CN103208735A - Heat sink with adjustable thermal expansion coefficients for large-power semiconductor laser array - Google Patents
Heat sink with adjustable thermal expansion coefficients for large-power semiconductor laser array Download PDFInfo
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- CN103208735A CN103208735A CN2012100075174A CN201210007517A CN103208735A CN 103208735 A CN103208735 A CN 103208735A CN 2012100075174 A CN2012100075174 A CN 2012100075174A CN 201210007517 A CN201210007517 A CN 201210007517A CN 103208735 A CN103208735 A CN 103208735A
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- aln
- power semiconductor
- heat sink
- thermal expansion
- expansion
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Abstract
The invention discloses a heat sink with adjustable thermal expansion coefficients for a large-power semiconductor laser array. The heat sink is manufactured by the following steps of mixing AlN and ZrW2O8 according to the mass ratio of 1:1-20:1, placing a mixture into a ball mill to be evenly mixed, maintaining the mixture pressure under the pressure of 50-100 MPa and the temperature of 1200-1700 degrees for 1-60 min, and compressing the mixture. The AlN and the ZrW2O8 are mixed according to certain proportion, due to the fact that the ZrW2O8 is a negative thermal expansion material, the thermal expansion coefficient of the AlN can be reduced when the AlN is combined with the ZrW2O8, the thermal expansion coefficient of the material prepared finally is close to that of gallium arsenide, and the material is suitable for the large-power semiconductor laser array. In addition, corresponding materials can be produced by adopting ball milling of the ball mill and a common hot pressing method, a manufacture process is easy, and the operability is strong.
Description
Technical field
The present invention relates to a kind of high power semiconductor lasers array, be specifically related to a kind of heat sink.
Background technology
The high power semiconductor lasers array is when work, and operating current is very big, and power is very high.At present the electro-optical efficiency of high power semiconductor lasers array is about 50%, and the heat of generation is a lot, and tube core and heat sink temperature are very high, and the coupling of tube core and heat sink material thermal coefficient of expansion is very crucial problem.If difference of thermal expansion coefficients is big between them, because the stress that thermal expansion produces may be broken tube core, perhaps make tube core produce the crack, have a strong impact on device lifetime.So heat sink material will have good thermal conductivity, the heat that produces when device is worked conducts from heat sink.And require the thermal coefficient of expansion of heat sink material and will approaching of GaAs (GaAs), to avoid stress damage as far as possible.The backing material of high power semiconductor lasers array is GaAs (GaAs), and its thermal coefficient of expansion is 6.0 * 10
-6/ k,
A1N pottery good heat conductivity is 270W/mK 25 ℃ of pyroconductivities.Coefficient of linear expansion and silicon approach, and are 4.03 * 10 in the time of coefficient of linear expansion 25-200 ℃
-6/ K.Little, nontoxic, the high temperature resistant and burn into good mechanical properties of low-k and dielectric loss, its combination property is better than aluminium oxide and beryllium oxide, is the ideal material of semiconductor chip and electron device package, and the application prospect in electronics industry is very wide.The backing material of high power semiconductor lasers array is GaAs (GaAs), and its thermal coefficient of expansion is 6.0 * 10
-6/ K, on data, their thermal coefficient of expansion also has gap.If can reduce the thermal coefficient of expansion of AlN, make it the thermal coefficient of expansion near GaAs, will be highly suitable for using as heat sink material.
Negative thermal expansion material (NTE) refers to that in certain temperature range its coefficient of linear expansion or the coefficient of volume expansion are negative value.Because thermal coefficient of expansion has additive property, make this material make controlled thermal with other materials and expand even Zero-expansion material, therefore.Negative thermal expansion material is with a wide range of applications in fields such as communication, electronics, precision optical machinery and fuel cells.Mean thermal expansion coefficients in negative expansion ZrW2O8 powder and ceramic room temperature to the 600 ℃ scope is-5.605 * 10
-6K
-1
Summary of the invention
The technical problem to be solved in the present invention is that the coefficient of expansion heat sink in the high power semiconductor lasers array is improper, provide a kind of thermal coefficient of expansion for the high power semiconductor lasers array can regulate heat sink, the matched coefficients of thermal expansion of its thermal coefficient of expansion and GaAs, and the stress of heat sink generation can reduce work the time is to the damage of tube core.
Technical scheme of the present invention realizes in the following manner: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8Be to put into ball mill after 1:1 ~ 20:1 mixes to mix according to mass ratio, with compound in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Described ball mill is horizontal planetary ball mill, AlN and ZrW
2O
8Ball milling 2 ~ 5h under the rotating speed of 500 ~ 650r/min.
Described AlN and ZrW
2O
8Mass ratio be 10:1.
The present invention is with AlN and ZrW
2O
8Combine according to a certain percentage, because ZrW
2O
8Be negative thermal expansion material, when when AlN is combined, can reduce the thermal coefficient of expansion of AlN, the material coefficient of thermal expansion coefficient that finally prepares is suitable for large power semiconductor laser array near GaAs.In addition, the present invention only need adopt the ball mill ball milling and adopt the ordinary hot platen press can produce respective material, and its preparation technology is simple, strong operability.
Embodiment
Embodiment 1: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 1:1 mixes, under the rotating speed of 500 ~ 650r/min ball milling 2 ~ 5h, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.In the process of pressurization, material can be pressed into the shape that needs.
Using AlN among the present invention is high-purity powder, and its purity is 99%, ZrW
2O
8Also be high-purity powder, its purity is 99%.
The present invention is with AlN and ZrW
2O
8Be mixed with in proportion, the thermal coefficient of expansion of AlN reduced, with the matched coefficients of thermal expansion of GaAs, reduced the high power semiconductor lasers array when work stress to the damage of tube core.
Embodiment 2: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 4:1 mixes, under the rotating speed of 500 ~ 650r/min ball milling 2 ~ 5h, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Embodiment 3: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 8:1 mixes, under the rotating speed of 500 ~ 650r/min ball milling 2 ~ 5h, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Embodiment 4: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 10:1 mixes, ball milling 2 ~ 5h under the rotating speed of 500 ~ 650r/min, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Embodiment 5: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 12:1 mixes, ball milling 2 ~ 5h under the rotating speed of 500 ~ 650r/min, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Embodiment 6: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 16:1 mixes, ball milling 2 ~ 5h under the rotating speed of 500 ~ 650r/min, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Embodiment 7: a kind of thermal coefficient of expansion for the high power semiconductor lasers array can be regulated heat sink, and its step is as follows: with AlN and ZrW
2O
8According to mass ratio be put into horizontal planetary ball mill after 20:1 mixes, ball milling 2 ~ 5h under the rotating speed of 500 ~ 650r/min, raw material are mixed, uniform compound is taken out, afterwards in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
Claims (3)
1. a thermal coefficient of expansion that is used for the high power semiconductor lasers array can be regulated heat sinkly, it is characterized in that its step is as follows: with AlN and ZrW
2O
8Be to put into ball mill after 1:1 ~ 20:1 mixes to mix according to mass ratio, with compound in 50 ~ 100MPa, 1200 ~ 1700 ℃ of pressurize 1 ~ 60min compression moulding.
2. the thermal coefficient of expansion for the high power semiconductor lasers array according to claim 1 can be regulated heat sinkly, and it is characterized in that: described ball mill is horizontal planetary ball mill, AlN and ZrW
2O
8Ball milling 2 ~ 5h under the rotating speed of 500 ~ 650r/min.
3. the thermal coefficient of expansion for the high power semiconductor lasers array according to claim 1 can be regulated heat sinkly, it is characterized in that: described AlN and ZrW
2O
8Mass ratio be 10:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100075174A CN103208735A (en) | 2012-01-12 | 2012-01-12 | Heat sink with adjustable thermal expansion coefficients for large-power semiconductor laser array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100075174A CN103208735A (en) | 2012-01-12 | 2012-01-12 | Heat sink with adjustable thermal expansion coefficients for large-power semiconductor laser array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103208735A true CN103208735A (en) | 2013-07-17 |
Family
ID=48755870
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100075174A Pending CN103208735A (en) | 2012-01-12 | 2012-01-12 | Heat sink with adjustable thermal expansion coefficients for large-power semiconductor laser array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116693293A (en) * | 2023-04-01 | 2023-09-05 | 西北农林科技大学 | ZrW preparation by oxidation exothermic and solid phase reaction diffusion method 2 O 8 Method for coating ZrC composite powder |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352317A (en) * | 2000-11-06 | 2002-06-05 | 中国科学院金属研究所 | Method for preparing titanium aluminium carbon block material by in-situ hot pressing/solid-liquid phase reaction |
| CN1785895A (en) * | 2005-10-31 | 2006-06-14 | 中国航空工业第一集团公司北京航空材料研究院 | Method of preparing iolite honeycomb ceramic having relatively low thermel expansion coefficient |
| CN1935739A (en) * | 2006-09-28 | 2007-03-28 | 桂林电子科技大学 | Low-sintered glass ceramic composite material and its preparing method |
| WO2011073483A1 (en) * | 2009-12-16 | 2011-06-23 | Consejo Superior De Investigaciones Científicas (Csic) (50%) | Composite material of electroconductor having controlled coefficient of thermal expansion |
-
2012
- 2012-01-12 CN CN2012100075174A patent/CN103208735A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352317A (en) * | 2000-11-06 | 2002-06-05 | 中国科学院金属研究所 | Method for preparing titanium aluminium carbon block material by in-situ hot pressing/solid-liquid phase reaction |
| CN1785895A (en) * | 2005-10-31 | 2006-06-14 | 中国航空工业第一集团公司北京航空材料研究院 | Method of preparing iolite honeycomb ceramic having relatively low thermel expansion coefficient |
| CN1935739A (en) * | 2006-09-28 | 2007-03-28 | 桂林电子科技大学 | Low-sintered glass ceramic composite material and its preparing method |
| WO2011073483A1 (en) * | 2009-12-16 | 2011-06-23 | Consejo Superior De Investigaciones Científicas (Csic) (50%) | Composite material of electroconductor having controlled coefficient of thermal expansion |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116693293A (en) * | 2023-04-01 | 2023-09-05 | 西北农林科技大学 | ZrW preparation by oxidation exothermic and solid phase reaction diffusion method 2 O 8 Method for coating ZrC composite powder |
| CN116693293B (en) * | 2023-04-01 | 2024-05-28 | 西北农林科技大学 | ZrW preparation by oxidation exothermic and solid phase reaction diffusion method2O8Method for coating ZrC composite powder |
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Application publication date: 20130717 |