
CN202957251U (zh) | 一种薄膜晶体管、阵列基板和显示装置 | |
CN104952791A (zh) | Amoled显示器件的制作方法及其结构 | |
CN103972299B (zh) | 一种薄膜晶体管及其制作方法、显示基板、显示装置 | |
CN102723279A (zh) | 一种金属氧化物薄膜晶体管的制作方法 | |
CN103700665A (zh) | 金属氧化物薄膜晶体管阵列基板及其制作方法、显示装置 | |
CN107978607B (zh) | 背沟道蚀刻型氧化物半导体tft基板的制作方法 | |
CN103236402B (zh) | 薄膜晶体管及其制作方法、阵列基板及显示装置 | |
CN104218063A (zh) | 有机发光显示装置及其制造方法 | |
CN104916546B (zh) | 阵列基板的制作方法及阵列基板和显示装置 | |
US9899534B2 (en) | Thin-film transistor and method for forming the same | |
CN104167447A (zh) | 一种薄膜晶体管及其制备方法、显示基板和显示设备 | |
CN108258021B (zh) | 薄膜晶体管、其制备方法、阵列基板及显示装置 | |
CN103236400A (zh) | 低温多晶硅薄膜制作方法、薄膜晶体管制作方法 | |
CN107910378B (zh) | Ltps薄膜晶体管、阵列基板及其制作方法、显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |