CN103219152A - Electrostatic condenser based on nano electrodes and preparation method of electrostatic condenser - Google Patents
Electrostatic condenser based on nano electrodes and preparation method of electrostatic condenser Download PDFInfo
- Publication number
- CN103219152A CN103219152A CN2013101539626A CN201310153962A CN103219152A CN 103219152 A CN103219152 A CN 103219152A CN 2013101539626 A CN2013101539626 A CN 2013101539626A CN 201310153962 A CN201310153962 A CN 201310153962A CN 103219152 A CN103219152 A CN 103219152A
- Authority
- CN
- China
- Prior art keywords
- hole
- hole array
- nano
- array
- electrostatic condenser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses an electrostatic condenser based on nano electrodes and a preparation method of the electrostatic condenser. The condenser comprises two groups of pore arrays which are inserted into each other in parallel, are not communicated with each other, are provided with openings towards different surfaces and are arranged in an anode aluminum oxide template, wherein carbon nano tubes electrically connected with conductive films covering the surfaces of the pore arrays are deposited in pores. The method comprises the following steps of: preparing a secondary aluminum oxide template in a secondary anode oxidation method, wherein one surface of the template is provided with a first pore array, and the back of the template is provided with gaps which are parallel to pores of the first pore array and formed in the circumference of an arc barrier layer formed by the pores of the first pore array; corroding the back of the secondary aluminum oxide template in an acidic copper chloride solution to obtain the anode aluminum oxide template on one surface of which the first pore array is arranged and on the back of which a second pore array is arranged; and depositing the carbon nano tubes in the pores of the first pore array and the second pore array by a chemical vapor deposition technology, and performing evaporation on the conductive films on the two surfaces of the anode aluminum oxide template, thus obtaining the target product. The electrostatic condenser can be widely applied to the field of energy storage and utilization.
Description
Technical field
The present invention relates to a kind of electrostatic condenser and preparation method, especially a kind of electrostatic condenser based on nano-electrode and preparation method thereof.
Background technology
Electrostatic condenser is with a kind of energy storage device of charge storage in electrode surface by electrostatic interaction.General electrostatic condenser is because of only there being the electrode surface can stored charge, so it has lower energy storage density.Appearance along with nano material and technology, people utilize porous material to realize the high-specific surface area of electrode, make the electric capacity and the energy storage density of electrostatic condenser obtain significantly improving, as Nanotubular metal insulator metal capacitor arrays for energy storage, Nature Nanotechnology, 2009,4,292.(be used for the nanotube-shaped metal-insulator material-metal capacitor array of energy storage, the nature nanometer technology, 2009, the 4th volume, the 292nd page) literary composition introduces.The array of capacitors of mentioning in this article is equipped with tubulose titanium nitride, aluminium oxide and three layers of a pair of coaxial electrode that is socketed to form of titanium nitride in the nano-pore of the composition hole of anodic oxidation aluminium formwork array; The preparation method is for to obtain product by technique for atomic layer deposition depositing titanium nitride successively, aluminium oxide and titanium nitride in the hole of anodic oxidation aluminium formwork.But, no matter be product, or its preparation method, all exist weak point, at first, though product has high electrode specific surface area, because of it is that titanium nitride inside and outside dielectric layer, the dielectric layer is that the array of capacitors of nano-pore pair of electrodes, that be arranged in anodic oxidation aluminium formwork constitutes with the intermediate alumina, so its external electrical connection is exactly a difficult problem, this has increased the difficulty of practical application widely; Secondly, technique for atomic layer deposition is difficult to the tubular material of composite tube wall thickness homogeneous in the hole of nanoscale, the tubular material of the pipe thickness homogeneous of synthesizing multilayer socket in the hole of nanoscale particularly, and it can not guarantee the consistency of product property; At last, the equipment price of utilization technique for atomic layer deposition is high, makes the preparation cost of product be difficult to reduce, and is unfavorable for the commercial applications of product.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of rational in infrastructure, practical for overcoming weak point of the prior art, uses easily the electrostatic condenser based on nano-electrode.
Another technical problem that the present invention will solve is for providing a kind of preparation method of above-mentioned electrostatic condenser based on nano-electrode.
For solving technical problem of the present invention, the technical scheme that is adopted is: the electrostatic condenser based on nano-electrode comprises anodic oxidation aluminium formwork, particularly,
Being equipped with two groups in the described anodic oxidation aluminium formwork is parallel to each other to slotting and disconnected mutually, opening respectively towards the hole of different surfaces array, deposit carbon nano-tube in the hole of described two groups of hole arrays, described carbon nano-tube is electrically connected with the conducting film that the anodic oxidation aluminium formwork surface is covered with;
The bore dia of the first hole array in described two groups of hole arrays is that 30～50nm, hole depth are 30～50 μ m, and the bore dia of the second hole array is that 20～30nm, hole depth are 15～35 μ m;
The thickness of pipe wall of described carbon nano-tube is 5～9nm, and its external diameter of pipe and pipe range are same as the bore dia and the hole depth of hole, place array.
As the further improvement based on the electrostatic condenser of nano-electrode, the described second hole array is the regularly arranged hole array of hexagonal for the periphery of the circular arc barrier layer that its orifice ring forms around the hole of the first hole array; The described first hole array is the hole array that six sides arrange in order; The thickness of described conducting film is 100～200nm, and it is golden film, or silverskin, or copper film, or the nickel film, or the tin film
For solving another technical problem of the present invention, another technical scheme that is adopted is: the preparation method of above-mentioned electrostatic condenser based on nano-electrode comprises the two-step anodization method, and particularly key step is as follows:
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 18～20wt% and mixed solution that concentration is the copper chloride solution of 0.15～0.25mol/L corrode 30～40min, obtain it and simultaneously be equipped with the first hole array, the back side is equipped with the anodic oxidation aluminium formwork of the second hole array, re-use chemical vapour deposition technique, simultaneously be equipped with the first hole array in it, the back side is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, two sides evaporation conducting film respectively at anodic oxidation aluminium formwork makes the electrostatic condenser based on nano-electrode.
As further improvement based on the preparation method of the electrostatic condenser of nano-electrode, described before aluminium flake is carried out anodic oxidation, earlier it is dried up with nitrogen after acetone, ethanol and deionized water ultrasonic cleaning; During described corrosion secondary oxidation aluminum alloy pattern plate back, the temperature of the mixed solution of hydrochloric acid solution and copper chloride solution is 20～30 ℃; Described use chemical vapour deposition technique temperature during deposition of carbon nanotubes in the hole of the first hole array and the second hole array is 550～600 ℃, gas carrier is an argon gas, raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min; Described evaporation is the thermal evaporation plating, or magnetron sputtering, or electron beam evaporation plating; Described conducting film is golden film, or silverskin, or copper film, or the nickel film, or the tin film.
Beneficial effect with respect to prior art is, one, use ESEM and X-ray diffractometer to characterize respectively to the target product that makes, by its result as can be known, target product is to place two groups of anodic oxidation aluminium formwork to be parallel to each other to slotting and disconnected mutually, opening respectively towards the hole of different surfaces array, deposits the carbon nano-tube that the conducting film that is covered with the anodic oxidation aluminium formwork surface is electrically connected in the hole of two groups of hole arrays; Wherein, the bore dia of the first hole array in two groups of hole arrays is that 30～50nm, hole depth are 30～50 μ m, the bore dia of the second hole array is that 20～30nm, hole depth are 15～35 μ m, the thickness of pipe wall of carbon nano-tube is 5～9nm, and its external diameter of pipe and pipe range are same as the bore dia and the hole depth of hole, place array.Its two, use electrochemical workstation to carry out performance test to the target product that makes, its result shows that target product not only has high ratio electric capacity, and higher puncture voltage is also arranged, as calculated, its energy storage density is up to 10Wh/kg.They are three years old, the preparation method is simple, science, efficient: both utilized high specific area of alumina formwork and aperture, the uniform characteristics of pore wall thickness fully, directly be with the anodic oxidation aluminium formwork dielectric layer made have high ratio electric capacity, higher operating voltage, the better electrostatic condenser of stability; Solve the difficult problem that the nanoscale electrostatic condenser externally is electrically connected again simultaneously, greatly improved the possibility of target product practical application; Also because of having avoided using technique for atomic layer deposition not only to reduce the difficulty of making, guaranteed the consistency of target product performance, also reduced simultaneously the cost of the investment and the making of making apparatus widely, the utmost point is beneficial to the large-scale production and business-like the applying of target product; More have technology easy, quick, made with settling at one go rational in infrastructure, practical, the electrostatic condenser of the high energy storage density that can directly use.
Further embodiment as beneficial effect, one is that the periphery that the second hole array is preferably the circular arc barrier layer that its orifice ring forms around the hole of the first hole array is the regularly arranged hole array of hexagonal, the first hole array is preferably the hole array that six sides arrange in order, not only be easy to obtain highly to arrange orderly two groups and be parallel to each other, also because the barrier layer of arc-shaped structure can suppress most advanced and sophisticated electric field strengthens phenomenon and relatively improved dielectric strength between the hole of the first hole array and the second hole array the hole array of inserting.The 2nd, the thickness of conducting film is preferably 100～200nm, and it is preferably golden film, or silverskin, or copper film, or the nickel film, or the tin film, except that having satisfied intensity, also makes the source of raw material than horn of plenty, and makes the easier enforcement of preparation technology and flexibly.The 3rd, preferably before aluminium flake is carried out anodic oxidation, earlier it is dried up with nitrogen after acetone, ethanol and deionized water ultrasonic cleaning, be convenient to anodisedly carry out smoothly.The 4th, during corrosion secondary oxidation aluminum alloy pattern plate back, the temperature of the mixed solution of hydrochloric acid solution and copper chloride solution is preferably 20～30 ℃, is beneficial to effectively carrying out of corrosion.Five are to use chemical vapour deposition technique temperature during deposition of carbon nanotubes in the hole of the first hole array and the second hole array to be preferably 550～600 ℃, gas carrier is preferably argon gas, raw material is preferably acetylene gas, the flow of argon gas and acetylene gas is preferably 100ml/min and 4ml/min respectively, is beneficial to the deposition of carbon nano-tube.The 6th, evaporation is preferably the thermal evaporation plating, or magnetron sputtering, or electron beam evaporation plating, is beneficial to the flexible enforcement of evaporation process.
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
Fig. 1 is to one of middle product---alumina formwork uses one of result that ESEM (SEM) characterizes.Wherein, Fig. 1 a is the SEM image of once oxidation aluminum alloy pattern plate; Fig. 1 b is the SEM image that the secondary oxidation aluminum alloy pattern plate has been removed the unoxidized aluminium back part in the back side, can see the circular arc barrier layer that forms behind the secondary oxidation by it; Fig. 1 c is the SEM image at the secondary oxidation aluminum alloy pattern plate back of process acidic copper chloride solution corrosion, and it demonstrates the second hole array and has formed; Fig. 1 d simultaneously is equipped with the SEM image of oblique section that the first hole array, the back side are equipped with the anodic oxidation aluminium formwork of the second hole array for it, and it shows that being equipped with two groups in the anodic oxidation aluminium formwork is parallel to each other to slotting and disconnected mutually, opening respectively towards the hole of different surfaces array.
Fig. 2 is to two of middle product---the anodic oxidation aluminium formwork that deposits carbon nano-tube in its hole uses one of result that ESEM characterizes.Wherein, Fig. 2 a is the SEM image of two oblique section of intermediate product; Fig. 2 b is the SEM image at two back sides of intermediate product, and it has represented the pattern of the second hole array that deposits carbon nano-tube in the hole.
Fig. 3 uses one of result that German Zahner Im6ex type electrochemical workstation characterizes to target product.Its result shows that the ratio electric capacity on the unit micron thickness unit are of target product has reached 5 μ F/cm
2, puncture voltage is 18～23V; Its energy storage density is up to 10Wh/kg as calculated.Schematic diagram when the illustration among the figure is the test puncture voltage.
Embodiment
At first buy or make with conventional method from market:
Acetone; Ethanol; Deionized water; Aluminium flake; Sulfuric acid solution; Oxalic acid solution; Aluminum sulfate solution; The butter of tin saturated solution; Hydrochloric acid solution; Copper chloride solution; Argon gas; Acetylene gas; Gold, silver, copper, nickel and tin as conducting membrane material.Then,
The concrete steps of preparation are:
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 18wt% and mixed solution that concentration is the copper chloride solution of 0.25mol/L corrode 30min, obtains being similar to shown in Fig. 1 c and Fig. 1 d its and simultaneously is equipped with the anodic oxidation aluminium formwork that the first hole array, the back side are equipped with the second hole array.Re-use chemical vapour deposition technique, simultaneously being equipped with the first hole array, the back side in it is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, respectively at the two sides evaporation conducting film of anodic oxidation aluminium formwork; Wherein, the temperature during deposition of carbon nanotubes is 550 ℃, and gas carrier is an argon gas, and raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min, and evaporation is the thermal evaporation plating, and the material of conducting film is a gold.Make the electrostatic condenser shown in the curve among Fig. 3 based on nano-electrode.
Embodiment 2
The concrete steps of preparation are:
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 18.5wt% and mixed solution that concentration is the copper chloride solution of 0.23mol/L corrode 33min, obtains being similar to shown in Fig. 1 c and Fig. 1 d its and simultaneously is equipped with the anodic oxidation aluminium formwork that the first hole array, the back side are equipped with the second hole array.Re-use chemical vapour deposition technique, simultaneously being equipped with the first hole array, the back side in it is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, respectively at the two sides evaporation conducting film of anodic oxidation aluminium formwork; Wherein, the temperature during deposition of carbon nanotubes is 560 ℃, and gas carrier is an argon gas, and raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min, and evaporation is the thermal evaporation plating, and the material of conducting film is a gold.Make the electrostatic condenser shown in the curve among Fig. 3 based on nano-electrode.
The concrete steps of preparation are:
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 19wt% and mixed solution that concentration is the copper chloride solution of 0.2mol/L corrode 35min, obtains shown in Fig. 1 c and Fig. 1 d its and simultaneously is equipped with the anodic oxidation aluminium formwork that the first hole array, the back side are equipped with the second hole array.Re-use chemical vapour deposition technique, simultaneously being equipped with the first hole array, the back side in it is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, respectively at the two sides evaporation conducting film of anodic oxidation aluminium formwork; Wherein, the temperature during deposition of carbon nanotubes is 575 ℃, and gas carrier is an argon gas, and raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min, and evaporation is the thermal evaporation plating, and the material of conducting film is a gold.Make the electrostatic condenser shown in the curve among Fig. 3 based on nano-electrode.
The concrete steps of preparation are:
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 19.5wt% and mixed solution that concentration is the copper chloride solution of 0.18mol/L corrode 38min, obtains being similar to shown in Fig. 1 c and Fig. 1 d its and simultaneously is equipped with the anodic oxidation aluminium formwork that the first hole array, the back side are equipped with the second hole array.Re-use chemical vapour deposition technique, simultaneously being equipped with the first hole array, the back side in it is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, respectively at the two sides evaporation conducting film of anodic oxidation aluminium formwork; Wherein, the temperature during deposition of carbon nanotubes is 590 ℃, and gas carrier is an argon gas, and raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min, and evaporation is the thermal evaporation plating, and the material of conducting film is a gold.Make the electrostatic condenser shown in the curve among Fig. 3 based on nano-electrode.
The concrete steps of preparation are:
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 20wt% and mixed solution that concentration is the copper chloride solution of 0.15mol/L corrode 40min, obtains being similar to shown in Fig. 1 c and Fig. 1 d its and simultaneously is equipped with the anodic oxidation aluminium formwork that the first hole array, the back side are equipped with the second hole array.Re-use chemical vapour deposition technique, simultaneously being equipped with the first hole array, the back side in it is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, respectively at the two sides evaporation conducting film of anodic oxidation aluminium formwork; Wherein, the temperature during deposition of carbon nanotubes is 600 ℃, and gas carrier is an argon gas, and raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min, and evaporation is the thermal evaporation plating, and the material of conducting film is a gold.Make the electrostatic condenser shown in the curve among Fig. 3 based on nano-electrode.
Selecting temperature more respectively for use is that 5～15 ℃ oxalic acid solution is as the electrolyte of once oxidation, evaporation is selected thermal evaporation plating or magnetron sputtering or electron beam evaporation plating for use, conducting membrane material is selected gold or silver or copper or nickel or tin for use, repeat the foregoing description 1～5, made the electrostatic condenser shown in the curve among Fig. 3 equally based on nano-electrode.
Obviously, those skilled in the art can carry out various changes and modification to electrostatic condenser based on nano-electrode of the present invention and preparation method thereof and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the electrostatic condenser based on nano-electrode comprises anodic oxidation aluminium formwork, it is characterized in that:
Being equipped with two groups in the described anodic oxidation aluminium formwork is parallel to each other to slotting and disconnected mutually, opening respectively towards the hole of different surfaces array, deposit carbon nano-tube in the hole of described two groups of hole arrays, described carbon nano-tube is electrically connected with the conducting film that the anodic oxidation aluminium formwork surface is covered with;
The bore dia of the first hole array in described two groups of hole arrays is that 30～50nm, hole depth are 30～50 μ m, and the bore dia of the second hole array is that 20～30nm, hole depth are 15～35 μ m;
The thickness of pipe wall of described carbon nano-tube is 5～9nm, and its external diameter of pipe and pipe range are same as the bore dia and the hole depth of hole, place array.
2. the electrostatic condenser based on nano-electrode according to claim 1 is characterized in that the second hole array is the regularly arranged hole array of hexagonal for its orifice ring around the periphery of the circular arc barrier layer of the hole of first hole array formation.
3. the electrostatic condenser based on nano-electrode according to claim 2 is characterized in that the first hole array is the hole array that six sides arrange in order.
4. the electrostatic condenser based on nano-electrode according to claim 1, the thickness that it is characterized in that conducting film is 100～200nm, it is golden film, or silverskin, or copper film, or the nickel film, or the tin film.
5. the preparation method of the described electrostatic condenser based on nano-electrode of a claim 1 comprises the two-step anodization method, it is characterized in that key step is as follows:
Step 1, earlier aluminium flake being placed concentration is that 0.2～0.4mol/L, temperature are the oxalic acid solution that 0～3 ℃ sulfuric acid solution or temperature are 5～15 ℃, anodic oxidation 1～2h under the direct voltage of 25～40V, obtain the once oxidation aluminum alloy pattern plate, the once oxidation aluminum alloy pattern plate being placed concentration is that sulfuric acid solution and the concentration of 0.7～0.9mol/L is the mixed solution of the aluminum sulfate solution of 0.05～0.15mol/L again, in 1.5～2.5min by 5mA/cm
2Rise to 160mA/cm
2The direct current constant current under behind anodic oxidation 2～4min, be placed on and remove the unoxidized aluminium in the back side in the butter of tin saturated solution, obtain it and simultaneously be equipped with the first hole array, back are equipped with the slot that parallels with the hole of the first hole array in the periphery of the circular arc barrier layer of the hole of first hole array formation secondary oxidation aluminum alloy pattern plate;
Step 2, earlier the back of secondary oxidation aluminum alloy pattern plate being placed concentration is that the hydrochloric acid solution of 18～20wt% and mixed solution that concentration is the copper chloride solution of 0.15～0.25mol/L corrode 30～40min, obtain it and simultaneously be equipped with the first hole array, the back side is equipped with the anodic oxidation aluminium formwork of the second hole array, re-use chemical vapour deposition technique, simultaneously be equipped with the first hole array in it, the back side is equipped with in the hole of the first hole array of anodic oxidation aluminium formwork of the second hole array and the second hole array behind the deposition of carbon nanotubes, two sides evaporation conducting film respectively at anodic oxidation aluminium formwork makes the electrostatic condenser based on nano-electrode.
6. the preparation method of the electrostatic condenser based on nano-electrode according to claim 5 is characterized in that before aluminium flake is carried out anodic oxidation, earlier it was dried up with nitrogen after acetone, ethanol and deionized water ultrasonic cleaning.
7. the preparation method of the electrostatic condenser based on nano-electrode according to claim 5, when it is characterized in that corroding secondary oxidation aluminum alloy pattern plate back, the temperature of the mixed solution of hydrochloric acid solution and copper chloride solution is 20～30 ℃.
8. the preparation method of the electrostatic condenser based on nano-electrode according to claim 5, it is characterized in that using chemical vapour deposition technique temperature during deposition of carbon nanotubes in the hole of the first hole array and the second hole array is 550～600 ℃, gas carrier is an argon gas, raw material is an acetylene gas, and the flow of argon gas and acetylene gas is respectively 100ml/min and 4ml/min.
9. the preparation method of the electrostatic condenser based on nano-electrode according to claim 5 is characterized in that evaporation is the thermal evaporation plating, or magnetron sputtering, or electron beam evaporation plating.
10. the preparation method of the electrostatic condenser based on nano-electrode according to claim 5 is characterized in that conducting film is golden film, or silverskin, or copper film, or the nickel film, or the tin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310153962.6A CN103219152B (en) | 2013-04-27 | 2013-04-27 | Based on the electrostatic condenser and preparation method thereof of nano-electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310153962.6A CN103219152B (en) | 2013-04-27 | 2013-04-27 | Based on the electrostatic condenser and preparation method thereof of nano-electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103219152A true CN103219152A (en) | 2013-07-24 |
| CN103219152B CN103219152B (en) | 2015-09-30 |
Family
ID=48816850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310153962.6A Active CN103219152B (en) | 2013-04-27 | 2013-04-27 | Based on the electrostatic condenser and preparation method thereof of nano-electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103219152B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104911667A (en) * | 2015-06-04 | 2015-09-16 | 中国科学院合肥物质科学研究院 | Preparation method of novel multilayer composite noble metal nanopore array SERS substrate with honeycomb-shaped array structure |
| CN105088310A (en) * | 2015-09-21 | 2015-11-25 | 天津工业大学 | Preparation method of conical anodized aluminum oxide template |
| CN110980692A (en) * | 2019-11-26 | 2020-04-10 | 中国科学院合肥物质科学研究院 | Conical carbon nanotube array and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080006815A (en) * | 2006-07-13 | 2008-01-17 | 충남대학교산학협력단 | Method for preparing triode type carbon nanotubes for field emission devices |
| CN101567263A (en) * | 2007-06-14 | 2009-10-28 | 太阳诱电株式会社 | Capacitor and method of manufacturing the same |
| US20100219079A1 (en) * | 2006-05-07 | 2010-09-02 | Synkera Technologies, Inc. | Methods for making membranes based on anodic aluminum oxide structures |
| CN102906835A (en) * | 2009-12-16 | 2013-01-30 | 艾普瑞特材料技术有限责任公司 | Capacitor with three-dimensional high surface area electrode and methods of manufacture |
-
2013
- 2013-04-27 CN CN201310153962.6A patent/CN103219152B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100219079A1 (en) * | 2006-05-07 | 2010-09-02 | Synkera Technologies, Inc. | Methods for making membranes based on anodic aluminum oxide structures |
| KR20080006815A (en) * | 2006-07-13 | 2008-01-17 | 충남대학교산학협력단 | Method for preparing triode type carbon nanotubes for field emission devices |
| CN101567263A (en) * | 2007-06-14 | 2009-10-28 | 太阳诱电株式会社 | Capacitor and method of manufacturing the same |
| CN102906835A (en) * | 2009-12-16 | 2013-01-30 | 艾普瑞特材料技术有限责任公司 | Capacitor with three-dimensional high surface area electrode and methods of manufacture |
Non-Patent Citations (1)
| Title |
|---|
| XIANGLONG ZHANG,GUOWEN MENG, ET AL,: "Color fine-tuning of CNTs@AAO composite thin films via isotropically etching porous AAO before CNT growth and color modification by water infusion", 《ADVANCED MATERIALS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104911667A (en) * | 2015-06-04 | 2015-09-16 | 中国科学院合肥物质科学研究院 | Preparation method of novel multilayer composite noble metal nanopore array SERS substrate with honeycomb-shaped array structure |
| CN104911667B (en) * | 2015-06-04 | 2018-06-08 | 中国科学院合肥物质科学研究院 | A kind of preparation method of the novel MULTILAYER COMPOSITE noble metal nano hole array SERS substrates with honeycomb array structure |
| CN105088310A (en) * | 2015-09-21 | 2015-11-25 | 天津工业大学 | Preparation method of conical anodized aluminum oxide template |
| CN110980692A (en) * | 2019-11-26 | 2020-04-10 | 中国科学院合肥物质科学研究院 | Conical carbon nanotube array and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103219152B (en) | 2015-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | Two‐dimensional transition metal carbides and nitrides (MXenes): synthesis, properties, and electrochemical energy storage applications | |
| He et al. | Carbon-coated NiMn layered double hydroxides/Ni3S2 nanocomposite for high performance supercapacitors | |
| Liu et al. | A new architecture design of Ni–Co LDH-based pseudocapacitors | |
| Choudhary et al. | Directly deposited MoS 2 thin film electrodes for high performance supercapacitors | |
| Yang et al. | Facile electrodeposition of 3D concentration-gradient Ni-Co hydroxide nanostructures on nickel foam as high performance electrodes for asymmetric supercapacitors | |
| Du et al. | Flexible supercapacitors based on carbon nanotube/MnO 2 nanotube hybrid porous films for wearable electronic devices | |
| Wen et al. | Self-supported binder-free carbon fibers/MnO2 electrodes derived from disposable bamboo chopsticks for high-performance supercapacitors | |
| Shang et al. | Coaxial Ni x Co2 x (OH) 6 x/TiN nanotube arrays as supercapacitor electrodes | |
| Wu et al. | Three-dimensional hierarchical interwoven nitrogen-doped carbon nanotubes/CoxNi1-x-layered double hydroxides ultrathin nanosheets for high-performance supercapacitors | |
| Cho et al. | Bendable RuO2/graphene thin film for fully flexible supercapacitor electrodes with superior stability | |
| Guo et al. | Nanoarrays: design, preparation and supercapacitor applications | |
| Huang et al. | Design and construction of few-layer graphene cathode for ultrafast and high-capacity aluminum-ion batteries | |
| Chen et al. | Facilitated charge transport in ternary interconnected electrodes for flexible supercapacitors with excellent power characteristics | |
| Zhang et al. | Preparation of cobalt hydroxide nanosheets on carbon nanotubes/carbon paper conductive substrate for supercapacitor application | |
| Yan et al. | Electrochemical reduction approach-based 3D graphene/Ni (OH) 2 electrode for high-performance supercapacitors | |
| Wu et al. | Multilayered architecture of graphene nanosheets and MnO2 nanowires as an electrode material for high-performance supercapacitors | |
| Cao et al. | CaTiO3 perovskite in the framework of activated carbon and its effect on enhanced electrochemical capacitance | |
| US9096938B2 (en) | Graphite oxide and/or graphene preparation method | |
| Liu et al. | Sodium metal-assisted carbonization of pyrrole to prepare N-doped porous carbons for high-rate performance supercapacitors | |
| Lee et al. | Simple and direct synthesis of ZnO decorated multi-walled carbon nanotube for supercapacitor electrodes | |
| WO2018120601A1 (en) | Preparation method for self-supporting thin film of graphene-enhanced three-dimensional porous carbon | |
| Lee et al. | Highly reversible crystal transformation of anodized porous V2O5 nanostructures for wide potential window high-performance supercapacitors | |
| Shahrokhian et al. | In–situ electrochemical exfoliation of Highly Oriented Pyrolytic Graphite as a new substrate for electrodeposition of flower like nickel hydroxide: application as a new high–performance supercapacitor | |
| Shrestha et al. | Electrophoretic deposition of activated carbon YP-50 with ethyl cellulose binders for supercapacitor electrodes | |
| CN103219152B (en) | Based on the electrostatic condenser and preparation method thereof of nano-electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |