CN103224388B - Dielectric ceramic composition and electronic component - Google Patents
Dielectric ceramic composition and electronic component Download PDFInfo
- Publication number
- CN103224388B CN103224388B CN201310032130.9A CN201310032130A CN103224388B CN 103224388 B CN103224388 B CN 103224388B CN 201310032130 A CN201310032130 A CN 201310032130A CN 103224388 B CN103224388 B CN 103224388B
- Authority
- CN
- China
- Prior art keywords
- mass parts
- dielectric ceramic
- ceramic composition
- minor component
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 64
- 239000000919 ceramic Substances 0.000 title claims abstract description 61
- 239000000470 constituent Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 28
- 230000006378 damage Effects 0.000 abstract description 6
- 229910010252 TiO3 Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000004939 coking Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 238000005453 pelletization Methods 0.000 description 2
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 235000020985 whole grains Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
In view of such physical truth, the invention is aimed at providing a dielectric ceramic composition with characteristics of high AC destruction electric field value, good temperature characteristics of electrostatic capacitors, and high relative dielectric constant. In addition, the invention is also aimed at providing an electronic component containing a dielectric layer formed by such a dielectric ceramic composition. The invention provides the dielectric ceramic composition which has a main part, a first assistant part, and a second assistant part which are represented by a constitution formula TiO3 (BapSrqCarBis). The q in the constitution formula is below 0.080. The r in the constitution formula is more than 0.020 but less than 0.080. The s in the constitution formula is below 0.002. The summation of the p, q, r, and s in the constitution formula satisfies relation of 0.996 <= p+q+r+s <= 1.010.
Description
Technical field
The present invention relates to dielectric ceramic composition and electronic unit.
Background technology
Ceramic condenser as an example of electronic unit uses in various electronicss, in recent years, more and more higher to the requirement of high performance.
The ceramic condenser using as noise filter due to the Y electrical condenser of switching power circuit is exposed to electric stress (electrical stress) continuously, is therefore necessary to improve the proof voltage of ceramic quality.Therefore,, for Y electrical condenser etc., used the ceramic condenser of safety requirements authentication.As the ceramic condenser of safety requirements authentication, ceramic condenser is not destroyed, and to destroy electric field value be most important for the interchange that improves dielectric ceramics electrical condenser.In addition, in these ceramic condensers, the temperature profile that makes electrostatic capacitance is also well important, has preferably taken into account the electric capacity that exchanges the temperature profile of destroying electric field value and electrostatic capacitance.
In patent documentation 1 and patent documentation 2, disclose to exchange and destroyed the higher dielectric ceramic composition of electric field value.Yet, even if exchange destruction electric field value, all improve, also just about 5kV/mm.In addition, in these documents, openly do not taken into account the dielectric ceramic composition that exchanges the temperature profile of destroying electric field value and electrostatic capacitance.
Prior art
Patent documentation
Patent documentation 1: TOHKEMY 2006-096576 communique
Patent documentation 2: TOHKEMY 2003-104774 communique
Summary of the invention
Invent problem to be solved
The present invention is in view of such practical situation, and its object is to provide a kind of interchange to destroy the dielectric ceramic composition that electric field value temperature profile high, electrostatic capacitance is good, relative permittivity is high.In addition, the present invention also aims to provide a kind of electronic unit with the dielectric layer being formed by such dielectric ceramic composition.
The technique means of dealing with problems
In order to achieve the above object, the inventor etc. study with keen determination, found that by making the specific composition of consisting of of dielectric ceramic composition and making their ratio be specialized range, just can achieve the above object, thereby complete the present invention.
That is, the related dielectric ceramic composition of embodiments of the present invention solving the problems of the technologies described above, is characterized in that, is to have by (Ba
psr
qca
rbi
s) TiO
3the dielectric ceramic composition of the composition formula principal constituent, the 1st minor component and the 2nd minor component that represent, q in described composition formula is below 0.080, r in described composition formula is more than 0.020 below 0.080, s in described composition formula is below 0.002, and the total of the p in described composition formula, q, r and s meets the relation of 0.996≤p+q+r+s≤1.010
Described the 1st minor component is ZnO,
Described the 2nd minor component is at least one the oxide compound being selected from La, Sm and Nd,
Described the 1st minor component, with respect to described principal constituent 100 mass parts, contains below above 10 mass parts of 2.5 mass parts,
Described the 2nd minor component is with respect to described principal constituent 100 mass parts, is scaled oxide compound and contains more than 0.5 mass parts below 2.5 mass parts.
In addition, dielectric ceramic composition is characterised in that, with respect to by described (Ba
psr
qca
rbi
s) TiO
3the principal constituent that represents of composition formula, the amount of described the 1st minor component is α mass parts in season, when the amount of described the 2nd minor component is β mass parts, containing than α/β is more than 2.4 below 12.1.By containing than α/β, meet above-mentioned scope, compare with existing, can obtain interchange disintegration voltage value more than higher 6kV/mm.
According to the present invention, can provide to exchange and destroy the ceramic composition that electric field value temperature profile high, electrostatic capacitance is good, relative permittivity is high.
The electronic unit that embodiments of the present invention are related, has the dielectric layer consisting of described dielectric ceramic composition or the dielectric ceramic composition that obtains by described manufacture method.
Although the electronic unit related as embodiments of the present invention is not particularly limited, exemplified with single panel type ceramic condenser, laminated ceramic capacitor.
The effect of invention
According to the present invention, can provide to exchange and destroy the dielectric ceramic composition that electric field temperature profile high, electrostatic capacitance is good, relative permittivity is high.
Accompanying drawing explanation
[Fig. 1] Fig. 1 (A) is the front elevation of the related ceramic condenser of an embodiment of the invention, and Fig. 1 (B) is the side cross-sectional views of the related ceramic condenser of an embodiment of the invention.
Nomenclature:
2 ceramic condensers
4 protection resins
6,8 lead terminals
10 dielectric layers
12,14 terminal electrodes
Embodiment
Below, based on embodiment explanation embodiments of the present invention shown in the drawings.
Ceramic condenser 2
As shown in Fig. 1 (A), Fig. 1 (B); the related ceramic condenser 2 of embodiments of the present invention becomes the pair of terminal electrode 12 that has dielectric layer 10, forms its apparent surface; 14 and be connected to this terminal electrode 12; 14 lead terminal 6; 8 structure, these protected resins 4 cover.
The shape of ceramic condenser 2 is as long as suitably determine according to object or purposes, but preferably dielectric layer 10 becomes the electrical condenser of the rondelle of circular plate shape.In addition, its size is as long as suitably determine according to object or purposes, but general diameter is 5 ~ 20mm left and right, is preferably 5 ~ 15mm left and right.
(dielectric layer 10)
Dielectric layer 10 consists of dielectric ceramic composition involved in the present invention.
The related dielectric ceramic composition of embodiments of the present invention is to have by (Ba
psr
qca
rbi
s) TiO
3the dielectric ceramic composition of the composition formula principal constituent, the 1st minor component and the 2nd minor component that represent, q in aforementioned component formula is below 0.080, r in aforementioned component formula is more than 0.020 below 0.080, s in aforementioned component formula is below 0.002, and the total of the p in aforementioned component formula, q, r and s meets the relation of 0.996≤p+q+r+s≤1.010.
Q in aforementioned component formula represents the ratio of Sr, and q is 0≤q≤0.080, is preferably 0.020≤q≤0.070.By containing Sr with this scope, have to exchange and destroy the tendency that electric field value improves, the temperature profile of electrostatic capacitance becomes well, relative permittivity improves.If q surpasses 0.08, the temperature profile of electrostatic capacitance departs from.
R in aforementioned component formula represents the ratio of Ca, 0.020≤r≤0.080, preferably 0.030≤r≤0.070.By containing Ca with this scope, have to exchange and destroy the tendency that electric field value improves, the temperature profile of electrostatic capacitance becomes well, relative permittivity improves.If r is less than 0.02, the temperature profile of electrostatic capacitance departs from, if surpass 0.08, relative permittivity reduces.
S in aforementioned component formula represents the ratio of Bi, 0≤s≤0.002, preferably 0≤s≤0.001.By containing Bi with this scope, have to exchange and destroy the tendency that electric field value improves, the temperature profile of electrostatic capacitance becomes well, relative permittivity improves.If s surpasses 0.002, the insulating resistance value of sample declines, and can not evaluate characteristic.
The total of p in aforementioned component formula, q, r and s is total preferably 0.996≤p+q+r+s≤1.010, the more preferably relation of 0.998≤p+q+r+s≤1.010 of the ratio of Ba, Sr, Ca, Bi.By making the total amount of p, q, r and s, be this scope, have to exchange and destroy the tendency that electric field value improves, the temperature profile of electrostatic capacitance becomes well, relative permittivity improves.In p+q+r+s temperature profile of electrostatic capacitance less than 0.996 in the situation that, can depart from, if surpass 1.010, exchange and destroy that electric field value declines and relative permittivity reduces.
The dielectric ceramic composition that embodiments of the present invention are related, as the zinc oxide of the 1st minor component, with respect to the amount of aforementioned principal constituent 100 mass parts, be below above 10.0 mass parts of 2.5 mass parts, more preferably below above 10 mass parts of 4.0 mass parts, more preferably below above 8.0 mass parts of 4.0 mass parts.By making zinc oxide, with respect to the amount of aforementioned principal constituent 100 mass parts, be this scope, the temperature profile that has the raising of the broken ring of interchange electric field value, electrostatic capacitance becomes good tendency.In the situation that as the zinc oxide of the 1st minor component with respect to the amount of aforementioned principal constituent 100 mass parts less than 2.5, the temperature profile of electrostatic capacitance can depart from, if surpass 10, exchanges and destroys that electric field value declines and the temperature profile of electrostatic capacitance departs from.
The dielectric ceramic composition that embodiments of the present invention are related, as the 2nd minor component, comprise at least one being selected from lanthanum trioxide, Samarium trioxide, Neodymium trioxide, they are below above 2.50 mass parts of 0.50 mass parts with respect to the amount of aforementioned principal constituent 100 mass parts, more preferably below above 2.14 mass parts of 0.64 mass parts, more preferably below above 1.72 mass parts of 0.86 mass parts.By comprising, to be selected from least one in lanthanum trioxide, Samarium trioxide, Neodymium trioxide and to make them be this scope with respect to the amount of aforementioned principal constituent 100 mass parts, has and exchange that broken ring electric field value improves, the temperature profile of electrostatic capacitance becomes good, relative permittivity and become good tendency.
In addition, the dielectric ceramic composition that embodiments of the present invention are related, with respect to by aforementioned (Ba
psr
qca
rbi
s) TiO
3the principal constituent that represents of composition formula and to make the amount of aforementioned the 1st minor component be α mass parts, when the amount of described the 2nd minor component is β mass parts, containing than α/β is more than 2.4 below 12.1.By becoming such formation, have and exchange the tendency that disintegration voltage value improves.
The thickness of dielectric layer 10 is not particularly limited, and can suitably determine according to purposes etc., but be preferably 0.3 ~ 2mm.By making the thickness of dielectric layer 10, be such scope, can be applicable to mesohigh purposes.
(terminal electrode 12,14)
Terminal electrode 12,14 consists of electro-conductive material.The electro-conductive material using as terminal electrode 12,14, can enumerate such as Cu, Cu alloy, Ag, Ag alloy, In-Ga alloy etc.
The manufacture method of ceramic condenser
Below, the manufacture method of ceramic condenser is described.
First, manufacture is formed with the dielectric ceramic composition powder of the dielectric layer 10 shown in Fig. 1 after burning till.
Prepare the raw material of principal constituent and the raw material of the 1st minor component and the 2nd minor component.As the raw material of principal constituent, each oxide compound of Ba, Sr, Ca, Bi, Ti be can enumerate and/or the raw material of oxide compound or their composite oxides etc. become by burning till, for example can use BaCO
3, SrCO
3, CaCO
3, Bi
2o
3, TiO
2deng.In addition, such as can use oxyhydroxide etc., become the various compounds of oxide compound or titanium compound after burning till.In this case, can suitably change amount, to mate first prime number of metallic element.
As minor component, be not particularly limited, can use the oxide compound of each above-mentioned minor component or composite oxides or by burning till the various compounds that become these oxide compounds or composite oxides, such as can suitably selecting to use from carbonate, nitrate, oxyhydroxide, organometallic compound etc.
As the manufacture method of the related dielectric ceramic composition of embodiments of the present invention, first allocate the raw material of principal constituent, use and to utilize the ball mill etc. of zirconia ball etc. to carry out wet mixing.
Resulting mixture is carried out to granulation and shaping, and resulting molding is placed in to air atmosphere carries out pre-burning, can obtain pre-burning powder thus.As the condition of pre-burning, for example can make calcined temperature be preferably 1100 ~ 1300 ℃, more preferably 1150 ~ 1250 ℃, make the pre-burning time be preferably 0.5 ~ 4 hour.
By ball mill etc., to following resulting pre-burning powder, carry out case of wet attrition dry, can obtain base material.In addition, the raw material of allotment the 1st and the 2nd minor component, and by ball mill, mix together with base material, dry, become dielectric ceramic composition powder.As described above, by manufacturing dielectric ceramic composition powder by solid phase method, can realize desired characteristic, and seek the reduction of manufacturing cost.
Then, resulting dielectric ceramic composition is added to appropriate tackiness agent, granulation, is configured as and has the discoideus of prescribed level resulting granules, becomes thus green compact molding.Then, by resulting green compact molding is burnt till, obtain the sintered compact of dielectric ceramic composition.Have, as the condition of burning till, be not particularly limited, but keep temperature to be preferably 1200 ~ 1400 ℃, more preferably 1250 ~ 1350 ℃, firing atmosphere is preferably in air.
At the major surfaces printing end sub-electrode of the sintered compact of resulting dielectric ceramic composition, and carry out as required sintering, form thus terminal electrode 12,14., by welding wait lead terminal 6,8 be engaged in to terminal electrode 12,14 thereafter, last, by use, protect resin 4 cladding element main bodys, obtain the single panel type ceramic condenser shown in Fig. 1 (A), Fig. 1 (B).
The ceramic condenser of the present invention of manufacturing is like this arranged on printed base plate via lead terminal 6,8, can use at various electronicss etc.
Above, embodiments of the present invention have been described, but the present invention is not limited to such embodiment, in the scope that does not depart from purport of the present invention, can implements with different sample states.
For example, in the above-described embodiment, it as electronic unit involved in the present invention, exemplified with dielectric layer, is the single panel type ceramic condenser of individual layer, but as electronic unit involved in the present invention, being not limited to single panel type ceramic condenser, can be also the laminated ceramic electrical condenser of being made by common print process or slice method that has used the dielectric medium lotion that comprises above-mentioned dielectric ceramic composition and electrode pastes.
[embodiment]
Below, based on more detailed embodiment, the present invention is described, but the present invention is not limited to these embodiment.
Sample 1 ~ 49
As the raw material of principal constituent, prepare respectively BaCO
3, SrCO
3, CaCO
3, Bi
2o
3, TiO
2.Then, according to the composition shown in the sample of table 11 ~ 45, weigh respectively these raw materials prepare, by having used pure water to carry out wet mixing as the ball mill that utilizes zirconia ball of solvent.
Then,, after resulting mixture is dried, carry out preliminary shaping.Then, resulting pre-formed articles is placed in to air, pre-burning under the condition of 1150 ℃, 2 hours.Powder after pre-burning is carried out after coarse reduction with mixing and kneading machine, according to the composition shown in table 1, weigh and add ZnO and the 2nd minor component, carry out case of wet attrition.By making it dry, obtain having the dielectric ceramic composition of each composition (each of sample 1 ~ 45 forms) shown in table 1.
With respect to resulting dielectric ceramic composition powder 100 mass parts, add polyvinyl alcohol water solution 10 mass parts, with mortar mix on one side use sieve whole grain on one side, pelletizing obtained.Resulting pelletizing is obtained to the discoideus green compact molding of diameter 16.5mm, the about 1.2mm of thickness with the pressure of 396Mpa.
Resulting green compact molding is placed in air, under the condition of 1250 ~ 1350 ℃, 2 hours, burns till, and obtains thus discoideus sintered compact.
Then, at the coated on both sides Cu electrode of the major surfaces of resulting sintered compact, then be placed in reduction atmosphere, at 800 ℃, carry out the sintering processes of 10 minutes, obtain thus the sample of the such discoideus ceramic condenser shown in Fig. 1.The thickness of the dielectric layer 10 of resulting electrical condenser sample is about 1mm, and the diameter of sintered electrode is 12mm.
Then, for resulting each electrical condenser sample, by following method, evaluate respectively and exchange the temperature profile of destroying electric field, relative permittivity, electrostatic capacitance.Evaluation result is illustrated in table 1.
(exchange and destroy electric field value)
About exchange destroying electric field value, the sample to electrical condenser puts on the alternating-electric field of 100V/s lentamente the two ends of electrical condenser in fluoridizing liquid (FLUORINERT), and the electric field value when the current flowing of 100mA destroys electric field value and measures as exchanging.Exchange destruction electric field value more high better, in the present embodiment, 6.0kV/mm is good above.
(relative permittivity)
At 20 ℃ of reference temperatures, utilize digital LCR survey meter (4274A processed of Agilent Technology company), from the condition at frequency 1kHz, incoming signal level (measuring voltage) 1.0Vrms, measured electrostatic capacitance is calculated relative permittivity (without unit).Relative permittivity is more high better, in the present embodiment, more than 2200 is good.
(temperature profile of electrostatic capacity)
To electrical condenser sample, measurement of electrostatic capacity under the temperature range of-25 ℃ ~ 85 ℃, and calculate electrostatic capacitance at-25 ℃ and 85 ℃ with respect to the velocity of variation (unit: %) of the electrostatic capacitance at 20 ℃.In the present embodiment, electrostatic capacitance change rate is good between-15% ~ 15%.
Table 1
Content as can be recognized from Table 1.
The 1st minor component is improved coking property and makes the effect of sample dense sintering.According to sample 14 ~ 20, the amount with respect to above-mentioned principal constituent 100 mass parts that can confirm the 1st minor component is the situation below above 10.0 mass parts of 2.5 mass parts, compare at this extraneous sample 13, sample 21 with the amount of aforementioned the 1st minor component, exchange destruction electric field value or relative permittivity good.
The 2nd minor component and the 1st minor component are similarly improved coking property and make the effect of sample dense sintering.According to sample 5,31 ~ 40, can confirm that the 2nd minor component is that the amount with respect to above-mentioned principal constituent 100 mass parts of lanthanum trioxide is the situation below above 2.50 mass parts of 0.50 mass parts, compare at this extraneous sample 30, sample 41 with the amount of aforementioned the 2nd minor component, exchange destruction electric field value good, and the temperature profile of electrostatic capacitance is also good.
According to sample 14 ~ 20,31 ~ 40, can confirm zinc oxide and lanthanum trioxide with respect to above-mentioned principal constituent 100 mass parts to contain than (α/β) be more than 2.4 situation below 12.1, be that aforementioned zinc oxide is to compare at this extraneous sample 13, sample 21, sample 30, sample 41 containing than (α/β) of aforementioned lanthanum trioxide with the 2nd minor component with the 1st minor component, exchange destruction electric field value and uprise.
According to sample 23 ~ 28, can confirm the situation that adds up to 0.996≤p+q+r+s≤1.010 of p, q, r and s in composition formula, to compare with the situation (test portion 22,29) that the total of s departs from this scope with p, q, r, the temperature profile of electrostatic capacitance is good.
According to sample 2 ~ 8, can confirm the situation that the r in composition formula is 0.020≤r≤0.080, be 0(sample 1 with r) compare, the temperature profile of electrostatic capacitance is good.In addition, can confirm that with r be 0.09(sample 9) to compare, relative permittivity improves.
According to sample 6,10,11, can confirm that the situation that the s in composition formula is 0≤s≤0.002 compares with the situation (sample 12) that s departs from this scope, without exaggerated grain growth, exchange and destroy electric field value and improve, relative permittivity improves, and the temperature profile of electrostatic capacitance is good.
According to sample 42 ~ 46, can confirm that the situation that the q in composition formula is 0≤q≤0.080 is 0.10(sample 47 with q) to compare, the temperature profile of electrostatic capacitance is good.
According to sample 48,49, even if can confirm that at the 2nd minor component be Sm
2o
3, Nd
2o
3situation under, exchange to destroy electric field value and improve, relative permittivity improves, the temperature profile of electrostatic capacitance is good.
Claims (3)
1. a dielectric ceramic composition, is characterized in that,
To have by (Ba
psr
qca
rbi
s) TiO
3the dielectric ceramic composition of the composition formula principal constituent, the 1st minor component and the 2nd minor component that represent, q in described composition formula is below 0.080, r in described composition formula is more than 0.020 below 0.080, s in described composition formula is below 0.002, and the total of the p in described composition formula, q, r and s meets the relation of 0.996≤p+q+r+s≤1.010
Described the 1st minor component is ZnO,
Described the 2nd minor component is at least one the oxide compound being selected from La, Sm and Nd,
Described the 1st minor component, with respect to described principal constituent 100 mass parts, contains below above 10 mass parts of 2.5 mass parts,
Described the 2nd minor component is with respect to described principal constituent 100 mass parts, is scaled oxide compound and contains more than 0.5 mass parts below 2.5 mass parts.
2. dielectric ceramic composition according to claim 1, is characterized in that,
With respect to by described (Ba
psr
qca
rbi
s) TiO
3the principal constituent that represents of composition formula, the amount of described the 1st minor component is α mass parts in season, when the amount of described the 2nd minor component is β mass parts, containing than α/β is more than 2.4 below 12.1.
3. an electronic unit, is characterized in that,
There is the dielectric layer being formed by the dielectric ceramic composition described in claim 1 or 2.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012015478 | 2012-01-27 | ||
| JP2012-015478 | 2012-01-27 | ||
| JP2012250266A JP6020068B2 (en) | 2012-01-27 | 2012-11-14 | Dielectric porcelain composition and electronic component |
| JP2012-250266 | 2012-11-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103224388A CN103224388A (en) | 2013-07-31 |
| CN103224388B true CN103224388B (en) | 2014-12-10 |
Family
ID=48835064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310032130.9A Active CN103224388B (en) | 2012-01-27 | 2013-01-28 | Dielectric ceramic composition and electronic component |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101429034B1 (en) |
| CN (1) | CN103224388B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7315902B2 (en) * | 2020-03-25 | 2023-07-27 | Tdk株式会社 | Dielectric porcelain composition and electronic parts |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306288A (en) * | 2000-01-20 | 2001-08-01 | 江苏理工大学 | Medium for high-voltage ceramic capacitor |
| JP2003104774A (en) * | 2001-09-27 | 2003-04-09 | Murata Mfg Co Ltd | Dielectric porcelain composition and capacitor using the same |
| CN1532166A (en) * | 2003-03-21 | 2004-09-29 | 广东风华高新科技集团有限公司 | Method for producing high dielectric constant ceramic powder and ceramic capacitor |
| JP2006096576A (en) * | 2004-09-28 | 2006-04-13 | Murata Mfg Co Ltd | Dielectric ceramic and ceramic capacitor |
| CN101971381A (en) * | 2008-03-19 | 2011-02-09 | 国立大学法人山梨大学 | Piezoelectric material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3631341B2 (en) * | 1996-10-18 | 2005-03-23 | Ｔｄｋ株式会社 | Multilayer composite functional element and method for manufacturing the same |
-
2013
- 2013-01-24 KR KR1020130007936A patent/KR101429034B1/en active IP Right Grant
- 2013-01-28 CN CN201310032130.9A patent/CN103224388B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306288A (en) * | 2000-01-20 | 2001-08-01 | 江苏理工大学 | Medium for high-voltage ceramic capacitor |
| JP2003104774A (en) * | 2001-09-27 | 2003-04-09 | Murata Mfg Co Ltd | Dielectric porcelain composition and capacitor using the same |
| CN1532166A (en) * | 2003-03-21 | 2004-09-29 | 广东风华高新科技集团有限公司 | Method for producing high dielectric constant ceramic powder and ceramic capacitor |
| JP2006096576A (en) * | 2004-09-28 | 2006-04-13 | Murata Mfg Co Ltd | Dielectric ceramic and ceramic capacitor |
| CN101971381A (en) * | 2008-03-19 | 2011-02-09 | 国立大学法人山梨大学 | Piezoelectric material |
Non-Patent Citations (2)
| Title |
|---|
| 改性钛酸钡陶瓷及其介电调谐性能;王天;《浙江大学硕士学位论文》;20041231;全文 * |
| 王天.改性钛酸钡陶瓷及其介电调谐性能.《浙江大学硕士学位论文》.2004,全文. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103224388A (en) | 2013-07-31 |
| KR101429034B1 (en) | 2014-08-11 |
| KR20130087419A (en) | 2013-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5664228B2 (en) | Dielectric porcelain composition and electronic component | |
| CN103449812B (en) | Dielectric ceramic composition and electronic device | |
| KR101767672B1 (en) | Dielectric ceramic composition and electronic component | |
| WO2014010376A1 (en) | Laminate ceramic capacitor and method for producing same | |
| CN103224388B (en) | Dielectric ceramic composition and electronic component | |
| CN101333105B (en) | X7RMLCC medium porcelain of thin medium | |
| JP6376001B2 (en) | Dielectric composition | |
| TWI476170B (en) | Dielectric ceramic compositions and electronic components | |
| CN105985100A (en) | Dielectric composition and electronic member | |
| TWI412504B (en) | A dielectric ceramic composition, a method for preparing a dielectric ceramic composition, and an electronic component | |
| JP6020068B2 (en) | Dielectric porcelain composition and electronic component | |
| JP6376002B2 (en) | Dielectric composition | |
| TWI443079B (en) | Dielectric ceramic compositions and electronic components | |
| JPS63307160A (en) | Dielectric porcelain composition | |
| JPH0736288B2 (en) | Dielectric ceramic composition and method for producing the same | |
| JPS61251565A (en) | Ceramic dielectric composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |